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SERS Plasmonic Enhancement using DNA Origami-based Complex Metallic Nanostructures
Authors:
M. Pilo-Pais,
A. Watson,
S. Demers,
T. H. LaBean,
G. Finkelstein
Abstract:
DNA origami is a novel self-assembly technique allowing one to form various 2D shapes and position matter with nanometer accuracy. It has been used to coordinate placement of nanoscale objects, both organic and inorganic; to make molecular motors and walkers; and to create optically active nanostructures. Here we use DNA origami templates to engineer Surfaced Enhanced Raman Scattering (SERS) subst…
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DNA origami is a novel self-assembly technique allowing one to form various 2D shapes and position matter with nanometer accuracy. It has been used to coordinate placement of nanoscale objects, both organic and inorganic; to make molecular motors and walkers; and to create optically active nanostructures. Here we use DNA origami templates to engineer Surfaced Enhanced Raman Scattering (SERS) substrates. Specifically, gold nanoparticles were selectively attached to the corners of rectangular origami and subsequently enlarged via solution-based metal deposition. The resulting assemblies were designed to form "hot spots" of enhanced electromagnetic field between the nanoparticles. We observed a significant enhancement of the Raman signal from molecules covalently attached to the assemblies, as compared to control nanoparticle samples which lack inter-particle hot spots. Our method opens up the prospects of using DNA origami to rationally engineer and assemble plasmonic structures for molecular spectroscopy.
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Submitted 24 January, 2014; v1 submitted 16 October, 2013;
originally announced October 2013.
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Ab initio calculation of anisotropic interfacial excess free energies
Authors:
Axel van de Walle,
Chirranjeevi Balaji Gopal,
Steve Demers,
Qijun Hong,
Adam Kowalski,
Ljubomir Miljacic,
Gregory Pomrehn,
Pratyush Tiwary
Abstract:
We describe a simple method to determine, from ab initio calculations, the complete orientation-dependence of interfacial free energies in solid-state crystalline systems. We illustrate the method with an application to precipitates in the Al-Ti alloy system. The method combines the cluster expansion formalism in its most general form (to model the system's energetics) with the inversion of the we…
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We describe a simple method to determine, from ab initio calculations, the complete orientation-dependence of interfacial free energies in solid-state crystalline systems. We illustrate the method with an application to precipitates in the Al-Ti alloy system. The method combines the cluster expansion formalism in its most general form (to model the system's energetics) with the inversion of the well-known Wulff construction (to recover interfacial energies from equilibrium precipitate shapes). Although the inverse Wulff construction only provides the relative magnitude of the various interfacial free energies, absolute free energies can be recovered from a calculation of a single, conveniently chosen, planar interface. The method is able to account for essentially all sources of entropy (arising from phonons, bulk point defects, as well as interface roughness) and is thus able to transparently handle both atomically smooth and rough interfaces. The approach expresses the resulting orientation-dependence of the interfacial properties using symmetry-adapted bases for general orientation-dependent quantities. As a by-product, this paper thus provides a simple and general method to generate such basis functions, which prove useful in a variety of other applications, for instance to represent the anisotropy of the so-called constituent strain elastic energy.
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Submitted 22 April, 2014; v1 submitted 1 January, 2013;
originally announced January 2013.
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Intrinsic Defects and Dopability of Zinc Phosphide
Authors:
Steven Demers,
Axel van de Walle
Abstract:
Zinc Phosphide ($Zn_3P_2$) could be the basis for cheap and highly efficient solar cells. Its use in this regard is limited by the difficulty in n-type doping the material. In an effort to understand the mechanism behind this, the energetics and electronic structure of intrinsic point defects in zinc phosphide are studied using generalized Kohn-Sham theory and utilizing the Heyd, Scuseria, and Ern…
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Zinc Phosphide ($Zn_3P_2$) could be the basis for cheap and highly efficient solar cells. Its use in this regard is limited by the difficulty in n-type doping the material. In an effort to understand the mechanism behind this, the energetics and electronic structure of intrinsic point defects in zinc phosphide are studied using generalized Kohn-Sham theory and utilizing the Heyd, Scuseria, and Ernzerhof (HSE) hybrid functional for exchange and correlation. Novel 'perturbation extrapolation' is utilized to extend the use of the computationally expensive HSE functional to this large-scale defect system. According to calculations, the formation energy of charged phosphorus interstitial defects are very low in n-type $Zn_3P_2$ and act as 'electron sinks', nullifying the desired doping and lowering the fermi-level back towards the p-type regime. This is consistent with experimental observations of both the tendency of conductivity to rise with phosphorus partial pressure, and with current partial successes in n-type doping in very zinc-rich growth conditions.
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Submitted 2 March, 2012;
originally announced March 2012.
