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Rb2Ti2O5 : a layered ionic conductor at the sub-micrometer scale
Authors:
Valerio Digiorgio,
Karen Sobnath,
Maria Luisa Della Rocca,
Clément Barraud,
Rémi Federicci,
Armel Descamps-Mandine,
Brigitte Leridon
Abstract:
Over the past few years, ionic conductors have gained a lot of attention given the possibility to implement them in various applications such as supercapacitors, batteries or fuel cells as well as for resistive memories. Especially, layered two-dimensional (2D) crystals such as h-BN, graphene oxide and MoSe2 have shown to provide unique properties originating from the specific 2D confinement of mo…
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Over the past few years, ionic conductors have gained a lot of attention given the possibility to implement them in various applications such as supercapacitors, batteries or fuel cells as well as for resistive memories. Especially, layered two-dimensional (2D) crystals such as h-BN, graphene oxide and MoSe2 have shown to provide unique properties originating from the specific 2D confinement of moving ions. Two important parameters are the ion conductivity and the chemical stability over a wide range of operating conditions. In this vein, Rb2Ti2O5 has been recently found displaying remarkable properties such as superionic conduction and colossal equivalent dielectric constant. Here, a first approach to the study of the electrical properties of layered Rb2Ti2O5 at the 100-nanometer scale is presented. Characterizations by means of micro-Raman spectroscopy and atomic force microscope (AFM) measurements of mechanically exfoliated RTO nanocrystals via the so-called adhesive-tape technique are reported. Finally, the results of electrical measurements performed on an exfoliated RTO nanocrystals are presented, and are found to be consistent with the results obtained on macroscopic crystals. 4
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Submitted 22 July, 2024;
originally announced July 2024.
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Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In$_{2}$Se$_{3}$
Authors:
Geoffroy Kremer,
Aymen Mahmoudi,
Adel M'Foukh,
Meryem Bouaziz,
Mehrdad Rahimi,
Maria Luisa Della Rocca,
Patrick Le Fèvre,
Jean-Francois Dayen,
François Bertran,
Sylvia Matzen,
Marco Pala,
Julien Chaste,
Fabrice Oehler,
Abdelkarim Ouerghi
Abstract:
Two-dimensional (2D) ferroelectric (FE) materials are promising compounds for next-generation nonvolatile memories, due to their low energy consumption and high endurance. Among them, α-In$_{2}$Se$_{3}$ has drawn particular attention due to its in- and out-of-plane ferroelectricity, whose robustness has been demonstrated down to the monolayer limit. This is a relatively uncommon behavior since mos…
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Two-dimensional (2D) ferroelectric (FE) materials are promising compounds for next-generation nonvolatile memories, due to their low energy consumption and high endurance. Among them, α-In$_{2}$Se$_{3}$ has drawn particular attention due to its in- and out-of-plane ferroelectricity, whose robustness has been demonstrated down to the monolayer limit. This is a relatively uncommon behavior since most bulk FE materials lose their ferroelectric character at the 2D limit due to depolarization field. Using angle resolved photoemission spectroscopy (ARPES), we unveil another unusual 2D phenomena appearing in 2H α-In$_{2}$Se$_{3}$ single crystals, the occurrence of a highly metallic two-dimensional electron gas (2DEG) at the surface of vacuum-cleaved crystals. This 2DEG exhibits two confined states which correspond to an electron density of approximatively 10$^{13}$ electrons/cm$^{3}$, also confirmed by thermoelectric measurements. Combination of ARPES and density functional theory (DFT) calculations reveals a direct band gap of energy equal to 1.3 +/- 0.1 eV, with the bottom of the conduction band localized at the center of the Brillouin zone, just below the Fermi level. Such strong n-type doping further supports the quantum confinement of electrons and the formation of the 2DEG.
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Submitted 9 August, 2023;
originally announced August 2023.
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Conductance fluctuations in metallic nanogaps made by electromigration
Authors:
P. Petit,
A. Anthore,
M. L. Della Rocca,
P. Lafarge
Abstract:
We report on low temperature conductance measurements of gold nanogaps fabricated by controlled electromigration. Fluctuations of the conductance due to quantum interferences and depending both on bias voltage and magnetic field are observed. By analyzing the voltage and magnetoconductance correlation functions we determine the type of electron trajectories generating the observed quantum interfer…
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We report on low temperature conductance measurements of gold nanogaps fabricated by controlled electromigration. Fluctuations of the conductance due to quantum interferences and depending both on bias voltage and magnetic field are observed. By analyzing the voltage and magnetoconductance correlation functions we determine the type of electron trajectories generating the observed quantum interferences and the effective characteristic time of phase coherence in our device.
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Submitted 23 November, 2010;
originally announced November 2010.
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Measurement of the current-phase relation of superconducting atomic contacts
Authors:
M. L. Della Rocca,
M. Chauvin,
B. Huard,
H. Pothier,
D. Esteve,
C. Urbina
Abstract:
We have probed the current-phase relation of an atomic contact placed with a tunnel junction in a small superconducting loop. The measurements are in quantitative agreement with the predictions of a resistively shunted SQUID model in which the Josephson coupling of the contact is calculated using the independently determined transmissions of its conduction channels.
We have probed the current-phase relation of an atomic contact placed with a tunnel junction in a small superconducting loop. The measurements are in quantitative agreement with the predictions of a resistively shunted SQUID model in which the Josephson coupling of the contact is calculated using the independently determined transmissions of its conduction channels.
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Submitted 6 August, 2007; v1 submitted 3 August, 2007;
originally announced August 2007.
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Ferromagnetic 0-pi Junctions as Classical Spins
Authors:
M. L. Della Rocca,
M. Aprili,
T. Kontos,
A. Gomez,
P. Spatkis
Abstract:
The ground state of highly damped PdNi based 0-pi ferromagnetic Josephson junctions shows a spontaneous half quantum vortex, sustained by a supercurrent of undetermined sign. This supercurrent flows in the electrode of a Josephson junction used as a detector and produces a phi(0)/4 shift in its magnetic diffraction pattern. We have measured the statistics of the positive or negative sign shift o…
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The ground state of highly damped PdNi based 0-pi ferromagnetic Josephson junctions shows a spontaneous half quantum vortex, sustained by a supercurrent of undetermined sign. This supercurrent flows in the electrode of a Josephson junction used as a detector and produces a phi(0)/4 shift in its magnetic diffraction pattern. We have measured the statistics of the positive or negative sign shift occurring at the superconducting transition of such a junction. The randomness of the shift sign, the reproducibility of its magnitude and the possibility of achieving exact flux compensation upon field cooling: all these features show that 0-pi junctions behave as classical spins, just as magnetic nanoparticles with uniaxial anisotropy.
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Submitted 19 January, 2005;
originally announced January 2005.
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Spontaneous supercurrent induced by ferromagnetic pi-junctions
Authors:
A. Bauer,
J. Bentner,
M. Aprili,
M. L. Della Rocca,
M. Reinwald,
W. Wegscheider,
C. Strunk
Abstract:
We present magnetization measurements of mesoscopic superconducting niobium loops containing a ferromagnetic (PdNi) pi-junction. The loops are prepared on top of the active area of a micro Hall-sensor based on high mobility GaAs/AlGaAs heterostructures. We observe asymmetric switching of the loop between different magnetization states when reversing the sweep direction of the magnetic field. Thi…
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We present magnetization measurements of mesoscopic superconducting niobium loops containing a ferromagnetic (PdNi) pi-junction. The loops are prepared on top of the active area of a micro Hall-sensor based on high mobility GaAs/AlGaAs heterostructures. We observe asymmetric switching of the loop between different magnetization states when reversing the sweep direction of the magnetic field. This provides evidence for a spontaneous current induced by the intrinsic phase shift of the pi-junction. In addition, the presence of the spontaneous current near zero applied field is directly revealed by an increase of the magnetic moment with decreasing temperature, which results in half integer flux quantization in the loop at low temperatures.
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Submitted 5 December, 2003;
originally announced December 2003.
