Impact of electron beam propagation on high-resolution quantitative chemical analysis of 1 nm-thick GaN/AlGaN quantum wells
Authors:
Florian Castioni,
Patrick Quéméré,
Sergi Cuesta,
Vincent Delaye,
Pascale Bayle-Guillemaud,
Eva Monroy,
Eric Robin,
Nicolas Bernier
Abstract:
Recent advancements in high-resolution spectroscopy analyses within the scanning transmission electron microscope (STEM) have paved the way for measuring the concentration of chemical species in crystalline materials at the atomic scale. However, several artifacts complicate the direct interpretation of experimental data. For instance, in the case of energy dispersive x-ray (EDX) spectroscopy, the…
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Recent advancements in high-resolution spectroscopy analyses within the scanning transmission electron microscope (STEM) have paved the way for measuring the concentration of chemical species in crystalline materials at the atomic scale. However, several artifacts complicate the direct interpretation of experimental data. For instance, in the case of energy dispersive x-ray (EDX) spectroscopy, the linear dependency of local x-ray emission on composition is disrupted by channeling effects and cross-talk during electron beam propagation. To address these challenges, it becomes necessary to adopt an approach that combines experimental data with inelastic scattering simulations. This method aims to account for the effects of electron beam propagation on x-ray emission, essentially determining the quantity and the spatial origin of the collected signal. In this publication, we propose to assess the precision and sensitivity limits of this approach in a practical case study involving a focused ion beam (FIB)-prepared III-N multilayers device. The device features nominally pure ~1.5-nm thick GaN quantum wells surrounded by AlGaN barriers containing a low concentration of aluminum (~5 at. %). By employing atomic-scale EDX acquisitions based on the averaging of more than several thousand frames, calibrated $ζ$-factors combined with a multi-layer x-ray absorption correction model for quantification, and by comparing the x-ray radiation obtained from the quantum well with a reference 10-nm thick structure, we demonstrate that the quantitative impact of beam propagation on chemical composition can be precisely accounted for, resulting in a composition sensitivity at the atomic scale as low as +-0.25 at.%. Finally, practical aspects to achieve this high precision level are discussed, particularly in terms of inelastic multislice simulation, uncertainty determination, and sample quality.
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Submitted 10 January, 2025;
originally announced January 2025.
Al$_{5+α}$Si$_{5+δ}$N$_{12}$, a new Nitride compound
Authors:
R. Dagher,
L. Lymperakis,
V. Delaye,
L. Largeau,
A. Michon,
J Brault,
P. Vennegues
Abstract:
We report on the synthesis of new nitride-based compound by using annealing of AlN heteroepitaxial layers under a Si-atmosphere at temperatures between 1350$^\circ$C and 1550$^\circ$C. The structure and stoichiometry of this compound are investigated by high-resolution scanning transmission electron microscopy (HRSTEM), energy dispersive X-Ray (EDX) spectroscopy, and density functional theory (DFT…
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We report on the synthesis of new nitride-based compound by using annealing of AlN heteroepitaxial layers under a Si-atmosphere at temperatures between 1350$^\circ$C and 1550$^\circ$C. The structure and stoichiometry of this compound are investigated by high-resolution scanning transmission electron microscopy (HRSTEM), energy dispersive X-Ray (EDX) spectroscopy, and density functional theory (DFT) calculations. The identified structure is a derivative of the parent wurtzite AlN crystal where anion sublattice is fully occupied by N atoms and the cation sublattice is the stacking of 2 different planes along <0001>. The first one exhibits a $\times$3 periodicity along <10-10> with 1/3 of the sites being vacant. The rest of the sites in the cation sublattice are occupied by equal number of Si and Al atoms. Assuming a semiconducting alloy, which is expected to have a wide band gap, a range of stoichiometries is proposed, Al$_{5+α}$Si$_{5+δ}$N$_{12}$, with $α$ being between 0 and 1/3 and $δ$ between 0 and 1/4.
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Submitted 22 March, 2019;
originally announced March 2019.
