A Photonic Atom Probe coupling 3D Atomic Scale Analysis with in situ Photoluminescence Spectroscopy
Authors:
Jonathan Houard,
Antoine Normand,
Enrico Di Russo,
Christian Bacchi,
Pradip Dalapati,
Georges Beainy,
Simona Moldovan,
Gerald Da Costa,
Fabien Delaroche,
Charly Vaudolon,
Jean Michel Chauveau,
Maxime Hugues,
Didier Blavette,
Bernard Deconihout,
Angela Vella,
François Vurpillot,
Lorenzo Rigutti
Abstract:
Laser enhanced field evaporation of surface atoms in Laser-assisted Atom Probe Tomography (La-APT) can simultaneously excite phtotoluminescence in semiconductor or insulating specimens. An atom probe equipped with appropriate focalization and collection optics has been coupled with an in-situ micro-Photoluminescence (μPL) bench that can be operated during APT analysis. The Photonic Atom Probe inst…
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Laser enhanced field evaporation of surface atoms in Laser-assisted Atom Probe Tomography (La-APT) can simultaneously excite phtotoluminescence in semiconductor or insulating specimens. An atom probe equipped with appropriate focalization and collection optics has been coupled with an in-situ micro-Photoluminescence (μPL) bench that can be operated during APT analysis. The Photonic Atom Probe instrument we have developped operates at frequencies up to 500 kHz and is controlled by 150 fs laser pulses tunable in energy in a large spectral range (spanning from deep UV to near IR). Micro-PL spectroscopy is performed using a 320 mm focal length spectrometer equipped with a CCD camera for time-integrated and with a streak camera for time-resolved acquisitions. An exemple of application of this instrument on a multi-quantum well oxide heterostructure sample illustrates the potential of this new generation of tomographic atom probe.
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Submitted 23 July, 2020;
originally announced July 2020.
A model to predict image formation in the three-dimensional field ion microscope
Authors:
Benjamin Klaes,
Rodrigue Larde,
Fabien Delaroche,
Stefan Parviainen,
Nicolas Rolland,
Shyam Katnagallu,
Baptiste Gault,
François Vurpillot
Abstract:
This article presents a numerical model dedicated to the simulation of field ion microscopy (FIM). FIM was the first technique to image individual atoms on the surface of a material. By a careful control of the field evaporation of the atoms from the surface, the bulk of the material exposed, and, through a digitally processing a sequence of micrographs, a three-dimensional reconstruction can be a…
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This article presents a numerical model dedicated to the simulation of field ion microscopy (FIM). FIM was the first technique to image individual atoms on the surface of a material. By a careful control of the field evaporation of the atoms from the surface, the bulk of the material exposed, and, through a digitally processing a sequence of micrographs, a three-dimensional reconstruction can be achieved. 3DFIM is particularly suited to the direct observation of crystalline defects such as vacancies, interstitials, vacancy clusters, dislocations, and any combinations of theses defects that underpin the physical properties of materials. This makes 3DFIM extremely valuable for many material science and engineering applications, and further developing this technique is becoming crucial. The proposed model enables the simulation of imaging artefacts that are induced by non-regular field evaporation and by the impact of the perturbation of the electric field distribution of the distorted distribution of atoms close to defects. The model combines the meshless algorithm for field evaporation proposed by Rolland et al. (Robin-Rolland Model, or RRM) with fundamental aspects of the field ionization process of the gas image involved in FIM.
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Submitted 19 November, 2019;
originally announced November 2019.
