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Optical spectroscopy of single quantum dots at tunable positive, neutral and negative charge states
Authors:
D. V. Regelman,
E. Dekel,
D. Gershoni,
E. Ehrenfreund,
A. J. Williamson,
J. Shumway,
A. Zunger,
W. V. Schoenfeld,
P. M. Petroff
Abstract:
We report on the observation of photoluminescence from positive, neutral and negative charge states of single semiconductor quantum dots. For this purpose we designed a structure enabling optical injection of a controlled unequal number of negative electrons and positive holes into an isolated InGaAs quantum dot embedded in a GaAs matrix. Thereby, we optically produced the charge states -3, -2,…
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We report on the observation of photoluminescence from positive, neutral and negative charge states of single semiconductor quantum dots. For this purpose we designed a structure enabling optical injection of a controlled unequal number of negative electrons and positive holes into an isolated InGaAs quantum dot embedded in a GaAs matrix. Thereby, we optically produced the charge states -3, -2, -1, 0, +1 and +2. The injected carriers form confined collective 'artificial atoms and molecules' states in the quantum dot. We resolve spectrally and temporally the photoluminescence from an optically excited quantum dot and use it to identify collective states, which contain charge of one type, coupled to few charges of the other type. These states can be viewed as the artificial analog of charged atoms such as H$^{-}$, H$^{-2}$, H$^{-3}$, and charged molecules such as H$_{2}^{+}$ and H$_{3}^{+2}$. Unlike higher dimensionality systems, where negative or positive charging always results in reduction of the emission energy due to electron-hole pair recombination, in our dots, negative charging reduces the emission energy, relative to the charge-neutral case, while positive charging increases it. Pseudopotential model calculations reveal that the enhanced spatial localization of the hole-wavefunction, relative to that of the electron in these dots, is the reason for this effect.
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Submitted 1 June, 2001; v1 submitted 30 May, 2001;
originally announced May 2001.
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Spectroscopy of a single semiconductor quantum dot at negative and positive discrete charge states
Authors:
D. V. Regelman,
E. Dekel,
D. Gershoni,
E. Ehrenfreund,
W. V. Schoenfeld,
P. M. Petroff
Abstract:
We study optically single self-assembled quantum dots embedded within the wide quantum well of a mixed type quantum structure. We compare the steady state and pulsed photoluminescence spectra of these dots to those of previously studied "regular" dots. We unambiguously identify experimentally emission from various discrete charge state of the dots. We provide means for optically tune the charge…
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We study optically single self-assembled quantum dots embedded within the wide quantum well of a mixed type quantum structure. We compare the steady state and pulsed photoluminescence spectra of these dots to those of previously studied "regular" dots. We unambiguously identify experimentally emission from various discrete charge state of the dots. We provide means for optically tune the charge state of the dot, both negatively and positively. Our observations are used to accurately determine the asymmetry between the quantum dots' confined electron and hole envelope wavefunctions.
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Submitted 9 April, 2001;
originally announced April 2001.
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Radiative Lifetimes of Single Excitons in Semiconductor Quantum Dots- Manifestation of the Spatial Coherence Effect
Authors:
E. Dekel,
D. V. Regelman,
D. Gershoni,
E. Ehrenfreund,
W. V. Schoenfeld,
P. M. Petroff
Abstract:
Using time correlated single photon counting combined with temperature dependent diffraction limited confocal photoluminescence spectroscopy we accurately determine, for the first time, the intrinsic radiative lifetime of single excitons confined within semiconductor quantum dots. Their lifetime is one (two) orders of magnitude longer than the intrinsic radiative lifetime of single excitons conf…
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Using time correlated single photon counting combined with temperature dependent diffraction limited confocal photoluminescence spectroscopy we accurately determine, for the first time, the intrinsic radiative lifetime of single excitons confined within semiconductor quantum dots. Their lifetime is one (two) orders of magnitude longer than the intrinsic radiative lifetime of single excitons confined in semiconductor quantum wires (wells) of comparable confining dimensions. We quantitatively explain this long radiative time in terms of the reduced spatial coherence between the confined exciton dipole moment and the radiation electromagnetic field.
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Submitted 9 November, 2000;
originally announced November 2000.
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Carrier-Carrier Correlations in an Optically Excited Single Semiconductor Quantum Dot
Authors:
E. Dekel,
D. Gershoni,
E. Ehrenfreund,
J. M. Garcia,
P. M. Petroff
Abstract:
We applied low temperature diffraction limited confocal optical microscopy to spatially resolve, and spectroscopically study photoluminescence from single self-assembled semiconductor quantum dots. Using selective wavelength imaging we unambiguously demonstrated that a single photoexcited quantum dot emits light in a few very narrow spectral lines. The measured spectrum and its dependence on the…
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We applied low temperature diffraction limited confocal optical microscopy to spatially resolve, and spectroscopically study photoluminescence from single self-assembled semiconductor quantum dots. Using selective wavelength imaging we unambiguously demonstrated that a single photoexcited quantum dot emits light in a few very narrow spectral lines. The measured spectrum and its dependence on the power of either cw or pulsed excitation are explained by taking carrier correlations into account. We solve numerically a many body Hamiltonian for a model quantum dot, and we show that the multi line emission spectrum is due to optical transitions between confined exciton multiplexes. We furthermore show that the electron-electron and hole-hole exchange interaction is responsible for the typical appearance of pairs in the photoluminescence spectra and for the appearance of red shifted new lines as the excitation power increases. The fact that only a few spectral lines appear in the emission spectrum strongly indicates fast thermalization. This means that a multiexciton relaxes to its ground state much faster than its radiative lifetime.
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Submitted 27 April, 1999; v1 submitted 22 April, 1999;
originally announced April 1999.
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Multi-Exciton Spectroscopy of a Single Self Assembled Quantum Dot
Authors:
E. Dekel,
D. Gershoni,
E. Ehrenfreund,
D. Spektor J. M. Garcia,
P. M. Petroff
Abstract:
We apply low temperature confocal optical microscopy to spatially resolve, and spectroscopically study a single self assembled quantum dot. By comparing the emission spectra obtained at various excitation levels to a theoretical many body model, we show that: Single exciton radiative recombination is very weak. Sharp spectral lines are due to optical transitions between confined multiexcitonic s…
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We apply low temperature confocal optical microscopy to spatially resolve, and spectroscopically study a single self assembled quantum dot. By comparing the emission spectra obtained at various excitation levels to a theoretical many body model, we show that: Single exciton radiative recombination is very weak. Sharp spectral lines are due to optical transitions between confined multiexcitonic states among which excitons thermalize within their lifetime. Once these few states are fully occupied, broad bands appear due to transitions between states which contain continuum electrons.
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Submitted 23 March, 1998;
originally announced March 1998.
