Showing 1–14 of 14 results for author: Degiovanni, I P

Magnesium-vacancy optical centers in diamond

Authors: Emilio Corte, Greta Andrini, Elena Nieto Hernández, Vanna Pugliese, Ângelo Costa, Goele Magchiels, Janni Moens, Shandirai Malven Tunhuma, Renan Villarreal, Lino M. C. Pereira, André Vantomme, João Guilherme Correia, Ettore Bernardi, Paolo Traina, Ivo Pietro Degiovanni, Ekaterina Moreva, Marco Genovese, Sviatoslav Ditalia Tchernij, Paolo Olivero, Ulrich Wahl, Jacopo Forneris

Abstract: We provide the first systematic characterization of the structural and photoluminescence properties of optically active defect centers fabricated upon implantation of 30-100 keV Mg+ ions in artificial diamond. The structural configurations of Mg-related defects were studied by the emission channeling technique for 27Mg implantations performed both at room-temperature and 800 °C, which allowed the… ▽ More We provide the first systematic characterization of the structural and photoluminescence properties of optically active defect centers fabricated upon implantation of 30-100 keV Mg+ ions in artificial diamond. The structural configurations of Mg-related defects were studied by the emission channeling technique for 27Mg implantations performed both at room-temperature and 800 °C, which allowed the identification of a major fraction of Mg atoms (~30-42%) in sites which are compatible with the split-vacancy structure of the MgV complex. A smaller fraction of Mg atoms (~13-17%) was found on substitutional sites. The photoluminescence emission was investigated both at the ensemble and individual defect level in a temperature range comprised between 5 K and 300 K, offering a detailed picture of the MgV-related emission properties and revealing the occurrence of previously unreported spectral features. The optical excitability of the MgV center was also studied as a function of the optical excitation wavelength enabling to identify the optimal conditions for photostable and intense emission. The results are discussed in the context of the preliminary experimental data and the theoretical models available in the literature, with appealing perspectives for the utilization of the tunable properties of the MgV center for quantum information processing applications. △ Less

Submitted 17 June, 2022; originally announced June 2022.

Comments: 7 figures

Spectral emission dependence of tin-vacancy centers in diamond from thermal processing and chemical functionalization

Authors: Emilio Corte, Selene Sachero, Sviatoslav Ditalia Tchernij, Tobias Lühmann, Sébastien Pezzagna, Paolo Traina, Ivo Pietro Degiovanni, Ekaterina Moreva, Paolo Olivero, Jan Meijer, Marco Genovese, Jacopo Forneris

Abstract: We report a systematic photoluminescence (PL) investigation of the spectral emission properties of individual optical defects fabricated in diamond upon ion implantation and annealing. Three spectral lines at 620 nm, 631 nm, and 647 nm are identified and attributed to the SnV center due to their occurrence in the PL spectra of the very same single-photon emitting defects. We show that the relative… ▽ More We report a systematic photoluminescence (PL) investigation of the spectral emission properties of individual optical defects fabricated in diamond upon ion implantation and annealing. Three spectral lines at 620 nm, 631 nm, and 647 nm are identified and attributed to the SnV center due to their occurrence in the PL spectra of the very same single-photon emitting defects. We show that the relative occurrence of the three spectral features can be modified by oxidizing the sample surface following thermal annealing. We finally report the relevant emission properties of each class of individual emitters, including the excited state emission lifetime and the emission intensity saturation parameters. △ Less

Submitted 14 June, 2021; originally announced June 2021.

Comments: 12 pages, 6 figures, 1 table

Spectral features of Pb-related color centers in diamond

Authors: Sviatoslav Ditalia Tchernij, Emilio Corte, Tobias Lühmann, Paolo Traina, Sébastien Pezzagna, Ivo Pietro Degiovanni, Georgios Provatas, Ekaterina Moreva, Jan Meijer, Paolo Olivero, Marco Genovese, Jacopo Forneris

Abstract: We report on the systematic characterization of the optical properties of diamond color centers based on Pb impurities. An ensemble photoluminescence analysis of their spectral emission was performed at different excitation wavelengths in the 405-520 nm range and at different temperatures in the 4-300 K range. The series of observed spectral features consist of different emission lines associated… ▽ More We report on the systematic characterization of the optical properties of diamond color centers based on Pb impurities. An ensemble photoluminescence analysis of their spectral emission was performed at different excitation wavelengths in the 405-520 nm range and at different temperatures in the 4-300 K range. The series of observed spectral features consist of different emission lines associated with Pb-related defects. Finally, a room-temperature investigation of single-photon emitters under 490.5 nm laser excitation is reported, revealing different spectral signatures with respect to those already reported under 514 nm excitation. This work represents a substantial progress with respect to previous studies on Pb-related color centers, both in the attribution of an articulated series of spectral features and in the understanding of the formation process of this type of defect, thus clarifying the potential of this system for high-impact applications in quantum technologies. △ Less

Submitted 2 June, 2021; originally announced June 2021.

Fluorine-based color centers in diamond

Authors: S. Ditalia Tchernij, T. Lühmann, E. Corte, F. Sardi, F. Picollo, P. Traina, M. Brajkovic, A. Crnjac, S. Pezzagna, I. P. Degiovanni, E. Moreva, P. Aprà, P. Olivero, Z. Siketić, J. Meijer, M. Genovese, J. Forneris

Abstract: We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room-temperature photoluminescence emission consists of a weak emission line at 558 nm and of intense bands in the 600 - 750 nm spectral range. Characterization at liquid He temperature reveals the presence of a structured s… ▽ More We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room-temperature photoluminescence emission consists of a weak emission line at 558 nm and of intense bands in the 600 - 750 nm spectral range. Characterization at liquid He temperature reveals the presence of a structured set of lines in the 600 - 670 nm spectral range. We discuss the dependence of the emission properties of F-related optical centers on different experimental parameters such as the operating temperature and the excitation wavelength. The correlation of the emission intensity with F implantation fluence, and the exclusive observation of the afore-mentioned spectral features in F-implanted and annealed samples provides a strong indication that the observed emission features are related to a stable F-containing defective complex in the diamond lattice. △ Less

Submitted 9 December, 2020; v1 submitted 28 September, 2020; originally announced September 2020.

Comments: 10 pages, 5 figures

Photoluminescence of lead-related optical centers in single-crystal diamond

Authors: S. Ditalia Tchernij, T. Lühmann, J. Forneris, T. Herzig, J. Küpper, A. Damin, S. Santonocito, P. Traina, E. Moreva, F. Celegato, S. Pezzagna, I. P. Degiovanni, M. Jakšić, M. Genovese, J. Meijer, P. Olivero

Abstract: We report on the creation and characterization of Pb-related color centers in diamond upon ion implantation and subse- quent thermal annealing. Their optical emission in photoluminescence (PL) regime consists of an articulated spectrum with intense emission peaks at 552.1 nm and 556.8 nm, accompanied by a set of additional lines in the 535700 nm range. The attribution of the PL emission to stable… ▽ More We report on the creation and characterization of Pb-related color centers in diamond upon ion implantation and subse- quent thermal annealing. Their optical emission in photoluminescence (PL) regime consists of an articulated spectrum with intense emission peaks at 552.1 nm and 556.8 nm, accompanied by a set of additional lines in the 535700 nm range. The attribution of the PL emission to stable Pb-based defects is corroborated by the correlation of its intensity with the implantation fluence of Pb ions, while none of the reported features is observed in reference samples implanted with C ions. Furthermore, PL measurements performed as a function of sample temperature (143-300 K range) and un- der different excitation wavelengths (532 nm, 514 nm, 405 nm) suggest that the complex spectral features observed in Pb-implanted diamond might be related to a variety of different defects and/or charge states. This work follows from previous reports on optically active centers in diamond based on group IV impurities, such as Si, Ge and Pb. In perspective, a comprehensive study of this set of defect complexes could bring significant insight on the common features involved in their formation and opto-physical properties, thus offering a solid basis for the devel- opment of a new generation of quantum-optical devices. △ Less

Submitted 5 June, 2018; originally announced June 2018.

Comments: 7 pages, 4 figures

Photo-physical properties of He-related color centers in diamond

Authors: G. Prestopino, M. Marinelli, E. Milani, C. Verona, G. Verona-Rinati P. Traina, E. Moreva, I. P. Degiovanni, M. Genovese, S. Ditalia Tchernij, F. Picollo, P. Olivero, J. Forneris

Abstract: Diamond is a promising platform for the development of technological applications in quantum optics and photonics. The quest for color centers with optimal photo-physical properties has led in recent years to the search for novel impurity-related defects in this material. Here, we report on a systematic investigation of the photo-physical properties of two He-related (HR) emission lines at 535 nm… ▽ More Diamond is a promising platform for the development of technological applications in quantum optics and photonics. The quest for color centers with optimal photo-physical properties has led in recent years to the search for novel impurity-related defects in this material. Here, we report on a systematic investigation of the photo-physical properties of two He-related (HR) emission lines at 535 nm and 560 nm created in three different diamond substrates upon implantation with 1.3 MeV He+ ions and subsequent annealing. The spectral features of the HR centers were studied in an "optical grade" diamond substrate as a function of several physical parameters, namely the measurement temperature, the excitation wavelength and the intensity of external electric fields. The emission lifetimes of the 535 nm and 560 nm lines were also measured by means of time-gated photoluminescence measurements, yielding characteristic decay times of (29 +- 5) ns and (106 +- 10) ns, respectively. The Stark shifting of the HR centers under the application of an external electrical field was observed in a CVD diamond film equipped with buried graphitic electrodes, suggesting a lack of inversion symmetry in the defects' structure. Furthermore, the photoluminescence mapping under 405 nm excitation of a "detector grade" diamond sample implanted at a 1x1010 cm-2 He+ ion fluence enabled to identify the spectral features of both the HR emission lines from the same localized optical spots. The reported results provide a first insight towards the understanding of the structure of He-related defects in diamond and their possible utilization in practical applications △ Less

Submitted 29 August, 2017; originally announced August 2017.

Comments: 9 pages, 3 figures

Single-photon-emitting optical centers in diamond fabricated upon Sn implantation

Authors: S. Ditalia Tchernij, T. Herzig, J. Forneris, J. Küpper, S. Pezzagna, P. Traina, E. Moreva, I. P. Degiovanni, G. Brida, N. Skukan, M. Genovese, M. Jakšić, J. Meijer, P. Olivero

Abstract: The fabrication of luminescent defects in single-crystal diamond upon Sn implantation and annealing is reported. The relevant spectral features of the optical centers (emission peaks at 593.5 nm, 620.3 nm, 630.7 nm and 646.7 nm) are attributed to Sn-related defects through the correlation of their photoluminescence (PL) intensity with the implantation fluence. Single Sn-related defects were identi… ▽ More The fabrication of luminescent defects in single-crystal diamond upon Sn implantation and annealing is reported. The relevant spectral features of the optical centers (emission peaks at 593.5 nm, 620.3 nm, 630.7 nm and 646.7 nm) are attributed to Sn-related defects through the correlation of their photoluminescence (PL) intensity with the implantation fluence. Single Sn-related defects were identified and characterized through the acquisition of their second-order auto-correlation emission functions, by means of Hanbury-Brown-Twiss interferometry. The investigation of their single-photon emission regime as a function of excitation laser power revealed that Sn-related defects are based on three-level systems with a 6 ns radiative decay lifetime. In a fraction of the studied centers, the observation of a blinking PL emission is indicative of the existence of a dark state. Furthermore, absorption dependence from the polarization of the excitation radiation with about 45 percent contrast was measured. This work shed light on the existence of a new optical center associated with a group-IV impurity in diamond, with similar photo-physical properties to the already well-known Si-V and Ge-V emitters, thus providing results of interest from both the fundamental and applicative points of view. △ Less

Submitted 26 September, 2017; v1 submitted 4 August, 2017; originally announced August 2017.

Comments: 10 pages, 4 figures

Mapping the local spatial charge in defective diamond by means of NV sensors - A "self-diagnostic" concept

Authors: J. Forneris, S. Ditalia Tchernij, P. Traina, E. Moreva, N. Skukan, M. Jakšić, V. Grilj, L. Croin, G. Amato, I. P. Degiovanni, B. Naydenov, F. Jelezko, M. Genovese, P. Olivero

Abstract: Electrically-active defects have a significant impact on the performance of electronic devices based on wide band-gap materials such as diamond. This issue is ubiquitous in diamond science and technology, since the presence of charge traps in the active regions of different classes of diamond-based devices (detectors, power diodes, transistors) can significantly affect their performances, due to t… ▽ More Electrically-active defects have a significant impact on the performance of electronic devices based on wide band-gap materials such as diamond. This issue is ubiquitous in diamond science and technology, since the presence of charge traps in the active regions of different classes of diamond-based devices (detectors, power diodes, transistors) can significantly affect their performances, due to the formation of space charge, memory effects and the degradation of the electronic response associated with radiation damage. Among the most common defects in diamond, the nitrogen-vacancy (NV) center possesses unique spin properties which enable high-sensitivity field sensing at the nanoscale. Here we demonstrate that NV ensembles can be successfully exploited to perform a direct local mapping of the internal electric field distribution of a graphite-diamond-graphite junction exhibiting electrical properties dominated by trap- and space-charge-related conduction mechanisms. By performing optically-detected magnetic resonance measurements, we performed both punctual readout and spatial mapping of the electric field in the active region at different bias voltages. In this novel "self-diagnostic" approach, defect complexes represent not only the source of detrimental space charge effects, but also a unique tool to directly investigate them, by providing experimental evidences on the conduction mechanisms that in previous studies could only be indirectly inferred on the basis of conventional electrical and optical characterization. △ Less

Submitted 24 June, 2017; originally announced June 2017.

Journal ref: Phys. Rev. Applied 10, 014024 (2018)

Single-photon emitters based on NIR colour centres in diamond coupled with solid immersion lenses

Authors: D. Gatto Monticone, J. Forneris, M. Levi, A. Battiato, F. Picollo, P. Olivero, P. Traina, E. Moreva, E. Enrico, G. Brida, I. P. Degiovanni, M. Genovese, G. Amato, L. Boarino

Abstract: Single-photon sources represent a key enabling technology in quantum optics, and single colour centres in diamond are a promising platform to serve this purpose, due to their high quantum efficiency and photostability at room temperature. The widely studied nitrogen vacancy centres are characterized by several limitations, thus other defects have recently been considered, with a specific focus of… ▽ More Single-photon sources represent a key enabling technology in quantum optics, and single colour centres in diamond are a promising platform to serve this purpose, due to their high quantum efficiency and photostability at room temperature. The widely studied nitrogen vacancy centres are characterized by several limitations, thus other defects have recently been considered, with a specific focus of centres emitting in the Near Infra-Red. In the present work, we report on the coupling of native near-infrared-emitting centres in high-quality single crystal diamond with Solid Immersion Lens structures fabricated by Focused Ion Beam lithography. The reported improvements in terms of light collection efficiency make the proposed system an ideal platform for the development of single-photon emitters with appealing photophysical and spectral properties. △ Less

Submitted 25 August, 2016; originally announced August 2016.

Comments: 17 pages, 5 figures

Journal ref: International Journal of Quantum Information 12 (7-8), 1560011 (2014)

Electroluminescence from nitrogen-vacancy and interstitial-related centers in bulk diamond stimulated by ion-beam-fabricated sub-superficial graphitic micro-electrodes

Authors: J. Forneris, S. Ditalia Tchernij, A. Battiato, F. Picollo, A. Tengattini, V. Grilj, N. Skukan, G. Amato, L. Boarino, I. P. Degiovanni, E. Enrico, P. Traina, M. Jakšić, M. Genovese, P. Olivero

Abstract: We report on the fabrication and characterization of a single-crystal diamond device for the electrical stimula- tion of light emission from nitrogen-vacancy (NV0) and other defect-related centers. Pairs of sub-superficial graphitic micro-electrodes embedded in insulating diamond were fabricated by a 6 MeV C3+ micro-beam irra- diation followed by thermal annealing. A photoluminescence (PL) charact… ▽ More We report on the fabrication and characterization of a single-crystal diamond device for the electrical stimula- tion of light emission from nitrogen-vacancy (NV0) and other defect-related centers. Pairs of sub-superficial graphitic micro-electrodes embedded in insulating diamond were fabricated by a 6 MeV C3+ micro-beam irra- diation followed by thermal annealing. A photoluminescence (PL) characterization evidenced a low radiation damage concentration in the inter-electrode gap region, which did not significantly affect the PL features domi- nated by NV centers. The operation of the device in electroluminescence (EL) regime was investigated by ap- plying a bias voltage at the graphitic electrodes, resulting in the injection of a high excitation current above a threshold voltage (~300V), which effectively stimulated an intense EL emission from NV0 centers. In addition, we report on the new observation of two additional sharp EL emission lines (at 563 nm and 580 nm) related to interstitial defects formed during MeV ion beam fabrication. △ Less

Submitted 8 July, 2015; originally announced July 2015.

Electrical stimulation of single-photon emission from nitrogen-vacancy centers in diamond with sub-superficial graphitic electrodes

Authors: J. Forneris, D. Gatto Monticone, P. Traina, V. Grilj, G. Brida, G. Amato, L. Boarino, E. Enrico, I. P. Degiovanni, E. Moreva, N. Skukan, M. Jakšić, M. Genovese, P. Olivero

Abstract: Focused MeV ion beams with micrometric resolution are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk. Their effectiveness has been shown for the fabrication of multi-electrode ionizing radiation detectors and cellular biosensors. In this work we investigate such fabrication method for the electrical excitation of color centers in diamond… ▽ More Focused MeV ion beams with micrometric resolution are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk. Their effectiveness has been shown for the fabrication of multi-electrode ionizing radiation detectors and cellular biosensors. In this work we investigate such fabrication method for the electrical excitation of color centers in diamond. Differently from optically-stimulated light emission from color centers in diamond, electroluminescence (EL) requires a high current flowing in the diamond subgap states between the electrodes. With this purpose, buried graphitic electrode pairs with a spacing of 10 $μ$m were fabricated in the bulk of a single-crystal diamond sample using a 6 MeV C microbeam. The electrical characterization of the structure showed a significant current above an effective voltage threshold of 150V, which was interpreted according to the theory of Space Charge Limited Current. The EL imaging allowed to identify the electroluminescent regions and the residual vacancy distribution associated with the fabrication technique. Measurements evidenced bright electroluminescent emission from native neutrally-charged nitrogen-vacancy centers ($NV^0$); the acquired spectra highlighted the absence of EL associated with radiation damage. △ Less

Submitted 12 September, 2014; v1 submitted 1 August, 2014; originally announced August 2014.

Comments: This article has been withdrawn due to the inclusion of additional upgrades and modifications, which significantly improve the paper. A new submission will be performed at a later stage

Electroluminescence from a diamond device with ion-beam-micromachined buried graphitic electrodes

Authors: J. Forneris, A. Battiato, D. Gatto Monticone, F. Picollo, G. Amato, L. Boarino, G. Brida, I. P. Degiovanni, E. Enrico, M. Genovese, E. Moreva, P. Traina, C. Verona, G. Verona-Rinati, P. Olivero

Abstract: Focused MeV ion microbeams are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk, as demonstrated in previous works with the fabrication of multi-electrode ionizing radiation detectors and cellular biosensors. In this work we investigate the suitability of the fabrication method for the electrical excitation of colour centres in diamond. Di… ▽ More Focused MeV ion microbeams are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk, as demonstrated in previous works with the fabrication of multi-electrode ionizing radiation detectors and cellular biosensors. In this work we investigate the suitability of the fabrication method for the electrical excitation of colour centres in diamond. Differently from photoluminescence, electroluminescence requires an electrical current flowing through the diamond sub-gap states for the excitation of the colour centres. With this purpose, buried graphitic electrodes with a spacing of 10 micrometers were fabricated in the bulk of a detector-grade CVD single-crystal diamond sample using a scanning 1.8 MeV He micro-beam. The current flowing in the gap region between the electrodes upon the application of a 250 V bias voltage was exploited as the excitation pump for the electroluminescence of different types of colour centres localized in the above-mentioned gap. The bright light emission was spatially mapped using a confocal optical microscopy setup. The spectral analysis of electroluminescence revealed the emission from neutrally-charged nitrogen-vacancy centres ($NV^0$, $λ_{ZPL}$ = 575 nm), as well as from cluster crystal dislocations (A-band, λ = 400-500 nm). Moreover, an electroluminescence signal with appealing spectral features (sharp emission at room temperature, low phonon sidebands) from He-related defects was detected ($λ_{ZPL}$ = 536.3 nm, $λ_{ZPL}$ = 560.5 nm); a low and broad peak around λ = 740 nm was also observed and tentatively ascribed to Si-V or GR1 centres. These results pose interesting future perspectives for the fabrication of electrically-stimulated single-photon emitters in diamond for applications in quantum optics and quantum cryptography. △ Less

Submitted 29 July, 2014; originally announced July 2014.

Journal ref: Nuclear Instruments and Methods in Physics Research B 348 (2015) 187

Native NIR-emitting single colour centres in CVD diamond

Authors: D. Gatto Monticone, P. Traina, E. Moreva, J. Forneris, P. Olivero, I. P. Degiovanni, F. Taccetti, L. Giuntini, G. Brida, G. Amato, M. Genovese

Abstract: Single-photon sources are a fundamental element for developing quantum technologies, and sources based on colour centres in diamonds are among the most promising candidates. The well-known NV centres are characterized by several limitations, thus few other defects have recently been considered. In the present work, we characterize in detail native efficient single colour centres emitting in the ne… ▽ More Single-photon sources are a fundamental element for developing quantum technologies, and sources based on colour centres in diamonds are among the most promising candidates. The well-known NV centres are characterized by several limitations, thus few other defects have recently been considered. In the present work, we characterize in detail native efficient single colour centres emitting in the near infra-red in both standard IIa single-crystal and electronic-grade polycrystalline commercial CVD diamond samples. In the former case, a high-temperature annealing process in vacuum is necessary to induce the formation/activation of luminescent centres with good emission properties, while in the latter case the annealing process has marginal beneficial effects on the number and performances of native centres in commercially available samples. Although displaying significant variability in several photo physical properties (emission wavelength, emission rate instabilities, saturation behaviours), these centres generally display appealing photophysical properties for applications as single photon sources: short lifetimes, high emission rates and strongly polarized light. The native centres are tentatively attributed to impurities incorporated in the diamond crystal during the CVD growth of high-quality type IIa samples, and offer promising perspectives in diamond-based photonics. △ Less

Submitted 18 March, 2014; originally announced March 2014.

Comments: 27 pages, 10 figures. Submitted to "New Journal of Phsyics", NJP-100003.R2

Journal ref: New Journal of Physics 16, 053005 (2014)

Quantum characterization of superconducting photon counters

Authors: Giorgio Brida, Luigi Ciavarella, Ivo P. Degiovanni, Marco Genovese, Lapo Lolli, Maria G. Mingolla, Fabrizio Piacentini, Mauro Rajteri, Emanuele Taralli, Matteo G. A. Paris

Abstract: We address the quantum characterization of photon counters based on transition-edge sensors (TESs) and present the first experimental tomography of the positive operator-valued measure (POVM) of a TES. We provide the reliable tomographic reconstruction of the POVM elements up to 11 detected photons and M=100 incoming photons, demonstrating that it is a linear detector. We address the quantum characterization of photon counters based on transition-edge sensors (TESs) and present the first experimental tomography of the positive operator-valued measure (POVM) of a TES. We provide the reliable tomographic reconstruction of the POVM elements up to 11 detected photons and M=100 incoming photons, demonstrating that it is a linear detector. △ Less

Submitted 3 May, 2012; v1 submitted 15 March, 2011; originally announced March 2011.

Comments: 3 figures, NJP (to appear)

Journal ref: New J. Phys. 14 (2012) 085001