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Optical, magneto-optical properties and fiber-drawing ability of tellurite glasses in the TeO2-ZnO-BaO ternary system
Authors:
J. Hrabovsky,
L. Strizik,
F. Desevedavy,
S. Tazlaru,
M. Kucera,
L. Nowak,
R. Krystufek,
J. Mistrik,
V. Dedic,
V. Kopecky Jr.,
G. Gadret,
T. Wagner,
F. Smektala,
M. Veis
Abstract:
The presented work is focused on the optical and magneto-optical characterization of TeO2-ZnO-BaO (TZB) tellurite glasses. We investigated the refractive index and extinction coefficient dispersion by spectroscopic ellipsometry from ultraviolet, 0.193 um, up to mid infrared, 25 um spectral region. Studied glasses exhibited large values of linear (n632 = 1.91-2.09) and non-linear refractive index (…
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The presented work is focused on the optical and magneto-optical characterization of TeO2-ZnO-BaO (TZB) tellurite glasses. We investigated the refractive index and extinction coefficient dispersion by spectroscopic ellipsometry from ultraviolet, 0.193 um, up to mid infrared, 25 um spectral region. Studied glasses exhibited large values of linear (n632 = 1.91-2.09) and non-linear refractive index (n2 = 1.20-2.67x10-11 esu), Verdet constant (V632 = 22-33 radT-1m-1) and optical band gap energy (Eg = 3.7-4.1 eV). The materials characterization revealed that BaO substitution by ZnO leads (at constant content of TeO2) to an increase in linear and nonlinear refractive index as well as Verdet constant while the optical band gap energy decreases. Fiber drawing ability of TeO2-ZnO-BaO glassy system has been demonstrated on 60TeO2-20ZnO-20BaO glass with presented mid infrared attenuation coefficient. Specific parameters such as dispersion and single oscillator energy, Abbe number, and first-/ third-order optical susceptibility are enclosed together with the values of magneto-optic anomaly derived from the calculation of measured dispersion of the refractive index.
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Submitted 2 August, 2023;
originally announced August 2023.
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Plasmon-plasmon interaction and the role of buffer in epitaxial graphene micro-flakes
Authors:
Mykhailo Shestopalov,
Václav Dědič,
Martin Rejhon,
Bohdan Morzhuk,
Vaisakh C. Paingad,
Ivan Mohelský,
Florian Le Mardelé,
Petr Kužel,
Milan Orlita,
Jan Kunc
Abstract:
We investigate the origin of the translational symmetry breaking in epitaxially grown single-layer graphene. Despite the surface morphology of homogeneous graphene films influenced by the presence of mutually parallel SiC surface terraces, the far-infrared magneto-plasmon absorption is almost independent of the angle between the probing light polarization and the orientation of terraces. Based on…
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We investigate the origin of the translational symmetry breaking in epitaxially grown single-layer graphene. Despite the surface morphology of homogeneous graphene films influenced by the presence of mutually parallel SiC surface terraces, the far-infrared magneto-plasmon absorption is almost independent of the angle between the probing light polarization and the orientation of terraces. Based on a detailed analysis of the plasmon absorption lineshape and its behavior in the magnetic field, supported by confocal Raman mapping and atomic force microscopy, we explain this discrepancy by spontaneously formed graphene micro flakes. We further support our conclusions using data collected on artificially created graphene nanoribbons: we recognize similar plasmon origin in artificial ribbons and naturally formed grains. An unexpectedly large plasmon resonance redshift was observed in nanoribbons. In a hydrogen-intercalated sample (which does not contain the buffer), this redshift is quantitatively taken into account by a plasmon-plasmon interaction. In non-intercalated samples featuring a buffer layer, this redshift is due to an interplay between the plasmon-plasmon coupling and Coulomb screening by the buffer-induced interface states. This model determines the density of interface states in good agreement with experimentally reported values.
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Submitted 17 February, 2023;
originally announced February 2023.
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Spectral Current Density and Responsivity Scaling for Fourier Transform Photocurrent Spectroscopy
Authors:
Jan Kunc,
Bohdan Morzhuk,
Mykhailo Shestopalov,
Tomáš Fridrišek,
Václav Dědič
Abstract:
We propose and experimentally verify two methods to scale arbitrary units to photocurrent spectral density (A/eV) in Fourier Transform Photocurrent (FTPC) spectroscopy. We also propose the FTPC scaling to responsivity (A/W), provided a narrow-band optical power measurement is available. The constant background of the interferogram provides a precise determination of the photocurrent spectral densi…
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We propose and experimentally verify two methods to scale arbitrary units to photocurrent spectral density (A/eV) in Fourier Transform Photocurrent (FTPC) spectroscopy. We also propose the FTPC scaling to responsivity (A/W), provided a narrow-band optical power measurement is available. The constant background of the interferogram provides a precise determination of the photocurrent spectral density. The second method relies on the scaled amplitude of the interferogram. Although the latter method leads to more significant errors, it still provides good order of magnitude estimates of the total photocurrent. We demonstrate the technique on a calibrated InGaAs diode and weak responsivity SiC interdigital sensors. We identify a series of impurity-band and interband transitions in the SiC sensors.
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Submitted 16 December, 2022;
originally announced December 2022.
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The electroluminescent properties based on bias polarity of the epitaxial graphene/aluminium SiC junction
Authors:
M. Rejhon,
J. Franc,
V. Dědič,
P. Hlídek,
J. Kunc
Abstract:
We investigated the electroluminescent properties of the epitaxial graphene/SiC junction. The temperature and current dependence of electroluminescence from the epitaxial graphene/SiC is measured within a temperature range of 50-300 K. The result of electroluminescence at 300~K is compared with the electroluminescent spectra from aluminium/SiC junction. The difference between the spectra is explai…
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We investigated the electroluminescent properties of the epitaxial graphene/SiC junction. The temperature and current dependence of electroluminescence from the epitaxial graphene/SiC is measured within a temperature range of 50-300 K. The result of electroluminescence at 300~K is compared with the electroluminescent spectra from aluminium/SiC junction. The difference between the spectra is explained by the different band bending, which could lead to the tunable LED due to the semi-metal character of the graphene. We observed the electroluminescence at both bias polarities and we described the blue shift in the spectra by Franz-Keldysh effect.
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Submitted 7 December, 2017;
originally announced December 2017.
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Effect of residual gas composition on epitaxial graphene growth on SiC
Authors:
Jan Kunc,
Martin Rejhon,
Eduard Belas,
Václav Dědič,
Pavel Moravec,
Jan Franc
Abstract:
In recent years, graphene growth optimization has been one of the key routes towards large-scale, high-quality graphene production. We have measured in-situ residual gas content during epitaxial graphene growth on silicon carbide (SiC) to find detrimental factors of epitaxial graphene growth. The growth conditions in high vacuum and purified argon are compared. The grown epitaxial graphene is stud…
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In recent years, graphene growth optimization has been one of the key routes towards large-scale, high-quality graphene production. We have measured in-situ residual gas content during epitaxial graphene growth on silicon carbide (SiC) to find detrimental factors of epitaxial graphene growth. The growth conditions in high vacuum and purified argon are compared. The grown epitaxial graphene is studied by Raman scattering mapping and mechanical strain, charge density, number of graphene layers and graphene grain size are evaluated. Charge density and carrier mobility has been studied by Hall effect measurements in van der Pauw configuration. We have identified a major role of chemical reaction of carbon and residual water. The rate of the reaction is lowered when purified argon is used. We also show, that according to time varying gas content, it is preferable to grow graphene at higher temperatures and shorter times. Other sources of growth environment contamination are also discussed. The reaction of water and carbon is discussed to be one of the factors increasing number of defects in graphene. The importance of purified argon and its sufficient flow rate is concluded to be important for high-quality graphene growth as it reduces the rate of undesired chemical reactions and provides more stable and defined growth ambient.
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Submitted 8 January, 2017;
originally announced January 2017.
