Nitrogen local electronic structure in Ga(In)AsN alloys by soft-X-ray absorption and emission: Implications for optical properties
Authors:
V. N. Strocov,
P. O. Nilsson,
T. Schmitt,
A. Augustsson,
L. Gridneva,
D. Debowska-Nilsson,
R. Claessen,
A. Yu. Egorov,
V. M. Ustinov,
Zh. I. Alferov
Abstract:
Soft-X-ray emission and absorption spectroscopies with their elemental specificity are used to determine the local electronic structure of N atoms in Ga(In)AsN diluted semiconductor alloys (N concentrations about 3%) in view of applications of such materials in optoelectronics. Deviations of the N local electronic structure in Ga(In)AsN from the crystalline state in GaN are dramatic in both vale…
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Soft-X-ray emission and absorption spectroscopies with their elemental specificity are used to determine the local electronic structure of N atoms in Ga(In)AsN diluted semiconductor alloys (N concentrations about 3%) in view of applications of such materials in optoelectronics. Deviations of the N local electronic structure in Ga(In)AsN from the crystalline state in GaN are dramatic in both valence and conduction bands. In particular, a depletion of the valence band maximum in the N local charge, taking place at the N impurities, appears as one of the fundamental origins of reduced optical efficiency of Ga(In)AsN. Incorporation of In in large concentrations forms In-rich N local environments such as In4N whose the electronic structure evolves towards improved efficiency. Furthermore, a k-character of some valence and conduction states, despite the random alloy nature of Ga(In)AsN, manifests itself in resonant inelastic X-ray scattering.
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Submitted 2 September, 2003; v1 submitted 10 March, 2003;
originally announced March 2003.
Electronic structure of GaAs1-xNx alloy by soft-X-ray absorption and emission: Origin of the reduced optical efficiency
Authors:
V. N. Strocov,
P. O. Nilsson,
A. Augustsson,
T. Schmitt,
D. Debowska-Nilsson,
R. Claessen,
A. Yu. Egorov,
V. M. Ustinov,
Zh. I. Alferov
Abstract:
The local electronic structure of N atoms in a diluted GaAs1-xNx (x=3%) alloy, in view of applications in optoelectronics, is determined for the first time using soft-X-ray absorption (SXA) and emission (SXE). Deviations from crystalline GaN, in particular in the conduction band, are dramatic. Employing the orbital character and elemental specificity of the SXE/SXA spectroscopies, we identify a…
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The local electronic structure of N atoms in a diluted GaAs1-xNx (x=3%) alloy, in view of applications in optoelectronics, is determined for the first time using soft-X-ray absorption (SXA) and emission (SXE). Deviations from crystalline GaN, in particular in the conduction band, are dramatic. Employing the orbital character and elemental specificity of the SXE/SXA spectroscopies, we identify a charge transfer from the N atoms at the valence band maximum, reducing the overlap with the wavefunction in conduction band minimum, as the main factor limiting the optical efficiency of GaAs1-xNx alloys. Moreover, a k-conserving process of resonant inelastic x-ray scattering involving the L1 derived valence and conduction states is discovered.
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Submitted 31 July, 2002;
originally announced July 2002.
