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Vapor phase epitaxy of antimonene-like nanocrystals on germanium by an MOCVD process
Authors:
Raimondo Cecchini,
Christian Martella,
Claudia Wiemer,
Alessio Lamperti,
Alberto Debernardi,
Lucia Nasi,
Laura Lazzarini,
Alessandro Molle,
Massimo Longo
Abstract:
Synthetic two-dimensional (2D) mono-elemental crystals, namely X-enes, have recently emerged as a new frontier for atomically thin nanomaterials with on-demand properties. Among X-enes, antimonene, the \b{eta}-phase allotrope of antimony, is formed by atoms arranged in buckled hexagonal rings bearing a comparatively higher environmental stability with respect to other players of this kind. However…
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Synthetic two-dimensional (2D) mono-elemental crystals, namely X-enes, have recently emerged as a new frontier for atomically thin nanomaterials with on-demand properties. Among X-enes, antimonene, the \b{eta}-phase allotrope of antimony, is formed by atoms arranged in buckled hexagonal rings bearing a comparatively higher environmental stability with respect to other players of this kind. However, the exploitation of monolayer or few-layer antimonene and other 2D materials in novel opto-electronic devices is still hurdled by the lack of scalable processes. Here, we demonstrated the viability of a bottom-up process for the epitaxial growth of antimonene-like nanocrystals (ANCs), based on a Metal-Organic Chemical Vapor Deposition (MOCVD) process, assisted by gold nanoparticles (Au NPs) on commensurate (111)-terminated Ge surfaces. The growth mechanism was investigated by large- and local-area microstructural analysis, revealing that the etching of germanium, catalyzed by the Au NPs, led to the ANCs growth on the exposed Ge (111) planes. As a supportive picture, ab-initio calculations rationalized this epitaxial relationship in terms of compressively strained \b{eta}-phase ANCs. Our process could pave the way to the realization of large-area antimonene layers by a deposition process compatible with the current semiconductor manufacturing technology.
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Submitted 15 July, 2023;
originally announced July 2023.
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Critical behavior of the insulator-to-metal transition in Te-hyperdoped Si
Authors:
Mao Wang,
A. Debernardi,
Wenxu Zhang,
Chi Xu,
Ye Yuan,
Yufang Xie,
Y. Berencén,
S. Prucnal,
M. Helm,
Shengqiang Zhou
Abstract:
Hyperdoping Si with chalcogens is a topic of great interest due to the strong sub-bandgap absorption exhibited by the resulting material, which can be exploited to develop broadband room-temperature infrared photodetectors using fully Si-compatible technology. Here, we report on the critical behavior of the impurity-driven insulator-to-metal transition in Te-hyperdoped Si layers fabricated via ion…
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Hyperdoping Si with chalcogens is a topic of great interest due to the strong sub-bandgap absorption exhibited by the resulting material, which can be exploited to develop broadband room-temperature infrared photodetectors using fully Si-compatible technology. Here, we report on the critical behavior of the impurity-driven insulator-to-metal transition in Te-hyperdoped Si layers fabricated via ion implantation followed by nanosecond pulsed-laser melting. Electrical transport measurements reveal an insulator-to-metal transition, which is also confirmed and understood by density functional theory calculations. We demonstrate that the metallic phase is governed by a power law dependence of the conductivity at temperatures below 25 K, whereas the conductivity in the insulating phase is well described by a variable-range hopping mechanism with a Coulomb gap at temperatures in the range of 2-50 K. These results show that the electron wave-function in the vicinity of the transition is strongly affected by the disorder and the electron-electron interaction.
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Submitted 15 September, 2020; v1 submitted 6 April, 2020;
originally announced April 2020.
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Impurity induced topological phase transitions in Cd$_3$As$_2$ and Na$_3$Bi Dirac semimetals
Authors:
A. Rancati,
N. Pournaghavi,
M. F. Islam,
A. Debernardi,
C. M. Canali
Abstract:
Using first-principles density functional theory calculations, combined with a topological analysis, we have investigated the electronic properties of $Cd_3As_2$ and $Na_3Bi$ Dirac topological semimetals doped with non-magnetic and magnetic impurities. Our systematic analysis shows that the selective breaking of the inversion, rotational and time-reversal symmetry, controlled by specific choices o…
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Using first-principles density functional theory calculations, combined with a topological analysis, we have investigated the electronic properties of $Cd_3As_2$ and $Na_3Bi$ Dirac topological semimetals doped with non-magnetic and magnetic impurities. Our systematic analysis shows that the selective breaking of the inversion, rotational and time-reversal symmetry, controlled by specific choices of the impurity doping, induces phase transitions from the original Dirac semimetal to a variety of topological phases such as, topological insulator, trivial semimetal, non-magnetic and magnetic Weyl semimetal, and Chern insulator. The Dirac semimetal phase can exist only if the rotational symmetry $C_n$ with $n > 2$ is maintained. One particularly interesting phase emerging in doped $Cd_3As_2$ is a coexisting Dirac-Weyl phase, which occurs when only inversion symmetry is broken while time-reversal symmetry and rotational symmetry are both preserved. To further characterize the low-energy excitations of this phase, we have complemented our density functional results with a continuum four-band $k\cdot p$ model, which indeed displays nodal points of both Dirac and Weyl type. The coexisting phase appears as a transition point between two topologically distinct Dirac phases, but may also survive in a small region of parameter space controlled by external strain.
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Submitted 11 November, 2020; v1 submitted 2 March, 2020;
originally announced March 2020.
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Breaking the doping limit in silicon by deep impurities
Authors:
Mao Wang,
A. Debernardi,
Y. Berencén,
R. Heller,
Chi Xu,
Ye Yuan,
Yufang Xie,
R. Böttger,
L. Rebohle,
W. Skorupa,
M. Helm,
S. Prucnal,
Shengqiang Zhou
Abstract:
N-type doping in Si by shallow impurities, such as P, As and Sb, exhibits an intrinsic limit due to the Fermi-level pinning via defect complexes at high doping concentrations. Here we demonstrate that doping Si with the chalcogen Te by non-equilibrium processing, a deep double donor, can exceed this limit and yield higher electron concentrations. In contrast to shallow impurities, both the interst…
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N-type doping in Si by shallow impurities, such as P, As and Sb, exhibits an intrinsic limit due to the Fermi-level pinning via defect complexes at high doping concentrations. Here we demonstrate that doping Si with the chalcogen Te by non-equilibrium processing, a deep double donor, can exceed this limit and yield higher electron concentrations. In contrast to shallow impurities, both the interstitial Te fraction decreases with increasing doping concentration and substitutional Te dimers become the dominant configuration as effective donors, leading to a non-saturating carrier concentration as well as to an insulator-to-metal transition. First-principle calculations reveal that the Te dimers possess the lowest formation energy and donate two electrons per dimer to the conduction band. These results provide novel insight into physics of deep impurities and lead to a possible solution for the ultra-high electron concentration needed in today's Si-based nanoelectronics.
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Submitted 1 November, 2018; v1 submitted 17 September, 2018;
originally announced September 2018.
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$Ab$-$initio$ electronic structure, optical and magneto-optical properties of $MnGaAs$ digital ferromagnetic heterostructures
Authors:
Patrizia Rosa,
Davide Sangalli,
Giovanni Onida,
Alberto Debernardi
Abstract:
We report on a theoretical study of the electronic, optical and magneto-optical properties of digital ferromagnetic hetero-structures based on $Mn$ $δ$--doped $GaAs$. We consider different structures corresponding to $Mn$ contents within the range 12-50\% and we study how the system changes as a function of the doping concentration. Our first--principles approach includes the spin-orbit interactio…
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We report on a theoretical study of the electronic, optical and magneto-optical properties of digital ferromagnetic hetero-structures based on $Mn$ $δ$--doped $GaAs$. We consider different structures corresponding to $Mn$ contents within the range 12-50\% and we study how the system changes as a function of the doping concentration. Our first--principles approach includes the spin-orbit interaction in a fully relativistic pseudopotential scheme and the local fields effect in the description of the optical absorption. We show that $Mn$ $δ$-doped $GaAs$ shares many properties with the uniformly doped $Ga_{1-x}Mn_xAs$ system, i.e. half-metallicity, similar absorption spectra, and moderate Kerr rotation angles in the visible spectral region.
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Submitted 20 February, 2015;
originally announced February 2015.
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Exploiting magnetic properties of Fe doping in zirconia
Authors:
Davide Sangalli,
Elena Cianci,
Alessio Lamperti,
Roberta Ciprian,
Franca Albertini,
Francesca Casoli,
Pierpaolo Lupo,
Lucia Nasi,
Marco Campanini,
Alberto Debernardi
Abstract:
In this study we explore, both from theoretical and experimental side, the effect of Fe doping in ZrO2 (ZrO2:Fe). By means of first principles simulation we study the magnetization density and the magnetic interaction between Fe atoms. We also consider how this is affected by the presence of oxygen vacancies and compare our findings with models based on impurity band and carrier mediated magnetic…
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In this study we explore, both from theoretical and experimental side, the effect of Fe doping in ZrO2 (ZrO2:Fe). By means of first principles simulation we study the magnetization density and the magnetic interaction between Fe atoms. We also consider how this is affected by the presence of oxygen vacancies and compare our findings with models based on impurity band and carrier mediated magnetic interaction. Experimentally thin films (~ 20 nm) of ZrO2:Fe at high doping concentration are grown by atomic layer deposition. We provide experimental evidence that Fe is uniformly distributed in the ZrO2 by transmission electron microscopy and energy dispersive X-ray mapping, while X-ray diffraction evidences the presence of the fluorite crystal structure. Alternating gradient force magnetometer measurements show magnetic signal at room temperature, however with low magnetic moment per atom. Results from experimental measures and theoretical simulations are compared.
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Submitted 15 February, 2013; v1 submitted 24 July, 2012;
originally announced July 2012.
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Stabilization of tetragonal/cubic phase in Fe doped Zirconia grown by atomic layer deposition
Authors:
Alessio Lamperti,
Elena Cianci,
Roberta Ciprian,
Davide Sangalli,
Alberto Debernardi
Abstract:
Achieving high temperature ferromagnetism by doping transition metals thin films is seen as a viable approach to integrate spin-based elements in innovative spintronic devices. In this work we investigated the effect of Fe doping on structural properties of ZrO2 grown by atomic layer deposition (ALD) using Zr(TMHD)4 for Zr and Fe(TMHD)3 for Fe precursors and ozone as oxygen source. The temperature…
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Achieving high temperature ferromagnetism by doping transition metals thin films is seen as a viable approach to integrate spin-based elements in innovative spintronic devices. In this work we investigated the effect of Fe doping on structural properties of ZrO2 grown by atomic layer deposition (ALD) using Zr(TMHD)4 for Zr and Fe(TMHD)3 for Fe precursors and ozone as oxygen source. The temperature during the growth process was fixed at 350°C. The ALD process was tuned to obtain Fe doped ZrO2 films with uniform chemical composition, as seen by time of flight secondary ion mass spectrometry. The control of Fe content was effectively reached, by controlling the ALD precursor pulse ratio, as checked by X-ray photoemission spectroscopy (XPS) and spectroscopic ellipsometry. From XPS, Fe was found in Fe3+ chemical state, which maximizes the magnetization per atom. We also found, by grazing incidence X-ray diffraction, that the inclusion of Fe impurities in ZrO2 induces amorphization in thin ZrO2 films, while stabilizes the high temperature crystalline tetragonal/cubic phase after rapid thermal annealing at 600°C.
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Submitted 13 June, 2012;
originally announced June 2012.
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The role of oxygen vacancies on the structure and the density of states of iron doped zirconia
Authors:
Davide Sangalli,
Alessio Lamperti,
Elena Cianci,
Roberta Ciprian,
Michele Perego,
Alberto Debernardi
Abstract:
In this paper we study, both with theoretical and experimental approach, the effect of iron doping in zirconia. Combining density functional theory (DFT) simulations with the experimental characterization of thin films, we show that iron is in the Fe3+ oxidation state and accordingly that the films are rich in oxygen vacancies (VO). VO favor the formation of the tetragonal phase in doped zirconia…
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In this paper we study, both with theoretical and experimental approach, the effect of iron doping in zirconia. Combining density functional theory (DFT) simulations with the experimental characterization of thin films, we show that iron is in the Fe3+ oxidation state and accordingly that the films are rich in oxygen vacancies (VO). VO favor the formation of the tetragonal phase in doped zirconia (ZrO2:Fe) and affect the density of state at the Fermi level as well as the local magnetization of Fe atoms. We also show that the Fe(2p) and Fe(3p) energy levels can be used as a marker for the presence of vacancies in the doped system. In particular the computed position of the Fe(3p) peak is strongly sensitive to the VO to Fe atoms ratio. A comparison of the theoretical and experimental Fe(3p) peak position suggests that in our films this ratio is close to 0.5. Besides the interest in the material by itself, ZrO2:Fe constitutes a test case for the application of DFT on transition metals embedded in oxides. In ZrO2:Fe the inclusion of the Hubbard U correction significantly changes the electronic properties of the system. However the inclusion of this correction, at least for the value U = 3.3 eV chosen in the present work, worsen the agreement with the measured photo-emission valence band spectra.
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Submitted 1 February, 2013; v1 submitted 6 June, 2012;
originally announced June 2012.
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Pseudo-potentials based first-principles approach to the magneto-optical Kerr effect: from metals to the inclusion of local fields and excitonic effects
Authors:
Davide Sangalli,
Andrea Marini,
Alberto Debernardi
Abstract:
We propose a first-principles scheme for the description of the magneto-optical kerr effect within density functional theory (DFT). Though the computation of Kerr parameters is often done within DFT, starting from the conductivity or the dielectric tensor, there is no formal justification to this choice.
As a first steps, using as reference materials iron, cobalt and nickel we show that pseudo-p…
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We propose a first-principles scheme for the description of the magneto-optical kerr effect within density functional theory (DFT). Though the computation of Kerr parameters is often done within DFT, starting from the conductivity or the dielectric tensor, there is no formal justification to this choice.
As a first steps, using as reference materials iron, cobalt and nickel we show that pseudo-potential based calculations give accurate predictions. Then we derive a formal expression for the full dielectric tensor in terms of the density-density correlation function. The derived equation is exact in systems with an electronic gap, with the possible exception of Chern insulators, and whenever the time reversal symmetry holds and can be used as a starting point for the inclusion of local fields and excitonic effects within time-dependent DFT for such systems.
In case of metals instead we show that, starting from the density-density correlation function, the term which describes the anomalous Hall effect is neglected giving a wrong conductivity.
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Submitted 28 September, 2012; v1 submitted 9 May, 2012;
originally announced May 2012.
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Exchange-correlation effects in the monoclinic to tetragonal phase stabilization of Yttrium-doped ZrO2: a first-principles approach
Authors:
Davide Sangalli,
Alberto Debernardi
Abstract:
We describe, within an ab-initio approach, the stabilization of the tetragonal phase vs. the monoclinic one in Yttrium-doped Zirconia. The process is believed to be influenced from different mechanisms. Indeed we show that there is a delicate balance between the change in electrostatic and kinetic energy and exchange-correlation effects. In the tetragonal phase the perturbation induced by doping i…
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We describe, within an ab-initio approach, the stabilization of the tetragonal phase vs. the monoclinic one in Yttrium-doped Zirconia. The process is believed to be influenced from different mechanisms. Indeed we show that there is a delicate balance between the change in electrostatic and kinetic energy and exchange-correlation effects. In the tetragonal phase the perturbation induced by doping is better screened at the price of sacrificing correlation energy. Our work opens the opportunity to use the same approach to predict the tetragonal phase stabilization of materials like Zirconia or Hafnia, with different and less characterized dopants.
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Submitted 15 December, 2011; v1 submitted 4 November, 2011;
originally announced November 2011.
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Anharmonic Self-Energy of Phonons: Ab Initio Calculations and Neutron Spin Echo Measurements
Authors:
A. Debernardi,
F. de Geuser,
J. Kulda,
M. Cardona,
E. E. Haller
Abstract:
We have calculated (ab initio) and measured (by spin-echo techniques) the anharmonic self-energy of phonons at the X-point of the Brillouin zone for isotopically pure germanium. The real part agrees with former, less accurate, high temperature data obtained by inelastic neutron scattering on natural germanium. For the imaginary part our results provide evidence that transverse acoustic phonons a…
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We have calculated (ab initio) and measured (by spin-echo techniques) the anharmonic self-energy of phonons at the X-point of the Brillouin zone for isotopically pure germanium. The real part agrees with former, less accurate, high temperature data obtained by inelastic neutron scattering on natural germanium. For the imaginary part our results provide evidence that transverse acoustic phonons at the X-point are very long lived at low temperatures, i.e. their probability of decay approaches zero, as a consequence of an unusual decay mechanism allowed by energy conservation.
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Submitted 10 December, 2002;
originally announced December 2002.
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Magneto-Optical Kerr Effect of Iron Thin Films on Paramagnetic Substrates
Authors:
A. Debernardi,
I. Galanakis,
M. Alouani,
H. Dreysse
Abstract:
First principles calculations of the magnetic properties and the magneto-optical Kerr effect (MOKE) of iron thin films epitaxially grown on the [001] surface of paramagnetic metals: copper, silver, gold, palladium, and platinum are presented. The role of hybridization with the substrate is investigated and it is shown how the relaxation effects influence the complex Kerr angle. The results are o…
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First principles calculations of the magnetic properties and the magneto-optical Kerr effect (MOKE) of iron thin films epitaxially grown on the [001] surface of paramagnetic metals: copper, silver, gold, palladium, and platinum are presented. The role of hybridization with the substrate is investigated and it is shown how the relaxation effects influence the complex Kerr angle. The results are obtained by means of the relativistic full-potential linear muffin-tin method, and the film is modeled using a slab geometry within a supercell technique.
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Submitted 12 November, 2002;
originally announced November 2002.
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Electronic Properties of Mn-Compounds Under Strain
Authors:
A. Debernardi,
M. Peressi,
A. Baldereschi
Abstract:
We study the physical properties of MnAs under strain by using accurate first-principles pseudopotential calculations. Our results provide new insight on the physics of strained multilayer that are grown epitaxially on different lattice mismatched substrates and which are presently of interest for spintronic applications. We compute the strain dependence of the structural parameters, electronic…
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We study the physical properties of MnAs under strain by using accurate first-principles pseudopotential calculations. Our results provide new insight on the physics of strained multilayer that are grown epitaxially on different lattice mismatched substrates and which are presently of interest for spintronic applications. We compute the strain dependence of the structural parameters, electronic bands, density of states and magnetization. In the region of strain/stress that is easily directly accessible to measurements, the effects on these physical quantities are linear. We also address the case of uniaxial stress inducing sizeable and strongly non linear effects on electronic and magnetic properties.
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Submitted 10 October, 2002;
originally announced October 2002.
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Anharmonic decay of phonons in semiconductors from first-principles calculations
Authors:
Alberto Debernardi,
Stefano Baroni,
Elisa Molinari
Abstract:
The anharmonic contribution to phonon lifetime and its temperature dependence is calculated from first principle in C, Si and Ge using third-order density-functional perturbation theory. Good agreement with available experimental data is obtained. Different competing two-phonon decay channels are compared and correlated with the density of final states.
The anharmonic contribution to phonon lifetime and its temperature dependence is calculated from first principle in C, Si and Ge using third-order density-functional perturbation theory. Good agreement with available experimental data is obtained. Different competing two-phonon decay channels are compared and correlated with the density of final states.
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Submitted 18 August, 1994;
originally announced August 1994.
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Third-order density-functional perturbation theory: a practical implementation with applications to anharmonic couplings in Si
Authors:
Alberto Debernardi,
Stefano Baroni
Abstract:
We present a formulation of third-order density-functional perturbation theory which is manifestly invariant with respect to unitary transfomations within the occupied-states manifold and is particularly suitable for a practical implementation of the so called `2n+1' theorem. Our implementation is demonstrated with the calculation of the third-order anharmonic coupling coefficients for some high…
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We present a formulation of third-order density-functional perturbation theory which is manifestly invariant with respect to unitary transfomations within the occupied-states manifold and is particularly suitable for a practical implementation of the so called `2n+1' theorem. Our implementation is demonstrated with the calculation of the third-order anharmonic coupling coefficients for some high-simmetry phonons in Silicon.
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Submitted 15 June, 1994;
originally announced June 1994.
