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Polarized Raman Analysis at Low Temperature to Examine Interface Phonons in InAs/GaAs_(1-x)Sb_x Quantum Dot Heterostructures
Authors:
Priyesh Kumar,
Sudip Kumar Deb,
Subhananda Chakrabarti,
Jhuma Saha
Abstract:
An experimental study of optical phonon modes, both normal and interface (IF) phonons, in bilayer strain-coupled InAs/GaAs_(1-x)Sb_x quantum dot heterostructures has been presented by means of low-temperature polarized Raman scattering. The effect of Sb-content on the frequency positions of these phonon modes has been very well correlated with the simulated strain. The Raman peaks show different f…
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An experimental study of optical phonon modes, both normal and interface (IF) phonons, in bilayer strain-coupled InAs/GaAs_(1-x)Sb_x quantum dot heterostructures has been presented by means of low-temperature polarized Raman scattering. The effect of Sb-content on the frequency positions of these phonon modes has been very well correlated with the simulated strain. The Raman peaks show different frequency shifts in the heterostructure with varying Sb-content in the capping layer. This shift is attributed to the strain relaxation, bigger size of quantum dots and type-II band alignment.
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Submitted 15 September, 2024;
originally announced September 2024.
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Giant Rashba effect at the topological surface of PrGe revealing antiferromagnetic spintronics
Authors:
Soma Banik,
Pranab Kumar Das,
Azzedine Bendounan,
Ivana Vobornik,
A. Arya,
Nathan Beaulieu,
Jun Fujii,
A. Thamizhavel,
P. U. Sastry,
A. K. Sinha,
D. M. Phase,
S. K. Deb
Abstract:
Rashba spin-orbit splitting in the magnetic materials opens up a new perspective in the field of spintronics. Here, we report a giant Rashba-type spin-orbit effect on PrGe [010] surface in the paramagnetic phase with Rashba coefficient α_R=5 eVÅ. Significant changes in the electronic band structure has been observed across the phase transitions from paramagnetic to antiferromagnetic (44 K) and fro…
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Rashba spin-orbit splitting in the magnetic materials opens up a new perspective in the field of spintronics. Here, we report a giant Rashba-type spin-orbit effect on PrGe [010] surface in the paramagnetic phase with Rashba coefficient α_R=5 eVÅ. Significant changes in the electronic band structure has been observed across the phase transitions from paramagnetic to antiferromagnetic (44 K) and from antiferromagnetic to the ferromagnetic ground state (41.5 K). We find that Pr 4f states in PrGe is strongly hybridized with the Pr 5d and Ge 4s-4p states near the Fermi level. The behavior of Rashba effect is found to be different in the k_x and the k_y directions showing electron-like and the hole-like bands, respectively. The possible origin of Rashba effect in the paramagnetic phase is related to the anti-parallel spin polarization present in this system. First-principles density functional calculations of Pr terminated surface with the anti-parallel spins shows a fair agreement with the experimental results. We find that the anti-parallel spins are strongly coupled to the lattice such that the PrGe system behaves like weak ferromagnetic system. Analysis of the energy dispersion curves at different magnetic phases showed that there is a competition between the Dzyaloshinsky-Moriya interaction and the exchange interaction which gives rise to the magnetic ordering in PrGe. Supporting evidences of the presence of Dzyaloshinsky-Moriya interaction are observed as anisotropic magnetoresistance with respect to field direction and first-order type hysteresis in the X-ray diffraction measurements. A giant negative magnetoresistance of 43% in the antiferromagnetic phase and tunable Rashba parameter with temperature across the magnetic transitions makes this material a suitable candidate for technological application in the antiferromagnetic spintronic devices.
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Submitted 21 September, 2016; v1 submitted 20 September, 2016;
originally announced September 2016.
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Effect of gamma irradiation on the structure and valence state of Nd in phosphate glass
Authors:
V. N. Rai,
B. N. Raja Sekhar,
D. M. Phase,
S. K. Deb
Abstract:
Fourier transform infrared (FTIR) spectra and X-ray photoelectron spectra (XPS) of Nd doped phosphate glasses have been studied before and after gamma irradiation in order to find the behavior of chemical bonds, which decide the structural changes in the glass samples. IR absorption spectra of these glasses are found dominated mainly by the characteristics phosphate groups, water (OH) present in t…
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Fourier transform infrared (FTIR) spectra and X-ray photoelectron spectra (XPS) of Nd doped phosphate glasses have been studied before and after gamma irradiation in order to find the behavior of chemical bonds, which decide the structural changes in the glass samples. IR absorption spectra of these glasses are found dominated mainly by the characteristics phosphate groups, water (OH) present in the glass network as well as on the composition of glass matrix. The effects of gamma irradiation are observed in the form of bond breaking and possible re-arrangement of the bonding in the glass. Energy dispersive X-ray spectroscopy (EDX) and XPS measurements show changes in the relative concentration of elements; particularly decrease in the concentration of oxygen in the glass samples after gamma irradiation, a possible source of oxygen vacancies. The decrease in the asymmetry in O 1s spectra after gamma irradiation indicates towards decrease in the concentration of bridging oxygen as a result of P-O-P bond breaking. Asymmetric profile of Nd 3d5/2peak after gamma irradiation is found to be due to conversion of Nd3+ to Nd2+ in the glass matrix.
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Submitted 18 June, 2014;
originally announced June 2014.
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Localized surface plasmon resonance (LSPR) and refractive index sensitivity of vacuum evaporated nanostructured gold thin films
Authors:
V. N. Rai,
A. K. Srivastava,
C. Mukherjee,
S. K. Deb
Abstract:
The plasmonic properties of vacuum evaporated nanostructured gold thin films having different types of nanoparticles are presented. The films with more than 6 nm thickness show presence of nanorods having non cylindrical shape with triangular base. Two characteristics plasmon bands have been recoreded in absorption spectra. First one occurs below 500 nm and other one at higher wavelength side. Bot…
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The plasmonic properties of vacuum evaporated nanostructured gold thin films having different types of nanoparticles are presented. The films with more than 6 nm thickness show presence of nanorods having non cylindrical shape with triangular base. Two characteristics plasmon bands have been recoreded in absorption spectra. First one occurs below 500 nm and other one at higher wavelength side. Both the peaks show dependence on the dielectric property of surroundings. The higher wavelength localized surface plasmon resonance (LSPR) peak shifts to higher wavelength with an increase in the nanoparticle size, surface roughness and refractive index of the surrounding (Methylene Blue dye coating). This shows that such thin films can be used as sensor for organic molecules with a refractive index sensitivity ranging from 250 - 305 nm/RIU (Refractive Index Unit).
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Submitted 18 June, 2014;
originally announced June 2014.
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Estimate of the Coulomb Correlation Energy in CeAg$_2$Ge$_2$ from Inverse Photoemission and High Resolution Photoemission Spectroscopy
Authors:
Soma Banik,
A. Arya,
Azzedine Bendounan,
M. Maniraj,
A. Thamizhavel,
I. Vobornik,
S. K. Dhar,
S. K. Deb
Abstract:
The occupied and the unoccupied electronic structure of CeAg$_2$Ge$_2$ single crystal has been studied using high resolution photoemission and inverse photoemission spectroscopy respectively. High resolution photoemission reveals the clear signature of Ce $4f$ states in the occupied electronic structure which was not observed earlier due to the poor resolution. The coulomb correlation energy in th…
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The occupied and the unoccupied electronic structure of CeAg$_2$Ge$_2$ single crystal has been studied using high resolution photoemission and inverse photoemission spectroscopy respectively. High resolution photoemission reveals the clear signature of Ce $4f$ states in the occupied electronic structure which was not observed earlier due to the poor resolution. The coulomb correlation energy in this system has been determined experimentally from the position of the $4f$ states above and below the Fermi level. Theoretically the correlation energy has been determined by using the first principles density functional calculations within the generalized gradient approximations taking into account the strong intra-atomic (on-site) interaction Hubbard $U_{eff}$ term. Although the valence band calculated with different $U_{eff}$ does not show significant difference, but the substantial changes are observed in the conduction band. The estimated value of correlation energy from both the theory and the experiment is $\approx$4.2~eV for CeAg$_2$Ge$_2$.
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Submitted 21 April, 2014;
originally announced April 2014.
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Structural investigations in BaFe2-xRuxAs2 as a function of Ru and temperature
Authors:
Shilpam Sharma,
A. Bharathi,
K. Vinod,
C. S. Sundar,
V. Srihari,
Smritijit Sen,
Haranath Ghosh,
A. K. Sinha,
S. K. Deb
Abstract:
We present Synchrotron XRD measurements on powdered single crystal samples of BaFe2-xRuxAs2 samples, as a function of Ru content at room temperature. The Rietveld refinements reveal that the a-axis increases with Ru substitution, while the c-axis decreases. The variation of positional co-ordinates of As (zAs), the Fe-As bond length and the As-Fe-As bond angles have been determined from the Rietvel…
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We present Synchrotron XRD measurements on powdered single crystal samples of BaFe2-xRuxAs2 samples, as a function of Ru content at room temperature. The Rietveld refinements reveal that the a-axis increases with Ru substitution, while the c-axis decreases. The variation of positional co-ordinates of As (zAs), the Fe-As bond length and the As-Fe-As bond angles have been determined from the Rietveld refinements. In the sample with x=0.1, temperature dependent XRD measurements were carried out. The results indicate that while the orthorhombicity shows the characteristic increase with decrease in temperature, the As-Fe-As bond angles, Fe-As bond length and positional co-ordinate of the As show definite anomalies close to the structural transition. First principle ab-initio simulations are performed in order to understand the experimentally observed anomalies in structural parameters. The experimental observations are discussed in the context of the simulation results.
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Submitted 12 May, 2014; v1 submitted 26 December, 2013;
originally announced December 2013.
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Spontaneous electric polarization and Magneto-dielectric coupling in ceramic multiferroic Co3TeO6
Authors:
Harishchandra Singh,
Haranath Ghosh,
A. K. Sinha,
M. N. Singh,
G. Sharma,
S. Patnaik,
S. K. Deb
Abstract:
We report observation of magneto-electric and magneto-dielectric couplings in ceramic Co3TeO6. Temperature dependent DC magnetization and dielectric constant measurements together indicate coupling between magnetic order and electronic polarization. Strong anomaly in dielectric constant at ~ 18K in zero magnetic field indicates presence of spontaneous polarization. Observations like weak ferromagn…
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We report observation of magneto-electric and magneto-dielectric couplings in ceramic Co3TeO6. Temperature dependent DC magnetization and dielectric constant measurements together indicate coupling between magnetic order and electronic polarization. Strong anomaly in dielectric constant at ~ 18K in zero magnetic field indicates presence of spontaneous polarization. Observations like weak ferromagnetic order at lower temperature, field and temperature dependences of the ferroelectric transition provide experimental verification of the recent theoretical proposal by P. Toledano et al., Phys. Rev. B 85, 214439 (2012). We provide direct evidence of spin-phonon coupling as possible origin of magnetic order.
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Submitted 25 September, 2013;
originally announced September 2013.
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Silicene Beyond Mono-layers - Different Stacking Configurations And Their Properties
Authors:
C. Kamal,
Aparna Chakrabarti,
Arup Banerjee,
S. K. Deb
Abstract:
We carry out a computational study on the geometric and electronic properties of multi-layers of silicene in different stacking configurations using a state-of-art abinitio density functional theory based calculations. In this work we investigate the evolution of these properties with increasing number of layers (n) ranging from 1 to 10. Though, mono-layer of silicene possesses properties similar…
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We carry out a computational study on the geometric and electronic properties of multi-layers of silicene in different stacking configurations using a state-of-art abinitio density functional theory based calculations. In this work we investigate the evolution of these properties with increasing number of layers (n) ranging from 1 to 10. Though, mono-layer of silicene possesses properties similar to those of graphene, our results show that the geometric and electronic properties of multi-layers of silicene are strikingly different from those of multi-layers of graphene. We observe that there exist strong inter-layer covalent bondings between the layers in multi-layers of silicene as opposed to weak van der Waal's bonding which exists between the graphene layers. The inter-layer bonding strongly influences the geometric and electronic structures of these multi-layers. Like bi-layers of graphene, silicene with two different stacking configurations AA and AB exhibits linear and parabolic dispersions around the Fermi level, respectively. However, unlike graphene, for bi-layers of silicene, these dispersion curves are shifted in band diagram; this is due to the strong inter-layer bonding present in the latter. For n > 3, we study the geometric and electronic properties of multi-layers with four different stacking configurations namely, AAAA, AABB, ABAB and ABC. Our results on cohesive energy show that all the multi-layers considered are energetically stable. Furthermore, we find that the three stacking configurations (AAAA, AABB and ABC) containing tetrahedral coordination have much higher cohesive energy than that of Bernal (ABAB) stacking configuration. This is in contrast to the case of multi-layers of graphene where ABAB is reported to be the lowest energy configuration.
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Submitted 17 October, 2012;
originally announced October 2012.
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Optical Properties of Graphene-like Two Dimensional Silicene
Authors:
Kamal Chinnathambi,
Aparna Chakrabarti,
Arup Banerjee,
S. K. Deb
Abstract:
We study optical properties of two dimensional silicene using density functional theory based calculations. Our results on optical response property calculations show that they strongly depend on direction of polarization of light, hence the optical absorption spectra are different for light polarized parallel and perpendicular to plane of silicence. The optical absorption spectra of silicene poss…
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We study optical properties of two dimensional silicene using density functional theory based calculations. Our results on optical response property calculations show that they strongly depend on direction of polarization of light, hence the optical absorption spectra are different for light polarized parallel and perpendicular to plane of silicence. The optical absorption spectra of silicene possess two major peaks: (i) a sharp peak at 1.74 eV due to transition from pi to pi* states and (ii) a broad peak in range of 4-10 eV due to excitation of sigma states to conduction bands. We also investigate the effect of external influences such as (a) transverse static electric field and (b) doping of hydrogen atoms (hydrogenation) on optical properties of silicene. Firstly, with electric field, it is observed that band gap can be opened up in silicene at Fermi level by breaking the inversion symmetry. We see appreciable changes in optical absorption due to band gap opening. Secondly, hydrogenation in silicene strongly modifies the hybridization and our geometry analysis indicates that the hybridization in silicene goes from mixture of sp^2 + sp^3 to purely sp^3. Therefore, there is no pi electron present in the system. Consequently, the electronic structure and optical absorption spectra of silicene get modified and it undergoes a transition from semi-metal to semiconductor due to hydrogenation.
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Submitted 23 May, 2012;
originally announced May 2012.
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Elastic and structural instability of cubic Sn3N4 and C3N4 under pressure
Authors:
Gopal K. Pradhan,
Anil Kumar,
Umesh V. Waghmare,
Sudip K. Deb,
Chandrabhas Narayana
Abstract:
We use in-situ high pressure angle dispersive x-ray diffraction measurements to determine the equation of state of cubic tin nitride Sn3N4 under pressure up to about 26 GPa. While we find no evidence for any structural phase transition, our estimate of the bulk modulus (B) is 145 GPa, much lower than the earlier theoretical estimates and that of other group IV-nitrides. We corroborate and underst…
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We use in-situ high pressure angle dispersive x-ray diffraction measurements to determine the equation of state of cubic tin nitride Sn3N4 under pressure up to about 26 GPa. While we find no evidence for any structural phase transition, our estimate of the bulk modulus (B) is 145 GPa, much lower than the earlier theoretical estimates and that of other group IV-nitrides. We corroborate and understand these results with complementary first-principles analysis of structural, elastic and vibrational properties of group IV-nitrides, and predict a structural transition of Sn3N4 at a higher pressure of 88 GPa compared to earlier predictions of 40 GPa. Our comparative analysis of cubic nitrides shows that bulk modulus of cubic C3N4 is the highest (379 GPa) while it is structurally unstable and should not exist at ambient conditions.
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Submitted 11 March, 2010;
originally announced March 2010.
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Pressure-induced phonon-freezing in the ZnBeSe alloy: a study via the percolation mesoscope
Authors:
Gopal K. Pradhan,
Chandrabhas Narayana,
Olivier Pages,
Abedalhasan Breidi,
Jihane Souhabi,
Andrei Viktor Postnikov,
Fouad El Haj Hassan,
Sudip K. Deb,
Franciszek Firszt,
Wojtek Paszkowicz,
Abhay Shukla
Abstract:
We use the 1-bond -> 2-phonon percolation doublet of zincblende alloys as a mesoscope for an unusual insight into their phonon behavior under pressure. We focus on (Zn,Be)Se and show by Raman scattering that the original Be-Se doublet at ambient pressure, of the stretching-bending type, turns into a pure-bending singlet at the approach of the high-pressure ZnSe-like rocksalt phase, an unnatural…
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We use the 1-bond -> 2-phonon percolation doublet of zincblende alloys as a mesoscope for an unusual insight into their phonon behavior under pressure. We focus on (Zn,Be)Se and show by Raman scattering that the original Be-Se doublet at ambient pressure, of the stretching-bending type, turns into a pure-bending singlet at the approach of the high-pressure ZnSe-like rocksalt phase, an unnatural one for the Be-Se bonds. The freezing of the Be-Se stretching mode is discussed within the scope of the percolation model (mesoscopic scale), with ab initio calculations in support (microscopic scale).
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Submitted 28 October, 2009; v1 submitted 27 October, 2009;
originally announced October 2009.
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Raman Scattering Investigation of Electron Phonon Coupling in Carbon substituted MgB2
Authors:
T. Sakuntala,
A. Bharathi,
S. K. Deb,
N. Gayathri,
C. S. Sundar,
Y. Hariharan
Abstract:
Room temperature Raman scattering measurements have been carried out on well characterized samples of MgB2-xCx. The Raman line corresponding to the E2g phonon mode shows progressive hardening from 620 cm-1 in pristine MgB2 to 775 cm-1 in the sample with carbon fraction x=0.2. The corresponding line width on the other hand, increases from a value of about 220 cm-1 to 286 cm-1 in samples with x =…
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Room temperature Raman scattering measurements have been carried out on well characterized samples of MgB2-xCx. The Raman line corresponding to the E2g phonon mode shows progressive hardening from 620 cm-1 in pristine MgB2 to 775 cm-1 in the sample with carbon fraction x=0.2. The corresponding line width on the other hand, increases from a value of about 220 cm-1 to 286 cm-1 in samples with x = 0.1, beyond which it decreases to a value 167 cm-1 for x=0.2. From the average mode frequency and the line width obtained from Raman measurements and taking the values of N(0) obtained from the calculated variation in s hole density of states in MgB2-xCx, the electron phonon coupling strength to the E2g phonon, l2g, is evaluated using Allen’s formula. This remains large for low C fraction, but shows rapid decrease for x > 0.10. Using this value of l2g appropriately weighted, TC is obtained from McMillan’s equation. These values are in good agreement with the experimentally measured TC variation in MgB2-xCx.
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Submitted 27 April, 2005;
originally announced April 2005.
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Raman Studies in MgB2-xCx
Authors:
T. Sakuntala,
S. K. Deb,
A. Bharathi,
S. Jemima Balaselvi,
C. S. Sundar,
Y. Hariharan
Abstract:
Raman scattering measurements have been carried out in MgB2-xCx for x=0.0 -0.30. The broad Raman band around 600cm-1 range, which corresponds to the E2g mode in MgB2 is seen to narrow and reduce in intensity with increasing carbon content. For x>0.15, new set of bands appear at 1200 cm-1 possibly arising from the B-C, E2g modes. The decrease in Tc with carbon substitution seems to correlate with…
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Raman scattering measurements have been carried out in MgB2-xCx for x=0.0 -0.30. The broad Raman band around 600cm-1 range, which corresponds to the E2g mode in MgB2 is seen to narrow and reduce in intensity with increasing carbon content. For x>0.15, new set of bands appear at 1200 cm-1 possibly arising from the B-C, E2g modes. The decrease in Tc with carbon substitution seems to correlate with this change over.
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Submitted 17 September, 2003;
originally announced September 2003.
