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A generalized calculation of the rate independent single crystal yield surface
Authors:
Matthew Kasemer,
Paul R. Dawson
Abstract:
In this paper, we discuss a method to calculate the topology of the rate independent single crystal yield surface for materials with arbitrary slip systems and arbitrary slip strengths. We describe the general problem, as motivated by Schmid's law, and detail the calculation of hyperplanes in deviatoric stress space, $\mathbb{D}^5$, which describe the criteria for slip on individual slip systems.…
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In this paper, we discuss a method to calculate the topology of the rate independent single crystal yield surface for materials with arbitrary slip systems and arbitrary slip strengths. We describe the general problem, as motivated by Schmid's law, and detail the calculation of hyperplanes in deviatoric stress space, $\mathbb{D}^5$, which describe the criteria for slip on individual slip systems. We focus on finding the intersection of five linearly independent hyperplanes which represent stresses necessary to satisfy the criteria for general plastic deformation. Finally, we describe a method for calculating the inner convex hull of these intersection points, which describe the vertices of the five dimensional polytope that represents the single crystal yield surface. Our method applies to arbitrary crystal structure, allowing for an arbitrary number and type of slip systems and families, considers plastic anisotropy via inter- and intra-family strength anisotropy, and further considers strength anisotropy between slip in the positive and negative direction. We discuss the calculation and possible applications, and share a computational implementation of the calculation of the single crystal yield surface.
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Submitted 2 March, 2025; v1 submitted 26 February, 2025;
originally announced February 2025.
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A Virtual Diffractometer For Creating Synthetic HEDM Images of Tessellated and Meshed Finite Element Polycrystals
Authors:
Paul R. Dawson,
Matthew P. Miller
Abstract:
To assist in the planning of in situ loading, HEDM experiments by generating synthetic diffraction images of virtual samples in loaded and unloaded states. The user designates a target grain in the virtual sample and specifies the set of reflections for which images are to be generated. The code generates several intermediate images, including: (1) the points of intersection between the diffracted…
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To assist in the planning of in situ loading, HEDM experiments by generating synthetic diffraction images of virtual samples in loaded and unloaded states. The user designates a target grain in the virtual sample and specifies the set of reflections for which images are to be generated. The code generates several intermediate images, including: (1) the points of intersection between the diffracted beam direction vector the detector plane; (2) reflection-dependent frequency distributions of the diffraction angle, $ω$; and (3) plots of the diffraction volume-weighted intensity distributions for the specified set of reflections. The final sets of plots are facsimiles of pixelated detector images which take into account characteristics of specific detectors, including its pixel size and point spread behavior.
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Submitted 30 March, 2023;
originally announced March 2023.
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Using Discrete Harmonic Expansions and Equilibrium Conditions to Estimate Intragrain Stress Distributions in Polycrystals from Grain-Averaged Data
Authors:
Paul R. Dawson,
Matthew. P. Miller
Abstract:
The application of harmonic expansions to estimate intra-grain stress distributions from grain-averaged stress data is presented that extends the capabilities of the open source code, MechMonics. The method is based on using an optimization algorithm to determine the harmonic expansion weights that reduce the violation of equilibrium while maintaining prescribed grain-averages. The method is demon…
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The application of harmonic expansions to estimate intra-grain stress distributions from grain-averaged stress data is presented that extends the capabilities of the open source code, MechMonics. The method is based on using an optimization algorithm to determine the harmonic expansion weights that reduce the violation of equilibrium while maintaining prescribed grain-averages. The method is demonstrated using synthetic data generated for uniaxial extension of a virtual polycrystal with the mechMet code.
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Submitted 29 June, 2021;
originally announced June 2021.
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Mechanical Analyses using Discrete Harmonic Expansions of Grain-Based Field Data
Authors:
Paul R. Dawson,
Matthew P. Miller
Abstract:
A methodology for computing expansion basis functions using discrete harmonic modes is presented. The discrete harmonic modes are determined grain-by-grain for virtual polycrystals for which finite element meshes are available. The expansion weights associated with representing field variables over grain domains are determined by exploiting the orthogonality of the harmonic modes. The methodology…
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A methodology for computing expansion basis functions using discrete harmonic modes is presented. The discrete harmonic modes are determined grain-by-grain for virtual polycrystals for which finite element meshes are available. The expansion weights associated with representing field variables over grain domains are determined by exploiting the orthogonality of the harmonic modes. The methodology is demonstrated with the representation of the axial stress distributions during tensile loading of a polycrystalline sample. An open source code, MechMonics, is available to researchers wishing to use the methodology to analyze data.
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Submitted 9 March, 2021;
originally announced March 2021.
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Polar InGaN/GaN quantum wells: Revisiting the impact of carrier localization on the green gap problem
Authors:
Daniel S. P. Tanner,
Philip Dawson,
Menno J. Kappers,
Rachel A. Oliver,
Stefan Schulz
Abstract:
We present a detailed theoretical analysis of the electronic and optical properties of c-plane InGaN/GaN quantum well structures with In contents ranging from 5% to 25%. Special attention is paid to the relevance of alloy induced carrier localization effects to the green gap problem. Studying the localization length and electron-hole overlaps at low and elevated temperatures, we find alloy-induced…
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We present a detailed theoretical analysis of the electronic and optical properties of c-plane InGaN/GaN quantum well structures with In contents ranging from 5% to 25%. Special attention is paid to the relevance of alloy induced carrier localization effects to the green gap problem. Studying the localization length and electron-hole overlaps at low and elevated temperatures, we find alloy-induced localization effects are crucial for the accurate description of InGaN quantum wells across the range of In content studied. However, our calculations show very little change in the localization effects when moving from the blue to the green spectral regime; i.e. when the internal quantum efficiency and wall plug efficiencies reduce sharply, for instance, the in-plane carrier separation due to alloy induced localization effects change weakly. We conclude that other effects, such as increased defect densities, are more likely to be the main reason for the green gap problem. This conclusion is further supported by our finding that the electron localization length is large, when compared to that of the holes, and changes little in the In composition range of interest for the green gap problem. Thus electrons may become increasingly susceptible to an increased (point) defect density in green emitters and as a consequence the nonradiative recombination rate may increase.
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Submitted 25 January, 2020;
originally announced January 2020.
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A methodology to evaluate continuum-scale yield surfaces based on the spatial distributions of yielding at the crystal scale
Authors:
Andrew C. Poshadel,
Paul R. Dawson
Abstract:
Using a correlation between local yielding and a multiaxial strength-to-stiffness parameter, the continuum-scale yield surface for a polyphase, polycrystalline solid is predicted. The predicted surface explicitly accounts for microstructure through the quantification of strength-to-stiffness based on a finite element model of a crystal-scale sample. The multiaxial strength-to-stiffness is evaluate…
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Using a correlation between local yielding and a multiaxial strength-to-stiffness parameter, the continuum-scale yield surface for a polyphase, polycrystalline solid is predicted. The predicted surface explicitly accounts for microstructure through the quantification of strength-to-stiffness based on a finite element model of a crystal-scale sample. The multiaxial strength-to-stiffness is evaluated from the elastic response of the sample and the restricted slip, single-crystal yield surface. Macroscopic yielding is defined by the propogation of a yield band through the sample and is detected with the aid of a flood fill agorithm. The methodology is demonstrated with the evaluation of a plane-stress yield surface for a dual-phase superaustenitic stainless steel.
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Submitted 28 November, 2017;
originally announced November 2017.
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Sensitivity of Crystal Stress Distributions to the Definition of Virtual Two-Phase Microstructures
Authors:
Andrew C. Poshadel,
Michael Gharghouri,
Paul R. Dawson
Abstract:
A systematic study of the sensitivities of simulation input on the computed stress distributions in two-phase microstructures is presented. The study supports a related investigation of the initiation and propagation of yielding in duplex stainless steel. Considered in the study are the identification of constitutive model parameters for the single-crystal elastic and plastic behaviors and the imp…
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A systematic study of the sensitivities of simulation input on the computed stress distributions in two-phase microstructures is presented. The study supports a related investigation of the initiation and propagation of yielding in duplex stainless steel. Considered in the study are the identification of constitutive model parameters for the single-crystal elastic and plastic behaviors and the importance of including dominant phase and grain morphologies in the instantiation of virtual samples. Behaviors computed using a finite element formulation are evaluated against experimental data for the macroscopic stress-strain behavior and against lattice strain data measured by neutron diffraction under in situ loading.
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Submitted 27 July, 2017;
originally announced July 2017.
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Initiation and Propagation of Plastic Yielding in Duplex Stainless Steel
Authors:
Andrew C. Poshadel,
Michael Gharghouri,
Paul R. Dawson
Abstract:
The elastoplastic behavior of a two-phase stainless steel alloy is explored at the crystal scale for five levels of stress biaxiality. The crystal lattice (elastic) strains were measured with neutron diffraction using tubular samples subjected to different combinations of axial load and internal pressure to achieve a range of biaxial stress ratios. Finite element simulations were conducted on virt…
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The elastoplastic behavior of a two-phase stainless steel alloy is explored at the crystal scale for five levels of stress biaxiality. The crystal lattice (elastic) strains were measured with neutron diffraction using tubular samples subjected to different combinations of axial load and internal pressure to achieve a range of biaxial stress ratios. Finite element simulations were conducted on virtual polycrystals using loading histories that mimicked the experimental protocols. For this, two-phase microstructures were instantiated based on microscopy images of the grain and phase topologies and on crystallographic orientation distributions from neutron diffraction. Detailed comparisons were made between the measured and computed lattice strains for several crystal reflections in both phases for scattering vectors in the axial, radial and hoop directions that confirm the model's ability to accurate predict the evolving local stress states. A strength-to-stiffness parameter for multiaxial stress states was applied to explain the initiation of yielding across the polycrystalline samples across the five levels of stress biaxiality. Finally, building off the multiaxial strength-to-stiffness, the propagation of yielding over the volume of a polycrystal was estimated in terms of an equation that provides the local stress necessary to initiate within crystals in terms of the macroscopic stress.
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Submitted 21 July, 2017;
originally announced July 2017.
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Role of anisotropic strength and stiffness in governing the initiation and propagation of yielding in polycrystalline solids
Authors:
Andrew C. Poshadel,
Paul R. Dawson
Abstract:
The ratio of directional strength-to-stiffness is important in governing the relative order in which individual crystals within a polycrystalline aggregate will yield as the aggregate is loaded. In this paper, a strength-to-stiffness parameter is formulated for multiaxial loading that extends the development of Wong and Dawson for uniaxial loading. Building on the principle of strength-to-stiffnes…
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The ratio of directional strength-to-stiffness is important in governing the relative order in which individual crystals within a polycrystalline aggregate will yield as the aggregate is loaded. In this paper, a strength-to-stiffness parameter is formulated for multiaxial loading that extends the development of Wong and Dawson for uniaxial loading. Building on the principle of strength-to-stiffness, a methodology for predicting the macroscopic stresses at which elements in a finite element mesh yield is developed. This analysis uses elastic strain data from one increment of a purely elastic finite element simulation to make the prediction, given knowledge of the single-crystal yield surface. Simulations of austenitic strainless steel AL6XN are used to demonstrated the effectivness of the strength-to-stiffness parameter and yield prediction methodology.
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Submitted 22 May, 2017;
originally announced May 2017.
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A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates
Authors:
D. Kundys,
D. Sutherland,
M. Davies,
F. Oehler,
J. Griffiths,
P. Dawson,
M. J. Kappers,
C. J. Humphreys,
S. Schulz,
F. Tang,
R. A. Oliver
Abstract:
In this paper we report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane and m-plane free-standing bulk GaN substrates where the In content varied from 0.14 to 0.28 in the m-plane series and 0.08 to 0.21 for the a-plane series. The low temperature photoluminescence spectra from both sets of samples are ver…
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In this paper we report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane and m-plane free-standing bulk GaN substrates where the In content varied from 0.14 to 0.28 in the m-plane series and 0.08 to 0.21 for the a-plane series. The low temperature photoluminescence spectra from both sets of samples are very broad with full width at half-maximum height increasing from 81 to 330 meV as the In fraction increases. Comparative photoluminescence excitation spectroscopy indicates that the recombination mainly involves strongly localised carriers. At a temperature of 10 K the degree of linear polarisation of the a-plane samples is much smaller than of the m-plane counterparts and also varies across the spectrum. From polarisation-resolved photoluminescence excitation spectroscopy we measured the energy splitting between the lowest valence sub-band states to lie in the range of 23-54 meV for both a-and m-plane samples in which we could observe distinct exciton features in the polarised photoluminescence excitation spectroscopy. Thus, the thermal occupation of a higher valence subband cannot be responsible for the reduction of the degree of linear polarisation. Time-resolved spectroscopy indicates that in a-plane samples there is an extra emission component which at least partly responsible for the reduction in the degree of linear polarisation.
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Submitted 11 November, 2016;
originally announced December 2016.
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Structural, electronic, and optical properties of $m$-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory
Authors:
S. Schulz,
D. P. Tanner,
E. P. O'Reilly,
M. A. Caro,
T. L. Martin,
P. A. J. Bagot,
M. P. Moody,
F. Tang,
J. T. Griffiths,
F. Oehler,
M. J. Kappers,
R. A. Oliver,
C. J. Humphreys,
D. Sutherland,
M. J. Davies,
P. Dawson
Abstract:
In this paper we present a detailed analysis of the structural, electronic, and optical properties of an $m$-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally characterized by x-ray diffraction, scanning transmission electron microscopy, and 3D atom probe tomography. The optical properties of the sample have been studied by photo…
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In this paper we present a detailed analysis of the structural, electronic, and optical properties of an $m$-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally characterized by x-ray diffraction, scanning transmission electron microscopy, and 3D atom probe tomography. The optical properties of the sample have been studied by photoluminescence (PL), time-resolved PL spectroscopy, and polarized PL excitation spectroscopy. The PL spectrum consisted of a very broad PL line with a high degree of optical linear polarization. To understand the optical properties we have performed atomistic tight-binding calculations, and based on our initial atom probe tomography data, the model includes the effects of strain and built-in field variations arising from random alloy fluctuations. Furthermore, we included Coulomb effects in the calculations. Our microscopic theoretical description reveals strong hole wave function localization effects due to random alloy fluctuations, resulting in strong variations in ground state energies and consequently the corresponding transition energies. This is consistent with the experimentally observed broad PL peak. Furthermore, when including Coulomb contributions in the calculations we find strong exciton localization effects which explain the form of the PL decay transients. Additionally, the theoretical results confirm the experimentally observed high degree of optical linear polarization. Overall, the theoretical data are in very good agreement with the experimental findings, highlighting the strong impact of the microscopic alloy structure on the optoelectronic properties of these systems.
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Submitted 1 December, 2015; v1 submitted 23 September, 2015;
originally announced September 2015.
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FEpX -- Finite Element Polycrystals: Theory, Finite Element Formulation, Numerical Implementation and Illustrative Examples
Authors:
Paul R. Dawson,
Donald E. Boyce
Abstract:
FEpX is a modeling framework for computing the elastoplastic deformations of polycrystalline solids. Using the framework, one can simulate the mechanical behavior of aggregates of crystals, referred to as virtual polycrystals, over large strain deformation paths. This article presents the theory, the finite element formulation, and important features of the numerical implementation that collective…
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FEpX is a modeling framework for computing the elastoplastic deformations of polycrystalline solids. Using the framework, one can simulate the mechanical behavior of aggregates of crystals, referred to as virtual polycrystals, over large strain deformation paths. This article presents the theory, the finite element formulation, and important features of the numerical implementation that collectively define the modeling framework. The article also provides several examples of simulating the elastoplastic behavior of polycrystalline solids to illustrate possible applications of the framework. There is an associated finite element code, also referred to as FEpX, that is based on the framework presented here and was used to perform the simulations presented in the examples. The article serves as a citable reference for the modeling framework for users of that code. Specific information about the formats of the input and output data, the code architecture, and the code archive are contained in other documents.
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Submitted 13 April, 2015;
originally announced April 2015.
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A Methodology to Determine Tooling Interface Temperature and Traction Conditions from Measured Force and Torque in Materials Processing Simulations Based on Multimesh Error Estimation
Authors:
Paul R. Dawson,
Donald E. Boyce
Abstract:
A methodology is presented for estimating average values for the temperature and the frictional traction over a tool-workpiece interface using measured values of force and torque applied to the tool. The approach was developed specifically for friction stir welding and friction stir processing applications, but is sufficiently general to be of use in a variety of other processes that involve slidi…
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A methodology is presented for estimating average values for the temperature and the frictional traction over a tool-workpiece interface using measured values of force and torque applied to the tool. The approach was developed specifically for friction stir welding and friction stir processing applications, but is sufficiently general to be of use in a variety of other processes that involve sliding contact and heating at a tool-workpiece interface. The methodology works with a finite element framework that is intended to predict the evolution of the microstructural state of the workpiece material as it undergoes a complex thermomechanical history imposed by the process tooling. We employ a three-dimensional, Eulerian, finite element formulation; it includes coupling among the solutions for velocity, temperature and material state evolution. A critical element of the methodology is a procedure to estimate the tool interface traction and temperature from typical, measured values of force and torque. The procedure leads naturally to an intuitive basis for estimating error that is used in conjunction with multiple meshes to assure convergence. The methodology is demonstrate for a suite of three experiments that had been previously published as part of a study on the effect of weld speed on friction stir welding. The probe interface temperatures and torques are estimated for all three weld speeds and the multi-mesh error estimation methodology is employed to quantify the rate of convergence. Finally, comparison of computed and measured power usage is used as a further validation. Using the converged results, trends in the material flow, temperature, stress, deformation rate and material state with changing weld conditions are examined.
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Submitted 30 March, 2014;
originally announced March 2014.
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Carrier localization mechanisms in InGaN/GaN quantum wells
Authors:
D. Watson-Parris,
M. J. Godfrey,
P. Dawson,
R. A. Oliver,
M. J. Galtrey,
M. J. Kappers,
C. J. Humphreys
Abstract:
Localization lengths of the electrons and holes in InGaN/GaN quantum wells have been calculated using numerical solutions of the effective mass Schrödinger equation. We have treated the distribution of indium atoms as random and found that the resultant fluctuations in alloy concentration can localize the carriers. By using a locally varying indium concentration function we have calculated the con…
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Localization lengths of the electrons and holes in InGaN/GaN quantum wells have been calculated using numerical solutions of the effective mass Schrödinger equation. We have treated the distribution of indium atoms as random and found that the resultant fluctuations in alloy concentration can localize the carriers. By using a locally varying indium concentration function we have calculated the contribution to the potential energy of the carriers from band gap fluctuations, the deformation potential and the spontaneous and piezoelectric fields. We have considered the effect of well width fluctuations and found that these contribute to electron localization, but not to hole localization. We also simulate low temperature photoluminescence spectra and find good agreement with experiment.
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Submitted 7 June, 2010;
originally announced June 2010.
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Electromagnetic interaction between a metallic nanoparticle and surface in tunnelling proximity modelling and experiment
Authors:
J. Mitra,
Lei Feng,
Michael G. Boyle,
P. Dawson
Abstract:
We simulate the localized surface plasmon resonances of an Au nanoparticle within tunneling proximity of a Au substrate and demonstrate that the modes may be identified with those responsible for light emission from a scanning tunneling microscope. Relative to the modes of an isolated nanoparticle these modes show significant red-shifting, extending further into the infrared with increasing radi…
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We simulate the localized surface plasmon resonances of an Au nanoparticle within tunneling proximity of a Au substrate and demonstrate that the modes may be identified with those responsible for light emission from a scanning tunneling microscope. Relative to the modes of an isolated nanoparticle these modes show significant red-shifting, extending further into the infrared with increasing radius, primarily due to a proximity-induced lowering of the effective bulk plasmon frequency. Spatial mapping of the field enhancement factor shows an oscillatory variation of the field, absent in the case of a dielectric substrate; also the degree of localization of the modes, and thus the resolution achievable electromagnetically, is shown to depend primarily on the nanoparticle radius with only a weak dependence on wavelength.
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Submitted 1 July, 2009;
originally announced July 2009.
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The tip-sample water bridge and light emission from scanning tunnelling microscopy
Authors:
Michael G Boyle,
J Mitra,
Paul Dawson
Abstract:
Light emission spectrum from a scanning tunnelling microscope (LESTM) is investigated as a function of relative humidity and shown to be a novel and sensitive means for probing the growth and properties of a water meniscus in the nm-scale. An empirical model of the light emission process is formulated and applied successfully to replicate the decay in light intensity and spectral changes observe…
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Light emission spectrum from a scanning tunnelling microscope (LESTM) is investigated as a function of relative humidity and shown to be a novel and sensitive means for probing the growth and properties of a water meniscus in the nm-scale. An empirical model of the light emission process is formulated and applied successfully to replicate the decay in light intensity and spectral changes observed with increasing relative humidity. The modelling indicates a progressive water filling of the tip-sample junction with increasing humidity or, more pertinently, of the volume of the localized surface plasmons responsible for light emission; it also accounts for the effect of asymmetry in structuring of the water molecules with respect to polarity of the applied bias. This is juxtaposed with the case of a non-polar liquid in the tip-sample nano cavity where no polarity dependence of the light emission is observed. In contrast to the discrete detection of the presence/absence of water bridge in other scanning probe experiments by measurement of the feedback parameter for instrument control LESTM offers a means of continuously monitoring the development of the water bridge with sub-nm sensitivity. The results are relevant to applications such as dip-pen nanolithography and electrochemical scanning probe microscopy.
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Submitted 1 July, 2009;
originally announced July 2009.
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K-matrices for 2D conformal field theories
Authors:
E. Ardonne,
P. Bouwknegt,
P. Dawson
Abstract:
In this paper we examine fermionic type characters (Universal Chiral Partition Functions) for general 2D conformal field theories with a bilinear form given by a matrix of the form K \oplus K^{-1}. We provide various techniques for determining these K-matrices, and apply these to a variety of examples including (higher level) WZW and coset conformal field theories. Applications of our results to…
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In this paper we examine fermionic type characters (Universal Chiral Partition Functions) for general 2D conformal field theories with a bilinear form given by a matrix of the form K \oplus K^{-1}. We provide various techniques for determining these K-matrices, and apply these to a variety of examples including (higher level) WZW and coset conformal field theories. Applications of our results to fractional quantum Hall systems and (level restricted) Kostka polynomials are discussed.
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Submitted 30 May, 2003; v1 submitted 6 December, 2002;
originally announced December 2002.
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Carrier relaxation with LO phonon decay in semiconductor quantum dots
Authors:
S. A. Levetas,
M. J. Godfrey,
P. Dawson
Abstract:
Analysis of an exactly soluble model of phonons coupled to a carrier in a quantum dot provides a clear illustration of a phonon bottleneck to relaxation. The introduction of three-phonon interactions leads to a broad window for relaxation by the processes of LO phonon scattering and decay.
Analysis of an exactly soluble model of phonons coupled to a carrier in a quantum dot provides a clear illustration of a phonon bottleneck to relaxation. The introduction of three-phonon interactions leads to a broad window for relaxation by the processes of LO phonon scattering and decay.
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Submitted 20 October, 2000;
originally announced October 2000.
