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The origin of switching noise in GaAs/AlGaAs lateral gated devices
Authors:
M. Pioro-Ladrière,
J. H. Davies,
A. R. Long,
A. S. Sachrajda,
L. Gaudreau,
P. Zawadzki,
J. Lapointe,
J. Gupta,
Z. Wasilewski,
S. A. Studenikin
Abstract:
We have studied the origin of switching (telegraph) noise at low temperature in lateral quantum structures defined electrostatically in GaAs/AlGaAs heterostructures by surface gates. The noise was measured by monitoring the conductance fluctuations around $e^2/h$ on the first step of a quantum point contact at around 1.2 K. Cooling with a positive bias on the gates dramatically reduces this nois…
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We have studied the origin of switching (telegraph) noise at low temperature in lateral quantum structures defined electrostatically in GaAs/AlGaAs heterostructures by surface gates. The noise was measured by monitoring the conductance fluctuations around $e^2/h$ on the first step of a quantum point contact at around 1.2 K. Cooling with a positive bias on the gates dramatically reduces this noise, while an asymmetric bias exacerbates it. We propose a model in which the noise originates from a leakage current of electrons that tunnel through the Schottky barrier under the gate into the doped layer. The key to reducing noise is to keep this barrier opaque under experimental conditions. Bias cooling reduces the density of ionized donors, which builds in an effective negative gate voltage. A smaller negative bias is therefore needed to reach the desired operating point. This suppresses tunnelling from the gate and hence the noise. The reduction in the density of ionized donors also strengthens the barrier to tunneling at a given applied voltage. Support for the model comes from our direct observation of the leakage current into a closed quantum dot, around $10^{-20} \mathrm{A}$ for this device. The current was detected by a neighboring quantum point contact, which showed monotonic steps in time associated with the tunneling of single electrons into the dot. If asymmetric gate voltages are applied, our model suggests that the noise will increase as a consequence of the more negative gate voltage applied to one of the gates to maintain the same device conductance. We observe exactly this behaviour in our experiments.
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Submitted 14 June, 2005; v1 submitted 24 March, 2005;
originally announced March 2005.
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Commensurability oscillations due to pinned and drifting orbits in a two-dimensional lateral surface superlattice
Authors:
David E. Grant,
Andrew R. Long,
John H. Davies
Abstract:
We have simulated conduction in a two-dimensional electron gas subject to a weak two-dimensional periodic potential, $V_x \cos(2πx/a) + V_y \cos(2πy/a)$. The usual commensurability oscillations in $ρ_{xx}(B)$ are seen with $V_x$ alone. An increase of $V_y$ suppresses these oscillations, rather than introducing the additional oscillations in $ρ_{yy}(B)$ expected from previous perturbation theorie…
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We have simulated conduction in a two-dimensional electron gas subject to a weak two-dimensional periodic potential, $V_x \cos(2πx/a) + V_y \cos(2πy/a)$. The usual commensurability oscillations in $ρ_{xx}(B)$ are seen with $V_x$ alone. An increase of $V_y$ suppresses these oscillations, rather than introducing the additional oscillations in $ρ_{yy}(B)$ expected from previous perturbation theories. We show that this behavior arises from drift of the guiding center of cyclotron motion along contours of an effective potential. Periodic modulation in the magnetic field can be treated in the same way.
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Submitted 8 October, 1999;
originally announced October 1999.
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Zero Frequency Current Noise for the Double Tunnel Junction Coulomb Blockade
Authors:
Selman Hershfield,
John H. Davies,
Per Hyldgaard,
Christopher J. Stanton,
John W. Wilkins
Abstract:
We compute the zero frequency current noise numerically and in several limits analytically for the coulomb blockade problem consisting of two tunnel junctions connected in series. At low temperatures over a wide range of voltages, capacitances, and resistances it is shown that the noise measures the variance in the number of electrons in the region between the two tunnel junctions. The average c…
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We compute the zero frequency current noise numerically and in several limits analytically for the coulomb blockade problem consisting of two tunnel junctions connected in series. At low temperatures over a wide range of voltages, capacitances, and resistances it is shown that the noise measures the variance in the number of electrons in the region between the two tunnel junctions. The average current, on the other hand, only measures the mean number of electrons. Thus, the noise provides additional information about transport in these devices which is not available from measuring the current alone.
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Submitted 20 July, 1992;
originally announced July 1992.
