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Efficient generation of spin currents by the Orbital Hall effect in pure Cu and Al and their measurement by a Ferris-wheel ferromagnetic resonance technique at the wafer level
Authors:
Amit Rothschild,
Nadav Am-Shalom,
Nirel Bernstein,
Mayan Meron,
Tal David,
Benjamin Assouline,
Elichai Frohlich,
Jiewen Xiao,
Binghai Yan,
Amir Capua
Abstract:
We present a new ferromagnetic resonance (FMR) method that we term the Ferris FMR. It is wideband, has significantly higher sensitivity as compared to conventional FMR systems, and measures the absorption line rather than its derivative. It is based on large-amplitude modulation of the externally applied magnetic field that effectively magnifies signatures of the spin-transfer torque making its me…
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We present a new ferromagnetic resonance (FMR) method that we term the Ferris FMR. It is wideband, has significantly higher sensitivity as compared to conventional FMR systems, and measures the absorption line rather than its derivative. It is based on large-amplitude modulation of the externally applied magnetic field that effectively magnifies signatures of the spin-transfer torque making its measurement possible even at the wafer-level. Using the Ferris FMR, we report on the generation of spin currents from the orbital Hall effect taking place in pure Cu and Al. To this end, we use the spin-orbit coupling of a thin Pt layer introduced at the interface that converts the orbital current to a measurable spin current. While Cu reveals a large effective spin Hall angle exceeding that of Pt, Al possesses an orbital Hall effect of opposite polarity in agreement with the theoretical predictions. Our results demonstrate additional spin- and orbit- functionality for two important metals in the semiconductor industry beyond their primary use as interconnects with all the advantages in power, scaling, and cost.
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Submitted 21 August, 2022;
originally announced August 2022.
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Eddy-mixing entropy as a measure of turbulent disorder in barotropic ocean jets
Authors:
Tomos W. David,
Laure Zanna,
David P. Marshall
Abstract:
Understanding the statistics of ocean geostrophic turbulence is of utmost importance in understanding its interactions with the global ocean circulation and the climate system as a whole. Here, a study of eddy-mixing entropy in a forced-dissipative barotropic ocean model is presented. Entropy is a concept of fundamental importance in statistical physics and information theory; motivated by equilib…
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Understanding the statistics of ocean geostrophic turbulence is of utmost importance in understanding its interactions with the global ocean circulation and the climate system as a whole. Here, a study of eddy-mixing entropy in a forced-dissipative barotropic ocean model is presented. Entropy is a concept of fundamental importance in statistical physics and information theory; motivated by equilibrium statistical mechanics theories of ideal geophysical fluids, we consider the effect of forcing and dissipation on eddy-mixing entropy, both analytically and numerically. By diagnosing the time evolution of eddy-mixing entropy it is shown that the entropy provides a descriptive tool for understanding three stages of the turbulence life cycle: growth of instability, formation of large scale structures and steady state fluctuations. Further, by determining the relationship between the time evolution of entropy and the maximum entropy principle, evidence is found for the action of this principle in a forced-dissipative flow. The maximum entropy potential vorticity statistics are calculated for the flow and are compared with numerical simulations. Deficiencies of the maximum entropy statistics are discussed in the context of the mean-field approximation for energy. This study highlights the importance entropy and statistical mechanics in the study of geostrophic turbulence.
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Submitted 26 February, 2017;
originally announced February 2017.
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Phase space tomography of cold-atoms dynamics in a weakly corrugated potential
Authors:
Shuyu Zhou,
Julien Chabé,
Ran Salem,
Tal David,
David Groswasser,
Mark Keil,
Yonathan Japha,
Ron Folman
Abstract:
We demonstrate tomographic reconstruction of the phase space distribution of atoms oscillating in a harmonic trap with weak potential corrugation caused by nanoscale imperfections in an atom chip. We find that deformations in these distributions are highly sensitive to anharmonic components of the potential. They are explained in terms of angular velocity dispersion of isoenergetic phase space tra…
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We demonstrate tomographic reconstruction of the phase space distribution of atoms oscillating in a harmonic trap with weak potential corrugation caused by nanoscale imperfections in an atom chip. We find that deformations in these distributions are highly sensitive to anharmonic components of the potential. They are explained in terms of angular velocity dispersion of isoenergetic phase space trajectories. We show that the method is applicable for probing classical and quantum dynamics of cold atoms, and we note its importance for future technological applications.
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Submitted 23 September, 2014; v1 submitted 13 March, 2014;
originally announced March 2014.
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Trapping cold atoms using surface-grown carbon nanotubes
Authors:
P. G. Petrov,
S. Machluf,
S. Younis,
R. Macaluso,
T. David,
B. Hadad,
Y. Japha,
M. Keil,
E. Joselevich,
R. Folman
Abstract:
We present a feasibility study for loading cold atomic clouds into magnetic traps created by single-wall carbon nanotubes grown directly onto dielectric surfaces. We show that atoms may be captured for experimentally sustainable nanotube currents, generating trapped clouds whose densities and lifetimes are sufficient to enable detection by simple imaging methods. This opens the way for a novel t…
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We present a feasibility study for loading cold atomic clouds into magnetic traps created by single-wall carbon nanotubes grown directly onto dielectric surfaces. We show that atoms may be captured for experimentally sustainable nanotube currents, generating trapped clouds whose densities and lifetimes are sufficient to enable detection by simple imaging methods. This opens the way for a novel type of conductor to be used in atomchips, enabling atom trapping at sub-micron distances, with implications for both fundamental studies and for technological applications.
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Submitted 22 December, 2008;
originally announced December 2008.
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Magnetic interactions of cold atoms with anisotropic conductors
Authors:
T. David,
Y. Japha,
V. Dikovsky,
R. Salem,
C. Henkel,
R. Folman
Abstract:
We analyze atom-surface magnetic interactions on atom chips where the magnetic trapping potentials are produced by current carrying wires made of electrically anisotropic materials. We discuss a theory for time dependent fluctuations of the magnetic potential, arising from thermal noise originating from the surface. It is shown that using materials with a large electrical anisotropy results in a…
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We analyze atom-surface magnetic interactions on atom chips where the magnetic trapping potentials are produced by current carrying wires made of electrically anisotropic materials. We discuss a theory for time dependent fluctuations of the magnetic potential, arising from thermal noise originating from the surface. It is shown that using materials with a large electrical anisotropy results in a considerable reduction of heating and decoherence rates of ultra-cold atoms trapped near the surface, of up to several orders of magnitude. The trap loss rate due to spin flips is expected to be significantly reduced upon cooling the surface to low temperatures. In addition, the electrical anisotropy significantly suppresses the amplitude of static spatial potential corrugations due to current scattering within imperfect wires. Also the shape of the corrugation pattern depends on the electrical anisotropy: the preferred angle of the scattered current wave fronts can be varied over a wide range. Materials, fabrication, and experimental issues are discussed, and specific candidate materials are suggested.
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Submitted 3 July, 2008; v1 submitted 15 June, 2008;
originally announced June 2008.
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Organized Current Patterns in Disordered Conductors
Authors:
Y. Japha,
O. Entin-Wohlman,
T. David,
R. Salem,
S. Aigner,
J. Schmiedmayer,
R. Folman
Abstract:
We present a general theory of current deviations in straight current carrying wires with random imperfections, which quantitatively explains the recent observations of organized patterns of magnetic field corrugations above micron-scale evaporated wires. These patterns originate from the most efficient electron scattering by Fourier components of the wire imperfections with wavefronts along the…
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We present a general theory of current deviations in straight current carrying wires with random imperfections, which quantitatively explains the recent observations of organized patterns of magnetic field corrugations above micron-scale evaporated wires. These patterns originate from the most efficient electron scattering by Fourier components of the wire imperfections with wavefronts along the $\pm 45^{\circ}$ direction. We show that long range effects of surface or bulk corrugations are suppressed for narrow wires or wires having an electrically anisotropic resistivity.
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Submitted 30 March, 2008;
originally announced March 2008.
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Long-Range Order in Electronic Transport through Disordered Metal Films
Authors:
S. Aigner,
L. Della Pietra,
Y. Japha,
O. Entin-Wohlman,
T. David,
R. Salem,
R. Folman,
J. Schmiedmayer
Abstract:
Ultracold atom magnetic field microscopy enables the probing of current flow patterns in planar structures with unprecedented sensitivity. In polycrystalline metal (gold) films we observe long-range correlations forming organized patterns oriented at +/- 45 deg relative to the mean current flow, even at room temperature and at length scales orders of magnitude larger than the diffusion length or…
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Ultracold atom magnetic field microscopy enables the probing of current flow patterns in planar structures with unprecedented sensitivity. In polycrystalline metal (gold) films we observe long-range correlations forming organized patterns oriented at +/- 45 deg relative to the mean current flow, even at room temperature and at length scales orders of magnitude larger than the diffusion length or the grain size. The preference to form patterns at these angles is a direct consequence of universal scattering properties at defects. The observed amplitude of the current direction fluctuations scales inversely to that expected from the relative thickness variations, the grain size and the defect concentration, all determined independently by standard methods. This indicates that ultracold atom magnetometry enables new insight into the interplay between disorder and transport.
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Submitted 4 February, 2008;
originally announced February 2008.
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Novel analog switching circuit for van der Pauw measurements
Authors:
T. David,
I. Molchadsky,
A. Somechi,
R. Rosenbaum
Abstract:
A simple electronic circuit is described using four common and very inexpensive analog multiplexer/demultiplexer chips. These analog switches are used to select eight different wiring configurations to a van der Pauw sample. Several interfacing schemes to a PC are suggested. The van der Pauw resistivity and Hall voltage expressions are also summarized.
A simple electronic circuit is described using four common and very inexpensive analog multiplexer/demultiplexer chips. These analog switches are used to select eight different wiring configurations to a van der Pauw sample. Several interfacing schemes to a PC are suggested. The van der Pauw resistivity and Hall voltage expressions are also summarized.
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Submitted 7 February, 2005;
originally announced February 2005.
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p-Type Sb-Doped ZnO Thin Films Prepared with Filtered Vacuum Arc Deposition
Authors:
T. David,
S. Goldsmith,
R. L. Boxman
Abstract:
Thin p-type Sb-doped ZnO films were grown by filtered vacuum arc deposition (FVAD), on untreated glass samples. The arc cathode was prepared by dissolving Sb into molten Zn. The deposition was performed with 200 A arc current, running for 120-240 s in 0.426 Pa oxygen pressure. The film thickness was 330-500 nm. The aotmic concentration of Sb in the films was ~1.5%, whereas the O/Zn atomic concen…
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Thin p-type Sb-doped ZnO films were grown by filtered vacuum arc deposition (FVAD), on untreated glass samples. The arc cathode was prepared by dissolving Sb into molten Zn. The deposition was performed with 200 A arc current, running for 120-240 s in 0.426 Pa oxygen pressure. The film thickness was 330-500 nm. The aotmic concentration of Sb in the films was ~1.5%, whereas the O/Zn atomic concentration ratio was ~0.7. Sb incorporation into the polycrystalline ZnO matrix was concluded from XRD analysis. The film resistivity (0.15-0.3 Ohm*m), carrier density (~10^22 m^(-3)), and carrier type, were determined by Hall effect measurements. The carrier mobility in the p-type films was in the range (10-20)*10^(-4) m^2/V*s. The energy gap of doped films, determined from optical tranmittance measurements, was approximately 3.39 eV.
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Submitted 5 February, 2005;
originally announced February 2005.
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Dependence of Zinc Oxide Thin Films Properties on Filtered Vacuum Arc Deposition Parameters
Authors:
T. David,
S. Goldsmith,
R. L. Boxman
Abstract:
The micro-properties (structure and composition), and macro-properties (electrical and optical properties) of zinc oxide (ZnO) thin films deposited on glass substrates using a filtere vacuum arc deposition (FVAD) system were investigated as a function of oxygen pressure (0.37 - 0.5 Pa) and arc current (100 - 300 A). Correlations between the various properties were investigated.
The micro-properties (structure and composition), and macro-properties (electrical and optical properties) of zinc oxide (ZnO) thin films deposited on glass substrates using a filtere vacuum arc deposition (FVAD) system were investigated as a function of oxygen pressure (0.37 - 0.5 Pa) and arc current (100 - 300 A). Correlations between the various properties were investigated.
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Submitted 17 January, 2005;
originally announced January 2005.
