Showing 1–9 of 9 results for author: Daudin, B

Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: the effect of stacking faults in the reduction of the internal electric field

Authors: J. A. Budagosky, N. Garro, A. Cros, A. García-Cristóbal, S. Founta, B. Daudin

Abstract: The optical emission of non-polar GaN/AlN quantum dots has been investigated. The presence of stacking faults inside these quantum dots is evidenced in the dependence of the photoluminescence with temperature and excitation power. A theoretical model for the electronic structure and optical properties of non-polar quantum dots, taking into account their realistic shapes, is presented which predict… ▽ More The optical emission of non-polar GaN/AlN quantum dots has been investigated. The presence of stacking faults inside these quantum dots is evidenced in the dependence of the photoluminescence with temperature and excitation power. A theoretical model for the electronic structure and optical properties of non-polar quantum dots, taking into account their realistic shapes, is presented which predicts a substantial reduction of the internal electric field but a persisting quantum confined Stark effect, comparable to that of polar GaN/AlN quantum dots. Modeling the effect of a 3 monolayer stacking fault inside the quantum dot, which acts as zinc-blende inclusion into the wurtzite matrix, results in an additional 30 % reduction of the internal electric field and gives a better account of the observed optical features. △ Less

Submitted 19 January, 2016; originally announced January 2016.

Comments: 5 pages, 4 figures, preprint submitted to Material Science in Semiconductor Processing

Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires

Authors: Gilles Nogues, Thomas Auzelle, Martien Den Hertog, Bruno Gayral, Bruno Daudin

Abstract: We perform correlated studies of individual GaN nanowires in scanning electron microscopy combined to low temperature cathodoluminescence, microphotoluminescence, and scanning transmission electron microscopy. We show that some nanowires exhibit well localized regions emitting light at the energy of a stacking fault bound exciton (3.42 eV) and are able to observe the presence of a single stacking… ▽ More We perform correlated studies of individual GaN nanowires in scanning electron microscopy combined to low temperature cathodoluminescence, microphotoluminescence, and scanning transmission electron microscopy. We show that some nanowires exhibit well localized regions emitting light at the energy of a stacking fault bound exciton (3.42 eV) and are able to observe the presence of a single stacking fault in these regions. Precise measurements of the cathodoluminescence signal in the vicinity of the stacking fault give access to the exciton diffusion length near this location. △ Less

Submitted 16 March, 2014; originally announced March 2014.

Journal ref: Applied Physics Letters 104 (2014) 102102

Temperature insensitive optical alignment of the exciton in nanowire embedded GaN Quantum Dots

Authors: A. Balocchi, J. Renard, C. T. Nguyen, B. Gayral, T. Amand, H. Mariette, B. Daudin, G. Tourbot, X. Marie

Abstract: We report on the exciton spin dynamics of nanowire embedded GaN/AlN Quantum Dots (QDs) investigated by time-resolved photoluminescence spectroscopy. Under a linearly polarized quasiresonant excitation we evidence the quenching of the exciton spin relaxation and a temperature insensitive degree of the exciton linear polarization, demonstrating the robustness of the optical alignment of the exciton… ▽ More We report on the exciton spin dynamics of nanowire embedded GaN/AlN Quantum Dots (QDs) investigated by time-resolved photoluminescence spectroscopy. Under a linearly polarized quasiresonant excitation we evidence the quenching of the exciton spin relaxation and a temperature insensitive degree of the exciton linear polarization, demonstrating the robustness of the optical alignment of the exciton spin in these nanowire embedded QDs. A detailed examination of the luminescence polarization angular dependence shows orthogonal linear exciton eigenstates with no preferential crystallographic orientation. △ Less

Submitted 28 July, 2011; originally announced July 2011.

Comments: 13 pages, 5 figures

Probing exciton localization in non-polar GaN/AlN Quantum Dots by single dot optical spectroscopy

Authors: F. Rol, S. Founta, H. Mariette, B. Daudin, Le Si Dang, J. Bleuse, D. Peyrade, J. -M. Gerard, B. Gayral

Abstract: We present an optical spectroscopy study of non-polar GaN/AlN quantum dots by time-resolved photoluminescence and by microphotoluminescence. Isolated quantum dots exhibit sharp emission lines, with linewidths in the 0.5-2 meV range due to spectral diffusion. Such linewidths are narrow enough to probe the inelastic coupling of acoustic phonons to confined carriers as a function of temperature. Th… ▽ More We present an optical spectroscopy study of non-polar GaN/AlN quantum dots by time-resolved photoluminescence and by microphotoluminescence. Isolated quantum dots exhibit sharp emission lines, with linewidths in the 0.5-2 meV range due to spectral diffusion. Such linewidths are narrow enough to probe the inelastic coupling of acoustic phonons to confined carriers as a function of temperature. This study indicates that the carriers are laterally localized on a scale that is much smaller than the quantum dot size. This conclusion is further confirmed by the analysis of the decay time of the luminescence. △ Less

Submitted 24 November, 2006; originally announced November 2006.

Step by step capping and strain state of GaN/AlN quantum dots studied by grazing incidence diffraction anomalous fine structure

Authors: J. Coraux, V. Favre-Nicolin, H. Renevier, M. G. Proietti, B. Daudin

Abstract: The investigation of small size embedded nanostructures, by a combination of complementary anomalous diffraction techniques, is reported. GaN Quantum Dots (QDs), grown by molecular beam epitaxy in a modified Stranski-Krastanow mode, are studied in terms of strain and local environment, as a function of the AlN cap layer thickness, by means of grazing incidence anomalous diffraction. That is, the… ▽ More The investigation of small size embedded nanostructures, by a combination of complementary anomalous diffraction techniques, is reported. GaN Quantum Dots (QDs), grown by molecular beam epitaxy in a modified Stranski-Krastanow mode, are studied in terms of strain and local environment, as a function of the AlN cap layer thickness, by means of grazing incidence anomalous diffraction. That is, the X-ray photons energy is tuned across the Ga absorption K-edge which makes diffraction chemically selective. Measurement of \textit{hkl}-scans, close to the AlN (30-30) Bragg reflection, at several energies across the Ga K-edge, allows the extraction of the Ga partial structure factor, from which the in-plane strain of GaN QDs is deduced. From the fixed-Q energy-dependent diffracted intensity spectra, measured for diffraction-selected iso-strain regions corresponding to the average in-plane strain state of the QDs, quantitative information regarding composition and the out-of-plane strain has been obtained. We recover the in-plane and out-of-plane strains in the dots. The comparison to the biaxial elastic strain in a pseudomorphic layer indicates a tendency to an over-strained regime. △ Less

Submitted 6 December, 2005; v1 submitted 1 September, 2005; originally announced September 2005.

Comments: submitted to PRB

In situ resonant x-ray study of vertical correlation and capping e ects during GaN/AlN quantum dots growth

Authors: J. Coraux, H. Renevier, V. Favre-Nicolin, G. Renaud, B. Daudin

Abstract: Grazing incidence anomalous x-ray scattering was used to monitor in situ the molecular beam epitaxy growth of GaN/AlN quantum dots (QDs). The strain state was studied by means of grazing incidence Multi-wavelength Anomalous Di raction (MAD) in both the QDs and the AlN during the progressive coverage of QDs by AlN monolayers. Vertical correlation in the position of the GaN QDs was also studied by… ▽ More Grazing incidence anomalous x-ray scattering was used to monitor in situ the molecular beam epitaxy growth of GaN/AlN quantum dots (QDs). The strain state was studied by means of grazing incidence Multi-wavelength Anomalous Di raction (MAD) in both the QDs and the AlN during the progressive coverage of QDs by AlN monolayers. Vertical correlation in the position of the GaN QDs was also studied by both grazing incidence MAD and anomalous Grazing Incidence Small Angle Scattering (GISAXS) as a function of the number of GaN planes and of the AlN spacer thickness. In a regime where the GaN QDs and the AlN capping are mutually strain influenced, a vertical correlation in the position of QDs is found with as a side-e ect an average increase in the QDs width. △ Less

Submitted 4 August, 2005; originally announced August 2005.

Comments: 3 pages, 4 figures, submitted to Appl. Phys. Lett

Nucleation and Growth of GaN/AlN Quantum Dots

Authors: C. Adelmann, B. Daudin, R. A. Oliver, G. A. D. Briggs, R. E. Rudd

Abstract: We study the nucleation of GaN islands grown by plasma-assisted molecular-beam epitaxy on AlN(0001) in a Stranski-Krastanov mode. In particular, we assess the variation of their height and density as a function of GaN coverage. We show that the GaN growth passes four stages: initially, the growth is layer-by-layer; subsequently, two-dimensional precursor islands form, which transform into genuin… ▽ More We study the nucleation of GaN islands grown by plasma-assisted molecular-beam epitaxy on AlN(0001) in a Stranski-Krastanov mode. In particular, we assess the variation of their height and density as a function of GaN coverage. We show that the GaN growth passes four stages: initially, the growth is layer-by-layer; subsequently, two-dimensional precursor islands form, which transform into genuine three-dimensional islands. During the latter stage, island height and density increase with GaN coverage until the density saturates. During further GaN growth, the density remains constant and a bimodal height distribution appears. The variation of island height and density as a function of substrate temperature is discussed in the framework of an equilibrium model for Stranski-Krastanov growth. △ Less

Submitted 3 November, 2003; originally announced November 2003.

Comments: Submitted to PRB, 10 pages, 15 figures

Journal ref: Phys. Rev. B 70, 125427 (2004)

Gallium adsorption on (0001) GaN surfaces

Authors: C. Adelmann, J. Brault, G. Mula, B. Daudin, L. Lymperakis, J. Neugebauer

Abstract: We study the adsorption behavior of Ga on (0001) GaN surfaces combining experimental specular reflection high-energy electron diffraction with theoretical investigations in the framework of a kinetic model for adsorption and ab initio calculations of energy parameters. The measurement of a Ga/GaN adsorption isotherm allows the quantification of the equilibrium Ga surface coverage as a function o… ▽ More We study the adsorption behavior of Ga on (0001) GaN surfaces combining experimental specular reflection high-energy electron diffraction with theoretical investigations in the framework of a kinetic model for adsorption and ab initio calculations of energy parameters. The measurement of a Ga/GaN adsorption isotherm allows the quantification of the equilibrium Ga surface coverage as a function of the impinging Ga flux. The temperature dependence is discussed within an {\em ab initio} based growth model for adsorption taking into account the nucleation of Ga clusters. △ Less

Submitted 7 April, 2003; originally announced April 2003.

Comments: 9 pages, 10 figures

Growth and optical properties of GaN/AlN quantum wells

Authors: C. Adelmann, E. Sarigiannidou, D. Jalabert, Y. Hori, J. -L. Rouviere, B. Daudin, S. Fanget, C. Bru-Chevallier, T. Shibata, M. Tanaka

Abstract: We demonstrate the growth of GaN/AlN quantum well structures by plasma-assisted molecular-beam epitaxy by taking advantage of the surfactant effect of Ga. The GaN/AlN quantum wells show photoluminescence emission with photon energies in the range between 4.2 and 2.3 eV for well widths between 0.7 and 2.6 nm, respectively. An internal electric field strength of $9.2\pm 1.0$ MV/cm is deduced from… ▽ More We demonstrate the growth of GaN/AlN quantum well structures by plasma-assisted molecular-beam epitaxy by taking advantage of the surfactant effect of Ga. The GaN/AlN quantum wells show photoluminescence emission with photon energies in the range between 4.2 and 2.3 eV for well widths between 0.7 and 2.6 nm, respectively. An internal electric field strength of $9.2\pm 1.0$ MV/cm is deduced from the dependence of the emission energy on the well width. △ Less

Submitted 4 April, 2003; originally announced April 2003.

Comments: Submitted to APL