Showing 1–6 of 6 results for author: Daubriac, R

Impact of impurities on leakage current induced by High-Energy Density Pulsed Laser Annealing in Si diodes

Authors: Richard Monflier, Richard Daubriac, Mahmoud Haned, Toshiyuki Tabata, François Olivier, Eric Imbernon, Markus Italia, Antonino La Magna, Fulvio Mazzamuto, Simona Boninelli, Fuccio Cristiano, Elena Bedel Pereira

Abstract: For semiconductor device fabrication, Pulsed Laser Annealing (PLA) offers significant advantages over conventional thermal processes. Notably, it can provide ultrafast (~ns) and high temperature profiles ($>1000^\circ$C). When the maximum temperature exceeds the melting point, a solid-liquid phase transition is observed, immediately followed by rapid recrystallization. This unique annealing mechan… ▽ More For semiconductor device fabrication, Pulsed Laser Annealing (PLA) offers significant advantages over conventional thermal processes. Notably, it can provide ultrafast (~ns) and high temperature profiles ($>1000^\circ$C). When the maximum temperature exceeds the melting point, a solid-liquid phase transition is observed, immediately followed by rapid recrystallization. This unique annealing mechanism gives raises questions about dopant diffusion and residual defects, in not only in the recrystallized region, but also just below it. As power devices require micrometer-sized junctions, high laser energy densities are needed, which were proved to promote the incorporation of complex impurities from the surface and the creation of defects at the liquid/solid interface. This paper reports on the impact of laser annealing at high energy densities (up to 8.0 J/cm$^2$) on the leakage current, using Schottky and PN diodes, and DLTS measurements. Various laser annealing conditions were used: energy densities between 1.7 and 8.0 J/cm$^2$ with 1 to 10 pulses. Our results suggest that the liquid and solid solubility of vacancies in silicon are fixed by the maximum temperature reached, so to the energy density. Increasing the number of laser pulses allows, not only to reach this maximum vacancy concentration but also to promote their diffusion towards the surface. Concomitantly, the in-diffusion of complex impurities inside the melted region allows the coupling between both defect types to create trap centers, responsible for the degradation of the leakage current. △ Less

Submitted 13 January, 2025; originally announced January 2025.

Nanosecond Laser Annealing: impact on superconducting Silicon on Insulator epilayers

Authors: Y. Baron, J. L. Lábár, S. Lequien, B. Pécz, R. Daubriac, S. Kerdilés, P. Acosta ALba, C. Marcenat, D. Débarre, F. Lefloch, F. Chiodi

Abstract: We present superconducting monocrystalline Silicon On Insulator thin 33 nm epilayers. They are obtained by nanosecond laser annealing under ultra-high vacuum on 300 mm wafers heavily pre-implantated with boron ($2.5\times \,10^{16}\, at/cm^2$, 3 keV). Superconductivity is discussed in relation to the structural, electrical and material properties, a step towards the integration of ultra-doped supe… ▽ More We present superconducting monocrystalline Silicon On Insulator thin 33 nm epilayers. They are obtained by nanosecond laser annealing under ultra-high vacuum on 300 mm wafers heavily pre-implantated with boron ($2.5\times \,10^{16}\, at/cm^2$, 3 keV). Superconductivity is discussed in relation to the structural, electrical and material properties, a step towards the integration of ultra-doped superconducting Si at large scale. In particular, we highlight the effect of the nanosecond laser annealing energy and the impact of multiple laser anneals. Increasing the energy leads to a linear increase of the layer thickness, and to the increase of the superconducting critical temperature $T_c$ from zero ($<35\, mK$) to $0.5\,K$. This value is comparable to superconducting Si layers realised by Gas Immersion Laser Doping where the dopants are incorporated without introducing the deep defects associated to implantation. Superconductivity only appears when the annealed depth is larger than the initial amorphous layer induced by the boron implantation. The number of subsequent anneals results in a more homogeneous doping with reduced amount of structural defects and increased conductivity. The quantitative analysis of $T_c$ concludes on a superconducting/ non superconducting bilayer, with an extremely low resistance interface. This highlights the possibility to couple efficiently superconducting Si to Si channels. △ Less

Submitted 25 June, 2024; originally announced June 2024.

Large-Scale Epitaxial Integration of Single-Crystalline BiSb Topological Insulator on GaAs (111)A

Authors: Mohamed Ali Khaled, Leonardo Cancellara, Salima Fekraoui, Richard Daubriac, François Bertran, Chiara Bigi, Quentin Gravelier, Richard Monflier, Alexandre Arnoult, Corentin Durand, Sébastien Plissard

Abstract: Topological insulators (TI) are promising materials for future spintronics applications and their epitaxial integration would allow the realization of new hybrid interfaces. As the first materials studied, Bismuth Antimony alloys (Bi1-xSbx) show great potential due to their tuneable electronic band structure and efficient charge-to-spin conversion. Here, we report the growth of Bi1-xSbx thin films… ▽ More Topological insulators (TI) are promising materials for future spintronics applications and their epitaxial integration would allow the realization of new hybrid interfaces. As the first materials studied, Bismuth Antimony alloys (Bi1-xSbx) show great potential due to their tuneable electronic band structure and efficient charge-to-spin conversion. Here, we report the growth of Bi1-xSbx thin films on GaAs (111)A substrates following two different protocols. For the conventional epitaxy process, the grown films show excellent crystallinity and twin domains corresponding to an in-plane 180{\textdegree} rotation of the crystalline structure. Domain walls are found to be composition-dependent and have a lower density for Antimony-rich films. For the optimized process, depositing an Antimony bilayer prior to BiSb growth allows achieving single crystallinity of the TI films. The topologically protected surface states are evidenced by ex-situ ARPES measurements for domains-free and conventional films. To the best of our knowledge, this work presents the first large-scale epitaxial integration of single crystalline Bi1-xSbx thin films on industrial substrates. △ Less

Submitted 23 May, 2024; originally announced May 2024.

Comments: ACS Applied Electronic Materials, 2024

Laser Annealed SiO2/Si1-xGex Scaffolds for Nanoscaled Devices, Synergy of Experiment and Computation

Authors: Damiano Ricciarelli, Jonas Müller, Guilhem Larrieu, Ioannis Deretzis, Gaetano Calogero, Enrico Martello, Giuseppe Fisicaro, Jean-Michel Hartmann, Sébastien Kerdilès, Mathieu Opprecht, Antonio Massimiliano Mio, Richard Daubriac, Fuccio Cristiano, Antonino La Magna

Abstract: Ultraviolet nanosecond laser annealing (UV-NLA) proves to be an important technique, particularly when tightly controlled heating and melting are necessary. In the realm of semiconductor technologies, the significance of nanosecond laser annealing (NLA) grows in tandem with the escalating intricacy of integration schemes in nano-scaled devices. Silicon-germanium alloys have been studied for decade… ▽ More Ultraviolet nanosecond laser annealing (UV-NLA) proves to be an important technique, particularly when tightly controlled heating and melting are necessary. In the realm of semiconductor technologies, the significance of nanosecond laser annealing (NLA) grows in tandem with the escalating intricacy of integration schemes in nano-scaled devices. Silicon-germanium alloys have been studied for decades for their compatibility with silicon devices. Indeed, they enable the manipulation of properties like strain, carrier mobilities and bandgap. In this framework, they can for instance boost the performances of p-type MOSFETs but also enable near infra-red absorption and emission for applications in photo-detection and photonics. Laser melting on such type of layers, however results, up to now, in the development of extended defects and poor control over layer morphology and homogeneity. In our study, we investigate the laser melting of ~700 nm thick relaxed silicon-germanium samples coated with SiO2 nano-arrays, observing the resulting material to maintain an unaltered lattice. We found the geometrical parameters of the silicon oxide having an impact on the thermal budget samples see, influencing melt threshold, melt depth and germanium distribution. △ Less

Submitted 6 May, 2024; v1 submitted 18 March, 2024; originally announced March 2024.

Atomistic insights into ultrafast SiGe nanoprocessing

Authors: Gaetano Calogero, Domenica Raciti, Damiano Ricciarelli, Pablo Acosta-Alba, Fuccio Cristiano, Richard Daubriac, Remi Demoulin, Ioannis Deretzis, Giuseppe Fisicaro, Jean-Michel Hartmann, Sébastien Kerdilès, Antonino La Magna

Abstract: Controlling ultrafast material transformations with atomic precision is essential for future nanotechnology. Pulsed laser annealing (LA), inducing extremely rapid and localized phase transitions, is a powerful way to achieve this, but it requires careful optimization together with the appropriate system design. We present a multiscale LA computational framework able to simulate atom-by-atom the hi… ▽ More Controlling ultrafast material transformations with atomic precision is essential for future nanotechnology. Pulsed laser annealing (LA), inducing extremely rapid and localized phase transitions, is a powerful way to achieve this, but it requires careful optimization together with the appropriate system design. We present a multiscale LA computational framework able to simulate atom-by-atom the highly out-of-equilibrium kinetics of a material as it interacts with the laser, including effects of structural disorder. By seamlessly coupling a macroscale continuum solver to a nanoscale super-lattice Kinetic Monte Carlo code, this method overcomes the limits of state-of-the-art continuum-based tools. We exploit it to investigate nontrivial changes in composition, morphology and quality of laser-annealed SiGe alloys. Validations against experiments and phase-field simulations, as well as advanced applications to strained, defected, nanostructured and confined SiGe are presented, highlighting the importance of a multiscale atomistic-continuum approach. Current applicability and potential generalization routes are finally discussed. △ Less

Submitted 6 September, 2023; originally announced September 2023.

Impact of surface reflectivity on the ultra-fast laser melting of silicon-germanium alloys

Authors: Damiano Ricciarelli, Giovanni Mannino, Ioannis Deretzis, Gaetano Calogero, Giuseppe Fisicaro, Richard Daubriac, Remi Demoulin, Fuccio Cristiano, Pawel P. Michalowski, Pablo Acosta-Alba, Jean-Michel Hartmann, Sébastien Kerdilès, Antonino La Magna

Abstract: Ultraviolet nanosecond laser annealing (LA) is a powerful tool where strongly confined heating and melting are desirable. In semiconductor technologies the importance of LA increases with the increasing complexity of the proposed integration schemes. Optimizing the LA process along with the experimental design is challenging, especially when complex 3D nanostructured systems with various shapes an… ▽ More Ultraviolet nanosecond laser annealing (LA) is a powerful tool where strongly confined heating and melting are desirable. In semiconductor technologies the importance of LA increases with the increasing complexity of the proposed integration schemes. Optimizing the LA process along with the experimental design is challenging, especially when complex 3D nanostructured systems with various shapes and phases are involved. Within this context, reliable simulations of laser melting are required for optimizing the process parameters while reducing the number of experimental tests. This gives rise to a virtual Design of Experiments (DoE). $Si_{1-x}Ge_{x}$ alloys are nowadays used for their compatibility with silicon devices enabling to engineer properties such as strain, carrier mobilities and bandgap. In this work, the laser melting process of relaxed and strained $Si_{1-x}Ge_{x}$ is simulated with a finite element method / phase field approach. Particularly, we calibrated the dielectric functions of the alloy for its crystalline and liquid phase using experimental data. We highlighted the importance of reproducing the exact reflectivity of the interface between air and the material in its different aggregation states, to correctly mimic the process. We indirectly discovered intriguing features on the optical behavior of melt silicon-germanium. △ Less

Submitted 8 September, 2023; v1 submitted 28 March, 2023; originally announced March 2023.

Journal ref: Mat. Sci. Semicond. Proc. 165 (2023) 10765