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Charge Ordering in out-of-plane Boron Doped Reduced Graphene Oxide
Authors:
Saikat Sarkar,
Rajarshi Roy,
Bikram Kumar Das,
Suman Chatterjee,
Kalyan Kumar Chattopadhyay
Abstract:
Symmetry-breaking phase transitions analogous to superconductivity (SC), charge ordering (CO) etc. in metal-intercalated graphene are favorable resulting from modified electronic and phonon band structures. Strong carrier-lattice interaction evolved from the out-of-plane soft vibrations with accumulation of charges at the out-of-plane region, can set a favorable environment for CO in graphene syst…
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Symmetry-breaking phase transitions analogous to superconductivity (SC), charge ordering (CO) etc. in metal-intercalated graphene are favorable resulting from modified electronic and phonon band structures. Strong carrier-lattice interaction evolved from the out-of-plane soft vibrations with accumulation of charges at the out-of-plane region, can set a favorable environment for CO in graphene system. Here, we employ boron-doped reduced graphene oxide (BG) to acquire charge-ordered state above a transition temperature, T1~97.5 K. Signatures of this state are identified using ab-initio simulations and low temperature electrical transport measurements. The out-of-plane boron groups play a crucial role in reinforcing the electron-phonon coupling (EPC) allowing an ordered-state transition. Temperature-dependent Raman spectroscopy further supports the emergence of ordering. Key characterization techniques (X-ray diffraction, Raman spectra etc.) are used to quantify the EPC interaction and associated factors like tensile strain, boundary defects, etc. affecting charge ordering with doping. Additionally, we find interesting electric field dependency on the CO in this non-metallic, light-atom-doped chemically derived graphene.
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Submitted 11 June, 2025;
originally announced June 2025.
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Generating discrete time crystals through optimal control
Authors:
Mrutyunjaya Sahoo,
Rahul Ghosh,
Bandita Das,
Shishira Mahunta,
Bodhaditya Santra,
Victor Mukherjee
Abstract:
In this work we use optimal control to generate Discrete Time Crystals (DTC) in generic many-body quantum systems. We define appropriate cost functions, which, when optimized, result in the formation of DTCs. This hitherto unexplored method represents DTCs as an optimization problem, and allows us to find non-trivial realistic periodic control pulses and parameter regimes which result in spontaneo…
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In this work we use optimal control to generate Discrete Time Crystals (DTC) in generic many-body quantum systems. We define appropriate cost functions, which, when optimized, result in the formation of DTCs. This hitherto unexplored method represents DTCs as an optimization problem, and allows us to find non-trivial realistic periodic control pulses and parameter regimes which result in spontaneous breaking of time-translational symmetry in quantum systems. We exemplify our approach using many-body quantum systems in the presence, as well as absence of dissipation. We also discuss possible experimental realization of the control protocol for generating DTCs.
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Submitted 28 May, 2025;
originally announced May 2025.
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Unravelling the Flow of Information in a Nonequilibrium Process
Authors:
Biswajit Das,
Sreekanth K Manikandan,
Ayan Banerjee
Abstract:
Identifying the origin of nonequilibrium characteristics in a generic interacting system having multiple degrees of freedom is a challenging task. In this context, information theoretic measures such as mutual information and related polymorphs offer valuable insights. Here, we explore these measures in a minimal experimental model consisting of two hydrodynamically coupled colloidal particles, wh…
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Identifying the origin of nonequilibrium characteristics in a generic interacting system having multiple degrees of freedom is a challenging task. In this context, information theoretic measures such as mutual information and related polymorphs offer valuable insights. Here, we explore these measures in a minimal experimental model consisting of two hydrodynamically coupled colloidal particles, where a nonequilibrium drive is introduced via an exponentially correlated noise acting on one of the particles. We show that the information-theoretic tools considered enable a systematic, data-driven dissection of information flow within the system. These measures allow us to identify the driving node and reconstruct the directional dependencies between particles. Notably, they help explain a recently observed, counterintuitive trend in the dependence of irreversibility on interaction strength under coarse-graining (B. Das et.al., arXiv:2405.00800 (2024)). Finally, our results demonstrate how directional information measures can uncover the hidden structure of nonequilibrium dynamics and provide a framework for studying similar effects in more complex systems.
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Submitted 14 April, 2025;
originally announced April 2025.
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Localizing entropy production along non-equilibrium trajectories
Authors:
Biswajit Das,
Sreekanth K Manikandan
Abstract:
An important open problem in nonequilibrium thermodynamics is the quantification and spatiotemporal localization of entropy production in complex nanoscale processes from experimental data. Here we address this issue through a data-driven approach that combines the recently developed short-time thermodynamic uncertainty relation based inference scheme with machine learning techniques. Our approach…
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An important open problem in nonequilibrium thermodynamics is the quantification and spatiotemporal localization of entropy production in complex nanoscale processes from experimental data. Here we address this issue through a data-driven approach that combines the recently developed short-time thermodynamic uncertainty relation based inference scheme with machine learning techniques. Our approach leverages the flexible function representation provided by deep neural networks to achieve accurate reconstruction of high-dimensional, potentially time-dependent dissipative force fields as well as the localization of entropy production in both space and time along nonequilibrium trajectories. We demonstrate the versatility of the framework through applications to diverse systems of fundamental interest and experimental significance, where it successfully addresses distinct challenges in localizing entropy production.
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Submitted 26 March, 2025;
originally announced March 2025.
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Atomic Origins of Magnetic Anisotropy in Ru-substituted Manganite Films
Authors:
Brajagopal Das,
Cinthia Piamonteze,
Lior Kornblum
Abstract:
Magnetic anisotropy in complex oxides often originates from the complex interplay of several factors, including crystal structure, spin-orbit coupling, and electronic interactions. Recent studies on Ru-substituted $La_{0.70}Sr_{0.30}MnO_3$ (Ru-LSMO) films demonstrate emerging magnetic and magneto-transport properties, where magnetic anisotropy plays a crucial role. However, the atomic origin and u…
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Magnetic anisotropy in complex oxides often originates from the complex interplay of several factors, including crystal structure, spin-orbit coupling, and electronic interactions. Recent studies on Ru-substituted $La_{0.70}Sr_{0.30}MnO_3$ (Ru-LSMO) films demonstrate emerging magnetic and magneto-transport properties, where magnetic anisotropy plays a crucial role. However, the atomic origin and underlying mechanisms of the magnetic anisotropy of this material system remain elusive. This work sheds light on these aspects. Detailed element-specific X-ray magnetic dichroism analysis suggests that Ru single ion anisotropy governs the overall magnetic anisotropy. Furthermore, the magnetic property of Mn ions changes dramatically due to strong antiferromagnetic coupling between Ru and Mn ions. Our findings clarify the role of Ru single ion anisotropy behind magnetic anisotropy in Ru-LSMO, offering a promising avenue for designing advanced materials with tailored magnetic properties for next generation magnetic and spintronic technologies. As the Curie temperature of these materials is close to room temperature, such tunable magnetic anisotropy holds prospects for functional room-temperature magnetic devices.
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Submitted 11 April, 2025; v1 submitted 20 March, 2025;
originally announced March 2025.
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Simultaneous active and diffusive behaviour of asymmetric microclusters in a photophoretic trap
Authors:
Anita Pahi,
Kirty Ranjan Sahoo,
Biswajit Das,
Shuvojit Paul,
Ayan Banerjee
Abstract:
Active and diffusive motion in Brownian particles are regularly observed in fluidic environments, albeit at different time scales. Here, we experimentally study the dynamics of highly asymmetric microclusters trapped in air employing photophoretic forces generated from a loosely focused laser beam, where the trapped particles display active and diffusive dynamics simultaneously in orthogonal spati…
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Active and diffusive motion in Brownian particles are regularly observed in fluidic environments, albeit at different time scales. Here, we experimentally study the dynamics of highly asymmetric microclusters trapped in air employing photophoretic forces generated from a loosely focused laser beam, where the trapped particles display active and diffusive dynamics simultaneously in orthogonal spatial directions. Thus, particle motion in the longitudinal direction ($z$) is enslaved to irregular kicks that naturally arise from an interplay of gravitational and photophoretic forces. This leads to a bimodal nature of the probability distribution function with a near-ballistic scaling of mean-squared displacement in the $z$ direction demonstrating active like dynamics, while the dynamics along the transverse ($x$) direction displays diffusive behaviour with a strong dependence on the motion along $z$. To explain these unique characteristics, we developed a 2D-Langevin model of a confined elliptic particle experiencing an additional stochastic force along $z$ to account for the arbitrary jumps. The numerical results show excellent qualitative agreement with the experimental observations. Our findings should pave the way for the design of high-efficiency Brownian engines in air, besides stimulating new research in the emerging field of photophoretic trapping.
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Submitted 31 March, 2025; v1 submitted 20 March, 2025;
originally announced March 2025.
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Applications of the Quantum Phase Difference Estimation Algorithm to the Excitation Energies in Spin Systems on a NISQ Device
Authors:
Boni Paul,
Sudhindu Bikash Mandal,
Kenji Sugisaki,
B. P. Das
Abstract:
The Quantum Phase Difference Estimation (QPDE) algorithm, as an extension of the Quantum Phase Estimation (QPE), is a quantum algorithm designed to compute the differences of two eigenvalues of a unitary operator by exploiting the quantum superposition of two eigenstates. Unlike QPE, QPDE is free of controlled-unitary operations, and is suitable for calculations on noisy intermediate-scale quantum…
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The Quantum Phase Difference Estimation (QPDE) algorithm, as an extension of the Quantum Phase Estimation (QPE), is a quantum algorithm designed to compute the differences of two eigenvalues of a unitary operator by exploiting the quantum superposition of two eigenstates. Unlike QPE, QPDE is free of controlled-unitary operations, and is suitable for calculations on noisy intermediate-scale quantum (NISQ) devices. We present the implementation and verification of a novel early fault-tolerant QPDE algorithm for determining energy gaps across diverse spin system configurations using NISQ devices. The algorithm is applied to the systems described by two and three-spin Heisenberg Hamiltonians with different geometric arrangements and coupling strengths, including symmetric, asymmetric, spin-frustrated, and non-frustrated configurations. By leveraging the match gate-like structure of the time evolution operator of Heisenberg Hamiltonian, we achieve constant-depth quantum circuits suitable for NISQ hardware implementation. Our results on IBM quantum processors show remarkable accuracy ranging from 85\% to 93\%, demonstrating excellent agreement with classical calculations even in the presence of hardware noise. The methodology incorporates sophisticated quantum noise suppression techniques, including Pauli Twirling and Dynamical Decoupling, and employs an adaptive framework. Our findings demonstrate the practical viability of the QPDE algorithm for quantum many-body simulations on current NISQ hardware, establishing a robust framework for future applications.
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Submitted 27 February, 2025;
originally announced February 2025.
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Magnetodielectric Properties in Two Dimensional Magnetic Insulators
Authors:
Koushik Dey,
Hasina Khatun,
Anudeepa Ghosh,
Soumik Das,
Bikash Das,
Subhadeep Datta
Abstract:
Magnetodielectric (MD) materials are important for their ability to spin-charge conversion, magnetic field control of electric polarization and vice versa. Among these, two-dimensional (2D) van der Waals (vdW) magnetic materials are of particular interest due to the presence of magnetic anisotropy (MA) originating from the interaction between the magnetic moments and the crystal field. Also, these…
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Magnetodielectric (MD) materials are important for their ability to spin-charge conversion, magnetic field control of electric polarization and vice versa. Among these, two-dimensional (2D) van der Waals (vdW) magnetic materials are of particular interest due to the presence of magnetic anisotropy (MA) originating from the interaction between the magnetic moments and the crystal field. Also, these materials indicate a high degree of stability in the long-range spin order and may be described using suitable spin Hamiltonians of the Heisenberg, XY, or Ising type. Recent reports have suggested effective interactions between magnetization and electric polarization in 2D magnets. However, MD coupling studies on layered magnetic materials are still few. This review covers the fundamentals of magnetodielectric coupling by explaining related key terms. It includes the necessary conditions for having this coupling and sheds light on the possible physical mechanisms behind this coupling starting from phenomenological descriptions. Apart from that, this review classifies 2D magnetic materials into several categories for reaching out each and every class of materials. Additionally, this review summarizes recent advancements of some pioneer 2D magnetodielectric materials. Last but not the least, the current review provides possible research directions for enhancing magnetodielectric coupling in those and mentions the possibilities for future developments.
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Submitted 25 February, 2025;
originally announced February 2025.
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Decoding active force fluctuations from spatial trajectories of active systems
Authors:
Anisha Majhi,
Biswajit Das,
Subhadeep Gupta,
Anand Dev Ranjan,
Amirul Islam Mallick,
Shuvojit Paul,
Ayan Banerjee
Abstract:
Mesoscopic active systems exhibit various unique behaviours - absent in passive systems - due to the forces generated by the corresponding constituents by converting their available free energies. However, estimating these forces - which are also stochastic and remain intertwined with the thermal noise - is especially non-trivial. Here, we introduce a technique to extract such fluctuating active f…
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Mesoscopic active systems exhibit various unique behaviours - absent in passive systems - due to the forces generated by the corresponding constituents by converting their available free energies. However, estimating these forces - which are also stochastic and remain intertwined with the thermal noise - is especially non-trivial. Here, we introduce a technique to extract such fluctuating active forces acting on a passive particle immersed in an active bath with high statistical accuracy by filtering out the related thermal noise. We first test the efficacy of our method under numerical scenarios with different types of activity, and then apply it to the experimental trajectories of a microscopic particle (optically) trapped inside an active bath consisting of motile \textit{E.Coli.} bacteria. We believe that our simple yet powerful approach, which appears agnostic to the nature of the active force, should enable accurate measurement of force dynamics in living matter and potentially allow direct but reliable estimation of key thermodynamic parameters such as heat, work, and entropy production.
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Submitted 2 May, 2025; v1 submitted 4 January, 2025;
originally announced January 2025.
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Tailored 1D/2D Van der Waals Heterostructures for Unified Analog and Digital Electronics
Authors:
Bipul Karmakar,
Bikash Das,
Shibnath Mandal,
Rahul Paramanik,
Sujan Maity,
Tanima Kundu,
Soumik Das,
Mainak Palit,
Koushik Dey,
Kapildeb Dolui,
Subhadeep Datta
Abstract:
We report a sequential two-step vapor deposition process for growing mixed-dimensional van der Waals (vdW) materials, specifically Te nanowires (1D) and MoS$_2$ (2D), on a single SiO$_2$ wafer. Our growth technique offers a unique potential pathway to create large scale, high-quality, defect-free interfaces. The assembly of samples serves a twofold application: first, the as-prepared heterostructu…
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We report a sequential two-step vapor deposition process for growing mixed-dimensional van der Waals (vdW) materials, specifically Te nanowires (1D) and MoS$_2$ (2D), on a single SiO$_2$ wafer. Our growth technique offers a unique potential pathway to create large scale, high-quality, defect-free interfaces. The assembly of samples serves a twofold application: first, the as-prepared heterostructures (Te NW/MoS$_2$) provide insights into the atomically thin depletion region of a 1D/2D vdW diode, as revealed by electrical transport measurements and density functional theory-based quantum transport calculations. The charge transfer at the heterointerface is confirmed using Raman spectroscopy and Kelvin probe force microscopy (KPFM). We also observe modulation of the rectification ratio with varying applied gate voltage. Second, the non-hybrid regions on the substrate, consisting of the as-grown individual Te nanowires and MoS$_2$ microstructures, are utilized to fabricate separate p- and n-FETs, respectively. Furthermore, the ionic liquid gating helps to realize low-power CMOS inverter and all basic logic gate operations using a pair of n- and p- field-effect transistors (FETs) on Si/SiO$_2$ platform. This approach also demonstrates the potential for unifying diode and CMOS circuits on a single platform, opening opportunities for integrated analog and digital electronics.
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Submitted 12 December, 2024;
originally announced December 2024.
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A Self-Supervised Robotic System for Autonomous Contact-Based Spatial Mapping of Semiconductor Properties
Authors:
Alexander E. Siemenn,
Basita Das,
Kangyu Ji,
Fang Sheng,
Tonio Buonassisi
Abstract:
Integrating robotically driven contact-based material characterization techniques into self-driving laboratories can enhance measurement quality, reliability, and throughput. While deep learning models support robust autonomy, current methods lack reliable pixel-precision positioning and require extensive labeled data. To overcome these challenges, we propose an approach for building self-supervis…
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Integrating robotically driven contact-based material characterization techniques into self-driving laboratories can enhance measurement quality, reliability, and throughput. While deep learning models support robust autonomy, current methods lack reliable pixel-precision positioning and require extensive labeled data. To overcome these challenges, we propose an approach for building self-supervised autonomy into contact-based robotic systems that teach the robot to follow domain expert measurement principles at high-throughputs. Firstly, we design a vision-based, self-supervised convolutional neural network (CNN) architecture that uses differentiable image priors to optimize domain-specific objectives, refining the pixel precision of predicted robot contact poses by 20.0% relative to existing approaches. Secondly, we design a reliable graph-based planner for generating distance-minimizing paths to accelerate the robot measurement throughput and decrease planning variance by 6x. We demonstrate the performance of this approach by autonomously driving a 4-degree-of-freedom robotic probe for 24 hours to characterize semiconductor photoconductivity at 3,025 uniquely predicted poses across a gradient of drop-casted perovskite film compositions, achieving throughputs over 125 measurements per hour. Spatially mapping photoconductivity onto each drop-casted film reveals compositional trends and regions of inhomogeneity, valuable for identifying manufacturing process defects. With this self-supervised CNN-driven robotic system, we enable high-precision and reliable automation of contact-based characterization techniques at high throughputs, thereby allowing the measurement of previously inaccessible yet important semiconductor properties for self-driving laboratories.
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Submitted 29 December, 2024; v1 submitted 14 November, 2024;
originally announced November 2024.
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Electron-Magnon Coupling Mediated Magnetotransport in Antiferromagnetic van der Waals Heterostructure
Authors:
Sujan Maity,
Soumik Das,
Mainak Palit,
Koushik Dey,
Bikash Das,
Tanima Kundu,
Rahul Paramanik,
Binoy Krishna De,
Hemant Singh Kunwar,
Subhadeep Datta
Abstract:
Electron-magnon coupling reveals key insights into the interfacial properties between non-magnetic metals and magnetic insulators, influencing charge transport and spin dynamics. Here, we present temperature-dependent Raman spectroscopy and magneto-transport measurements of few-layer graphene (FLG)/antiferromagnetic FePS\(_3\) heterostructures. The magnon mode in FePS\(_3\) softens below 40 K, and…
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Electron-magnon coupling reveals key insights into the interfacial properties between non-magnetic metals and magnetic insulators, influencing charge transport and spin dynamics. Here, we present temperature-dependent Raman spectroscopy and magneto-transport measurements of few-layer graphene (FLG)/antiferromagnetic FePS\(_3\) heterostructures. The magnon mode in FePS\(_3\) softens below 40 K, and effective magnon stiffness decreases with cooling. Magnetotransport measurements show that FLG exhibits negative magnetoresistance (MR) in the heterostructure at low fields (\(\pm 0.2 \, \text{T}\)), persisting up to 100 K; beyond this, MR transitions to positive. Notably, as layer thickness decreases, the coupling strength at the interface reduces, leading to a suppression of negative MR. Additionally, magnetodielectric measurements in the FLG/FePS\(_3\)/FLG heterostructure show an upturn at temperatures significantly below ($T_\text{N}$), suggesting a role for the magnon mode in capacitance, as indicated by hybridization between magnon and phonon bands in pristine FePS\(_3\) \textit{via} magnetoelastic coupling.
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Submitted 13 November, 2024;
originally announced November 2024.
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Barrier height inhomogeneity and origin of 1/f-noise in topological insulator-based photo-detector
Authors:
Sk Kalimuddin,
Biswajit Das,
Sudipta Chatterjee,
Arnab Bera,
Satyabrata Bera,
Kalyan Kumar Chattopadhyay,
Mintu Mondal
Abstract:
Topological insulators (TIs) with symmetry-protected surface states, offer exciting opportunities for next-generation photonic and optoelectronic device applications. The heterojunctions of TIs and semiconductors (e.g. Si, Ge) have been observed to excellent photo-responsive characteristics. However, the realization of high-frequency operations in these heterojunctions can be hindered by unwanted…
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Topological insulators (TIs) with symmetry-protected surface states, offer exciting opportunities for next-generation photonic and optoelectronic device applications. The heterojunctions of TIs and semiconductors (e.g. Si, Ge) have been observed to excellent photo-responsive characteristics. However, the realization of high-frequency operations in these heterojunctions can be hindered by unwanted 1/f (or Flicker) noise and phase noise. Therefore, an in-depth understanding of 1/f noise figures becomes paramount for the effective utilization of such materials.Here we report optoelectronic response and 1/f noise characteristics of a p-n diode fabricated using topological insulator, Bi2Se3 and silicon for potential photo-detector. Through meticulous temperature-dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements, we ascertain crucial parameters like barrier height, ideality factor, and reverse saturation current of the photodetector. The low-frequency 1/f conductance noise spectra suggest a significant presence of trap states influencing the optoelectronic transport properties. The forward noise characteristics exhibit typical 1/f features, having a uni-slope across four decades of frequency, suggesting a homogeneous distribution of barrier height. The spectral and photocurrent-dependent responses show the power law behavior of noise level on photon flux. The hybrid heterojunction demonstrates excellent photo-response and reasonably low noise level, promising signatures for the room-temperature visible photodetector applications.
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Submitted 5 June, 2024; v1 submitted 29 May, 2024;
originally announced May 2024.
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Unraveling electronic structure of GeS through ARPES and its correlation with anisotropic optical and transport behavior
Authors:
Rahul Paramanik,
Tanima Kundu,
Soumik Das,
Alexey Barinov,
Bikash Das,
Sujan Maity,
Mainak Palit,
Sanjoy Kr Mahatha,
Subhadeep Datta
Abstract:
Two-dimensional (2D) van der Waals (vdW) materials with lower symmetry (triclinic, monoclinic or orthorhombic) exhibit intrinsic anisotropic in-plane structure desirable for future optoelectronic surface operating devices. Herein, we report one such material, 2D $p$-type semiconductor germanium sulfide (GeS), a group IV monochalcogenide with puckered orthorhombic morphology, in which in-plane opti…
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Two-dimensional (2D) van der Waals (vdW) materials with lower symmetry (triclinic, monoclinic or orthorhombic) exhibit intrinsic anisotropic in-plane structure desirable for future optoelectronic surface operating devices. Herein, we report one such material, 2D $p$-type semiconductor germanium sulfide (GeS), a group IV monochalcogenide with puckered orthorhombic morphology, in which in-plane optical and transport properties can be correlated with its electronic structure. We systematically investigate the electronic band structure of the bulk GeS with micro-focused angle-resolved photoemission spectroscopy ($μ$-ARPES) and correspond the charge transport properties using the field-effect transistor (FET) device architecture, and optical anisotropy $via$ angle-resolved polarization dependent Raman spectroscopy (ARPRS) on a micron-sized rectangle-shaped exfoliated bulk flake. The experimental valence band dispersion along the two high symmetry directions indicate highly anisotropic in-plane behavior of the charge carrier that agrees well with the density functional theory (DFT) calculations. In addition, we demonstrate the variation of the in-plane hole mobility (ratio $\sim$ 3.4) from the electrical conductivity with gate-sweep in a GeS-on-SiO$_2$ FET. Moreover, we use the angle-resolved fluctuation of the Raman intensity of the characteristic phonon modes to precisely determine the armchair and zigzag edges of the particular flake. The unique structural motif of GeS with correlated electronic and optical properties are of great interest both for the physical understanding of the all-optical switch and their applications in memory devices.
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Submitted 23 May, 2024;
originally announced May 2024.
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Irreversibility of mesoscopic processes with hydrodynamic interactions
Authors:
Biswajit Das,
Sreekanth K Manikandan,
Shuvojit Paul,
Avijit Kundu,
Supriya Krishnamurthy,
Ayan Banerjee
Abstract:
Optically confined colloidal particles, when placed in close proximity, form a dissipatively coupled system through hydrodynamic interactions. The role of such interactions influencing irreversibility and energy dissipation in out-of-equilibrium systems is often not well deciphered. Here, we demonstrate - through the estimation of the entropy production rate - that the nonequilibrium features of t…
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Optically confined colloidal particles, when placed in close proximity, form a dissipatively coupled system through hydrodynamic interactions. The role of such interactions influencing irreversibility and energy dissipation in out-of-equilibrium systems is often not well deciphered. Here, we demonstrate - through the estimation of the entropy production rate - that the nonequilibrium features of the system with such interactions vary depending on the nature of external driving, and importantly, on the level of coarse-graining. Crucially, we show that coarse-graining reverses the dependence of the measured entropy production rate on the strength of the hydrodynamic interactions. Furthermore, we clarify that such interactions do not violate energy balance at the level of individual trajectories, as was believed earlier. Our results highlight a previously unnoticed effect of coarse-graining in nonequilibrium systems, and have implications for the inference of entropy production in experimental contexts.
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Submitted 19 February, 2025; v1 submitted 1 May, 2024;
originally announced May 2024.
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Discrete time crystals in the presence of non-Markovian dynamics
Authors:
Bandita Das,
Noufal Jaseem,
Victor Mukherjee
Abstract:
We study discrete time crystals (DTCs) in periodically driven quantum systems, in the presence of non-Markovian dissipation. In contrast to DTCs observed in earlier works in the presence of Markovian dynamics, using the open Dicke model in presence of Jaynes-Cummings-like dissipation, we show that non-Markovian regime can be highly beneficial for stabilizing DTCs over a wide range of parameter val…
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We study discrete time crystals (DTCs) in periodically driven quantum systems, in the presence of non-Markovian dissipation. In contrast to DTCs observed in earlier works in the presence of Markovian dynamics, using the open Dicke model in presence of Jaynes-Cummings-like dissipation, we show that non-Markovian regime can be highly beneficial for stabilizing DTCs over a wide range of parameter values. This may be attributed to periodically varying dissipation rates even at long times in the case of non-Markovian dynamics. Further the Markovian and non-Markovian regimes show sharp distinctions for intermediate strengths of the dissipator coefficient, with a time-independent steady-state in the Markovian regime being replaced by varied dynamical phases, including DTC order, in the non-Markovian regime. We also verify the robustness of the DTC phase in the non-Markovian regime by introducing errors both in the Hamiltonian as well as in the dissipation. Our study shows the possibility of using DTC as a probe for non-Markovian dynamics in periodically modulated open quantum systems, at long times.
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Submitted 23 July, 2024; v1 submitted 10 April, 2024;
originally announced April 2024.
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Negative Capacitance for Stabilizing Logic State in Tunnel Field-Effect Transistor
Authors:
Koushik Dey,
Bikash Das,
Pabitra Kumar Hazra,
Tanima Kundu,
Sanjib Naskar,
Soumik Das,
Sujan Maity,
Poulomi Maji,
Bipul Karmakar,
Rahul Paramanik,
Subhadeep Datta
Abstract:
The study investigates the influence of negative capacitance on the transfer characteristics of vdW FETs on the heterophase of CIPS ferroelectric. Notably, a less pronounced NC resulting from the spatial distribution of the ferroelectric and paraelectric phases plays crucial role in stabilizing of n-channel-conductance. This results into the emergence of a non-volatile logic state, between the two…
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The study investigates the influence of negative capacitance on the transfer characteristics of vdW FETs on the heterophase of CIPS ferroelectric. Notably, a less pronounced NC resulting from the spatial distribution of the ferroelectric and paraelectric phases plays crucial role in stabilizing of n-channel-conductance. This results into the emergence of a non-volatile logic state, between the two binary states of TFETs. Concerned study proposed NC-TFETs based on ferroionic crystals as promising devices for generating a stable logic state below Vth.
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Submitted 18 March, 2024;
originally announced March 2024.
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Dimension-Dependent Critical Scaling Analysis and Emergent Competing Interaction Scales in a 2D Van der Waals magnet Cr$_{2}$Ge$_{2}$Te$_{6}$
Authors:
P. C. Mahato,
Suprotim Saha,
Bikash Das,
Subhadeep Datta,
Rajib Mondal,
Sourav Mal,
Ashish Garg,
Prasenjit Sen,
S. S. Banerjee
Abstract:
We investigate thickness-dependent transformation from a paramagnetic to ferromagnetic phase in Cr$_{2}$Ge$_{2}$Te$_{6}$ (CGT) in bulk and few-layer flake forms. 2D Ising-like critical transition in bulk CGT occurs at $T_{c}$ = 67 K with out-of-plane magnetic anisotropy. Few-layer CGT on hBN/SiO$_{2}$/Si substrate displays the same $T_{c}$ but also exhibits a new critical transition at…
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We investigate thickness-dependent transformation from a paramagnetic to ferromagnetic phase in Cr$_{2}$Ge$_{2}$Te$_{6}$ (CGT) in bulk and few-layer flake forms. 2D Ising-like critical transition in bulk CGT occurs at $T_{c}$ = 67 K with out-of-plane magnetic anisotropy. Few-layer CGT on hBN/SiO$_{2}$/Si substrate displays the same $T_{c}$ but also exhibits a new critical transition at $T^{\prime}_c$ = 14.2 K. Here, critical scaling analysis reveals the critical exponents differ significantly from those in bulk and do not align with the known universality classes. Our Density Functional Theory (DFT) and classical calculations indicate competition between magnetocrystalline and dipolar anisotropy emerges with reduced dimensions. The observed behavior is due to minor structural distortions in low dimensional CGT, which modify the balance between spin-orbit coupling, exchange interactions and dipolar anisotropy. This triggers a critical crossover at $T^{\prime}_c$. Our study shows the emergence of a complex interplay of short- and long-range interactions below $T^{\prime}_c$ as CGT approaches the 2D limit.
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Submitted 15 February, 2024;
originally announced February 2024.
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Sensing magnetic flux of Langmuir-Blodgett films of a molecular magnetic system using superconducting films and nano-SQUID devices
Authors:
Bibekananda Das,
Tapas Senapati,
Malaya K. Sahoo,
Jogendra N. Behera,
Kartik Senapati
Abstract:
We report a study on the response of superconducitng micro-tracks and quantum interference devices (SQUIDs) to a proximal SMM film. As a test case, Langmuir-Blodgett $Mn_{12}$-ac SMM films have been grown on 2 $μ$m wide Nb tracks and Nb nano-SQUIDs to observe the proximity effect of magnetic moment and magnetization tunneling, respectively. The superconducting critical temperature of thin Nb track…
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We report a study on the response of superconducitng micro-tracks and quantum interference devices (SQUIDs) to a proximal SMM film. As a test case, Langmuir-Blodgett $Mn_{12}$-ac SMM films have been grown on 2 $μ$m wide Nb tracks and Nb nano-SQUIDs to observe the proximity effect of magnetic moment and magnetization tunneling, respectively. The superconducting critical temperature of thin Nb tracks (thinner than the coherence length of Nb) were found to decrease by the magnetic moment of $Mn_{12}$-ac SMM. Following the thermally activated flux flow (TAFF) model, we found an increase in the vortex unbinding energy of the SMM coated Nb tracks, near critical temperature. More importantly, the random alignment of moments of the $Mn_{12}$-ac molecules at low fields seemed to have the enhancing effect on vortex unbinding energy rather than the saturated state of $Mn_{12}$-ac molecules at high fields. In the fully superconducting state, on the other hand, the vortex pinning effects were found to be more effective in the saturated state of the $Mn_{12}$-ac molecules, as seen from magnetoresistance and field dependent critical current measurements. In a separate experiment, a Langmuir-Blodgett film of SMM was grown on a nano-SQUID to look for local changes in magnetization arising from magnetizatin tunnelling phenomenon in SMMs. Upon magnetizing the SMM (deposited on SQUIDs) at 2 K along the plane of the film and allowing it to relax, we found occasional jumps in the underlying SQUID voltage, unlike bare nano-SQUIDs, which did not show any such jumps over several hours. Therefore, we believe that the jumps in the SQUID voltage are the signatures of random tunneling of magnetization in the SMM layer.
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Submitted 18 January, 2024; v1 submitted 15 January, 2024;
originally announced January 2024.
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Endless Dirac nodal lines and high mobility in kagome semimetal Ni3In2Se2 single crystal
Authors:
Sanand Kumar Pradhan,
Sharadnarayan Pradhan,
Priyanath Mal,
P. Rambabu,
Archana Lakhani,
Bipul Das,
Bheema Lingam Chittari,
G. R. Turpu,
Pradip Das
Abstract:
Kagome-lattice crystal is crucial in quantum materials research, exhibiting unique transport properties due to its rich band structure and the presence of nodal lines and rings. Here, we investigate the electronic transport properties and perform first-principles calculations for Ni$_{3}$In$_{2}$Se$_{2}$ kagome topological semimetal. First-principle calculations indicate six endless Dirac nodal li…
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Kagome-lattice crystal is crucial in quantum materials research, exhibiting unique transport properties due to its rich band structure and the presence of nodal lines and rings. Here, we investigate the electronic transport properties and perform first-principles calculations for Ni$_{3}$In$_{2}$Se$_{2}$ kagome topological semimetal. First-principle calculations indicate six endless Dirac nodal lines and two nodal rings with a $π$-Berry phase in the Ni$_{3}$In$_{2}$Se$_{2}$ compound. The temperature-dependent resistivity is dominated by two scattering mechanisms: $s$-$d$ interband scattering occurs below 50 K, while electron-phonon ($e$-$p$) scattering is observed above 50 K. The magnetoresistance (MR) curve aligns with the theory of extended Kohler's rule, suggesting multiple scattering origins and temperature-dependent carrier densities. A maximum MR of 120\% at 2 K and 9 T, with a maximum estimated mobility of approximately 3000 cm$^{2}$V$^{-1}$s$^{-1}$ are observed. The Ni atom's hole-like d$_{x^{2}-y^{2} }$ and electron-like d$_{z^{2}}$ orbitals exhibit peaks and valleys, forming a local indirect-type band gap near the Fermi level (E$_{F}$). This configuration enhances the motion of electrons and holes, resulting in high mobility and relatively high magnetoresistance.
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Submitted 6 January, 2024;
originally announced January 2024.
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GdAlSi: An antiferromagnetic topological Weyl semimetal with non-relativistic spin splitting
Authors:
Jadupati Nag,
Bishal Das,
Sayantika Bhowal,
Yukimi Nishioka,
Barnabha Bandyopadhyay,
Saugata Sarker,
Shiv Kumar,
Kenta Kuroda,
Venkatraman Gopalan,
Akio Kimura,
K. G. Suresh,
Aftab Alam
Abstract:
Spintronics has emerged as a viable alternative to traditional electronics based technologies in the past few decades. While on one hand, the discovery of topological phases of matter with protected spin-polarized states has opened up exciting prospects, recent revelation of intriguing non-relativistic spin splitting in collinear antiferromagnetic materials with unique symmetries facilitate a wide…
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Spintronics has emerged as a viable alternative to traditional electronics based technologies in the past few decades. While on one hand, the discovery of topological phases of matter with protected spin-polarized states has opened up exciting prospects, recent revelation of intriguing non-relativistic spin splitting in collinear antiferromagnetic materials with unique symmetries facilitate a wide possibility of realizing both these features simultaneously. In this work, we report the co-existence of these two intriguing properties within a single material: GdAlSi. It crystallizes in a body-centered tetragonal structure with a non-centrosymmetric space group $I4_{1}md$ ($109$), which is confirmed using detailed structural analysis through X-ray diffraction (XRD) and optical second harmonic generation (SHG) measurements. The magnetization data indicates AFM ordering with an ordering temperature ($T_N$) $\sim$ 32 K. Ab-initio calculations reveal GdAlSi to be a collinear antiferromagnetic Weyl semimetal with an unconventional, momentum-dependent spin splitting, also referred to as altermagnet. Angle-resolved photoemission spectroscopy measurements on GdAlSi single crystals subsequently confirm the presence of Fermi arcs, a distinctive hallmark of Weyl semimetals. Electric and magnetic multipole analysis provides a deeper understanding of the symmetry-mediated, momentum-dependent spin splitting, which has strictly non-relativistic origin. To the best of our knowledge, such co-existence of unconventional antiferromagnetic order and non-trivial topology is unprecedented and has never been observed before in a single material, rendering GdAlSi a special and promising candidate material. We propose a device harnessing these features, poised to enable practical and efficient topotronic applications.
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Submitted 27 August, 2024; v1 submitted 19 December, 2023;
originally announced December 2023.
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Bismuth Phase Dependent Growth of Superconducting NiBi3 Nanorods
Authors:
Laxmipriya Nanda,
Bidyadhar Das,
Subhashree Sahoo,
Pratap K. Sahoo,
Kartik Senapati
Abstract:
We report a study on the growth of NiBi3 nanowires and nanorods during the preparation of superconducting NiBi3 films by co-evaporation of Ni and Bi. We find that NiBi3 films grown via co-evaporation of Ni and Bi metals achieve higher transition temperatures (4.4 K) compared even to the single crystal NiBi3. However, in certain parameter space, the film surfaces were spattered with nanoscale featu…
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We report a study on the growth of NiBi3 nanowires and nanorods during the preparation of superconducting NiBi3 films by co-evaporation of Ni and Bi. We find that NiBi3 films grown via co-evaporation of Ni and Bi metals achieve higher transition temperatures (4.4 K) compared even to the single crystal NiBi3. However, in certain parameter space, the film surfaces were spattered with nanoscale features, such as nanowires and nanorods. Ambient temperature deposition resulted in polycrystalline NiBi3 nanorods which were controllable with the evaporation rate of Bi. Deposition at elevated temperatures promoted the emergence of long single crystalline NiBi3 nanorods. High resolution transmission electron microscopy measurements confirmed the crystalline behaviour of the nanorods. We believe that NiBi3 nanowires form in a process analogous to the well known vapor-liquid-solid process, as we observe an amorphous Bi cap on the nanorods. From glancing angle X-ray diffraction measurements we identify that the presence of trigonal Bi with hexagonal primitive cell in the film promotes the nucleation of nanorods. Electrical transport on a single NiBi3 nanowire shows a superconducting transition of 4.3K.
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Submitted 21 June, 2023;
originally announced June 2023.
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Josephson coupling driven magnetoresistance in superconducting NiBi3 nanowires
Authors:
Laxmipriya Nanda,
Bidyadhar Das,
Subhashree Sahoo,
Pratap K Sahoo,
Kartik Senapati
Abstract:
We present results of magnetoresistance (MR) measurements in granular NiBi3 nanowires in the resistive state below the superconducting transition temperature. MR of 100 nm wide nanowires fabricated by focused Ion beam lithography from granular films of NiBi3 with and without magnetic Ni impurity were compared. The nanowire containing high concentration of Ni impurity showed oscillations in MR and…
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We present results of magnetoresistance (MR) measurements in granular NiBi3 nanowires in the resistive state below the superconducting transition temperature. MR of 100 nm wide nanowires fabricated by focused Ion beam lithography from granular films of NiBi3 with and without magnetic Ni impurity were compared. The nanowire containing high concentration of Ni impurity showed oscillations in MR and also exhibited a negative MR in certain temperature and field range. None of these effects were observed in the nanowire with no Ni impurities. Therefore, we argue that this effect is a result of the random Josephson couplings realized across superconducting NiBi3 grains via magnetic inter grain regions. Such random couplings can cause local fluctuations in the density and sign of supercurrent, which can lead to negative MR and oscillations in MR, as proposed by Kivelson & Spivak [Kivelson et al. Phy. Rev. B. 45, 10490 (1992)].
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Submitted 1 May, 2023;
originally announced May 2023.
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Magnetic Anisotropy and Its Structural Origins in Ru-Substituted Manganite Films
Authors:
Brajagopal Das,
Lena Wysocki,
Jörg Schöpf,
Lin Yang,
Amir Capua,
Paul H. M. van Loosdrecht,
Lior Kornblum
Abstract:
Controlling magnetic anisotropy (MA) is important in a variety of applications including magnetic memories, spintronic sensors, and skyrmion-based data distribution. The perovskite manganite family provides a fertile playground for complex, intricate, and potentially useful structure-magnetism relations. Here we report on the MA that emerges in 10% Ru substituted $La_{0.7}Sr_{0.3}MnO_{3}$ (Ru-LSMO…
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Controlling magnetic anisotropy (MA) is important in a variety of applications including magnetic memories, spintronic sensors, and skyrmion-based data distribution. The perovskite manganite family provides a fertile playground for complex, intricate, and potentially useful structure-magnetism relations. Here we report on the MA that emerges in 10% Ru substituted $La_{0.7}Sr_{0.3}MnO_{3}$ (Ru-LSMO) films for which strong perpendicular magnetization and anisotropic in-plane magnetization are found. These moderately compressively strained films possess a rich microstructure, consisting of coherently strained phase which evolves into a one dimensional (1D) periodically-modulated structure above a critical thickness. We illustrate how 10% Ru substitution plays a crucial role behind the observed MA, and how the structural distortion and 1D periodic structural modulation produce the anisotropic in-plane magnetization. We highlight the practical significance of the observed MA, which could pave the way towards the realization of cutting-edge oxide-based room temperature spintronic memory devices.
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Submitted 27 July, 2023; v1 submitted 29 March, 2023;
originally announced March 2023.
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Emergence of a Non-van der Waals Magnetic Phase in a van der Waals Ferromagnet
Authors:
Bikash Das,
Subrata Ghosh,
Shamashis Sengupta,
Pascale Auban-Senzier,
Miguel Monteverde,
Tamal Kumar Dalui,
Tanima Kundu,
Rafikul Ali Saha,
Sujan Maity,
Rahul Paramanik,
Anudeepa Ghosh,
Mainak Palit,
Jayanta K Bhattacharjee,
Rajib Mondal,
Subhadeep Datta
Abstract:
Manipulation of long-range order in two-dimensional (2D) van der Waals (vdW) magnetic materials (e.g., CrI$_3$, CrSiTe$_3$ etc.), exfoliated in few-atomic layer, can be achieved via application of electric field, mechanical-constraint, interface engineering, or even by chemical substitution/doping. Usually, active surface oxidation due to the exposure in the ambient condition and hydrolysis in the…
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Manipulation of long-range order in two-dimensional (2D) van der Waals (vdW) magnetic materials (e.g., CrI$_3$, CrSiTe$_3$ etc.), exfoliated in few-atomic layer, can be achieved via application of electric field, mechanical-constraint, interface engineering, or even by chemical substitution/doping. Usually, active surface oxidation due to the exposure in the ambient condition and hydrolysis in the presence of water/moisture causes degradation in magnetic nanosheets which, in turn, affects the nanoelectronic/spintronic device performance. Counterintuitively, our current study reveals that exposure to the air at ambient atmosphere results in advent of a stable nonlayered secondary ferromagnetic phase in the form of Cr$_2$Te$_3$ (T$_{C2}$ ~ 160 K) in the parent vdW magnetic semiconductor Cr$_2$Ge$_2$Te$_6$ (T$_{C1}$ ~ 69 K). In addition, the magnetic anisotropy energy (MAE) enhances in the hybrid by an order from the weakly anisotropic pristine Cr$_2$Ge$_2$Te$_6$ crystal, increasing the stability of the FM ground state with time. Comparing with the freshly prepared Cr$_2$Ge$_2$Te$_6$, the coexistence of the two ferromagnetic phases in the time elapsed bulk crystal is confirmed through systematic investigation of crystal structure along with detailed dc/ac magnetic susceptibility, specific heat, and magnetotransport measurement. To capture the concurrence of the two ferromagnetic phases in a single material, Ginzburg-Landau theory with two independent order parameters (as magnetization) with a coupling term can be introduced. In contrast to rather common poor environmental stability of the vdW magnets, our results open possibilities of finding air-stable novel materials having multiple magnetic phases.
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Submitted 12 March, 2023;
originally announced March 2023.
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Pressure induced insulator-to-metal transition in few-layer FePS$_3$ at 1.5 GPa
Authors:
Bidyut Mallick,
Mainak Palit,
Rajkumar Jana,
Soumik Das,
Anudeepa Ghosh,
Janaky Sunil,
Sujan Maity,
Bikash Das,
Tanima Kundu,
Chandrabhas Narayana,
Ayan Datta,
Subhadeep Datta
Abstract:
In two-dimensional (2D) van der Waals (vdW) layered materials the application of pressure often induces a giant lattice collapse, which can subsequently drive an associated Mott transition. Here, we investigate room-temperature layer-dependent insulator-metal transition (IMT) and probable spin-crossover (SCO) in vdW magnet, FePS$_3$, under high-pressure using micro-Raman scattering. Experimentally…
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In two-dimensional (2D) van der Waals (vdW) layered materials the application of pressure often induces a giant lattice collapse, which can subsequently drive an associated Mott transition. Here, we investigate room-temperature layer-dependent insulator-metal transition (IMT) and probable spin-crossover (SCO) in vdW magnet, FePS$_3$, under high-pressure using micro-Raman scattering. Experimentally obtained spectra, in agreement with the computed Raman modes, indicate evidence of IMT of FePS$_3$ started with a thickness-dependent critical pressure ($P_c$) which reduces to 1.5 GPa in trilayer flakes compared to 10.8 GPa for the bulk counterpart. Using a phenomenological model, we argue that strong structural anisotropy in few-layer flakes enhances the in-plane strain under applied pressure and is, therefore, ultimately responsible for reducing the critical pressure for the IMT with decreasing layer numbers. Reduction of the critical pressure for phase transition in vdW magnets to 1-2 GPa marks the possibility of using intercalated few-layers in the field-effect transistor device architecture, and thereby, avoiding the conventional use of the diamond anvil cell (DAC).
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Submitted 31 May, 2024; v1 submitted 2 March, 2023;
originally announced March 2023.
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Tunable Electron Transport in Defect-Engineered PdSe$_\mathrm{2}$
Authors:
Tanima Kundu,
Barnik Pal,
Bikash Das,
Rahul Paramanik,
Sujan Maity,
Anudeepa Ghosh,
Mainak Palit,
Marek Kopciuszynski,
Alexei Barinov,
Sanjoy Kr Mahatha,
Subhadeep Datta
Abstract:
Tuning the ambipolar behavior in charge carrier transport via defect-engineering is crucial for achieving high mobility transistors for nonlinear logic circuits. Here, we present the electric-field tunable electron and hole transport in a microchannel device consisting of highly air-stable van der Waals (vdW) noble metal dichalcogenide (NMDC), PdSe$_\mathrm{2}$, as an active layer. Pristine bulk P…
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Tuning the ambipolar behavior in charge carrier transport via defect-engineering is crucial for achieving high mobility transistors for nonlinear logic circuits. Here, we present the electric-field tunable electron and hole transport in a microchannel device consisting of highly air-stable van der Waals (vdW) noble metal dichalcogenide (NMDC), PdSe$_\mathrm{2}$, as an active layer. Pristine bulk PdSe$_\mathrm{2}$ constitutes Se surface vacancy defects created during the growth or exfoliation process and offers an ambipolar transfer characteristics with a slight electron dominance recorded in field-effect transistor (FET) characteristics showing an ON/OFF ratio < 10 and electron mobility ~ 21 cm$^2$/V.s. However, transfer characteristics of PdSe$_\mathrm{2}$ can be tuned to a hole-dominated transport while using hydrochloric acid (HCl) as a $p$-type dopant. On the other hand, the chelating agent EDTA, being a strong electron donor, enhances the electron-dominance in PdSe$_\mathrm{2}$ channel. In addition, $p$-type behavior with a 100 times higher ON/OFF ratio is obtained while cooling the sample down to 10 K. Low-temperature angle-resolved photoemission spectroscopy resembles the $p$-type band structure of PdSe$_\mathrm{2}$ single crystal. Also, first principle density functional theory calculations justify the tunability observed in PdSe$_\mathrm{2}$ as a result of defect-engineering. Such a defect-sensitive ambipolar vdW architecture may open up new possibilities towards future CMOS (Complementary Metal-Oxide-Semiconductor) device fabrications and high performance integrated circuits.
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Submitted 3 July, 2023; v1 submitted 13 February, 2023;
originally announced February 2023.
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Enhanced directionality of active processes in a viscoelastic bath
Authors:
Biswajit Das,
Shuvojit Paul,
Sreekanth K. Manikandan,
Ayan Banerjee
Abstract:
Active fluctuations are known to play a significant role in the intracellular transport of passive objects. However, the effect of viscoelasticity of the environment in shaping such processes is relatively less understood. Here, with a minimal experiment using a driven colloid in a viscoelastic bath, we show that viscoelasticity significantly increases the mean injected power to the passive object…
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Active fluctuations are known to play a significant role in the intracellular transport of passive objects. However, the effect of viscoelasticity of the environment in shaping such processes is relatively less understood. Here, with a minimal experiment using a driven colloid in a viscoelastic bath, we show that viscoelasticity significantly increases the mean injected power to the passive object ($\sim 50\%$ compared to a viscous medium), for the same strength of the external driving. Additionally, we observe a notable reduction in negative work fluctuations across a wide range of driving amplitudes. These findings collectively suggest an enhanced directionality in driven processes within a viscoelastic bath, which we attribute to the emergence of interactions between the colloid and the viscoelastic medium.
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Submitted 23 September, 2023; v1 submitted 3 February, 2023;
originally announced February 2023.
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Manipulating Spin-Lattice Coupling in Layered Magnetic Topological Insulator Heterostructure $via$ Interface Engineering
Authors:
Sujan Maity,
Dibyendu Dey,
Anudeepa Ghosh,
Suvadip Masanta,
Binoy Krishna De,
Hemant Singh Kunwar,
Bikash Das,
Tanima Kundu,
Mainak Palit,
Satyabrata Bera,
Kapildeb Dolui,
Kenji Watanabe,
Takashi Taniguchi,
Liping Yu,
A Taraphder,
Subhadeep Datta
Abstract:
Induced magnetic order in a topological insulator (TI) can be realized either by depositing magnetic adatoms on the surface of a TI or engineering the interface with epitaxial thin film or stacked assembly of two-dimensional (2D) van der Waals (vdW) materials. Herein, we report the observation of spin-phonon coupling in the otherwise non-magnetic TI Bi$_\mathrm{2}$Te$_\mathrm{3}$, due to the proxi…
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Induced magnetic order in a topological insulator (TI) can be realized either by depositing magnetic adatoms on the surface of a TI or engineering the interface with epitaxial thin film or stacked assembly of two-dimensional (2D) van der Waals (vdW) materials. Herein, we report the observation of spin-phonon coupling in the otherwise non-magnetic TI Bi$_\mathrm{2}$Te$_\mathrm{3}$, due to the proximity of FePS$_\mathrm{3}$ (an antiferromagnet (AFM), $T_\mathrm{N}$ $\sim$ 120 K), in a vdW heterostructure framework. Temperature-dependent Raman spectroscopic studies reveal deviation from the usual phonon anharmonicity originated from spin-lattice coupling at the Bi$_{2}$Te$_{3}$/FePS$_{3}$ interface at/below 60 K in the peak position (self-energy) and linewidth (lifetime) of the characteristic phonon modes of Bi$_{2}$Te$_{3}$ (106 cm$^{-1}$ and 138 cm$^{-1}$) in the stacked heterostructure. The Ginzburg-Landau (GL) formalism, where the respective phonon frequencies of Bi$_{2}$Te$_{3}$ couple to phonons of similar frequencies of FePS$_{3}$ in the AFM phase, has been adopted to understand the origin of the hybrid magneto-elastic modes. At the same time, the reduction of characteristic $T_\mathrm{N}$ of FePS$_3$ from 120 K in isolated flakes to 65 K in the heterostructure, possibly due to the interfacial strain, which leads to smaller Fe-S-Fe bond angles as corroborated by computational studies using density functional theory (DFT). Besides, inserting hexagonal boron nitride within Bi$_{2}$Te$_{3}$/FePS$_{3}$ stacking regains the anharmonicity in Bi$_{2}$Te$_{3}$. Controlling interfacial spin-phonon coupling in stacked heterostructure can have potential application in surface code spin logic devices.
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Submitted 25 April, 2024; v1 submitted 24 December, 2022;
originally announced December 2022.
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Unconventional topological phase transition from semimetal to insulator in SnBi2Te4: Role of anomalous thermal expansion
Authors:
T. K. Dalui,
B. Das,
C. K. Barman,
P. K. Ghose,
A. Sarma,
S. K. Mahatha,
F. Diekmann,
K. Rossnagel,
S. Majumdar,
A. Alam,
S. Giri
Abstract:
We propose SnBi2Te4 to be a novel candidate material exhibiting temperature (T) mediated transitions between rich topological phases. From a combined theoretical and experimental studies, we find that SnBi2Te4 goes from a low-T topological semimetallic phase to a high-T (room temperature) topological insulating phase via an intermediate topological metallic phase. Single crystals of SnBi2Te4 are c…
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We propose SnBi2Te4 to be a novel candidate material exhibiting temperature (T) mediated transitions between rich topological phases. From a combined theoretical and experimental studies, we find that SnBi2Te4 goes from a low-T topological semimetallic phase to a high-T (room temperature) topological insulating phase via an intermediate topological metallic phase. Single crystals of SnBi2Te4 are characterized by various experimental probes including Synchrotron based X-ray diffraction, magnetoresistance, Hall effect, Seebeck coefficient, magnetization and angle-resolved photoemission spectroscopy (ARPES). X-ray diffraction data confirms an anomalous thermal expansion of the unit cell volume below 100 K, which significantly affects the bulk band structure and hence the transport properties, as confirmed by our density functional theory calculations. Simulated surface states at 15 K agree fairly well with our ARPES data and are found to be robust with varying T. This indirectly supports the experimentally observed paramagnetic singularity in the entire T-range. The proposed coexistence of rich topological phases is a rare occurrence, yet paves a fertile ground to tune various topological phases in a material driven by structural distortion.
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Submitted 14 December, 2022;
originally announced December 2022.
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Ultrahigh breakdown current density of van der Waals One Dimensional $\mathrm{PdBr_2}$
Authors:
Bikash Das,
Kapildeb Dolui,
Rahul Paramanik,
Tanima Kundu,
Sujan Maity,
Anudeepa Ghosh,
Mainak Palit,
Subhadeep Datta
Abstract:
One-dimensional (1D) van der Waals (vdW) materials offer nearly defect-free strands as channel material in the field-effect transistor (FET) devices and probably, a better interconnect than conventional copper with higher current density and resistance to electro-migration with sustainable down-scaling. We report a new halide based "truly" 1D few-chain atomic thread, PdBr$_2$, isolable from its bu…
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One-dimensional (1D) van der Waals (vdW) materials offer nearly defect-free strands as channel material in the field-effect transistor (FET) devices and probably, a better interconnect than conventional copper with higher current density and resistance to electro-migration with sustainable down-scaling. We report a new halide based "truly" 1D few-chain atomic thread, PdBr$_2$, isolable from its bulk which crystallizes in a monoclinic space group C2/c. Liquid phase exfoliated nanowires with mean length (20$\pm$1)$μ$m transferred onto SiO$_2$/Si wafer with a maximum aspect ratio of 5000 confirms the lower cleavage energy perpendicular to chain direction. Moreover, an isolated nanowire can also sustain current density of 200 MA/cm$^\mathrm{2}$ which is atleast one-order higher than typical copper interconnects. However, local transport measurement via conducting atomic force microscopy (CAFM) tip along the cross direction of the single chain records a much lower current density due to the anisotropic electronic band structure. While 1D nature of the nanoobject can be linked with non-trivial collective quantum behavior, vdW nature could be beneficial for the new pathways in interconnect fabrication strategy with better control of placement in an integrated circuit (IC).
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Submitted 16 November, 2022; v1 submitted 7 September, 2022;
originally announced September 2022.
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Unlocking the electronic, optical and transport properties of semiconductor coupled quantum dots using first principles methods
Authors:
Arup Chakraborty,
Bidisa Das,
Indra Dasgupta
Abstract:
Semiconductor coupled quantum dots provide a unique opportunity of tuning bandgaps by tailoring band offsets, making them ideal for photovoltaic and other applications. Here, we have studied stability, trends in the band gap, band offsets, and optical properties for a series of coupled quantum dots comprised of II-VI semiconductor using a hybrid functional method. We have shown how the quantum con…
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Semiconductor coupled quantum dots provide a unique opportunity of tuning bandgaps by tailoring band offsets, making them ideal for photovoltaic and other applications. Here, we have studied stability, trends in the band gap, band offsets, and optical properties for a series of coupled quantum dots comprised of II-VI semiconductor using a hybrid functional method. We have shown how the quantum confinement and interfacial strain considerably affect the band gap and band offsets for these heterostructures at the nanoscale. We show that the trend in band offsets obtained from our first-principles electronic structure calculations agrees with that obtained from the method of average electrostatic potential. It is found that a common anion rule for band offset is followed for these heterostructures at the nanoscale. Further, the calculated optical absorption spectra for these coupled quantum dots reveal that absorption peaks lie in the ultra-violet (UV) region, whereas absorption edges are in the visible region. In addition to electronic and optical properties, we have also explored transport properties for two representative coupled quantum dots, either having common cations or common anions, which revealed asymmetric nature in current-voltage characteristics. Therefore these semiconductor coupled quantum dots may be useful for photovoltaic, light-emitting diode, and opto-electronic devices.
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Submitted 13 August, 2022;
originally announced August 2022.
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Anisotropic Magnetodielectric Coupling in Layered Antiferromagnetic FePS$_3$
Authors:
Anudeepa Ghosh,
Magdalena Birowska,
Pradeepta Kumar Ghose,
Miłosz Rybak,
Sujan Maity,
Somsubhra Ghosh,
Bikash Das,
Koushik Dey,
Satyabrata Bera,
Suresh Bhardwaj,
Shibabrata Nandi,
Subhadeep Datta
Abstract:
We report anisotropic magnetodielectric (MD) coupling in layered van der Waals (vdW) antiferromagnetic (AFM) FePS$_3$ (Néel temperature $T_{\mathrm{N}}$ $\sim$ 120K) with perpendicular anisotropy. Above $T_N$, while dielectric response function along \textit{c}-axis shows frequency dependent relaxations, in-plane data is frequency independent and reveals a deviation from phonon-anharmonicity in th…
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We report anisotropic magnetodielectric (MD) coupling in layered van der Waals (vdW) antiferromagnetic (AFM) FePS$_3$ (Néel temperature $T_{\mathrm{N}}$ $\sim$ 120K) with perpendicular anisotropy. Above $T_N$, while dielectric response function along \textit{c}-axis shows frequency dependent relaxations, in-plane data is frequency independent and reveals a deviation from phonon-anharmonicity in the ordered state, thereby implying a connection to spin-phonon coupling known to be indicative of onset of magnetic ordering. At low temperature (below 40 K), atypical anomaly in the dielectric constant is corroborated with temperature dependent DC and AC susceptibility. The magnetodielectric response across this anomaly differs significantly for both, in-plane and out-of-plane cases. We have explained this in terms of preferential orientation of magnetic AFM-z alignment, implied by the in-plane structural anisotropy as confirmed by \textit{ab-initio} calculations. Controlling relative strength of magnetodielectric coupling with magnetic anisotropy opens up a strategy for tracking subtle modifications of structure, such as in-plane anisotropy, with potential application to spintronic technologies.
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Submitted 4 August, 2023; v1 submitted 4 August, 2022;
originally announced August 2022.
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Nonlinear coherent light-matter interaction in 2D MoSe$_2$ nanoflakes for all-optical switching and logic applications
Authors:
Sk Kalimuddin,
Biswajit Das,
Nabamita Chakraborty,
Madhupriya Samanta,
Satyabrata Bera,
Arnab Bera,
Deep Singha Roy,
Suman Kalyan Pradhan,
Kalyan K. Chattopadhyay,
Mintu Mondal
Abstract:
We report a strong nonlinear optical response of 2D MoSe$_2$ nanoflakes (NFs) through spatial self-phase modulation (SSPM) and cross-phase modulation (XPM) induced by nonlocal coherent light-matter interactions. The coherent interaction of light and MoSe$_2$ NFs creates the SSPM of laser beams, forming concentric diffraction rings. The nonlinear refractive index ($n_2$) and the third-order broadba…
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We report a strong nonlinear optical response of 2D MoSe$_2$ nanoflakes (NFs) through spatial self-phase modulation (SSPM) and cross-phase modulation (XPM) induced by nonlocal coherent light-matter interactions. The coherent interaction of light and MoSe$_2$ NFs creates the SSPM of laser beams, forming concentric diffraction rings. The nonlinear refractive index ($n_2$) and the third-order broadband nonlinear optical susceptibility ($χ^{(3)}$) of MoSe$_2$ NFs are determined from the self diffraction pattern at different exciting wavelengths of 405, 532, and 671 nm with varying the laser intensity. The evolution and deformation of diffraction ring patterns are observed and analyzed by the `wind-chime' model and thermal effect. By taking advantage of the reverse saturated absorption of 2D SnS$_2$ NFs compared to MoSe$_2$, an all-optical diode has been designed with MoSe$_2$/SnS$_2$ hybrid structure to demonstrate the nonreciprocal light propagation. Also a few other optical devices based on MoSe$_2$ and other semiconducting materials such as Bi$_2$Se$_3$, CuPc, and graphene have been investigated. The all-optical logic gates and all-optical information conversion have been demonstrated through the XPM technique using two laser beams. The proposed optical scheme based on MoSe$_2$ NFs has been demonstrated as a potential candidate for all-optical nonlinear photonic devices such as all-optical diodes and all-optical switches.
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Submitted 25 June, 2022;
originally announced June 2022.
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Revisiting the magnetic ordering through anisotropic magnetic entropy change in quasi-two-dimensional metallic ferromagnet, Fe$_4$GeTe$_2$
Authors:
Satyabrata Bera,
Suman Kalyan Pradhan,
Md Salman Khan,
Riju Pal,
Buddhadeb Pal,
Sk Kalimuddin,
Arnab Bera,
Biswajit Das,
Atindra Nath Pal,
Mintu Mondal
Abstract:
We have investigated the nature of ferromagnetic order and phase transitions in two dimensional (2D) van der Waals (vdW) layered material, Fe$_4$GeTe$_2$ through measurements of magnetization, magneto-caloric Effect (MCE), and heat capacity. Fe$_4$GeTe$_2$ hosts a complex magnetic phase with two distinct transitions: paramagnetic to ferromagnetic at around $T_\text{C}$ $\sim$ 266 K and another spi…
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We have investigated the nature of ferromagnetic order and phase transitions in two dimensional (2D) van der Waals (vdW) layered material, Fe$_4$GeTe$_2$ through measurements of magnetization, magneto-caloric Effect (MCE), and heat capacity. Fe$_4$GeTe$_2$ hosts a complex magnetic phase with two distinct transitions: paramagnetic to ferromagnetic at around $T_\text{C}$ $\sim$ 266 K and another spin reorientation transition (SRT) at around $T_\text{SRT}$ $\sim $ 100 K. The magnetization measurements shows a prominent thermal hysteresis in proximity to $T_\text{SRT}$ at $H\parallel c$, which implies the first-order nature of SRT. Reasonable MCE has been observed around both transition temperatures ( at around $T_\text{C}$, -$Δ$S$_M^\text{max}$ = 1.95 and 1.99 J.Kg$^{-1}$K$^{-1}$ and at around $T_\text{SRT}$, -$Δ$S$_M^\text{max}$= 3.9 and 2.4 J.Kg$^{-1}$K$^{-1}$ along $H\parallel ab$ and $H\parallel c$ respectively) at 50 kOe magnetic field change. The above results reveal higher MCE value at $T_\text{SRT}$ compared to the values of MCE at $T_\text{C}$. The scaling analysis of MCE at $T_\text{C}$, shows that the rescaled $Δ$S$_M (T, H)$ follow a universal curve confirming the second-order character of the ferromagnetic transition. The same scaling analysis of MCE breaks down at $T_\text{SRT}$ suggesting that SRT is not a second order phase transition. The exponent $n$ from field dependence of magnetic entropy change presents a maximum of $|n|>2$ confirming the first-order nature of SRT.
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Submitted 25 June, 2022;
originally announced June 2022.
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Inferring entropy production in anharmonic Brownian gyrators
Authors:
Biswajit Das,
Sreekanth K Manikandan,
Ayan Banerjee
Abstract:
A non-vanishing entropy production rate is one of the defining characteristics of any non-equilibrium system, and several techniques exist to determine this quantity directly from experimental data. The short-time inference scheme, derived from the thermodynamic uncertainty relation, is a recent addition to the list of these techniques. Here we apply this scheme to quantify the entropy production…
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A non-vanishing entropy production rate is one of the defining characteristics of any non-equilibrium system, and several techniques exist to determine this quantity directly from experimental data. The short-time inference scheme, derived from the thermodynamic uncertainty relation, is a recent addition to the list of these techniques. Here we apply this scheme to quantify the entropy production rate in a class of microscopic heat engine models called Brownian gyrators. In particular, we consider models with anharmonic confining potentials. In these cases, the dynamical equations are indelibly non-linear, and the exact dependences of the entropy production rate on the model parameters are unknown. Our results demonstrate that the short-time inference scheme can efficiently determine these dependencies from a moderate amount of trajectory data. Furthermore, the results show that the non-equilibrium properties of the gyrator model with anharmonic confining potentials are considerably different from its harmonic counterpart - especially in set-ups leading to a non-equilibrium dynamics and the resulting gyration patterns.
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Submitted 1 September, 2022; v1 submitted 20 April, 2022;
originally announced April 2022.
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Floquet Quantum Thermal Transistor
Authors:
Nikhil Gupt,
Srijan Bhattacharyya,
Bikash Das,
Subhadeep Datta,
Victor Mukherjee,
Arnab Ghosh
Abstract:
We apply periodic control to realize a quantum thermal transistor, which we term as the Floquet Quantum thermal Transistor. Periodic modulation allows us to control the heat flows and achieve large amplification factors even for fixed bath temperatures. Importantly, this transistor effect persists in the cut-off region, where traditional quantum thermal transistors operating in absence of periodic…
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We apply periodic control to realize a quantum thermal transistor, which we term as the Floquet Quantum thermal Transistor. Periodic modulation allows us to control the heat flows and achieve large amplification factors even for fixed bath temperatures. Importantly, this transistor effect persists in the cut-off region, where traditional quantum thermal transistors operating in absence of periodic modulation, fail to act as viable heat modulation devices.
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Submitted 11 August, 2022; v1 submitted 13 April, 2022;
originally announced April 2022.
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Defect Controlled Ferromagnetic Ordering in Au Implanted TiSe$_2$ Nanocrystals
Authors:
Utkalika P. Sahoo,
Spandan Anupam,
Bidyadhar Das,
Mrinal K. Sikdar,
Laxmipriya Nanda,
Pratap K. Sahoo
Abstract:
Layered transition metal dichalcogenides (TMDs) are attracting increasing attention because they exhibit unconventional magnetic properties due to crystal imperfections in their usually non-magnetic 2D structure. This work aims to investigate the magnetic response of self-engineered Se deficient TiSe$_2$ thin films, synthesized using chemical vapour deposition. We demonstrate tunability of the fer…
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Layered transition metal dichalcogenides (TMDs) are attracting increasing attention because they exhibit unconventional magnetic properties due to crystal imperfections in their usually non-magnetic 2D structure. This work aims to investigate the magnetic response of self-engineered Se deficient TiSe$_2$ thin films, synthesized using chemical vapour deposition. We demonstrate tunability of the ferromagnetic order with the introduction of Au atoms using low energy Au ion implantation, which works as a controlling knob to vary the stoichiometry of Se in TiSe$_{2-x}$. The corresponding isothermal field-magnetization curves fit well with a modified Brillouin J function with J value of 1.5 for Ti$^{3+}$, and 4 for Au$^{3+}$, accounting for the diamagnetism that arises from Au implantation. We propose a qualitative model for the experimentally observed magnetization as a function of ion fluence, corroborated with high-resolution transmission electron microscopy. Depending on the Au nanoparticle size in the implanted samples, magnetization saturates faster at a much lower applied magnetic field than the pristine sample. Our findings hold potential to expand the range of 2D ferromagnetic materials for spintronics and magnetic sensing applications.
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Submitted 2 February, 2022;
originally announced February 2022.
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Non-monotonic skewness of currents in non-equilibrium steady states
Authors:
Sreekanth K Manikandan,
Biswajit Das,
Raunak Dey,
Avijit Kundu,
Ayan Banerjee,
Supriya Krishnamurthy
Abstract:
Measurements of any property of a microscopic system are bound to show significant deviations from the average, due to thermal fluctuations. For time-integrated currents such as heat, work or entropy production in a steady state, it is in fact known that there will be long stretches of fluctuations both above as well as below the average, occurring equally likely at large times. In this paper we s…
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Measurements of any property of a microscopic system are bound to show significant deviations from the average, due to thermal fluctuations. For time-integrated currents such as heat, work or entropy production in a steady state, it is in fact known that there will be long stretches of fluctuations both above as well as below the average, occurring equally likely at large times. In this paper we show that for any finite-time measurement in a non-equilibrium steady state - rather counter-intuitively - fluctuations below the average are more probable. This discrepancy is higher when the system is further away from equilibrium. For overdamped diffusive processes, there is even an optimal time when time-integrated current fluctuations mostly lie below the average. We demonstrate that these effects result from the non-monotonic skewness of current fluctuations and provide evidence that they are easily observable in experiments. We also discuss their extensions to discrete space Markov jump processes and implications to biological and synthetic microscopic engines.
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Submitted 18 August, 2022; v1 submitted 17 January, 2022;
originally announced January 2022.
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Electrochemically-driven insulator-metal transition in ionic-liquid-gated antiferromagnetic Mott-insulating NiS$_2$ single crystals
Authors:
Sajna Hameed,
Bryan Voigt,
John Dewey,
William Moore,
Damjan Pelc,
Bhaskar Das,
Sami El-Khatib,
Javier Garcia-Barriocanal,
Bing Luo,
Nick Seaton,
Guichuan Yu,
Chris Leighton,
Martin Greven
Abstract:
Motivated by the existence of superconductivity in pyrite-structure CuS$_2$, we explore the possibility of ionic-liquid-gating-induced superconductivity in the proximal antiferromagnetic Mott insulator NiS$_2$. A clear gating-induced transition from a two-dimensional insulating state to a three-dimensional metallic state is observed at positive gate bias on single crystal surfaces. No evidence for…
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Motivated by the existence of superconductivity in pyrite-structure CuS$_2$, we explore the possibility of ionic-liquid-gating-induced superconductivity in the proximal antiferromagnetic Mott insulator NiS$_2$. A clear gating-induced transition from a two-dimensional insulating state to a three-dimensional metallic state is observed at positive gate bias on single crystal surfaces. No evidence for superconductivity is observed down to the lowest measured temperature of 0.45 K, however. Based on transport, energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, atomic force microscopy, and other techniques, we deduce an electrochemical gating mechanism involving a substantial decrease in the S:Ni ratio (over hundreds of nm), which is both non-volatile and irreversible. This is in striking contrast to the reversible, volatile, surface-limited, electrostatic gate effect in pyrite FeS$_2$. We attribute this stark difference in electrochemical vs. electrostatic gating response in NiS$_2$ and FeS$_2$ to the much larger S diffusion coefficient in NiS$_2$, analogous to the different behaviors observed among electrolyte-gated oxides with differing O-vacancy diffusivities. The gating irreversibility, on the other hand, is associated with the lack of atmospheric S; this is in contrast to the better understood oxide case, where electrolysis of atmospheric H$_2$O provides an O reservoir. This study of NiS$_2$ thus provides new insight into electrolyte gating mechanisms in functional materials, in a previously unexplored limit.
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Submitted 2 January, 2022;
originally announced January 2022.
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The thickness dependence of quantum oscillations in ferromagnetic Weyl metal SrRuO$_{3}$
Authors:
Uddipta Kar,
Akhilesh Kr. Singh,
Yu-Te Hsu,
Chih-Yu Lin,
Bipul Das,
Cheng-Tung Cheng,
M. Berben,
Song Yang,
Chun-Yen Lin,
Chia-Hung Hsu,
S. Wiedmann,
Wei-Cheng Lee,
Wei-Li Lee
Abstract:
Quantum oscillations in resistivity and magnetization at high magnetic fields are a macroscopic fingerprint of the energy quantization due to the cyclotron motion of quasiparticles. In a thin Weyl semimetal, a unique thickness dependent Weyl-orbit quantum oscillation was proposed to exist, originating from a nonlocal cyclotron orbit via the electron tunneling between the top and bottom Fermi-arc s…
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Quantum oscillations in resistivity and magnetization at high magnetic fields are a macroscopic fingerprint of the energy quantization due to the cyclotron motion of quasiparticles. In a thin Weyl semimetal, a unique thickness dependent Weyl-orbit quantum oscillation was proposed to exist, originating from a nonlocal cyclotron orbit via the electron tunneling between the top and bottom Fermi-arc surface states. Here, untwinned and high crystalline Weyl metal SrRuO$_3$ thin films with different thicknesses were grown on miscut SrTiO$_3$ (001) substrates. Magneto-transport measurements were carried out in magnetic fields up to 35 T, and quantum oscillations with different frequencies were observed and compared to the calculated band structure. In particular, we discovered a frequency $F \approx$ 30 T at low temperatures and above 3 T that corresponds to a small Fermi pocket with a light effective mass. Its oscillation amplitude appears to be at maximum for film thicknesses in a range of 10 to 20 nm, and the phase of the oscillation exhibits a systematic change with the film thickness. After isolating the well separated frequencies, the constructed Landau fan diagram shows an unusual concave downward curvature in the 1/$μ_0H_n$-$n$ curve, where $n$ is the Landau level index. Based on the rigorous analysis of the thickness and field-orientation dependence of the quantum oscillations, the oscillation with $F \approx$ 30 T is attributed to be of surface origin, which is related to the Fermi-arc surface state originating from non-overlapping Weyl nodes projected on the film's surface plane. Those findings can be understood within the framework of the Weyl-orbit quantum oscillation effect with non-adiabatic corrections.
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Submitted 20 September, 2022; v1 submitted 26 December, 2021;
originally announced December 2021.
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Effect of doping, photodoping and bandgap variation on the performance of perovskite solar cells
Authors:
Basita Das,
Irene Aguilera,
Uwe Rau,
Thomas Kirchartz
Abstract:
Most traditional semiconductor materials are based on the control of doping densities to create junctions and thereby functional and efficient electronic and optoelectronic devices. The technology development for halide perovskites had initially only rarely made use of the concept of electronic doping of the perovskite layer and instead employed a variety of different contact materials to create f…
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Most traditional semiconductor materials are based on the control of doping densities to create junctions and thereby functional and efficient electronic and optoelectronic devices. The technology development for halide perovskites had initially only rarely made use of the concept of electronic doping of the perovskite layer and instead employed a variety of different contact materials to create functionality. Only recently, intentional, or unintentional doping of the perovskite layer is more frequently invoked as an important factor explaining differences in photovoltaic or optoelectronic performance in certain devices. Here we use numerical simulations to study the influence of doping and photodoping on photoluminescence quantum yield as well as other device relevant metrics. We find that doping can improve the photoluminescence quantum yield by making radiative recombination faster. This effect can benefit or harm photovoltaic performance given that the improvement of photoluminescence quantum efficiency and open-circuit voltage is accompanied by a reduction of the diffusion length. This reduction will eventually lead to inefficient carrier collection at high doping densities. The photovoltaic performance might improve at an optimum doping density which depends on a range of factors such as the mobilities of the different layers and the ratio of the capture cross sections for electrons and holes.
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Submitted 6 December, 2021;
originally announced December 2021.
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Superconductivity coexisting with ferromagnetism in a quasi-one dimensional non-centrosymmetric (TaSe$_4$)$_3$I
Authors:
Arnab Bera,
Sirshendu Gayen,
Suchanda Mondal,
Riju Pal,
Buddhadeb Pal,
Aastha Vasdev,
Sandeep Howlader,
Manish Jana,
Tanmay Maiti,
Rafikul Ali Saha,
Biswajit Das,
Biswarup Satpati,
Atindra Nath Pal,
Prabhat Mandal,
Goutam Sheet,
Mintu Mondal
Abstract:
Low-dimensional materials with broken inversion symmetry and strong spin-orbit coupling can give rise to fascinating quantum phases and phase transitions. Here we report coexistence of superconductivity and ferromagnetism below 2.5\,K in the quasi-one dimensional crystals of non-centrosymmetric (TaSe$_4$)$_3$I (space group: $P\bar{4}2_1c$). The unique phase is a direct consequence of inversion sym…
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Low-dimensional materials with broken inversion symmetry and strong spin-orbit coupling can give rise to fascinating quantum phases and phase transitions. Here we report coexistence of superconductivity and ferromagnetism below 2.5\,K in the quasi-one dimensional crystals of non-centrosymmetric (TaSe$_4$)$_3$I (space group: $P\bar{4}2_1c$). The unique phase is a direct consequence of inversion symmetry breaking as the same material also stabilizes in a centro-symmetric structure (space group: $P4/mnc$) where it behaves like a non-magnetic insulator. The coexistence here upfront contradicts the popular belief that superconductivity and ferromagnetism are two apparently antagonistic phenomena. Notably, here, for the first time, we have clearly detected Meissner effect in the superconducting state despite the coexisting ferromagnetic order. The coexistence of superconductivity and ferromagnetism projects non-centrosymmetric (TaSe$_4$)$_3$I as a host for complex ground states of quantum matter including possible unconventional superconductivity with elusive spin-triplet pairing.
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Submitted 30 November, 2021; v1 submitted 29 November, 2021;
originally announced November 2021.
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Competing insulating phases of dipolar bosons in a dimerized optical lattice
Authors:
Aoi Hayashi,
Suman Mondal,
Tapan Mishra,
B. P. Das
Abstract:
We study the ground state properties of dipolar bosons in a one dimensional dimerized optical lattice. In the limit of strong onsite repulsion i.e. hardcore bosons, and strong dipole-dipole interaction, a stable density wave (DW) phase is obtained at half filling as a function of lattice dimerization. Interestingly, at quarter filling we obtain the signatures of an insulating phase which has both…
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We study the ground state properties of dipolar bosons in a one dimensional dimerized optical lattice. In the limit of strong onsite repulsion i.e. hardcore bosons, and strong dipole-dipole interaction, a stable density wave (DW) phase is obtained at half filling as a function of lattice dimerization. Interestingly, at quarter filling we obtain the signatures of an insulating phase which has both the character the bond-order (BO) and the DW insulators which we call a bond-order density wave (BODW) phase. Moreover, we show that for a fixed hopping dimerization there occurs a BO-DW phase crossover as a function of the dipole-dipole interaction and the BODW phase is more robust when the hopping dimerization is stronger. We further examine the stability of the BODW phase in the limit of finite onsite interactions.
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Submitted 3 November, 2021;
originally announced November 2021.
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Signatures of non-trivial pairing in the quantum walk of two-component bosons
Authors:
Mrinal Kanti Giri,
Suman Mondal,
B. P. Das,
Tapan Mishra
Abstract:
Nearest neighbour bosons possessing only onsite interactions do not form onsite bound pairs in their quantum walk due to fermionization. We obtain signatures of non-trivial onsite pairing in the quantum walk of strongly interacting two component bosons in a one dimensional lattice. By considering an initial state with particles from different components located at the nearest-neighbour sites in th…
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Nearest neighbour bosons possessing only onsite interactions do not form onsite bound pairs in their quantum walk due to fermionization. We obtain signatures of non-trivial onsite pairing in the quantum walk of strongly interacting two component bosons in a one dimensional lattice. By considering an initial state with particles from different components located at the nearest-neighbour sites in the central region of the lattice, we show that in the dynamical evolution of the system, competing intra- and inter-component onsite repulsion leads to the formation of onsite inter-component bound states. We find that when the total number of particles is three, an inter-component pair is favoured in the limit of equal intra- and inter-component interaction strengths. However, when two bosons from each species are considered, inter-component pairs and trimer are favoured depending on the ratios of the intra- and inter-component interactions. In both the cases, we find that the quantum walks exhibit a re-entrant behaviour as a function of inter-component interaction.
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Submitted 28 July, 2022; v1 submitted 2 September, 2021;
originally announced September 2021.
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High-sensitivity of initial SrO growth on the residual resistivity in epitaxial thin films of SrRuO$_3$ on SrTiO$_3$ (001)
Authors:
Uddipta Kar,
Akhilesh Kr. Singh,
Song Yang,
Chun-Yen Lin,
Bipul Das,
Chia-Hung Hsu,
Wei-Li Lee
Abstract:
The growth of SrRuO$_3$ (SRO) thin film with high-crystallinity and low residual resistivity (RR) is essential to explore its intrinsic properties. Here, utilizing the adsorption-controlled growth technique, the growth condition of initial SrO layer on TiO$_2$-terminated SrTiO$_3$ (STO) (001) substrate was found to be crucial for achieving a low RR in the resulting SRO film grown afterward. The op…
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The growth of SrRuO$_3$ (SRO) thin film with high-crystallinity and low residual resistivity (RR) is essential to explore its intrinsic properties. Here, utilizing the adsorption-controlled growth technique, the growth condition of initial SrO layer on TiO$_2$-terminated SrTiO$_3$ (STO) (001) substrate was found to be crucial for achieving a low RR in the resulting SRO film grown afterward. The optimized initial SrO layer shows a $c$(2 x 2) superstructure that was characterized by electron diffraction, and a series of SRO films with different thicknesses ($t$s) were then grown. The resulting SRO films exhibit excellent crystallinity with orthorhombic-phase down to $t \approx$ 4.3 nm, which was confirmed by high resolution X-ray measurements. From azimuthal X-ray scan for SRO orthorhombic (021) reflection, we uncover four structural domains with a dominant domain of orthorhombic SRO [001] along cubic STO [010] direction. The dominant domain population depends on $t$, STO miscut angle ($α$), and miscut direction ($β$), giving a volume fraction of about 92 $\%$ for $t \approx$ 26.6 nm and ($α$, $β$) ~ (0.14$^{\rm o}$, 5$^{\rm o}$). On the other hand, metallic and ferromagnetic properties were well preserved down to $t \approx$ 1.2 nm. Residual resistivity ratio (RRR = $ρ$(300 K)/$ρ$(5 K)) reduces from 77.1 for $t \approx$ 28.5 nm to 2.5 for $t \approx$ 1.2 nm, while $ρ$(5 K) increases from 2.5 $μΩ$cm for $t \approx$ 28.5 nm to 131.0 $μΩ$cm for $t \approx$ 1.2 nm. The ferromagnetic onset temperature ($T_c\prime$) of around 151 K remains nearly unchanged down to $t \approx$ 9.0 nm and decreases to 90 K for $t \approx$ 1.2 nm. Our finding thus provides a practical guideline to achieve high crystallinity and low RR in ultra-thin SRO films by simply adjusting the growth of initial SrO layer.
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Submitted 5 May, 2021;
originally announced May 2021.
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Experimental verification of Arcsine laws in mesoscopic non-equilibrium and active systems
Authors:
Raunak Dey,
Avijit Kundu,
Biswajit Das,
Ayan Banerjee
Abstract:
A large number of processes in the mesoscopic world occur out of equilibrium, where the time course of a system evolution becomes immensely important since it is driven principally by dissipative effects. Non-equilibrium steady states (NESS) represent a crucial category in such systems, where relaxation timescales are comparable to the operational timescales. In this study, we employ a model NESS…
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A large number of processes in the mesoscopic world occur out of equilibrium, where the time course of a system evolution becomes immensely important since it is driven principally by dissipative effects. Non-equilibrium steady states (NESS) represent a crucial category in such systems, where relaxation timescales are comparable to the operational timescales. In this study, we employ a model NESS stochastic system which comprises of a colloidal microparticle, optically trapped in a viscous fluid, externally driven by a temporally correlated noise, and show that time-integrated observables such as the entropic current, the work done on the system or the work dissipated by it, follow the three Levy arcsine laws [1], in the large time limit. We discover that cumulative distributions converge faster to arcsine distributions when it is near equilibrium and the rate of entropy production is small, because in that case the entropic current has weaker temporal autocorrelation. We study this phenomenon changing the strength of the added noise or by perturbing our system with a flow field produced by a microbubble at close proximity to the trapped particle. We confirm our experimental findings with theoretical simulations of the systems. Our work provides an interesting insight into the NESS statistics of the meso-regime, where stochastic fluctuations play a pivotal role.
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Submitted 10 May, 2022; v1 submitted 31 March, 2021;
originally announced April 2021.
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Quantitative analysis of non-equilibrium systems from short-time experimental data
Authors:
Sreekanth K Manikandan,
Subhrokoli Ghosh,
Avijit Kundu,
Biswajit Das,
Vipin Agrawal,
Dhrubaditya Mitra,
Ayan Banerjee,
Supriya Krishnamurthy
Abstract:
We provide a minimal strategy for the quantitative analysis of a large class of non-equilibrium systems in a {statistically} steady state using the short-time Thermodynamic Uncertainty Relation (TUR). From short-time trajectory data obtained from experiments, we demonstrate how we can simultaneously infer quantitatively, both the thermodynamic force field acting on the system, as well as the (pote…
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We provide a minimal strategy for the quantitative analysis of a large class of non-equilibrium systems in a {statistically} steady state using the short-time Thermodynamic Uncertainty Relation (TUR). From short-time trajectory data obtained from experiments, we demonstrate how we can simultaneously infer quantitatively, both the thermodynamic force field acting on the system, as well as the (potentially exact) rate of entropy production. We benchmark this scheme first for an experimental study of a colloidal particle system where exact analytical results are known, before applying it to the case of a colloidal particle in a hydrodynamical flow field, where neither analytical nor numerical results are available. In this latter case, we build an effective model of the system based on our results. In both cases, we also demonstrate that our results match with those obtained from another recently introduced scheme [Phys. Rev. X 10, 021009].
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Submitted 1 October, 2021; v1 submitted 22 February, 2021;
originally announced February 2021.
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Defect tolerant device geometries
Authors:
Basita Das,
Zhifa Liu,
Irene Aguilera,
Uwe Rau,
Thomas Kirchartz
Abstract:
The term defect tolerance is widely used in literature to describe materials such as lead-halides which exhibit long non-radiative lifetimes of carriers despite possessing a large concentration of point defects. Studies on defect tolerance of materials mostly look at the properties of the host material and/or the chemical nature of defects that affect the capture coefficients of defects. However,…
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The term defect tolerance is widely used in literature to describe materials such as lead-halides which exhibit long non-radiative lifetimes of carriers despite possessing a large concentration of point defects. Studies on defect tolerance of materials mostly look at the properties of the host material and/or the chemical nature of defects that affect the capture coefficients of defects. However, the recombination activity of a defect is not only a function of its capture coefficients alone but are also dependent on the electrostatics and the design of the layer stack of a photovoltaic device. Here we study the influence of device geometry on defect tolerance by combining calculations of capture coefficients with device simulations. We derive generic device design principles which can inhibit recombination inside a photovoltaic device for a given set of capture coefficients based on the idea of slowing down the slower of the two processes (electron and hole capture) even further by modifying electron and hole injection into the absorber layer. We use the material parameters and typical p-i-n device geometry representing methylammonium lead halide perovskites solar cells to illustrate the application of our generic design principles to improve specific devices .
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Submitted 31 August, 2020;
originally announced August 2020.
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Two component quantum walk in one-dimensional lattice with hopping imbalance
Authors:
Mrinal Kanti Giri,
Suman Mondal,
Bhanu Pratap Das,
Tapan Mishra
Abstract:
We investigate the two-component quantum walk in one-dimensional lattice. We show that the inter-component interaction strength together with the hopping imbalance between the components exhibit distinct features in the quantum walk for different initial states. When the walkers are initially on the same site, both the slow and fast particles perform independent particle quantum walks when the int…
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We investigate the two-component quantum walk in one-dimensional lattice. We show that the inter-component interaction strength together with the hopping imbalance between the components exhibit distinct features in the quantum walk for different initial states. When the walkers are initially on the same site, both the slow and fast particles perform independent particle quantum walks when the interaction between them is weak. However, stronger inter-particle interactions result in quantum walks by the repulsively bound pair formed between the two particles. For different initial states when the walkers are on different sites initially, the quantum walk performed by the slow particle is almost independent of that of the fast particle, which exhibits reflected and transmitted components across the particle with large hopping strength for weak interactions. Beyond a critical value of the interaction strength, the wave function of the fast particle ceases to penetrate through the slow particle signalling a spatial phase separation. However, when the two particles are initially at the two opposite edges of the lattice, then the interaction facilitates the complete reflection of both of them from each other. We analyze the above mentioned features by examining various physical quantities such as the on-site density evolution, two-particle correlation functions and transmission coefficients.
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Submitted 12 October, 2021; v1 submitted 25 August, 2020;
originally announced August 2020.