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Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: influence on indirect exciton diffusion
Authors:
Benjamin Damilano,
Rémi Aristégui,
Henryk Teisseyre,
Stéphane Vézian,
Vincent Guigoz,
Aimeric Courville,
Ileana Florea,
Philippe Vennéguès,
Michal Bockowski,
Thierry Guillet,
Maria Vladimirova
Abstract:
GaN/AlxGa1-xN quantum wells were grown by molecular beam epitaxy on high quality bulk (0001) GaN substrates. The quantum well thickness was set in the 6-8 nm range to favor the photoluminescence emission of indirect excitons. Indeed, such excitons are known to be spatially indirect, due to the presence of the internal electric field which spatially separates the electron and hole wave functions. T…
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GaN/AlxGa1-xN quantum wells were grown by molecular beam epitaxy on high quality bulk (0001) GaN substrates. The quantum well thickness was set in the 6-8 nm range to favor the photoluminescence emission of indirect excitons. Indeed, such excitons are known to be spatially indirect, due to the presence of the internal electric field which spatially separates the electron and hole wave functions. The growth conditions were optimized in view of minimizing the photoluminescence peak broadening. In particular, the impact of growth temperature (up to 900°C) on the surface morphology, structural and photoluminescence properties was studied. The diffusion of indirect excitons on the scale of tens of microns was measured with a micro-photoluminescence setup equipped with a spatially resolved detection. A dedicated model and its analysis allow us to extract from these measurements the exciton diffusion constant and to conclude on the optimum growth conditions for the GaN/AlxGa1-xN quantum well structures suited for studies of quantum collective effects in indirect exciton liquids.
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Submitted 20 October, 2023;
originally announced October 2023.
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Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layered graphene and nickel/gold films
Authors:
R. Aristegui,
P. Lefebvre,
C. Brimont,
T. Guillet,
M. Vladimirova,
I. Paradisanos,
C. Robert,
X. Marie,
B. Urbaszek,
S. Chenot,
Y. Cordier,
B. Damilano
Abstract:
Excitons hosted by GaN/(Al,Ga)N quantum wells (QWs) are spatially indirect due to the giant built-in electric field that separates electrons and holes along the growth direction. This electric field, and thus exciton energy, can be reduced by depositing metallic layers on the sample surface. Using spatially-resolved micro-photoluminescence spectroscopy we compare the effects of two different mater…
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Excitons hosted by GaN/(Al,Ga)N quantum wells (QWs) are spatially indirect due to the giant built-in electric field that separates electrons and holes along the growth direction. This electric field, and thus exciton energy, can be reduced by depositing metallic layers on the sample surface. Using spatially-resolved micro-photoluminescence spectroscopy we compare the effects of two different materials, Nickel/Gold (NiAu) and few-layered graphene (FLG), on the potential landscape experienced by the excitons. We are able to (i) determine the potential barriers imposed on QW excitons by deposition of FLG and NiAu to be $14$ and $82$~meV, respectively, and (ii) to evidence their impact on the exciton transport at appropriate densities. Optical losses and inhomogeneous broadening induced by deposition of NiAu and FLG layers are similar, and their joined implementation constitute a promising tool for electrostatic modulation of IX densities even in the absence of any applied electric bias.
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Submitted 7 June, 2023;
originally announced June 2023.
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Electrical control of excitons in GaN/(Al,Ga)N quantum wells
Authors:
R. Aristegui,
F. Chiaruttini,
B. Jouault,
P. Lefebvre,
C. Brimont,
T. Guillet,
M. Vladimirova,
S. Chenot,
Y. Cordier,
B. Damilano
Abstract:
A giant built-in electric field in the growth direction makes excitons in wide GaN/(Al, Ga)N quantum wells spatially indirect even in the absence of any external bias. Significant densities of indirect excitons can accumulate in electrostatic traps imprinted in the quantum well plane by a thin metal layer deposited on top of the heterostructure. By jointly measuring spatially-resolved photolumines…
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A giant built-in electric field in the growth direction makes excitons in wide GaN/(Al, Ga)N quantum wells spatially indirect even in the absence of any external bias. Significant densities of indirect excitons can accumulate in electrostatic traps imprinted in the quantum well plane by a thin metal layer deposited on top of the heterostructure. By jointly measuring spatially-resolved photoluminescence and photo-induced current, we demonstrate that exciton density in the trap can be controlled via an external electric bias, which is capable of altering the trap depth. Application of a negative bias deepens the trapping potential, but does not lead to any additional accumulation of excitons in the trap. This is due to exciton dissociation instigated by the lateral electric field at the electrode edges. The resulting carrier losses are detected as an increased photo-current and reduced photoluminescence intensity. By contrast, application of a positive bias washes out the electrode-induced trapping potential. Thus, excitons get released from the trap and recover free propagation in the plane that we reveal by spatially-resolved photoluminescence.
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Submitted 25 March, 2022;
originally announced March 2022.
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Probing nanoscale thermal transport with cathodoluminescence thermometry
Authors:
Kelly W. Mauser,
Magdalena Solà-Garcia,
Matthias Liebtrau,
Benjamin Damilano,
Pierre-Marie Coulon,
Stéphane Vézian,
Philip Shields,
Sophie Meuret,
Albert Polman
Abstract:
Thermal properties have an outsized impact on efficiency and sensitivity of devices with nanoscale structures, such as in integrated electronic circuits. A number of thermal conductivity measurements for semiconductor nanostructures exist, but are hindered by the diffraction limit of light, the need for transducer layers, the slow-scan rate of probes, ultra-thin sample requirements, or extensive f…
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Thermal properties have an outsized impact on efficiency and sensitivity of devices with nanoscale structures, such as in integrated electronic circuits. A number of thermal conductivity measurements for semiconductor nanostructures exist, but are hindered by the diffraction limit of light, the need for transducer layers, the slow-scan rate of probes, ultra-thin sample requirements, or extensive fabrication. Here, we overcome these limitations by extracting temperature from measurements of bandgap cathodoluminescence in GaN nanowires with spatial resolution limited by the electron cascade, and use this to determine thermal conductivities in the range of 19-68 W/m*K in three new ways. The electron beam acts simultaneously as a temperature probe and as a controlled delta-function-like heat source to measure thermal conductivities using steady-state methods, and we introduce a frequency-domain method using pulsed electron beam excitation. The different thermal conductivity measurements we explore agree within error where comparable. Our results provide novel methods of measuring thermal properties that allow for rapid, in-situ, high-resolution measurements of integrated circuits and semiconductor nanodevices, and open the door for electron-beam based nanoscale phonon transport studies.
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Submitted 29 December, 2020;
originally announced December 2020.
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Complexity of dipolar exciton Mott transition in GaN/(AlGa)N nanostructures
Authors:
F. Chiaruttini,
T. Guillet,
C. Brimont,
D. Scalbert,
S. Cronenberger,
B. Jouault,
P. Lefebvre,
B. Damilano,
M. Vladimirova
Abstract:
The Mott transition from a dipolar excitonic liquid to an electron-hole plasma is demonstrated in a wide GaN/(Al,Ga)N quantum well at $T=7$K by means of spatially-resolved magneto-photoluminescence spectroscopy. Increasing optical excitation density we drive the system from the excitonic state, characterized by a diamagnetic behavior and thus a quadratic energy dependence on the magnetic field, to…
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The Mott transition from a dipolar excitonic liquid to an electron-hole plasma is demonstrated in a wide GaN/(Al,Ga)N quantum well at $T=7$K by means of spatially-resolved magneto-photoluminescence spectroscopy. Increasing optical excitation density we drive the system from the excitonic state, characterized by a diamagnetic behavior and thus a quadratic energy dependence on the magnetic field, to the unbound electron-hole state, characterized by a linear shift of the emission energy with the magnetic field. The complexity of the system requires to take into account both the density-dependence of the exciton binding energy and the exciton-exciton interaction and correlation energy that are of the same order of magnitude. We estimate the carrier density at Mott transition as $n_\mathrm{Mott}\approx 2\times 10^{11}$cm$^{-2}$ and address the role played by excitonic correlations in this process. Our results strongly rely on the spatial resolution of the photoluminescence and the assessment of the carrier transport. We show, that in contrast to GaAs/(Al,Ga)As systems, where transport of dipolar magnetoexcitons is strongly quenched by the magnetic field due to exciton mass enhancement, in GaN/(Al,Ga)N the band parameters are such that the transport is preserved up to $9$T.
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Submitted 16 October, 2020;
originally announced October 2020.
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Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics
Authors:
F. Chiaruttini,
T. Guillet,
C. Brimont,
B. Jouault,
P. Lefebvre,
S. Chenot,
Y. Cordier,
B. Damilano,
M. Vladimirova
Abstract:
Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising realization of dipolar excitons. We demonstrate the in-plane confinement and cooling of these excitons, when trapped in the electrostatic potential created by semitransparent electrodes of various shapes deposited on the…
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Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising realization of dipolar excitons. We demonstrate the in-plane confinement and cooling of these excitons, when trapped in the electrostatic potential created by semitransparent electrodes of various shapes deposited on the sample surface. This result is a prerequisite for the electrical control of the exciton densities and fluxes, as well for studies of the complex phase diagram of these dipolar bosons at low temperature.
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Submitted 8 February, 2019;
originally announced February 2019.
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AlN interlayer to improve the epitaxial growth of SmN on GaN (0001)
Authors:
Stéphane Vézian,
Benjamin Damilano,
Franck Natali,
Mohamed Al Khalfioui,
Jean Massies
Abstract:
An in situ study of the epitaxial growth of SmN thin films on Ga-polar GaN (0001)templates by molecular beam epitaxy is reported. Using X-ray photoelectron spectroscopy we found that Ga segregates at the surface during the first stages of growth. We showed that the problem related to Ga surface segregation can be simply suppressed by growing a few monolayers of AlN before starting the SmN growth.…
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An in situ study of the epitaxial growth of SmN thin films on Ga-polar GaN (0001)templates by molecular beam epitaxy is reported. Using X-ray photoelectron spectroscopy we found that Ga segregates at the surface during the first stages of growth. We showed that the problem related to Ga surface segregation can be simply suppressed by growing a few monolayers of AlN before starting the SmN growth. This results in a significant improvement of the crystallinity of SmN thin films assessed by X-ray diffraction.
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Submitted 7 April, 2016;
originally announced April 2016.
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Highly resistive epitaxial Mg-doped GdN thin films
Authors:
C. -M. Lee,
H. Warring,
S. Vézian,
B. Damilano,
S. Granville,
M. Al Khalfioui,
Y. Cordier,
H. J. Trodahl,
B. J. Ruck,
F. Natali
Abstract:
We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional doping with magnesium. Mg-doped GdN layers with resistivities of 1000 Ω.cm and carrier concentrations of 10E16 cm-3 are obtained for films with Mg concentrations up to 5 x 10E19 atoms/cm3. X-ray diffraction rocking curves indicate that Mg-doped GdN films have crystalline quality very similar to undoped GdN fi…
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We report the growth by molecular beam epitaxy of highly resistive GdN, using intentional doping with magnesium. Mg-doped GdN layers with resistivities of 1000 Ω.cm and carrier concentrations of 10E16 cm-3 are obtained for films with Mg concentrations up to 5 x 10E19 atoms/cm3. X-ray diffraction rocking curves indicate that Mg-doped GdN films have crystalline quality very similar to undoped GdN films, showing that the Mg doping did not affect the structural properties of the films. A decrease of the Curie temperature with decreasing the electron density is observed, supporting a recently suggested magnetic polaron scenario [F. Natali et al., Phys. Rev. B 87, 035202 (2013)].
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Submitted 29 October, 2014;
originally announced October 2014.
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The role of magnetic polarons in ferromagnetic GdN
Authors:
Franck Natali,
Ben Ruck,
Joe Trodahl,
Do Le Binh,
Stephane Vezian,
Benjamin Damilano,
Yvon Cordier,
Fabrice Semond,
Claire Meyer
Abstract:
We report an interplay between magnetism and charge transport in the ferromagnetic semiconductor GdN, pointing to the formation of magnetic polarons centred on nitrogen vacancies. The scenario goes some way to resolving a long-standing disagreement between the measured and predicted Curie temperature in GdN. It further constitutes an extension of concepts that relate closely to the behaviour of fe…
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We report an interplay between magnetism and charge transport in the ferromagnetic semiconductor GdN, pointing to the formation of magnetic polarons centred on nitrogen vacancies. The scenario goes some way to resolving a long-standing disagreement between the measured and predicted Curie temperature in GdN. It further constitutes an extension of concepts that relate closely to the behaviour of ferromagnetic semiconductors generally, and EuO in particular.
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Submitted 12 October, 2012;
originally announced October 2012.
