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Dimensionality Enhanced Out-of-Plane Spin Currents in NbIrTe$_4$ for Efficient Field-Free Switching of Perpendicular Magnetization
Authors:
Wei Yang,
Xinhe Wang,
Jianing Liu,
Daming Zhou,
Xiaoyang Lin,
Ke Zhang,
Heloise Damas,
Xinyue Wang,
Xianyang Lu,
Haozhe Yang,
Stephane Mangin,
Sebastien Petit-Watelot,
Michel Hehn,
Albert Fert,
Juan-Carlos Rojas-Sanchez,
Weisheng Zhao
Abstract:
Efficient generation of out-of-plane (OOP) spin currents is crucial for advanced spintronic memory applications. However, the theoretical understanding and experimental implementation of robust OOP spin currents for high-density and low-power magnetization switching remain significant challenges of spintronics. Here, we demonstrate that transitioning NbIrTe$_4$ from a two-dimensional quantum spin…
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Efficient generation of out-of-plane (OOP) spin currents is crucial for advanced spintronic memory applications. However, the theoretical understanding and experimental implementation of robust OOP spin currents for high-density and low-power magnetization switching remain significant challenges of spintronics. Here, we demonstrate that transitioning NbIrTe$_4$ from a two-dimensional quantum spin Hall insulator to a three-dimensional type-II Weyl semimetal markedly enhances OOP spin current generation. The bulk topological Weyl semimetal nature of NbIrTe$_4$, characterized by its Weyl cone, significantly enhances the OOP spin Berry curvature, enabling an unprecedented OOP spin Hall conductivity exceeding $10^5\hbar/2e$ $Ω^{-1}m^{-1} $. This enhancement, surpassing the in-plane component by more than fourfold, enables efficient and field-free spin-orbit torque (SOT) switching of perpendicular magnetization with a low current density of 1.4 MA/cm$^2$. The improved spin Hall conductivity reduces the overall power consumption by more than two orders of magnitude compared to existing systems, such as heavy metals. Our findings highlight the pivotal role of dimensionality in harnessing robust OOP spin currents in topological Weyl semimetals, paving the way for the development of high-density, low-power spintronic memory technologies.
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Submitted 7 April, 2025;
originally announced April 2025.
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Energy-efficient picosecond spin-orbit torque magnetization switching in ferro- and ferrimagnetic films
Authors:
Eva Díaz,
Alberto Anadón,
Pablo Olleros-Rodríguez,
Harjinder Singh,
Héloïse Damas,
Paolo Perna,
Martina Morassi,
Aristide Lemaître,
Michel Hehn,
Jon Gorchon
Abstract:
Electrical current pulses can be used to manipulate magnetization efficiently via spin-orbit torques (SOTs). Pulse durations as short as a few picoseconds have been used to switch the magnetization of ferromagnetic films, reaching the THz regime. However, little is known about the reversal mechanisms and energy requirements in the ultrafast switching regime. In this work, we quantify the energy co…
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Electrical current pulses can be used to manipulate magnetization efficiently via spin-orbit torques (SOTs). Pulse durations as short as a few picoseconds have been used to switch the magnetization of ferromagnetic films, reaching the THz regime. However, little is known about the reversal mechanisms and energy requirements in the ultrafast switching regime. In this work, we quantify the energy cost for magnetization reversal over 7 orders of magnitude in pulse duration, in both ferromagnetic and ferrimagnetic samples, bridging quasi-static spintronics and femtomagnetism. To this end, we develop a method to stretch picosecond pulses generated by a photoconductive switch by an order of magnitude. Thereby, we can create current pulses from picoseconds to durations approaching pulse width available with commercial instruments. We show that the energy cost for SOT switching decreases by more than an order of magnitude in all samples when the pulse duration enters the picosecond range. We project an energy cost of 9 fJ for a 100 x 100 nm 2 ferrimagnetic device. Micromagnetic and macrospin simulations unveil a transition from a non-coherent to a coherent magnetization reversal with a strong modification of the magnetization dynamical trajectories as pulse duration is reduced. Our results cement the potential for high-speed magnetic spin-orbit torque memories and highlights alternative magnetization reversal pathways at fast time scales.
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Submitted 1 October, 2024;
originally announced October 2024.
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Self-induced spin pumping and inverse spin Hall effect in single FePt thin films
Authors:
J. L. Ampuero,
A. Anadón,
H. Damas,
J. Ghanbaja,
S. Petit-Watelot,
J. -C. Rojas-Sánchez,
D. Velázquez Rodriguez,
J. E. Gómez,
A. Butera,
L. Avilés-Félix
Abstract:
In this study, we investigate the spin-charge current conversion characteristics of chemically disordered ferromagnetic single FePt thin films by spin-pumping ferromagnetic resonance experiments performed on both a resonance cavity and on patterned devices. We clearly observe a self-induced signal in a single FePt layer. The sign of a single FePt spin pumping voltage signal is consistent with a ty…
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In this study, we investigate the spin-charge current conversion characteristics of chemically disordered ferromagnetic single FePt thin films by spin-pumping ferromagnetic resonance experiments performed on both a resonance cavity and on patterned devices. We clearly observe a self-induced signal in a single FePt layer. The sign of a single FePt spin pumping voltage signal is consistent with a typical bilayer with a positive spin Hall angle layer such as that of Pt on top of a ferromagnet (FM), substrate//FM/Pt. Structural analysis shows a strong composition gradient due to natural oxidation at both FePt interfaces, with the Si substrate and with the air. The FePt-thickness dependence of the self-induced charge current produced allowed us to obtain $λ_ \text{FePt}=(1.5\pm 0.1)$ nm and self-induced $θ_ \text{self-FePt}=0.047 \pm 0.003$, with efficiency for reciprocal effects applications $θ_ \text{self-FePt} \times λ_ \text{FePt} = 0.071$ nm which is comparable to that of Pt, $θ_ \text{SH-Pt} \times λ_ \text{Pt} = 0.2$ nm. Moreover, by studying bilayer systems such as Si//FePt/Pt and Si//Pt//FePt we independently could extract the individual contributions of the external inverse spin Hall effect of Pt and the self-induced inverse spin Hall effect of FePt. Notably, this method gives consistent values of charge currents produced due to only self-induced inverse spin Hall effect in FePt layers. These results advance our understanding of spin-to-charge interconversion mechanisms in composite thin films and pave the way for the development of next-generation spintronics devices based on self-torque.
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Submitted 9 February, 2025; v1 submitted 20 May, 2024;
originally announced May 2024.
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Spin transport properties of spinel vanadate-based heterostructures
Authors:
Antonio Peña Corredor,
Alberto Anadón,
Laurent Schlur,
Jérôme Robert,
Héloïse Damas,
Juan-Carlos Rojas-Sánchez,
Sébastien Petit-Watelot,
Nathalie Viart,
Daniele Preziosi,
Christophe Lefevre
Abstract:
Spin-orbit coupling and breaking of inversion symmetry are necessary ingredients to enable a pure spin current-based manipulation of the magnetization via the spin-orbit torque effect. Currently, magnetic insulator oxides with non-dissipative characteristics are being explored. When combined with non-magnetic heavy metals, known for their large spin-orbit coupling, they offer promising potential f…
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Spin-orbit coupling and breaking of inversion symmetry are necessary ingredients to enable a pure spin current-based manipulation of the magnetization via the spin-orbit torque effect. Currently, magnetic insulator oxides with non-dissipative characteristics are being explored. When combined with non-magnetic heavy metals, known for their large spin-orbit coupling, they offer promising potential for energy-efficient spin-orbitronics applications. The intrinsic electronic correlations characterizing those strongly correlated oxides hold the promises to add extra control-knobs to the desired efficient spin-wave propagation and abrupt magnetization switching phenomena. Spinel vanadate FeV2O4 (FVO) exhibits several structural phase transitions which are accompanied by an intricate interplay of magnetic, charge and orbital orderings. When grown as a thin film onto SrTiO3, the compressive strain state induces a perpendicular magnetic anisotropy, making FVO-based heterostructures desirable for spin-orbitronics applications. In this study, we have optimised the deposition of stoichiometric and epitaxial Pt/FVO heterostructures by Pulsed Laser Deposition and examined their spin-related phenomena. From angle-dependent magnetotransport measurements, we observed both Anisotropic Magnetoresistance (AMR) and Spin Hall Magnetoresistance (SMR) effects. Our findings show the SMR component as the primary contributor to the overall magnetoresistance, whose high value of 0.12% is only comparable to properly optimized oxide-based systems.
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Submitted 10 July, 2023;
originally announced July 2023.
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Thermal spin current generation in the multifunctional ferrimagnet Ga$_{0.6}$Fe$_{1.4}$O$_{3}$
Authors:
Alberto Anadón,
Elodie Martin,
Suvidyakumar Homkar,
Benjamin Meunier,
Maxime Verges,
Heloise Damas,
Junior Alegre,
Christophe Lefevre,
Francois Roulland,
Carsten Dubs,
Morris Lindner,
Ludovic Pasquier,
Olivier Copie,
Karine Dumesnil,
Rafael Ramos,
Daniele Preziosi,
Sébastien Petit-Watelot,
Nathalie Viart,
Juan-Carlos Rojas-Sánchez
Abstract:
In recent years, multifunctional materials have attracted increasing interest for magnetic memories and energy harvesting applications. Magnetic insulating materials are of special interest for this purpose, since they allow the design of more efficient devices due to the lower Joule heat losses. In this context, Ga$_{0.6}$Fe$_{1.4}$O$_3$ (GFO) is a good candidate for spintronics applications, sin…
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In recent years, multifunctional materials have attracted increasing interest for magnetic memories and energy harvesting applications. Magnetic insulating materials are of special interest for this purpose, since they allow the design of more efficient devices due to the lower Joule heat losses. In this context, Ga$_{0.6}$Fe$_{1.4}$O$_3$ (GFO) is a good candidate for spintronics applications, since it can exhibit multiferroicity and presents a spin Hall magnetoresistance similar to the one observed in a yttrium iron garnet (YIG)/Pt bilayer. Here, we explore GFO utilizing thermo-spin measurements in an on-chip approach. By carefully considering the geometry of our thermo-spin devices we are able to quantify the spin Seebeck effect and the spin current generation in a GFO/Pt bilayer, obtaining a value comparable to that of YIG/Pt. This further confirms the promises of an efficient spin current generation with the possibility of an electric-field manipulation of the magnetic properties of the system in an insulating ferrimagnetic material.
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Submitted 3 July, 2022; v1 submitted 27 June, 2022;
originally announced June 2022.
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Ferrimagnet GdFeCo characterization for spin-orbitronics: large field-like and damping-like torques
Authors:
Héloïse Damas,
Alberto Anadon,
David Céspedes-Berrocal,
Junior Alegre-Saenz,
Jean-Loïs Bello,
Aldo Arriola-Córdova,
Sylvie Migot,
Jaafar Ghanbaja,
Olivier Copie,
Michel Hehn,
Vincent Cros,
Sébastien Petit-Watelot,
Juan-Carlos Rojas-Sánchez
Abstract:
Spintronics is showing promising results in the search for new materials and effects to reduce energy consumption in information technology. Among these materials, ferrimagnets are of special interest, since they can produce large spin currents that trigger the magnetization dynamics of adjacent layers or even their own magnetization. Here, we present a study of the generation of spin current by G…
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Spintronics is showing promising results in the search for new materials and effects to reduce energy consumption in information technology. Among these materials, ferrimagnets are of special interest, since they can produce large spin currents that trigger the magnetization dynamics of adjacent layers or even their own magnetization. Here, we present a study of the generation of spin current by GdFeCo in a GdFeCo/Cu/NiFe trilayer where the FeCo sublattice magnetization is dominant at room temperature. Magnetic properties such as the saturation magnetization are deduced from magnetometry measurements while damping constant is estimated from spin-torque ferromagnetic resonance (ST-FMR). We show that the overall damping-like (DL) and field-like (FL) effective fields as well as the associated spin Hall angles can be reliably obtained by performing the dependence of ST-FMR by an added dc current. The sum of the spin Hall angles for both the spin Hall effect (SHE) and the spin anomalous Hall effect (SAHE) symmetries are: $θ_{DL}^{SAHE} + θ_{DL}^{SHE}=-0.15 \pm 0.05$ and $θ_{FL}^{SAHE} + θ_{FL}^{SHE}=0.026 \pm 0.005$. From the symmetry of ST-FMR signals we find that $θ_{DL}^{SHE}$ is positive and dominated by the negative $θ_{DL}^{SAHE}$. The present study paves the way for tuning the different symmetries in spin conversion in highly efficient ferrimagnetic systems.
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Submitted 20 April, 2022;
originally announced April 2022.
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Current-induced spin torques on single GdFeCo magnetic layers
Authors:
David Céspedes-Berrocal,
Heloïse Damas,
Sébastien Petit-Watelot,
David Maccariello,
Ping Tang,
Aldo Arriola-Córdova,
Pierre Vallobra,
Yong Xu,
Jean-Loïs Bello,
Elodie Martin,
Sylvie Migot,
Jaafar Ghanbaja,
Shufeng Zhang,
Michel Hehn,
Stéphane Mangin,
Christos Panagopoulos,
Vincent Cros,
Albert Fert,
Juan-Carlos Rojas-Sánchez
Abstract:
Spintronics exploits spin-orbit coupling (SOC) to generate spin currents, spin torques, and, in the absence of inversion symmetry, Rashba, and Dzyaloshinskii-Moriya interactions (DMI). The widely used magnetic materials, based on 3d metals such as Fe and Co, possess a small SOC. To circumvent this shortcoming, the common practice has been to utilize the large SOC of nonmagnetic layers of 5d heavy…
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Spintronics exploits spin-orbit coupling (SOC) to generate spin currents, spin torques, and, in the absence of inversion symmetry, Rashba, and Dzyaloshinskii-Moriya interactions (DMI). The widely used magnetic materials, based on 3d metals such as Fe and Co, possess a small SOC. To circumvent this shortcoming, the common practice has been to utilize the large SOC of nonmagnetic layers of 5d heavy metals (HMs), such as Pt, to generate spin currents by Spin Hall Effect (SHE) and, in turn, exert spin torques on the magnetic layers. Here, we introduce a new class of material architectures, excluding nonmagnetic 5d HMs, for high-performance spintronics operations. We demonstrate very strong current-induced torques exerted on single GdFeCo layers due to the combination of large SOC of the Gd 5d states, and inversion symmetry breaking mainly engineered by interfaces. These "self-torques" are enhanced around the magnetization compensation temperature (close to room temperature) and can be tuned by adjusting the spin absorption outside the GdFeCo layer. In other measurements, we determine the very large emission of spin current from GdFeCo. This material platform opens new perspectives to exert "self-torques" on single magnetic layers as well as to generate spin currents from a magnetic layer.
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Submitted 18 October, 2020;
originally announced October 2020.
