Showing 1–5 of 5 results for author: Dall'Agnol, F F

Field emitter electrostatics: a review with special emphasis on modern high-precision finite-element modelling

Authors: Thiago A. de Assis, Fernando F. Dall'Agnol, Richard G. Forbes

Abstract: This review of quantitative field emitter electrostatics, covering analytical, numerical and fitted-formula approaches, is thought the first of its kind. The review relates chiefly to situations where emitters operate in an electronically ideal manner, and zero-current electrostatics is applicable. Terminology is carefully described and is polarity independent; thus the review applies to both fiel… ▽ More This review of quantitative field emitter electrostatics, covering analytical, numerical and fitted-formula approaches, is thought the first of its kind. The review relates chiefly to situations where emitters operate in an electronically ideal manner, and zero-current electrostatics is applicable. Terminology is carefully described and is polarity independent; thus the review applies to both field electron and field ion emitters. It also applies more generally to charged, pointed electron-conductors that exhibit the "electrostatic lightning-rod effect", but are poorly discussed in general electricity and magnetism literature. Modern electron-conductor electrostatics is an application of the chemical thermodynamics and statistical mechanics of electrons. The review focuses chiefly on the electrostatics of two common basic emitter forms: the needle-shaped emitters used in traditional projection technologies; and the post-shaped emitters often used in modelling large-area multi-emitter electron sources. In the post-on-plane context, we consider in detail both the electrostatics of the single post and the interaction between two identical posts that occurs as a result of electrostatic depolarization (often called "screening" or "shielding"). Core to the review are discussions of the "minimum domain dimensions" method for implementing effective finite-element-method electrostatic simulations, and of the variant that leads to very precise estimates of dimensionless field enhancement factors (error typically less than 0.001 % in situations where analytical comparisons exist). Brief outline discussions, and core references, are given for each of many "related considerations" that are relevant to the electrostatic situations, methods and results described. Many areas of field emitter electrostatics are suggested where further research and/or separate mini-reviews would probably be useful. △ Less

Submitted 18 June, 2022; originally announced June 2022.

Comments: 39 pages, 24 figures. Invited Review, submitted for refereeing

Journal ref: J. Phys.: Condens. Matter 34, 493001 (2022). (Open Access)

Minimal domain size necessary to simulate the field enhancement factor numerically with specified precision

Authors: Thiago A. de Assis, Fernando F. Dall'Agnol

Abstract: In the literature about field emission, finite elements and finite differences techniques are being increasingly employed to understand the local field enhancement factor (FEF) via numerical simulations. In theoretical analyses, it is usual to consider the emitter as isolated, i.e, a single tip field emitter infinitely far from any physical boundary, except the substrate. However, simulation domai… ▽ More In the literature about field emission, finite elements and finite differences techniques are being increasingly employed to understand the local field enhancement factor (FEF) via numerical simulations. In theoretical analyses, it is usual to consider the emitter as isolated, i.e, a single tip field emitter infinitely far from any physical boundary, except the substrate. However, simulation domains must be finite and the simulation boundaries influences the electrostatic potential distribution. In either finite elements or finite differences techniques, there is a systematic error ($ε$) in the FEF caused by the finite size of the simulation domain. It is attempting to oversize the domain to avoid any influence from the boundaries, however, the computation might become memory and time consuming, especially in full three dimensional analyses. In this work, we provide the minimum width and height of the simulation domain necessary to evaluate the FEF with $ε$ at the desired tolerance. The minimum width ($A$) and height ($B$) are given relative to the height of the emitter ($h$), that is, $(A/h)_{min} \times (B/h)_{min}$ necessary to simulate isolated emitters on a substrate. We also provide the $(B/h)_{min}$ to simulate arrays and the $(A/h)_{min}$ to simulate an emitter between an anode-cathode planar capacitor. At last, we present the formulae to obtain the minimal domain size to simulate clusters of emitters with precision $ε_{tol}$. Our formulae account for ellipsoidal emitters and hemisphere on cylindrical posts. In the latter case, where an analytical solution is not known at present, our results are expected to produce an unprecedented numerical accuracy in the corresponding local FEF. △ Less

Submitted 3 July, 2018; originally announced July 2018.

Physics-based derivation of a formula for the mutual depolarization of two post-like field emitters

Authors: Fernando F. Dall'Agnol, Thiago A. de Assis, Richard G. Forbes

Abstract: Recent analyses of the field enhancement factor (FEF) from multiple emitters have revealed that the depolarization effect is more persistent with respect to the separation between the emitters than originally assumed. It has been shown that, at sufficiently large separations, the fractional reduction of the FEF decays with the inverse cube power of separation, rather than exponentially. The behavi… ▽ More Recent analyses of the field enhancement factor (FEF) from multiple emitters have revealed that the depolarization effect is more persistent with respect to the separation between the emitters than originally assumed. It has been shown that, at sufficiently large separations, the fractional reduction of the FEF decays with the inverse cube power of separation, rather than exponentially. The behavior of the fractional reduction of the FEF encompassing both the range of technological interest $0<c/h\lesssim5$ ($c$ being the separation and $h$ is the height of the emitters) and $c\rightarrow\infty$, has not been predicted by the existing formulas in field emission literature, for post-like emitters of any shape. In this letter, we use first principles to derive a simple two-parameter formula for fractional reduction that can be of interest for experimentalists to modeling and interpret the FEF from small clusters of emitters or arrays in small and large separations. For the structures tested, the agreement between numerical and analytical data is $\sim1\%$. △ Less

Submitted 2 July, 2018; originally announced July 2018.

Journal ref: J. Phys.: Condens. Matter 30, 375703 (2018)

Origin of the literature discrepancies in the fractional reduction of the apex-field enhancement factor considering small clusters of field emitters

Authors: Thiago A. de Assis, Fernando F. Dall'Agnol

Abstract: Numerical simulations are important when assessing the many characteristics of field emission related phenomena. In small simulation domains, the electrostatic effect from the boundaries is known to influence the calculated apex field enhancement factor (FEF) of the emitter, but no established dependence has been reported at present. In this work, we report the dependence of the lateral size, $L$,… ▽ More Numerical simulations are important when assessing the many characteristics of field emission related phenomena. In small simulation domains, the electrostatic effect from the boundaries is known to influence the calculated apex field enhancement factor (FEF) of the emitter, but no established dependence has been reported at present. In this work, we report the dependence of the lateral size, $L$, and the height, $H$, of the simulation domain on the apex-FEF of a single conducting ellipsoidal emitter. Firstly, we analyze the error, $\varepsilon$, in the calculation of the apex-FEF as a function of $H$ and $L$. Importantly, our results show that the effects of $H$ and $L$ on $\varepsilon$ are scale invariant, allowing one to predict $\varepsilon$ for ratios $L/h$ and $H/h$, where $h$ is the height of the emitter. Next, we analyze the fractional change of the apex-FEF, $δ$, from a single emitter, $γ_1$, and a pair, $γ_2$. We show that small relative errors in $γ_1$ (i.e., $\varepsilon\approx0.5\%$), due to the finite domain size, are sufficient to alter the functional dependence $δ(c)$, where $c$ is the distance from the emitters in the pair. We show that $δ(c)$ obeys a recently proposed power law decay in the limit of infinite domain size ($\varepsilon=0$, say), in contrast to a long time established exponential decay. Thus, power law functional dependence, $-δ\sim c^{-n}$, with $n=3$, is suggested to be a universal signature of the charge-blunting effect, at sufficient large distances between similar emitters with any shape. These results explain the origin of the discrepancies in the literature and improves the scientific understanding of the field electron emission theory, for accurate characterization of emitters in small clusters or arrays. △ Less

Submitted 31 January, 2018; v1 submitted 1 November, 2017; originally announced November 2017.

Nanostructures mechanically stable with desirable characteristic field enhancement factor: a response from scale invariance in electrostatics

Authors: Thiago A. de Assis, Fernando F. Dall'Agnol

Abstract: This work presents an accurate numerical study of the electrostatics of systems formed by individual nanostructure mounted on support substrate tip, a theoretical prototype for applications in field electron emission or for construction of tips in probe microscopy requiring high resolution. We modeled substrate tip with height $h_1$, radius $r_{1}$ and characteristic field enhancement factor (FEF)… ▽ More This work presents an accurate numerical study of the electrostatics of systems formed by individual nanostructure mounted on support substrate tip, a theoretical prototype for applications in field electron emission or for construction of tips in probe microscopy requiring high resolution. We modeled substrate tip with height $h_1$, radius $r_{1}$ and characteristic field enhancement factor (FEF) $γ_1$, and the top nanostructure with height $h_2$, radius $r_{2}<r_{1}$ and FEF $γ_2$, both hemisphere on post-like structures. Then, nanostructure mounted on support substrate tip has characteristic FEF, $γ_{C}$. Defining the relative difference $η_R \equiv (γ_{C} - γ_{1})/ (γ_{3} - γ_{1})$, where $γ_{3}$ corresponds to reference FEF for a hemisphere on post structure with radius $r_3=r_2$ and height $h_3=h_1 + h_2$, our results suggest, from numerical solution of Laplace's equation using a finite element scheme, a scaling $η_R = f(u\equivλθ^{-1})$, where $λ\equiv h_{2}/h_1$ and $θ\equiv r_1/r_2$. Given a characteristic variable $u_{c}$, we found, for $u \ll u_{c}$, a power law $η_{R} \sim u^κ$ with $κ\approx 0.55$. For $u \gg u_{c}$, $η_{R} \approx 1$ providing conditions where $γ_C \rightarrow γ_3$. As a consequence of scaling invariance, it's possible to derive a simple expression for $γ_C$, being possible to predict conditions to produce related systems with a desirable FEF and that, at the same time, are mechanically stable by presence of substrate tip. Finally, we also discuss the validity of Schottky's conjecture (SC) for these systems showing that, while to obey SC is a indicative of scale invariance, the opposite is not necessarily satisfied. This suggest that a careful analysis must be done before attribute the SC as a origin of giant FEF in experiments. △ Less

Submitted 1 August, 2016; v1 submitted 25 July, 2016; originally announced July 2016.