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Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study
Authors:
Camilla Coletti,
Stiven Forti,
Alessandro Principi,
Konstantin V. Emtsev,
Alexei A. Zakharov,
Kevin M. Daniels,
Biplob K. Daas,
M. V. S. Chandrashekhar,
Thierry Ouisse,
Didier Chaussende,
Allan H. MacDonald,
Marco Polini,
Ulrich Starke
Abstract:
In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric field dependent electronic properties. However, a direct and well-resolved experimental visualization of its band structure has not yet been reported. In this work, we present angle resolved photoemission spectroscopy (ARPES) data which show with high resolution the electronic band structure of trila…
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In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric field dependent electronic properties. However, a direct and well-resolved experimental visualization of its band structure has not yet been reported. In this work, we present angle resolved photoemission spectroscopy (ARPES) data which show with high resolution the electronic band structure of trilayer graphene obtained on α-SiC(0001) and β-SiC(111) via hydrogen intercalation. Electronic bands obtained from tight-binding calculations are fitted to the experimental data to extract the interatomic hopping parameters for Bernal and rhombohedral stacked trilayers. Low energy electron microscopy (LEEM) measurements demonstrate that the trilayer domains extend over areas of tens of square micrometers, suggesting the feasibility of exploiting this material in electronic and photonic devices. Furthermore, our results suggest that on SiC substrates the occurrence of rhombohedral stacked trilayer is significantly higher than in natural bulk graphite.
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Submitted 28 February, 2014;
originally announced February 2014.
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Study of epitaxial graphene on non-polar 6H-SiC faces
Authors:
B. K. Daas,
K. Daniels,
S. Shetu,
T. S. Sudarshan,
M. V. S. Chandrashekhar
Abstract:
We present epitaxial graphene (EG) growth on non-polar a-plane and m-plane 6H-SiC faces where material characterization is compared with that known for EG grown on polar faces. Atomic force microscopy (AFM) surface morphology exhibits nanocrystalline graphite like features for non-polar faces, while the polar silicon face shows step like features. This differing behavior is attributed to the lack…
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We present epitaxial graphene (EG) growth on non-polar a-plane and m-plane 6H-SiC faces where material characterization is compared with that known for EG grown on polar faces. Atomic force microscopy (AFM) surface morphology exhibits nanocrystalline graphite like features for non-polar faces, while the polar silicon face shows step like features. This differing behavior is attributed to the lack of a hexagonal template on the non-polar faces. Non-polar faces also exhibit greater disorder and red shift of all Raman peaks (D, G and 2D) with increasing temperature. This is attributed to decreasing stress with increasing temperature. These variations provide evidence of different EG growth mechanisms on non-polar and polar faces, likely due to differences in surface free energy. We also present differences between a-plane EG and m-plane EG in terms of morphology, thickness and Raman characteristics
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Submitted 1 March, 2012;
originally announced March 2012.
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Molecular Gas Adsorption Induced Carrier Transport Studies of Epitaxial Graphene using IR Reflection Spectroscopy
Authors:
B. K. Daas,
W. K. Nomani,
K. M. Daniels,
T. S. Sudarshan,
Goutam Koley,
M. V. S. Chandrashekhar
Abstract:
We investigate molecular adsorption doping by electron withdrawing NO2 and electron donating NH3 on epitaxial graphene grown on C-face SiC substrates. Amperometric measurements show conductance changes upon introduction of molecular adsorbents on epitaxial graphene. Conductance changes are a trade-off between carrier concentration and scattering, and manifest at direct current and optical frequenc…
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We investigate molecular adsorption doping by electron withdrawing NO2 and electron donating NH3 on epitaxial graphene grown on C-face SiC substrates. Amperometric measurements show conductance changes upon introduction of molecular adsorbents on epitaxial graphene. Conductance changes are a trade-off between carrier concentration and scattering, and manifest at direct current and optical frequencies. We therefore investigate changes in the infrared (IR) reflection spectra to correlate these two frequency domains, as reflectance changes are due to a change of epitaxial graphene (EG) surface conductance. We match theory with experimental IR data and extract changes in carrier concentration and scattering due to gas adsorption. Finally, we separate the intraband and interband scattering contributions to the electronic transport under gas adsorption. The results indicate that, under gas adsorption, the influence of interband scattering cannot be neglected, even at DC.
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Submitted 23 January, 2012;
originally announced January 2012.
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Effect of crystallographic dislocations on the reverse performance of 4H-SiC p-n diodes
Authors:
Feng Zhao,
Mohammad M. Islam,
Biplob K. Daas,
Tangali S. Sudarshan
Abstract:
A quantitative study was performed to investigate the impact of crystallographic dislocation defects, 21 including screw dislocation, basal plane dislocation, and threading edge dislocation, and their locations in 22 active and JTE region, on the reverse performance of 4H-SiC p-n diodes. It was found that higher leakage 23 current in diodes is associated with basal plane dislocations, while lower…
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A quantitative study was performed to investigate the impact of crystallographic dislocation defects, 21 including screw dislocation, basal plane dislocation, and threading edge dislocation, and their locations in 22 active and JTE region, on the reverse performance of 4H-SiC p-n diodes. It was found that higher leakage 23 current in diodes is associated with basal plane dislocations, while lower breakdown voltage is attributed to 24 screw dislocations. The above influence increases in severity when the dislocation is in the active region than 25 in the JTE region. Furthermore, due to the closed-core nature, the impact of threading edge dislocation on the 26 reverse performance of the p-n diodes is less severe than that of other dislocations although its density is 27 much higher.
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Submitted 4 October, 2010;
originally announced October 2010.
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Doping Dependence of Thermal Oxidation on n-type 4H-SiC
Authors:
B. K. Daas,
M. M. Islam,
I. A. Chowdhury,
F. Zhao,
T. S. Sudarshan,
M. V. S. Chandrashekhar
Abstract:
The doping dependence of dry thermal oxidation rates in n-type 4H-SiC was investigated. The oxidation was performed in the temperature range 1000C to 1200C for samples with nitrogen doping in the range of 6.5e15/cm3 to 9.3e18/cm3, showing a clear doping dependence. Samples with higher doping concentrations displayed higher oxidation rates. The results were interpreted using a modified Deal-Grove m…
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The doping dependence of dry thermal oxidation rates in n-type 4H-SiC was investigated. The oxidation was performed in the temperature range 1000C to 1200C for samples with nitrogen doping in the range of 6.5e15/cm3 to 9.3e18/cm3, showing a clear doping dependence. Samples with higher doping concentrations displayed higher oxidation rates. The results were interpreted using a modified Deal-Grove model. Linear and parabolic rate constants and activation energies were extracted. Increasing nitrogen led to an increase in linear rate constant pre-exponential factor from 10-6m/s to 10-2m/s and the parabolic rate constant pre-exponential factor from 10e9m2/s to 10e6m2/s. The increase in linear rate constant was attributed to defects from doping-induced lattice mismatch, which tend to be more reactive than bulk crystal regions. The increase in the diffusion-limited parabolic rate constant was attributed to degradation in oxide quality originating from the doping-induced lattice mismatch. This degradation was confirmed by the observation of a decrease in optical density of the grown oxide films from 1.4 to 1.24. The linear activation energy varied from 1.6eV to 2.8eV, while the parabolic activation energy varied from 2.7eV to 3.3eV, increasing with doping concentration. These increased activation energies were attributed to higher nitrogen content, leading to an increase in effective bond energy stemming from the difference in C-Si (2.82eV) and Si-N (4.26eV) binding energies. This work provides crucial information in the engineering of SiO2 dielectrics for SiC MOS structures, which typically involve regions of very different doping concentrations, and suggests that thermal oxidation at high doping concentrations in SiC may be defect mediated.
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Submitted 4 October, 2010;
originally announced October 2010.
