Showing 1–4 of 4 results for author: Curé, Y

AlGaN/GaN asymmetric graded-index separate confinement heterostructures designed for electron-beam pumped UV lasers

Authors: Sergi Cuesta, Yoann Curé, Fabrice Donatini, Lou Denaix, Edith Bellet-Amalric, Catherine Bougerol, Vincent Grenier, Quang-Minh Thai, Gilles Nogues, Stephen T. Purcell, Le Si Dang, Eva Monroy

Abstract: We present a study of undoped AlGaN/GaN separate confinement heterostructures designed to operate as electron beam pumped ultraviolet lasers. We discuss the effect of spontaneous and piezoelectric polarization on carrier diffusion, comparing the results of cathodoluminescence with electronic simulations of the band structure and Monte Carlo calculations of the electron trajectories. Carrier collec… ▽ More We present a study of undoped AlGaN/GaN separate confinement heterostructures designed to operate as electron beam pumped ultraviolet lasers. We discuss the effect of spontaneous and piezoelectric polarization on carrier diffusion, comparing the results of cathodoluminescence with electronic simulations of the band structure and Monte Carlo calculations of the electron trajectories. Carrier collection is significantly improved using an asymmetric graded-index separate confinement heterostructure (GRINSCH). The graded layers avoid potential barriers induced by polarization differences in the heterostructure and serve as strain transition buffers which reduce the mosaicity of the active region and the linewidth of spontaneous emission. △ Less

Submitted 16 March, 2021; v1 submitted 6 January, 2021; originally announced January 2021.

Optical Determination of the Band Gap and Band Tail of Epitaxial Ag$_2$ZnSnSe$_4$ at Low Temperature

Authors: S. Perret, Y. Curé, L. Grenet, R. André, H. Mariette, J. Bleuse

Abstract: We report on the precise determination of both the band gap E$_\text{g}$, and the characteristic energy $U$ of the band tail of localized defect states, for monocrystalline Ag$_2$ZnSnSe$_4$. Both photoluminescence excitation and time-resolved photoluminescence studies lead to E$_\text{g} = 1223\pm3$ meV, and $U = 20\pm3$ meV, at 6 K. The interest of the methodology developed here is to account qua… ▽ More We report on the precise determination of both the band gap E$_\text{g}$, and the characteristic energy $U$ of the band tail of localized defect states, for monocrystalline Ag$_2$ZnSnSe$_4$. Both photoluminescence excitation and time-resolved photoluminescence studies lead to E$_\text{g} = 1223\pm3$ meV, and $U = 20\pm3$ meV, at 6 K. The interest of the methodology developed here is to account quantitatively for the time-resolved photoluminescence and photoluminescence excitation spectra by only considering standard textbook density of states, and state filling effects. Such an approach is different from the one most often used to evaluate the energy extent of the localized states, namely by measuring the energy shift between the photoluminescence emission and the excitation one -- the so-called Stokes shift. The advantage of the present method is that no arbitrary choice of the low power excitation has to be done to select the photoluminescence emission spectrum and its peak energy. △ Less

Submitted 7 July, 2020; originally announced July 2020.

Comments: 6 pages, 4 figures. Supplemental GIF file is the animated view over a large subset of the TRPL data (article ref. 29)

Journal ref: Phys. Rev. B 102, 195205 (2020)

Static strain tuning of quantum dots embedded in a photonic wire

Authors: D. Tumanov, N. Vaish, H. A. Nguyen, Y. Curé, J. -M. Gérard, J. Claudon, F. Donatini, J. -Ph. Poizat

Abstract: We use strain to statically tune the semiconductor band gap of individual InAs quantum dots (QDs) embedded in a GaAs photonic wire featuring very efficient single photon collection efficiency. Thanks to the geometry of the structure, we are able to shift the QD excitonic transition by more than 20 meV by using nano-manipulators to apply the stress. Moreover, owing to the strong transverse strain g… ▽ More We use strain to statically tune the semiconductor band gap of individual InAs quantum dots (QDs) embedded in a GaAs photonic wire featuring very efficient single photon collection efficiency. Thanks to the geometry of the structure, we are able to shift the QD excitonic transition by more than 20 meV by using nano-manipulators to apply the stress. Moreover, owing to the strong transverse strain gradient generated in the structure, we can relatively tune two QDs located in the wire waveguide and bring them in resonance, opening the way to the observation of collective effects such as superradiance. △ Less

Submitted 9 February, 2018; originally announced February 2018.

Journal ref: Appl. Phys. Lett. 112, 123102 (2018)

Large and uniform optical emission shifts in quantum dots externally strained along their growth axis

Authors: Petr Stepanov, Marta Elzo Aizarna, Joël Bleuse, Nitin S. Malik, Yoann Curé, Eric Gautier, Vincent Favre-Nicolin, Jean-Michel Gérard, Julien Claudon

Abstract: We introduce a method which enables to directly compare the impact of elastic strain on the optical properties of distinct quantum dots (QDs). Specifically, the QDs are integrated in a cross-section of a semiconductor core wire which is surrounded by an amorphous straining shell. Detailed numerical simulations show that, thanks to the mechanical isotropy of the shell, the strain field in a core se… ▽ More We introduce a method which enables to directly compare the impact of elastic strain on the optical properties of distinct quantum dots (QDs). Specifically, the QDs are integrated in a cross-section of a semiconductor core wire which is surrounded by an amorphous straining shell. Detailed numerical simulations show that, thanks to the mechanical isotropy of the shell, the strain field in a core section is homogeneous. Furthermore, we use the core material as an in situ strain gauge, yielding reliable values for the emitter energy tuning slope. This calibration technique is applied to self-assembled InAs QDs submitted to incremental tensile strain along their growth axis. In contrast to recent studies conducted on similar QDs stressed perpendicularly to their growth axis, optical spectroscopy reveals 5-10 times larger tuning slopes, with a moderate dispersion. These results highlight the importance of the stress direction to optimise QD response to applied strain, with implications both in static and dynamic regimes. As such, they are in particular relevant for the development of wavelength-tunable single photon sources or hybrid QD opto-mechanical systems. △ Less

Submitted 22 February, 2016; originally announced February 2016.