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Strain Engineering a $4a\times\sqrt{3}a$ Charge Density Wave Phase in Transition Metal Dichalcogenide 1T-VSe$_2$
Authors:
Duming Zhang,
Jeonghoon Ha,
Hongwoo Baek,
Yang-Hao Chan,
Fabian D. Natterer,
Alline F. Myers,
Joshua D. Schumacher,
William G. Cullen,
Albert V. Davydov,
Young Kuk,
M. Y. Chou,
Nikolai B. Zhitenev,
Joseph A. Stroscio
Abstract:
We report a rectangular charge density wave (CDW) phase in strained 1T-VSe$_2$ thin films synthesized by molecular beam epitaxy on c-sapphire substrates. The observed CDW structure exhibits an unconventional rectangular 4a{\times}{\sqrt{3a}} periodicity, as opposed to the previously reported hexagonal $4a\times4a$ structure in bulk crystals and exfoliated thin layered samples. Tunneling spectrosco…
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We report a rectangular charge density wave (CDW) phase in strained 1T-VSe$_2$ thin films synthesized by molecular beam epitaxy on c-sapphire substrates. The observed CDW structure exhibits an unconventional rectangular 4a{\times}{\sqrt{3a}} periodicity, as opposed to the previously reported hexagonal $4a\times4a$ structure in bulk crystals and exfoliated thin layered samples. Tunneling spectroscopy shows a strong modulation of the local density of states of the same $4a\times\sqrt{3}a$ CDW periodicity and an energy gap of $2Δ_{CDW}=(9.1\pm0.1)$ meV. The CDW energy gap evolves into a full gap at temperatures below 500 mK, indicating a transition to an insulating phase at ultra-low temperatures. First-principles calculations confirm the stability of both $4a\times4a$ and $4a\times\sqrt{3}a$ structures arising from soft modes in the phonon dispersion. The unconventional structure becomes preferred in the presence of strain, in agreement with experimental findings.
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Submitted 20 July, 2017;
originally announced July 2017.
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An On/Off Berry Phase Switch in Circular Graphene Resonators
Authors:
Fereshte Ghahari,
Daniel Walkup,
Christopher Gutiérrez,
Joaquin F. Rodriguez-Nieva,
Yue Zhao,
Jonathan Wyrick,
Fabian D. Natterer,
William G. Cullen,
Kenji Watanabe,
Takashi Taniguchi,
Leonid S. Levitov,
Nikolai B. Zhitenev,
Joseph A. Stroscio
Abstract:
The phase of a quantum state may not return to its original value after the system's parameters cycle around a closed path; instead, the wavefunction may acquire a measurable phase difference called the Berry phase. Berry phases typically have been accessed through interference experiments. Here, we demonstrate an unusual Berry-phase-induced spectroscopic feature: a sudden and large increase in th…
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The phase of a quantum state may not return to its original value after the system's parameters cycle around a closed path; instead, the wavefunction may acquire a measurable phase difference called the Berry phase. Berry phases typically have been accessed through interference experiments. Here, we demonstrate an unusual Berry-phase-induced spectroscopic feature: a sudden and large increase in the energy of angular-momentum states in circular graphene p-n junction resonators when a small critical magnetic field is reached. This behavior results from turning on a $π$-Berry phase associated with the topological properties of Dirac fermions in graphene. The Berry phase can be switched on and off with small magnetic field changes on the order of 10 mT, potentially enabling a variety of optoelectronic graphene device applications.
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Submitted 31 May, 2017;
originally announced May 2017.
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Scanning Tunneling Spectroscopy of Proximity Superconductivity in Epitaxial Multilayer Graphene
Authors:
Fabian D. Natterer,
Jeonghoon Ha,
Hongwoo Baek,
Duming Zhang,
William G. Cullen,
Nikolai B. Zhitenev,
Young Kuk,
Joseph A. Stroscio
Abstract:
We report on spatial measurements of the superconducting proximity effect in epitaxial graphene induced by a graphene-superconductor interface. Superconducting aluminum films were grown on epitaxial multilayer graphene on SiC. The aluminum films were discontinuous with networks of trenches in the film morphology reaching down to exposed graphene terraces. Scanning tunneling spectra measured on the…
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We report on spatial measurements of the superconducting proximity effect in epitaxial graphene induced by a graphene-superconductor interface. Superconducting aluminum films were grown on epitaxial multilayer graphene on SiC. The aluminum films were discontinuous with networks of trenches in the film morphology reaching down to exposed graphene terraces. Scanning tunneling spectra measured on the graphene terraces show a clear decay of the superconducting energy gap with increasing separation from the graphene-aluminum edges. The spectra were well described by Bardeen-Cooper-Schrieffer (BCS) theory. The decay length for the superconducting energy gap in graphene was determined to be greater than 400 nm. Deviations in the exponentially decaying energy gap were also observed on a much smaller length scale of tens of nanometers.
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Submitted 22 February, 2016;
originally announced February 2016.
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Thickness and growth-condition dependence of \emph{in-situ} mobility and carrier density of epitaxial thin-film Bi$_2$Se$_3$
Authors:
Jack Hellerstedt,
Mark Edmonds,
J. H. Chen,
William G. Cullen,
C. X. Zheng,
Michael S. Fuhrer
Abstract:
Bismuth selenide Bi$_2$Se$_3$ was grown by molecular beam epitaxy while carrier density and mobility were measured directly \emph{in situ} as a function of film thickness. Carrier density shows high interface n-doping (1.5 x 10$^{13}$ cm$^{-2}$) at the onset of film conduction, and bulk dopant density of $\sim$5 x 10$^{18}$ cm$^{-3}$, roughly independent of growth temperature profile. Mobility dep…
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Bismuth selenide Bi$_2$Se$_3$ was grown by molecular beam epitaxy while carrier density and mobility were measured directly \emph{in situ} as a function of film thickness. Carrier density shows high interface n-doping (1.5 x 10$^{13}$ cm$^{-2}$) at the onset of film conduction, and bulk dopant density of $\sim$5 x 10$^{18}$ cm$^{-3}$, roughly independent of growth temperature profile. Mobility depends more strongly on the growth temperature and is related to the crystalline quality of the samples quantified by \emph{ex-situ} AFM measurements. These results indicate that Bi$_2$Se$_3$ as prepared by widely employed parameters is \emph{n}-doped before exposure to atmosphere, the doping is largely interfacial in origin, and dopants are not the limiting disorder in present Bi$_2$Se$_3$ films.
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Submitted 22 May, 2014;
originally announced May 2014.
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Princess and the Pea at the nanoscale: Wrinkling and delamination of graphene on nanoparticles
Authors:
Mahito Yamamoto,
Olivier Pierre-Louis,
Jia Huang,
Michael S. Fuhrer,
T. L. Einstein,
William G. Cullen
Abstract:
Thin membranes exhibit complex responses to external forces or geometrical constraints. A familiar example is the wrinkling, exhibited by human skin, plant leaves, and fabrics, resulting from the relative ease of bending versus stretching. Here, we study the wrinkling of graphene, the thinnest and stiffest known membrane, deposited on a silica substrate decorated with silica nanoparticles. At smal…
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Thin membranes exhibit complex responses to external forces or geometrical constraints. A familiar example is the wrinkling, exhibited by human skin, plant leaves, and fabrics, resulting from the relative ease of bending versus stretching. Here, we study the wrinkling of graphene, the thinnest and stiffest known membrane, deposited on a silica substrate decorated with silica nanoparticles. At small nanoparticle density monolayer graphene adheres to the substrate, detached only in small regions around the nanoparticles. With increasing nanoparticle density, we observe the formation of wrinkles which connect nanoparticles. Above a critical nanoparticle density, the wrinkles form a percolating network through the sample. As the graphene membrane is made thicker, global delamination from the substrate is observed. The observations can be well understood within a continuum elastic model and have important implications for strain-engineering the electronic properties of graphene.
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Submitted 26 November, 2012; v1 submitted 26 January, 2012;
originally announced January 2012.
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High-fidelity conformation of graphene to SiO2 topographic features
Authors:
William G. Cullen,
Mahito Yamamoto,
Kristen M. Burson,
Jianhao Chen,
Chaun Jang,
Liang Li,
Michael S. Fuhrer,
Ellen D. Williams
Abstract:
Strain engineering of graphene through interaction with a patterned substrate offers the possibility of tailoring its electronic properties, but will require detailed understanding of how graphene's morphology is determined by the underlying substrate. However, previous experimental reports have drawn conflicting conclusions about the structure of graphene on SiO2. Here we show that high-resolutio…
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Strain engineering of graphene through interaction with a patterned substrate offers the possibility of tailoring its electronic properties, but will require detailed understanding of how graphene's morphology is determined by the underlying substrate. However, previous experimental reports have drawn conflicting conclusions about the structure of graphene on SiO2. Here we show that high-resolution non-contact atomic force microscopy of SiO2 reveals roughness at the few-nm length scale unresolved in previous measurements, and scanning tunneling microscopy of graphene on SiO2 shows it to be slightly smoother than the supporting SiO2 substrate. Quantitative analysis of the competition between bending rigidity of the graphene and adhesion to the substrate explains the observed roughness of monolayer graphene on SiO2 as extrinsic, and provides a natural, intuitive description in terms of highly conformal adhesion. The analysis indicates that graphene adopts the conformation of the underlying substrate down to the smallest features with nearly 99% fidelity.
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Submitted 27 July, 2010;
originally announced July 2010.
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Tunable Kondo Effect in Graphene with Defects
Authors:
Jian-Hao Chen,
W. G. Cullen,
E. D. Williams,
M. S. Fuhrer
Abstract:
Graphene is a model system for the study of electrons confined to a strictly two-dimensional layer1 and a large number of electronic phenomena have been demonstrated in graphene, from the fractional2, 3 quantum Hall effect to superconductivity4. However, the coupling of conduction electrons to local magnetic moments5, 6, a central problem of condensed matter physics, has not been realized in graph…
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Graphene is a model system for the study of electrons confined to a strictly two-dimensional layer1 and a large number of electronic phenomena have been demonstrated in graphene, from the fractional2, 3 quantum Hall effect to superconductivity4. However, the coupling of conduction electrons to local magnetic moments5, 6, a central problem of condensed matter physics, has not been realized in graphene, and, given carbon's lack of d or f electrons, magnetism in graphene would seem unlikely. Nonetheless, magnetism in graphitic carbon in the absence of transition-metal elements has been reported7-10, with explanations ranging from lattice defects11 to edge structures12, 13 to negative curvature regions of the graphene sheet14. Recent experiments suggest that correlated defects in highly-ordered pyrolytic graphite (HOPG) induced by proton irradiation9 or native to grain boundaries7, can give rise to ferromagnetism. Here we show that point defects (vacancies) in graphene15 are local moments which interact strongly with the conduction electrons through the Kondo effect6, 16-18 providing strong evidence that defects in graphene are indeed magnetic. The Kondo temperature TK is tunable with carrier density from 30-90 K; the high TK is a direct consequence of strong coupling of defects to conduction electrons in a Dirac material18. The results indicate that defect engineering in graphene could be used to generate and control carrier-mediated magnetism, and realize all-carbon spintronic devices. Furthermore, graphene should be an ideal system in which to probe Kondo physics in a widely tunable electron system.
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Submitted 4 March, 2011; v1 submitted 20 April, 2010;
originally announced April 2010.
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Defect scattering in graphene
Authors:
Jian-Hao Chen,
W. G. Cullen,
C. Jang,
M. S. Fuhrer,
E. D. Williams
Abstract:
Irradiation of graphene on SiO2 by 500 eV Ne and He ions creates defects that cause intervalley scattering as evident from a significant Raman D band intensity. The defect scattering gives a conductivity proportional to charge carrier density, with mobility decreasing as the inverse of the ion dose. The mobility decrease is four times larger than for a similar concentration of singly charged imp…
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Irradiation of graphene on SiO2 by 500 eV Ne and He ions creates defects that cause intervalley scattering as evident from a significant Raman D band intensity. The defect scattering gives a conductivity proportional to charge carrier density, with mobility decreasing as the inverse of the ion dose. The mobility decrease is four times larger than for a similar concentration of singly charged impurities. The minimum conductivity decreases proportional to the mobility to values lower than 4e^2/(pi*h), the minimum theoretical value for graphene free of intervalley scattering. Defected graphene shows a diverging resistivity at low temperature, indicating insulating behavior. The results are best explained by ion-induced formation of lattice defects that result in mid-gap states.
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Submitted 14 March, 2009;
originally announced March 2009.
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Pentacene islands grown on ultra-thin SiO2
Authors:
B. R. Conrad,
W. G. Cullen,
B. C. Riddick,
E. D. Williams
Abstract:
Ultra-thin oxide (UTO) films were grown on Si(111) in ultrahigh vacuum at room temperature and characterized by scanning tunneling microscopy. The ultra-thin oxide films were then used as substrates for room temperature growth of pentacene. The apparent height of the first layer is 1.57 +/- 0.05 nm, indicating standing up pentacene grains in the thin-film phase were formed. Pentacene is molecula…
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Ultra-thin oxide (UTO) films were grown on Si(111) in ultrahigh vacuum at room temperature and characterized by scanning tunneling microscopy. The ultra-thin oxide films were then used as substrates for room temperature growth of pentacene. The apparent height of the first layer is 1.57 +/- 0.05 nm, indicating standing up pentacene grains in the thin-film phase were formed. Pentacene is molecularly resolved in the second and subsequent molecular layers. The measured in-plane unit cell for the pentacene (001) plane (ab plane) is a=0.76+/-0.01 nm, b=0.59+/-0.01 nm, and gamma=87.5+/-0.4 degrees. The films are unperturbed by the UTO's short-range spatial variation in tunneling probability, and reduce its corresponding effective roughness and correlation exponent with increasing thickness. The pentacene surface morphology follows that of the UTO substrate, preserving step structure, the long range surface rms roughness of ~0.1 nm, and the structural correlation exponent of ~1.
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Submitted 15 November, 2008;
originally announced November 2008.
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Dynamic interfaces in an organic thin film
Authors:
Chenggang Tao,
Qiang Liu,
Blake C. Riddick,
William G. Cullen,
Janice Reutt-Robey,
John D. Weeks,
Ellen D. Williams
Abstract:
Low-dimensional boundaries between phases and domains in organic thin films are important in charge transport and recombination. Here, fluctuations of interfacial boundaries in an organic thin film, acridine-9-carboxylic acid (ACA) on Ag(111), have been visualized in real time, and measured quantitatively, using Scanning Tunneling Microscopy. The boundaries fluctuate via molecular exchange with…
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Low-dimensional boundaries between phases and domains in organic thin films are important in charge transport and recombination. Here, fluctuations of interfacial boundaries in an organic thin film, acridine-9-carboxylic acid (ACA) on Ag(111), have been visualized in real time, and measured quantitatively, using Scanning Tunneling Microscopy. The boundaries fluctuate via molecular exchange with exchange time constants of 10-30 ms at room temperature, yielding length mode fluctuations that should yield characteristic f-1/2 signatures for frequencies less than ~100 Hz. Although ACA has highly anisotropic intermolecular interactions, it forms islands that are compact in shape with crystallographically distinct boundaries that have essentially identical thermodynamic and kinetic properties . The physical basis of the modified symmetry is shown to arise from significantly different substrate interactions induced by alternating orientations of successive molecules in the condensed phase. Incorporating this additional set of interactions in a lattice gas model leads to effective multi-component behavior, as in the Blume-Emery-Griffiths (BEG) model, and can straightforwardly reproduce the experimentally observed isotropic behavior. The general multi-component description allows the domain shapes and boundary fluctuations to be tuned from isotropic to highly anisotropic in terms of the balance between intermolecular interactions and molecule-substrate interactions. Key words: Organic thin film, fluctuations, STM, molecular interactions, diffusion kinetics, phase coexistence
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Submitted 12 November, 2008;
originally announced November 2008.
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Atomic Structure of Graphene on SiO2
Authors:
Masa Ishigami,
J. H. Chen,
W. G. Cullen,
M. S. Fuhrer,
E. D. Williams
Abstract:
We employ scanning probe microscopy to reveal atomic structures and nanoscale morphology of graphene-based electronic devices (i.e. a graphene sheet supported by an insulating silicon dioxide substrate) for the first time. Atomic resolution STM images reveal the presence of a strong spatially dependent perturbation, which breaks the hexagonal lattice symmetry of the graphitic lattice. Structural…
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We employ scanning probe microscopy to reveal atomic structures and nanoscale morphology of graphene-based electronic devices (i.e. a graphene sheet supported by an insulating silicon dioxide substrate) for the first time. Atomic resolution STM images reveal the presence of a strong spatially dependent perturbation, which breaks the hexagonal lattice symmetry of the graphitic lattice. Structural corrugations of the graphene sheet partially conform to the underlying silicon oxide substrate. These effects are obscured or modified on graphene devices processed with normal lithographic methods, as they are covered with a layer of photoresist residue. We enable our experiments by a novel cleaning process to produce atomically-clean graphene sheets.
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Submitted 4 November, 2008;
originally announced November 2008.
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Spatial First-passage Statistics of Al/Si(111)-(root3 x root3) Step Fluctuations
Authors:
B. R. Conrad,
W. G. Cullen,
D. B. Dougherty,
I. Lyubinetsky,
E. D. Williams
Abstract:
Spatial step edge fluctuations on a multi-component surface of Al/Si(111)-(root3 x root3) were measured via scanning tunneling microscopy over a temperature range of 720K-1070K, for step lengths of L = 65-160 nm. Even though the time scale of fluctuations of steps on this surface varies by orders of magnitude over the indicated temperature ranges, measured first-passage spatial persistence and s…
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Spatial step edge fluctuations on a multi-component surface of Al/Si(111)-(root3 x root3) were measured via scanning tunneling microscopy over a temperature range of 720K-1070K, for step lengths of L = 65-160 nm. Even though the time scale of fluctuations of steps on this surface varies by orders of magnitude over the indicated temperature ranges, measured first-passage spatial persistence and survival probabilities are temperature independent. The power law functional form for spatial persistence probabilities is confirmed and the symmetric spatial persistence exponent is measured to be theta = 0.498 +/- 0.062 in agreement with the theoretical prediction theta = 1/2. The survival probability is found to scale directly with y/L, where y is the distance along the step edge. The form of the survival probabilities agree quantitatively with the theoretical prediction, which yields exponential decay in the limit of small y/L. The decay constant is found experimentally to be ys/L= 0.076 +/- 0.033 for y/L <= 0.2.
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Submitted 2 October, 2008;
originally announced October 2008.
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Effect of Impurities on Pentacene Thin Film Growth for Field-Effect Transistors
Authors:
Elba Gomar-Nadal,
Brad R. Conrad,
William G. Cullen,
Ellen D. Willams
Abstract:
Pentacenequinone (PnQ) impurities have been introduced into a pentacene source material at number densities from 0.001 to 0.474 to quantify the relative effects of impurity content and grain boundary structure on transport in pentacene thin-film transistors. Atomic force microscopy (AFM) and electrical measurements of top-contact pentacene thin-film transistors have been employed to directly cor…
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Pentacenequinone (PnQ) impurities have been introduced into a pentacene source material at number densities from 0.001 to 0.474 to quantify the relative effects of impurity content and grain boundary structure on transport in pentacene thin-film transistors. Atomic force microscopy (AFM) and electrical measurements of top-contact pentacene thin-film transistors have been employed to directly correlate initial structure and final film structures, with the device mobility as a function of added impurity content. The results reveal a factor four decrease in mobility without significant changes in film morphology for source PnQ number fractions below ~0.008. For these low concentrations, the impurity thus directly influences transport, either as homogeneously distributed defects or by concentration at the otherwise-unchanged grain boundaries. For larger impurity concentrations, the continuing strong decrease in mobility is correlated with decreasing grain size, indicating an impurity-induced increase in the nucleation of grains during early stages of film growth.
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Submitted 2 October, 2008;
originally announced October 2008.
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Effect of impurities on pentacene island nucleation
Authors:
B. R. Conrad,
Elba Gomar-Nadal,
W. G. Cullen,
A. Pimpinelli,
T. L. Einstein,
E. D. Williams
Abstract:
Pentacenequinone (PnQ) impurities have been introduced into a pentacene source material in a controlled manner to quantify the relative effects of the impurity content on grain boundary structure and thin film nucleation. Atomic force microscopy (AFM) has been employed to directly characterize films grown using 0.0-7.5% PnQ by weight in the source material. Analysis of the distribution of captur…
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Pentacenequinone (PnQ) impurities have been introduced into a pentacene source material in a controlled manner to quantify the relative effects of the impurity content on grain boundary structure and thin film nucleation. Atomic force microscopy (AFM) has been employed to directly characterize films grown using 0.0-7.5% PnQ by weight in the source material. Analysis of the distribution of capture zones areas of submonolayer islands as a function of impurity content shows that for large PnQ content the critical nucleus size for forming a Pn island is smaller than for low PnQ content. This result indicates a favorable energy for formation of Pn-PnQ complexes, which in turn suggests that the primary effect of PnQ on Pn mobility may arise from homogeneous distribution of PnQ defects.
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Submitted 26 September, 2008;
originally announced September 2008.
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Percolative Effects on Noise in Pentacene Transistors
Authors:
B. R. Conrad,
W. G. Cullen,
W. Yan,
E. D. Williams
Abstract:
The 1/f noise in pentacene thin film transistors has been measured as a function of device thickness from well above the effective conduction channel thickness to only two conducting layers. Over the entire thickness range, the spectral noise form is 1/f, and the noise parameter varies as (gate voltage)-1, confirming that the noise is due to mobility fluctuations, even in the thinnest films. Hoo…
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The 1/f noise in pentacene thin film transistors has been measured as a function of device thickness from well above the effective conduction channel thickness to only two conducting layers. Over the entire thickness range, the spectral noise form is 1/f, and the noise parameter varies as (gate voltage)-1, confirming that the noise is due to mobility fluctuations, even in the thinnest films. Hooge's parameter varies as an inverse power-law with conductivity for all film thicknesses. The magnitude and transport characteristics of the spectral noise are well explained in terms of percolative effects arising from the grain boundary structure.
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Submitted 26 September, 2008; v1 submitted 14 October, 2007;
originally announced October 2007.
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Biased Structural Fluctuations due to Electron Wind Force
Authors:
O. Bondarchuk,
W. G. Cullen,
M. Degawa,
Ellen D. Williams
Abstract:
Direct correlation between temporal structural fluctuations and electron wind force is demonstrated, for the first time, by STM imaging and analysis of atomically-resolved motion on a thin film surface under large applied current (10e5 Amp/sqare cm). The magnitude of the momentum transfer between current carriers and atoms in the fluctuating structure is at least five to fifteen times (plus or m…
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Direct correlation between temporal structural fluctuations and electron wind force is demonstrated, for the first time, by STM imaging and analysis of atomically-resolved motion on a thin film surface under large applied current (10e5 Amp/sqare cm). The magnitude of the momentum transfer between current carriers and atoms in the fluctuating structure is at least five to fifteen times (plus or minus one sigma range) larger than for freely diffusing adatoms. The corresponding changes in surface resistivity will contribute significant fluctuation signature to nanoscale electronic properties.
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Submitted 14 April, 2007;
originally announced April 2007.
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Spiral Evolution in a Confined Geometry
Authors:
Madhav Ranganathan,
D. B. Dougherty,
W. G. Cullen,
Tong Zhao,
John D. Weeks,
E. D. Williams
Abstract:
Supported nanoscale lead crystallites with a step emerging from a non-centered screw dislocation on the circular top facet were prepared by rapid cooling from just above the melting temperature. STM observations of the top facet show a nonuniform rotation rate and shape of the spiral step as the crystallite relaxes. These features can be accurately modeled using curvature driven dynamics, as in…
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Supported nanoscale lead crystallites with a step emerging from a non-centered screw dislocation on the circular top facet were prepared by rapid cooling from just above the melting temperature. STM observations of the top facet show a nonuniform rotation rate and shape of the spiral step as the crystallite relaxes. These features can be accurately modeled using curvature driven dynamics, as in classical models of spiral growth, with boundary conditions fixing the dislocation core and regions of the step lying along the outer facet edge.
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Submitted 21 November, 2005;
originally announced November 2005.
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Sampling Time Effects for Persistence and Survival in Step Structural Fluctuations
Authors:
D. B. Dougherty,
C. Tao,
O. Bondarchuk,
W. G. Cullen,
E. D. Williams,
M. Constantin,
C. Dasgupta,
S. Das Sarma
Abstract:
The effects of sampling rate and total measurement time have been determined for single-point measurements of step fluctuations within the context of first-passage properties. Time dependent STM has been used to evaluate step fluctuations on Ag(111) films grown on mica as a function of temperature (300-410 K), on screw dislocations on the facets of Pb crystallites at 320K, and on Al-terminated S…
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The effects of sampling rate and total measurement time have been determined for single-point measurements of step fluctuations within the context of first-passage properties. Time dependent STM has been used to evaluate step fluctuations on Ag(111) films grown on mica as a function of temperature (300-410 K), on screw dislocations on the facets of Pb crystallites at 320K, and on Al-terminated Si(111) over the temperature range 770K - 970K. Although the fundamental time constant for step fluctuations on Ag and Al/Si varies by orders of magnitude over the temperature ranges of measurement, no dependence of the persistence amplitude on temperature is observed. Instead, the persistence probability is found to scale directly with t/Dt where Dt is the time interval used for sampling. Survival probabilities show a more complex scaling dependence which includes both the sampling interval and the total measurement time tm. Scaling with t/Dt occurs only when Dt/tm is a constant. We show that this observation is equivalent to theoretical predictions that the survival probability will scale as Dt/L^z, where L is the effective length of a step. This implies that the survival probability for large systems, when measured with fixed values of tm or Dt should also show little or no temperature dependence.
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Submitted 21 October, 2005; v1 submitted 4 October, 2004;
originally announced October 2004.
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Reply to Comment on: "Spontaneous breaking of time-reversal symmetry in the pseudogap state of a high-Tc superconductor"
Authors:
A. Kaminski,
S. Rosenkranz,
H. M. Fretwell,
J. C. Campuzano,
Z. Z. Li,
H. Raffy,
W. G. Cullen,
H. You,
C. G. Olson,
C. M. Varma,
H. Hoechst
Abstract:
In a recent comment [1], Armitage and Hu have suggested that our experiment observing dichroism in angle resolved photoemission (ARPES) [2] could not be conclusively interpreted as arising from time reversal symmetry breaking, arguing that our observations are likely due to structural effects. The concerns expressed by Armitage and Hu that our results could be due to a change in the mirror plane…
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In a recent comment [1], Armitage and Hu have suggested that our experiment observing dichroism in angle resolved photoemission (ARPES) [2] could not be conclusively interpreted as arising from time reversal symmetry breaking, arguing that our observations are likely due to structural effects. The concerns expressed by Armitage and Hu that our results could be due to a change in the mirror plane are as important as they are obvious. In fact the first part of their comment merely restates the results of Simon and Varma [3] about the relationship and contrast of effects due to time reversal symmetry breaking and those caused by crystallographic changes. In any test of time reversal symmetry one must ensure that parity alone is not inducing the observed changes. We have indeed considered this issue very carefully in the course of our study [2] and it is precisely the lack of temperature dependent structural changes significant enough to explain the magnitude of the observed dichroism that forced us to conclude that time reversal symmetry breaking is the only plausible explanation. Furthermore, recent experiments by Borisenko, et al. [4] confirm that changes in the mirror plane are unmeasurably small.
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Submitted 24 June, 2003; v1 submitted 5 June, 2003;
originally announced June 2003.
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Spontaneous time reversal symmetry breaking in the pseudogap state of high-Tc superconductors
Authors:
A. Kaminski,
S. Rosenkranz,
H. M. Fretwell,
J. C. Campuzano,
Z. Li,
H. Raffy,
W. G. Cullen,
H. You,
C. G. Olson,
C. M. Varma,
H. H"ochst
Abstract:
When matter undergoes a phase transition from one state to another, usually a change in symmetry is observed, as some of the symmetries exhibited are said to be spontaneously broken. The superconducting phase transition in the underdoped high-Tc superconductors is rather unusual, in that it is not a mean-field transition as other superconducting transitions are. Instead, it is observed that a ps…
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When matter undergoes a phase transition from one state to another, usually a change in symmetry is observed, as some of the symmetries exhibited are said to be spontaneously broken. The superconducting phase transition in the underdoped high-Tc superconductors is rather unusual, in that it is not a mean-field transition as other superconducting transitions are. Instead, it is observed that a pseudo-gap in the electronic excitation spectrum appears at temperatures T* higher than Tc, while phase coherence, and superconductivity, are established at Tc (Refs. 1, 2). One would then wish to understand if T* is just a crossover, controlled by fluctuations in order which will set in at the lower Tc (Refs. 3, 4), or whether some symmetry is spontaneously broken at T* (Refs. 5-10). Here, using angle-resolved photoemission with circularly polarized light, we find that, in the pseudogap state, left-circularly polarized photons give a different photocurrent than right-circularly polarized photons, and therefore the state below T* is rather unusual, in that it breaks time reversal symmetry11. This observation of a phase transition at T* provides the answer to a major mystery of the phase diagram of the cuprates. The appearance of the anomalies below T* must be related to the order parameter that sets in at this characteristic temperature .
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Submitted 6 March, 2002;
originally announced March 2002.
