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VO$_2$ oscillator circuits optimized for ultrafast, 100 MHz-range operation
Authors:
Zsigmond Pollner,
Tímea Nóra Török,
László Pósa,
Miklós Csontos,
Sebastian Werner Schmid,
Zoltán Balogh,
András Bükkfejes,
Heungsoo Kim,
Alberto Piqué,
Jeurg Leuthold,
János Volk,
András Halbritter
Abstract:
Oscillating neural networks are promising candidates for a new computational paradigm, where complex optimization problems are solved by physics itself through the synchronization of coupled oscillating circuits. Nanoscale VO$_2$ Mott memristors are particularly promising building blocks for such oscillating neural networks. Until now, however, not only the maximum frequency of VO$_2$ oscillating…
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Oscillating neural networks are promising candidates for a new computational paradigm, where complex optimization problems are solved by physics itself through the synchronization of coupled oscillating circuits. Nanoscale VO$_2$ Mott memristors are particularly promising building blocks for such oscillating neural networks. Until now, however, not only the maximum frequency of VO$_2$ oscillating neural networks, but also the maximum frequency of individual VO$_2$ oscillators has been severely limited, which has restricted their efficient and energy-saving use. In this paper, we show how the oscillating frequency can be increased by more than an order of magnitude into the 100 MHz range by optimizing the sample layout and circuit layout. In addition, the physical limiting factors of the oscillation frequencies are studied by investigating the switching dynamics. To this end, we investigate how much the set and reset times slow down under oscillator conditions compared to the fastest switching achieved with single dedicated pulses. These results pave the way towards the realization of ultra-fast and energy-efficient VO$_2$-based oscillating neural networks.
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Submitted 1 June, 2025;
originally announced June 2025.
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Benchmarking stochasticity behind reproducibility: denoising strategies in Ta$_2$O$_5$ memristors
Authors:
Anna Nyáry,
Zoltán Balogh,
Botond Sánta,
György Lázár,
Nadia Jimenez Olalla,
Juerg Leuthold,
Miklós Csontos,
András Halbritter
Abstract:
Reproducibility, endurance, driftless data retention, and fine resolution of the programmable conductance weights are key technological requirements against memristive artificial synapses in neural network applications. However, the inherent fluctuations in the active volume impose severe constraints on the weight resolution. In order to understand and push these limits, a comprehensive noise benc…
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Reproducibility, endurance, driftless data retention, and fine resolution of the programmable conductance weights are key technological requirements against memristive artificial synapses in neural network applications. However, the inherent fluctuations in the active volume impose severe constraints on the weight resolution. In order to understand and push these limits, a comprehensive noise benchmarking and noise reduction protocol is introduced. Our approach goes beyond the measurement of steady-state readout noise levels and tracks the voltage-dependent noise characteristics all along the resistive switching $I(V)$ curves. Furthermore, we investigate the tunability of the noise level by dedicated voltage cycling schemes in our filamentary Ta$_2$O$_5$ memristors. This analysis highlights a broad, order-of-magnitude variability of the possible noise levels behind seemingly reproducible switching cycles. Our nonlinear noise spectroscopy measurements identify a subthreshold voltage region with voltage-boosted fluctuations. This voltage range enables the reconfiguration of the fluctuators without resistive switching, yielding a highly denoised state within a few subthreshold cycles.
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Submitted 20 December, 2024;
originally announced December 2024.
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Picosecond Femtojoule Resistive Switching in Nanoscale VO$_{2}$ Memristors
Authors:
S. W. Schmid,
L. Pósa,
T. N. Török,
B. Sánta,
Z. Pollner,
G. Molnár,
Y. Horst,
J. Volk,
J. Leuthold,
A. Halbritter,
M. Csontos
Abstract:
Beyond-Moore computing technologies are expected to provide a sustainable alternative to the von Neumann approach not only due to their down-scaling potential but also via exploiting device-level functional complexity at the lowest possible energy consumption. The dynamics of the Mott transition in correlated electron oxides, such as vanadium dioxide, has been identified as a rich and reliable sou…
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Beyond-Moore computing technologies are expected to provide a sustainable alternative to the von Neumann approach not only due to their down-scaling potential but also via exploiting device-level functional complexity at the lowest possible energy consumption. The dynamics of the Mott transition in correlated electron oxides, such as vanadium dioxide, has been identified as a rich and reliable source of such functional complexity. However, its full potential in high-speed and low-power operation has been largely unexplored. We fabricated nanoscale VO$_{2}$ devices embedded in a broad-band test circuit to study the speed and energy limitations of their resistive switching operation. Our picosecond time-resolution, real-time resistive switching experiments and numerical simulations demonstrate that tunable low-resistance states can be set by the application of 20~ps long, $<$1.7~V amplitude voltage pulses at 15~ps incubation times and switching energies starting from a few femtojoule. Moreover, we demonstrate that at nanometer-scale device sizes not only the electric field induced insulator-to-metal transition, but also the thermal conduction limited metal-to-insulator transition can take place at timescales of 100's of picoseconds. These orders of magnitude breakthroughs open the route to the design of high-speed and low-power dynamical circuits for a plethora of neuromorphic computing applications from pattern recognition to numerical optimization.
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Submitted 20 March, 2024;
originally announced March 2024.
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Neural information processing and time-series prediction with only two dynamical memristors
Authors:
Dániel Molnár,
Tímea Nóra Török,
János Volk Jr.,
Roland Kövecs,
László Pósa,
Péter Balázs,
György Molnár,
Nadia Jimenez Olalla,
Zoltán Balogh,
János Volk,
Juerg Leuthold,
Miklós Csontos,
András Halbritter
Abstract:
Memristive devices are commonly benchmarked by the multi-level programmability of their resistance states. Neural networks utilizing memristor crossbar arrays as synaptic layers largely rely on this feature. However, the dynamical properties of memristors, such as the adaptive response times arising from the exponential voltage dependence of the resistive switching speed remain largely unexploited…
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Memristive devices are commonly benchmarked by the multi-level programmability of their resistance states. Neural networks utilizing memristor crossbar arrays as synaptic layers largely rely on this feature. However, the dynamical properties of memristors, such as the adaptive response times arising from the exponential voltage dependence of the resistive switching speed remain largely unexploited. Here, we propose an information processing scheme which fundamentally relies on the latter. We realize simple dynamical memristor circuits capable of complex temporal information processing tasks. We demonstrate an artificial neural circuit with one nonvolatile and one volatile memristor which can detect a neural spike pattern in a very noisy environment, fire a single voltage pulse upon successful detection and reset itself in an entirely autonomous manner. Furthermore, we implement a circuit with only two nonvolatile memristors which can learn the operation of an external dynamical system and perform the corresponding time-series prediction with high accuracy.
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Submitted 29 November, 2024; v1 submitted 25 July, 2023;
originally announced July 2023.
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Quantum transport properties of tantalum-oxide resistive switching filaments
Authors:
Tímea Nóra Török,
Péter Makk,
Zoltán Balogh,
Miklós Csontos,
András Halbritter
Abstract:
Filamentary resistive switching devices are not only considered as promising building blocks for brain-inspired computing architectures, but they also realize an unprecedented operation regime, where the active device volume reaches truly atomic dimensions. Such atomic-sized resistive switching filaments represent the quantum transport regime, where the transmission eigenvalues of the conductance…
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Filamentary resistive switching devices are not only considered as promising building blocks for brain-inspired computing architectures, but they also realize an unprecedented operation regime, where the active device volume reaches truly atomic dimensions. Such atomic-sized resistive switching filaments represent the quantum transport regime, where the transmission eigenvalues of the conductance channels are considered as a specific device fingerprint. Here, we gain insight into the quantum transmission properties of close-to-atomic-sized resistive switching filaments formed across an insulating Ta$_2$O$_5$ layer through superconducting subgap spectroscopy. This method reveals the transmission density function of the open conduction channels contributing to the device conductance. Our analysis confirms the formation of truly atomic-sized filaments composed of 3-8 Ta atoms at their narrowest cross-section. We find that this diameter remains unchanged upon resistive switching. Instead, the switching is governed by the redistribution of oxygen vacancies within the filamentary volume. The set/reset process results in the reduction/formation of an extended barrier at the bottleneck of the filament which enhances/reduces the transmission of the highly open conduction channels.
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Submitted 6 February, 2023;
originally announced February 2023.
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Picosecond Time-Scale Resistive Switching Monitored in Real-Time
Authors:
Miklós Csontos,
Yannik Horst,
Nadia Jimenez Olalla,
Ueli Koch,
Ivan Shorubalko,
András Halbritter,
Juerg Leuthold
Abstract:
The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling potential and energy efficiency but also in unprecedented speed. Yet, the breakthrough in high-frequency applications still requires the clarification of the domin…
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The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling potential and energy efficiency but also in unprecedented speed. Yet, the breakthrough in high-frequency applications still requires the clarification of the dominant mechanisms and inherent limitations of ultra-fast resistive switching. Here we investigate bipolar, multilevel resistive switchings in tantalum pentoxide based memristors with picosecond time resolution. We experimentally demonstrate cyclic resistive switching operation due to 20 ps long voltage pulses of alternating polarity. Through the analysis of the real-time response of the memristor we find that the set switching can take place at the picosecond time-scale where it is only compromised by the bandwidth limitations of the experimental setup. In contrast, the completion of the reset transitions significantly exceeds the duration of the ultra-short voltage bias, demonstrating the dominant role of thermal diffusion and underlining the importance of dedicated thermal engineering for future high-frequency memristor circuit applications.
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Submitted 14 September, 2022;
originally announced September 2022.
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Breaking the quantum PIN code of atomic synapses
Authors:
Tímea Nóra Török,
Miklós Csontos,
Péter Makk,
András Halbritter
Abstract:
Atomic synapses represent a special class of memristors whose operation relies on the formation of metallic nanofilaments bridging two electrodes across an insulator. Due to the magnifying effect of this narrowest cross-section on the device conductance, a nanometer scale displacement of a few atoms grants access to various resistive states at ultimately low energy costs, satisfying the fundamenta…
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Atomic synapses represent a special class of memristors whose operation relies on the formation of metallic nanofilaments bridging two electrodes across an insulator. Due to the magnifying effect of this narrowest cross-section on the device conductance, a nanometer scale displacement of a few atoms grants access to various resistive states at ultimately low energy costs, satisfying the fundamental requirements of neuromorphic computing hardware. Yet, device engineering lacks the complete quantum characterization of such filamentary conductance. Here we analyze multiple Andreev reflection processes emerging at the filament terminals when superconducting electrodes are utilized. Thereby the quantum PIN code, i.e. the transmission probabilities of each individual conduction channel contributing to the conductance of the nanojunctions is revealed. Our measurements on Nb$_2$O$_5$ resistive switching junctions provide a profound experimental evidence that the onset of the high conductance ON state is manifested via the formation of truly atomic-sized metallic filaments.
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Submitted 17 July, 2020;
originally announced July 2020.
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Asymmetry-induced resistive switching in Ag-Ag$_{2}$S-Ag memristors enabling a simplified atomic-scale memory design
Authors:
A. Gubicza,
D. Zs. Manrique,
L. Pósa,
C. J. Lambert,
G. Mihály,
M. Csontos,
A. Halbritter
Abstract:
Prevailing models of resistive switching arising from electrochemical formation of conducting filaments across solid state ionic conductors commonly attribute the observed polarity of the voltage-biased switching to the sequence of the active and inert electrodes confining the resistive switching memory cell. Here we demonstrate equivalent, stable switching behavior in metallic Ag-Ag$_{2}$S-Ag nan…
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Prevailing models of resistive switching arising from electrochemical formation of conducting filaments across solid state ionic conductors commonly attribute the observed polarity of the voltage-biased switching to the sequence of the active and inert electrodes confining the resistive switching memory cell. Here we demonstrate equivalent, stable switching behavior in metallic Ag-Ag$_{2}$S-Ag nanojunctions at room temperature. Our experimental results and numerical simulations reveal that the polarity of the switchings is solely determined by the geometrical asymmetry of the electrode surfaces. By the lithographical design of a proof of principle device we demonstrate the merits of simplified fabrication of atomic-scale, robust planar Ag$_{2}$S memory cells.
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Submitted 14 April, 2016;
originally announced April 2016.
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Emergence of bound states in ballistic magnetotransport of graphene antidots
Authors:
P. Rakyta,
E. Tóvári,
M. Csontos,
Sz. Csonka,
A. Csordás,
J. Cserti
Abstract:
An experimental method for detection of bound states around an antidot formed from a hole in a graphene sheet is proposed by measuring the ballistic two terminal conductances. In particularly, we consider the effect of bound states formed by magnetic field on the two terminal conductance and show that one can observe Breit-Wigner like resonances in the conductance as a function of the Fermi level…
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An experimental method for detection of bound states around an antidot formed from a hole in a graphene sheet is proposed by measuring the ballistic two terminal conductances. In particularly, we consider the effect of bound states formed by magnetic field on the two terminal conductance and show that one can observe Breit-Wigner like resonances in the conductance as a function of the Fermi level close to the energies of the bound states. In addition, we develop a new numerical method in which the computational effort is proportional to the linear dimensions, instead of the area of the scattering region beeing typical for the existing numerical recursive Green's function method.
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Submitted 25 September, 2014; v1 submitted 7 August, 2014;
originally announced August 2014.
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GHz Operation of Nanometer-Scale Metallic Memristors: Highly Transparent Conductance Channels in Ag$_{2}$S Devices
Authors:
A. Geresdi,
M. Csontos,
A. Gubicza,
A. Halbritter,
G. Mihály
Abstract:
The nonlinear transport properties of nanometer-scale junctions formed between an inert metallic tip and an Ag film covered by a thin Ag$_{2}$S layer are investigated. Suitably prepared samples exhibit memristive behavior with technologically optimal ON and OFF state resistances yielding to resistive switching on the nanosecond time scale. Utilizing point contact Andreev reflection spectroscopy we…
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The nonlinear transport properties of nanometer-scale junctions formed between an inert metallic tip and an Ag film covered by a thin Ag$_{2}$S layer are investigated. Suitably prepared samples exhibit memristive behavior with technologically optimal ON and OFF state resistances yielding to resistive switching on the nanosecond time scale. Utilizing point contact Andreev reflection spectroscopy we studied the nature of electron transport in the active volume of the memristive junctions showing that both the ON and OFF states correspond to truly nanometer scale, highly transparent metallic channels. Our results demonstrate the merits of Ag$_{2}$S nanojunctions as nanometer-scale memory cells with GHz operation frequencies.
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Submitted 18 October, 2013;
originally announced October 2013.
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Origins of conductance anomalies in a p-type GaAs quantum point contact
Authors:
Y. Komijani,
M. Csontos,
T. Ihn,
K. Ensslin,
Y. Meir,
D. Reuter,
A. D. Wieck
Abstract:
Low temperature transport measurements on a p-GaAs quantum point contact are presented which reveal the presence of a conductance anomaly that is markedly different from the conventional `0.7 anomaly'. A lateral shift by asymmetric gating of the conducting channel is utilized to identify and separate different conductance anomalies of local and generic origins experimentally. While the more generi…
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Low temperature transport measurements on a p-GaAs quantum point contact are presented which reveal the presence of a conductance anomaly that is markedly different from the conventional `0.7 anomaly'. A lateral shift by asymmetric gating of the conducting channel is utilized to identify and separate different conductance anomalies of local and generic origins experimentally. While the more generic 0.7 anomaly is not directly affected by changing the gate configuration, a model is proposed which attributes the additional conductance features to a gate-dependent coupling of the propagating states to localized states emerging due to a nearby potential imperfection. Finite bias conductivity measurements reveal the interplay between the two anomalies consistently with a two-impurity Kondo model.
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Submitted 4 June, 2013; v1 submitted 17 January, 2013;
originally announced January 2013.
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Anisotropic Zeeman splitting in p-type GaAs quantum point contacts
Authors:
Y. Komijani,
M. Csontos,
I. Shorubalko,
U. Zuelicke,
T. Ihn,
K. Ensslin,
D. Reuter,
A. D. Wieck
Abstract:
Low-temperature electrical conductance spectroscopy measurements of quantum point contacts implemented in p-type GaAs/AlGaAs heterostructures are used to study the Zeeman splitting of 1D subbands for both in-plane and out-of-plane magnetic field orientations. The resulting in-plane g-factors agree qualitatively with those of previous experiments on quantum wires while the quantitative differences…
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Low-temperature electrical conductance spectroscopy measurements of quantum point contacts implemented in p-type GaAs/AlGaAs heterostructures are used to study the Zeeman splitting of 1D subbands for both in-plane and out-of-plane magnetic field orientations. The resulting in-plane g-factors agree qualitatively with those of previous experiments on quantum wires while the quantitative differences can be understood in terms of the enhanced quasi-1D confinement anisotropy. The influence of confinement potential on the anisotropy is discussed and an estimate for the out-of-plane g-factor is obtained which, in contrast to previous experiments, is closer to the theoretical prediction.
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Submitted 17 January, 2013;
originally announced January 2013.
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Nanostructures in p-GaAs with improved tunability
Authors:
M. Csontos,
Y. Komijani,
I. Shorubalko,
K. Ensslin,
D. Reuter,
A. D. Wieck
Abstract:
A nano-fabrication technique is presented which enables the fabrication of highly tunable devices on p-type, C-doped GaAs/AlGaAs heterostructures containing shallow two-dimensional hole systems. The high tunability of these structures is provided by the complementary electrostatic effects of intrinsic in-plane gates and evaporated metallic top-gates. Quantum point contacts fabricated with this tec…
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A nano-fabrication technique is presented which enables the fabrication of highly tunable devices on p-type, C-doped GaAs/AlGaAs heterostructures containing shallow two-dimensional hole systems. The high tunability of these structures is provided by the complementary electrostatic effects of intrinsic in-plane gates and evaporated metallic top-gates. Quantum point contacts fabricated with this technique were tested by electrical conductance spectroscopy.
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Submitted 26 May, 2010;
originally announced May 2010.
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Evidence for localization and 0.7 anomaly in hole quantum point contacts
Authors:
Y. Komijani,
M. Csontos,
I. Shorubalko,
T. Ihn,
K. Ensslin,
Y. Meir,
D. Reuter,
A. D. Wieck
Abstract:
Quantum point contacts implemented in p-type GaAs/AlGaAs heterostructures are investigated by low-temperature electrical conductance spectroscopy measurements. Besides one-dimensional conductance quantization in units of $2e^{2}/h$ a pronounced extra plateau is found at about $0.7(2e^{2}/h)$ which possesses the characteristic properties of the so-called "0.7 anomaly" known from experiments with…
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Quantum point contacts implemented in p-type GaAs/AlGaAs heterostructures are investigated by low-temperature electrical conductance spectroscopy measurements. Besides one-dimensional conductance quantization in units of $2e^{2}/h$ a pronounced extra plateau is found at about $0.7(2e^{2}/h)$ which possesses the characteristic properties of the so-called "0.7 anomaly" known from experiments with n-type samples. The evolution of the 0.7 plateau in high perpendicular magnetic field reveals the existence of a quasi-localized state and supports the explanation of the 0.7 anomaly based on self-consistent charge localization. These observations are robust when lateral electrical fields are applied which shift the relative position of the electron wavefunction in the quantum point contact, testifying to the intrinsic nature of the underlying physics.
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Submitted 10 May, 2010; v1 submitted 17 August, 2009;
originally announced August 2009.
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Observation of excited states in a p-type GaAs quantum dot
Authors:
Y. Komijani,
M. Csontos,
T. Ihn,
K. Ensslin,
D. Reuter,
A. D. Wieck
Abstract:
A quantum dot fabricated by scanning probe oxidation lithography on a p-type, C-doped GaAs/AlGaAs heterostructure is investigated by low temperature electrical conductance measurements. Clear Coulomb blockade oscillations are observed and analyzed in terms of sequential tunneling through the single-particle levels of the dot at T_hole = 185 mK. The charging energies as large as 2 meV evaluated f…
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A quantum dot fabricated by scanning probe oxidation lithography on a p-type, C-doped GaAs/AlGaAs heterostructure is investigated by low temperature electrical conductance measurements. Clear Coulomb blockade oscillations are observed and analyzed in terms of sequential tunneling through the single-particle levels of the dot at T_hole = 185 mK. The charging energies as large as 2 meV evaluated from Coulomb diamond measurements together with the well resolved single-hole excited state lines in the charge stability diagram indicate that the dot is operated with a small number of confined particles close to the ultimate single-hole regime.
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Submitted 8 September, 2008;
originally announced September 2008.
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Nanoscale spin-polarization in dilute magnetic semiconductor (In,Mn)Sb
Authors:
A. Geresdi,
A. Halbritter,
M. Csontos,
Sz. Csonka,
G. Mihaly,
T. Wojtowicz,
X. Liu,
B. Janko,
J. K. Furdyna
Abstract:
Results of point contact Andreev reflection (PCAR) experiments on (In,Mn)Sb are presented and analyzed in terms of current models of charge conversion at a superconductor-ferromagnet interface. We investigate the influence of surface transparency, and study the crossover from ballistic to diffusive transport regime as contact size is varied. Application of a Nb tip to a (In,Mn)Sb sample with Cur…
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Results of point contact Andreev reflection (PCAR) experiments on (In,Mn)Sb are presented and analyzed in terms of current models of charge conversion at a superconductor-ferromagnet interface. We investigate the influence of surface transparency, and study the crossover from ballistic to diffusive transport regime as contact size is varied. Application of a Nb tip to a (In,Mn)Sb sample with Curie temperature Tc of 5.4 K allowed the determination of spin-polarization when the ferromagnetic phase transition temperature is crossed. We find a striking difference between the temperature dependence of the local spin polarization and of the macroscopic magnetization, and demonstrate that nanoscale clusters with magnetization close to the saturated value are present even well above the magnetic phase transition temperature.
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Submitted 9 January, 2008;
originally announced January 2008.
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Anomalous Hall effect in (In,Mn)Sb dilute magnetic semiconductor
Authors:
G. Mihaly,
M. Csontos,
S. Bordacs,
I. Kezsmarki,
T. Wojtowicz,
X. Liu,
B. Janko,
J. K. Furdyna
Abstract:
High magnetic field study of Hall resistivity in the ferromagnetic phase of (In,Mn)Sb allows one to separate its normal and anomalous components. We show that the anomalous Hall term is not proportional to the magnetization, and that it even changes sign as a function of magnetic field. We also show that the application of pressure modifies the scattering process, but does not influence the Hall…
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High magnetic field study of Hall resistivity in the ferromagnetic phase of (In,Mn)Sb allows one to separate its normal and anomalous components. We show that the anomalous Hall term is not proportional to the magnetization, and that it even changes sign as a function of magnetic field. We also show that the application of pressure modifies the scattering process, but does not influence the Hall effect. These observations suggest that the anomalous Hall effect in (In,Mn)Sb is an intrinsic property and support the application of the Berry phase theory for (III,Mn)V semiconductors. We propose a phenomenological description of the anomalous Hall conductivity, based on a field-dependent relative shift of the heavy- and light-hole valence bands and the split-off band.
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Submitted 10 October, 2007; v1 submitted 1 September, 2007;
originally announced September 2007.
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Magnetic and Transport Properties of Fe-Ag granular multilayers
Authors:
M. Csontos,
J. Balogh,
D. Kaptas,
L. F. Kiss,
G. Mihaly
Abstract:
Results of magnetization, magnetotransport and Mossbauer spectroscopy measurements of sequentially evaporated Fe-Ag granular composites are presented. The strong magnetic scattering of the conduction electrons is reflected in the sublinear temperature dependence of the resistance and in the large negative magnetoresistance. The simultaneous analysis of the magnetic properties and the transport b…
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Results of magnetization, magnetotransport and Mossbauer spectroscopy measurements of sequentially evaporated Fe-Ag granular composites are presented. The strong magnetic scattering of the conduction electrons is reflected in the sublinear temperature dependence of the resistance and in the large negative magnetoresistance. The simultaneous analysis of the magnetic properties and the transport behavior suggests a bimodal grain size distribution. A detailed quantitative description of the unusual features observed in the transport properties is given.
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Submitted 13 June, 2005; v1 submitted 3 June, 2005;
originally announced June 2005.
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Magnetic scattering of spin polarized carriers in (In,Mn)Sb dilute magnetic semiconductor
Authors:
M. Csontos,
T. Wojtowicz,
X. Liu,
M. Dobrowolska B. Jankó,
J. K. Furdyna,
G. Mihály
Abstract:
Magnetoresistance measurements on the magnetic semiconductor (In,Mn)Sb suggest that magnetic scattering in this material is dominated by isolated Mn$^{2+}$ ions located outside the ferromagnetically-ordered regions when the system is below $T_{c}$. A model is proposed, based on the $p$-$d$ exchange between spin-polarized charge carriers and localized Mn$^{2+}$ ions, which accounts for the observ…
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Magnetoresistance measurements on the magnetic semiconductor (In,Mn)Sb suggest that magnetic scattering in this material is dominated by isolated Mn$^{2+}$ ions located outside the ferromagnetically-ordered regions when the system is below $T_{c}$. A model is proposed, based on the $p$-$d$ exchange between spin-polarized charge carriers and localized Mn$^{2+}$ ions, which accounts for the observed behavior both below and above the ferromagnetic phase transition. The suggested picture is further verified by high-pressure experiments, in which the degree of magnetic interaction can be varied in a controlled way.
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Submitted 24 May, 2005;
originally announced May 2005.
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Enhanced Granular Magnetoresistance due to Ferromagnetic Layers
Authors:
J. Balogh,
M. Csontos,
D. Kaptas,
G. Mihaly
Abstract:
Giant magnetoresistance (GMR) of sequentially evaporated Fe-Ag structures have been investigated. Direct experimental evidence is given that inserting ferromagnetic layers into a granular structure significantly enhances the magnetoresistance. The increase of the GMR effect is attributed to spin polarization effects. The large enhancement (up to more than a fourfold value) and the linear variati…
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Giant magnetoresistance (GMR) of sequentially evaporated Fe-Ag structures have been investigated. Direct experimental evidence is given that inserting ferromagnetic layers into a granular structure significantly enhances the magnetoresistance. The increase of the GMR effect is attributed to spin polarization effects. The large enhancement (up to more than a fourfold value) and the linear variation of the GMR in low magnetic fields are explained by scattering of the spin polarized conduction electrons on paramagnetic grains.
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Submitted 26 February, 2002;
originally announced February 2002.
