Showing 1–43 of 43 results for author: Crowell, P A

Few-Mode and Anisotropic Quantum Transport in InSb Nanoribbons Using an All-van der Waals Material-Based Gate

Authors: Colin J. Riggert, Pim Lueb, Tyler Littmann, Ghada Badawy, Marco Rossi, Paul A. Crowell, Erik P. A. M. Bakkers, Vlad S. Pribiag

Abstract: High-quality electrostatic gating is a fundamental ingredient for successful semiconducting device physics, and a key element of realizing clean quantum transport. Inspired by the widespread improvement of transport quality when two-dimensional van der Waals (vdW) materials are gated exclusively by other vdW materials, we have developed a method for gating non-vdW materials with an all-vdW gate st… ▽ More High-quality electrostatic gating is a fundamental ingredient for successful semiconducting device physics, and a key element of realizing clean quantum transport. Inspired by the widespread improvement of transport quality when two-dimensional van der Waals (vdW) materials are gated exclusively by other vdW materials, we have developed a method for gating non-vdW materials with an all-vdW gate stack, consisting of a hexagonal boron nitride dielectric layer and a few-layer graphite gate electrode. We demonstrate this gating approach on MOVPE-grown InSb nanoribbons (NRs), a novel variant of the InSb nanowire, with a flattened cross-section. In our all-vdW gated NR devices we observe conductance features that are reproducible and have low- to near-zero gate hysteresis. We also report quantized conductance, which persists to lower magnetic fields and longer channel lengths than typical InSb nanowire devices reported to date. Additionally, we observe level splitting that is highly anisotropic in an applied magnetic field, which we attribute to the ribbon cross-section. The performance of our devices is consistent with the reduced disorder expected from the all-vdW gating scheme, and marks the first report of ballistic, few-modes quantum transport in a non-vdW material with an all-vdW gate. Our results establish all-vdW gating as a promising approach for high-quality gating of non-vdW materials for quantum transport, which is in principle applicable generically, beyond InSb systems. In addition, the work showcases the specific potential of all-vdW gate/InSb NR devices for enabling clean quantum devices that may be relevant for spintronics and topological superconductivity studies. △ Less

Submitted 29 January, 2025; originally announced January 2025.

Comments: 25 pages, 4 figures, plus supplementary material

Competing Uniaxial Anisotropies in Epitaxial Fe Thin Films Grown on InAs(001)

Authors: James M. Etheridge, Joseph Dill, Connor P. Dempsey, Mihir Pendharkar, Javier Garcia-Barriocanal, Guichuan Yu, Vlad S. Pribiag, Paul A. Crowell, Chris J. Palmstrøm

Abstract: We report on the interplay of two uniaxial magnetic anisotropies in epitaxial Fe thin films of varying thickness grown on InAs(001) as observed in ferromagnetic resonance experiments. One anisotropy originates from the Fe/InAs interface while the other originates from in-plane shear strain resulting from the anisotropic relaxation of the Fe film. X-ray diffraction was used to measure the in-plane… ▽ More We report on the interplay of two uniaxial magnetic anisotropies in epitaxial Fe thin films of varying thickness grown on InAs(001) as observed in ferromagnetic resonance experiments. One anisotropy originates from the Fe/InAs interface while the other originates from in-plane shear strain resulting from the anisotropic relaxation of the Fe film. X-ray diffraction was used to measure the in-plane lattice constants of the Fe films, confirming the correlation between the onset of film relaxation and the corresponding shear strain inferred from ferromagnetic resonance data. These results are relevant for ongoing efforts to develop spintronic and quantum devices utilizing large spin-orbit coupling in III-V semiconductors. △ Less

Submitted 23 May, 2023; originally announced May 2023.

Comments: 5 figures

First Principles Study of the Electronic Structure of the Ni$_2$MnIn/InAs and Ti$_2$MnIn/InSb interfaces

Authors: Brett Heischmidt, Maituo Yu, Derek Dardzinski, James Etheridge, Saeed Moayedpour, Vlad S. Pribiag, Paul A. Crowell, Noa Marom

Abstract: We present a first-principles study of the electronic and magnetic properties of epitaxial interfaces between the Heusler compounds Ti$_2$MnIn and Ni$_2$MnIn and the III-V semiconductors, InSb and InAs, respectively. We use density functional theory (DFT) with a machine-learned Hubbard $U$ correction determined by Bayesian optimization. We evaluate these interfaces for prospective applications in… ▽ More We present a first-principles study of the electronic and magnetic properties of epitaxial interfaces between the Heusler compounds Ti$_2$MnIn and Ni$_2$MnIn and the III-V semiconductors, InSb and InAs, respectively. We use density functional theory (DFT) with a machine-learned Hubbard $U$ correction determined by Bayesian optimization. We evaluate these interfaces for prospective applications in Majorana-based quantum computing and spintronics. In both interfaces, states from the Heusler penetrate into the gap of the semiconductor, decaying within a few atomic layers. The magnetic interactions at the interface are weak and local in space and energy. Magnetic moments of less than 0.1 $μ_B$ are induced in the two atomic layers closest to the interface. The induced spin polarization around the Fermi level of the semiconductor also decays within a few atomic layers. The decisive factor for the induced spin polarization around the Fermi level of the semiconductor is the spin polarization around the Fermi level in the Heusler, rather than the overall magnetic moment. As a result, the ferrimagnetic narrow-gap semiconductor Ti$_2$MnIn induces a more significant spin polarization in the InSb than the ferromagnetic metal Ni$_2$MnIn induces in the InAs. This is explained by the position of the transition metal $d$ states in the Heusler with respect to the Fermi level. Based on our results, these interfaces are unlikely to be useful for Majorana devices but could be of interest for spintronics. △ Less

Submitted 7 January, 2023; v1 submitted 28 September, 2022; originally announced September 2022.

Oscillations and confluence in three-magnon scattering of ferromagnetic resonance

Authors: Tao Qu, Alex Hamill, R. H. Victora, P. A. Crowell

Abstract: We have performed a time-resolved and phase-sensitive investigation of three-magnon scattering of ferromagnetic resonance (FMR) over several orders of magnitude in excitation power. We observe a regime that hosts transient oscillations of the FMR magnon population, despite higher-order magnon interactions at large powers. Also at high powers, the scattering generates $180^\circ$ phase shifts of th… ▽ More We have performed a time-resolved and phase-sensitive investigation of three-magnon scattering of ferromagnetic resonance (FMR) over several orders of magnitude in excitation power. We observe a regime that hosts transient oscillations of the FMR magnon population, despite higher-order magnon interactions at large powers. Also at high powers, the scattering generates $180^\circ$ phase shifts of the FMR magnons. These phase shifts correspond to reversals in the three-magnon scattering direction, between splitting and confluence. These scattering reversals are most directly observed after removing the microwave excitation, generating coherent oscillations of the FMR magnon population much larger than its steady-state value during the excitation. Our model is in strong agreement with these findings. These findings reveal the transient behavior of this three-magnon scattering process, and the nontrivial interplay between three-magnon scattering and the magnons' phases. △ Less

Submitted 31 December, 2022; v1 submitted 25 April, 2022; originally announced April 2022.

Triggering phase-coherent spin packets by pulsed electrical spin injection across an Fe/GaAs Schottky barrier

Authors: L. R. Schreiber, C. Schwark, G. Güntherodt, M. Lepsa, C. Adelmann, C. J. Palmstrøm, X. Lou, P. A. Crowell, B. Beschoten

Abstract: The precise control of spins in semiconductor spintronic devices requires electrical means for generating spin packets with a well-defined initial phase. We demonstrate a pulsed electrical scheme that triggers the spin ensemble phase in a similar way as circularly-polarized optical pulses are generating phase coherent spin packets. Here, we use fast current pulses to initialize phase coherent spin… ▽ More The precise control of spins in semiconductor spintronic devices requires electrical means for generating spin packets with a well-defined initial phase. We demonstrate a pulsed electrical scheme that triggers the spin ensemble phase in a similar way as circularly-polarized optical pulses are generating phase coherent spin packets. Here, we use fast current pulses to initialize phase coherent spin packets, which are injected across an Fe/GaAs Schottky barrier into $n$-GaAs. By means of time-resolved Faraday rotation, we demonstrate phase coherence by the observation of multiple Larmor precession cycles for current pulse widths down to 500 ps at 17 K. We show that the current pulses are broadened by the charging and discharging time of the Schottky barrier. At high frequencies, the observable spin coherence is limited only by the finite band width of the current pulses, which is on the order of 2 GHz. These results therefore demonstrate that all-electrical injection and phase control of electron spin packets at microwave frequencies is possible in metallic-ferromagnet/semiconductor heterostructures. △ Less

Submitted 17 November, 2021; originally announced November 2021.

Comments: 14 pages, 9 figures

Journal ref: Phys. Rev. B 104, 195202 (2021)

Anomalous temperature dependence of phonon pumping by ferromagnetic resonance in Co/Pd multilayers with perpendicular anisotropy

Authors: William K. Peria, De-Lin Zhang, Yihong Fan, Jian-Ping Wang, Paul A. Crowell

Abstract: We demonstrate the pumping of phonons by ferromagnetic resonance in a series of [Co(0.8 nm)/Pd(1.5 nm)]$_n$ multilayers ($n =$ 6, 11, 15, and 20) with large magnetostriction and perpendicular magnetic anisotropy. The effect is shown using broadband ferromagnetic resonance over a range of temperatures (10 to 300 K), where a resonant damping enhancement is observed at frequencies corresponding to st… ▽ More We demonstrate the pumping of phonons by ferromagnetic resonance in a series of [Co(0.8 nm)/Pd(1.5 nm)]$_n$ multilayers ($n =$ 6, 11, 15, and 20) with large magnetostriction and perpendicular magnetic anisotropy. The effect is shown using broadband ferromagnetic resonance over a range of temperatures (10 to 300 K), where a resonant damping enhancement is observed at frequencies corresponding to standing wave phonons across the multilayer. The strength of this effect is enhanced by approximately a factor of 4 at 10 K compared to room temperature, which is anomalous in the sense that the temperature dependence of the magnetostriction predicts an enhancement that is less than a factor of 2. Lastly, we demonstrate that the damping enhancement is correlated with a shift in the ferromagnetic resonance field as predicted quantitatively from linear response theory. △ Less

Submitted 4 October, 2021; originally announced October 2021.

Comments: 10 pages, 11 figures

Spin-helical detection in a semiconductor quantum device with ferromagnetic contacts

Authors: Zedong Yang, Paul A. Crowell, Vlad S. Pribiag

Abstract: Spin-helical states, which arise in quasi-one-dimensional (1D) channels with spin-orbital (SO) coupling, underpin efforts to realize topologically-protected quantum bits based on Majorana modes in semiconductor nanowires. Detecting helical states is challenging due to non-idealities present in real devices. Here we show by means of tight-binding calculations that by using ferromagnetic contacts it… ▽ More Spin-helical states, which arise in quasi-one-dimensional (1D) channels with spin-orbital (SO) coupling, underpin efforts to realize topologically-protected quantum bits based on Majorana modes in semiconductor nanowires. Detecting helical states is challenging due to non-idealities present in real devices. Here we show by means of tight-binding calculations that by using ferromagnetic contacts it is possible to detect helical modes with high sensitivity even in the presence of realistic device effects, such as quantum interference. This is possible because of the spin-selective transmission properties of helical modes. In addition, we show that spin-polarized contacts provide a unique path to investigate the spin texture and spin-momentum locking properties of helical states. Our results are of interest not only for the ongoing development of Majorana qubits, but also as for realizing possible spin-based quantum devices, such as quantum spin modulators and interconnects based on spin-helical channels. △ Less

Submitted 6 April, 2021; originally announced April 2021.

Comments: 7 pages, 5 figures

Magnetoelastic Gilbert damping in magnetostrictive Fe$_{0.7}$Ga$_{0.3}$ thin films

Authors: William K. Peria, Xinjun Wang, Heshan Yu, Seunghun Lee, Ichiro Takeuchi, Paul A. Crowell

Abstract: We report an enhanced magnetoelastic contribution to the Gilbert damping in highly magnetostrictive Fe$_{0.7}$Ga$_{0.3}$ thin films. This effect is mitigated for perpendicular-to-plane fields, leading to a large anisotropy of the Gilbert damping in all of the films (up to a factor of 10 at room temperature). These claims are supported by broadband measurements of the ferromagnetic resonance linewi… ▽ More We report an enhanced magnetoelastic contribution to the Gilbert damping in highly magnetostrictive Fe$_{0.7}$Ga$_{0.3}$ thin films. This effect is mitigated for perpendicular-to-plane fields, leading to a large anisotropy of the Gilbert damping in all of the films (up to a factor of 10 at room temperature). These claims are supported by broadband measurements of the ferromagnetic resonance linewidths over a range of temperatures (5 to 400 K), which serve to elucidate the effect of both the magnetostriction and phonon relaxation on the magnetoelastic Gilbert damping. △ Less

Submitted 11 March, 2021; originally announced March 2021.

Comments: 13 pages, 12 figures

Journal ref: Phys. Rev. B 103, 220403 (2021)

Two-magnon frequency-pulling effect in ferromagnetic resonance

Authors: W. K. Peria, H. Yu, S. Lee, I. Takeuchi, P. A. Crowell

Abstract: We report the experimental observation in thin films of the hybridization of the uniform ferromagnetic resonance mode with nonuniform magnons as a result of the two-magnon scattering mechanism, leading to a frequency-pulling effect on the ferromagnetic resonance. This effect, when not properly accounted for, leads to a discrepancy in the dependence of the ferromagnetic resonance field on frequency… ▽ More We report the experimental observation in thin films of the hybridization of the uniform ferromagnetic resonance mode with nonuniform magnons as a result of the two-magnon scattering mechanism, leading to a frequency-pulling effect on the ferromagnetic resonance. This effect, when not properly accounted for, leads to a discrepancy in the dependence of the ferromagnetic resonance field on frequency for different field orientations. The frequency-pulling effect is the complement of the broadening of the ferromagnetic resonance lineshape by two-magnon scattering and can be calculated using the same parameters. By accounting for the two-magnon frequency shifts through these means, consistency is achieved in fitting data from in-plane and perpendicular-to-plane resonance conditions. △ Less

Submitted 26 October, 2020; v1 submitted 7 August, 2020; originally announced August 2020.

Comments: 4 pages, 4 figures

Spin transport in ferromagnet-InSb nanowire quantum devices

Authors: Zedong Yang, Brett Heischmidt, Sasa Gazibegovic, Ghada Badawy, Diana Car, Paul A. Crowell, Erik P. A. M. Bakkers, Vlad S. Pribiag

Abstract: Signatures of Majorana zero modes (MZMs), which are the building blocks for fault-tolerant topological quantum computing, have been observed in semiconductor nanowires (NW) with strong spin-orbital-interaction (SOI), such as InSb and InAs NWs with proximity-induced superconductivity. Realizing topological superconductivity and MZMs in this most widely-studied platform also requires eliminating spi… ▽ More Signatures of Majorana zero modes (MZMs), which are the building blocks for fault-tolerant topological quantum computing, have been observed in semiconductor nanowires (NW) with strong spin-orbital-interaction (SOI), such as InSb and InAs NWs with proximity-induced superconductivity. Realizing topological superconductivity and MZMs in this most widely-studied platform also requires eliminating spin degeneracy, which is realized by applying a magnetic field to induce a helical gap. However, the applied field can adversely impact the induced superconducting state in the NWs and also places geometric restrictions on the device, which can affect scaling of future MZM-based quantum registers. These challenges could be circumvented by integrating magnetic elements with the NWs. With this motivation, in this work we report the first experimental investigation of spin transport across InSb NWs, which are enabled by devices with ferromagnetic (FM) contacts. We observe signatures of spin polarization and spin-dependent transport in the quasi-one-dimensional ballistic regime. Moreover, we show that electrostatic gating tunes the observed magnetic signal and also reveals a transport regime where the device acts as a spin filter. These results open an avenue towards developing MZM devices in which spin degeneracy is lifted locally, without the need of an applied magnetic field. They also provide a path for realizing spin-based devices that leverage spin-orbital states in quantum wires. △ Less

Submitted 16 September, 2019; originally announced September 2019.

Comments: 30 pages, 12 figures

Journal ref: Nano Letters 20, 3232 (2020)

The interplay of large two-magnon ferromagnetic resonance linewidths and low Gilbert damping in Heusler thin films

Authors: William K. Peria, Timothy A. Peterson, Anthony P. McFadden, Tao Qu, Changjiang Liu, Chris J. Palmstrøm, Paul A. Crowell

Abstract: We report on broadband ferromagnetic resonance linewidth measurements performed on epitaxial Heusler thin films. A large and anisotropic two-magnon scattering linewidth broadening is observed for measurements with the magnetization lying in the film plane, while linewidth measurements with the magnetization saturated perpendicular to the sample plane reveal low Gilbert damping constants of… ▽ More We report on broadband ferromagnetic resonance linewidth measurements performed on epitaxial Heusler thin films. A large and anisotropic two-magnon scattering linewidth broadening is observed for measurements with the magnetization lying in the film plane, while linewidth measurements with the magnetization saturated perpendicular to the sample plane reveal low Gilbert damping constants of $(1.5\pm0.1)\times 10^{-3}$, $(1.8\pm0.2)\times 10^{-3}$, and $<8\times 10^{-4}$ for Co$_2$MnSi/MgO, Co$_2$MnAl/MgO, and Co$_2$FeAl/MgO, respectively. The in-plane measurements are fit to a model combining Gilbert and two-magnon scattering contributions to the linewidth, revealing a characteristic disorder lengthscale of 10-100 nm. △ Less

Submitted 9 April, 2020; v1 submitted 6 September, 2019; originally announced September 2019.

Comments: 8 pages, 5 figures

Journal ref: Phys. Rev. B 101, 134430 (2020)

Spin absorption by in situ deposited nanoscale magnets on graphene spin valves

Authors: Walid Amamou, Gordon Stecklein, Steven J. Koester, Paul A. Crowell, Roland K. Kawakami

Abstract: An in situ measurement of spin transport in a graphene nonlocal spin valve is used to quantify the spin current absorbed by a small (250 nm $\times$ 750 nm) metallic island. The experiment allows for successive depositions of either Fe or Cu without breaking vacuum, so that the thickness of the island is the only parameter that is varied. Furthermore, by measuring the effect of the island using se… ▽ More An in situ measurement of spin transport in a graphene nonlocal spin valve is used to quantify the spin current absorbed by a small (250 nm $\times$ 750 nm) metallic island. The experiment allows for successive depositions of either Fe or Cu without breaking vacuum, so that the thickness of the island is the only parameter that is varied. Furthermore, by measuring the effect of the island using separate contacts for injection and detection, we isolate the effect of spin absorption from any change in the spin injection and detection mechanisms. As inferred from the thickness dependence, the effective spin current $j_e = \frac{2e}{\hbar} j_s$ absorbed by Fe is as large as $10^8$ A/m$^2$. The maximum value of $j_e$ is limited by the resistance-area product of the graphene/Fe interface, which is as small as 3 $Ωμ$m$^2$. The spin current absorbed by the same thickness of Cu is smaller than for Fe, as expected given the longer spin diffusion length and larger spin resistance of Cu compared to Fe. These results allow for a quantitative assessment of the prospects for achieving spin transfer torque switching of a nanomagnet using a graphene-based nonlocal spin valve. △ Less

Submitted 5 April, 2018; originally announced April 2018.

Comments: 20 pages, includes supplemental information

Journal ref: Phys. Rev. Applied 10, 044050 (2018)

Using Programmable Graphene Channels as Weights in Spin-Diffusive Neuromorphic Computing

Authors: Jiaxi Hu, Gordon Stecklein, Yoska Anugrah, Paul A. Crowell, Steven J. Koester

Abstract: A graphene-based spin-diffusive (GrSD) neural network is presented in this work that takes advantage of the locally tunable spin transport of graphene and the non-volatility of nanomagnets. By using electrostatically gated graphene as spintronic synapses, a weighted summation operation can be performed in the spin domain while the weights can be programmed using circuits in the charge domain. Four… ▽ More A graphene-based spin-diffusive (GrSD) neural network is presented in this work that takes advantage of the locally tunable spin transport of graphene and the non-volatility of nanomagnets. By using electrostatically gated graphene as spintronic synapses, a weighted summation operation can be performed in the spin domain while the weights can be programmed using circuits in the charge domain. Four-component spin/charge circuit simulations coupled to magnetic dynamics are used to show the feasibility of the neuron-synapse functionality and quantify the analog weighting capability of the graphene under different spin relaxation mechanisms. By realizing transistor-free weight implementation, the graphene spin-diffusive neural network reduces the energy consumption to 0.08-0.32 fJ per cell-synapse and achieves significantly better scalability compared to its digital counterparts, particularly as the number and bit accuracy of the synapses increases. △ Less

Submitted 1 December, 2017; originally announced December 2017.

Comments: 8 pages, 12 figures

Suppression of the fieldlike spin-orbit torque efficiency due to the magnetic proximity effect in ferromagnet/platinum bilayers

Authors: T. A. Peterson, A. P. McFadden, C. J. Palmstrøm, P. A. Crowell

Abstract: Current-induced spin-orbit torques in Co$_2$FeAl/Pt ultrathin bilayers are studied using a magnetoresistive harmonic response technique, which distinguishes the dampinglike and fieldlike contributions. The presence of a temperature-dependent magnetic proximity effect is observed through the anomalous Hall and anisotropic magnetoresistances, which are enhanced at low temperatures for thin platinum… ▽ More Current-induced spin-orbit torques in Co$_2$FeAl/Pt ultrathin bilayers are studied using a magnetoresistive harmonic response technique, which distinguishes the dampinglike and fieldlike contributions. The presence of a temperature-dependent magnetic proximity effect is observed through the anomalous Hall and anisotropic magnetoresistances, which are enhanced at low temperatures for thin platinum thicknesses. The fieldlike torque efficiency decreases steadily as the temperature is lowered for all Pt thicknesses studied, which we propose is related to the influence of the magnetic proximity effect on the fieldlike torque mechanism. △ Less

Submitted 21 November, 2017; v1 submitted 21 November, 2017; originally announced November 2017.

Journal ref: Phys. Rev. B 97, 020403 (2018)

Theory of Kondo suppression of spin polarization in nonlocal spin valves

Authors: Kyoung-Whan Kim, Liam O'Brien, Paul A. Crowell, Chris Leighton, Mark D. Stiles

Abstract: We theoretically analyze contributions from the Kondo effect to the spin polarization and spin diffusion length in all-metal nonlocal spin valves. Interdiffusion of ferromagnetic atoms into the normal metal layer creates a region in which Kondo physics plays a significant role, giving discrepancies between experiment and existing theory. We start from a simple model and construct a modified spin d… ▽ More We theoretically analyze contributions from the Kondo effect to the spin polarization and spin diffusion length in all-metal nonlocal spin valves. Interdiffusion of ferromagnetic atoms into the normal metal layer creates a region in which Kondo physics plays a significant role, giving discrepancies between experiment and existing theory. We start from a simple model and construct a modified spin drift-diffusion equation which clearly demonstrates how the Kondo physics not only suppresses the electrical conductivity but even more strongly reduces the spin diffusion length. We also present an explicit expression for the suppression of spin polarization due to Kondo physics in an illustrative regime. We compare this theory to previous experimental data to extract an estimate of the Elliot-Yafet probability for Kondo spin flip scattering of 0.7 $\pm$ 0.4, in good agreement with the value of 2/3 derived in the original theory of Kondo. △ Less

Submitted 29 December, 2016; originally announced December 2016.

Comments: 15 pages, 4 figures

Journal ref: Phys. Rev. B 95, 104404 (2017)

Spin injection and detection up to room temperature in Heusler~alloy/$n$-GaAs spin valves

Authors: T. A. Peterson, S. J. Patel, C. C. Geppert, K. D. Christie, A. Rath, D. Pennachio, M. E. Flatté, P. M. Voyles, C. J. Palmstrøm, P. A. Crowell

Abstract: We have measured the spin injection efficiency and spin lifetime in Co$_2$FeSi/$n$-GaAs lateral nonlocal spin valves from 20 to 300 K. We observe large ($\sim$40 $μ$V) spin valve signals at room temperature and injector currents of $10^3~$A/cm$^2$, facilitated by fabricating spin valve separations smaller than the 1 $μ$m spin diffusion length and applying a forward bias to the detector contact. Th… ▽ More We have measured the spin injection efficiency and spin lifetime in Co$_2$FeSi/$n$-GaAs lateral nonlocal spin valves from 20 to 300 K. We observe large ($\sim$40 $μ$V) spin valve signals at room temperature and injector currents of $10^3~$A/cm$^2$, facilitated by fabricating spin valve separations smaller than the 1 $μ$m spin diffusion length and applying a forward bias to the detector contact. The spin transport parameters are measured by comparing the injector-detector contact separation dependence of the spin valve signal with a numerical model accounting for spin drift and diffusion. The apparent suppression of the spin injection efficiency at the lowest temperatures reflects a breakdown of the ordinary drift-diffusion model in the regime of large spin accumulation. A theoretical calculation of the D'yakonov-Perel spin lifetime agrees well with the measured $n$-GaAs spin lifetime over the entire temperature range. △ Less

Submitted 12 October, 2016; originally announced October 2016.

Comments: 8 figures

Anisotropic spin relaxation in $n$-GaAs from strong inhomogeneous hyperfine fields produced by the dynamical polarization of nuclei

Authors: N. J. Harmon, T. A. Peterson, C. C. Geppert, S. J. Patel, C. J. Palmstrøm, P. A. Crowell, M. E. Flatté

Abstract: The hyperfine field from dynamically polarized nuclei in n-GaAs is very spatially inhomogeneous, as the nu- clear polarization process is most efficient near the randomly-distributed donors. Electrons with polarized spins traversing the bulk semiconductor will experience this inhomogeneous hyperfine field as an effective fluctuating spin precession rate, and thus the spin polarization of an electr… ▽ More The hyperfine field from dynamically polarized nuclei in n-GaAs is very spatially inhomogeneous, as the nu- clear polarization process is most efficient near the randomly-distributed donors. Electrons with polarized spins traversing the bulk semiconductor will experience this inhomogeneous hyperfine field as an effective fluctuating spin precession rate, and thus the spin polarization of an electron ensemble will relax. A theory of spin relaxation based on the theory of random walks is applied to such an ensemble precessing in an oblique magnetic field, and the precise form of the (unequal) longitudinal and transverse spin relaxation analytically derived. To investigate this mechanism, electrical three-terminal Hanle measurements were performed on epitaxially grown Co$_2$MnSi/$n$-GaAs heterostructures fabricated into electrical spin injection devices. The proposed anisotropic spin relaxation mechanism is required to satisfactorily describe the Hanle lineshapes when the applied field is oriented at large oblique angles. △ Less

Submitted 10 August, 2015; originally announced August 2015.

Comments: submitted to Physical Review B Rapid Communications, 5 pages, 3 figures

Journal ref: Phys. Rev. B 92, 140201 (2015)

Dynamic detection of electron spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance

Authors: Changjiang Liu, Sahil J. Patel, Timothy A. Peterson, Chad C. Geppert, Kevin D. Christie, Chris J. Palmstrøm, Paul A. Crowell

Abstract: A distinguishing feature of spin accumulation in ferromagnet-semiconductor devices is precession of the non-equilibrium spin population of the semiconductor in a magnetic field. This is the basis for detection techniques such as the Hanle effect, but these approaches become less effective as the spin lifetime in the semiconductor decreases. For this reason, no electrical Hanle measurement has been… ▽ More A distinguishing feature of spin accumulation in ferromagnet-semiconductor devices is precession of the non-equilibrium spin population of the semiconductor in a magnetic field. This is the basis for detection techniques such as the Hanle effect, but these approaches become less effective as the spin lifetime in the semiconductor decreases. For this reason, no electrical Hanle measurement has been demonstrated in GaAs at room temperature. We show here that by forcing the magnetization in the ferromagnet (the spin injector and detector) to precess at the ferromagnetic resonance frequency, an electrically generated spin accumulation can be detected from 30 to 300 K. At low temperatures, the distinct Larmor precession of the spin accumulation in the semiconductor can be detected by ferromagnetic resonance in an oblique field. We verify the effectiveness of this new spin detection technique by comparing the injection bias and temperature dependence of the measured spin signal to the results obtained using traditional methods. We further show that this new approach enables a measurement of short spin lifetimes (< 100 psec), a regime that is not accessible in semiconductors using traditional Hanle techniques. △ Less

Submitted 9 August, 2015; originally announced August 2015.

Comments: 4 figures

Journal ref: Nat. Commun. 7, 10296 (2016)

Knight shift and nuclear spin relaxation in Fe/n-GaAs heterostructures

Authors: Kevin D. Christie, Chad C. Geppert, Sahil J. Patel, Q. O. Hu, Chris J. Palmstrøm, Paul A. Crowell

Abstract: We investigate the dynamically polarized nuclear-spin system in Fe/\emph{n}-GaAs heterostructures using the response of the electron-spin system to nuclear magnetic resonance (NMR) in lateral spin-valve devices. The hyperfine interaction is known to act more strongly on donor-bound electron states than on those in the conduction band. We provide a quantitative model of the temperature dependence o… ▽ More We investigate the dynamically polarized nuclear-spin system in Fe/\emph{n}-GaAs heterostructures using the response of the electron-spin system to nuclear magnetic resonance (NMR) in lateral spin-valve devices. The hyperfine interaction is known to act more strongly on donor-bound electron states than on those in the conduction band. We provide a quantitative model of the temperature dependence of the occupation of donor sites. With this model we calculate the ratios of the hyperfine and quadrupolar nuclear relaxation rates of each isotope. For all temperatures measured, quadrupolar relaxation limits the spatial extent of nuclear spin-polarization to within a Bohr radius of the donor sites and is directly responsible for the isotope dependence of the measured NMR signal amplitude. The hyperfine interaction is also responsible for the $2\text{ kHz}$ Knight shift of the nuclear resonance frequency that is measured as a function of the electron spin accumulation. The Knight shift is shown to provide a measurement of the electron spin-polarization that agrees qualitatively with standard spin transport measurements. △ Less

Submitted 19 October, 2015; v1 submitted 2 June, 2014; originally announced June 2014.

Comments: 7 figures - accepted for publication in Phys. Rev. B

Journal ref: Phys. Rev. B 92, 155204 (2015)

Resonance in Magnetostatically Coupled Transverse Domain Walls

Authors: Andrew T. Galkiewicz, Liam O'Brien, Paul S. Keatley, Russell P. Cowburn, Paul A. Crowell

Abstract: We have observed the eigenmodes of coupled transverse domain walls in a pair of ferromagnetic nanowires. Although the pair is coupled magnetostatically, its spectrum is determined by a combination of pinning by edge roughness and dipolar coupling of the two walls. Because the corresponding energy scales are comparable, the coupling can be observed only at the smallest wire separations. A model of… ▽ More We have observed the eigenmodes of coupled transverse domain walls in a pair of ferromagnetic nanowires. Although the pair is coupled magnetostatically, its spectrum is determined by a combination of pinning by edge roughness and dipolar coupling of the two walls. Because the corresponding energy scales are comparable, the coupling can be observed only at the smallest wire separations. A model of the coupled wall dynamics reproduces the experiment quantitatively, allowing for comparisons with the estimated pinning and domain wall coupling energies. The results have significant implications for the dynamics of devices based on coupled domain walls. △ Less

Submitted 28 July, 2014; v1 submitted 13 February, 2014; originally announced February 2014.

Comments: 11 pages, 4 figures

Electromotive Force Generated by Spin Accumulation in FM/$n$-GaAs Heterostructures

Authors: Chad C. Geppert, Lee R. Wienkes, Kevin D. Christie, Sahil J. Patel, Chris J. Palmstrøm, Paul A. Crowell

Abstract: We report on a method of quantifying spin accumulation in Co$_{2}$MnSi/$n$-GaAs and Fe/$n$-GaAs heterostructures using a non-magnetic probe. In the presence of a large non-equilibrium spin polarization, the combination of a non-constant density of states and energy-dependent conductivity generates an electromotive force (EMF). We demonstrate that this signal dephases in the presence of applied and… ▽ More We report on a method of quantifying spin accumulation in Co$_{2}$MnSi/$n$-GaAs and Fe/$n$-GaAs heterostructures using a non-magnetic probe. In the presence of a large non-equilibrium spin polarization, the combination of a non-constant density of states and energy-dependent conductivity generates an electromotive force (EMF). We demonstrate that this signal dephases in the presence of applied and hyperfine fields, scales quadratically with the polarization, and is comparable in magnitude to the spin-splitting. Since this spin-generated EMF depends only on experimentally accessible parameters of the bulk material, its magnitude may be used to quantify the injected spin polarization in absolute terms. △ Less

Submitted 11 February, 2014; originally announced February 2014.

Comments: 4 figures, submitted to Phys. Rev. Lett

Triggering and probing of phase-coherent spin packets by time-resolved spin transport across an Fe/GaAs Schottky barrier

Authors: L. R. Schreiber, C. Schwark, S. Richter, C. Weier, G. Güntherodt, C. Adelmann, C. J. Palmstrom, X. Lou, P. A. Crowell, B. Beschoten

Abstract: Time-resolved electrical spin transport is used to generate and probe spin currents in GaAs electrically. We use high bandwidth current pulses to inject phase-coherent spin packets from Fe into n-GaAs. By means of time-resolved Faraday rotation we demonstrate that spins are injected with a clearly defined phase by the observation of multiple Larmor precession cycles. We furthermore show that spin… ▽ More Time-resolved electrical spin transport is used to generate and probe spin currents in GaAs electrically. We use high bandwidth current pulses to inject phase-coherent spin packets from Fe into n-GaAs. By means of time-resolved Faraday rotation we demonstrate that spins are injected with a clearly defined phase by the observation of multiple Larmor precession cycles. We furthermore show that spin precession of optically created spin packets in n-GaAs can be probed electrically by spin-polarized photo-current pulses. The injection and detection experiments are not direct reciprocals of each other. In particular, we find that interfacial spin accumulation generated by the photocurrent pulse plays a critical role in time-resolved electrical spin detection. △ Less

Submitted 19 April, 2012; originally announced April 2012.

Comments: 11 pages, 4 figures

Surface Roughness Dominated Pinning Mechanism of Magnetic Vortices in Soft Ferromagnetic Films

Authors: Te-Yu Chen, Michael J. Erickson, Chris Leighton, Paul A. Crowell

Abstract: Although pinning of domain walls in ferromagnets is ubiquitous, the absence of an appropriate characterization tool has limited the ability to correlate the physical and magnetic microstructures of ferromagnetic films with specific pinning mechanisms. Here, we show that the pinning of a magnetic vortex, the simplest possible domain structure in soft ferromagnets, is strongly correlated with surfac… ▽ More Although pinning of domain walls in ferromagnets is ubiquitous, the absence of an appropriate characterization tool has limited the ability to correlate the physical and magnetic microstructures of ferromagnetic films with specific pinning mechanisms. Here, we show that the pinning of a magnetic vortex, the simplest possible domain structure in soft ferromagnets, is strongly correlated with surface roughness, and we make a quantitative comparison of the pinning energy and spatial range in films of various thickness. The results demonstrate that thickness fluctuations on the lateral length scale of the vortex core diameter, i.e. an effective roughness at a specific length scale, provides the dominant pinning mechanism. We argue that this mechanism will be important in virtually any soft ferromagnetic film. △ Less

Submitted 5 January, 2012; originally announced January 2012.

Comments: 4 figures

Electrical Measurement of the Direct Spin Hall Effect in Fe/In_xGa_{1-x}As Heterostructures

Authors: E. S. Garlid, Q. O. Hu, M. K. Chan, C. J. Palmstrom, P. A. Crowell

Abstract: We report on an all-electrical measurement of the spin Hall effect in epitaxial Fe/In_{x}Ga_{1-x}As heterostructures with n-type channel doping (Si) and highly doped Schottky tunnel barriers. A transverse spin current generated by an ordinary charge current flowing in the In_{x}Ga_{1-x}As is detected by measuring the spin accumulation at the edges of the channel. The spin accumulation is identifie… ▽ More We report on an all-electrical measurement of the spin Hall effect in epitaxial Fe/In_{x}Ga_{1-x}As heterostructures with n-type channel doping (Si) and highly doped Schottky tunnel barriers. A transverse spin current generated by an ordinary charge current flowing in the In_{x}Ga_{1-x}As is detected by measuring the spin accumulation at the edges of the channel. The spin accumulation is identified through the observation of a Hanle effect in the Hall voltage measured by pairs of ferromagnetic contacts. We investigate the bias and temperature dependence of the resulting Hanle signal and determine the skew and side-jump contributions to the total spin Hall conductivity. △ Less

Submitted 6 June, 2010; originally announced June 2010.

Comments: 10 pages, submitted to Phys. Rev. Lett

Hyperfine Interactions and Spin Transport in Ferromagnet-Semiconductor Heterostructures

Authors: M. K. Chan, Q. O. Hu, J. Zhang, T. Kondo, C. J. Palmstrøm, P. A. Crowell

Abstract: Measurements and modeling of electron spin transport and dynamics are used to characterize hyperfine interactions in Fe/GaAs devices with $n$-GaAs channels. Ga and As nuclei are polarized by electrically injected electron spins, and the nuclear polarization is detected indirectly through the depolarization of electron spins in the hyperfine field. The dependence of the electron spin signal on in… ▽ More Measurements and modeling of electron spin transport and dynamics are used to characterize hyperfine interactions in Fe/GaAs devices with $n$-GaAs channels. Ga and As nuclei are polarized by electrically injected electron spins, and the nuclear polarization is detected indirectly through the depolarization of electron spins in the hyperfine field. The dependence of the electron spin signal on injector bias and applied field direction is modeled by a coupled drift-diffusion equation, including effective fields from both the electronic and nuclear polarizations. This approach is used to determine the electron spin polarization independently of the assumptions made in standard transport measurements. The extreme sensitivity of the electron spin dynamics to the nuclear spin polarization also facilitates the electrical detection of nuclear magnetic resonance. △ Less

Submitted 31 August, 2009; originally announced September 2009.

Comments: Submitted to Phys. Rev. B

Bias-controlled sensitivity of ferromagnet/semiconductor electrical spin detectors

Authors: S. A. Crooker, E. Garlid, A. N. Chantis, D. L. Smith, K. S. M. Reddy, Q. Hu, T. Kondo, C. J. Palmstrom, P. A. Crowell

Abstract: Using Fe/GaAs Schottky tunnel barriers as electrical spin detectors, we show that the magnitude and sign of their spin-detection sensitivities can be widely tuned with the voltage bias applied across the Fe/GaAs interface. Experiments and theory establish that this tunability derives not just simply from the bias dependence of the tunneling conductances $G_{\uparrow,\downarrow}$ (a property of t… ▽ More Using Fe/GaAs Schottky tunnel barriers as electrical spin detectors, we show that the magnitude and sign of their spin-detection sensitivities can be widely tuned with the voltage bias applied across the Fe/GaAs interface. Experiments and theory establish that this tunability derives not just simply from the bias dependence of the tunneling conductances $G_{\uparrow,\downarrow}$ (a property of the interface), but also from the bias dependence of electric fields in the semiconductor which can dramatically enhance or suppress spin-detection sensitivities. Electrons in GaAs with fixed polarization can therefore be made to induce either positive or negative voltage changes at spin detectors, and some detector sensitivities can be enhanced over ten-fold compared to the usual case of zero-bias spin detection. △ Less

Submitted 21 July, 2009; v1 submitted 5 September, 2008; originally announced September 2008.

Journal ref: Phys. Rev. B 80, 041305(R) (2009)

Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices

Authors: X. Lou, C. Adelmann, S. A. Crooker, E. S. Garlid, J. Zhang, S. M. Reddy, S. D. Flexner, C. J. Palmstrom, P. A. Crowell

Abstract: A longstanding goal of research in semiconductor spintronics is the ability to inject, modulate, and detect electron spin in a single device. A simple prototype consists of a lateral semiconductor channel with two ferromagnetic contacts, one of which serves as a source of spin-polarized electrons and the other as a detector. Based on work in analogous metallic systems, two important criteria hav… ▽ More A longstanding goal of research in semiconductor spintronics is the ability to inject, modulate, and detect electron spin in a single device. A simple prototype consists of a lateral semiconductor channel with two ferromagnetic contacts, one of which serves as a source of spin-polarized electrons and the other as a detector. Based on work in analogous metallic systems, two important criteria have emerged for demonstrating electrical detection of spin transport. The first is the measurement of a non-equilibrium spin population using a non-local ferromagnetic detector through which no charge current flows. The potential at the detection electrode should be sensitive to the relative magnetizations of the detector and the source electrodes, a property referred to as the spin-valve effect. A second and more rigorous test is the existence of a Hanle effect, which is the modulation and suppression of the spin valve signal due to precession and dephasing in a transverse magnetic field. Here we report on the observation of both the spin valve and Hanle effects in lateral devices consisting of epitaxial Fe Schottky tunnel barrier contacts on an n-doped GaAs channel. The dependence on transverse magnetic field, temperature, and contact separation are in good agreement with a model incorporating spin drift and diffusion. Spin transport is detected for both directions of current flow through the source electrode. The sign of the electrical detection signal is found to vary with the injection current and is correlated with the spin polarization in the GaAs channel determined by optical measurements. These results therefore demonstrate a fully electrical scheme for spin injection, transport, and detection in a lateral semiconductor device. △ Less

Submitted 31 December, 2006; originally announced January 2007.

Comments: Single PDF file with 4 Figures + supplementary information; submitted to Nature Physics 11/06

Journal ref: Nature Physics 3, 197 (2007)

Optical and electrical spin injection and spin transport in hybrid Fe/GaAs devices

Authors: S. A. Crooker, M. Furis, X. Lou, D. L. Smith, C. Adelmann, C. J. Palmstrom, P. A. Crowell

Abstract: We discuss methods for imaging the nonequilibrium spin polarization of electrons in Fe/GaAs spin transport devices. Both optically- and electrically-injected spin distributions are studied by scanning magneto-optical Kerr rotation microscopy. Related methods are used to demonstrate electrical spin detection of optically-injected spin polarized currents. Dynamical properties of spin transport are… ▽ More We discuss methods for imaging the nonequilibrium spin polarization of electrons in Fe/GaAs spin transport devices. Both optically- and electrically-injected spin distributions are studied by scanning magneto-optical Kerr rotation microscopy. Related methods are used to demonstrate electrical spin detection of optically-injected spin polarized currents. Dynamical properties of spin transport are inferred from studies based on the Hanle effect, and the influence of strain on spin transport data in these devices is discussed. △ Less

Submitted 28 November, 2006; originally announced November 2006.

Comments: 5 pages, 6 figs. ICPS-28 proceedings (July'06, Vienna) for J. Appl. Phys

Journal ref: Journal of Applied Physics 101, 081716 (2007)

Dynamics of Pinned Magnetic Vortices

Authors: R. L. Compton, P. A. Crowell

Abstract: We observe the dynamics of a single magnetic vortex in the presence of a random array of pinning sites. At low excitation amplitudes, the vortex core gyrates about its equilibrium position with a frequency that is characteristic of a single pinning site. At high amplitudes, the frequency of gyration is determined by the magnetostatic energy of the entire vortex, which is confined in a micron-sca… ▽ More We observe the dynamics of a single magnetic vortex in the presence of a random array of pinning sites. At low excitation amplitudes, the vortex core gyrates about its equilibrium position with a frequency that is characteristic of a single pinning site. At high amplitudes, the frequency of gyration is determined by the magnetostatic energy of the entire vortex, which is confined in a micron-scale disk. We observe a sharp transition between these two amplitude regimes that is due to depinning of the vortex core from a local defect. The distribution of pinning sites is determined by mapping fluctuations in the frequency as the vortex core is displaced by a static in-plane magnetic field. △ Less

Submitted 4 July, 2006; originally announced July 2006.

Comments: 4 Figures, submitted to Phys. Rev. Lett

Spin injection from perpendicular magnetized ferromagnetic $δ$-MnGa into (Al,Ga)As heterostructures

Authors: C. Adelmann, X. Lou, H. -S. Chiang, J. L. Hilton, B. D. Schultz, S. McKernan, P. A. Crowell, C. J. Palmstrom

Abstract: Electrical spin injection from ferromagnetic $δ$-MnGa into an (Al,Ga)As p-i-n light emitting diode (LED) is demonstrated. The $δ$-MnGa layers show strong perpendicular magnetocrystalline anisotropy, enabling detection of spin injection at remanence without an applied magnetic field. The bias and temperature dependence of the spin injection are found to be qualitatively similar to Fe-based spin L… ▽ More Electrical spin injection from ferromagnetic $δ$-MnGa into an (Al,Ga)As p-i-n light emitting diode (LED) is demonstrated. The $δ$-MnGa layers show strong perpendicular magnetocrystalline anisotropy, enabling detection of spin injection at remanence without an applied magnetic field. The bias and temperature dependence of the spin injection are found to be qualitatively similar to Fe-based spin LED devices. A Hanle effect is observed and demonstrates complete depolarization of spins in the semiconductor in a transverse magnetic field. △ Less

Submitted 31 May, 2006; originally announced June 2006.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 89, 112511 (2006?)

Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface

Authors: X. Lou, C. Adelmann, M. Furis, S. A. Crooker, C. J. Palmstrom, P. A. Crowell

Abstract: We show that the accumulation of spin-polarized electrons at a forward-biased Schottky tunnel barrier between Fe and n-GaAs can be detected electrically. The spin accumulation leads to an additional voltage drop across the barrier that is suppressed by a small transverse magnetic field, which depolarizes the spins in the semiconductor. The dependence of the electrical accumulation signal on magn… ▽ More We show that the accumulation of spin-polarized electrons at a forward-biased Schottky tunnel barrier between Fe and n-GaAs can be detected electrically. The spin accumulation leads to an additional voltage drop across the barrier that is suppressed by a small transverse magnetic field, which depolarizes the spins in the semiconductor. The dependence of the electrical accumulation signal on magnetic field, bias current, and temperature is in good agreement with the predictions of a drift-diffusion model for spin-polarized transport. △ Less

Submitted 3 February, 2006; originally announced February 2006.

Comments: Submitted to Phys. Rev. Lett

Interactions of spin waves with a magnetic vortex

Authors: J. P. Park, P. A. Crowell

Abstract: We have investigated azimuthal spin-wave modes in magnetic vortex structures using time-resolved Kerr microscopy. Spatially resolved phase and amplitude spectra of ferromagnetic disks with diameters from 5 $μ$m down to 500 nm reveal that the lowest order azimuthal spin wave mode splits into a doublet as the disk size decreases. We demonstrate that the splitting is due to the coupling between spi… ▽ More We have investigated azimuthal spin-wave modes in magnetic vortex structures using time-resolved Kerr microscopy. Spatially resolved phase and amplitude spectra of ferromagnetic disks with diameters from 5 $μ$m down to 500 nm reveal that the lowest order azimuthal spin wave mode splits into a doublet as the disk size decreases. We demonstrate that the splitting is due to the coupling between spin waves and the gyrotropic motion of the vortex core. △ Less

Submitted 25 August, 2005; originally announced August 2005.

Comments: 4 figures

Electron Spin Dynamics and Hyperfine Interactions in Fe/Al_0.1Ga_0.9As/GaAs Spin Injection Heterostructures

Authors: J. Strand, X. Lou, C. Adelmann, B. D. Schultz, A. F. Isakovic, C. J. Palmstrom, P. A. Crowell

Abstract: We have studied hyperfine interactions between spin-polarized electrons and lattice nuclei in Al_0.1Ga_0.9As/GaAs quantum well (QW) heterostructures. The spin-polarized electrons are electrically injected into the semiconductor heterostructure from a metallic ferromagnet across a Schottky tunnel barrier. The spin-polarized electron current dynamically polarizes the nuclei in the QW, and the pola… ▽ More We have studied hyperfine interactions between spin-polarized electrons and lattice nuclei in Al_0.1Ga_0.9As/GaAs quantum well (QW) heterostructures. The spin-polarized electrons are electrically injected into the semiconductor heterostructure from a metallic ferromagnet across a Schottky tunnel barrier. The spin-polarized electron current dynamically polarizes the nuclei in the QW, and the polarized nuclei in turn alter the electron spin dynamics. The steady-state electron spin is detected via the circular polarization of the emitted electroluminescence. The nuclear polarization and electron spin dynamics are accurately modeled using the formalism of optical orientation in GaAs. The nuclear spin polarization in the QW is found to depend strongly on the electron spin polarization in the QW, but only weakly on the electron density in the QW. We are able to observe nuclear magnetic resonance (NMR) at low applied magnetic fields on the order of a few hundred Oe by electrically modulating the spin injected into the QW. The electrically driven NMR demonstrates explicitly the existence of a Knight field felt by the nuclei due to the electron spin. △ Less

Submitted 5 January, 2005; originally announced January 2005.

Comments: 19 Figures - submitted to PRB

Spin injection from the Heusler alloy Co_2MnGe into Al_0.1Ga_0.9As/GaAs heterostructures

Authors: X. Y. Dong, C. Adelmann, J. Q. Xie, C. J. Palmstrom, X. Lou, J. Strand, P. A. Crowell, J. -P. Barnes, A. K. Petford-Long

Abstract: Electrical spin injection from the Heusler alloy Co_2MnGe into a p-i-n Al_0.1Ga_0.9As/GaAs light emitting diode is demonstrated. A maximum steady-state spin polarization of approximately 13% at 2 K is measured in two types of heterostructures. The injected spin polarization at 2 K is calculated to be 27% based on a calibration of the spin detector using Hanle effect measurements. Although the de… ▽ More Electrical spin injection from the Heusler alloy Co_2MnGe into a p-i-n Al_0.1Ga_0.9As/GaAs light emitting diode is demonstrated. A maximum steady-state spin polarization of approximately 13% at 2 K is measured in two types of heterostructures. The injected spin polarization at 2 K is calculated to be 27% based on a calibration of the spin detector using Hanle effect measurements. Although the dependence on electrical bias conditions is qualitatively similar to Fe-based spin injection devices of the same design, the spin polarization injected from Co_2MnGe decays more rapidly with increasing temperature. △ Less

Submitted 28 October, 2004; originally announced October 2004.

Comments: 8 pages, 4 figures

Journal ref: Appl. Phys. Lett. 86, 102107 (2005)

Spin Injection and Relaxation in Ferromagnet-Semiconductor Heterostructures

Authors: C. Adelmann, X. Lou, J. Strand, C. J. Palmstrom, P. A. Crowell

Abstract: We present a complete description of spin injection and detection in Fe/Al_xGa_{1-x}As/GaAs heterostructures for temperatures from 2 to 295 K. Measurements of the steady-state spin polarization in the semiconductor indicate three temperature regimes for spin transport and relaxation. At temperatures below 70 K, spin-polarized electrons injected into quantum well structures form excitons, and the… ▽ More We present a complete description of spin injection and detection in Fe/Al_xGa_{1-x}As/GaAs heterostructures for temperatures from 2 to 295 K. Measurements of the steady-state spin polarization in the semiconductor indicate three temperature regimes for spin transport and relaxation. At temperatures below 70 K, spin-polarized electrons injected into quantum well structures form excitons, and the spin polarization in the quantum well depends strongly on the electrical bias conditions. At intermediate temperatures, the spin polarization is determined primarily by the spin relaxation rate for free electrons in the quantum well. This process is slow relative to the excitonic spin relaxation rate at lower temperatures and is responsible for a broad maximum in the spin polarization between 100 and 200 K. The spin injection efficiency of the Fe/Al_xGa_{1-x}As Schottky barrier decreases at higher temperatures, although a steady-state spin polarization of at least 6 % is observed at 295 K. △ Less

Submitted 4 September, 2004; originally announced September 2004.

Comments: 3 Figures Submitted to Phys. Rev. Lett

Nuclear Magnetic Resonance in a Ferromagnet-Semiconductor Heterostructure

Authors: J. Strand, B. D. Schultz, A. F. Isakovic, X. Lou, C. J. Palmstrom, P. A. Crowell

Abstract: We report the observation of nuclear magnetic resonance (NMR) in a ferromagnet-semiconductor heterostructure in the presence of a spin-polarized current. Spin-polarized electrons injected from a metallic ferromagnet generate a large nuclear spin population in a GaAs quantum well by dynamic polarization. The characteristic time for the polarization process is approximately 20 sec, and the nuclear… ▽ More We report the observation of nuclear magnetic resonance (NMR) in a ferromagnet-semiconductor heterostructure in the presence of a spin-polarized current. Spin-polarized electrons injected from a metallic ferromagnet generate a large nuclear spin population in a GaAs quantum well by dynamic polarization. The characteristic time for the polarization process is approximately 20 sec, and the nuclear polarization can persist for several minutes after the current is turned off. Resonant depolarization is observed in the presence of an AC magnetic field or when the injection current is modulated at the NMR frequency. △ Less

Submitted 21 July, 2003; originally announced July 2003.

Comments: submitted to Applied Physics Letters

Dynamical Nuclear Polarization by Electrical Spin Injection in Ferromagnet-Semiconductor Heterostructures

Authors: J. Strand, B. D. Schultz, A. F. Isakovic, C. J. Palmstrom, P. A. Crowell

Abstract: Electrical spin injection from Fe into Al$_x$Ga$_{1-x}$As quantum well heterostructures is demonstrated in small (< 500 Oe) in-plane magnetic fields. The measurement is sensitive only to the component of the spin that precesses about the internal magnetic field in the semiconductor. This field is much larger than the applied field and depends strongly on the injection current density. Details of… ▽ More Electrical spin injection from Fe into Al$_x$Ga$_{1-x}$As quantum well heterostructures is demonstrated in small (< 500 Oe) in-plane magnetic fields. The measurement is sensitive only to the component of the spin that precesses about the internal magnetic field in the semiconductor. This field is much larger than the applied field and depends strongly on the injection current density. Details of the observed hysteresis in the spin injection signal are reproduced in a model that incorporates the magnetocrystalline anisotropy of the epitaxial Fe film, spin relaxation in the semiconductor, and the dynamical polarization of nuclei by the injected spins. △ Less

Submitted 19 February, 2003; originally announced February 2003.

Comments: 5 pages, 3 figures

Journal ref: J. Strand et al., Phys. Rev. Lett. 91, 036602 (2003)

Imaging of Spin Dynamics in Closure Domain and Vortex Structures

Authors: J. P. Park, P. Eames, D. M. Engebretson, J. Berezovsky, P. A. Crowell

Abstract: Time-resolved Kerr microscopy is used to study the excitations of individual micron- scale ferromagnetic thin film elements in their remnant state. Thin (18 nm) square elements with edge dimensions between 1 and 10 $μ$m form closure domain structures with 90 degree Neel walls between domains. We identify two classes of excitations in these systems. The first corresponds to precession of the magn… ▽ More Time-resolved Kerr microscopy is used to study the excitations of individual micron- scale ferromagnetic thin film elements in their remnant state. Thin (18 nm) square elements with edge dimensions between 1 and 10 $μ$m form closure domain structures with 90 degree Neel walls between domains. We identify two classes of excitations in these systems. The first corresponds to precession of the magnetization about the local demagnetizing field in each quadrant, while the second excitation is localized in the domain walls. Two modes are also identified in ferromagnetic disks with thicknesses of 60 nm and diameters from 2 $μ$m down to 500 nm. The equilibrium state of each disk is a vortex with a singularity at the center. As in the squares, the higher frequency mode is due to precession about the internal field, but in this case the lower frequency mode corresponds to gyrotropic motion of the entire vortex. These results demonstrate clearly the existence of well-defined excitations in inhomogeneously magnetized microstructures. △ Less

Submitted 28 August, 2002; originally announced August 2002.

Comments: PDF File (Figures at reduced resolution)

Spatially Resolved Dynamics of Localized Spin-Wave Modes in Ferromagnetic Wires

Authors: J. P. Park, P. Eames, D. M. Engebretson, J. Berezovsky, P. A. Crowell

Abstract: We have observed localized spin-wave modes in individual thin-film ferromagnetic wires using time-resolved Kerr microscopy as a micron-scale spectroscopic probe. The localization is due to the partial demagnetization of a wire when an external field is applied in the plane of the film and perpendicular to the long axis of the wire. Spatially-resolved spectra demonstrate the existence of distinct… ▽ More We have observed localized spin-wave modes in individual thin-film ferromagnetic wires using time-resolved Kerr microscopy as a micron-scale spectroscopic probe. The localization is due to the partial demagnetization of a wire when an external field is applied in the plane of the film and perpendicular to the long axis of the wire. Spatially-resolved spectra demonstrate the existence of distinct modes at the edges of a rectangular wire. Spectral images clearly show the crossover of the two edge modes into a single mode in low applied fields, in agreement with the results of micromagnetic simulations. △ Less

Submitted 30 June, 2002; originally announced July 2002.

Comments: 10 pages, 4 figures

Optical Pumping in Ferromagnet-Semiconductor Heterostructures: Magneto-optics and Spin Transport

Authors: A. F. Isakovic, D. M. Carr, J. Strand, B. D. Schultz, C. J. Palmstrom, P. A. Crowell

Abstract: Epitaxial ferromagnetic metal - semiconductor heterostructures are investigated using polarization-dependent electroabsorption measurements on GaAs p-type and n-type Schottky diodes with embedded In1-xGaxAs quantum wells. We have conducted studies as a function of photon energy, bias voltage, magnetic field, and excitation geometry. For optical pumping with circularly polarized light at energies… ▽ More Epitaxial ferromagnetic metal - semiconductor heterostructures are investigated using polarization-dependent electroabsorption measurements on GaAs p-type and n-type Schottky diodes with embedded In1-xGaxAs quantum wells. We have conducted studies as a function of photon energy, bias voltage, magnetic field, and excitation geometry. For optical pumping with circularly polarized light at energies above the band edge of GaAs, photocurrents with spin polarizations on the order of 1 % flow from the semiconductor to the ferromagnet under reverse bias. For optical pumping at normal incidence, this polarization may be enhanced significantly by resonant excitation at the quantum well ground-state. Measurements in a side-pumping geometry, in which the ferromagnet can be saturated in very low magnetic fields, show hysteresis that is also consistent with spin-dependent transport. Magneto-optical effects that influence these measurements are discussed. △ Less

Submitted 18 August, 2001; originally announced August 2001.

Comments: PDF, 4 figures, 1 table

Time-resolved ferromagnetic resonance in epitaxial Fe1-xCox films

Authors: D. M. Engebretson, S. Zellinger, L. C. Chen, C. J. Palmstrom, P. A. Crowell

Abstract: Magnetodynamics in epitaxial Fe1-xCox films on GaAs (100) are studied using time-resolved ferromagnetic resonance, in which the free precession of the magnetization after an impulsive excitation is measured using the polar Kerr effect. The sample is rotated with respect to the static and pulsed field directions, providing a complete mapping of the free energy surface and characteristic relaxatio… ▽ More Magnetodynamics in epitaxial Fe1-xCox films on GaAs (100) are studied using time-resolved ferromagnetic resonance, in which the free precession of the magnetization after an impulsive excitation is measured using the polar Kerr effect. The sample is rotated with respect to the static and pulsed field directions, providing a complete mapping of the free energy surface and characteristic relaxation times. The magnetic response can be simulated with a simple coherent rotation model except in the immediate vicinity of switching fields. Bulk and surface anisotropies are identified, and unusual dynamics associated with the coexistence of cubic and uniaxial anisotropies are observed. △ Less

Submitted 26 May, 2001; originally announced May 2001.

Comments: PDF - 4 figures

Onset of Superfluidity in 4He Films Adsorbed on Disordered Substrates

Authors: P. A. Crowell, F. W. Van Keuls, J. D. Reppy

Abstract: We have studied 4He films adsorbed in two porous glasses, aerogel and Vycor, using high precision torsional oscillator and DC calorimetry techniques. Our investigation focused on the onset of superfluidity at low temperatures as the 4He coverage is increased. Torsional oscillator measurements of the 4He-aerogel system were used to determine the superfluid density of films with transition tempera… ▽ More We have studied 4He films adsorbed in two porous glasses, aerogel and Vycor, using high precision torsional oscillator and DC calorimetry techniques. Our investigation focused on the onset of superfluidity at low temperatures as the 4He coverage is increased. Torsional oscillator measurements of the 4He-aerogel system were used to determine the superfluid density of films with transition temperatures as low as 20 mK. Heat capacity measurements of the 4He-Vycor system probed the excitation spectrum of both non-superfluid and superfluid films for temperatures down to 10 mK. Both sets of measurements suggest that the critical coverage for the onset of superfluidity corresponds to a mobility edge in the chemical potential, so that the onset transition is the bosonic analog of a superconductor-insulator transition. The superfluid density measurements, however, are not in agreement with the scaling theory of an onset transition from a gapless, Bose glass phase to a superfluid. The heat capacity measurements show that the non-superfluid phase is better characterized as an insulator with a gap. △ Less

Submitted 14 December, 1996; originally announced December 1996.

Comments: 15 pages (RevTex), 21 figures (postscript)

Report number: MSC Report No. 8151

The Bose--Hubbard Model and Superfluid Staircases in $^{4}$He Films

Authors: G. T. Zimanyi, P. A. Crowell, R. T. Scalettar, G. G. Batrouni

Abstract: The recent experimental observation of step-like structure in the superfluid density of $^{4}$He films on graphite is interpreted in terms of passage close to Mott insulating lobes in the Bose--Hubbard model. Plateaus develop in the superfluid density near the completion of each layer because of the He-He repulsion. We modify the Bose--Hubbard Hamiltonian, using a density-dependent He-He interac… ▽ More The recent experimental observation of step-like structure in the superfluid density of $^{4}$He films on graphite is interpreted in terms of passage close to Mott insulating lobes in the Bose--Hubbard model. Plateaus develop in the superfluid density near the completion of each layer because of the He-He repulsion. We modify the Bose--Hubbard Hamiltonian, using a density-dependent He-He interaction term to model the He-substrate potential. Quantum Monte Carlo simulations yield results which agree well with the experimental data. △ Less

Submitted 25 October, 1993; originally announced October 1993.

Comments: 11 pages+3 figures upon request, Revtex 3.0, UCD 93-112