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Towards achieving strong coupling in 3D-cavity with solid state spin resonance
Authors:
J-M. Le Floch,
N. Delhote,
M. Aubourg,
V. Madrangeas,
D. Cros,
S. Castelletto,
M. E. Tobar
Abstract:
We investigate the microwave magnetic field confinement in several microwave 3D-cavities, using 3D finite-element analysis to determine the best design and achieve strong coupling between microwave resonant cavity photons and solid state spins. Specifically, we design cavities for achieving strong coupling of electromagnetic modes with an ensemble of nitrogen vacancy (NV) defects in diamond. We re…
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We investigate the microwave magnetic field confinement in several microwave 3D-cavities, using 3D finite-element analysis to determine the best design and achieve strong coupling between microwave resonant cavity photons and solid state spins. Specifically, we design cavities for achieving strong coupling of electromagnetic modes with an ensemble of nitrogen vacancy (NV) defects in diamond. We report here a novel and practical cavity design with a magnetic filling factor of up to 4 times (2 times higher collective coupling) than previously achieved using 1D superconducting cavities with small mode volume. In addition, we show that by using a double-split resonator cavity, it is possible to achieve up to 200 times better cooperative factor than the currently demonstrated with NV in diamond. These designs open up further opportunities for studying strong and ultra-strong coupling effects on spins in solids using alternative systems with a wider range of design parameters.
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Submitted 6 April, 2016;
originally announced April 2016.
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Electromagnetic properties of polycrystalline diamond from 35K to room temperature and microwave to terahertz frequencies
Authors:
Jean-Michel Le Floch,
Romain Bara,
John G. Hartnett,
Michael E. Tobar,
David Mouneyrac,
Damien Passerieux,
Dominique Cros,
Jerzy Krupka,
Philippe Goy,
Sylvain Caroopen
Abstract:
Dielectric resonators are key components for many microwave and millimetre wave applications, including high-Q filters and frequency-determining elements for precision frequency synthesis. These often depend on the quality of the dielectric material. The commonly used material for building the best cryogenic microwave oscillators is sapphire. However sapphire is becoming a limiting factor for high…
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Dielectric resonators are key components for many microwave and millimetre wave applications, including high-Q filters and frequency-determining elements for precision frequency synthesis. These often depend on the quality of the dielectric material. The commonly used material for building the best cryogenic microwave oscillators is sapphire. However sapphire is becoming a limiting factor for higher frequencies design. It is then important to find new candidates that can fulfil the requirements for millimetre wave low noise oscillators at room and cryogenic temperatures. These clocks are used as a reference in many fields, like modern telecommunication systems, radio astronomy (VLBI), and precision measurements at the quantum limit. High-resolution measurements were made of the temperature-dependence of the electromagnetic properties of a polycrystalline diamond disk at temperatures between 35 K and 330 K at microwave to sub-millimetre wave frequencies. The cryogenic measurements were made using a TE01δ dielectric mode resonator placed inside a vacuum chamber connected to a single-stage pulse-tube cryocooler. The high frequency characterization was performed at room temperature using a combination of a quasi-optical two-lens transmission setup, a Fabry-Perot cavity and a whispering gallery mode resonator excited with waveguides. Our CVD diamond sample exhibits a decreasing loss tangent with increasing frequencies. We compare the results with well known crystals. This comparison makes clear that polycrystalline diamond could be an important material to generate stable frequencies at millimetre waves.
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Submitted 17 February, 2013;
originally announced February 2013.
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Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs and 4H-SiC semiconductors under light illumination at cryogenic temperatures
Authors:
David Mouneyrac,
John G. Hartnett,
Jean-Michel Le Floch,
Michael E. Tobar,
Dominique Cros,
Jerzy Krupka
Abstract:
We report on extremely sensitive measurements of changes in the microwave properties of high purity non-intentionally-doped single-crystal semiconductor samples of gallium phosphide, gallium arsenide and 4H-silicon carbide when illuminated with light of different wavelengths at cryogenic temperatures. Whispering gallery modes were excited in the semiconductors whilst they were cooled on the coldfi…
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We report on extremely sensitive measurements of changes in the microwave properties of high purity non-intentionally-doped single-crystal semiconductor samples of gallium phosphide, gallium arsenide and 4H-silicon carbide when illuminated with light of different wavelengths at cryogenic temperatures. Whispering gallery modes were excited in the semiconductors whilst they were cooled on the coldfinger of a single-stage cryocooler and their frequencies and Q-factors measured under light and dark conditions. With these materials, the whispering gallery mode technique is able to resolve changes of a few parts per million in the permittivity and the microwave losses as compared with those measured in darkness. A phenomenological model is proposed to explain the observed changes, which result not from direct valence to conduction band transitions but from detrapping and retrapping of carriers from impurity/defect sites with ionization energies that lay in the semiconductor band gap. Detrapping and retrapping relaxation times have been evaluated from comparison with measured data.
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Submitted 8 October, 2010;
originally announced October 2010.
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Observation of persistent photoconductivity in bulk Gallium Arsenide and Gallium Phosphide samples at cryogenic temperatures using the Whispering Gallery mode method
Authors:
J. G. Hartnett,
D. Mouneyrac,
J. -M. Le Floch,
J. Krupka,
M. E. Tobar,
D. Cros
Abstract:
Whispering Gallery modes in bulk cylindrical Gallium Arsenide and Gallium Phosphide samples have been examined both in darkness and under white light at cryogenics temperatures < 50 K. In both cases persistent photoconductivity was observed after initially exposing semiconductors to white light from a halogen lamp. Photoconductance decay time constants for GaP and GaAs were determined to be 0.90…
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Whispering Gallery modes in bulk cylindrical Gallium Arsenide and Gallium Phosphide samples have been examined both in darkness and under white light at cryogenics temperatures < 50 K. In both cases persistent photoconductivity was observed after initially exposing semiconductors to white light from a halogen lamp. Photoconductance decay time constants for GaP and GaAs were determined to be 0.900 +/- 0.081 ns and 1.098 +/- 0.063 ns, respectively, using this method.
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Submitted 12 June, 2009;
originally announced June 2009.
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Modified permittivity observed in bulk Gallium Arsenide and Gallium Phosphide samples at 50 K using the Whispering Gallery mode method
Authors:
J. G. Hartnett,
D. Mouneyrac,
J-M. Le Floch,
J. Krupka,
Michael E. Tobar,
D. Cros
Abstract:
Whispering Gallery modes in bulk cylindrical Gallium Arsenide and Gallium Phosphide samples have been examined both in darkness and under white light at 50 K. In both samples we observed change in permittivity under light and dark conditions. This results from a change in the polarization state of the semiconductor, which is consistent with a free electron-hole creation/recombination process. Th…
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Whispering Gallery modes in bulk cylindrical Gallium Arsenide and Gallium Phosphide samples have been examined both in darkness and under white light at 50 K. In both samples we observed change in permittivity under light and dark conditions. This results from a change in the polarization state of the semiconductor, which is consistent with a free electron-hole creation/recombination process. The permittivity of the semiconductor is modified by free photocarriers in the surface layers of the sample which is the region sampled by Whispering Gallery modes.
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Submitted 10 June, 2009;
originally announced June 2009.
