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No time for surface charge: how bulk conductivity hides charge patterns from KPFM in contact-electrified surfaces
Authors:
Felix Pertl,
Isaac C. D. Lenton,
Tobias Cramer,
Scott Waitukaitis
Abstract:
Kelvin probe force microscopy (KPFM) is a powerful tool for studying contact electrification, using an tiny tip to image voltages caused by transferred charge. It has been used in stationary studies focused on finding patterns (e.g. heterogeneity) in transferred charge, but also in dynamic studies aimed at understanding how charge escapes. Here, we show that the charge dynamics in all but the very…
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Kelvin probe force microscopy (KPFM) is a powerful tool for studying contact electrification, using an tiny tip to image voltages caused by transferred charge. It has been used in stationary studies focused on finding patterns (e.g. heterogeneity) in transferred charge, but also in dynamic studies aimed at understanding how charge escapes. Here, we show that the charge dynamics in all but the very best insulators are too fast for patterns found in stationary studies to be meaningful. Using a custom-built system, we are able to quickly (~30 s) transfer samples from our contact-charging apparatus to the atomic force microscopy (AFM). For materials at the lower end of `good insulators', we see potential decay that is shorter than the timescale of a typical KPFM scan (~10 minutes). We develop a minimal model to explain this decay based on bulk conductivity, and show that the measured timescale increases with the prediction from this model. To rule out surface conductivity, we perform additional experiments with the macroscopic method of scanning Kelvin probe microscopy. Our results highlight an important but widely overlooked consideration for dynamic vs. stationary studies in contact-electrified surfaces, and suggest that some patterns observed in the latter, e.g. charge heterogeneity, are not as widespread as previously thought.
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Submitted 18 February, 2025;
originally announced February 2025.
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How to Achieve High Spatial Resolution in Organic Optobioelectronic Devices?
Authors:
Luca Fabbri,
Ludovico Migliaccio,
Aleksandra Širvinskytė,
Giacomo Rizzi,
Luca Bondi,
Cristiano Tamarozzi,
Stefan A. L. Weber,
Beatrice Fraboni,
Eric Daniel Glowacki,
Tobias Cramer
Abstract:
Light activated local stimulation and sensing of biological cells offers enormous potential for minimally invasive bioelectronic interfaces. Organic semiconductors are a promising material class to achieve this kind of transduction due to their optoelectronic properties and biocompatibility. Here we investigate which material properties are necessary to keep the optical excitation localized. This…
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Light activated local stimulation and sensing of biological cells offers enormous potential for minimally invasive bioelectronic interfaces. Organic semiconductors are a promising material class to achieve this kind of transduction due to their optoelectronic properties and biocompatibility. Here we investigate which material properties are necessary to keep the optical excitation localized. This is critical to single cell transduction with high spatial resolution. As a model system we use organic photocapacitors for cell stimulation made of the small molecule semiconductors H2Pc and PTCDI. We investigate the spatial broadening of the localized optical excitation with photovoltage microscopy measurements. Our experimental data combined with modelling show that resolution losses due to the broadening of the excitation are directly related to the effective diffusion length of charge carriers generated at the heterojunction. With additional transient photovoltage measurements we find that the H2Pc/PTCDI heterojunction offers a small diffusion length of lambda = 1.5 +/- 0.1 um due to the small mobility of charge carriers along the heterojunction. Instead covering the heterojunction with a layer of PEDOT:PSS improves the photocapacitor performance but increases the carrier diffusion length to lambda = 7.0 +/- 0.3 um due to longer lifetime and higher carrier mobility. Furthermore, we introduce electrochemical photocurrent microscopy experiments to demonstrate micrometric resolution with the pn-junction under realistic aqueous operation conditions. This work offers valuable insights into the physical mechanisms governing the excitation and transduction profile and provide design principles for future organic semiconductor junctions, aiming to achieve high efficiency and high spatial resolution.
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Submitted 26 June, 2024;
originally announced June 2024.
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Accurate determination of band tail properties in amorphous semiconductor thin film with Kelvin Probe Force Microscopy
Authors:
Luca Fabbri,
Camilla Bordoni,
Pedro Barquinha,
Jerome Crocco,
Beatrice Fraboni,
Tobias Cramer
Abstract:
Amorphous oxide semiconductors are receiving significant attention due to their relevance for large area electronics. Their disordered microscopic structure causes the formation of band tails in the density of states (DOS) that strongly affect charge transport properties. Bandtail properties are crucial to understand for optimizing thin film device performance. Among the available techniques to me…
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Amorphous oxide semiconductors are receiving significant attention due to their relevance for large area electronics. Their disordered microscopic structure causes the formation of band tails in the density of states (DOS) that strongly affect charge transport properties. Bandtail properties are crucial to understand for optimizing thin film device performance. Among the available techniques to measure the DOS, KPFM is exceptional as it enables precise local electronic investigations combined with microscopic imaging. However, a model to interpret KPFM spectroscopy data on amorphous semiconductors of finite thickness is lacking. To address this issue, we provide an analytical solution to the Poisson's equation for a metal-insulator-semiconductor (MIS) junction interacting with the AFM tip. The solution enables us to fit experimental data for semiconductors with finite thickness and obtain the DOS parameters, such as band tail width (E_t), doping density (N_D), and flat band potential. To demonstrate our method, we perform KPFM experiments on Indium-Gallium-Zinc Oxide (IGZO) thin film transistors (IGZO-TFTs). DOS parameters compare well to values obtained with photocurrent spectroscopy. We demonstrate the potentials of the developed method by investigating the impact of ionizing radiation on DOS parameters and TFT performance. Our results provide clear evidence that the observed shift in threshold voltage is caused by static charge in the gate dielectric leading to a shift in flat band potential. Band-tails and doping density are not affected by the radiation. The developed methodology can be easily translated to different semiconductor materials and paves the way towards quantitative microscopic mapping of local DOS parameters in thin film devices.
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Submitted 15 March, 2023;
originally announced March 2023.
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Quantifying nanoscale charge density features of contact-charged surfaces with an FEM/KPFM-hybrid approach
Authors:
Felix Pertl,
Juan Carlos Sobarzo,
Lubuna Shafeek,
Tobias Cramer,
Scott Waitukaitis
Abstract:
Kelvin probe force microscopy (KPFM) is a powerful tool for studying contact electrification at the nanoscale, but converting KPFM voltage maps to charge density maps is non-trivial due to long-range forces and complex system geometry. Here we present a strategy using finite element method (FEM) simulations to determine the Green's function of the KPFM probe/insulator/ground system, which allows u…
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Kelvin probe force microscopy (KPFM) is a powerful tool for studying contact electrification at the nanoscale, but converting KPFM voltage maps to charge density maps is non-trivial due to long-range forces and complex system geometry. Here we present a strategy using finite element method (FEM) simulations to determine the Green's function of the KPFM probe/insulator/ground system, which allows us to quantitatively extract surface charge. Testing our approach with synthetic data, we find that accounting for the AFM tip, cone and cantilever are necessary to recover a known input, and that commonly applied heuristics and approximations lead to gross miscalculation. Applying it to experimental data, we demonstrate its capacity to extract realistic surface charge densities and fine details from contact charged surfaces. Our method gives a straightforward recipe to convert qualitative KPFM voltage data into quantitative charge data over a range of experimental conditions, enabling quantitative contact electrification experiments at the nanoscale.
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Submitted 29 November, 2022; v1 submitted 5 September, 2022;
originally announced September 2022.
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In-situ force microscopy to investigate fracture in stretchable electronics: insights on local surface mechanics and conductivity
Authors:
Giorgio Cortelli,
Luca Patruno,
Tobias Cramer,
Beatrice Fraboni,
Stefano de Miranda
Abstract:
Stretchable conductors are of crucial relevance for emerging technologies such as wearable electronics, low-invasive bioelectronic implants or soft actuators for robotics. A critical issue for their development regards the understanding of defect formation and fracture of conducting pathways during stress-strain cycles. Here we present a novel atomic force microscopy (AFM) method that provides mul…
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Stretchable conductors are of crucial relevance for emerging technologies such as wearable electronics, low-invasive bioelectronic implants or soft actuators for robotics. A critical issue for their development regards the understanding of defect formation and fracture of conducting pathways during stress-strain cycles. Here we present a novel atomic force microscopy (AFM) method that provides multichannel images of surface morphology, conductivity, and elastic modulus during sample deformation. To develop the method, we investigate in detail the mechanical interactions between the AFM tip and a stretched, free-standing thin film sample. Our findings reveal the conditions to avoid artifacts related to sample bending modes or resonant excitations. As an example, we analyze strain effects in thin gold films deposited on a soft silicone substrate. Our technique allows to observe the details of microcrack opening during tensile strain and their impact on local current transport and surface mechanics. We find that although the film fractures into separate fragments, at higher strain a current transport is sustained by a tunneling mechanism. The microscopic observation of local defect formation and their correlation to local conductivity will provide novel insight to design more robust and fatigue resistant stretchable conductors.
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Submitted 21 February, 2022;
originally announced February 2022.
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Electrolyte-gated organic synapse transistor interfaced with neurons
Authors:
Simon Desbief,
Michele di Lauro,
Stefano Casalini,
David Guerin,
Silvia Tortorella,
Marianna Barbalinardo,
Adrica Kyndiah,
Mauro Murgia,
Tobias Cramer,
Fabio Biscarini,
Dominique Vuillaume
Abstract:
We demonstrate an electrolyte-gated hybrid nanoparticle/organic synapstor (synapse-transistor, termed EGOS) that exhibits short-term plasticity as biological synapses. The response of EGOS makes it suitable to be interfaced with neurons: short-term plasticity is observed at spike voltage as low as 50 mV (in a par with the amplitude of action potential in neurons) and with a typical response time i…
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We demonstrate an electrolyte-gated hybrid nanoparticle/organic synapstor (synapse-transistor, termed EGOS) that exhibits short-term plasticity as biological synapses. The response of EGOS makes it suitable to be interfaced with neurons: short-term plasticity is observed at spike voltage as low as 50 mV (in a par with the amplitude of action potential in neurons) and with a typical response time in the range of tens milliseconds. Human neuroblastoma stem cells are adhered and differentiated into neurons on top of EGOS. We observe that the presence of the cells does not alter short-term plasticity of the device.
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Submitted 3 August, 2016;
originally announced August 2016.
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Low voltage and time constant organic synapse-transistor
Authors:
Simon Desbief,
Adrica Kyndiah,
David Guerin,
Denis Gentili,
Mauro Murgia,
Stéphane Lenfant,
Fabien Alibart,
Tobias Cramer,
Fabio Biscarini,
Dominique Vuillaume
Abstract:
We report on an artificial synapse, an organic synapse-transistor (synapstor) working at 1 volt and with a typical response time in the range 100-200 ms. This device (also called NOMFET, Nanoparticle Organic Memory Field Effect Transistor) combines a memory and a transistor effect in a single device. We demonstrate that short-term plasticity (STP), a typical synaptic behavior, is observed when sti…
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We report on an artificial synapse, an organic synapse-transistor (synapstor) working at 1 volt and with a typical response time in the range 100-200 ms. This device (also called NOMFET, Nanoparticle Organic Memory Field Effect Transistor) combines a memory and a transistor effect in a single device. We demonstrate that short-term plasticity (STP), a typical synaptic behavior, is observed when stimulating the device with input spikes of 1 volt. Both significant facilitating and depressing behaviors of this artificial synapse are observed with a relative amplitude of about 50% and a dynamic response < 200 ms. From a series of in-situ experiments, i.e. measuring the current-voltage characteristic curves in-situ and in real time, during the growth of the pentacene over a network of gold nanoparticles, we elucidate these results by analyzing the relationship between the organic film morphology and the transport properties. This synapstor works at a low energy of about 2 nJ/spike. We discuss the implications of these results for the development of neuro-inspired computing architectures and interfacing with biological neurons.
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Submitted 16 May, 2015;
originally announced May 2015.