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Random strain fluctuations as dominant disorder source for high-quality on-substrate graphene devices
Authors:
Nuno J. G. Couto,
Davide Costanzo,
Stephan Engels,
Dong-Keun Ki,
Kenji Watanabe,
Takashi Taniguchi,
Christoph Stampfer,
Francisco Guinea,
Alberto F. Morpurgo
Abstract:
We have performed systematic investigations of transport through graphene on hexagonal boron nitride (hBN) substrates, together with confocal Raman measurements and a targeted theoretical analysis, to identify the dominant source of disorder in this system. Low-temperature transport measurements on many devices reveal a clear correlation between the carrier mobility $μ$ and the width $n^*$ of the…
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We have performed systematic investigations of transport through graphene on hexagonal boron nitride (hBN) substrates, together with confocal Raman measurements and a targeted theoretical analysis, to identify the dominant source of disorder in this system. Low-temperature transport measurements on many devices reveal a clear correlation between the carrier mobility $μ$ and the width $n^*$ of the resistance peak around charge neutrality, demonstrating that charge scattering and density inhomogeneities originate from the same microscopic mechanism. The study of weak-localization unambiguously shows that this mechanism is associated to a long-ranged disorder potential, and provides clear indications that random pseudo-magnetic fields due to strain are the dominant scattering source. Spatially resolved Raman spectroscopy measurements confirm the role of local strain fluctuations, since the line-width of the Raman 2D-peak --containing information of local strain fluctuations present in graphene-- correlates with the value of maximum observed mobility. The importance of strain is corroborated by a theoretical analysis of the relation between $μ$ and $n^*$ that shows how local strain fluctuations reproduce the experimental data at a quantitative level, with $n^*$ being determined by the scalar deformation potential and $μ$ by the random pseudo-magnetic field (consistently with the conclusion drawn from the analysis of weak-localization). Throughout our study, we compare the behavior of devices on hBN substrates to that of devices on SiO$_2$ and SrTiO$_3$, and find that all conclusions drawn for the case of hBN are compatible with the observations made on these other materials. These observations suggest that random strain fluctuations are the dominant source of disorder for high-quality graphene on many different substrates, and not only on hexagonal boron nitride.
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Submitted 14 September, 2014; v1 submitted 21 January, 2014;
originally announced January 2014.
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In-plane electronic confinement in superconducting LaAlO$_3$/SrTiO$_3$ nanostructures
Authors:
D. Stornaiuolo,
S. Gariglio,
N. J. G. Couto,
A. Fete,
A. D. Caviglia,
G. Seyfarth,
D. Jaccard,
A. F. Morpurgo,
J. -M. Triscone
Abstract:
We describe the transport properties of mesoscopic devices based on the two dimensional electron gas (2DEG) present at the LaAlO$_3$/SrTiO$_3$ interface. Bridges with lateral dimensions down to 500~nm were realized using electron beam lithography. Their detailed characterization shows that processing and confinement do not alter the transport parameters of the 2DEG. The devices exhibit superconduc…
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We describe the transport properties of mesoscopic devices based on the two dimensional electron gas (2DEG) present at the LaAlO$_3$/SrTiO$_3$ interface. Bridges with lateral dimensions down to 500~nm were realized using electron beam lithography. Their detailed characterization shows that processing and confinement do not alter the transport parameters of the 2DEG. The devices exhibit superconducting behavior tunable by electric field effect. In the normal state, we measured universal conductance fluctuations, signature of phase-coherent transport in small structures. The achievement of reliable lateral confinement of the 2DEG opens the way to the realization of quantum electronic devices at the LaAlO$_3$/SrTiO$_3$ interface.
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Submitted 6 June, 2013;
originally announced June 2013.
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Transport through graphene on SrTiO3
Authors:
N. J. G. Couto,
B. Sacepe,
A. F. Morpurgo
Abstract:
We report transport measurements through graphene on SrTiO3 substrates as a function of magnetic field B, carrier density n, and temperature T. The large dielectric constant of SrTiO3 screens very effectively long-range electron-electron interactions and potential fluctuations, making Dirac electrons in graphene virtually non-interacting. The absence of interactions results in a unexpected behavio…
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We report transport measurements through graphene on SrTiO3 substrates as a function of magnetic field B, carrier density n, and temperature T. The large dielectric constant of SrTiO3 screens very effectively long-range electron-electron interactions and potential fluctuations, making Dirac electrons in graphene virtually non-interacting. The absence of interactions results in a unexpected behavior of the longitudinal resistance in the N=0 Landau level, and in a large suppression of the transport gap in nano-ribbons. The "bulk" transport properties of graphene at B=0T, on the contrary, are completely unaffected by the substrate dielectric constant.
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Submitted 16 July, 2011;
originally announced July 2011.
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Gate-tuned normal and superconducting transport at the surface of a topological insulator
Authors:
B. Sacepe,
J. B. Oostinga,
J. Li,
A. Ubaldini,
N. J. G. Couto,
E. Giannini,
A. F. Morpurgo
Abstract:
Three-dimensional topological insulators are characterized by the presence of a bandgap in their bulk and gapless Dirac fermions at their surfaces. New physical phenomena originating from the presence of the Dirac fermions are predicted to occur, and to be experimentally accessible via transport measurements in suitably designed electronic devices. Here we study transport through superconducting j…
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Three-dimensional topological insulators are characterized by the presence of a bandgap in their bulk and gapless Dirac fermions at their surfaces. New physical phenomena originating from the presence of the Dirac fermions are predicted to occur, and to be experimentally accessible via transport measurements in suitably designed electronic devices. Here we study transport through superconducting junctions fabricated on thin Bi2Se3 single crystals, equipped with a gate electrode. In the presence of perpendicular magnetic field B, sweeping the gate voltage enables us to observe the filling of the Dirac fermion Landau levels, whose character evolves continuously from electron- to hole-like. When B=0, a supercurrent appears, whose magnitude can be gate tuned, and is minimum at the charge neutrality point determined from the Landau level filling. Our results demonstrate how gated nano-electronic devices give control over normal and superconducting transport of Dirac fermions at an individual surface of a three-dimensional topological insulator.
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Submitted 9 December, 2011; v1 submitted 12 January, 2011;
originally announced January 2011.
