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Energy gap tuning and gate-controlled topological phase transition in InAs/In$_{x}$Ga$_{1-x}$Sb composite quantum wells
Authors:
H. Irie,
T. Akiho,
F. Couëdo,
K. Suzuki,
K. Onomitsu,
K. Muraki
Abstract:
We report transport measurements of strained InAs/In$_{x}$Ga$_{1-x}$Sb composite quantum wells (CQWs) in the quantum spin Hall phase, focusing on the control of the energy gap through structural parameters and an external electric field. For highly strained CQWs with $x = 0.4$, we obtain a gap of 35 meV, an order of magnitude larger than that reported for binary InAs/GaSb CQWs. Using a dual-gate c…
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We report transport measurements of strained InAs/In$_{x}$Ga$_{1-x}$Sb composite quantum wells (CQWs) in the quantum spin Hall phase, focusing on the control of the energy gap through structural parameters and an external electric field. For highly strained CQWs with $x = 0.4$, we obtain a gap of 35 meV, an order of magnitude larger than that reported for binary InAs/GaSb CQWs. Using a dual-gate configuration, we demonstrate an electrical-field-driven topological phase transition, which manifests itself as a re-entrant behavior of the energy gap. The sizeable energy gap and high bulk resistivity obtained in both the topological and normal phases of a single device open the possibility of electrical switching of the edge transport.
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Submitted 3 August, 2020;
originally announced August 2020.
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Impact of epitaxial strain on the topological-nontopological phase diagram and semimetallic behavior of InAs/GaSb composite quantum wells
Authors:
H. Irie,
T. Akiho,
F. Couëdo,
R. Ohana,
K. Suzuki,
K. Onomitsu,
K. Muraki
Abstract:
We study the influence of epitaxial strain on the electronic properties of InAs/GaSb composite quantum wells (CQWs), host structures for quantum spin Hall insulators, by transport measurements and eight-band $\mathbf{k\cdot p}$ calculations. Using different substrates and buffer layer structures for crystal growth, we prepare two types of samples with vastly different strain conditions. CQWs with…
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We study the influence of epitaxial strain on the electronic properties of InAs/GaSb composite quantum wells (CQWs), host structures for quantum spin Hall insulators, by transport measurements and eight-band $\mathbf{k\cdot p}$ calculations. Using different substrates and buffer layer structures for crystal growth, we prepare two types of samples with vastly different strain conditions. CQWs with a nearly strain-free GaSb layer exhibit a resistance peak at the charge neutrality point that reflects the opening of a topological gap in the band-inverted regime. In contrast, for CQWs with 0.50\% biaxial tensile strain in the GaSb layer, semimetallic behavior indicating a gap closure is found for the same degree of band inversion. Additionally, with the tensile strain, the boundary between the topological and nontopological regimes is located at a larger InAs thickness. Eight-band $\mathbf{k\cdot p}$ calculations reveal that tensile strain in GaSb not only shifts the phase boundary but also significantly modifies the band structure, which can result in the closure of an indirect gap and make the system semimetallic even in the topological regime. Our results thus provide a global picture of the topological-nontopological phase diagram as a function of layer thicknesses and strain.
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Submitted 27 February, 2020;
originally announced February 2020.
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Dynamic properties of high-Tc superconducting nano-junctions made with a focused helium ion beam
Authors:
François Couëdo,
Paul Amari,
Cheryl Feuillet-Palma,
Christian Ulysse,
Yogesh Kumar Srivastava,
Ranjan Singh,
Nicolas Bergeal,
Jérôme Lesueur
Abstract:
The Josephson junction (JJ) is the corner stone of superconducting electronics and quantum information processing. While the technology for fabricating low $T_{c}$ JJ is mature and delivers quantum circuits able to reach the "quantum supremacy", the fabrication of reproducible and low-noise high-$T_{c}$ JJ is still a challenge to be taken up. Here we report on noise properties at RF frequencies of…
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The Josephson junction (JJ) is the corner stone of superconducting electronics and quantum information processing. While the technology for fabricating low $T_{c}$ JJ is mature and delivers quantum circuits able to reach the "quantum supremacy", the fabrication of reproducible and low-noise high-$T_{c}$ JJ is still a challenge to be taken up. Here we report on noise properties at RF frequencies of recently introduced high-$T_{c}$ Josephson nano-junctions fabricated by mean of a Helium ion beam focused at sub-nanometer scale on a $\mathrm{YBa}_2\mathrm{Cu}_3\mathrm{O}_7$ thin film. We show that their current-voltage characteristics follow the standard Resistively-Shunted-Junction (RSJ) circuit model, and that their characteristic frequency $f_{c}=(2e/h)I_{c}R_{n}$ reaches $\sim 300$ GHz at low temperature. Using the "detector response" method, we evidence that the Josephson oscillation linewidth is only limited by the thermal noise in the RSJ model for temperature ranging from $T\sim 20$ K to $75$ K. At lower temperature and for the highest He irradiation dose, the shot noise contribution must also be taken into account when approaching the tunneling regime. We conclude that these Josephson nano-junctions present the lowest noise level possible, which makes them very promising for future applications in the microwave and terahertz regimes.
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Submitted 24 June, 2020; v1 submitted 29 August, 2019;
originally announced August 2019.
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Pseudospin Berry phase as a signature of nontrivial band topology in a two-dimensional system
Authors:
F. Couëdo,
H. Irie,
T. Akiho,
K. Suzuki,
K. Onomitsu,
K. Muraki
Abstract:
Electron motion in crystals is governed by the coupling between crystal momentum and internal degrees of freedom such as spin implicit in the band structure. The description of this coupling in terms of a momentum-dependent effective field and the resultant Berry phase has greatly advanced our understanding of diverse phenomena including various Hall effects and has lead to the discovery of new st…
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Electron motion in crystals is governed by the coupling between crystal momentum and internal degrees of freedom such as spin implicit in the band structure. The description of this coupling in terms of a momentum-dependent effective field and the resultant Berry phase has greatly advanced our understanding of diverse phenomena including various Hall effects and has lead to the discovery of new states of matter exemplified by topological insulators. While experimental studies on topological systems have focused on the gapless states that emerge at the surfaces or edges, the underlying nontrivial topology in the bulk has not been manifested. Here we report the observation of Berry's phase in magneto-oscillations and quantum Hall effects of a coupled electron-hole system hosted in quantum wells with inverted bands. In contrast to massless Dirac fermions in graphene, for which the Berry phase $Γ$ is quantized at $π$, we observe that $Γ$ varies with the Fermi level $E_\mathrm{F}$, passing through $π$ as $E_\mathrm{F}$ traverses the energy gap that opens due to electron-hole hybridization. We show that the evolution of $Γ$ is a manifestation of the pseudospin texture that encodes the momentum-dependent electron-hole coupling and is therefore a bulk signature of the nontrivial band topology.
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Submitted 23 December, 2019; v1 submitted 14 February, 2019;
originally announced February 2019.
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High-Tc superconducting detector for highly-sensitive microwave magnetometry
Authors:
François Couëdo,
Eliana Recoba Pawlowski,
Julien Kermorvant,
Juan Trastoy,
Denis Crété,
Yves Lemaître,
Bruno Marcilhac,
Christian Ulysse,
Cheryl Feuillet-Palma,
Nicolas Bergeal,
Jérome Lesueur
Abstract:
We have fabricated arrays of High-T$_c$ Superconducting Quantum Interference Devices (SQUIDs) with randomly distributed loop sizes as sensitive antennas for Radio-Frequency (RF) waves. These sub-wavelength size devices known as Superconducting Quantum Interference Filters (SQIFs) detect the magnetic component of the electromagnetic field. We use a scalable ion irradiation technique to pattern the…
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We have fabricated arrays of High-T$_c$ Superconducting Quantum Interference Devices (SQUIDs) with randomly distributed loop sizes as sensitive antennas for Radio-Frequency (RF) waves. These sub-wavelength size devices known as Superconducting Quantum Interference Filters (SQIFs) detect the magnetic component of the electromagnetic field. We use a scalable ion irradiation technique to pattern the circuits and engineer the Josephson junctions needed to make SQUIDs. Here we report on a 300 SQUIDs series array with loops area ranging from $6$ to $60\ μm^{2}$, folded in a meander line covering a $3.5\ mm\times 8\ mm$ substrate area, made out of a $150$-nm-thick $\mathrm{YBa}_2\mathrm{Cu}_3\mathrm{O}_7$ film. Operating at a temperature $T=66\ K$ in a un-shielded magnetic environment, under low DC bias current ($I=60\ μA$) and DC magnetic field ($B=3\ μT$), this SQIF can detect a magnetic field of a few $pT$ at a frequency of $1.125\ GHz$, which corresponds to a sensitivity of a few hundreds of $fT/\sqrt{Hz}$, and shows linear response over 7 decades in RF power. This work is a promising approach for the realization of low dissipative sub-wavelength GHz magnetometers.
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Submitted 20 May, 2019; v1 submitted 25 January, 2019;
originally announced January 2019.
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Single-band to two-band superconductivity transition in two-dimensional oxide interfaces
Authors:
G. Singh,
A. Jouan,
G. Herranz,
M. Scigaj,
F. Sanchez,
L. Benfatto,
S. Caprara,
M. Grilli,
G. Saiz,
F. Couedo,
C. Feuillet-Palma,
J. Lesueur,
N. Bergeal
Abstract:
In multiorbital materials, superconductivity can exhibit new exotic forms that include several coupled condensates. In this context, quantum confinement in two-dimensional superconducting oxide interfaces offers new degrees of freedom to engineer the band structure and selectively control 3d-orbitals occupancy by electrostatic doping. However, the presence of multiple superconducting condensates i…
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In multiorbital materials, superconductivity can exhibit new exotic forms that include several coupled condensates. In this context, quantum confinement in two-dimensional superconducting oxide interfaces offers new degrees of freedom to engineer the band structure and selectively control 3d-orbitals occupancy by electrostatic doping. However, the presence of multiple superconducting condensates in these systems has not yet been demonstrated. Here, we use resonant microwave transport to extract the superfluid stiffness of the (110)-oriented LaAlO3/SrTiO3 interface in the entire phase diagram. We evidence a transition from single-band to two-band superconductivity driven by electrostatic doping, which we relate to the filling of the different 3d-orbitals based on numerical simulations of the quantum well. Interestingly, the superconducting transition temperature decreases while the second band is populated, which challenges the Bardeen-Cooper-Schrieffer theory. To explain this behaviour, we propose that the superconducting order parameters associated with the two bands have opposite signs with respect to each other.
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Submitted 6 June, 2018;
originally announced June 2018.
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Static and Radio-frequency magnetic response of high Tc Superconducting Quantum Interference Filters made by ion irradiation
Authors:
Eliana Recoba Pawlowski,
Julien Kermorvant,
Denis Crété,
Yves Lemaître,
Bruno Marcilhac,
Christian Ulysse,
François Couëdo,
Cheryl Feuillet-Palma,
Nicolas Bergeal,
Jérôme Lesueur
Abstract:
Superconducting Quantum Interference Filters (SQIF) are promising devices for Radio- Frequency (RF) detection combining low noise, high sensitivity, large dynamic range and wide-band capabilities. Impressive progress have been made recently in the field, with SQIF based antennas and amplifiers showing interesting properties in the GHz range using the well-established Nb/AlOx technology. The possib…
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Superconducting Quantum Interference Filters (SQIF) are promising devices for Radio- Frequency (RF) detection combining low noise, high sensitivity, large dynamic range and wide-band capabilities. Impressive progress have been made recently in the field, with SQIF based antennas and amplifiers showing interesting properties in the GHz range using the well-established Nb/AlOx technology. The possibility to extend these results to High Temperature Superconductors (HTS) is still open, and different techniques to fabricate HTS SQIFs are competing to make RF devices. We report on the DC and RF response of a High Temperature SQIF fabricated by the ion irradiation technique. It is made of 1000 Superconducting QUantum Interference Devices (SQUIDs) in series, with loop areas randomly distributed between 6 micron2 and 60 micron2. The DC transfer factor is around 450 V/T at optimal bias and temperature, and the maximum voltage swing around 2:5 mV . We show that such a SQIF detects RF signals up to 150 MHz. It presents linear characteristics for RF power spanning more than five decades, and non-linearities develop beyond PRF = -35 dBm in our set-up configuration. Second-harmonic generation has been shown to be minimum at the functioning point in the whole range of frequencies. A model has been developed which captures the essential features of the SQIF RF response.
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Submitted 28 February, 2018;
originally announced February 2018.
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Sample-based calibration for cryogenic broadband microwave reflectometry measurements
Authors:
F. Couëdo,
L. Bergé,
L. Dumoulin,
M. Aprili,
C. A. Marrache-Kikuchi,
J. Gabelli
Abstract:
The characteristic frequencies of a system provide important information on the phenomena that govern its physical properties. In this framework, there has recently been renewed interest in cryogenic microwave characterization for condensed matter systems since it allows to probe energy scales of the order of a few $μ$eV. However, broadband measurements of the absolute value of a sample response i…
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The characteristic frequencies of a system provide important information on the phenomena that govern its physical properties. In this framework, there has recently been renewed interest in cryogenic microwave characterization for condensed matter systems since it allows to probe energy scales of the order of a few $μ$eV. However, broadband measurements of the absolute value of a sample response in this frequency range are extremely sensitive to its environment and require a careful calibration. In this paper, we present an \textit{in situ} calibration method for cryogenic broadband microwave reflectometry experiments that is both simple to implement and through which the effect of the sample electromagnetic environment can be minimized. The calibration references are here provided by the sample itself, at three reference temperatures where its impedance is assumed or measured, and not by external standards as is usual. We compare the frequency-dependent complex impedance (0.1--2 GHz) of an a-Nb$_{15}$Si$_{85}$ superconducting thin film obtained through this Sample-Based Calibration (SBC) and through an Open-Short-Load Standard Calibration (SC) when working at very low temperature (0.02--4 K) and show that the SBC allows us to obtain the absolute response of the sample. This method brings the calibration planes as close as possible to the sample, so that the environment electrodynamic response does not affect the measurement, provided it is temperature independent. This results in a heightened sensitivity, for a given experimental set--up.
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Submitted 8 July, 2019; v1 submitted 1 January, 2018;
originally announced January 2018.
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Competition between electron pairing and phase coherence in superconducting interfaces
Authors:
G. Singh,
A. Jouan,
L. Benfatto,
F. Couedo,
P. Kumar,
A. Dogra,
R. Budhani,
S. Caprara,
M. Grilli,
E. Lesne,
A. Barthelemy,
M. Bibes,
C. Feuillet-Palma,
J. Lesueur,
N. Bergeal
Abstract:
The large diversity of exotic electronic phases displayed by two-dimensional superconductors confronts physicists with new challenges. These include the recently discovered quantum Griffith singularity in atomic Ga films, topological phases in proximized topological insulators and unconventional Ising pairing in transition metal dichalcogenide layers. In LaAlO3/SrTiO3 heterostructures, a gate tuna…
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The large diversity of exotic electronic phases displayed by two-dimensional superconductors confronts physicists with new challenges. These include the recently discovered quantum Griffith singularity in atomic Ga films, topological phases in proximized topological insulators and unconventional Ising pairing in transition metal dichalcogenide layers. In LaAlO3/SrTiO3 heterostructures, a gate tunable superconducting electron gas is confined in a quantum well at the interface between two insulating oxides. Remarkably, the gas coexists with both magnetism and strong Rashba spin-orbit coupling and is a candidate system for the creation of Majorana fermions. However, both the origin of superconductivity and the nature of the transition to the normal state over the whole doping range remain elusive. Missing such crucial information impedes harnessing this outstanding system for future superconducting electronics and topological quantum computing. Here we show that the superconducting phase diagram of LaAlO3/SrTiO3 is controlled by the competition between electron pairing and phase coherence. Through resonant microwave experiments, we measure the superfluid stiffness and infer the gap energy as a function of carrier density. Whereas a good agreement with the Bardeen-Cooper-Schrieffer (BCS) theory is observed at high carrier doping, we find that the suppression of Tc at low doping is controlled by the loss of macroscopic phase coherence instead of electron pairing as in standard BCS theory. We find that only a very small fraction of the electrons condenses into the superconducting state and propose that this corresponds to the weak filling of a high-energy dxz/yz band, more apt to host superconductivity
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Submitted 11 April, 2017;
originally announced April 2017.
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Ion irradiated YBa2Cu3O7 nano-meanders for superconducting single photon detectors
Authors:
P. Amari,
C. Feuillet-Palma,
A. Jouan,
F. Couedo,
N. Bourlet,
E. Géron,
M. Malnou,
L. Méchin,
A. Sharafiev,
J. Lesueur,
N. Bergeal
Abstract:
We report the fabrication of few hundred microns long, hundreds of nanometers wide and 30 nm thick meanders made from YBa2CU3O7. Thin films protected by a 8 nm-thick Ce02 cap layer have been patterned by high energy (a few tens of keV) oxygen ion irradiation through photoresist masks. DC and RF characterizations outline good superconducting properties of nano-meanders that could be used as Superco…
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We report the fabrication of few hundred microns long, hundreds of nanometers wide and 30 nm thick meanders made from YBa2CU3O7. Thin films protected by a 8 nm-thick Ce02 cap layer have been patterned by high energy (a few tens of keV) oxygen ion irradiation through photoresist masks. DC and RF characterizations outline good superconducting properties of nano-meanders that could be used as Superconducting Single Photon Detectors (SSPD). By mean of a resonant method, their inductance, which mainly sets the maximum speed of these devices, has been measured on a wide range of temperature. It compares favorably with expected values calculated from the geometry of the meanders and the known London penetration depth in YBa2CU3O7.
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Submitted 13 January, 2017; v1 submitted 22 December, 2016;
originally announced December 2016.
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Dissipative phases across the superconductor-to-insulator transition
Authors:
François Couëdo,
Olivier Crauste,
Anne-Aëlle Drillien,
Vincent Humbert,
Laurent Bergé,
Claire. A. Marrache-Kikuchi,
Louis Dumoulin
Abstract:
Competing phenomena in low dimensional systems can generate exotic electronic phases, either through symmetry breaking or a non-trivial topology. In two-dimensional (2D) systems, the interplay between superfluidity, disorder and repulsive interactions is especially fruitful in this respect although both the exact nature of the phases and the microscopic processes at play are still open questions.…
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Competing phenomena in low dimensional systems can generate exotic electronic phases, either through symmetry breaking or a non-trivial topology. In two-dimensional (2D) systems, the interplay between superfluidity, disorder and repulsive interactions is especially fruitful in this respect although both the exact nature of the phases and the microscopic processes at play are still open questions. In particular, in 2D, once superconductivity is destroyed by disorder, an insulating ground state is expected to emerge, as a result of a direct superconductor-to-insulator quantum phase transition. In such systems, no metallic state is theoretically expected to survive to the slightest disorder. Here we map out the phase diagram of amorphous NbSi thin films as functions of disorder and film thickness, with two metallic phases in between the superconducting and insulating ones. These two dissipative states, defined by a resistance which extrapolates to a finite value in the zero temperature limit, each bear a specific dependence on disorder. We argue that they originate from an inhomogeneous destruction of superconductivity, even if the system is morphologically homogeneous. Our results suggest that superconducting fluctuations can favor metallic states that would not otherwise exist.
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Submitted 2 November, 2016;
originally announced November 2016.
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Engineering quantum spin Hall insulators by strained-layer heterostructures
Authors:
Takafumi Akiho,
François Couëdo,
Hiroshi Irie,
Kyoichi Suzuki,
Koji Onomitsu,
Koji Muraki
Abstract:
Quantum spin Hall insulators (QSHIs), also known as two-dimensional topological insulators, have emerged as an unconventional class of quantum states with insulating bulk and conducting edges originating from nontrivial inverted band structures, and have been proposed as a platform for exploring spintronics applications and exotic quasiparticles related to the spin-helical edge modes. Despite theo…
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Quantum spin Hall insulators (QSHIs), also known as two-dimensional topological insulators, have emerged as an unconventional class of quantum states with insulating bulk and conducting edges originating from nontrivial inverted band structures, and have been proposed as a platform for exploring spintronics applications and exotic quasiparticles related to the spin-helical edge modes. Despite theoretical proposals for various materials, however, experimental demonstrations of QSHIs have so far been limited to two systems--HgTe/CdTe and InAs/GaSb--both of which are lattice-matched semiconductor heterostructures. Here we report transport measurements in yet another realization of a band-inverted heterostructure as a QSHI candidate--InAs/In$_{x}$Ga$_{1-x}$Sb with lattice mismatch. We show that the compressive strain in the In$_{x}$Ga$_{1-x}$Sb layer enhances the band overlap and energy gap. Consequently, high bulk resistivity, two orders of magnitude higher than for InAs/GaSb, is obtained deep in the band-inverted regime. The strain also enhances bulk Rashba spin-orbit splitting, leading to an unusual situation where the Fermi level crosses only one spin branch for electronlike and holelike bands over a wide density range. These properties make this system a promising platform for robust QSHIs with unique spin properties and demonstrate strain to be an important ingredient for tuning spin-orbit interaction.
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Submitted 10 November, 2016; v1 submitted 24 August, 2016;
originally announced August 2016.
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Single-edge transport in an InAs/GaSb quantum spin Hall insulator
Authors:
François Couëdo,
Hiroshi Irie,
Kyoichi Suzuki,
Koji Onomitsu,
Koji Muraki
Abstract:
We report transport measurements in a single edge channel of an InAs/GaSb quantum spin Hall insulator, where the conduction occurs through only one pair of counterpropagating edge modes. By using a specific sample design involving highly asymmetric current paths, we electrically isolate a single edge channel of the two-dimensional topological insulator from the other edge. This enables us to probe…
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We report transport measurements in a single edge channel of an InAs/GaSb quantum spin Hall insulator, where the conduction occurs through only one pair of counterpropagating edge modes. By using a specific sample design involving highly asymmetric current paths, we electrically isolate a single edge channel of the two-dimensional topological insulator from the other edge. This enables us to probe a single edge by multiterminal measurements. Both two-terminal and four-terminal resistances show a nearly quantized plateau around $h/e^2$ for a 4-$μ$m-long edge, indicating quasiballistic transport. Our approach is advantageous in that it allows us to gain insight into a microscopic region from local measurements.
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Submitted 11 July, 2016; v1 submitted 6 June, 2016;
originally announced June 2016.
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Destruction of superconductivity in disordered materials : a dimensional crossover
Authors:
O. Crauste,
F. Couëdo,
L. Bergé,
C. A. Marrache-Kikuchi,
L. Dumoulin
Abstract:
The disorder-induced Superconductor-to-Insulator Transition in amorphous Nb$_{x}$Si$_{1-x}$ two-dimensional thin films is studied for different niobium compositions $x$ through a variation of the sample thickness $d$. We show that the critical thickness $d_c$, separating a superconducting regime from an insulating one, increases strongly with diminishing $x$, thus attaining values of over 100 Å. T…
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The disorder-induced Superconductor-to-Insulator Transition in amorphous Nb$_{x}$Si$_{1-x}$ two-dimensional thin films is studied for different niobium compositions $x$ through a variation of the sample thickness $d$. We show that the critical thickness $d_c$, separating a superconducting regime from an insulating one, increases strongly with diminishing $x$, thus attaining values of over 100 Å. The corresponding phase diagram in the $(d, x)$ plane is inferred and related to the three-dimensional situation. The two-dimensional Superconductor-to-Insulator Transition well connects with the three-dimensional Superconductor-to-Metal Transition.
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Submitted 15 August, 2014;
originally announced August 2014.
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Cryogenic Calibration Setup for Broadband Complex Impedance Measurements
Authors:
P. Diener,
F. Couëdo,
C. Marrache-Kikuchi,
M. Aprili,
J. Gabelli
Abstract:
Reflection measurements give access to the complex impedance of a material on a wide frequency range. This is of interest to study the dynamical properties of various materials, for instance disordered superconductors. However reflection measurements made at cryogenic temperature suffer from the difficulty to reliably subtract the circuit contribution. Here we report on the design and first tests…
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Reflection measurements give access to the complex impedance of a material on a wide frequency range. This is of interest to study the dynamical properties of various materials, for instance disordered superconductors. However reflection measurements made at cryogenic temperature suffer from the difficulty to reliably subtract the circuit contribution. Here we report on the design and first tests of a setup able to precisely calibrate in situ the sample reflection, at 4.2 K and up to 2 GHz, by switching and measuring, during the same cool down, the sample and three calibration standards.
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Submitted 17 September, 2013;
originally announced September 2013.
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Effect of annealing on the superconducting properties of a-Nb(x)Si(1-x) thin films
Authors:
O. Crauste,
A. Gentils,
F. Couëdo,
Y. Dolgorouky,
L. Bergé,
S. Collin,
C. A. Marrache-Kikuchi,
L. Dumoulin
Abstract:
a-Nb(x)Si(1-x) thin films with thicknesses down to 25 Å have been structurally characterized by TEM (Transmission Electron Microscopy) measurements. As-deposited or annealed films are shown to be continuous and homogeneous in composition and thickness, up to an annealing temperature of 500°C. We have carried out low temperature transport measurements on these films close to the superconductor-to-i…
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a-Nb(x)Si(1-x) thin films with thicknesses down to 25 Å have been structurally characterized by TEM (Transmission Electron Microscopy) measurements. As-deposited or annealed films are shown to be continuous and homogeneous in composition and thickness, up to an annealing temperature of 500°C. We have carried out low temperature transport measurements on these films close to the superconductor-to-insulator transition (SIT), and shown a qualitative difference between the effect of annealing or composition, and a reduction of the film thickness on the superconducting properties of a-NbSi. These results question the pertinence of the sheet resistance R_square as the relevant parameter to describe the SIT.
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Submitted 16 April, 2013;
originally announced April 2013.
