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Large inverted band-gap in strained three-layer InAs/GaInSb quantum wells
Authors:
C. Avogadri,
S. Gebert,
S. S. Krishtopenko,
I. Castillo,
C. Consejo,
S. Ruffenach,
C. Roblin,
C. Bray,
Y. Krupko,
S. Juillaguet,
S. Contreras,
S. Juillaguet,
A. Wolf,
F. Hartmann,
S. Höfling,
G. Boissier,
J. B. Rodriguez,
S. Nanot,
E. Tournié,
F. Teppe,
B. Jouault
Abstract:
Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a band-gap vanishing with temperature, while the gap in InAs/GaSb QSHIs is rather temperature-independent.Here, we report on the realization of large inverted band-gap in strained three-layer InAs/GaInSb QWs. By temperature…
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Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a band-gap vanishing with temperature, while the gap in InAs/GaSb QSHIs is rather temperature-independent.Here, we report on the realization of large inverted band-gap in strained three-layer InAs/GaInSb QWs. By temperature-dependent magnetotransport measurements of gated Hall bar devices, we extract a gap as high as 45 meV. Combining local and non-local measurements, we attribute the edge conductivity observed at temperatures up to 40 K to the topological edge channels with equilibration lengths of a few micrometers. Our findings pave the way toward manipulating edge transport at high temperatures in QW heterostructures.
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Submitted 11 March, 2022;
originally announced March 2022.
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Zero temperature ordering dynamics in two dimensional BNNNI model
Authors:
Soham Biswas,
Mauricio Martin Saavedra Contreras
Abstract:
We investigate the dynamics of a two dimensional bi-axial next nearest neighbour Ising (BNNNI) model following a quench to zero temperature. The Hamiltonian is given by $H = -J_0\sum_{i,j=1}^L [(S_{i,j}S_{i+1,j}+S_{i,j}S_{i,j+1}) -κ(S_{i,j}S_{i+2,j} + S_{i,j}S_{i,j+2})]$ . For $κ<1$, the system does not reach the equilibrium ground state and keep evolving in active states for ever. For $κ\geq 1$,…
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We investigate the dynamics of a two dimensional bi-axial next nearest neighbour Ising (BNNNI) model following a quench to zero temperature. The Hamiltonian is given by $H = -J_0\sum_{i,j=1}^L [(S_{i,j}S_{i+1,j}+S_{i,j}S_{i,j+1}) -κ(S_{i,j}S_{i+2,j} + S_{i,j}S_{i,j+2})]$ . For $κ<1$, the system does not reach the equilibrium ground state and keep evolving in active states for ever. For $κ\geq 1$, though the system reaches a final state, but it do not reach the ground state always and freezes to a striped state with a finite probability like two dimensional ferromagnetic Ising model and ANNNI model. The overall dynamical behaviour for $κ> 1$ and $κ=1$ is quite different. The residual energy decays in a power law for both $ κ>1$ and $κ=1$ from which the dynamical exponent $z$ have been estimated. The persistence probability shows algebraic decay for $κ> 1$ with an exponent $θ= 0.22 \pm 0.002$ while the dynamical exponent for ordering $z=2.33\pm 0.01$. For $κ=1$, the system belongs to a completely different dynamical class with $θ= 0.332 \pm 0.002$ and $z=2.47\pm 0.04$. We have computed the freezing probability for different values of $κ$. We have also studied the decay of autocorrelation function with time for different regime of $κ$ values. The results have been compared with that of the two dimensional ANNNI model.
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Submitted 28 May, 2019;
originally announced May 2019.
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Reversible optical doping of graphene
Authors:
Antoine Tiberj,
Miguel Rubio-Roy,
Matthieu Paillet,
Jean-Roch Huntzinger,
Périne Landois,
Mirko Mikolasek,
Sylvie Contreras,
Jean-Louis Sauvajol,
Erik Dujardin,
Ahmed-Azmi Zahab
Abstract:
The ultimate surface exposure provided by graphene monolayer makes it the ideal sensor platform but also exposes its intrinsic properties to any environmental perturbations. In this work, we demonstrate that the charge carrier density of graphene exfoliated on a SiO$_2$/Si substrate can be finely and reversibly tuned between electron and hole doping with visible photons. This photo-induced doping…
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The ultimate surface exposure provided by graphene monolayer makes it the ideal sensor platform but also exposes its intrinsic properties to any environmental perturbations. In this work, we demonstrate that the charge carrier density of graphene exfoliated on a SiO$_2$/Si substrate can be finely and reversibly tuned between electron and hole doping with visible photons. This photo-induced doping happens under moderate laser power conditions but is significantly affected by the substrate cleaning method. In particular, it is found to require hydrophilic substrates and to vanish in suspended graphene. These findings suggest that optically gated graphene devices operating with a sub-second time scale can be envisioned but also that Raman spectroscopy is not always as non-invasive as generally assumed.
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Submitted 16 April, 2013;
originally announced April 2013.
