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Many-particle hybridization of optical transitions from zero-mode Landau levels in HgTe quantum wells
Authors:
S. Ruffenach,
S. S. Krishtopenko,
A. V. Ikonnikov,
C. Consejo,
J. Torres,
X. Baudry,
P. Ballet,
B. Jouault,
F. Teppe
Abstract:
We present far-infrared magnetospectroscopy measurements of a HgTe quantum well in the inverted band structure regime over the temperature range of 2 to 60 K. The particularly low electron concentration enables us to probe the temperature evolution of all four possible optical transitions originating from zero-mode Landau levels, which are split off from the edges of the electron-like and hole-lik…
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We present far-infrared magnetospectroscopy measurements of a HgTe quantum well in the inverted band structure regime over the temperature range of 2 to 60 K. The particularly low electron concentration enables us to probe the temperature evolution of all four possible optical transitions originating from zero-mode Landau levels, which are split off from the edges of the electron-like and hole-like bands. By analyzing their resonance energies, we reveal an unambiguous breakdown of the single-particle picture indicating that the explanation of the anticrossing of zero-mode Landau levels in terms of bulk and interface inversion asymmetries is insufficient. Instead, the observed behavior of the optical transitions is well explained by their hybridization driven by electron-electron interaction. We emphasize that our proposed many-particle mechanism is intrinsic to HgTe quantum wells of any crystallographic orientation, including (110) and (111) wells, where bulk and interface inversion asymmetries do not induce the anticrossing of zero-mode Landau levels.
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Submitted 1 July, 2025;
originally announced July 2025.
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Nonlinear Terahertz electroluminescence from Dirac-Landau polaritons
Authors:
B. Benhamou-Bui,
C. Consejo,
S. S. Krishtopenko,
S. Ruffenach,
C. Bray,
J. Torres,
J. Dzian,
F. Le Mardelé,
A. Pagot,
X. Baudry,
S. V. Morozov,
N. N. Mikhailov,
S. A. Dvoretskii,
B. Jouault,
P. Ballet,
M. Orlita,
C. Ciuti,
F. Teppe
Abstract:
We report the observation of Dirac-Landau polaritons via THz magnetoreflectivity spectroscopy, demonstrating strong coupling between cyclotron transitions of two-dimensional Dirac fermions in HgTe quantum wells and optical cavity modes. We demonstrate efficient nonlinear electroluminescence, characterized by a strongly out-of-equilibrium polariton distribution dominated by emission from the upper…
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We report the observation of Dirac-Landau polaritons via THz magnetoreflectivity spectroscopy, demonstrating strong coupling between cyclotron transitions of two-dimensional Dirac fermions in HgTe quantum wells and optical cavity modes. We demonstrate efficient nonlinear electroluminescence, characterized by a strongly out-of-equilibrium polariton distribution dominated by emission from the upper polariton branches. Model calculations, based on the nonlinear dependence of the emission intensity and spectral narrowing with bias voltage, indicate a polariton occupancy per mode close to unity, with a significant contribution from stimulated polariton emission. These findings open promising prospects for the development of Dirac-Landau polariton condensates and low-threshold, tunable terahertz polariton lasers based on cyclotron emission.
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Submitted 7 May, 2025; v1 submitted 11 February, 2025;
originally announced February 2025.
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Spin-dependent photovoltage in graphene/MoS2-based field-effect transistors
Authors:
K. Dinar,
J. Delgado-Notario,
C. Bray,
K. Maussang,
E. Perez-Martin,
B. Benhamou-Bui,
C. Consejo,
S. Ruffenach,
S. S. Krishtopenko,
L. Bonnet,
M. Paillet,
J. Torres,
Y. M. Meziani,
I. Rozhansky,
B. Jouault,
S. Nanot,
F. Teppe
Abstract:
It has recently been shown that Terahertz sensors can effectively detect the spin resonances of Dirac fermions in graphene. The associated photovoltaic measurement technique allows for the investigation of the intrinsic spin-orbit coupling in graphene as well as its topological properties from microwave to Terahertz frequencies. In this work, using graphene/MoS2-based Field-Effect Transistors, we…
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It has recently been shown that Terahertz sensors can effectively detect the spin resonances of Dirac fermions in graphene. The associated photovoltaic measurement technique allows for the investigation of the intrinsic spin-orbit coupling in graphene as well as its topological properties from microwave to Terahertz frequencies. In this work, using graphene/MoS2-based Field-Effect Transistors, we observed a magnetic resonance photovoltage signal in the Gigahertz range that is independent of the gate bias. The dispersion of the associated spin-flip transitions remains intriguingly unaffected by the MoS2 layer. In parallel, the spin-related signal consistently appears as a drop in photovoltage, regardless of the signal's polarity or origin, whether it arises from plasma wave rectification or thermoelectric effects. This behavior is interpreted as a decrease in the system's spin polarization due to spin-dependent recombination or scattering of photocarriers. Understanding the various photovoltaic signals in highly sensitive Gigahertz/Terahertz sensors paves the way for exploring spin-dependent mechanisms in two-dimensional quantum materials, influenced by proximity effects such as spin-orbit coupling, topology, and magnetism.
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Submitted 17 May, 2025; v1 submitted 25 November, 2024;
originally announced November 2024.
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Multi-probe analysis to separate edge currents from bulk currents in quantum spin Hall insulators and to analyze their temperature dependence
Authors:
S. Benlenqwanssa,
S. S. Krishtopenko,
M. Meyer,
B. Benhamou-Bui,
L. Bonnet,
A. Wolf,
C. Bray,
C. Consejo,
S. Ruffenach,
S. Nanot,
J. -B. Rodriguez,
E. Tournié,
F. Hartmann,
S. Höfling,
F. Teppe,
B. Jouault
Abstract:
We present a multi-probe transport analysis that effectively separates bulk and edge currents in large Hall bar devices with standard geometries. Applied to transport measurements on all possible four-probe configurations of six-probe Hall bar devices made of inverted three-layer InAs/GaInSb quantum wells (QWs), our analysis not only reveals the presence of dissipative edge currents in the topolog…
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We present a multi-probe transport analysis that effectively separates bulk and edge currents in large Hall bar devices with standard geometries. Applied to transport measurements on all possible four-probe configurations of six-probe Hall bar devices made of inverted three-layer InAs/GaInSb quantum wells (QWs), our analysis not only reveals the presence of dissipative edge currents in the topological gap, but also allows the temperature dependence of bulk and edge conductivity to be evaluated separately. The temperature dependence of the edge conductivity for Hall bar channels from 10 $μ$m to 70~$μ$m in the range of 1.5 K to 45 K is consistent with the theoretical expectation of weakly interacting helical edge electrons with backscattering due to localized magnetic moments of charge impurities. We argue that these charge impurities are naturally associated with intrinsic Ga-antisite defects, which act as double acceptors in InAs/Ga(In)Sb-based QWs.
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Submitted 29 October, 2024;
originally announced October 2024.
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Terahertz and gigahertz magneto-ratchets in graphene-based 2D metamaterials
Authors:
Marcel Hild,
Erwin Mönch,
Leonid E. Golub,
Ivan A. Dmitriev,
Ivan Yahniuk,
Katharina Amann,
Julia Amann,
Jonathan Eroms,
Jörg Wunderlich,
Dieter Weiss,
Christophe Consejo,
Cedric Bray,
Kenneth Maussang,
Frederic Teppe,
Joanna Gumenjuk-Sichevska,
Kenji Watanabe,
Takashi Taniguchi,
Sergey D. Ganichev
Abstract:
We report on the observation and study of the magneto-ratchet effect in a graphene-based two-dimensional metamaterial formed by a graphite gate that is placed below a graphene monolayer and patterned with an array of triangular antidots. We demonstrate that terahertz/gigahertz excitation of the metamaterial leads to sign-alternating magneto-oscillations with an amplitude that exceeds the ratchet c…
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We report on the observation and study of the magneto-ratchet effect in a graphene-based two-dimensional metamaterial formed by a graphite gate that is placed below a graphene monolayer and patterned with an array of triangular antidots. We demonstrate that terahertz/gigahertz excitation of the metamaterial leads to sign-alternating magneto-oscillations with an amplitude that exceeds the ratchet current at zero magnetic field by orders of magnitude. The oscillations are shown to be related to the Shubnikov-de Haas effect. In addition to the giant ratchet current oscillations we detect resonant ratchet currents caused by the cyclotron and electron spin resonances. The results are well described by the developed theory considering the magneto-ratchet effect caused by the interplay of the near-field radiation and the nonuniform periodic electrostatic potential of the metamaterial controlled by the gate voltages.
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Submitted 22 July, 2024;
originally announced July 2024.
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Dirac-like fermions anomalous magneto-transport in a spin-polarized oxide two-dimensional electron system
Authors:
Yu Chen,
Maria D'Antuono,
Mattia Trama,
Daniele Preziosi,
Benoit Jouault,
Frédéric Teppe,
Christophe Consejo,
Carmine A. Perroni,
Roberta Citro,
Daniela Stornaiuolo,
Marco Salluzzo
Abstract:
In two-dimensional electron systems (2DES) the breaking of the inversion, time-reversal and bulk crystal-field symmetries is interlaced with the effects of spin-orbit coupling (SOC) triggering exotic quantum phenomena. Here, we used epitaxial engineering to design and realize a 2DES characterized simultaneously by ferromagnetic order, large Rashba SOC and hexagonal band warping at the (111) interf…
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In two-dimensional electron systems (2DES) the breaking of the inversion, time-reversal and bulk crystal-field symmetries is interlaced with the effects of spin-orbit coupling (SOC) triggering exotic quantum phenomena. Here, we used epitaxial engineering to design and realize a 2DES characterized simultaneously by ferromagnetic order, large Rashba SOC and hexagonal band warping at the (111) interfaces between LaAlO$_{3}$, EuTiO$_{3}$ and SrTiO$_{3}$ insulators. The 2DES displays anomalous quantum corrections to the magneto-conductance driven by the time-reversal-symmetry breaking occurring below the magnetic transition temperature. The results are explained by the emergence of a non-trivial Berry phase and competing weak anti-localization / weak localization back-scattering of Dirac-like fermions, mimicking the phenomenology of gapped topological insulators. These findings open perspectives for the engineering of novel spin-polarized functional 2DES holding promises in spin-orbitronics and topological electronics.
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Submitted 20 June, 2024;
originally announced June 2024.
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Gate tunable terahertz cyclotron emission from two-dimensional Dirac fermions
Authors:
B. Benhamou-Bui,
C. Consejo,
S. S. Krishtopenko,
M. Szoła,
K. Maussang,
S. Ruffenach,
E. Chauveau,
S. Benlemqwanssa,
C. Bray,
X. Baudry,
P. Ballet,
S. V. Morozov,
V. I. Gavrilenko,
N. N. Mikhailov,
S. A. Dvoretskii,
B. Jouault,
J. Torres,
F. Teppe
Abstract:
Two-dimensional Dirac fermions in HgTe quantum wells close to the topological phase transition can generate significant cyclotron emission that is magnetic field tunable in the Terahertz (THz) frequency range. Due to their relativistic-like dynamics, their cyclotron mass is strongly dependent on their electron concentration in the quantum well, providing a second tunability lever and paving the wa…
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Two-dimensional Dirac fermions in HgTe quantum wells close to the topological phase transition can generate significant cyclotron emission that is magnetic field tunable in the Terahertz (THz) frequency range. Due to their relativistic-like dynamics, their cyclotron mass is strongly dependent on their electron concentration in the quantum well, providing a second tunability lever and paving the way for a gate-tunable, permanent-magnet Landau laser. In this work, we demonstrate the proof-of-concept of such a back-gate tunable THz cyclotron emitter at fixed magnetic field. The emission frequency detected at 1.5 Tesla is centered on 2.2 THz and can already be electrically tuned over 250 GHz. With an optimized gate and a realistic permanent magnet of 1.0 Tesla, we estimate that the cyclotron emission could be continuously and rapidly tunable by the gate bias between 1 and 3 THz, that is to say on the less covered part of the THz gap.
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Submitted 21 July, 2023;
originally announced July 2023.
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Terahertz cyclotron emission from two-dimensional Dirac fermions
Authors:
S. Gebert,
C. Consejo,
S. S. Krishtopenko,
S. Ruffenach,
M. Szola,
J. Torres,
C. Bray,
B. Jouault,
M. Orlita,
X. Baudry,
P. Ballet,
S. V. Morozov,
V. I. Gavrilenko,
N. N. Mikhailov,
S. A. Dvoretskii,
F. Teppe
Abstract:
Since the emergence of graphene, we have seen several proposals for the realization of Landau lasers tunable over the terahertz frequency range. The hope was that the non-equidistance of the Landau levels from Dirac fermions would suppress the harmful non-radiative Auger recombination. Unfortunately, even with this non-equidistance an unfavorable non-radiative process persists in Landau-quantized…
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Since the emergence of graphene, we have seen several proposals for the realization of Landau lasers tunable over the terahertz frequency range. The hope was that the non-equidistance of the Landau levels from Dirac fermions would suppress the harmful non-radiative Auger recombination. Unfortunately, even with this non-equidistance an unfavorable non-radiative process persists in Landau-quantized graphene, and so far no cyclotron emission from Dirac fermions has been reported. One way to eliminate this last non-radiative process is to sufficiently modify the dispersion of the Landau levels by opening a small gap in the linear band structure. A proven example of such gapped graphene-like materials are HgTe quantum wells close to the topological phase transition. In this work, we experimentally demonstrate Landau emission from Dirac fermions in such HgTe quantum wells, where the emission is tunable by both the magnetic field and the carrier concentration. Consequently, these results represent an advance in the realization of terahertz Landau lasers tunable by magnetic field and gate-voltage.
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Submitted 14 January, 2023;
originally announced January 2023.
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Current-induced enhancement of photo-response in graphene THz radiation detectors
Authors:
K. Indykiewicz,
C. Bray,
C. Consejo,
F. Teppe,
S. Danilov,
S. D. Ganichev,
A. Yurgens
Abstract:
Thermoelectric readout in a graphene THz radiation detector requires a p-n junction across the graphene channel. Even without an intentional p-n junction, two latent junctions can exist in the vicinity of the electrodes/antennas through the proximity to metal. In a symmetrical structure, these junctions are connected back-to-back and therefore counterbalance each other with regard to rectification…
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Thermoelectric readout in a graphene THz radiation detector requires a p-n junction across the graphene channel. Even without an intentional p-n junction, two latent junctions can exist in the vicinity of the electrodes/antennas through the proximity to metal. In a symmetrical structure, these junctions are connected back-to-back and therefore counterbalance each other with regard to rectification of the ac signal. Because of the Peltier effect, a small dc current results in additional heating in one- and cooling in another p-n junction, thereby breaking the symmetry. The p-n junctions then no longer cancel, resulting in a greatly enhanced rectified signal. This allows to simplify the design and effectively control the sensitivity of the THz-radiation detectors.
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Submitted 6 October, 2022;
originally announced October 2022.
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Temperature Dependent Zero-Field Splittings in Graphene
Authors:
C. Bray,
K. Maussang,
C. Consejo,
J. A. Delgado-Notario,
S. S. Krishtopenko,
I. Yahniuk,
S. Gebert,
S. Ruffenach,
K. Dinar,
E. Moench,
K. Indykiewicz,
B. Jouault,
J. Torres,
Y. M. Meziani,
W. Knap,
A. Yurgens,
S. D. Ganichev,
F. Teppe
Abstract:
Graphene is a quantum spin Hall insulator with a 45 $μ$eV wide non-trivial topological gap induced by the intrinsic spin-orbit coupling. Even though this zero-field spin splitting is weak, it makes graphene an attractive candidate for applications in quantum technologies, given the resulting long spin relaxation time. On the other side, the staggered sub-lattice potential, resulting from the coupl…
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Graphene is a quantum spin Hall insulator with a 45 $μ$eV wide non-trivial topological gap induced by the intrinsic spin-orbit coupling. Even though this zero-field spin splitting is weak, it makes graphene an attractive candidate for applications in quantum technologies, given the resulting long spin relaxation time. On the other side, the staggered sub-lattice potential, resulting from the coupling of graphene with its boron nitride substrate, compensates intrinsic spin-orbit coupling and decreases the non-trivial topological gap, which may lead to the phase transition into trivial band insulator state. In this work, we present extensive experimental studies of the zero-field splittings in monolayer and bilayer graphene in a temperature range 2K-12K by means of sub-Terahertz photoconductivity-based electron spin resonance technique. Surprisingly, we observe a decrease of the spin splittings with increasing temperature. We discuss the origin of this phenomenon by considering possible physical mechanisms likely to induce a temperature dependence of the spin-orbit coupling. These include the difference in the expansion coefficients between the graphene and the boron nitride substrate or the metal contacts, the electron-phonon interactions, and the presence of a magnetic order at low temperature. Our experimental observation expands knowledge about the non-trivial topological gap in graphene.
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Submitted 23 December, 2022; v1 submitted 28 September, 2022;
originally announced September 2022.
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Large inverted band-gap in strained three-layer InAs/GaInSb quantum wells
Authors:
C. Avogadri,
S. Gebert,
S. S. Krishtopenko,
I. Castillo,
C. Consejo,
S. Ruffenach,
C. Roblin,
C. Bray,
Y. Krupko,
S. Juillaguet,
S. Contreras,
S. Juillaguet,
A. Wolf,
F. Hartmann,
S. Höfling,
G. Boissier,
J. B. Rodriguez,
S. Nanot,
E. Tournié,
F. Teppe,
B. Jouault
Abstract:
Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a band-gap vanishing with temperature, while the gap in InAs/GaSb QSHIs is rather temperature-independent.Here, we report on the realization of large inverted band-gap in strained three-layer InAs/GaInSb QWs. By temperature…
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Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a band-gap vanishing with temperature, while the gap in InAs/GaSb QSHIs is rather temperature-independent.Here, we report on the realization of large inverted band-gap in strained three-layer InAs/GaInSb QWs. By temperature-dependent magnetotransport measurements of gated Hall bar devices, we extract a gap as high as 45 meV. Combining local and non-local measurements, we attribute the edge conductivity observed at temperatures up to 40 K to the topological edge channels with equilibration lengths of a few micrometers. Our findings pave the way toward manipulating edge transport at high temperatures in QW heterostructures.
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Submitted 11 March, 2022;
originally announced March 2022.
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Many-particle effects in optical transitions from zero-mode Landau levels in HgTe quantum wells
Authors:
S. S. Krishtopenko,
A. M. Kadykov,
S. Gebert,
S. Ruffenach,
C. Consejo,
J. Torres,
C. Avogadri,
B. Jouault,
W. Knap,
N. N. Mikhailov,
S. A. Dvoretskii,
F. Teppe
Abstract:
We report on the far-infrared magnetospectroscopy of HgTe quantum wells with inverted band ordering at different electron concentrations. We particularly focus on optical transitions from zero-mode Landau levels, which split from the edges of electron-like and hole-like bands. We observe a pronounced dependence of the transition energies on the electron concentration varied by persistent photocond…
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We report on the far-infrared magnetospectroscopy of HgTe quantum wells with inverted band ordering at different electron concentrations. We particularly focus on optical transitions from zero-mode Landau levels, which split from the edges of electron-like and hole-like bands. We observe a pronounced dependence of the transition energies on the electron concentration varied by persistent photoconductivity effect. This is striking evidence that in addition to the already well-documented crystalline and interface asymmetries, electron-electron interactions also have a significant impact on the usual behavior of the optical transitions from zero mode Landau levels.
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Submitted 27 April, 2020; v1 submitted 10 December, 2019;
originally announced December 2019.
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Suppressed Auger scattering and tunable light emission of Landau-quantized massless Kane electrons
Authors:
D. B. But,
M. Mittendorff,
C. Consejo,
F. Teppe,
N. N. Mikhailov,
S. A. Dvoretskii,
C. Faugeras,
S. Winnerl,
M. Helm,
W. Knap,
M. Potemski,
M. Orlita
Abstract:
The Landau level laser has been proposed a long time ago as a unique source of monochromatic radiation, widely tunable in the THz and infrared spectral ranges using an externally applied magnetic field. In spite of decades of efforts, this appealing concept never resulted in the design of a reliable device. This is due to efficient Auger scattering of Landau-quantized electrons, which is an intrin…
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The Landau level laser has been proposed a long time ago as a unique source of monochromatic radiation, widely tunable in the THz and infrared spectral ranges using an externally applied magnetic field. In spite of decades of efforts, this appealing concept never resulted in the design of a reliable device. This is due to efficient Auger scattering of Landau-quantized electrons, which is an intrinsic non-radiative recombination channel that eventually gains over cyclotron emission in all materials studied so far: in conventional semiconductors with parabolic bands, but also in graphene with massless electrons. The Auger processes are favored in these systems by Landau levels (or their subsets) equally spaced in energy. Here we show that this scheme does not apply to massless Kane electrons in gapless HgCdTe alloy, in which undesirable Auger scattering is strongly suppressed and the sizeable cyclotron emission observed, for the first time in the case of massless particles. The gapless HgCdTe thus appears as a material of choice for future technology of Landau level lasers.
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Submitted 21 July, 2020; v1 submitted 26 June, 2019;
originally announced June 2019.
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Massless Dirac fermions in III-V semiconductor quantum wells
Authors:
S. S. Krishtopenko,
W. Desrat,
K. E. Spirin,
C. Consejo,
S. Ruffenach,
F. Gonzalez-Posada,
B. Jouault,
W. Knap,
K. V. Maremyanin,
V. I. Gavrilenko,
G. Boissier,
J. Torres,
M. Zaknoune,
E. Tournié,
F. Teppe
Abstract:
We report on the clear evidence of massless Dirac fermions in two-dimensional system based on III-V semiconductors. Using a gated Hall bar made on a three-layer InAs/GaSb/InAs quantum well, we restore the Landau levels fan chart by magnetotransport and unequivocally demonstrate a gapless state in our sample. Measurements of cyclotron resonance at different electron concentrations directly indicate…
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We report on the clear evidence of massless Dirac fermions in two-dimensional system based on III-V semiconductors. Using a gated Hall bar made on a three-layer InAs/GaSb/InAs quantum well, we restore the Landau levels fan chart by magnetotransport and unequivocally demonstrate a gapless state in our sample. Measurements of cyclotron resonance at different electron concentrations directly indicate a linear band crossing at the $Γ$ point of Brillouin zone. Analysis of experimental data within analytical Dirac-like Hamiltonian allows us not only determing velocity $v_F=1.8\cdot10^5$ m/s of massless Dirac fermions but also demonstrating significant non-linear dispersion at high energies.
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Submitted 15 February, 2019; v1 submitted 6 December, 2018;
originally announced December 2018.
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Perspectives of HgTe Topological Insulators for Quantum Hall Metrology
Authors:
Ivan Yahniuk,
Sergey S. Krishtopenko,
Grzegorz Grabecki,
Benoit Jouault,
Christophe Consejo,
Wilfried Desrat,
Magdalena Majewicz,
Alexander M. Kadykov,
Kirill E. Spirin,
Vladimir I. Gavrilenko,
Nikolay N. Mikhailov,
Sergey A. Dvoretsky,
Dmytro B. But,
Frederic Teppe,
Jerzy Wróbel,
Grzegorz Cywiński,
1 Sławomir Kret,
Tomasz Dietl,
Wojciech Knap
Abstract:
We report the studies of high-quality HgTe/(Cd,Hg)Te quantum wells (QWs) with a width close to the critical one $d_c$, corresponding to the topological phase transition and graphene like band structure in view of their applications for Quantum Hall Effect (QHE) resistance standards. We show that in the case of inverted band ordering, the coexistence of conducting topological helical edge states to…
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We report the studies of high-quality HgTe/(Cd,Hg)Te quantum wells (QWs) with a width close to the critical one $d_c$, corresponding to the topological phase transition and graphene like band structure in view of their applications for Quantum Hall Effect (QHE) resistance standards. We show that in the case of inverted band ordering, the coexistence of conducting topological helical edge states together with QHE chiral states degrades the precision of the resistance quantization. By experimental and theoretical studies we demonstrate how one may reach very favorable conditions for the QHE resistance standards: low magnetic fields allowing to use permanent magnets ( B $\leq$ 1.4T) and simultaneously realtively high teperatures (liquid helium, T $\geq$ 1.3K). This way we show that HgTe QW based QHE resistance standards may replace their graphene and GaAs counterparts and pave the way towards large scale fabrication and applications of QHE metrology devices.
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Submitted 17 October, 2018;
originally announced October 2018.
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Heterostructured hBN-BP-hBN Nanodetectors at THz Frequencies
Authors:
Leonardo Viti,
Jin Hu,
Dominique Coquillat,
Antonio Politano,
Christophe Consejo,
Wojciech Knap,
Miriam S. Vitiello
Abstract:
Artificial semiconductor heterostructures played a pivotal role in modern electronic and photonic technologies, providing a highly effective mean for the manipulation and control of carriers, from the visible to the Terahertz (THz) frequency range. Despite the exceptional versatility, they commonly require challenging epitaxial growth procedures due to the need of clean and abrupt interfaces, whic…
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Artificial semiconductor heterostructures played a pivotal role in modern electronic and photonic technologies, providing a highly effective mean for the manipulation and control of carriers, from the visible to the Terahertz (THz) frequency range. Despite the exceptional versatility, they commonly require challenging epitaxial growth procedures due to the need of clean and abrupt interfaces, which proved to be a major obstacle for the realization of room-temperature (RT), high-efficiency devices, like source, detectors or modulators, especially in the far-infrared. Two-dimensional (2D) layered materials, like graphene and phosphorene, recently emerged as a reliable, flexible and versatile alternative for devising efficient RT detectors operating at Terahertz frequencies. We here combine the benefit of the heterostructure architecture with the exceptional technological potential of 2D layered nanomaterials; by reassembling the thin isolated atomic planes of hexagonal borum nitride (hBN) with a few layer phosphorene (black phosphorus (BP)) we mechanically stacked hBN/BP/hBN heterostructures to devise high-efficiency THz photodetectors operating in the 0.3-0.65 THz range from 4K to 300K with a record SNR=20000.
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Submitted 3 May, 2018;
originally announced May 2018.
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Terahertz detection of magnetic field-driven topological phase transition in HgTe-based transistors
Authors:
A. Kadykov,
F. Teppe,
C. Consejo,
L. Viti,
M. Vitiello,
D. Coquillat,
S. Ruffenach,
S. Morozov,
S. Kristopenko,
M. Marcinkiewicz,
N. Dyakonova,
W. Knap,
V. Gavrilenko,
N. N. Michailov,
S. A. Dvoretskii
Abstract:
We report on Terahertz detection by inverted band structure HgTe-based Field Effect Transistor up to room temperature. At low temperature, we show that nonlinearities of the transistor channel allows for the observation of the quantum phase transition due to the avoided crossing of zero-mode Landau levels in HgTe 2D topological insulators. These results pave the way towards Terahertz topological F…
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We report on Terahertz detection by inverted band structure HgTe-based Field Effect Transistor up to room temperature. At low temperature, we show that nonlinearities of the transistor channel allows for the observation of the quantum phase transition due to the avoided crossing of zero-mode Landau levels in HgTe 2D topological insulators. These results pave the way towards Terahertz topological Field Effect Transistors.
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Submitted 27 April, 2018;
originally announced April 2018.
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Temperature-induced topological phase transition in HgTe quantum wells
Authors:
A. M. Kadykov,
S. S. Krishtopenko,
B. Jouault,
W. Desrat,
W. Knap,
S. Ruffenach,
C. Consejo,
J. Torres,
S. V. Morozov,
N. N. Mikhailov,
S. A. Dvoretskii,
F. Teppe
Abstract:
We report a direct observation of temperature-induced topological phase transition between trivial and topological insulator in HgTe quantum well. By using a gated Hall bar device, we measure and represent Landau levels in fan charts at different temperatures and we follow the temperature evolution of a peculiar pair of "zero-mode" Landau levels, which split from the edge of electron-like and hole…
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We report a direct observation of temperature-induced topological phase transition between trivial and topological insulator in HgTe quantum well. By using a gated Hall bar device, we measure and represent Landau levels in fan charts at different temperatures and we follow the temperature evolution of a peculiar pair of "zero-mode" Landau levels, which split from the edge of electron-like and hole-like subbands. Their crossing at critical magnetic field $B_c$ is a characteristic of inverted band structure in the quantum well. By measuring the temperature dependence of $B_c$, we directly extract the critical temperature $T_c$, at which the bulk band-gap vanishes and the topological phase transition occurs. Above this critical temperature, the opening of a trivial gap is clearly observed.
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Submitted 26 January, 2018; v1 submitted 18 October, 2017;
originally announced October 2017.
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Temperature-driven single-valley Dirac fermions in HgTe quantum wells
Authors:
M. Marcinkiewicz,
S. Ruffenach,
S. S. Krishtopenko,
A. M. Kadykov,
C. Consejo,
D. B. But,
W. Desrat,
W. Knap,
J. Torres,
A. V. Ikonnikov,
K. E. Spirin,
S. V. Morozov,
V. I. Gavrilenko,
N. N. Mikhailov,
S. A. Dvoretskii,
F. Teppe
Abstract:
We report on temperature-dependent magnetospectroscopy of two HgTe/CdHgTe quantum wells below and above the critical well thickness $d_c$. Our results, obtained in magnetic fields up to 16 T and temperature range from 2 K to 150 K, clearly indicate a change of the band-gap energy with temperature. The quantum well wider than $d_c$ evidences a temperature-driven transition from topological insulato…
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We report on temperature-dependent magnetospectroscopy of two HgTe/CdHgTe quantum wells below and above the critical well thickness $d_c$. Our results, obtained in magnetic fields up to 16 T and temperature range from 2 K to 150 K, clearly indicate a change of the band-gap energy with temperature. The quantum well wider than $d_c$ evidences a temperature-driven transition from topological insulator to semiconductor phases. At the critical temperature of 90 K, the merging of inter- and intra-band transitions in weak magnetic fields clearly specifies the formation of gapless state, revealing the appearance of single-valley massless Dirac fermions with velocity of $5.6\times10^5$ m$\times$s$^{-1}$. For both quantum wells, the energies extracted from experimental data are in good agreement with calculations on the basis of the 8-band Kane Hamiltonian with temperature-dependent parameters.
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Submitted 12 July, 2017; v1 submitted 22 February, 2017;
originally announced February 2017.
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Puddle-induced resistance oscillations in the breakdown of the graphene quantum Hall effect
Authors:
M. Yang,
O. Couturaud,
W. Desrat,
C. Consejo,
D. Kazazis,
R. Yakimova,
M. Syväjärvi,
M. Goiran,
J. Béard,
P. Frings,
M. Pierre,
A. Cresti,
W. Escoffier,
B. Jouault
Abstract:
We report on the stability of the quantum Hall plateau in wide Hall bars made from a chemically gated graphene film grown on SiC. The $ν=2$ quantized plateau appears from fields $B \simeq 5$ T and persists up to $B \simeq 80$ T. At high current density, in the breakdown regime, the longitudinal resistance oscillates with a $1/B$ periodicity and an anomalous phase, which we relate to the presence o…
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We report on the stability of the quantum Hall plateau in wide Hall bars made from a chemically gated graphene film grown on SiC. The $ν=2$ quantized plateau appears from fields $B \simeq 5$ T and persists up to $B \simeq 80$ T. At high current density, in the breakdown regime, the longitudinal resistance oscillates with a $1/B$ periodicity and an anomalous phase, which we relate to the presence of additional electron reservoirs. The high field experimental data suggest that these reservoirs induce a continuous increase of the carrier density up to the highest available magnetic field, thus enlarging the quantum plateaus. These in-plane inhomogeneities, in the form of high carrier density graphene pockets, modulate the quantum Hall effect breakdown and decrease the breakdown current.
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Submitted 24 November, 2016;
originally announced November 2016.
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Temperature-driven massless Kane fermions in HgCdTe crystals: verification of universal velocity and rest-mass description
Authors:
F. Teppe,
M. Marcinkiewicz,
S. S. Krishtopenko,
S. Ruffenach,
C. Consejo,
A. M. Kadykov,
W. Desrat,
D. But,
W. Knap,
J. Ludwig,
S. Moon,
D. Smirnov,
M. Orlita,
Z. Jiang,
S. V. Morozov,
V. I. Gavrilenko,
N. N. Mikhailov,
S. A. Dvoretskii
Abstract:
It has recently been shown that the electronic states in bulk gapless HgCdTe offer another realization of pseudo-relativistic three-dimensional particles in a condensed matter system. These single valley relativistic states, referred to as massless Kane fermions, cannot be described by any other well-known relativistic massless particles. Furthermore, the HgCdTe band structure can be continuously…
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It has recently been shown that the electronic states in bulk gapless HgCdTe offer another realization of pseudo-relativistic three-dimensional particles in a condensed matter system. These single valley relativistic states, referred to as massless Kane fermions, cannot be described by any other well-known relativistic massless particles. Furthermore, the HgCdTe band structure can be continuously tailored by modifying either the cadmium content or temperature. At the critical concentration or temperature, the bandgap, Eg, collapses as the system undergoes a semimetal-to-semiconductor topological phase transition between the inverted and normal alignments. Here, using far-infrared magneto-spectroscopy we explore the continuous evolution of band structure of bulk HgCdTe as temperature is tuned across the topological phase transition. We demonstrate that the rest-mass of the Dirac-like Kane fermions, m changes sign at the critical temperature, while their velocity, c remains constant. The relation Eg = 2mc2 with the universal value of c = (1.07 +- 0.05)10x6 m/s remains valid in a broad range of temperatures and Cd concentrations, indicating a striking universality of the pseudo-relativistic description of the Dirac-like Kane fermions in HgCdTe.
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Submitted 18 February, 2016;
originally announced February 2016.
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Graphene surpasses GaAs/AlGaAs for the application of the quantum Hall effect in metrology
Authors:
R. Ribeiro-Palau,
F. Lafont,
J. Brun-Picard,
D. Kazazis,
A. Michon,
F. Cheynis,
O. Couturaud,
C. Consejo,
B. Jouault,
W. Poirier,
F. Schopfer
Abstract:
The quantum Hall effect (QHE) theoretically provides a universal standard of electrical resistance in terms of the Planck constant $h$ and the electron charge $e$. In graphene, the spacing between the lowest discrete energy levels occupied by the charge carriers under magnetic field is exceptionally large. This is promising for a quantum Hall resistance standard more practical in graphene than in…
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The quantum Hall effect (QHE) theoretically provides a universal standard of electrical resistance in terms of the Planck constant $h$ and the electron charge $e$. In graphene, the spacing between the lowest discrete energy levels occupied by the charge carriers under magnetic field is exceptionally large. This is promising for a quantum Hall resistance standard more practical in graphene than in the GaAs/AlGaAs devices currently used in national metrology institutes. Here, we demonstrate that large QHE devices, made of high quality graphene grown by propane/hydrogen chemical vapour deposition on SiC substrates, can surpass state-of-the-art GaAs/AlGaAs devices by considerable margins in their required operational conditions. In particular, in the device presented here, the Hall resistance is accurately quantized within $1\times 10^{-9}$ over a 10-T wide range of magnetic field with a remarkable lower bound at 3.5 T, temperatures as high as 10 K, or measurement currents as high as 0.5 mA. These significantly enlarged and relaxed operational conditions, with a very convenient compromise of 5 T, 5.1 K and 50 $μ$A, set the superiority of graphene for this application and for the new generation of versatile and user-friendly quantum standards, compatible with a broader industrial use. We also measured an agreement of the quantized Hall resistance in graphene and GaAs/AlGaAs with an ultimate relative uncertainty of $8.2\times 10^{-11}$. This supports the universality of the QHE and its theoretical relation to $h$ and $e$, essential for the application in metrology, particularly in view of the forthcoming Système International d'unités (SI) based on fundamental constants of physics, including the redefinition of the kilogram in terms of $h$.
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Submitted 24 April, 2015;
originally announced April 2015.
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Quantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide
Authors:
F. Lafont,
R. Ribeiro-Palau,
D. Kazazis,
A. Michon,
O. Couturaud,
C. Consejo,
T. Chassagne,
M. Zielinski,
M. Portail,
B. Jouault,
F. Schopfer,
W. Poirier
Abstract:
Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within $10^{-9}$ in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by sublimation of Si, under higher magnetic fields. Here, we report on a device mad…
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Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within $10^{-9}$ in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by sublimation of Si, under higher magnetic fields. Here, we report on a device made of graphene grown by chemical vapour deposition on SiC which demonstrates such accuracies of the Hall resistance from 10 T up to 19 T at 1.4 K. This is explained by a quantum Hall effect with low dissipation, resulting from strongly localized bulk states at the magnetic length scale, over a wide magnetic field range. Our results show that graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range. They rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron density devices.
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Submitted 20 April, 2015; v1 submitted 14 July, 2014;
originally announced July 2014.
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Bottom-gated epitaxial graphene suitable for half-integer quantum metrology ?
Authors:
B. Jouault,
N. Camara,
B. Jabakhanji,
A. Caboni,
C. Consejo,
P. Godignon,
D. K. Maude,
J. Camassel
Abstract:
We demonstrate that the carrier concentration of epitaxial graphene devices grown on the C-face of a SiC substrate is efficiently modulated by a buried gate. The gate is fabricated via the implantation of nitrogen atoms in the SiC crystal, 200 nm below the surface, and works well at intermediate temperatures: 40K-80K. The Dirac point is observed at moderate gate voltages (1-20V) depending upon the…
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We demonstrate that the carrier concentration of epitaxial graphene devices grown on the C-face of a SiC substrate is efficiently modulated by a buried gate. The gate is fabricated via the implantation of nitrogen atoms in the SiC crystal, 200 nm below the surface, and works well at intermediate temperatures: 40K-80K. The Dirac point is observed at moderate gate voltages (1-20V) depending upon the surface preparation. For temperatures below 40K, the gate is inefficient as the buried channel is frozen out. However, the carrier concentration in graphene remains very close to the value set at T\sim 40K. The absence of parallel conduction is evidenced by the observation of the half-integer quantum Hall effect at various concentrations at T\sim 4K. These observations pave the way to a better understanding of intrinsic properties of epitaxial graphene and are promising for applications such as quantum metrology.
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Submitted 13 July, 2011; v1 submitted 29 June, 2011;
originally announced June 2011.
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Interplay between interferences and electron-electron interactions in epitaxial graphene
Authors:
B. Jouault,
B. Jabakhanji,
N. Camara,
W. Desrat,
C. Consejo,
J. Camassel
Abstract:
We separate localization and interaction effects in epitaxial graphene devices grown on the C-face of a 4H-SiC substrate by analyzing the low temperature conductivities. Weak localization and antilocalization are extracted at low magnetic fields, after elimination of a geometric magnetoresistance and subtraction of the magnetic field dependent Drude conductivity. The electron electron interaction…
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We separate localization and interaction effects in epitaxial graphene devices grown on the C-face of a 4H-SiC substrate by analyzing the low temperature conductivities. Weak localization and antilocalization are extracted at low magnetic fields, after elimination of a geometric magnetoresistance and subtraction of the magnetic field dependent Drude conductivity. The electron electron interaction correction is extracted at higher magnetic fields, where localization effects disappear. Both phenomena are weak but sizable and of the same order of magnitude. If compared to graphene on silicon dioxide, electron electron interaction on epitaxial graphene are not significantly reduced by the larger dielectric constant of the SiC substrate.
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Submitted 28 April, 2011; v1 submitted 7 April, 2011;
originally announced April 2011.
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Room Temperature Coherent and Voltage Tunable Terahertz Emission from Nanometer-Sized Field Effect Transistors
Authors:
S. Boubanga-Tombet,
F. Teppe,
J. Torres,
A. El Moutaouakil,
D. Coquillat,
N. Dyakonova,
C. Consejo,
P. Arcade,
P. Nouvel,
H. Marinchio,
T. Laurent,
C. Palermo,
A. Penarier,
T. Otsuji,
L. Varani,
3,
W. Knap
Abstract:
We report on reflective electro-optic sampling measurements of TeraHertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is demonstrated. We establish that the physical mechanism of the coherent TeraHertz emission is related to the plasma waves driven by simultaneous current and optical excitation. A s…
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We report on reflective electro-optic sampling measurements of TeraHertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is demonstrated. We establish that the physical mechanism of the coherent TeraHertz emission is related to the plasma waves driven by simultaneous current and optical excitation. A significant shift of the plasma frequency and the narrowing of the emission with increasing channel's current are observed and explained as due to the increase of the carriers density and drift velocity.
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Submitted 18 November, 2010;
originally announced November 2010.
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Growth of monolayer graphene on 8deg off-axis 4H-SiC (000-1) substrates with application to quantum transport devices
Authors:
N. Camara,
B. Jouault,
A. Caboni,
B. Jabakhanji,
W. Desrat,
E. Pausas,
C. Consejo,
N. Mestres,
P. Godignon,
J. Camassel
Abstract:
Using high temperature annealing conditions with a graphite cap covering the C-face of an 8deg off-axis 4H-SiC sample, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magneto-transport measurements. We find a moderate p-type doping, high carrier…
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Using high temperature annealing conditions with a graphite cap covering the C-face of an 8deg off-axis 4H-SiC sample, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magneto-transport measurements. We find a moderate p-type doping, high carrier mobility and half integer Quantum Hall effect typical of high quality graphene samples. This opens the way to a fully compatible integration of graphene with SiC devices on the wafers that constitute the standard in today's SiC industry.
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Submitted 18 July, 2010;
originally announced July 2010.
