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Graphene Electro-Absorption Modulators for Energy-Efficient and High-Speed Optical Transceivers
Authors:
M. Tiberi,
A. Montanaro,
C. Wen,
J. Zhang,
O. Balci,
S. M. Shinde,
S. Sharma,
A. Meersha,
H. Shekhar,
J. E. Muench,
B. R. Conran,
K. B. K. Teo,
M. Ebert,
X. Yan,
Y. Tran,
M. Banakar,
C. Littlejohns,
G. T. Reed,
M. Romagnoli,
A. Ruocco,
V. Sorianello,
A. C. Ferrari
Abstract:
The increasing demand for energy-efficient hardware for artificial intelligence (AI) and data centres requires integrated photonic solutions delivering optical transceivers with Tbit/s data rates and energy consumption$<$1pJ/bit. Here, we report double single-layer graphene electro-absorption modulators on Si optimized for energy-efficient and ultra-fast operation, demonstrating 67GHz bandwidth an…
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The increasing demand for energy-efficient hardware for artificial intelligence (AI) and data centres requires integrated photonic solutions delivering optical transceivers with Tbit/s data rates and energy consumption$<$1pJ/bit. Here, we report double single-layer graphene electro-absorption modulators on Si optimized for energy-efficient and ultra-fast operation, demonstrating 67GHz bandwidth and 80Gbit/s data rate, in both O and C bands, using a fabrication tailored for wafer-scale integration. We measure a data rate$\sim$1.6 times larger than previously reported for graphene. We scale the modulator's active area down to 22$μ$m$^2$, achieving a dynamic power consumption$\sim$58fJ/bit, $\sim$3 times lower than previous graphene modulators and Mach-Zehnder modulators based on Si or lithium niobate. We show devices with$\sim$0.037dB/V$μ$m modulation efficiency,$\sim$16 times better than previous demonstrations based on graphene. This paves the way to wafer-scale production of graphene modulators on Si useful for Tbit/s optical transceivers and energy-efficient AI
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Submitted 3 June, 2025;
originally announced June 2025.
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Terahertz photodetection in scalable single-layer-graphene and hexagonal boron nitride heterostructures
Authors:
M. Asgari,
L. Viti,
O. Balci,
S. M. Shinde,
J. Zhang,
H. Ramezani,
S. Sharma,
A. Meersha,
G. Menichetti,
C. McAleese,
B. Conran,
X. Wang,
A. Tomadin,
A. C. Ferrari,
M. S. Vitiello
Abstract:
The unique optoelectronic properties of single layer graphene (SLG) are ideal for the development of photonic devices across a broad range of frequencies, from X-rays to microwaves. In the terahertz (THz) range (0.1-10 THz frequency) this has led to the development of optical modulators, non-linear sources, and photodetectors, with state-of-the-art performances. A key challenge is the integration…
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The unique optoelectronic properties of single layer graphene (SLG) are ideal for the development of photonic devices across a broad range of frequencies, from X-rays to microwaves. In the terahertz (THz) range (0.1-10 THz frequency) this has led to the development of optical modulators, non-linear sources, and photodetectors, with state-of-the-art performances. A key challenge is the integration of SLG-based active elements with pre-existing technological platforms in a scalable way, while maintaining performance level unperturbed. Here, we report on the development of room temperature THz detection in large-area SLG, grown by chemical vapor deposition (CVD), integrated in antenna-coupled field effect transistors. We selectively activate the photo-thermoelectric detection dynamics, and we employ different dielectric configurations on SLG on Al2O3 with and without large-area CVD hBN capping to investigate their effect on SLG thermoelectric properties underpinning photodetection. With these scalable architectures, response times ~5ns and noise equivalent powers ~1nWHz-1/2 are achieved under zero-bias operation. This shows the feasibility of scalable, large-area, layered materials heterostructures for THz detection.
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Submitted 28 June, 2022;
originally announced June 2022.
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Light-Matter Coupling in Scalable Van der Waals Superlattices
Authors:
Pawan Kumar,
Jason Lynch,
Baokun Song,
Haonan Ling,
Francisco Barrera,
Huiqin Zhang,
Surendra B. Anantharaman,
Jagrit Digani,
Haoyue Zhu,
Tanushree H. Choudhury,
Clifford McAleese,
Xiaochen Wang,
Ben R. Conran,
Oliver Whear,
Michael J. Motala,
Michael Snure,
Christopher Muratore,
Joan M. Redwing,
Nicholas R. Glavin,
Eric A. Stach,
Artur R. Davoyan,
Deep Jariwala
Abstract:
Two-dimensional (2D) crystals have renewed opportunities in design and assembly of artificial lattices without the constraints of epitaxy. However, the lack of thickness control in exfoliated van der Waals (vdW) layers prevents realization of repeat units with high fidelity. Recent availability of uniform, wafer-scale samples permits engineering of both electronic and optical dispersions in stacks…
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Two-dimensional (2D) crystals have renewed opportunities in design and assembly of artificial lattices without the constraints of epitaxy. However, the lack of thickness control in exfoliated van der Waals (vdW) layers prevents realization of repeat units with high fidelity. Recent availability of uniform, wafer-scale samples permits engineering of both electronic and optical dispersions in stacks of disparate 2D layers with multiple repeating units. We present optical dispersion engineering in a superlattice structure comprised of alternating layers of 2D excitonic chalcogenides and dielectric insulators. By carefully designing the unit cell parameters, we demonstrate > 90 % narrowband absorption in < 4 nm active layer excitonic absorber medium at room temperature, concurrently with enhanced photoluminescence in cm2 samples. These superlattices show evidence of strong light-matter coupling and exciton-polariton formation with geometry-tunable coupling constants. Our results demonstrate proof of concept structures with engineered optical properties and pave the way for a broad class of scalable, designer optical metamaterials from atomically-thin layers.
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Submitted 25 March, 2021;
originally announced March 2021.
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Going beyond copper: wafer-scale synthesis of graphene on sapphire
Authors:
N. Mishra,
S. Forti,
F. Fabbri,
L. Martini,
C. McAleese,
B. Conran,
P. R. Whelan,
A. Shivayogimath,
L. Buß,
J. Falta,
I. Aliaj,
S. Roddaro,
J. I. Flege,
P. Bøggild,
K. B. K. Teo,
C. Coletti
Abstract:
The adoption of graphene in electronics, optoelectronics and photonics is hindered by the difficulty in obtaining high quality material on technologically-relevant substrates, over wafer-scale sizes and with metal contamination levels compatible with industrial requirements. To date, the direct growth of graphene on insulating substrates has proved to be challenging, usually requiring metal-cataly…
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The adoption of graphene in electronics, optoelectronics and photonics is hindered by the difficulty in obtaining high quality material on technologically-relevant substrates, over wafer-scale sizes and with metal contamination levels compatible with industrial requirements. To date, the direct growth of graphene on insulating substrates has proved to be challenging, usually requiring metal-catalysts or yielding defective graphene. In this work, we demonstrate a metal-free approach implemented in commercially available reactors to obtain high-quality monolayer graphene on c-plane sapphire substrates via chemical vapour deposition (CVD). We identify via low energy electron diffraction (LEED), low energy electron microscopy (LEEM) and scanning tunneling microscopy (STM) measurements the Al-rich reconstruction root31R9 of sapphire to be crucial for obtaining epitaxial graphene. Raman spectroscopy and electrical transport measurements reveal high-quality graphene with mobilities consistently above 2000 cm2/Vs. We scale up the process to 4-inch and 6-inch wafer sizes and demonstrate that metal contamination levels are within the limits for back-end-of-line (BEOL) integration. The growth process introduced here establishes a method for the synthesis of wafer-scale graphene films on a technologically viable basis.
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Submitted 2 July, 2019;
originally announced July 2019.
