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Topological surface state dominated nonlinear transverse response and microwave rectification at room temperature
Authors:
Qia Shen,
Jiaxin Chen,
Bin Rong,
Yaqi Rong,
Hongliang Chen,
Tieyang Zhao,
Xianfa Duan,
Dandan Guan,
Shiyong Wang,
Yaoyi Li,
Hao Zheng,
Xiaoxue Liu,
Xuepeng Qiu,
Jingsheng Chen,
Longqing Cong,
Tingxin Li,
Ruidan Zhong,
Canhua Liu,
Yumeng Yang,
Liang Liu,
Jinfeng Jia
Abstract:
Nonlinear Hall effect (NLHE) offers a novel means of uncovering symmetry and topological properties in quantum materials, holding promise for exotic (opto)electronic applications such as microwave rectification and THz detection. The BCD-independent NLHE could exhibit a robust response even at room temperature, which is highly desirable for practical applications. However, in materials with bulk i…
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Nonlinear Hall effect (NLHE) offers a novel means of uncovering symmetry and topological properties in quantum materials, holding promise for exotic (opto)electronic applications such as microwave rectification and THz detection. The BCD-independent NLHE could exhibit a robust response even at room temperature, which is highly desirable for practical applications. However, in materials with bulk inversion symmetry, the coexistence of bulk and surface conducting channels often leads to a suppressed NLHE and complex thickness-dependent behavior. Here, we report the observation of room-temperature nonlinear transverse response in 3D topological insulator Bi2Te3 thin films, whose electrical transport properties are dominated by topological surface state (TSS). By varying the thickness of Bi2Te3 epitaxial films from 7 nm to 50 nm, we found that the nonlinear transverse response increases with thickness from 7 nm to 25 nm and remains almost constant above 25 nm. This is consistent with the thickness-dependent basic transport properties, including conductance, carrier density, and mobility, indicating a pure and robust TSS-dominated linear and nonlinear transport in thick (>25 nm) Bi2Te3 films. The weaker nonlinear transverse response in Bi2Te3 below 25 nm was attributed to Te deficiency and poorer crystallinity. By utilizing the TSS-dominated electrical second harmonic generation, we successfully achieved the microwave rectification from 0.01 to 16.6 GHz in 30 nm and bulk Bi2Te3. Our work demonstrated the room temperature nonlinear transverse response in a paradigm topological insulator, addressing the tunability of the topological second harmonic response by thickness engineering.
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Submitted 29 October, 2024;
originally announced October 2024.
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Spectral continuum in the Rabi-Stark model
Authors:
Daniel Braak,
Lei Cong,
Hans-Peter Eckle,
Henrik Johannesson,
Elinor K. Twyeffort
Abstract:
The Rabi-Stark model is a non-linear generalization of the quantum Rabi model including the dynamical Stark shift as a tunable term, which can be realized via quantum simulation on a cavity QED platform. When the Stark coupling becomes equal to the mode frequency, the spectrum changes drastically, a transition usually termed "spectral collapse" because numerical studies indicate an infinitely dege…
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The Rabi-Stark model is a non-linear generalization of the quantum Rabi model including the dynamical Stark shift as a tunable term, which can be realized via quantum simulation on a cavity QED platform. When the Stark coupling becomes equal to the mode frequency, the spectrum changes drastically, a transition usually termed "spectral collapse" because numerical studies indicate an infinitely degenerate ground state. We show that the spectrum extends continuously from a threshold value up to infinity. A set of normalizable states are embedded in the continuum which furnishes an unexpected analogy to the atomic Stark effect. Bound states and continuum can be obtained analytically through two equally justified, but different confluence processes of the associated differential equation in Bargmann space. Moreover, these results are obtained independently using a method based on adiabatic elimination of the spin degree of freedom and corroborated through large-scale numerical checks.
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Submitted 12 June, 2024; v1 submitted 25 March, 2024;
originally announced March 2024.
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Does P-type Ohmic Contact Exist in WSe2-metal Interfaces?
Authors:
Yangyang Wang,
Ruoxi Yang,
Ruge Quhe,
Hongxia Zhong,
Linxiao Cong,
Meng Ye,
Zeyuan Ni,
Zhigang Song,
Jinbo Yang,
Junjie Shi,
Ju Li,
Jing Lu
Abstract:
Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of 2D WSe2 devices. We present the first comparative study of the interfacial properties between ML/BL WSe2 and Sc, Al, Ag, Au, Pd, and Pt contacts by using ab initio energy band calculations with inclusion of the spin-orbital coupling (SOC) effects and quantum transport s…
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Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of 2D WSe2 devices. We present the first comparative study of the interfacial properties between ML/BL WSe2 and Sc, Al, Ag, Au, Pd, and Pt contacts by using ab initio energy band calculations with inclusion of the spin-orbital coupling (SOC) effects and quantum transport simulations. The interlayer coupling tends to reduce both the electron and hole Schottky barrier heights (SBHs) and alters the polarity for WSe2-Au contact, while the SOC chiefly reduces the hole SBH. In the absence of the SOC, Pd contact has the smallest hole SBH with a value no less than 0.22 eV. Dramatically, Pt contact surpasses Pd contact and becomes p-type Ohmic or quasi-Ohmic contact with inclusion of the SOC. Our study provides a theoretical foundation for the selection of favorable metal electrodes in ML/BL WSe2 devices.
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Submitted 2 August, 2015;
originally announced August 2015.
