-
Edge-Induced Excitations in Bi$_2$Te$_3$ from Spatially-Resolved Electron Energy-Gain Spectroscopy
Authors:
Helena La,
Abel Brokkelkamp,
Stijn van der Lippe,
Jaco ter Hoeve,
Juan Rojo,
Sonia Conesa-Boj
Abstract:
Among the many potential applications of topological insulator materials, their broad potential for the development of novel tunable plasmonics at THz and mid-infrared frequencies for quantum computing, terahertz detectors, and spintronic devices is particularly attractive. The required understanding of the intricate relationship between nanoscale crystal structure and the properties of the result…
▽ More
Among the many potential applications of topological insulator materials, their broad potential for the development of novel tunable plasmonics at THz and mid-infrared frequencies for quantum computing, terahertz detectors, and spintronic devices is particularly attractive. The required understanding of the intricate relationship between nanoscale crystal structure and the properties of the resulting plasmonic resonances remains, however, elusive for these materials. Specifically, edge- and surface-induced plasmonic resonances, and other collective excitations, are often buried beneath the continuum of electronic transitions, making it difficult to isolate and interpret these signals using techniques such as electron energy-loss spectroscopy (EELS). Here we focus on the experimentally clean energy-gain EELS region to characterise collective excitations in the topologically insulating material Bi$_2$Te$_3$ and correlate them with the underlying crystalline structure with nanoscale resolution. We identify with high significance the presence of a distinct energy-gain peak around -0.8 eV, with spatially-resolved maps revealing that its intensity is markedly enhanced at the edge regions of the specimen. Our findings illustrate the reach of energy-gain EELS analyses to accurately map collective excitations in quantum materials, a key asset in the quest towards new tunable plasmonic devices.
△ Less
Submitted 5 May, 2023;
originally announced May 2023.
-
Spatially-Resolved Band Gap and Dielectric Function in 2D Materials from Electron Energy Loss Spectroscopy
Authors:
Abel Brokkelkamp,
Jaco ter Hoeve,
Isabel Postmes,
Sabrya E. van Heijst,
Louis Maduro,
Albert V. Davydov,
Sergiy Krylyuk,
Juan Rojo,
Sonia Conesa-Boj
Abstract:
The electronic properties of two-dimensional (2D) materials depend sensitively on the underlying atomic arrangement down to the monolayer level. Here we present a novel strategy for the determination of the band gap and complex dielectric function in 2D materials achieving a spatial resolution down to a few nanometers. This approach is based on machine learning techniques developed in particle phy…
▽ More
The electronic properties of two-dimensional (2D) materials depend sensitively on the underlying atomic arrangement down to the monolayer level. Here we present a novel strategy for the determination of the band gap and complex dielectric function in 2D materials achieving a spatial resolution down to a few nanometers. This approach is based on machine learning techniques developed in particle physics and makes possible the automated processing and interpretation of spectral images from electron energy-loss spectroscopy (EELS). Individual spectra are classified as a function of the thickness with $K$-means clustering and then used to train a deep-learning model of the zero-loss peak background. As a proof-of-concept we assess the band gap and dielectric function of InSe flakes and polytypic WS$_2$ nanoflowers, and correlate these electrical properties with the local thickness. Our flexible approach is generalizable to other nanostructured materials and to higher-dimensional spectroscopies, and is made available as a new release of the open-source EELSfitter framework.
△ Less
Submitted 25 February, 2022;
originally announced February 2022.
-
Position-dependence of valley polarization and valley coherence of WS2 monolayer flakes
Authors:
Irina Komen,
Sabrya E. van Heijst,
Sonia Conesa-Boj,
L. Kuipers
Abstract:
Chiral interaction between light and two-dimensional transition metal dichalcogenides (2D-TMDs) has recently drawn enormous scientific attention. The optical selection rules of these atomically thin semiconductors allow the attribution of a pseudospin to the TMDs' valleys, which can be coherently manipulated for information processing using polarized light. The interaction of TMDs with circularly…
▽ More
Chiral interaction between light and two-dimensional transition metal dichalcogenides (2D-TMDs) has recently drawn enormous scientific attention. The optical selection rules of these atomically thin semiconductors allow the attribution of a pseudospin to the TMDs' valleys, which can be coherently manipulated for information processing using polarized light. The interaction of TMDs with circularly and linearly polarized light creates the valley polarization and coherence, respectively. With a full Stokes polarization analysis of light emitted from WS2 monolayer flakes, we conclusively confirm the existence of coherence between its valleys. We observe spatial heterogeneity in photoluminescence intensity, valley polarization and valley coherence. The discovery of an inverse proportional relationship between photoluminescence intensity and both valley polarization and coherence, reveals a correlation between the (non-)radiative decay rate and the valley hopping. The temperature dependence confirms the phononic nature of valley depolarization and decoherence, that may be caused by strain and the presence of defects.
△ Less
Submitted 7 June, 2021;
originally announced June 2021.
-
Illuminating the electronic properties of WS$_2$ polytypism with electron microscopy
Authors:
Sabrya E. van Heijst,
Masaki Mukai,
Eiji Okunishi,
Hiroki Hashiguchi,
Laurien I. Roest,
Louis Maduro,
Juan Rojo,
Sonia Conesa-Boj
Abstract:
Tailoring the specific stacking sequences (polytypes) of layered materials represents a powerful strategy to identify and design novel physical properties. While nanostructures built upon transition-metal dichalcogenides (TMDs) with either the 2H or 3R crystalline phases have been routinely studied, our knowledge of those based on mixed 2H/3R polytypes is far more limited. Here we report on the ch…
▽ More
Tailoring the specific stacking sequences (polytypes) of layered materials represents a powerful strategy to identify and design novel physical properties. While nanostructures built upon transition-metal dichalcogenides (TMDs) with either the 2H or 3R crystalline phases have been routinely studied, our knowledge of those based on mixed 2H/3R polytypes is far more limited. Here we report on the characterization of mixed 2H/3R free-standing WS$_2$ nanostructures displaying a flower-like configuration by means of advanced transmission electron microscopy. We correlate their rich variety of shape-morphology combinations with relevant local electronic properties such as their edge, surface, and bulk plasmons. Electron energy-loss spectroscopy combined with machine learning reveals that the 2H/3R polytype displays an indirect band gap with $E_{\rm BG}=1.6^{+0.3}_{-0.2}~{\rm eV}$. Further, we identify the presence of energy-gain peaks in the EEL spectra characterized by a gain-to-loss ratio $I_G/I_L>1$. Such property could be exploited to develop novel cooling strategies for atomically thin TMD nanostructures and devices built upon them. Our results represent a stepping stone towards an improved understanding of TMDs nanostructures based on mixed crystalline phases.
△ Less
Submitted 17 September, 2020;
originally announced September 2020.
-
Charting the low-loss region in Electron Energy Loss Spectroscopy with machine learning
Authors:
Laurien I. Roest,
Sabrya E. van Heijst,
Louis Maduro,
Juan Rojo,
Sonia Conesa-Boj
Abstract:
Exploiting the information provided by electron energy-loss spectroscopy (EELS) requires reliable access to the low-loss region where the zero-loss peak (ZLP) often overwhelms the contributions associated to inelastic scatterings off the specimen. Here we deploy machine learning techniques developed in particle physics to realise a model-independent, multidimensional determination of the ZLP with…
▽ More
Exploiting the information provided by electron energy-loss spectroscopy (EELS) requires reliable access to the low-loss region where the zero-loss peak (ZLP) often overwhelms the contributions associated to inelastic scatterings off the specimen. Here we deploy machine learning techniques developed in particle physics to realise a model-independent, multidimensional determination of the ZLP with a faithful uncertainty estimate. This novel method is then applied to subtract the ZLP for EEL spectra acquired in flower-like WS$_2$ nanostructures characterised by a 2H/3R mixed polytypism. From the resulting subtracted spectra we determine the nature and value of the bandgap of polytypic WS$_2$, finding $E_{\rm BG} = 1.6_{-0.2}^{+0.3}\,{\rm eV}$ with a clear preference for an indirect bandgap. Further, we demonstrate how this method enables us to robustly identify excitonic transitions down to very small energy losses. Our approach has been implemented and made available in an open source Python package dubbed EELSfitter.
△ Less
Submitted 10 September, 2020;
originally announced September 2020.
-
Vertically-oriented MoS$_2$ nanosheets for nonlinear optical devices
Authors:
M. Bolhuis,
J. Hernandez-Rueda,
S. E. van Heijst,
M. Tinoco Rivas,
L. Kuipers,
S. Conesa-Boj
Abstract:
Transition metal dichalcogenides such as MoS$_2$ represent promising candidates for building blocks of ultra-thin nanophotonic devices. For such applications, vertically-oriented MoS$_2$ (v-MoS$_2$) nanosheets could be advantageous as compared to conventional horizontal MoS$_2$ (h-MoS$_2$) given that their inherent broken symmetry would favor an enhanced nonlinear response. However, the current la…
▽ More
Transition metal dichalcogenides such as MoS$_2$ represent promising candidates for building blocks of ultra-thin nanophotonic devices. For such applications, vertically-oriented MoS$_2$ (v-MoS$_2$) nanosheets could be advantageous as compared to conventional horizontal MoS$_2$ (h-MoS$_2$) given that their inherent broken symmetry would favor an enhanced nonlinear response. However, the current lack of a controllable and reproducible fabrication strategy for v-MoS$_2$ limits the exploration of this potential. Here we present a systematic study of the growth of v-MoS$_2$ nanosheets based on the sulfurization of a pre-deposited Mo-metal seed layer. We demonstrate that the sulfurization process at high temperatures is driven by the diffusion of Sulfur from the vapor-solid interface to the Mo seed layer. Furthermore, we verify an enhanced nonlinear response in the resulting v-MoS$_2$ nanostructures as compared to their horizontal counterparts. Our results represent a stepping stone towards the fabrication of low-dimensional TMD-based nanostructures for versatile nonlinear nanophotonic devices.
△ Less
Submitted 28 January, 2020;
originally announced January 2020.
-
Robust fabrication of large-area in- and out-of-plane cross-section samples of layered materials with ultramicrotomy
Authors:
M. O. Cichocka,
M. Bolhuis,
S. E. van Heijst,
S. Conesa-Boj
Abstract:
Layered materials (LMs) such as graphene or MoS$_2$ have recently attracted a great deal of interest. These materials offer unique functionalities due to their structural anisotropy characterized by weak van der Waals bonds along the out-of-plane axis and covalent bonds in the in-plane direction. A central requirement to access the structural information of complex nanostructures built upon LMs is…
▽ More
Layered materials (LMs) such as graphene or MoS$_2$ have recently attracted a great deal of interest. These materials offer unique functionalities due to their structural anisotropy characterized by weak van der Waals bonds along the out-of-plane axis and covalent bonds in the in-plane direction. A central requirement to access the structural information of complex nanostructures built upon LMs is to control the relative orientation of each sample prior to their inspection e.g. with Transmission Electron Microscopy (TEM). However, developing sample preparation methods that result in large inspection areas and ensure full control over the sample orientation while avoiding damage during the transfer to the TEM grid is challenging. Here we demonstrate the feasibility of deploying ultramicrotomy for the preparation of LM samples in TEM analyses. We show how ultramicrotomy leads to the reproducible large-scale production of both in-plane and out-of-plane cross-sections, with bulk vertically-oriented MoS$_2$ and WS$_2$ nanosheets as proof of concept. The robustness of the prepared samples is subsequently verified by their characterization by means of both high-resolution TEM and Raman spectroscopy measurements. Our approach is fully general and should find applications for a wide range of materials as well as of techniques beyond TEM, thus paving the way to the systematic large-area mass-production of cross-sectional specimens for structural and compositional studies.
△ Less
Submitted 11 December, 2019;
originally announced December 2019.
-
Metallic edge states in zig-zag vertically-oriented MoS2 nanowalls
Authors:
Miguel Tinoco,
Louis Maduro,
Sonia Conesa-Boj
Abstract:
The remarkable properties of layered materials such as MoS2 strongly depend on their dimensionality. Beyond manipulating their dimensions, it has been predicted that the electronic properties of MoS2 can also be tailored by carefully selecting the type of edge sites exposed. However, achieving full control over the type of exposed edge sites while simultaneously modifying the dimensionality of the…
▽ More
The remarkable properties of layered materials such as MoS2 strongly depend on their dimensionality. Beyond manipulating their dimensions, it has been predicted that the electronic properties of MoS2 can also be tailored by carefully selecting the type of edge sites exposed. However, achieving full control over the type of exposed edge sites while simultaneously modifying the dimensionality of the nanostructures is highly challenging. Here we adopt a topdown approach based on focus ion beam in order to selectively pattern the exposed edge sites. This strategy allows us to select either the armchair (AC) or the zig-zag (ZZ) edges in the MoS2 nanostructures, as confirmed by high-resolution transmission electron microscopy measurements. The edge-type dependence of the local electronic properties in these MoS2 nanostructures is studied by means of electron energy-loss spectroscopy measurements. This way, we demonstrate that the ZZ-MoS2 nanostructures exhibit clear fingerprints of their predicted metallic character. Our results pave the way towards novel approaches for the design and fabrication of more complex nanostructures based on MoS2 and related layered materials for applications in fields such as electronics, optoelectronics, photovoltaics, and photocatalysts.
△ Less
Submitted 8 June, 2019;
originally announced June 2019.
-
Ballistic superconductivity in semiconductor nanowires
Authors:
Hao Zhang,
Önder Gül,
Sonia Conesa-Boj,
Michał P. Nowak,
Michael Wimmer,
Kun Zuo,
Vincent Mourik,
Folkert K. de Vries,
Jasper van Veen,
Michiel W. A. de Moor,
Jouri D. S. Bommer,
David J. van Woerkom,
Diana Car,
Sébastien R. Plissard,
Erik P. A. M. Bakkers,
Marina Quintero-Pérez,
Maja C. Cassidy,
Sebastian Koelling,
Srijit Goswami,
Kenji Watanabe,
Takashi Taniguchi,
Leo P. Kouwenhoven
Abstract:
Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brou…
▽ More
Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brought semiconductor nanowires to the forefront of efforts to realize topological superconductivity and Majorana modes. A prime challenge to benefit from the topological properties of Majoranas is to reduce the disorder in hybrid nanowire devices. Here, we show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor which enables ballistic transport. This is manifested by a quantized conductance for normal carriers, a strongly enhanced conductance for Andreev-reflecting carriers, and an induced hard gap with a significantly reduced density of states. These results pave the way for disorder-free Majorana devices.
△ Less
Submitted 10 July, 2017;
originally announced July 2017.
-
Observation of Conductance Quantization in InSb Nanowire Networks
Authors:
Elham M. T. Fadaly,
Hao Zhang,
Sonia Conesa-Boj,
Diana Car,
Önder Gül,
Sébastien R. Plissard,
Roy L. M. Op het Veld,
Sebastian Kölling,
Leo P. Kouwenhoven,
Erik P. A. M. Bakkers
Abstract:
Majorana Zero Modes (MZMs) are prime candidates for robust topological quantum bits, holding a great promise for quantum computing. Semiconducting nanowires with strong spin orbit coupling offers a promising platform to harness one-dimensional electron transport for Majorana physics. Demonstrating the topological nature of MZMs relies on braiding, accomplished by moving MZMs around each other in a…
▽ More
Majorana Zero Modes (MZMs) are prime candidates for robust topological quantum bits, holding a great promise for quantum computing. Semiconducting nanowires with strong spin orbit coupling offers a promising platform to harness one-dimensional electron transport for Majorana physics. Demonstrating the topological nature of MZMs relies on braiding, accomplished by moving MZMs around each other in a certain sequence. Most of the proposed Majorana braiding circuits require nanowire networks with minimal disorder. Here, the electronic transport across a junction between two merged InSb nanowires is studied to investigate how disordered these nanowire networks are. Conductance quantization plateaus are observed in all contact pairs of the epitaxial InSb nanowire networks; the hallmark of ballistic transport behavior.
△ Less
Submitted 12 July, 2021; v1 submitted 15 March, 2017;
originally announced March 2017.
-
Hard superconducting gap in InSb nanowires
Authors:
Önder Gül,
Hao Zhang,
Folkert K. de Vries,
Jasper van Veen,
Kun Zuo,
Vincent Mourik,
Sonia Conesa-Boj,
Michał P. Nowak,
David J. van Woerkom,
Marina Quintero-Pérez,
Maja C. Cassidy,
Attila Geresdi,
Sebastian Koelling,
Diana Car,
Sébastien R. Plissard,
Erik P. A. M. Bakkers,
Leo P. Kouwenhoven
Abstract:
Topological superconductivity is a state of matter that can host Majorana modes, the building blocks of a topological quantum computer. Many experimental platforms predicted to show such a topological state rely on proximity-induced superconductivity. However, accessing the topological properties requires an induced hard superconducting gap, which is challenging to achieve for most material system…
▽ More
Topological superconductivity is a state of matter that can host Majorana modes, the building blocks of a topological quantum computer. Many experimental platforms predicted to show such a topological state rely on proximity-induced superconductivity. However, accessing the topological properties requires an induced hard superconducting gap, which is challenging to achieve for most material systems. We have systematically studied how the interface between an InSb semiconductor nanowire and a NbTiN superconductor affects the induced superconducting properties. Step by step, we improve the homogeneity of the interface while ensuring a barrier-free electrical contact to the superconductor, and obtain a hard gap in the InSb nanowire. The magnetic field stability of NbTiN allows the InSb nanowire to maintain a hard gap and a supercurrent in the presence of magnetic fields (~ 0.5 Tesla), a requirement for topological superconductivity in one-dimensional systems. Our study provides a guideline to induce superconductivity in various experimental platforms such as semiconductor nanowires, two dimensional electron gases and topological insulators, and holds relevance for topological superconductivity and quantum computation.
△ Less
Submitted 12 August, 2024; v1 submitted 8 February, 2017;
originally announced February 2017.
-
InSb Nanowires with Built-In GaxIn1-xSb Tunnel Barriers for Majorana Devices
Authors:
Diana Car,
Sonia Conesa-Boj,
Hao Zhang,
Roy L. M. Op het Veld,
Michiel W. A. de Moor,
Elham M. T. Fadaly,
Önder Gül,
Sebastian Kölling,
Sebastien R. Plissard,
Vigdis Toresen,
Michael T. Wimmer,
Kenji Watanabe,
Takashi Taniguchi,
Leo P. Kouwenhoven,
Erik P. A. M. Bakkers
Abstract:
Majorana zero modes (MZMs), prime candidates for topological quantum bits, are detected as zero bias conductance peaks (ZBPs) in tunneling spectroscopy measurements. Implementation of a narrow and high tunnel barrier in the next generation of Majorana devices can help to achieve the theoretically predicted quantized height of the ZBP. We propose a material-oriented approach to engineer a sharp and…
▽ More
Majorana zero modes (MZMs), prime candidates for topological quantum bits, are detected as zero bias conductance peaks (ZBPs) in tunneling spectroscopy measurements. Implementation of a narrow and high tunnel barrier in the next generation of Majorana devices can help to achieve the theoretically predicted quantized height of the ZBP. We propose a material-oriented approach to engineer a sharp and narrow tunnel barrier by synthesizing a thin axial segment of GaxIn1-xSb within an InSb nanowire. By varying the precursor molar fraction and the growth time, we accurately control the composition and the length of the barriers. The height and the width of the GaxIn1-xSb tunnel barrier are extracted from the Wentzel-Kramers-Brillouin (WKB)-fits to the experimental I-V traces.
△ Less
Submitted 12 July, 2021; v1 submitted 17 November, 2016;
originally announced November 2016.
-
Carrier Confinement in GaN/AlGaN Nanowire Heterostructures for 0 < x <= 1
Authors:
F. Furtmayr,
J. Teubert,
P. Becker,
S. Conesa-Boj,
J. R. Morante,
J. Arbiol,
A. Chernikov,
S. Schäfer,
S. Chatterjee,
M. Eickhoff
Abstract:
The three dimensional carrier confinement in GaN nanodiscs embedded in GaN/AlGaN nanowires and its effect on their photoluminescence properties is analyzed for Al concentrations between x = 0.08 and 1. Structural analysis by high resolution transmission electron microscopy reveals the presence of a lateral AlGaN shell due to a composition dependent lateral growth rate of the barrier material. The…
▽ More
The three dimensional carrier confinement in GaN nanodiscs embedded in GaN/AlGaN nanowires and its effect on their photoluminescence properties is analyzed for Al concentrations between x = 0.08 and 1. Structural analysis by high resolution transmission electron microscopy reveals the presence of a lateral AlGaN shell due to a composition dependent lateral growth rate of the barrier material. The structural properties are used as input parameters for three dimensional numerical simulations of the confinement which show that the presence of the AlGaN shell has to be considered to explain the observed dependence of the emission energy on the Al concentration in the barrier. The simulations reveal that the maximum in the emission energy for x ~ 30% is assigned to the smallest lateral strain gradient and consequently the lowest radial internal electric fields in the nanodiscs. Higher Al-concentrations in the barrier cause high radial electric fields that can overcome the exciton binding energy and result in substantially reduced emission intensities. Effects of polarization-induced axial internal electric fields on the photoluminescence characteristics have been investigated using nanowire samples with nanodisc heights ranging between 1.2 nm and 3.5 nm at different Al concentrations. The influence of the quantum confined Stark effect is significantly reduced compared to GaN/AlGaN quantum well structures which is attributed to the formation of misfit dislocations at the heterointerfaces which weakens the internal electric polarization fields.
△ Less
Submitted 15 September, 2011;
originally announced September 2011.
-
Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures
Authors:
Martin Heiß,
Sonia Conesa-Boj,
Jun Ren,
Hsiang-Han Tseng,
Adam Gali,
Andreas Rudolph,
Emanuele Uccelli,
Francesca Peiro,
Joan Ramon Morante,
Dieter Schuh,
Elisabeth Reiger,
Efthimios Kaxiras,
Jordi Arbiol,
Anna Fontcuberta i Morral
Abstract:
A novel method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are investigated by photoluminescence spectroscopy and transmission electron microscopy. The photoluminescence of wurtzite GaAs is consistent with a band gap of 1.5 eV. In…
▽ More
A novel method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are investigated by photoluminescence spectroscopy and transmission electron microscopy. The photoluminescence of wurtzite GaAs is consistent with a band gap of 1.5 eV. In the polytypic nanowires, it is shown that the regions that are predominantly composed of either zinc-blende or wurtzite phase show photoluminescence emission close to the bulk GaAs band gap, while regions composed of a nonperiodic superlattice of wurtzite and zinc-blende phases exhibit a redshift of the photoluminescence spectra as low as 1.455 eV. The dimensions of the quantum heterostructures are correlated with the light emission, allowing us to determine the band alignment between these two crystalline phases. Our first-principles electronic structure calculations within density functional theory, employing a hybrid-exchange functional, predict band offsets and effective masses in good agreement with experimental results.
△ Less
Submitted 23 November, 2010;
originally announced November 2010.
-
Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: polarization dependence, selection rules and strain effects
Authors:
I. Zardo,
S. Conesa-Boj,
F. Peiro,
J. R. Morante,
J. Arbiol,
E. Uccelli,
G. Abstreiter,
A. Fontcuberta i Morral
Abstract:
Polarization dependent Raman scattering experiments realized on single GaAs nanowires with different percentages of zinc-blende and wurtzite structure are presented. The selection rules for the special case of nanowires are found and discussed. In the case of zinc-blende, the transversal optical mode E1(TO) at 267 cm-1 exhibits the highest intensity when the incident and analyzed polarization ar…
▽ More
Polarization dependent Raman scattering experiments realized on single GaAs nanowires with different percentages of zinc-blende and wurtzite structure are presented. The selection rules for the special case of nanowires are found and discussed. In the case of zinc-blende, the transversal optical mode E1(TO) at 267 cm-1 exhibits the highest intensity when the incident and analyzed polarization are parallel to the nanowire axis. This is a consequence of the nanowire geometry and dielectric mismatch with the environment, and in quite good agreement with the Raman selection rules. We also find a consistent splitting of 1 cm-1 of the E1(TO). The transversal optical mode related to the wurtzite structure, E2H, is measured between 254 and 256 cm-1, depending on the wurtzite content. The azymutal dependence of E2H indicates that the mode is excited with the highest efficiency when the incident and analyzed polarization are perpendicular to the nanowire axis, in agreement with the selection rules. The presence of strain between wurtzite and zinc-blende is analyzed by the relative shift of the E1(TO) and E2H modes. Finally, the influence of the surface roughness in the intensity of the longitudinal optical mode on {110} facets is presented.
△ Less
Submitted 7 December, 2009; v1 submitted 27 October, 2009;
originally announced October 2009.
-
Structural and optical properties of high quality zinc-blende/wurtzite GaAs hetero-nanowires
Authors:
D. Spirkoska,
J. Arbiol,
A. Gustafsson,
S. Conesa-Boj,
F. Glas,
I. Zardo,
M. Heigoldt,
M. H. Gass,
A. L. Bleloch,
S. Estrade,
M. Kaniber,
J. Rossler,
F. Peiro,
J. R. Morante,
L. Samuelson,
G. Abstreiter,
A. Fontcuberta i Morral
Abstract:
The structural and optical properties of 3 different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal phases are observed by transmission electron microscopy in the nanowires. Sharp photoluminescence lines are observed with emission energies tuned from 1.5…
▽ More
The structural and optical properties of 3 different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal phases are observed by transmission electron microscopy in the nanowires. Sharp photoluminescence lines are observed with emission energies tuned from 1.515 eV down to 1.43 eV when the percentage of wurtzite is increased. The downward shift of the emission peaks can be understood by carrier confinement at the interfaces, in quantum wells and in random short period superlattices existent in these nanowires, assuming a staggered band-offset between wurtzite and zinc-blende GaAs. The latter is confirmed also by time resolved measurements. The extremely local nature of these optical transitions is evidenced also by cathodoluminescence measurements. Raman spectroscopy on single wires shows different strain conditions, depending on the wurtzite content which affects also the band alignments. Finally, the occurrence of the two crystallographic phases is discussed in thermodynamic terms.
△ Less
Submitted 9 July, 2009;
originally announced July 2009.
