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Comparison of Short-Range Order in GeSn Grown by Molecular Beam Epitaxy and Chemical Vapor Deposition
Authors:
Shang Liu,
Yunfan Liang,
Haochen Zhao,
Nirosh M. Eldose,
Jin-Hee Bae,
Omar Concepcion,
Xiaochen Jin,
Shunda Chen,
Ilias Bikmukhametov,
Austin Akey,
Cory T. Cline,
Alejandra Cuervo Covian,
Xiaoxin Wang,
Tianshu Li,
Yuping Zeng,
Dan Buca,
Shui-Qing Yu,
Gregory J. Salamo,
Shengbai Zhang,
Jifeng Liu
Abstract:
Atomic short-range order (SRO) in direct-bandgap GeSn for infrared photonics has recently attracted attention due to its notable impact on band structures. However, the SRO in GeSn thin films grown by different methods have hardly been compared. This paper compares SRO in GeSn thin films of similar compositions grown by molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) using atom pr…
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Atomic short-range order (SRO) in direct-bandgap GeSn for infrared photonics has recently attracted attention due to its notable impact on band structures. However, the SRO in GeSn thin films grown by different methods have hardly been compared. This paper compares SRO in GeSn thin films of similar compositions grown by molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) using atom probe tomography. An $\sim$15% stronger preference for Sn-Sn 1$^{st}$ nearest neighbor (1NN) is observed in MBE GeSn than CVD GeSn for both thin film and quantum well samples with Sn composition ranging from 7 to 20%. Interestingly, samples grown by different deposition tools under the same method (either MBE or CVD) showed remarkable consistency in Sn-Sn 1NN SRO, while MBE vs. CVD showed clear differences. Supported by theoretical modeling, we consider that this difference in SRO originates from the impact of surface termination, where MBE surfaces are exposed to ultrahigh vacuum while CVD surfaces are terminated by H to a good extent. This finding not only suggests engineering surface termination or surfactants during the growth as a potential approach to control SRO in GeSn, but also provides insight into the underlying reasons for very different growth temperature between MBE and CVD that directly impact the strain relaxation behavior.
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Submitted 2 July, 2024;
originally announced July 2024.
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Thermal expansion and temperature dependence of Raman modes in epitaxial layers of Ge and Ge$_{1-x}$Sn$_{x}$
Authors:
Agnieszka Anna Corley-Wiciak,
Diana Ryzhak,
Marvin Hartwig Zoellner,
Costanza Lucia Manganelli,
Omar Concepción,
Oliver Skibitzki,
Detlev Grützmacher,
Dan Buca,
Giovanni Capellini,
Davide Spirito
Abstract:
Temperature dependence of vibrational modes in semiconductors depends on lattice thermal expansion and anharmonic phonon-phonon scattering. Evaluating the two contributions from experimental data is not straightforward, especially for epitaxial layers that present mechanical deformation and anisotropic lattice expansion. In this work, a temperature-dependent Raman study in epitaxial Ge and Ge…
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Temperature dependence of vibrational modes in semiconductors depends on lattice thermal expansion and anharmonic phonon-phonon scattering. Evaluating the two contributions from experimental data is not straightforward, especially for epitaxial layers that present mechanical deformation and anisotropic lattice expansion. In this work, a temperature-dependent Raman study in epitaxial Ge and Ge$_{1-x}$Sn$_{x}$ layers is presented. A model is introduced for the Raman mode energy shift as a function of temperature, comprising thermal expansion of the strained lattice and anharmonic corrections. With support of x-ray diffraction, the model is calibrated on experimental data of epitaxial Ge grown on Si and Ge$_{1-x}$Sn$_{x}$ grown on Ge/Si, finding that the main difference between bulk and epitaxial layers is related to the anisotropic lattice expansion. The phonon anharmonicity and other parameters do not depend on dislocation defect density (in the range $7\cdot 10^6$ - $4\cdot 10^8$ cm$^{-2}$) nor on alloy composition in the range 5-14 at.%. The strain-shift coefficient for the main model of Ge and for the Ge-Ge vibrational mode of Ge$_{1-x}$Sn$_{x}$ is weakly dependent on temperature and is around -500 cm$^{-1}$. In Ge$_{1-x}$Sn$_{x}$, the composition-shift coefficient amounts to -100 cm$^{-1}$, independent of temperature and strain.
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Submitted 5 February, 2024;
originally announced February 2024.
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Local Alloy Order in a Ge1-xSnx/Ge Epitaxial Layer
Authors:
Agnieszka Anna Corley-Wiciak,
Shunda Chen,
Omar Concepción,
Marvin Hartwig Zoellner,
Detlev Grützmacher,
Dan Buca,
Tianshu Li,
Giovanni Capellini,
Davide Spirito
Abstract:
The local ordering of atoms in alloys directly has a strong impact on their electronic and optical properties. This is particularly relevant in nonrandom alloys, especially if they are deposited using far from the equilibrium processes, as is the case of epitaxial Ge1-xSnx layers. In this work, we investigate the arrangement of Ge and Sn atoms in optoelectronic grade Ge1-xSnx epitaxial layers feat…
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The local ordering of atoms in alloys directly has a strong impact on their electronic and optical properties. This is particularly relevant in nonrandom alloys, especially if they are deposited using far from the equilibrium processes, as is the case of epitaxial Ge1-xSnx layers. In this work, we investigate the arrangement of Ge and Sn atoms in optoelectronic grade Ge1-xSnx epitaxial layers featuring a Sn content in the 5-14% range by using polarization-dependent Raman spectroscopy and density-functional-theory calculations. The thorough analysis of the polarization-dependent spectra in parallel and perpendicular configuration allowed us to properly tag all the observed vibrational modes, and to shed light on that associated to disorder-assisted Raman transitions. Indeed, with the help of large-scale atomistic simulations, we were able to highlight how the presence of Sn atoms, that modify the local environments of Ge atoms, gives rise to two spectral features at different Raman shifts, corresponding to distortions of the atomic bonds. This analysis provides a valuable framework for advancing the understanding of the vibrational properties in Ge1-xSnx alloys, particularly with regard to the impact of local ordering of the different atomic species.
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Submitted 11 August, 2023; v1 submitted 10 May, 2023;
originally announced May 2023.
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Interfacial strain defines the self-organization of epitaxial MoO2 flakes and porous films on sapphire: experiments and modelling
Authors:
O. de Melo,
V. Torres_Costa,
Y. Gonzalez,
A. Ruediger,
C. de Melo,
J. Ghanbaja,
D. Horwat,
A. Escobosa,
O. Concepcion,
G. Santana,
E. Ramos
Abstract:
The epitaxy of MoO2 on c_plane sapphire substrates is examined. A theoretical approach, based on density functional theory calculations of the strain energy, allowed to predict the preferred layer/substrate epitaxial relationships. To test the results of these calculations, MoO2/(001) Al2O3 heterostructures were grown using the chemically_driven isothermal close space vapour transport technique. A…
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The epitaxy of MoO2 on c_plane sapphire substrates is examined. A theoretical approach, based on density functional theory calculations of the strain energy, allowed to predict the preferred layer/substrate epitaxial relationships. To test the results of these calculations, MoO2/(001) Al2O3 heterostructures were grown using the chemically_driven isothermal close space vapour transport technique. At the early stages of the growth, two kinds of morphologies were obtained, using the same growth parameters: lying and standing flakes. The composition and morphology, as well as the layer/substrate epitaxial relationships were determined for both kind of morphologies. Experimental epitaxial relationships coincide with those predicted by DFT calculation as the most favourable ones in terms of strain energy. For thicker films, the standing flakes evolve to form an epitaxial porous layer composed by coalesced epitaxial flakes. The interfacial strain between the sapphire substrate and MoO2 enables a self_organization from nanometer to micron scales between separated or coalesced flakes, depending on deposition condition.
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Submitted 20 April, 2021;
originally announced April 2021.
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Chemically driven isothermal closed space vapor transport of MoO$_2$: thin films, flakes and in-situ tellurization
Authors:
O. de Melo,
L. García-Pelayo,
Y. González,
O. Concepción,
M. Manso-Silván,
R. López-Nebreda,
J. L. Pau,
J. C. González,
A. Climent-Font,
V. Torres-Costa
Abstract:
A novel procedure, based in a closed space vapor transport (CSVT) configuration, has been devised to grow films or flakes of pure MoO2 in a reductive atmosphere, at relatively low temperature and using MoO3 as the source. In contrast with conventional CSVT technique, in the proposed method a temperature gradient is not required for the growth to take place, which occurs through an intermediate vol…
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A novel procedure, based in a closed space vapor transport (CSVT) configuration, has been devised to grow films or flakes of pure MoO2 in a reductive atmosphere, at relatively low temperature and using MoO3 as the source. In contrast with conventional CSVT technique, in the proposed method a temperature gradient is not required for the growth to take place, which occurs through an intermediate volatile transport species that is produced in the complex reduction reaction of MoO3. An added value of this simple method is the possibility of transforming the MoO2 into MoTe2, one of the most interesting members of the transition metal dichalcogenide family. This is achieved in a sequential process that includes the growth of Mo oxide and its (in-situ) tellurization in two consecutive steps.
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Submitted 17 September, 2019;
originally announced September 2019.
