Showing 1–2 of 2 results for author: Comfort, E
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Reconfigurable p-n Junction Diodes and the Photovoltaic Effect in Exfoliated MoS2 Films
Authors:
Surajit Sutar,
Pratik Agnihotri,
Everett Comfort,
T. Taniguchi,
K. Watanabe,
Ji Ung Lee
Abstract:
Realizing basic semiconductor devices such as p-n junctions are necessary for developing thin-film and optoelectronic technologies in emerging planar materials such as MoS2. In this work, electrostatic doping by buried gates is used to study the electronic and optoelectronic properties of p-n junctions in exfoliated MoS2 flakes. Creating a controllable doping gradient across the device leads to th…
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Realizing basic semiconductor devices such as p-n junctions are necessary for developing thin-film and optoelectronic technologies in emerging planar materials such as MoS2. In this work, electrostatic doping by buried gates is used to study the electronic and optoelectronic properties of p-n junctions in exfoliated MoS2 flakes. Creating a controllable doping gradient across the device leads to the observation of the photovoltaic effect in monolayer and bilayer MoS2 flakes. For thicker flakes, strong ambipolar conduction enables realization of fully reconfigurable p-n junction diodes with rectifying current-voltage characteristics, and diode ideality factors as low as 1.6. The spectral response of the photovoltaic effect shows signatures of the predicted band gap transitions. For the first excitonic transition, a shift of >4kBT is observed between monolayer and bulk devices, indicating a thickness-dependence of the excitonic coulomb interaction.
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Submitted 21 March, 2014; v1 submitted 22 January, 2014;
originally announced January 2014.
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Insulator, semiclassical oscillations and quantum Hall liquids at low magnetic fields
Authors:
Shun-Tsung Lo,
Yi-Ting Wang,
G Bohra,
E Comfort,
T-Y Lin,
M-G Kang,
G Strasser,
J P Bird,
C F Huang,
Li-Hung Lin,
J C Chen,
C-T Liang
Abstract:
Magneto-transport measurements are performed on two-dimensional GaAs electron systems to probe the quantum Hall (QH) effect at low magnetic fields. Oscillations following the Shubnikov-de Haas (SdH) formula are observed in the transition from the insulator to QH liquid when the observed almost temperature-independent Hall slope indicates insignificant interaction correction. Our study shows that t…
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Magneto-transport measurements are performed on two-dimensional GaAs electron systems to probe the quantum Hall (QH) effect at low magnetic fields. Oscillations following the Shubnikov-de Haas (SdH) formula are observed in the transition from the insulator to QH liquid when the observed almost temperature-independent Hall slope indicates insignificant interaction correction. Our study shows that the existence of SdH oscillations in such a transition can be understood based on the non-interacting model.
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Submitted 12 September, 2012;
originally announced September 2012.
