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Confined polar optical phonons in semiconductor double heterostructures: an improved continuum approach
Authors:
F. Comas,
I. Camps,
N. Studart,
G. E. Marques
Abstract:
Confined polar optical phonons are studied in a semiconductor double heterostructure (SDH) by means of a generalization of a theory developed some years ago and based on a continuous medium model. The treatment considers the coupling of electro-mechanical oscillations and involves dispersive phonons. This approach has provided results beyond the usually applied dielectric continuum models, where…
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Confined polar optical phonons are studied in a semiconductor double heterostructure (SDH) by means of a generalization of a theory developed some years ago and based on a continuous medium model. The treatment considers the coupling of electro-mechanical oscillations and involves dispersive phonons. This approach has provided results beyond the usually applied dielectric continuum models, where just the electric aspect of the oscillations is analyzed. In the previous works on the subject the theory included phonon dispersion within a quadratic (parabolic) approximation, while presently linear contributions were added by a straightforward extension of the fundamental equations. The generalized version of the mentioned theoretical treatment leads to a description of long wavelength polar optical phonons showing a closer agreement with experimental data and with calculations along atomistic models. This is particularly important for systems where the linear contribution to dispersion becomes predominant. We present a systematic derivation of the underlying equations, their solutions for the bulk and SDH cases, providing us a complete description of the dispersive modes and the associated electron-phonon Hamiltonian. The results obtained are applied to the case of a EuS/PbS/EuS quantum-well.
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Submitted 31 October, 2005;
originally announced October 2005.
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Electron-phonon interaction in quantum-dot/quantum-well semiconductor heterostructures
Authors:
F. Comas,
Nelson Studart
Abstract:
Polar optical phonons are studied in the framework of the dielectric continuum approach for a prototypical quantum-dot/quantum-well (QD/QW) heterostructure, including the derivation of the electron-phonon interaction Hamiltonian and a discussion of the effects of this interaction on the electronic energy levels. The particular example of the CdS/HgS QD/QW is addressed and the system is modelled…
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Polar optical phonons are studied in the framework of the dielectric continuum approach for a prototypical quantum-dot/quantum-well (QD/QW) heterostructure, including the derivation of the electron-phonon interaction Hamiltonian and a discussion of the effects of this interaction on the electronic energy levels. The particular example of the CdS/HgS QD/QW is addressed and the system is modelled according to the spherical geometry, considering a core sphere of material "1" surrounded by a spherically concentric layer of material "2", while the whole structure is embedded in a host matrix assumed as an infinite dielectric medium. The strength of the electron-LO phonon coupling is discussed in details and the polaronic corrections to both ground state and excited state electron energy levels are calculated. Interesting results concerning the dependence of polaronic corrections with the QD/QW structure size are analyzed.
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Submitted 5 September, 2003;
originally announced September 2003.
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Interface optical phonons in spheroidal dots: Raman selection rules
Authors:
F. Comas,
C. Trallero-Giner,
Nelson Studart,
G. E. Marques
Abstract:
The contribution of interface phonons to the first order Raman scattering in nanocrystals with non spherical geometry is analyzed. Interface optical phonons in the spheroidal geometry are discussed and the corresponding Frohlich-like electron-phonon interaction is reported in the framework of the dielectric continuum approach. It is shown that the interface phonon modes are strongly dependent on…
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The contribution of interface phonons to the first order Raman scattering in nanocrystals with non spherical geometry is analyzed. Interface optical phonons in the spheroidal geometry are discussed and the corresponding Frohlich-like electron-phonon interaction is reported in the framework of the dielectric continuum approach. It is shown that the interface phonon modes are strongly dependent on the nanocrystal geometry, particularly on the ellipsoid's semi-axis ratio. The new Raman selection rules have revealed that solely interface phonon modes with even angular momentum are allowed to contribute to the first order phonon-assisted scattering of light. On this basis we are able to give an explanation for the observed low frequency shoulders present in the Raman cross-section of several II-VI semiconductor nanostructures.
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Submitted 22 October, 2001;
originally announced October 2001.
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High field transport in strained Si/GeSi double heterostructure: a Fokker-Planck approach
Authors:
F. Comas,
Nelson Studart
Abstract:
We report calculations of high electric field transport for the case of a strained Si/GeSi double heterostructure (DHS) considering transport along the Si channel and by applying the analytical Fokker-Planck approach (FPA), where the process is modeled as drift-diffusion in energy space. We limit ourselves to electronic transport in the conduction band of the strained Si, where an energy shift b…
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We report calculations of high electric field transport for the case of a strained Si/GeSi double heterostructure (DHS) considering transport along the Si channel and by applying the analytical Fokker-Planck approach (FPA), where the process is modeled as drift-diffusion in energy space. We limit ourselves to electronic transport in the conduction band of the strained Si, where an energy shift between the otherwise degenerate six energy valleys characterizes the band alingment in the DHS. Intervalley phonon scatterings are considered while intravalley acoustic phonon scattering is ignored, leading to results valid for high enough temperatures. Our results are compared to previous theoretical works where Monte Carlo simulations were applied. A reasonable agreement between the two approaches is obtained in the high electric field regime.
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Submitted 13 January, 2000;
originally announced January 2000.
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High-field transport properties of bulk Si: A test for the Fokker-Planck approach
Authors:
F. Comas,
Nelson Studart
Abstract:
High electric-field transport parameters are calculated using an analytical Fokker-Planck approach (FPA), where transport is modeled as a drift-diffusion process in energy space. We have applied the theory to the case of Si, taking into account the six intervalley phonons, aiming to test the FPA. The obtained results show a quite reasonable agreement with experimental data and Monte Carlo simula…
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High electric-field transport parameters are calculated using an analytical Fokker-Planck approach (FPA), where transport is modeled as a drift-diffusion process in energy space. We have applied the theory to the case of Si, taking into account the six intervalley phonons, aiming to test the FPA. The obtained results show a quite reasonable agreement with experimental data and Monte Carlo simulations confirming in this case that the FPA works very well for high enough electric fields.
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Submitted 16 September, 1999;
originally announced September 1999.
