Long-lived modulation of plasmonic absorption by ballistic thermal injection
Authors:
John A. Tomko,
Evan L. Runnerstrom,
Yi-Siang Wang,
Joshua R. Nolen,
David H. Olson,
Kyle P. Kelley,
Angela Cleri,
Josh Nordlander,
Joshua D. Caldwell,
Oleg V. Prezhdo,
Jon-Paul Maria,
Patrick E. Hopkins
Abstract:
Energy and charge transfer across metal-semiconductor interfaces are the fundamental driving forces for a broad range of applications, such as computing, energy harvesting, and photodetection. However, the exact roles and physical separation of these two phenomena remains unclear, particularly in plasmonically-excited systems or cases of strong nonequilibrium. We report on a series of ultrafast pl…
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Energy and charge transfer across metal-semiconductor interfaces are the fundamental driving forces for a broad range of applications, such as computing, energy harvesting, and photodetection. However, the exact roles and physical separation of these two phenomena remains unclear, particularly in plasmonically-excited systems or cases of strong nonequilibrium. We report on a series of ultrafast plasmonic measurements that provide a direct measure of electronic distributions, both spatially and temporally, following optical excitation of a metal-semiconductor heterostructure. For the first time, we explicitly show that in cases of strong non-equilibrium, a novel energy transduction mechanism arises at the metal/semiconductor interface. We find that hot electrons in the metal contact transfer their energy to pre-existing electrons in the semiconductor, without transfer of charge. These experimental results findings are well-supported by both rigorous multilayer optical modeling and first-principle, ab initio calculations.
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Submitted 20 May, 2020;
originally announced May 2020.
