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Charge state tuning of spin defects in hexagonal boron nitride
Authors:
Jules Fraunié,
Tristan Clua-Provost,
Sébastien Roux,
Zhao Mu,
Adrien Delpoux,
Grégory Seine,
Delphine Lagarde,
Kenji Watanabe,
Takashi Taniguchi,
Xavier Marie,
Thomas Poirier,
James H. Edgar,
Jeremie Grisolia,
Benjamin Lassagne,
Alain Claverie,
Vincent Jacques,
Cedric Robert
Abstract:
Boron vacancies in hexagonal boron nitride (hBN) are among the most extensively studied optically active spin defects in van der Waals crystals, due to their promising potential to develop two-dimensional (2D) quantum sensors. In this letter, we demonstrate the tunability of the charge state of boron vacancies in ultrathin hBN layers, revealing a transition from the optically active singly negativ…
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Boron vacancies in hexagonal boron nitride (hBN) are among the most extensively studied optically active spin defects in van der Waals crystals, due to their promising potential to develop two-dimensional (2D) quantum sensors. In this letter, we demonstrate the tunability of the charge state of boron vacancies in ultrathin hBN layers, revealing a transition from the optically active singly negatively charged state to the optically inactive doubly negatively charged state when sandwiched between graphene electrodes. Notably, there is a photoluminescence quenching of a few percent upon the application of a bias voltage between the electrodes. Our findings emphasize the critical importance of considering the charge state of optically active defects in 2D materials, while also showing that the negatively charged boron vacancy remains robust against external perpendicular electric fields. This stability makes it a promising candidate for integration into various van der Waals heterostructures.
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Submitted 30 January, 2025;
originally announced January 2025.
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Isotopic control of the boron-vacancy spin defect in hexagonal boron nitride
Authors:
T. Clua-Provost,
A. Durand,
Z. Mu,
T. Rastoin,
J. Fraunié,
E. Janzen,
H. Schutte,
J. H. Edgar,
G. Seine,
A. Claverie,
X. Marie,
C. Robert,
B. Gil,
G. Cassabois,
V. Jacques
Abstract:
We report on electron spin resonance (ESR) spectroscopy of boron-vacancy (V$_\text{B}^-$) centers hosted in isotopically-engineered hexagonal boron nitride (hBN) crystals. We first show that isotopic purification of hBN with $^{15}$N yields a simplified and well-resolved hyperfine structure of V$_\text{B}^-$ centers, while purification with $^{10}$B leads to narrower ESR linewidths. These results…
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We report on electron spin resonance (ESR) spectroscopy of boron-vacancy (V$_\text{B}^-$) centers hosted in isotopically-engineered hexagonal boron nitride (hBN) crystals. We first show that isotopic purification of hBN with $^{15}$N yields a simplified and well-resolved hyperfine structure of V$_\text{B}^-$ centers, while purification with $^{10}$B leads to narrower ESR linewidths. These results establish isotopically-purified h$^{10}$B$^{15}$N crystals as the optimal host material for future use of V$_\text{B}^-$ spin defects in quantum technologies. Capitalizing on these findings, we then demonstrate optically-induced polarization of $^{15}$N nuclei in h$^{10}$B$^{15}$N, whose mechanism relies on electron-nuclear spin mixing in the V$_\text{B}^-$ ground state. This work opens up new prospects for future developments of spin-based quantum sensors and simulators on a two-dimensional material platform.
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Submitted 13 July, 2023;
originally announced July 2023.
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Multi-Dot Floating-Gates for Nonvolatile Semiconductor Memories - Their Ion Beam Synthesis and Morphology
Authors:
T. Müller,
C. Bonafos,
K. -H. Heinig,
M. Tencé,
H. Coffin,
N. Cherkashin,
G. Ben Assayag,
S. Schamm,
G. Zanchi,
C. Colliex,
W. Möller,
A. Claverie
Abstract:
Scalability and performance of current flash memories can be improved substantially by replacing the floating poly-Si gate by a layer of Si dots. This multi-dot layer can be fabricated CMOS-compatibly in very thin gate oxide by ion beam synthesis (IBS). Here, we present both experimental and theoretical studies on IBS of multi-dot layers consisting of Si nanocrystals (NCs). The NCs are produced…
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Scalability and performance of current flash memories can be improved substantially by replacing the floating poly-Si gate by a layer of Si dots. This multi-dot layer can be fabricated CMOS-compatibly in very thin gate oxide by ion beam synthesis (IBS). Here, we present both experimental and theoretical studies on IBS of multi-dot layers consisting of Si nanocrystals (NCs). The NCs are produced by ultra low energy Si ion implantation, which causes a high Si supersaturation in the shallow implantation region. During post-implantation annealing, this supersaturation leads to phase separation of the excess Si from the SiO2. Till now, the study of this phase separation process suffered from the weak Z contrast between Si and SiO2 in Transmission Electron Microscopy (TEM). Here, this imaging problem is resolved by mapping Si plasmon losses with a Scanning Transmission Electron Microscopy equipped with a parallel Electron Energy Loss Spectroscopy system (PEELS-STEM). Additionally, kinetic lattice Monte Carlo simulations of Si phase separation have been performed and compared with the experimental Si plasmon maps. It has been predicted theoretically that the morphology of the multi-dot Si floating-gate changes with increasing ion fluence from isolated, spherical NCs to percolated spinodal Si pattern. These patterns agree remarkably with PEELS-STEM images. However, the predicted fluence for spinodal patterns is lower than the experimental one. Because oxidants of the ambient atmosphere penetrate into the as-implanted SiO2, a substantial fraction of the implanted Si might be lost due to oxidation.
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Submitted 13 July, 2004;
originally announced July 2004.
