Symmetry-breaking and spin-blockage effects on carrier dynamics in single-layer tungsten diselenide
Authors:
Ro-Ya Liu,
Meng-Kai Lin,
Peng Chen,
Takeshi Suzuki,
Pip C. J. Clark,
Nathan K. Lewis,
Cephise Cacho,
Emma Springate,
Chia-Seng Chang,
Kozo Okazaki,
Wendy Flavell,
Iwao Matsuda,
Tai-Chang Chiang
Abstract:
Understanding carrier creation and evolution in materials initiated by pulsed optical excitation is central to developing ultrafast optoelectronics. We demonstrate herein that the dynamic response of a system can be drastically modified when its physical dimension is reduced to the atomic scale, the ultimate limit of device miniaturization. A comparative study of single-layer (SL) tungsten diselen…
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Understanding carrier creation and evolution in materials initiated by pulsed optical excitation is central to developing ultrafast optoelectronics. We demonstrate herein that the dynamic response of a system can be drastically modified when its physical dimension is reduced to the atomic scale, the ultimate limit of device miniaturization. A comparative study of single-layer (SL) tungsten diselenide(WSe2) relative to bulk WSe2 shows substantial differences in the transient response as measured by time- and angle-resolved photoemission spectroscopy (TRARPES). The conduction-band minimum in bulk WSe2, populated by optical pumping, decays promptly. The corresponding decay for SL WSe2 is much slower and exhibits two time constants. The results indicate the presence of two distinct decay channels in the SL that are correlated with the breaking of space inversion symmetry in the two-dimensional limit. This symmetry breaking lifts the spin degeneracy of the bands, which in turn causes the blockage of decay for one spin channel. The stark contrast between the single layer and the bulk illustrates the basic carrier scattering processes operating at different timescales that can be substantially modified by dimensional and symmetry-reduction effects.
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Submitted 22 December, 2019;
originally announced December 2019.
On the Origin of the Two-Dimensional Electron Gas at the CdO (100) Surface
Authors:
Pip C. J. Clark,
Andrew I. Williamson,
Nathan K. Lewis,
Ruben Ahumada-Lazo,
Mathieu Silly,
James J. Mudd,
Chris F. McConville,
Wendy R. Flavell
Abstract:
Synchrotron-radiation angle-resolved and core-level photoemission spectroscopy are used together to investigate the origin of the two-dimensional electron gas on the surface of single crystal CdO (100) films. A reduction in the two-dimensional electron density of the surface state is observed under the synchrotron beam during ARPES, which is shown to be accompanied by a concomitant reduction in th…
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Synchrotron-radiation angle-resolved and core-level photoemission spectroscopy are used together to investigate the origin of the two-dimensional electron gas on the surface of single crystal CdO (100) films. A reduction in the two-dimensional electron density of the surface state is observed under the synchrotron beam during ARPES, which is shown to be accompanied by a concomitant reduction in the surface-adsorbed species (monitored through the O 1s core level signal). This shows that surface adsorbates donate electrons into the surface accumulation layer. When the surface is cleaned, the surface conduction band state empties. A surface doped with atomic H is also studied. Here, interstitial H increases the two-dimensional electron density at the surface. This demonstrates that reversible donor doping is possible. The surface band bending profiles, 2D electron densities, and effective masses are calculated from subband dispersion simulations.
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Submitted 21 September, 2018;
originally announced September 2018.
