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Vortex glass transition and thermal creep in niobium films
Authors:
Sameh M. Altanany,
I. Zajcewa,
T. Zajarniuk,
A. Szewczyk,
Marta Z. Cieplak
Abstract:
The evolution of the vortex glass (VG) phase transition and vortex creep with decreasing film thickness is studied in ultrathin, polycrystalline niobium films, with thickness in the range 7.4 nm to 44 nm, using current-voltage characteristics measurements in perpendicular magnetic field. Standard methods, including scaling laws, allow to identify VG transition in the thickest film, while in thinne…
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The evolution of the vortex glass (VG) phase transition and vortex creep with decreasing film thickness is studied in ultrathin, polycrystalline niobium films, with thickness in the range 7.4 nm to 44 nm, using current-voltage characteristics measurements in perpendicular magnetic field. Standard methods, including scaling laws, allow to identify VG transition in the thickest film, while in thinner films creep produces large uncertainty in the putative VG transition temperature and scaling exponents. Using strong pinning theory we perform analysis of the creep, and extract the dependence of the activation energy for vortex pinning on temperature, magnetic field, and film thickness. This analysis provides more information on vortex dynamics than the standard evaluation of critical current density. The results reveal two distinct regimes of pinning, which we propose to identify with $δl$ or $δT_c$-types of pinning (due to spacial fluctuation of mean free path $l$ or spacial fluctuation of superconducting transition temperature $T_c$, respectively). In the thickest film $δl$ pinning is observed, but with the decrease of film thickness the second pinning regime appears, and becomes dominant in the thinnest film. We link these pinning regimes with the structural disorder due to grain boundaries, which produce charge carrier scattering in the thickest film, but with decreasing film thickness gradually evolve into amorphous inclusions, producing fluctuations in the $T_c$.
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Submitted 29 March, 2024;
originally announced March 2024.
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Orbital-selective Mott phase and spin nematicity in Ni-substituted FeTe$_{0.65}$Se$_{0.35}$ single crystals
Authors:
Marta Z. Cieplak,
I. Zajcewa,
A. Lynnyk,
K. M. Kosyl,
D. J. Gawryluk
Abstract:
The normal state in iron chalcogenides is metallic but highly unusual, with orbital and spin degrees of freedom partially itinerant or localized depending on temperature, leading to many unusual features. In this work, we report on the observations of two of such features, the orbital selective Mott phase (OSMP) and spin nematicity, evidenced in magnetization and magnetotransport [resistivity, Hal…
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The normal state in iron chalcogenides is metallic but highly unusual, with orbital and spin degrees of freedom partially itinerant or localized depending on temperature, leading to many unusual features. In this work, we report on the observations of two of such features, the orbital selective Mott phase (OSMP) and spin nematicity, evidenced in magnetization and magnetotransport [resistivity, Hall effect, anisotropic magnetoresistance (AMR)] of Fe$_{1-y}$Ni$_y$Te$_{0.65}$Se$_{0.35}$ single crystals, with $0 < y < 0.21$. Substitution of Ni dopes crystals with electrons, what eliminates some of the hole pockets from Fermi level, leaving only one, originating from $d_{xy}$ orbital. This leads to electron-dominated conduction at low $T$ for $y \gtrsim 0.06$. However, at high temperatures, $T \gtrsim 125 ÷178$ K, the conduction reverses to hole-dominated. Anomalies in magnetization and resistivity are observed at temperatures which approach high-$T$ boundary of the electron-dominated region. Analysis of these effects suggests a link with the appearance of the $d_{z^2}$ hole pockets at X points of the Brillouin zone in the OSMP phase, facilitated by the localization of $d_{xy}$ orbital, as recently reported by angular resolved photoemission experiments ($\textit{J. Huang et al., Commun. Phys. 5, 29 (2022)}$). The low-$T$ AMR shows mixed 4-fold and 2-fold rotational symmetry of in-plane magnetocrystalline anisotropy, with the 4-fold term the largest at small $y$, and suppressed at intermediate $y$. These results are consistent with the mixed stripe/bicollinear magnetic correlations at small $y$, and suppression of stripe correlations at intermediate $y$, indicating development of spin nematicity with increasing Ni doping, which possibly contributes to the suppression of superconductivity.
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Submitted 4 April, 2024; v1 submitted 28 November, 2022;
originally announced November 2022.
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Thermomagnetic instabilities in Nb films deposited on glass substrates
Authors:
I. Abaloszewa,
M. Z. Cieplak,
A. Abaloszew
Abstract:
In this work, we provide a systematic study of the magnetic field penetration process and avalanche formation in niobium films of different thicknesses deposited on glass substrates. The research was carried out by means of direct visualization of the magnetic flux using magneto-optical imaging. The experimental data were compared with theoretical predictions for the development of thermomagnetic…
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In this work, we provide a systematic study of the magnetic field penetration process and avalanche formation in niobium films of different thicknesses deposited on glass substrates. The research was carried out by means of direct visualization of the magnetic flux using magneto-optical imaging. The experimental data were compared with theoretical predictions for the development of thermomagnetic instabilities in the form of finger or dendritic flux avalanches in thin films. Analysis of the temperature and thickness dependence of threshold magnetic field at which superconductor first becomes unstable, as well as the flux penetration depth corresponding to this field allows the evaluation of the thermal and superconducting parameters of the studied films, such as heat transfer coefficient across the film-substrate boundary, thermal conductivity, critical current density.
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Submitted 26 July, 2022;
originally announced July 2022.
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Properties of YBa$_2$Cu$_3$O$_{7-δ}$ films grown by pulsed laser deposition on CeO$_2$-buffered sapphire
Authors:
I. Abaloszewa,
P. Gierłowski,
A. Abaloszew,
I. Zaytseva,
M. Aleszkiewicz,
Y. Syryanyy,
V. Bezusyy,
A. Malinowski,
M. Z. Cieplak,
M. Jaworski,
M. Konczykowski,
A. Abramowicz,
S. Chromik,
E. Dobrocka
Abstract:
In the present work we study the growth by pulsed laser deposition of YBa$_2$Cu$_3$O$_{7-δ}$ (YBCO) films on the r-cut sapphire substrates. To improve the matching of the lattice parameters between the substrate and the film we use CeO$_{2}$ buffer layer, recrystallized prior to the deposition of YBCO. The optimal thickness and temperature of recrystallization of the buffer layer is first determin…
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In the present work we study the growth by pulsed laser deposition of YBa$_2$Cu$_3$O$_{7-δ}$ (YBCO) films on the r-cut sapphire substrates. To improve the matching of the lattice parameters between the substrate and the film we use CeO$_{2}$ buffer layer, recrystallized prior to the deposition of YBCO. The optimal thickness and temperature of recrystallization of the buffer layer is first determined using atomic force microscopy (AFM) and X-ray diffraction. Next, we use the AFM to examine the dependence of YBCO film roughness on the film thickness, and we study the homogeneity of magnetic flux penetration into the films by magneto-optical imaging. We find that the superconducting critical temperature and critical current density of these films are very similar to those of YBCO films grown on well-matched substrates. It appears that the microstructure of YBCO films is affected by structural defects in the buffer layer as well as variations in oxygen deficiency, which results in high values of critical current density suitable for application.
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Submitted 17 November, 2020;
originally announced November 2020.
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Structural properties and magnetoresistance of La$_{1.952}$Sr$_{0.048}$CuO$_4$ thin films
Authors:
I. Zaytseva,
R. Minikayev,
E. Dobročka,
M. Špankova,
N. Bruyant,
Marta Z. Cieplak
Abstract:
The evolution of the structural and transport properties of underdoped La$_{1.952}$Sr$_{0.048}$CuO$_4$ thin films under compressive epitaxial strain has been studied. The films of different thicknesses $d$ (from 26 nm to 120 nm) were deposited using an insulating target. The onset of superconductivity in the films is observed at temperatures as high as 26 K, while small residual resistance persist…
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The evolution of the structural and transport properties of underdoped La$_{1.952}$Sr$_{0.048}$CuO$_4$ thin films under compressive epitaxial strain has been studied. The films of different thicknesses $d$ (from 26 nm to 120 nm) were deposited using an insulating target. The onset of superconductivity in the films is observed at temperatures as high as 26 K, while small residual resistance persists at low temperatures, indicating that superconductivity is inhomogeneous. The resistance measured under perpendicular magnetic field saturates below about 0.65 K, suggesting a possible existence of nonconventional metallic state. The magnetic-field-tuned superconductor-insulator transition is observed at magnetic field of about 32 T.
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Submitted 17 December, 2019; v1 submitted 10 December, 2019;
originally announced December 2019.
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Upper critical field and superconductor-metal transition in ultrathin niobium films
Authors:
I. Zaytseva,
A. Abaloszew,
B. C. Camargo,
Y. Syryanyy,
Marta Z. Cieplak
Abstract:
Recent studies suggests that in disordered ultrathin films superconducting (SC) state may be intrinsically inhomogeneous. Here we investigate the nature of SC state in ultrathin Nb films, of thickness $d$ ranging from 1.2 nm to 20 nm, which undergo a transition from amorphous to polycrystalline structure at the thickness $d \simeq 3.3$ nm. We show that the properties of SC state are very different…
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Recent studies suggests that in disordered ultrathin films superconducting (SC) state may be intrinsically inhomogeneous. Here we investigate the nature of SC state in ultrathin Nb films, of thickness $d$ ranging from 1.2 nm to 20 nm, which undergo a transition from amorphous to polycrystalline structure at the thickness $d \simeq 3.3$ nm. We show that the properties of SC state are very different in polycrystalline and amorphous films. The upper critical field ($H_{c2}$) is orbitally limited in the first case, and paramagnetically limited in the latter. The magnetic field induced superconductor-metal transition is observed, with the critical field approximately constant or decreasing as a power-law with the film conductance in polycrystalline or amorphous films, respectively. The scaling analysis indicates distinct scaling exponents in these two types of films. Negative contribution of the SC fluctuations to conductivity exists above $H_{c2}$, particularly pronounced in amorphous films, signaling the presence of fluctuating Cooper pairs. These observations suggest the development of local inhomogeneities in the amorphous films, in the form of proximity-coupled SC islands. An usual evolution of SC correlations on cooling is observed in amorphous films, likely related to the effect of quantum fluctuations on the proximity-induced phase coherence.
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Submitted 8 September, 2020; v1 submitted 6 December, 2019;
originally announced December 2019.
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Effect of electron doping in FeTe$_{1-y}$Se$_{y}$ realized by Co and Ni substitution
Authors:
M. Rosmus,
R. Kurleto,
D. J. Gawryluk,
J. Goraus,
M. Z. Cieplak,
P. Starowicz
Abstract:
Angle-resolved photoemission spectroscopy (ARPES) reveals effects of electron doping, which is realized by Co and Ni substitution for Fe in FeTe$_{1-y}$Se$_{y}$ (y$\sim$0.35) superconductor. The data show consistent band shifts as well as expansion and shrinking of electron and hole Fermi surface, respectively. Doping of either element leads to a Lifshitz transition realized as a removal of one or…
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Angle-resolved photoemission spectroscopy (ARPES) reveals effects of electron doping, which is realized by Co and Ni substitution for Fe in FeTe$_{1-y}$Se$_{y}$ (y$\sim$0.35) superconductor. The data show consistent band shifts as well as expansion and shrinking of electron and hole Fermi surface, respectively. Doping of either element leads to a Lifshitz transition realized as a removal of one or two hole pockets. This explains qualitatively a complex behavior of Hall coefficient observed before [Bezusyy, et al., Phys. Rev. B 91, 100502 (2015)], including change of sign with doping, which takes place only below room temperature. Assuming that Ni substitution should deliver twice more electrons to the valence band than Co, it appears that such transfer is slightly more effective in the case of Co. Therefore, charge doping cannot account for much stronger effect of Ni on superconducting and transport properties [Bezusyy, et al., Phys. Rev. B 91, 100502 (2015)]. Although overall band shifts are roughly proportional to the amount of dopant, clear deviations from a rigid band shift scenario are found. The shape of electron pockets becomes elliptical only for Ni doping, effective mass of electron bands increases with doping, strong reduction of effective mass is observed for one of hole bands of the undoped system. The topology of hole and electron pockets for superconducting Fe$_{1.01}$Te$_{0.67}$Se$_{0.33}$ with T$_{c}$=13.6 K indicates a deviation from nesting. Co and Ni doping causes further departure from nesting, which accompanies the reduction of critical temperature.
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Submitted 28 October, 2019;
originally announced October 2019.
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Transition-Metal Substitutions in Iron Chalcogenides
Authors:
V. L. Bezusyy,
D. J. Gawryluk,
A. Malinowski,
Marta Z. Cieplak
Abstract:
The $ab$-plane resistivity and Hall effect are studied in Fe$_{1-y}$M$_y$Te$_{0.65}$Se$_{0.35}$ single crystals doped with two transition metal elements, M = Co or Ni, over a wide doping range, $0 \leq y \leq 0.2$. The superconducting transition temperature, $T_{c}$, reaches zero for Co at $y \simeq 0.14$ and for Ni at $y \simeq 0.032$, while the resistivity at the $T_{c}$ onset increases weakly w…
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The $ab$-plane resistivity and Hall effect are studied in Fe$_{1-y}$M$_y$Te$_{0.65}$Se$_{0.35}$ single crystals doped with two transition metal elements, M = Co or Ni, over a wide doping range, $0 \leq y \leq 0.2$. The superconducting transition temperature, $T_{c}$, reaches zero for Co at $y \simeq 0.14$ and for Ni at $y \simeq 0.032$, while the resistivity at the $T_{c}$ onset increases weakly with Co doping, and strongly with Ni doping. The Hall coefficient $R_H$, positive for $y$ = 0, remains so at high temperatures for all $y$, while it changes sign to negative at low $T$ for $y > 0.135$ (Co) and $y > 0.06$ (Ni). The analysis based on a two band model suggests that at high $T$ residual hole pockets survive the doping, but holes get localized upon the lowering of $T$, so that the effect of the electron doping on the transport becomes evident. The suppression of the $T_c$ by Co impurity is related to electron doping, while in case of the Ni impurity strong electron localization most likely contributes to fast decrease of the $T_c$.
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Submitted 11 December, 2014;
originally announced December 2014.
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Doping effects of Co, Ni, and Cu in FeTe0.65Se0.35 single crystals
Authors:
V. L. Bezusyy,
D. J. Gawryluk,
M. Berkowski,
M. Z. Cieplak
Abstract:
The resistivity, magnetoresistance, and magnetic susceptibility are measured in single crystals of FeTe0.65Se0.35 with Cu, Ni, and Co substitutions for Fe. The crystals are grown by Bridgman's method. The resistivity measurements show that superconductivity disappears with the rate which correlates with the nominal valence of the impurity. From magnetoresistance we evaluate doping effect on the ba…
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The resistivity, magnetoresistance, and magnetic susceptibility are measured in single crystals of FeTe0.65Se0.35 with Cu, Ni, and Co substitutions for Fe. The crystals are grown by Bridgman's method. The resistivity measurements show that superconductivity disappears with the rate which correlates with the nominal valence of the impurity. From magnetoresistance we evaluate doping effect on the basic superconducting parameters, such as upper critical field and coherence length. We find indications that doping leads to two component superconducting behavior, possibly because of local charge depression around impurities.
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Submitted 29 May, 2012;
originally announced May 2012.
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Enhancement of vortex pinning in superconductor/ferromagnet bilayers via angled demagnetization
Authors:
Marta Z. Cieplak,
L. Y. Zhu,
Z. Adamus,
M. Konczykowski,
C. L. Chien
Abstract:
We use local and global magnetometry measurements to study the influence of magnetic domain width w on the domain-induced vortex pinning in superconducting/ferromagnetic bilayers, built of a Nb film and a ferromagnetic Co/Pt multilayer with perpendicular magnetic anisotropy, with an insulating layer to eliminate proximity effect. The quasi-periodic domain patterns with different and systematically…
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We use local and global magnetometry measurements to study the influence of magnetic domain width w on the domain-induced vortex pinning in superconducting/ferromagnetic bilayers, built of a Nb film and a ferromagnetic Co/Pt multilayer with perpendicular magnetic anisotropy, with an insulating layer to eliminate proximity effect. The quasi-periodic domain patterns with different and systematically adjustable width w, as acquired by a special demagnetization procedure, exert tunable vortex pinning on a superconducting layer. The largest enhancement of vortex pinning, by a factor of more than 10, occurs when w ~ 310 nm is close to the magnetic penetration depth.
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Submitted 19 July, 2011;
originally announced July 2011.
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Tunable phase diagram and vortex pinning in a superconductor-ferromagnet bilayer
Authors:
L. Y. Zhu,
Marta Z. Cieplak,
C. L. Chien
Abstract:
We have observed the evolution of phase diagram and vortex pinning using a single ferromagnet/superconductor bilayer of [Co/Pt]8/Nb through a special demagnetization procedure. It induces a continuous and reversible change of the domain width with equal positive/negative domains enabling the observation of the predicted tunable phase diagram. The tunable domain pattern also systematically affects…
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We have observed the evolution of phase diagram and vortex pinning using a single ferromagnet/superconductor bilayer of [Co/Pt]8/Nb through a special demagnetization procedure. It induces a continuous and reversible change of the domain width with equal positive/negative domains enabling the observation of the predicted tunable phase diagram. The tunable domain pattern also systematically affects vortex pinning. We have determined the dependence of the activation energy of vortex pinning on domain width, temperature, and magnetic field.
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Submitted 13 July, 2010;
originally announced July 2010.
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Localization and Interaction Effects in Strongly Underdoped La2-xSrxCuO4
Authors:
Marta Z. Cieplak,
A. Malinowski,
S. Guha,
M. Berkowski
Abstract:
The in-plane magnetoresistance (MR) in La2-xSrxCuO4 films with 0.03 < x < 0.05 has been studied in the temperature range 1.6 K to 100 K, and in magnetic fields up to 14 T, parallel and perpendicular to the CuO2 planes. The behavior of the MR is consistent with a predominant influence of interaction effects at high temperatures, switching gradually to a regime dominated by spin scattering at low…
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The in-plane magnetoresistance (MR) in La2-xSrxCuO4 films with 0.03 < x < 0.05 has been studied in the temperature range 1.6 K to 100 K, and in magnetic fields up to 14 T, parallel and perpendicular to the CuO2 planes. The behavior of the MR is consistent with a predominant influence of interaction effects at high temperatures, switching gradually to a regime dominated by spin scattering at low T. Weak localization effects are absent. A positive orbital MR appears close to the boundary between the antiferromagnetic and the spin-glass phase, suggesting the onset of Maki-Thompson superconducting fluctuations deep inside the insulating phase.
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Submitted 16 March, 2004;
originally announced March 2004.
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Impurity and strain effects on the magnetotransport of La1.85Sr0.15Cu(1-y)Zn(y)O4 films
Authors:
Marta Z. Cieplak,
A. Malinowski,
K. Karpinska,
S. Guha,
A. Krickser,
B. Kim Q. Wu,
C. H. Shang,
M. Berkowski,
P. Lindenfeld
Abstract:
The influence of zinc doping and strain related effects on the normal state transport properties(the resistivity, the Hall angle and the orbital magneto- resistance(OMR) is studied in a series of La1.85Sr0.15Cu(1-y)Zn(y)O4 films with values of y between 0 and 0.12 and various degrees of strain induced by the mismatch between the films and the substrate. The zinc doping affects only the constant…
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The influence of zinc doping and strain related effects on the normal state transport properties(the resistivity, the Hall angle and the orbital magneto- resistance(OMR) is studied in a series of La1.85Sr0.15Cu(1-y)Zn(y)O4 films with values of y between 0 and 0.12 and various degrees of strain induced by the mismatch between the films and the substrate. The zinc doping affects only the constant term in the temperature dependence of cotangent theta but the strain affects both the slope and the constant term, while their ratio remains constant.OMR is decreased by zinc doping but is unaffected by strain. The ratio delta rho/(rho*tan^2 theta) is T-independent but decreases with impurity doping. These results put strong constraints on theories of the normal state of high- temperature superconductors.
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Submitted 23 August, 2001;
originally announced August 2001.
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Magnetotransport in the Normal State of La1.85Sr0.15Cu(1-y)Zn(y)O4 Films
Authors:
A. Malinowski,
Marta Z. Cieplak,
S. Guha,
Q. Wu,
B. Kim,
A. Krickser,
A. Perali,
K. Karpinska,
M. Berkowski,
C. H. Shang,
P. Lindenfeld
Abstract:
We have studied the magnetotransport properties in the normal state for a series of La1.85Sr0.15Cu(1-y)Zn(y)O4 films with values of y, between 0 and 0.12. A variable degree of compressive or tensile strain results from the lattice mismatch between the substrate and the film, and affects the transport properties differently from the influence of the zinc impurities. In particular, the orbital mag…
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We have studied the magnetotransport properties in the normal state for a series of La1.85Sr0.15Cu(1-y)Zn(y)O4 films with values of y, between 0 and 0.12. A variable degree of compressive or tensile strain results from the lattice mismatch between the substrate and the film, and affects the transport properties differently from the influence of the zinc impurities. In particular, the orbital magnetoresistance (OMR) varies with y but is strain-independent. The relations for the resistivity and the Hall angle and the proportionality between the OMR and tan^2 theta are followed about 70 K. We have been able to separate the strain and impurity effects by rewriting the above relations, where each term is strain-independent and depends on y only. We also find that changes in the lattice constants give rise to closely the same fractional changes in other terms of the equation.The OMR is more strongly supressed by the addition of impurities than tan^2 theta. We conclude that the relaxation ratethat governs Hall effect is not the same as for the magnetoresistance. We also suggest a correspondence between the transport properties and the opening of the pseudogap at a temperature which changes when the La-sr ratio changes, but does not change with the addition of the zinc impurities.
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Submitted 23 August, 2001;
originally announced August 2001.
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Metallic nonsuperconducting phase and d-wave superconductivity in Zn-substituted LaSrCuO
Authors:
K. Karpinska,
Marta Z. Cieplak,
S. Guha,
A. Malinowski,
T. Skoskiewicz,
W. Plesiewicz,
M. Berkowski,
B. Boyce,
Thomas R. Lemberger,
P. Lindenfeld
Abstract:
Measurements of the resistivity, magnetoresistance and penetration depth were made on films of LaSrCuO with up to 12 at.% of Zn substituted for the Cu. The results show that the quadratic temperature dependence of the inverse square of the penetration depth, indicative of d-wave superconductivity, is not affected by doping. The suppression of superconductivity leads to a metallic nonsuperconduct…
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Measurements of the resistivity, magnetoresistance and penetration depth were made on films of LaSrCuO with up to 12 at.% of Zn substituted for the Cu. The results show that the quadratic temperature dependence of the inverse square of the penetration depth, indicative of d-wave superconductivity, is not affected by doping. The suppression of superconductivity leads to a metallic nonsuperconducting phase, as expected for a pairing mechanism related to spin fluctuations. The metal-insulator transition occurs in the vicinity of kFl~1, and appears to be disorder-driven, with the carrier concentration unaffected by doping.
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Submitted 23 November, 1999; v1 submitted 10 November, 1999;
originally announced November 1999.
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Two lifetimes and the pseudogap in the orbital magnetoresistance of Zn-substituted La{1.85}Sr{0.15}CuO{4}
Authors:
A. Malinowski,
A. Krickser,
Marta Z. Cieplak,
S. Guha,
K. Karpinska,
M. Berkowski,
P. Lindenfeld
Abstract:
The effect of zinc doping on the anomalous temperature dependence of the magnetoresistance and the Hall effect in the normal state was studied in a series of La{1.85}Sr{0.15}Cu{1-y}Zn{y}O{4} films, with values of y between zero and 0.12. The orbital magnetoresistance at high temperatures is found to be proportional to the square of the tangent of the Hall angle, as predicted by the model of two…
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The effect of zinc doping on the anomalous temperature dependence of the magnetoresistance and the Hall effect in the normal state was studied in a series of La{1.85}Sr{0.15}Cu{1-y}Zn{y}O{4} films, with values of y between zero and 0.12. The orbital magnetoresistance at high temperatures is found to be proportional to the square of the tangent of the Hall angle, as predicted by the model of two relaxation rates, for all Zn-doped specimens, including nonsuperconducting films. The proportionality constant is equal to 13.7+/-0.5 independent of doping. This is very different from the behavior observed in underdoped La{2-x}Sr{x}CuO{4} films where a decrease of x destroys the proportionality. In addition, the behavior of the orbital magnetoresistance at low temperatures is found to be different depending on whether x is changed or y. We suggest that these differences reflect a different evolution of the pseudogap in the two cases.
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Submitted 4 March, 1999;
originally announced March 1999.
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Magnetic-Field Induced Localization in the Normal State of Superconducting La_2-xSr_xCuo_4
Authors:
A. Malinowski,
Marta Z. Cieplak,
A. S. van Steenbergen,
J. A. A. J. Perenboom,
K. Karpinska,
M. Berkowski,
S. Guha,
P. Lindenfeld
Abstract:
Magnetoresistance measurements of highly underdoped superconducting La_{2-x}Sr_xCuO_4 films with $x = 0.051$ and $x = 0.048$, performed in dc magnetic fields up to 20 T and at temperatures down to 40 mK, reveal a magnetic-field induced transition from weak to strong localization in the normal state. The normal-state conductances per CuO_2--plane, measured at different fields in a single specimen…
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Magnetoresistance measurements of highly underdoped superconducting La_{2-x}Sr_xCuO_4 films with $x = 0.051$ and $x = 0.048$, performed in dc magnetic fields up to 20 T and at temperatures down to 40 mK, reveal a magnetic-field induced transition from weak to strong localization in the normal state. The normal-state conductances per CuO_2--plane, measured at different fields in a single specimen, are found to collapse to one curve with the use of a single scaling parameter that is inversely proportional to the localization length. The scaling parameter extrapolates to zero near zero field and possibly at a finite field, suggesting that in the zero-field limit the electronic states may be extended.
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Submitted 14 May, 1997;
originally announced May 1997.
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Orbital Magnetoresistance in the LaSrCuO System
Authors:
F. F. Balakirev,
I. E. Trofimov,
S. Guha,
Marta Z. Cieplak,
P. Lindenfeld
Abstract:
Measurements of resistivity, Hall effect, and magnetoresistance have been made on seven c-axis oriented thin-film specimens of La(2-x)Sr(x)CuO(4) with values of x from 0.048 to 0.275, and one specimen that also contains Nd. The orbital magnetoresistance is found not to be proportional to the square of the tangent of the Hall angle except for values of x near 0.15 above about 80K. For smaller val…
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Measurements of resistivity, Hall effect, and magnetoresistance have been made on seven c-axis oriented thin-film specimens of La(2-x)Sr(x)CuO(4) with values of x from 0.048 to 0.275, and one specimen that also contains Nd. The orbital magnetoresistance is found not to be proportional to the square of the tangent of the Hall angle except for values of x near 0.15 above about 80K. For smaller values of x the temperature dependence of the magnetoresistance is different, but quite similar in the various specimens, in spite of large differences in resistivity, Hall coefficient, and Hall angle.
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Submitted 12 May, 1997;
originally announced May 1997.
