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Magnetic glassy state at low spin state of Co3+ in EuBaCo2O5+δ (δ = 0.47) cobaltite
Authors:
Archana Kumari,
C. Dhanasekhar,
Praveen Chaddah,
D Chandrasekhar Kakarla,
H. D. Yang,
Z. H. Yang,
B. H. Chen,
Y. C. Chung,
A. K. Das
Abstract:
The magnetic glassy state is a fascinating phenomenon, which results from the kinetic arrest of the first order magnetic phase transition. Interesting properties, such as metastable magnetization and nonequilibrium magnetic phases, are naturally developed in the magnetic glassy state. Here, we report magnetic glass property in the low spin state of Co3+ in EuBaCo2O5+δ (δ = 0.47) cobaltite at low t…
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The magnetic glassy state is a fascinating phenomenon, which results from the kinetic arrest of the first order magnetic phase transition. Interesting properties, such as metastable magnetization and nonequilibrium magnetic phases, are naturally developed in the magnetic glassy state. Here, we report magnetic glass property in the low spin state of Co3+ in EuBaCo2O5+δ (δ = 0.47) cobaltite at low temperature (T < 60 K). The measurements of magnetization under the cooling and heating in unequal fields, magnetization relaxation and thermal cycling of magnetization show the kinetic arrest of low magnetization state below 60 K. The kinetically arrested low temperature magnetic phase is further supported through the study of isothermal magnetic entropy, which shows the significant entropy change. The present results will open a new window to search the microscopic relation between the spin state transitions and the kinetic arrest induced magnetic glassy phenomena in complex materials.
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Submitted 8 November, 2019;
originally announced November 2019.
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Is the charge determined via shot noise measurements unique?
Authors:
M. Dolev,
Y. Gross,
Y. C. Chung,
M. Heiblum,
V. Umansky,
D. Mahalu
Abstract:
Charged excitations in the fractional quantum Hall effect are known to carry fractional charges, as theoretically predicted and experimentally verified. Here we report on the dependence of the tunneling quasiparticle charge, as determined via highly sensitive shot noise measurements, on the measurement conditions, in the odd denominators states v=1/3 and v=7/3 and in the even denominator state v=…
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Charged excitations in the fractional quantum Hall effect are known to carry fractional charges, as theoretically predicted and experimentally verified. Here we report on the dependence of the tunneling quasiparticle charge, as determined via highly sensitive shot noise measurements, on the measurement conditions, in the odd denominators states v=1/3 and v=7/3 and in the even denominator state v=5/2. In particular, for very weak backscattering probability and sufficiently small excitation energies (temperature and applied voltage), tunneling charges across a constriction were found to be significantly higher than the theoretically predicted fundamental quasiparticle charges.
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Submitted 9 March, 2010; v1 submitted 16 November, 2009;
originally announced November 2009.
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Electron Bunching in Transport Through Quantum Dots in High Magnetic Field
Authors:
O. Zarchin,
Y. C. Chung,
M. Heiblum,
D. Rohrlich,
V. Umansky
Abstract:
Shot noise measurements provide information on particles' charge and their correlations. We report on shot noise measurements in a ubiquitous quantum dot under a quantized magnetic field. The measured noise at the peaks of a sequence of conductance resonances was some nine times higher than expected; suggesting bunching of electrons as they traverse through the dot. This enhancement might be med…
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Shot noise measurements provide information on particles' charge and their correlations. We report on shot noise measurements in a ubiquitous quantum dot under a quantized magnetic field. The measured noise at the peaks of a sequence of conductance resonances was some nine times higher than expected; suggesting bunching of electrons as they traverse through the dot. This enhancement might be mediated by an additional weakly coupled level to the leads or an excited state. Note that in the absence of magnetic filed no bunching had been observed.
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Submitted 9 January, 2007; v1 submitted 28 July, 2006;
originally announced July 2006.
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Scattering of Bunched Fractionally Charged Quasiparticles
Authors:
Y. C. Chung,
M. Heiblum,
V. Umansky
Abstract:
The charge of fractionally charged quasiparticles, proposed by Laughlin to explain the fractional quantum Hall effect (FQHE), was recently verified by measurements. Charge q=e/3 and e/5 (e is the electron charge), at filling factors nu=1/3 and 2/5, respectively, were measured. Here we report the unexpected bunching of fractional charges, induced by an extremely weak backscattering potential at e…
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The charge of fractionally charged quasiparticles, proposed by Laughlin to explain the fractional quantum Hall effect (FQHE), was recently verified by measurements. Charge q=e/3 and e/5 (e is the electron charge), at filling factors nu=1/3 and 2/5, respectively, were measured. Here we report the unexpected bunching of fractional charges, induced by an extremely weak backscattering potential at exceptionally low electron temperatures (T<10 mK) - deduced from shot noise measurements. Backscattered charges q=nu e, specifically, q=e/3, q=2e/5, and q<3e/7, in the respective filling factors, were measured. For the same settings but at an only slightly higher electron temperature, the measured backscattered charges were q=e/3, q=e/5, and q=e/7. In other words, bunching of backscattered quasiparticles is taking place at sufficiently low temperatures. Moreover, the backscattered current exhibited distinct temperature dependence that was correlated to the backscattered charge and the filling factor. This observation suggests the existence of 'low' and 'high' temperature backscattering states, each with its characteristic charge and characteristic energy.
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Submitted 15 May, 2003; v1 submitted 14 May, 2003;
originally announced May 2003.
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Anomalous Chiral Luttinger Liquid Behavior of Diluted Fractionally Charged Quasiparticles
Authors:
Y. C. Chung,
M. Heiblum,
Y. Oreg,
V. Umansky,
D. Mahalu
Abstract:
Fractionally charged quasiparticles in edge states, are expected to condense to a chiral Luttinger liquid (CLL). We studied their condensation by measuring the conductance and shot noise due to an artificial backscatterer embedded in their path. At sufficiently low temperatures backscattering events were found to be strongly correlated, producing a highly non-linear current-voltage characteristi…
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Fractionally charged quasiparticles in edge states, are expected to condense to a chiral Luttinger liquid (CLL). We studied their condensation by measuring the conductance and shot noise due to an artificial backscatterer embedded in their path. At sufficiently low temperatures backscattering events were found to be strongly correlated, producing a highly non-linear current-voltage characteristic and a non-classical shot noise - both are expected in a CLL. When, however, the impinging beam of quasiparticles was made dilute, either artificially via an additional weak backscatterer or by increasing the temperature, the resultant outgoing noise was classical, indicating the scattering of independent quasiparticles. Here, we study in some detail this surprising crossover from correlated particle behavior to an independent behavior, as function of beam dilution.
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Submitted 27 April, 2003;
originally announced April 2003.
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Bunching of Fractionally-Charged Quasiparticles Tunneling through High Potential Barriers
Authors:
E. Comforti,
Y. C. Chung,
M. Heiblum,
V. Umansky,
D. Mahalu
Abstract:
Shot noise measurements were recently exploited to measure the charge of the quasiparticles in the Fractional Quantum Hall (FQH) regime. For fractional filling factors nu=1/3 and 2/5 of the first Landau level, fractional charges q=e/3 and e/5, respectively, were measured. We investigate here the interaction of e/3 quasiparticles with a strong backscatterer and find unexpected results. When a wea…
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Shot noise measurements were recently exploited to measure the charge of the quasiparticles in the Fractional Quantum Hall (FQH) regime. For fractional filling factors nu=1/3 and 2/5 of the first Landau level, fractional charges q=e/3 and e/5, respectively, were measured. We investigate here the interaction of e/3 quasiparticles with a strong backscatterer and find unexpected results. When a weak backscatterer is introduced in the path of an otherwise noiseless current of quasiparticles, stochastic partitioning of the quasiparticles takes place and shot noise proportional to their charge appears. Specifically, at nu=1/3, noise corresponding to q=e/3 appears. However, the measured charge increases monotonically as backscattering becomes stronger, approaching asymptotically q=e. In other words, only electrons, or alternatively, three bunched quasiparticles, tunnel through high potential barriers when impinged by a noiseless current of quasiparticles. Here we show that such bunching of quasiparticles by a strong backscatterer depends on the average occupation (dilution) of the impinging quasiparticle current. For a very dilute impinging current, bunching ceases altogether and the transferred charge approaches q=e/3. These surprising results prove that a sparse beam of quasiparticles, each with charge e/3, tunnel through high potential barriers, originally thought to be opaque for them.
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Submitted 8 February, 2002;
originally announced February 2002.
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Multiple Scattering of Fractionally-Charged Quasiparticles
Authors:
E. Comforti,
Y. C. Chung,
M. Heiblum,
V. Umansky
Abstract:
We employ shot noise measurements to characterize the effective charge of quasiparticles, at filling factor nu=1/3 of the fractional quantum Hall regime, as they scatter from an array of identical weak backscatterers. Upon scattering, quasiparticles are known to bunch, e.g., only three e/3 charges, or 'electrons' are found to traverse a rather opaque potential barrier. We find here that the effe…
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We employ shot noise measurements to characterize the effective charge of quasiparticles, at filling factor nu=1/3 of the fractional quantum Hall regime, as they scatter from an array of identical weak backscatterers. Upon scattering, quasiparticles are known to bunch, e.g., only three e/3 charges, or 'electrons' are found to traverse a rather opaque potential barrier. We find here that the effective charge scattered by an array of scatterers is determined by the scattering strength of an individual scatterer and not by the combined scattering strength of the array, which can be very small. Moreover, we also rule out intra-edge equilibration of e/3 quasiparticles over length scale of hundreds microns.
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Submitted 19 December, 2001; v1 submitted 19 December, 2001;
originally announced December 2001.
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Vertical transport and electroluminescence in InAs/GaSb/InAs structures: GaSb thickness and hydrostatic pressure studies
Authors:
M. Roberts,
Y. C. Chung,
S. Lyapin,
N. J. Mason,
R. J. Nicholas,
P. C. Klipstein
Abstract:
We have measured the current-voltage (I-V) of type II InAs/GaSb/InAs double heterojunctions (DHETs) with 'GaAs like' interface bonding and GaSb thickness between 0-1200 Å. A negative differential resistance (NDR) is observed for all DHETs with GaSb thickness $>$ 60 Åbelow which a dramatic change in the shape of the I-V and a marked hysteresis is observed. The temperature dependence of the I-V is…
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We have measured the current-voltage (I-V) of type II InAs/GaSb/InAs double heterojunctions (DHETs) with 'GaAs like' interface bonding and GaSb thickness between 0-1200 Å. A negative differential resistance (NDR) is observed for all DHETs with GaSb thickness $>$ 60 Åbelow which a dramatic change in the shape of the I-V and a marked hysteresis is observed. The temperature dependence of the I-V is found to be very strong below this critical GaSb thickness. The I-V characteristics of selected DHETs are also presented under hydrostatic pressures up to 11 kbar. Finally, a mid infra-red electroluminescence is observed at 1 bar with a threshold at the NDR valley bias. The band profile calculations presented in the analysis are markedly different to those given in the literature, and arise due to the positive charge that it is argued will build up in the GaSb layer under bias. We conclude that the dominant conduction mechanism in DHETs is most likely to arise out of an inelastic electron-heavy-hole interaction similar to that observed in single heterojunctions (SHETs) with 'GaAs like' interface bonding, and not out of resonant electron-light-hole tunnelling as proposed by Yu et al. A Zener tunnelling mechanism is shown to contribute to the background current beyond NDR.
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Submitted 26 September, 2001;
originally announced September 2001.