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Carrier-mediated antiferromagnetic interlayer exchange coupling in diluted magnetic semiconductor multilayers Ga$_{1-x}$Mn$_x$As/GaAs:Be
Authors:
J. -H. Chung,
S. J. Chung,
Sanghoon Lee,
B. J. Kirby,
J. A. Borchers,
Y. J. Cho,
X. Liu,
J. K. Furdyna
Abstract:
We use neutron reflectometry to investigate the interlayer exchange coupling between Ga$_{0.97}$Mn$_{0.03}$As ferromagnetic semiconductor layers separated by non-magnetic Be-doped GaAs spacers. Polarized neutron reflectivity measured below the Curie temperature of Ga$_{0.97}$Mn$_{0.03}$As reveals a characteristic splitting at the wave vector corresponding to twice the multilayer period, indicati…
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We use neutron reflectometry to investigate the interlayer exchange coupling between Ga$_{0.97}$Mn$_{0.03}$As ferromagnetic semiconductor layers separated by non-magnetic Be-doped GaAs spacers. Polarized neutron reflectivity measured below the Curie temperature of Ga$_{0.97}$Mn$_{0.03}$As reveals a characteristic splitting at the wave vector corresponding to twice the multilayer period, indicating that the coupling between the ferromagnetic layers are antiferromagnetic (AFM). When the applied field is increased to above the saturation field, this AFM coupling is suppressed. This behavior is not observed when the spacers are undoped, suggesting that the observed AFM coupling is mediated by charge carriers introduced via Be doping. The behavior of magnetization of the multilayers measured by DC magnetometry is consistent with the neutron reflectometry results.
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Submitted 5 September, 2008;
originally announced September 2008.
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Dynamics of Photo-excited Spins in InSb Based Quantum Wells
Authors:
K. Nontapot,
R. N. Kini,
B. Spencer,
G. A. Khodaparast,
N. Goel,
S. J. Chung,
T. D. Mishima,
M. B. Santos
Abstract:
We report time resolved measurements of spin relaxation in doped and undoped InSb quantum wells using degenerate and two-color magneto-optical Kerr effect techniques. We observed that the photo-excited spin dynamics are strongly influenced by laser excitation fluence and the doping profile of the samples. In the low fluence regime, an oscillatory pattern was observed at low temperatures ($\leq$…
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We report time resolved measurements of spin relaxation in doped and undoped InSb quantum wells using degenerate and two-color magneto-optical Kerr effect techniques. We observed that the photo-excited spin dynamics are strongly influenced by laser excitation fluence and the doping profile of the samples. In the low fluence regime, an oscillatory pattern was observed at low temperatures ($\leq$ 77 K) in the samples with an asymmetric doping profile which might be attributed to the quasi-collision-free spin relaxation regime. Our measurements also suggest the influence of the barrier materials (Al$_{x}$In$_{1-x}$Sb) on the spin relaxation in these material systems.
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Submitted 16 July, 2008;
originally announced July 2008.
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Fabrication of GaNxAs1-x Quantum Structures by Focused Ion Beam Patterning
Authors:
K. Alberi,
A. Minor,
M. A. Scarpulla,
S. J. Chung,
D. E. Mars,
K. M. Yu,
W. Walukiewicz,
O. D. Dubon
Abstract:
A novel approach to the fabrication of GaNxAs1-x quantum dots and wires via ion beam patterning is presented. Photomodulated reflectance spectra confirm that N can be released from the As sublattice of an MBE-grown GaNxAs1-x film by amorphization through ion implantation followed by regrowth upon rapid thermal annealing (RTA). Amorphization may be achieved with a focused ion beam (FIB), which is…
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A novel approach to the fabrication of GaNxAs1-x quantum dots and wires via ion beam patterning is presented. Photomodulated reflectance spectra confirm that N can be released from the As sublattice of an MBE-grown GaNxAs1-x film by amorphization through ion implantation followed by regrowth upon rapid thermal annealing (RTA). Amorphization may be achieved with a focused ion beam (FIB), which is used to implant Ga ions in patterned lines such that annealing produces GaAs regions within a GaNxAs1-x film. The profiles of these amorphized lines are dependent upon the dose implanted, and the film reaches a damage threshold during RTA due to excess Ga. By altering the FIB implantation pattern, quantum dots or wires may be fabricated.
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Submitted 2 August, 2004;
originally announced August 2004.
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Spin-polarized reflection of electrons in a two-dimensional electron system
Authors:
Hong Chen,
J. J. Heremans,
J. A. Peters,
J. P. Dulka,
A. O. Govorov,
N. Goel,
S. J. Chung,
M. B. Santos
Abstract:
We present a method to create spin-polarized beams of ballistic electrons in a two-dimensional electron system in the presence of spin-orbit interaction. Scattering of a spin-unpolarized injected beam from a lithographic barrier leads to the creation of two fully spin-polarized side beams, in addition to an unpolarized specularly reflected beam. Experimental magnetotransport data on InSb/InAlSb…
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We present a method to create spin-polarized beams of ballistic electrons in a two-dimensional electron system in the presence of spin-orbit interaction. Scattering of a spin-unpolarized injected beam from a lithographic barrier leads to the creation of two fully spin-polarized side beams, in addition to an unpolarized specularly reflected beam. Experimental magnetotransport data on InSb/InAlSb heterostructures demonstrate the spin-polarized reflection in a mesoscopic geometry, and confirm our theoretical predictions.
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Submitted 27 August, 2003; v1 submitted 27 August, 2003;
originally announced August 2003.
