Showing 1–3 of 3 results for author: Chunder, A
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Space charge limited conduction with exponential trap distribution in reduced graphene oxide sheets
Authors:
Daeha Joung,
A. Chunder,
Lei Zhai,
Saiful I. Khondaker
Abstract:
We elucidate on the low mobility and charge traps of the chemically reduced graphene oxide (RGO) sheets by measuring and analyzing temperature dependent current-voltage characteristics. The RGO sheets were assembled between source and drain electrodes via dielectrophoresis. At low bias voltage the conduction is Ohmic while at high bias voltage and low temperatures the conduction becomes space char…
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We elucidate on the low mobility and charge traps of the chemically reduced graphene oxide (RGO) sheets by measuring and analyzing temperature dependent current-voltage characteristics. The RGO sheets were assembled between source and drain electrodes via dielectrophoresis. At low bias voltage the conduction is Ohmic while at high bias voltage and low temperatures the conduction becomes space charge limited with an exponential distribution of traps. We estimate an average trap density of 1.75x10^16 cm^-3. Quantitative information about charge traps will help develop optimization strategies of passivating defects in order to fabricate high quality solution processed graphene devices.
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Submitted 23 June, 2010;
originally announced June 2010.
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Position dependent photodetector from large area reduced graphene oxide thin films
Authors:
Surajit Ghosh,
Biddut K. Sarker,
Anindarupa Chunder,
Lei Zhai,
Saiful I. Khondaker
Abstract:
We fabricated large area infrared photodetector devices from thin film of chemically reduced graphene oxide (RGO) sheets and studied their photoresponse as a function of laser position. We found that the photocurrent either increases, decreases or remain almost zero depending upon the position of the laser spot with respect to the electrodes. The position sensitive photoresponse is explained by…
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We fabricated large area infrared photodetector devices from thin film of chemically reduced graphene oxide (RGO) sheets and studied their photoresponse as a function of laser position. We found that the photocurrent either increases, decreases or remain almost zero depending upon the position of the laser spot with respect to the electrodes. The position sensitive photoresponse is explained by Schottky barrier modulation at the RGO film-electrode interface. The time response of the photocurrent is dramatically slower than single sheet of graphene possibly due to disorder from the chemically synthesis and interconnecting sheets.
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Submitted 16 February, 2010;
originally announced February 2010.
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High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis
Authors:
Daeha Joung,
A. Chunder,
Lei Zhai,
Saiful I. Khondaker
Abstract:
We demonstrate high yield fabrication of field effect transistors (FET) using chemically reduced graphene oxide (RGO) sheets suspended in water assembled via dielectrophoresis. The two terminal resistances of the devices were improved by an order of magnitude upon mild annealing at 200 0C in Ar/H2 environment for 1 hour. With the application of a backgate voltage, all of the devices showed FET b…
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We demonstrate high yield fabrication of field effect transistors (FET) using chemically reduced graphene oxide (RGO) sheets suspended in water assembled via dielectrophoresis. The two terminal resistances of the devices were improved by an order of magnitude upon mild annealing at 200 0C in Ar/H2 environment for 1 hour. With the application of a backgate voltage, all of the devices showed FET behavior with maximum hole and electron mobilities of 4.0 and 1.5 cm2/Vs respectively. This study shows promise for scaled up fabrication of graphene based nanoelectronic devices.
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Submitted 2 February, 2010; v1 submitted 30 January, 2010;
originally announced February 2010.
