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Synthesis-related nanoscale defects in Mo-based Janus monolayers revealed by cross-correlated AFM and TERS imaging
Authors:
Tianyi Zhang,
Andrey Krayev,
Tilo H. Yang,
Nannan Mao,
Lauren Hoang,
Zhien Wang,
Hongwei Liu,
Yu-Ren Peng,
Yunyue Zhu,
Eleonora Isotta,
Maria E. Kira,
Ariete Righi,
Marcos A. Pimenta,
Yu-Lun Chueh,
Eric Pop,
Andrew J. Mannix,
Jing Kong
Abstract:
Two-dimensional (2D) Janus transition metal dichalcogenides (TMDs) are promising candidates for various applications in non-linear optics, energy harvesting, and catalysis. These materials are usually synthesized via chemical conversion of pristine TMDs. Nanometer-scale characterization of the obtained Janus materials' morphology and local composition is crucial for both the synthesis optimization…
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Two-dimensional (2D) Janus transition metal dichalcogenides (TMDs) are promising candidates for various applications in non-linear optics, energy harvesting, and catalysis. These materials are usually synthesized via chemical conversion of pristine TMDs. Nanometer-scale characterization of the obtained Janus materials' morphology and local composition is crucial for both the synthesis optimization and the future device applications. In this work, we present a cross-correlated atomic force microscopy (AFM) and tip-enhanced Raman spectroscopy (TERS) study of Janus $\mathrm{Mo}_{\mathrm{Se}}^{\mathrm{S}}$ and Janus $\mathrm{Mo}_{\mathrm{S}}^{\mathrm{Se}}$ monolayers synthesized by the hydrogen plasma-assisted chemical conversion of $\mathrm{MoSe}_2$ and $\mathrm{MoS}_2$, respectively. We demonstrate how the choice of the growth substrate and the starting TMD affects the morphology of the resulting Janus material. Furthermore, by employing TERS imaging, we demonstrate the presence of nanoscale islands (~20 nm across) of $\mathrm{MoSe}_2$-$\mathrm{Mo}_{\mathrm{Se}}^{\mathrm{S}}$ ($\mathrm{MoS}_2$-$\mathrm{Mo}_{\mathrm{S}}^{\mathrm{Se}}$) vertical heterostructures originating from the bilayer nanoislands in the precursor monolayer crystals. The understanding of the origins of nanoscale defects in Janus TMDs revealed in our study can help with further optimization of the Janus conversion process towards uniform and wrinkle-/crack-free Janus materials. Moreover, our work shows that cross-correlated AFM and TERS imaging is a powerful and accessible method for studying nanoscale composition and defects in Janus TMD monolayers.
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Submitted 28 March, 2025;
originally announced March 2025.
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Van der Waals device integration beyond the limits of van der Waals forces via adhesive matrix transfer
Authors:
Peter F. Satterthwaite,
Weikun Zhu,
Patricia Jastrzebska-Perfect,
Melbourne Tang,
Hongze Gao,
Hikari Kitadai,
Ang-Yu Lu,
Qishuo Tan,
Shin-Yi Tang,
Yu-Lun Chueh,
Chia-Nung Kuo,
Chin Shan Lue,
Jing Kong,
Xi Ling,
Farnaz Niroui
Abstract:
Pristine van der Waals (vdW) interfaces between two-dimensional (2D) and other materials are core to emerging optical and electronic devices. Their direct fabrication is, however, challenged as the vdW forces are weak and cannot be tuned to accommodate integration of arbitrary layers without solvents, sacrificial-layers or high-temperatures, steps that can introduce damage. To address these limita…
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Pristine van der Waals (vdW) interfaces between two-dimensional (2D) and other materials are core to emerging optical and electronic devices. Their direct fabrication is, however, challenged as the vdW forces are weak and cannot be tuned to accommodate integration of arbitrary layers without solvents, sacrificial-layers or high-temperatures, steps that can introduce damage. To address these limitations, we introduce a single-step 2D material-to-device integration approach in which forces promoting transfer are decoupled from the vdW forces at the interface of interest. We use this adhesive matrix transfer to demonstrate conventionally-forbidden direct integration of diverse 2D materials (MoS2, WSe2, PtS2, GaS) with dielectrics (SiO2, Al2O3), and scalable, aligned heterostructure formation, both foundational to device development. We then demonstrate a single-step integration of monolayer-MoS2 into arrays of transistors. With no exposure to polymers or solvents, clean interfaces and pristine surfaces are preserved, which can be further engineered to demonstrate both n- and p-type behavior. Beyond serving as a platform to probe the intrinsic properties of sensitive nanomaterials without the influence of processing steps, our technique allows efficient formation of unconventional device form-factors, with an example of flexible transistors demonstrated.
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Submitted 12 February, 2023;
originally announced February 2023.
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Quantum Size Effects on the Chemical Sensing Performance of Two-Dimensional Semiconductors
Authors:
Junghyo Nah,
S. Bala Kumar,
Hui Fang,
Yu-Ze Chen,
Elena Plis,
Yu-Lun Chueh,
Sanjay Krishna,
Jing Guo,
Ali Javey
Abstract:
We investigate the role of quantum confinement on the performance of gas sensors based on two-dimensional InAs membranes. Pd-decorated InAs membranes configured as H2 sensors are shown to exhibit strong thickness dependence, with ~100x enhancement in the sensor response as the thickness is reduced from 48 to 8 nm. Through detailed experiments and modeling, the thickness scaling trend is attributed…
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We investigate the role of quantum confinement on the performance of gas sensors based on two-dimensional InAs membranes. Pd-decorated InAs membranes configured as H2 sensors are shown to exhibit strong thickness dependence, with ~100x enhancement in the sensor response as the thickness is reduced from 48 to 8 nm. Through detailed experiments and modeling, the thickness scaling trend is attributed to the quantization of electrons which favorably alters both the position and the transport properties of charge carriers; thus making them more susceptible to surface phenomena.
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Submitted 19 April, 2012;
originally announced April 2012.
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Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors
Authors:
Hyunhyub Ko,
Kuniharu Takei,
Rehan Kapadia,
Steven Chuang,
Hui Fang,
Paul W. Leu,
Kartik Ganapathi,
Elena Plis,
Ha Sul Kim,
Szu-Ying Chen,
Morten Madsen,
Alexandra C. Ford,
Yu-Lun Chueh,
Sanjay Krishna,
Sayeef Salahuddin,
Ali Javey
Abstract:
Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been actively studied, combining the high mobility of III-V semiconductors and the well-established…
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Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been actively studied, combining the high mobility of III-V semiconductors and the well-established, low cost processing of Si technology. This integration, however, presents significant challenges. Conventionally, heteroepitaxial growth of complex multilayers on Si has been explored. Besides complexity, high defect densities and junction leakage currents present limitations in the approach. Motivated by this challenge, here we utilize an epitaxial transfer method for the integration of ultrathin layers of single-crystalline InAs on Si/SiO2 substrates. As a parallel to silicon-on-insulator (SOI) technology14,we use the abbreviation "XOI" to represent our compound semiconductor-on-insulator platform. Through experiments and simulation, the electrical properties of InAs XOI transistors are explored, elucidating the critical role of quantum confinement in the transport properties of ultrathin XOI layers. Importantly, a high quality InAs/dielectric interface is obtained by the use of a novel thermally grown interfacial InAsOx layer (~1 nm thick). The fabricated FETs exhibit an impressive peak transconductance of ~1.6 mS/μm at VDS=0.5V with ON/OFF current ratio of greater than 10,000 and a subthreshold swing of 107-150 mV/decade for a channel length of ~0.5 μm.
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Submitted 4 August, 2011;
originally announced August 2011.
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Diameter-Dependent Electron Mobility of InAs Nanowires
Authors:
Alexandra Ford,
Johnny Ho,
Yu-Lun Chueh,
Yu-Chih Tseng,
Zhiyong Fan,
Jing Guo,
Jeffrey Bokor,
Ali Javey
Abstract:
Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties as a function of nanowire radius. From C-V characterizations, the densities of thermally-activated fixed charges and trap states on the surface of untreated (i.e., without any surface functionalization) nanowires are i…
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Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties as a function of nanowire radius. From C-V characterizations, the densities of thermally-activated fixed charges and trap states on the surface of untreated (i.e., without any surface functionalization) nanowires are investigated while enabling the accurate measurement of the gate oxide capacitance; therefore, leading to the direct assessment of the field-effect mobility for electrons. The field-effect mobility is found to monotonically decrease as the radius is reduced to sub-10 nm, with the low temperature transport data clearly highlighting the drastic impact of the surface roughness scattering on the mobility degradation for miniaturized nanowires. More generally, the approach presented here may serve as a versatile and powerful platform for in-depth characterization of nanoscale, electronic materials.
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Submitted 3 December, 2008;
originally announced December 2008.
