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ZnO Defect Modulation for Efficient Photocatalysis
Authors:
E. N. Epie,
W. K. Chu
Abstract:
We have investigated the combined effect of low-energy self-implantation and thermal annealing on the near-surface defect concentration of ZnO single-crystals. Using ionoluminescence (IL), we demonstrate that a combination of low-energy low-fluence Zn and O ion implantation followed by annealing in Ar increases the near-surface point defect concentration in ZnO by two orders of magnitude. Point de…
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We have investigated the combined effect of low-energy self-implantation and thermal annealing on the near-surface defect concentration of ZnO single-crystals. Using ionoluminescence (IL), we demonstrate that a combination of low-energy low-fluence Zn and O ion implantation followed by annealing in Ar increases the near-surface point defect concentration in ZnO by two orders of magnitude. Point defects are known to increase the surface reactivity of ZnO, thereby improving the efficiency of ZnO photocatalytic processes such as bilirubin degredation. We hereby provide recommendations on how to improve the efficiency of ZnO-related photocatalytic processes.
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Submitted 4 October, 2017;
originally announced October 2017.
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Metastable giant moments in Gd-implanted GaN, Si, and sapphire
Authors:
X. Wang,
C. Timm,
X. M. Wang,
W. K. Chu,
J. Y. Lin,
H. X. Jiang,
J. Z. Wu
Abstract:
We report on Gd ion implantation and magnetic characterization of GaN films on sapphire substrates and of bare sapphire and Si substrates to shed light on the mechanism underlying the induced magnetism upon Gd ion implantation. For all three hosts, giant magnetic moments per Gd ion were observed at temperatures of 5 through 300 K. The maximum moment per Gd in GaN was 1800 mu_B, while the moments i…
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We report on Gd ion implantation and magnetic characterization of GaN films on sapphire substrates and of bare sapphire and Si substrates to shed light on the mechanism underlying the induced magnetism upon Gd ion implantation. For all three hosts, giant magnetic moments per Gd ion were observed at temperatures of 5 through 300 K. The maximum moment per Gd in GaN was 1800 mu_B, while the moments in Gd-implanted Si and sapphire were only slightly smaller. The apparent induced ferromagnetic response was found to be metastable, disappearing after on the order of 50 days at room temperature, except for the implanted sapphire. We argue that our findings support a defect-based picture of magnetism in Gd-implanted semiconductors and insulators.
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Submitted 28 March, 2011;
originally announced March 2011.
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Characterizations of strain and defect free GaN nanorods on Si(111) substrates
Authors:
H. W. Seo,
Q. Y. Chen,
M. N. Iliev,
W. K. Chu,
L. W. Tu,
C. L. Hsiao,
James K. Meen
Abstract:
GaN-nanorods grown on Si(111) substrates are found strain- and defect-free as characterized by micro Raman spectroscopy, secondary electron (SE) and cathode-luminescence (CL) imaging. The matrix supporting the nanorods bears the brunt of all strains, strain-relaxations, and defect generations, giving the nanorods an ideal environment to grow to perfection. Photo-excitations by the Raman laser so…
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GaN-nanorods grown on Si(111) substrates are found strain- and defect-free as characterized by micro Raman spectroscopy, secondary electron (SE) and cathode-luminescence (CL) imaging. The matrix supporting the nanorods bears the brunt of all strains, strain-relaxations, and defect generations, giving the nanorods an ideal environment to grow to perfection. Photo-excitations by the Raman laser source and electron irradiation during CL imaging lead to an increase of non-equilibrium electrons, suggesting an effective approach to photo-emitting or field emitting device applications. The nanorods, largely isolated from but perfectly aligned with the sustaining matrix, are grown in excellent epitaxy with the Si substrates.
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Submitted 8 March, 2005;
originally announced March 2005.
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Epitaxial GaN Nanorods via Catalytic Capillary Condensation
Authors:
H. W. Seo,
Q. Y. Chen,
L. W. Tu,
C. L. Hsiao,
M. N. Iliev,
W. K. Chu
Abstract:
Intrinsic catalytic process by capillary condensation of Ga-atoms into nanotrenches, formed among impinging islands during the wurzite-GaN thin film deposition, is shown to be an effective path to growing GaN nanorods without metal catalysts. The nano-capillary brings within it a huge imbalance in equilibrium partial pressure of Ga relative to the growth ambient. GaN nanorods thus always grow ou…
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Intrinsic catalytic process by capillary condensation of Ga-atoms into nanotrenches, formed among impinging islands during the wurzite-GaN thin film deposition, is shown to be an effective path to growing GaN nanorods without metal catalysts. The nano-capillary brings within it a huge imbalance in equilibrium partial pressure of Ga relative to the growth ambient. GaN nanorods thus always grow out of a holding nanotrench and conform to the boundaries of surrounding islands. The nanorods are epitaxially orientated with <0001>GaN // <111>Si and <2110>GaN // <110>Si similar to the matrix. Concaved geometry is essential and is a condition that limits the axial dimension of the nanorods protruding above the base (matrix) material region. Revelation of the growth mechanism in the current context suggests that fabrication of nano quantum structures with controlled patterns is enabling for any attainable dimensions
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Submitted 8 March, 2005;
originally announced March 2005.
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Under-doped La2-xSrxCuO4 with x = 0.063 - 0.125: TSFZ growth of high-quality crystals and anomalous doping dependences of superconducting properties
Authors:
F Zhou,
W X Ti,
J W Xiong,
Z X Zhao X L Dong,
P H Hor,
Z H Zhang,
W K Chu
Abstract:
A series of high-quality La2-xSrxCuO4 (LSCO) superconductor crystals in the under-doping region with x = 0.063, 0.07, 0.09, 0.10, 0.111 and 0.125 has been successfully prepared by traveling-solvent floating-zone (TSFZ) technique. The crystals are large and free of sub-grains and foreign phases. The high crystal quality has been revealed by double-crystal x-ray rocking curves and Rutherford backs…
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A series of high-quality La2-xSrxCuO4 (LSCO) superconductor crystals in the under-doping region with x = 0.063, 0.07, 0.09, 0.10, 0.111 and 0.125 has been successfully prepared by traveling-solvent floating-zone (TSFZ) technique. The crystals are large and free of sub-grains and foreign phases. The high crystal quality has been revealed by double-crystal x-ray rocking curves and Rutherford backscattering spectrometry combined with ion-beam channeling effect. We find that the evolutions of the superconducting transition width and volume fraction as a function of carrier concentration exhibit interesting anomalies in the vicinity of some magic number doping levels such as x =1/4^2 (=0.0625) and 1/3^2 (=0.111). We argue that these behaviours are of intrinsic electronic origin.
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Submitted 12 December, 2002;
originally announced December 2002.
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Direct Observation of Coexistence of Ferromagnetism and Superconductivity in RuSr2(Gd0.7Ce0.3)2Cu2O10
Authors:
S. Y. Chen,
J. Shulman,
Y. S. Wang,
D. H. Cao,
C. Wang,
Q. Y. Chen,
T. H. Johansen,
W. K. Chu,
C. W. Chu
Abstract:
Recent reports of the detecting of ferromagnetism and superconductivity in ruthenium-cuprates have aroused great interest. Unfortunately, whether the two antagonistic phenomena coexist in the same space in the compounds remains unresolved. By employing the magneto-optical-imaging technique, ferromagnetism and superconductivity were indeed directly observed to coexist in the same space in RuSr2(G…
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Recent reports of the detecting of ferromagnetism and superconductivity in ruthenium-cuprates have aroused great interest. Unfortunately, whether the two antagonistic phenomena coexist in the same space in the compounds remains unresolved. By employing the magneto-optical-imaging technique, ferromagnetism and superconductivity were indeed directly observed to coexist in the same space in RuSr2(Gd0.7Ce0.3)2Cu2O10 within the experimental resolution of ~ 10 (mu)m. The observation sets a length scale limit for models proposed to account for the competition between ferromagnetism and superconductivity, especially d-wave superconductivity, in this interesting class of compounds.
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Submitted 26 May, 2001;
originally announced May 2001.
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Triple sign reversal of Hall effect in HgBa_{2}CaCu_{2}O_{6} thin films after heavy-ion irradiations
Authors:
W. N. Kang,
B. W. Kang,
Q. Y. Chen,
J. Z. Wu,
Y. Bai,
W. K. Chu,
D. K. Christen,
R. Kerchner,
Sung-Ik Lee
Abstract:
Triple sign reversal in the mixed-state Hall effect has been observed for the first time in ion-irradiated HgBa_{2}CaCu_{2}O_{6} thin films. The negative dip at the third sign reversal is more pronounced for higher fields, which is opposite to the case of the first sign reversal near T_c in most high-T_c superconductors. These observations can be explained by a recent prediction in which the thi…
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Triple sign reversal in the mixed-state Hall effect has been observed for the first time in ion-irradiated HgBa_{2}CaCu_{2}O_{6} thin films. The negative dip at the third sign reversal is more pronounced for higher fields, which is opposite to the case of the first sign reversal near T_c in most high-T_c superconductors. These observations can be explained by a recent prediction in which the third sign reversal is attributed to the energy derivative of the density of states and to a temperature-dependent function related to the superconducting energy gap. These contributions prominently appear in cases where the mean free path is significantly decreased, such as our case of ion-irradiated thin films.
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Submitted 30 March, 1999;
originally announced March 1999.
