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Multilayer epitaxial graphene formed by pyrolysis of polycrystalline silicon-carbide grown on c-plane sapphire substrates
Authors:
Timothy J. McArdle,
Jack O. Chu,
Yu Zhu,
Zihong Liu,
Mahadevaiyer Krishnan,
Christopher M. Breslin,
Christos Dimitrakopoulos,
Robert Wisnieff,
Alfred Grill
Abstract:
We use ultra-high vacuum chemical vapor deposition to grow polycrystalline silicon carbide (SiC) on c-plane sapphire wafers which are then annealed between 1250 and 1450°C in vacuum to create epitaxial multilayer graphene (MLG). Despite the surface roughness and small domain size of the polycrystalline SiC, a conformal MLG film is formed. By planarizing the SiC prior to graphene growth, a reductio…
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We use ultra-high vacuum chemical vapor deposition to grow polycrystalline silicon carbide (SiC) on c-plane sapphire wafers which are then annealed between 1250 and 1450°C in vacuum to create epitaxial multilayer graphene (MLG). Despite the surface roughness and small domain size of the polycrystalline SiC, a conformal MLG film is formed. By planarizing the SiC prior to graphene growth, a reduction of the Raman defect band is observed in the final MLG. The graphene formed on polished SiC films also demonstrates significantly more ordered layer-by-layer growth and increased carrier mobility for the same carrier density as the non-polished samples.
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Submitted 31 March, 2011;
originally announced March 2011.
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Controllable valley splitting in silicon quantum devices
Authors:
Srijit Goswami,
K. A. Slinker,
Mark Friesen,
L. M. McGuire,
J. L. Truitt,
Charles Tahan,
L. J. Klein,
J. O. Chu,
P. M. Mooney,
D. W. van der Weide,
Robert Joynt,
S. N. Coppersmith,
Mark A. Eriksson
Abstract:
Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple valleys in the silicon conduction band are potentially a serious source of decoherence for spin-based quantum dot qubits. Only when these valleys are split by a large energy does one obtain well-defined and long-lived sp…
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Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple valleys in the silicon conduction band are potentially a serious source of decoherence for spin-based quantum dot qubits. Only when these valleys are split by a large energy does one obtain well-defined and long-lived spin states appropriate for quantum computing. Here we show that the small valley splittings observed in previous experiments on Si/SiGe heterostructures result from atomic steps at the quantum well interface. Lateral confinement in a quantum point contact limits the electron wavefunctions to several steps, and enhances the valley splitting substantially, up to 1.5 meV. The combination of electronic and magnetic confinement produces a valley splitting larger than the spin splitting, which is controllable over a wide range. These results improve the outlook for realizing spin qubits with long coherence times in silicon-based devices.
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Submitted 13 July, 2007; v1 submitted 8 November, 2006;
originally announced November 2006.
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Quantum dots in Si/SiGe 2DEGs with Schottky top-gated leads
Authors:
K A Slinker,
K L M Lewis,
C C Haselby,
S Goswami,
L J Klein,
J O Chu,
S N Coppersmith,
Robert Joynt,
R H Blick,
Mark Friesen,
M A Eriksson
Abstract:
We report on the fabrication and characterization of quantum dot devices in a Schottky-gated silicon/silicon-germanium two-dimensional electron gas (2DEG). The dots are confined laterally inside an etch-defined channel, while their potential is modulated by an etch-defined 2DEG gate in the plane of the dot. For the first time in this material, Schottky top gates are used to define and tune the t…
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We report on the fabrication and characterization of quantum dot devices in a Schottky-gated silicon/silicon-germanium two-dimensional electron gas (2DEG). The dots are confined laterally inside an etch-defined channel, while their potential is modulated by an etch-defined 2DEG gate in the plane of the dot. For the first time in this material, Schottky top gates are used to define and tune the tunnel barriers of the dot. The leakage current from the gates is reduced by minimizing their active area. Further suppression of the leakage is achieved by increasing the etch depth of the channel. The top gates are used to put the dot into the Coulomb blockade regime, and conductance oscillations are observed as the voltage on the side gate is varied.
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Submitted 16 August, 2005; v1 submitted 3 August, 2005;
originally announced August 2005.
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Quantum Dots and Etch-Induced Depletion of a Silicon 2DEG
Authors:
L. J. Klein,
K. L. M. Lewis,
K. A. Slinker,
Srijit Goswami,
D. W. van der Weide,
R. H. Blick,
P. M. Mooney,
J. O. Chu,
S. N. Coppersmith,
Mark Friesen,
Mark A. Eriksson
Abstract:
The controlled depletion of electrons in semiconductors is the basis for numerous devices. Reactive-ion etching provides an effective technique for fabricating both classical and quantum devices. However, Fermi level pinning can occur, and must be carefully considered in the development of small devices, such as quantum dots. Because of depletion, the electrical size of the device is reduced in…
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The controlled depletion of electrons in semiconductors is the basis for numerous devices. Reactive-ion etching provides an effective technique for fabricating both classical and quantum devices. However, Fermi level pinning can occur, and must be carefully considered in the development of small devices, such as quantum dots. Because of depletion, the electrical size of the device is reduced in comparison with its physical dimension. To investigate this issue, we fabricate several types of devices in silicon-germanium heterostructures using two different etches, CF$_4$ and SF$_6$. We estimate the depletion width associated with each etch by two methods: (i) conductance measurements in etched wires of decreasing thickness (to determine the onset of depletion), (ii) capacitance measurements of quantum dots (to estimate the size of the active region). We find that the SF$_6$ etch causes a much smaller depletion width, making it more suitable for device fabrication.
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Submitted 31 March, 2005;
originally announced March 2005.
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Electron spin coherence in Si/SiGe quantum wells
Authors:
J. L. Truitt,
K. A. Slinker,
K. L. M. Lewis,
D. E. Savage,
Charles Tahan,
L. J. Klein,
Robert Joynt,
M. G. Lagally,
D. W. van der Weide,
S. N. Coppersmith,
M. A. Eriksson,
A. M. Tyryshkin,
J. O. Chu,
P. M. Mooney
Abstract:
The mechanisms limiting the spin coherence time of electrons are of great importance for spintronics. We present electron spin resonance (ESR) and transport measurements of six different two dimensional electron gases in silicon/silicon-germanium (Si/SiGe 2DEGs). The spin decoherence time $T_2^*$ is presented in conjunction with the 2DEG density $n_e$ and momentum scattering time $τ_p$ as measur…
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The mechanisms limiting the spin coherence time of electrons are of great importance for spintronics. We present electron spin resonance (ESR) and transport measurements of six different two dimensional electron gases in silicon/silicon-germanium (Si/SiGe 2DEGs). The spin decoherence time $T_2^*$ is presented in conjunction with the 2DEG density $n_e$ and momentum scattering time $τ_p$ as measured from transport experiments. A pronounced dependence of $T_2^*$ on the orientation of the applied magnetic field with respect to 2DEG layer is found which is not consistent with that expected from any mechanism described in the literature.
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Submitted 29 November, 2004;
originally announced November 2004.
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Spectroscopy of Valley Splitting in a Silicon/Silicon-Germanium Two-Dimensional Electron Gas
Authors:
Srijit Goswami,
Mark Friesen,
J. L. Truitt,
Charles Tahan,
L. J. Klein,
J. O. Chu,
P. M. Mooney,
D. W. van der Weide,
S. N. Coppersmith,
Robert Joynt,
M. A. Eriksson
Abstract:
The lifting of the two-fold degeneracy of the conduction valleys in a strained silicon quantum well is critical for spin quantum computing. Here, we obtain an accurate measurement of the splitting of the valley states in the low-field region of interest, using the microwave spectroscopy technique of electron valley resonance (EVR). We compare our results with conventional methods, observing a li…
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The lifting of the two-fold degeneracy of the conduction valleys in a strained silicon quantum well is critical for spin quantum computing. Here, we obtain an accurate measurement of the splitting of the valley states in the low-field region of interest, using the microwave spectroscopy technique of electron valley resonance (EVR). We compare our results with conventional methods, observing a linear magnetic field dependence of the valley splitting, and a strong low-field suppression, consistent with recent theory. The resonance linewidth shows a marked enhancement above $T\simeq 300$ mK.
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Submitted 18 December, 2006; v1 submitted 17 August, 2004;
originally announced August 2004.
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Coulomb Blockade in a Silicon/Silicon-Germanium Two-Dimensional Electron Gas Quantum Dot
Authors:
L. J. Klein,
K. A. Slinker,
J. L. Truitt,
S. Goswami,
K. L. M. Lewis,
S. N. Coppersmith,
D. W. van der Weide,
Mark Friesen,
R. H. Blick,
D. E. Savage,
M. G. Lagally,
Charles Tahan,
Robert Joynt,
M. A. Eriksson,
J. O. Chu,
J. A. Ott,
P. M. Mooney
Abstract:
We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon-germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive ion etching. The dot potential and electron density are modified by laterally defined side gates in the plane of the dot. Low temperature measurements show Coul…
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We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon-germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive ion etching. The dot potential and electron density are modified by laterally defined side gates in the plane of the dot. Low temperature measurements show Coulomb blockade with a single electron charging energy of 3.2 meV.
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Submitted 20 April, 2004; v1 submitted 16 April, 2004;
originally announced April 2004.
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Comment on ``Electric Field Scaling at B=0 Metal-Insulator Transition in Two Dimensions''
Authors:
K. Ismail,
J. O. Chu,
Dragana Popovic,
A. B. Fowler,
S. Washburn
Abstract:
In a recent Letter, Kravchenko et al. [cond-mat/9608101] have provided evidence for a metal-insulator transition (MIT) in a two-dimensional electron system (2DES) in Si metal-oxide-semiconductor field-effect transistors (MOSFETs). The transition observed in these samples occurs at relatively low electron densities $n_{s}\sim (1-2)\times 10^{11}cm^{-2}$ and high disorder $σ_{c}\sim e^{2}/2h$. We…
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In a recent Letter, Kravchenko et al. [cond-mat/9608101] have provided evidence for a metal-insulator transition (MIT) in a two-dimensional electron system (2DES) in Si metal-oxide-semiconductor field-effect transistors (MOSFETs). The transition observed in these samples occurs at relatively low electron densities $n_{s}\sim (1-2)\times 10^{11}cm^{-2}$ and high disorder $σ_{c}\sim e^{2}/2h$. We present evidence for a 2D MIT in a structure where the disorderis about two orders of magnitude weaker than in Si MOSFETs. The MIT occurs in the same range of $n_s$ Providing very strong evidence that the 2D MIT in Si-based devices is caused by electron-electron interactions.
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Submitted 6 July, 1997;
originally announced July 1997.
