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Purcell enhancement of photogalvanic currents in a van der Waals plasmonic self-cavity
Authors:
Xinyu Li,
Jesse Hagelstein,
Gunda Kipp,
Felix Sturm,
Kateryna Kusyak,
Yunfei Huang,
Benedikt F. Schulte,
Alexander M. Potts,
Jonathan Stensberg,
Victoria Quirós-Cordero,
Chiara Trovatello,
Zhi Hao Peng,
Chaowei Hu,
Jonathan M. DeStefano,
Michael Fechner,
Takashi Taniguchi,
Kenji Watanabe,
P. James Schuck,
Xiaodong Xu,
Jiun-Haw Chu,
Xiaoyang Zhu,
Angel Rubio,
Marios H. Michael,
Matthew W. Day,
Hope M. Bretscher
, et al. (1 additional authors not shown)
Abstract:
Cavities provide a means to manipulate the optical and electronic responses of quantum materials by selectively enhancing light-matter interaction at specific frequencies and momenta. While cavities typically involve external structures, exfoliated flakes of van der Waals (vdW) materials can form intrinsic self-cavities due to their small finite dimensions, confining electromagnetic fields into pl…
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Cavities provide a means to manipulate the optical and electronic responses of quantum materials by selectively enhancing light-matter interaction at specific frequencies and momenta. While cavities typically involve external structures, exfoliated flakes of van der Waals (vdW) materials can form intrinsic self-cavities due to their small finite dimensions, confining electromagnetic fields into plasmonic cavity modes, characterized by standing-wave current distributions. While cavity-enhanced phenomena are well-studied at optical frequencies, the impact of self-cavities on nonlinear electronic responses--such as photogalvanic currents--remains largely unexplored, particularly in the terahertz regime, critical for emerging ultrafast optoelectronic technologies. Here, we report a self-cavity-induced Purcell enhancement of photogalvanic currents in the vdW semimetal WTe$_2$. Using ultrafast optoelectronic circuitry, we measured coherent near-field THz emission resulting from nonlinear photocurrents excited at the sample edges. We observed enhanced emission at finite frequencies, tunable via excitation fluence and sample geometry, which we attribute to plasmonic interference effects controlled by the cavity boundaries. We developed an analytical theory that captures the cavity resonance conditions and spectral response across multiple devices. Our findings establish WTe$_2$ as a bias-free, geometry-tunable THz emitter and demonstrate the potential of self-cavity engineering for controlling nonlinear, nonequilibrium dynamics in quantum materials.
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Submitted 10 July, 2025;
originally announced July 2025.
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Giant elastoresistance in magic-angle twisted bilayer graphene
Authors:
Xuetao Ma,
Zhaoyu Liu,
Jiaqi Cai,
Kenji Watanabe,
Takashi Taniguchi,
Xiaodong Xu,
Jiun-Haw Chu,
Matthew Yankowitz
Abstract:
Strongly correlated and topological phases in moiré materials are exquisitely sensitive to lattice geometry at both atomic and superlattice length scales. Twist angle, pressure, and strain directly modify the lattice, and thus act as highly effective tuning parameters. Here we examine electrical transport in twisted bilayer graphene subjected to continuous uniaxial strain. Near the magic angle (…
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Strongly correlated and topological phases in moiré materials are exquisitely sensitive to lattice geometry at both atomic and superlattice length scales. Twist angle, pressure, and strain directly modify the lattice, and thus act as highly effective tuning parameters. Here we examine electrical transport in twisted bilayer graphene subjected to continuous uniaxial strain. Near the magic angle ($\approx 1.1^{\circ}$), devices exhibit a pronounced elastoresistance that depends on band filling and temperature, with a gauge factor more than two orders of magnitude larger than that of conventional metals. In selected doping regimes the elastoresistance exhibits a Curie-Weiss-like temperature divergence. We discuss possible microscopic origins, including nematic fluctuations and enhanced electronic entropy from fluctuating isospin moments. Our work establishes uniaxial strain as a versatile probe of correlated physics in a moiré material.
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Submitted 15 May, 2025;
originally announced May 2025.
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Elastocaloric signature of the excitonic instability in Ta$_2$NiSe$_5$
Authors:
Elliott Rosenberg,
Joss Ayres-Sims,
Andrew Millis,
David Cobden,
Jiun-Haw Chu
Abstract:
On cooling through a temperature $T_S$ of around 324 K, Ta$_2$NiSe$_5$ undergoes a transition from a semimetallic state to one with a gapped electronic spectrum which is suspected to be an excitonic insulator. However, at this transition the structure also changes, from orthorhombic to monoclinic, leaving open the question of whether it is driven primarily by excitonic ordering or by a lattice ins…
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On cooling through a temperature $T_S$ of around 324 K, Ta$_2$NiSe$_5$ undergoes a transition from a semimetallic state to one with a gapped electronic spectrum which is suspected to be an excitonic insulator. However, at this transition the structure also changes, from orthorhombic to monoclinic, leaving open the question of whether it is driven primarily by excitonic ordering or by a lattice instability. A lattice instability of this symmetry would correspond to softening of a B$_{2g}$ optical or acoustic phonon mode. Here, we report that elastocaloric measurements of Ta$_2$NiSe$_5$ with induced B$_{2g}$ strain reveal a thermodynamic susceptibility described by a Curie-Weiss law with a Curie temperature $T^*$ of 298 K. The fact that $T^*$ is close to $T_S$ rules out the possibility that the B$_{2g}$ acoustic mode is responsible for the transition. Since prior Raman measurements have shown minimal softening of the B$_{2g}$ optical mode as well, our finding strengthens the case that the transition is largely excitonic in nature. Our work underscores the potential of using strain as a tool for separating electronic and lattice contributions in phase transitions.
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Submitted 14 April, 2025;
originally announced April 2025.
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Engineering robust strain transmission in van der Waals heterostructure devices
Authors:
John Cenker,
Jordan Fonseca,
Mai Nguyen,
Chaowei Hu,
Daniel G. Chica,
Takashi Taniguchi,
Kenji Watanabe,
Xiaoyang Zhu,
Xavier Roy,
Jiun-Haw Chu,
Xiaodong Xu
Abstract:
Atomically thin van der Waals materials provide a highly tunable platform for exploring emergent quantum phenomena in solid state systems. Due to their remarkable mechanical strength, one enticing tuning knob is strain. However, the weak strain transfer of graphite and hBN, which are standard components of high-qualityvdW devices, poses fundamental challenges for high-strain experiments. Here, we…
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Atomically thin van der Waals materials provide a highly tunable platform for exploring emergent quantum phenomena in solid state systems. Due to their remarkable mechanical strength, one enticing tuning knob is strain. However, the weak strain transfer of graphite and hBN, which are standard components of high-qualityvdW devices, poses fundamental challenges for high-strain experiments. Here, we investigate strain transmission in less-explored orthorhombic crystals and find robust transmission up to several percent at cryogenic temperatures. We further show that strain can be efficiently transferred through these crystals to other 2D materials in traditional heterostructure devices. Using this capability, we demonstrate in-situ strain and gate control of the optical properties of monolayer WS2 utilizing the high-\k{appa} dielectric insulator Bi2SeO5 as a substrate. These results enable the exploration of combined cryo-strain and gate tuning in a variety of layered systems such as moiré heterostructures, air-sensitive 2D magnets and superconductors, and any gated 2D device.
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Submitted 16 March, 2025;
originally announced March 2025.
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Observation of High-Temperature Dissipationless Fractional Chern Insulator
Authors:
Heonjoon Park,
Weijie Li,
Chaowei Hu,
Christiano Beach,
Miguel Gonçalves,
Juan Felipe Mendez-Valderrama,
Jonah Herzog-Arbeitman,
Takashi Taniguchi,
Kenji Watanabe,
David Cobden,
Liang Fu,
B. Andrei Bernevig,
Nicolas Regnault,
Jiun-Haw Chu,
Di Xiao,
Xiaodong Xu
Abstract:
The fractional quantum anomalous Hall effect has recently been experimentally observed in zero-field fractional Chern insulators (FCI). However, an outstanding challenge is the presence of a substantial longitudinal resistance $R_{xx}$ (a few k$Ω$), even though the anomalous Hall resistance $R_{xy}$ is quantized. This dissipative behavior is likely linked to imperfect sample quality. Here, we repo…
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The fractional quantum anomalous Hall effect has recently been experimentally observed in zero-field fractional Chern insulators (FCI). However, an outstanding challenge is the presence of a substantial longitudinal resistance $R_{xx}$ (a few k$Ω$), even though the anomalous Hall resistance $R_{xy}$ is quantized. This dissipative behavior is likely linked to imperfect sample quality. Here, we report transport measurements of a drastically improved twisted $\text{MoTe}_2$ bilayer device, which exhibits quantized $R_{xy}$ and vanishing $R_{xx}$ for the $-2/3$ state, marking a dissipationless FCI. Contrary to fractional quantum Hall states where the energy gap increases with magnetic field, we find that the thermal activation gap of the observed FCI states decreases rapidly as the magnetic field rises from zero, then plateaus above a few teslas. This observation is attributed to the interplay between spin and charge gaps. Due to the spontaneous ferromagnetism, the spin gap dominates at low field, while the charge gap becomes appreciable once the magnetic field freezes spin fluctuations. For the $-2/3$ state, we estimate the spin and FCI gap of about 55 and 20 K, respectively. Our results provide insights into the energy scale of FCI and offer a pathway for quantum engineering of exotic correlated topological states.
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Submitted 13 March, 2025;
originally announced March 2025.
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Exact quantum critical states with a superconducting quantum processor
Authors:
Wenhui Huang,
Xin-Chi Zhou,
Libo Zhang,
Jiawei Zhang,
Yuxuan Zhou,
Bing-Chen Yao,
Zechen Guo,
Peisheng Huang,
Qixian Li,
Yongqi Liang,
Yiting Liu,
Jiawei Qiu,
Daxiong Sun,
Xuandong Sun,
Zilin Wang,
Changrong Xie,
Yuzhe Xiong,
Xiaohan Yang,
Jiajian Zhang,
Zihao Zhang,
Ji Chu,
Weijie Guo,
Ji Jiang,
Xiayu Linpeng,
Wenhui Ren
, et al. (7 additional authors not shown)
Abstract:
Anderson localization physics features three fundamental types of eigenstates: extended, localized, and critical. Confirming the presence of critical states necessitates either advancing the analysis to the thermodynamic limit or identifying a universal mechanism which can rigorously determine these states. Here we report the unambiguous experimental realization of critical states, governed by a r…
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Anderson localization physics features three fundamental types of eigenstates: extended, localized, and critical. Confirming the presence of critical states necessitates either advancing the analysis to the thermodynamic limit or identifying a universal mechanism which can rigorously determine these states. Here we report the unambiguous experimental realization of critical states, governed by a rigorous mechanism for exact quantum critical states, and further observe a generalized mechanism that quasiperiodic zeros in hopping couplings protect the critical states. Leveraging a superconducting quantum processor with up to 56 qubits, we implement a programmable mosaic model with tunable couplings and on-site potentials. By measuring time-evolved observables, we identify both delocalized dynamics and incommensurately distributed zeros in the couplings, which are the defining features of the critical states. We map the localized-to-critical phase transition and demonstrate that critical states persist until quasiperiodic zeros are removed by strong long-range couplings, highlighting a novel generalized mechanism discovered in this experiment and shown with rigorous theory. Finally, we resolve the energy-dependent transition between localized and critical states, revealing the presence of anomalous mobility edges.
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Submitted 25 March, 2025; v1 submitted 26 February, 2025;
originally announced February 2025.
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Intrinsic vs. Extrinsic Magnetic Transitions in Sr3Ru2O7 films
Authors:
R. Choudhary,
A. Rajapitamahuni,
S. Guo,
Qi. Jiang,
J. -H. Chu,
K. A. Mkhoyan,
B. Jalan
Abstract:
In scientific research, both positive and negative results play crucial role in advancing the field. Negative results provide valuable insights that can guide future experiments and prevent repeated failures. Here we present our growth attempts of Sr3Ru2O7 thin films using the hybrid molecular beam epitaxy. X-ray diffraction suggests nominally phase-pure films. A combination of magnetoresistance a…
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In scientific research, both positive and negative results play crucial role in advancing the field. Negative results provide valuable insights that can guide future experiments and prevent repeated failures. Here we present our growth attempts of Sr3Ru2O7 thin films using the hybrid molecular beam epitaxy. X-ray diffraction suggests nominally phase-pure films. A combination of magnetoresistance and magnetization measurements exhibits an onset of ferromagnetism at 170 K and 100 K, along with a metamagnetic-like transition at 40 K. These results could initially be interpreted as intrinsic behavior of strain-engineered Sr3Ru2O7 films. However, detailed microstructural analysis reveals intergrowths of Sr2RuO4, Sr4Ru3O10, and SrRuO3 phases, dispersed throughout the film. Our findings suggest that the Sr3Ru2O7 films are likely paramagnetic, with the observed ferromagnetism arising from the Sr4Ru3O10 and SrRuO3 phases. Our results highlight the need for detailed microstructural analysis when interpreting new material properties influenced by strain and microstructure.
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Submitted 23 February, 2025;
originally announced February 2025.
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Machine learning exploration of topological polarization pattern in hexagonal boron nitride moiré superlattice
Authors:
Jun-Ding Zheng,
Cheng-Shi Yao,
Song-Chuan Zhou,
Yu-Ke Zhang,
Zhi-Qiang Bao,
Wen-Yi Tong,
Jun-Hao Chu,
Chun-Gang Duan
Abstract:
Twisted moiré supercells, which can be approximated as a combination of sliding bilayers and constitute various topologically nontrivial polarization patterns, attract extensive attention recently. However, because of the excessive size of the moiré supercell, most studies are based on effective models and lack the results of first-principles calculation. In this work, we use machine learning to d…
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Twisted moiré supercells, which can be approximated as a combination of sliding bilayers and constitute various topologically nontrivial polarization patterns, attract extensive attention recently. However, because of the excessive size of the moiré supercell, most studies are based on effective models and lack the results of first-principles calculation. In this work, we use machine learning to determine the topological structure of the polarization pattern in twisted and strained bilayer of hexagonal boron nitride (h-BN). We further confirm that the topological pattern can be effectively modulated by the vertical electric field and lattice mismatch. Finally, local polarization also exists in the antiparallel stacked h-BN twisted and strained bilayers. Our work provides a detailed study of the polarization pattern in the moiré superlattice, which we believe can facilitate more research in moiré ferroelectricity, topological physics, and related fields.
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Submitted 18 February, 2025;
originally announced February 2025.
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Visualizing Field-free Deterministic Magnetic Switching of all-van der Waals Spin-Orbit Torque System Using Spin Ensembles in Hexagonal Boron Nitride
Authors:
Xi Zhang,
Jingcheng Zhou,
Chaowei Hu,
Kuangyin Deng,
Chuangtang Wang,
Nishkarsh Agarwal,
Hanshang Jin,
Faris A. Al-Matouq,
Stelo Xu,
Roshan S. Trivedi,
Senlei Li,
Sumedh Rathi,
Hanyi Lu,
Zhigang Jiang,
Valentin Taufour,
Robert Hovden,
Liuyan Zhao,
Ran Cheng,
Xiaodong Xu,
Jiun-Haw Chu,
Chunhui Rita Du,
Hailong Wang
Abstract:
Recently, optically active spin defects embedded in van der Waals (vdW) crystals have emerged as a transformative quantum sensing platform to explore cutting-edge materials science and quantum physics. Taking advantage of excellent solid-state integrability, this new class of spin defects can be arranged in controllable nanoscale proximity of target materials in vdW heterostructures, showing great…
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Recently, optically active spin defects embedded in van der Waals (vdW) crystals have emerged as a transformative quantum sensing platform to explore cutting-edge materials science and quantum physics. Taking advantage of excellent solid-state integrability, this new class of spin defects can be arranged in controllable nanoscale proximity of target materials in vdW heterostructures, showing great promise for improving spatial resolution and field sensitivity of current sensing technologies. Building on this state-of-the-art measurement platform, here we report hexagonal boron nitride-based quantum imaging of field-free deterministic magnetic switching of room-temperature two-dimensional magnet Fe3GaTe2 in an all-vdW spin-orbit torque (SOT) system. By visualizing SOT-driven variations of nanoscale Fe3GaTe2 magnetic stray field profile under different conditions, we have revealed how the observed magnetic switching evolves from deterministic to indeterministic behavior due to the interplay between out-of-plane spins, in-plane spins and Joule heating. This understanding, which is otherwise difficult to access by conventional transport measurements, offers valuable insights on material design, testing, and evaluation of next-generation vdW spintronic devices.
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Submitted 6 February, 2025;
originally announced February 2025.
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Giant coercivity and enhanced intrinsic anomalous Hall effect at vanishing magnetization in a compensated kagome ferrimagnet
Authors:
Jonathan M. DeStefano,
Elliott Rosenberg,
Guodong Ren,
Yongbin Lee,
Zhenhua Ning,
Olivia Peek,
Kamal Harrison,
Saiful I. Khondaker,
Liqin Ke,
Igor I. Mazin,
Juan Carlos Idrobo,
Jiun-Haw Chu
Abstract:
Ferrimagnets that can be driven to magnetic compensation show promise for use in spintronics as they exhibit a finite anomalous Hall effect at zero magnetic field without having a significant magnetic moment. Compensated ferrimagnet spintronic devices with both a large anomalous Hall effect and a high coercivity would be simultaneously easy to read and difficult to erase. The kagome ferrimagnet Tb…
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Ferrimagnets that can be driven to magnetic compensation show promise for use in spintronics as they exhibit a finite anomalous Hall effect at zero magnetic field without having a significant magnetic moment. Compensated ferrimagnet spintronic devices with both a large anomalous Hall effect and a high coercivity would be simultaneously easy to read and difficult to erase. The kagome ferrimagnet TbMn$_6$Sn$_6$ has been reported to host a large intrinsic anomalous Hall effect. Here, we demonstrate that doping the Mn sites with Cr drives the system towards magnetic compensation. For nearly compensated compositions at low temperatures, giant coercive fields exceeding 14 T are observed. Additionally, Cr doping significantly enhances the intrinsic anomalous Hall effect, which can be attributed to a shift in the Fermi level. Our results extend the range of unique magnetic states observed in kagome materials, demonstrating that chemical doping is an effective strategy to tune and realize these states.
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Submitted 6 February, 2025;
originally announced February 2025.
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Nonperturbative Nonlinear Transport in a Floquet-Weyl Semimetal
Authors:
Matthew W. Day,
Kateryna Kusyak,
Felix Sturm,
Juan I. Aranzadi,
Hope M. Bretscher,
Michael Fechner,
Toru Matsuyama,
Marios H. Michael,
Benedikt F. Schulte,
Xinyu Li,
Jesse Hagelstein,
Dorothee Herrmann,
Gunda Kipp,
Alex M. Potts,
Jonathan M. DeStefano,
Chaowei Hu,
Yunfei Huang,
Takashi Taniguchi,
Kenji Watanabe,
Guido Meier,
Dongbin Shin,
Angel Rubio,
Jiun-Haw Chu,
Dante M. Kennes,
Michael A. Sentef
, et al. (1 additional authors not shown)
Abstract:
Periodic laser driving, known as Floquet engineering, is a powerful tool to manipulate the properties of quantum materials. Using circularly polarized light, artificial magnetic fields, called Berry curvature, can be created in the photon-dressed Floquet-Bloch states that form. This mechanism, when applied to 3D Dirac and Weyl systems, is predicted to lead to photon-dressed movement of Weyl nodes…
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Periodic laser driving, known as Floquet engineering, is a powerful tool to manipulate the properties of quantum materials. Using circularly polarized light, artificial magnetic fields, called Berry curvature, can be created in the photon-dressed Floquet-Bloch states that form. This mechanism, when applied to 3D Dirac and Weyl systems, is predicted to lead to photon-dressed movement of Weyl nodes which should be detectable in the transport sector. The transport response of such a topological light-matter hybrid, however, remains experimentally unknown. Here, we report on the transport properties of the type-II Weyl semimetal T$\mathrm{_d}$-MoTe$_\mathrm{2}$ illuminated by a femtosecond pulse of circularly polarized light. Using an ultrafast optoelectronic device architecture, we observed injection currents and a helicity-dependent anomalous Hall effect whose scaling with laser field strongly deviate from the perturbative laws of nonlinear optics. We show using Floquet theory that this discovery corresponds to the formation of a magnetic Floquet-Weyl semimetal state. Numerical ab initio simulations support this interpretation, indicating that the light-induced motion of the Weyl nodes contributes substantially to the measured transport signals. This work demonstrates the ability to generate large effective magnetic fields ($>$ 30T) with light, which can be used to manipulate the magnetic and topological properties of a range of quantum materials.
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Submitted 6 September, 2024;
originally announced September 2024.
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Ferromagnetism and Topology of the Higher Flat Band in a Fractional Chern Insulator
Authors:
Heonjoon Park,
Jiaqi Cai,
Eric Anderson,
Xiao-Wei Zhang,
Xiaoyu Liu,
William Holtzmann,
Weijie Li,
Chong Wang,
Chaowei Hu,
Yuzhou Zhao,
Takashi Taniguchi,
Kenji Watanabe,
Jihui Yang,
David Cobden,
Jiun-Haw Chu,
Nicolas Regnault,
B. Andrei Bernevig,
Liang Fu,
Ting Cao,
Di Xiao,
Xiaodong Xu
Abstract:
The recent observation of the fractional quantum anomalous Hall effect in moiré fractional Chern insulators provides an opportunity to investigate zero magnetic field anyons. To potentially realize non-Abelian anyons, one approach is to engineer higher flat Chern bands that mimic higher Landau levels. Here, we investigate the interaction, topology, and ferromagnetism of the second moiré miniband i…
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The recent observation of the fractional quantum anomalous Hall effect in moiré fractional Chern insulators provides an opportunity to investigate zero magnetic field anyons. To potentially realize non-Abelian anyons, one approach is to engineer higher flat Chern bands that mimic higher Landau levels. Here, we investigate the interaction, topology, and ferromagnetism of the second moiré miniband in twisted MoTe2 bilayers. At half filling of the second miniband, we observe spontaneous ferromagnetism and an incipient Chern insulator state. The Chern numbers of the top two moiré flat bands exhibit opposite signs for twist angles above 3.1°, but share the same sign near 2.6°, consistent with theoretical predictions. In the 2.6° device, increasing magnetic field induces a topological phase transition via band crossing between opposite valleys, resulting in an emergent state with Chern number C = -2. Additionally, an insulating state at half filling of the second valley-polarized band suggests a charge-ordered state is favored over the fractional Chern insulator state. These findings lay a foundation for understanding the higher flat Chern bands, crucial for the discovery of non-Abelian fractional Chern insulators.
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Submitted 16 December, 2024; v1 submitted 13 June, 2024;
originally announced June 2024.
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Ubiquitous Flat Bands in a Cr-based Kagome Superconductor
Authors:
Yucheng Guo,
Zehao Wang,
Fang Xie,
Yuefei Huang,
Bin Gao,
Ji Seop Oh,
Han Wu,
Zhaoyu Liu,
Zheng Ren,
Yuan Fang,
Ananya Biswas,
Yichen Zhang,
Ziqin Yue,
Cheng Hu,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Makoto Hashimoto,
Donghui Lu,
Junichiro Kono,
Jiun-Haw Chu,
Boris I Yakobson,
Robert J Birgeneau,
Qimiao Si,
Pengcheng Dai
, et al. (1 additional authors not shown)
Abstract:
In the quest for novel quantum states driven by topology and correlation, kagome lattice materials have garnered significant interest due to their distinctive electronic band structures, featuring flat bands (FBs) arising from the quantum destructive interference of the electronic wave function. The tuning of the FBs to the chemical potential would lead to the possibility of liberating electronic…
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In the quest for novel quantum states driven by topology and correlation, kagome lattice materials have garnered significant interest due to their distinctive electronic band structures, featuring flat bands (FBs) arising from the quantum destructive interference of the electronic wave function. The tuning of the FBs to the chemical potential would lead to the possibility of liberating electronic instabilities that lead to emergent electronic orders. Despite extensive studies, direct evidence of FBs tuned to the chemical potential and their participation in emergent electronic orders have been lacking in bulk quantum materials. Here using a combination of Angle-Resolved Photoemission Spectroscopy (ARPES) and Density Functional Theory (DFT), we reveal that the low-energy electronic structure of the recently discovered Cr-based kagome metal superconductor CsCr3Sb5 is dominated by a pervasive FB in close proximity to, and below the Fermi level. A comparative analysis with orbital-projected DFT and polarization dependence measurement uncovers that an orbital-selective renormalization mechanism is needed to reconcile the discrepancy with the DFT calculations, which predict the FB to appear 200 meV above the Fermi level. Furthermore, we observe the FB to shift away from the Fermi level by 20 meV in the low-temperature density wave-ordered phase, highlighting the role of the FB in the emergent electronic order. Our results reveal CsCr3Sb5 to stand out as a promising platform for further exploration into the effects of FBs near the Fermi level on kagome lattices, and their role in emergent orders in bulk quantum materials.
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Submitted 12 June, 2024; v1 submitted 7 June, 2024;
originally announced June 2024.
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Visualizing the microscopic origins of topology in twisted molybdenum ditelluride
Authors:
Ellis Thompson,
Keng Tou Chu,
Florie Mesple,
Xiao-Wei Zhang,
Chaowei Hu,
Yuzhou Zhao,
Heonjoon Park,
Jiaqi Cai,
Eric Anderson,
Kenji Watanabe,
Takashi Taniguchi,
Jihui Yang,
Jiun-Haw Chu,
Xiaodong Xu,
Ting Cao,
Di Xiao,
Matthew Yankowitz
Abstract:
In moiré materials with flat electronic bands and suitable quantum geometry, strong correlations can give rise to novel topological states of matter. The nontrivial band topology of twisted molybdenum ditelluride (tMoTe$_2$) -- responsible for its fractional quantum anomalous Hall (FQAH) states -- is predicted to arise from a layer-pseudospin skyrmion lattice. Tracing the layer polarization of wav…
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In moiré materials with flat electronic bands and suitable quantum geometry, strong correlations can give rise to novel topological states of matter. The nontrivial band topology of twisted molybdenum ditelluride (tMoTe$_2$) -- responsible for its fractional quantum anomalous Hall (FQAH) states -- is predicted to arise from a layer-pseudospin skyrmion lattice. Tracing the layer polarization of wavefunctions within the moiré unit cell can thus offer crucial insights into the band topology. Here, we use scanning tunneling microscopy and spectroscopy (STM/S) to probe the layer-pseudospin skyrmion textures of tMoTe$_2$. We do this by simultaneously visualizing the moiré lattice structure and the spatial localization of its electronic states. We find that the wavefunctions associated with the topological flat bands exhibit a spatially-dependent layer polarization within the moiré unit cell. This is in excellent agreement with our theoretical modeling, thereby revealing a direct microscopic connection between the structural properties of tMoTe$_2$ and its band topology. Our work enables new pathways for engineering FQAH states with strain, as well as future STM studies of the intertwined correlated and topological states arising in gate-tunable devices.
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Submitted 29 May, 2024;
originally announced May 2024.
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Perspective: Probing elasto-quantum materials with X-ray techniques and in situ anisotropic strain
Authors:
Han Zhang,
Joshua J. Sanchez,
Jiun-Haw Chu,
Jian Liu
Abstract:
Anisotropic lattice deformation plays an important role in the quantum mechanics of solid state physics. The possibility of mediating the competition and cooperation among different order parameters by applying in situ strain/stress on quantum materials has led to discoveries of a variety of elasto-quantum effects on emergent phenomena. It has become increasingly critical to have the capability of…
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Anisotropic lattice deformation plays an important role in the quantum mechanics of solid state physics. The possibility of mediating the competition and cooperation among different order parameters by applying in situ strain/stress on quantum materials has led to discoveries of a variety of elasto-quantum effects on emergent phenomena. It has become increasingly critical to have the capability of combining the in situ strain tuning with X-ray techniques, especially those based on synchrotrons, to probe the microscopic elasto-responses of the lattice, spin, charge, and orbital degrees of freedom. Herein, we briefly review the recent studies that embarked on utilizing elasto-X-ray characterizations on representative material systems and demonstrated the emerging opportunities enabled by this method. With that, we further discuss the promising prospect in this rising area of quantum materials research and the bright future of elasto-X-ray techniques.
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Submitted 16 May, 2024;
originally announced May 2024.
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Local probe of bulk and edge states in a fractional Chern insulator
Authors:
Zhurun Ji,
Heonjoon Park,
Mark E. Barber,
Chaowei Hu,
Kenji Watanabe,
Takashi Taniguchi,
Jiun-Haw Chu,
Xiaodong Xu,
Zhi-xun Shen
Abstract:
Fractional quantum Hall effect (FQHE) is a prime example of topological quantum many-body phenomena, arising from the interplay between strong electron correlation, topological order, and time reversal symmetry breaking. Recently, a lattice analog of FQHE at zero magnetic field has been observed, confirming the existence of a zero-field fractional Chern insulator (FCI). Despite this, the bulk-edge…
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Fractional quantum Hall effect (FQHE) is a prime example of topological quantum many-body phenomena, arising from the interplay between strong electron correlation, topological order, and time reversal symmetry breaking. Recently, a lattice analog of FQHE at zero magnetic field has been observed, confirming the existence of a zero-field fractional Chern insulator (FCI). Despite this, the bulk-edge correspondence -- a hallmark of FCI featuring an insulating bulk with conductive edges -- has not been directly observed. In fact, this correspondence has not been visualized in any system for fractional states due to experimental challenges. Here we report the imaging of FCI edge states in twisted MoTe2 by employing a newly developed modality of microwave-impedance microscopy. By tuning the carrier density, we observe the system evolving between metallic and FCI states, the latter of which exhibits insulating bulk and conductive edges as expected from bulk-boundary correspondence. We also observe the evolution of edge states across the topological phase transition from an incompressible Chern insulator state to a metal and finally to a putative charge ordered insulating state as a function of interlayer electric field. The local measurement further reveals tantalizing prospects of neighboring domains with different fractional orders. These findings pave the way for research into topologically protected 1D interfaces between various anyonic states at zero magnetic field, such as topological entanglement entropy, Halperin-Laughlin interfaces, and the creation of non-abelian anyons.
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Submitted 10 April, 2024;
originally announced April 2024.
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Continuously tunable uniaxial strain control of van der Waals heterostructure devices
Authors:
Zhaoyu Liu,
Xuetao Ma,
John Cenker,
Jiaqi Cai,
Zaiyao Fei,
Paul Malinowski,
Joshua Mutch,
Yuzhou Zhao,
Kyle Hwangbo,
Zhong Lin,
Arnab Manna,
Jihui Yang,
David Cobden,
Xiaodong Xu,
Matthew Yankowitz,
Jiun-Haw Chu
Abstract:
Uniaxial strain has been widely used as a powerful tool for investigating and controlling the properties of quantum materials. However, existing strain techniques have so far mostly been limited to use with bulk crystals. Although recent progress has been made in extending the application of strain to two-dimensional van der Waals (vdW) heterostructures, these techniques have been limited to optic…
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Uniaxial strain has been widely used as a powerful tool for investigating and controlling the properties of quantum materials. However, existing strain techniques have so far mostly been limited to use with bulk crystals. Although recent progress has been made in extending the application of strain to two-dimensional van der Waals (vdW) heterostructures, these techniques have been limited to optical characterization and extremely simple electrical device geometries. Here, we report a piezoelectric-based \textit{in situ} uniaxial strain technique enabling simultaneous electrical transport and optical spectroscopy characterization of dual-gated vdW heterostructure devices. Critically, our technique remains compatible with vdW heterostructure devices of arbitrary complexity fabricated on conventional silicon/silicon dioxide wafer substrates. We demonstrate a large and continuously tunable strain of up to $-0.15\%$ at millikelvin temperatures, with larger strain values also likely achievable. We quantify the strain transmission from the silicon wafer to the vdW heterostructure, and further demonstrate the ability of strain to modify the electronic properties of twisted bilayer graphene. Our technique provides a highly versatile new method for exploring the effect of uniaxial strain on both the electrical and optical properties of vdW heterostructures, and can be easily extended to include additional characterization techniques.
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Submitted 23 May, 2024; v1 submitted 1 April, 2024;
originally announced April 2024.
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Quantum Oscillations Measurement of the Heavy Electron Mass near the van Hove Singularity in a Kagome Metal
Authors:
Elliott Rosenberg,
Jonathan DeStefano,
Yongbin Lee,
Chaowei Hu,
Yue Shi,
David Graf,
Shermane M. Benjamin,
Liqin Ke,
Jiun-Haw Chu
Abstract:
Kagome metals with the Fermi energy tuned near the van Hove singularities (vHss) have shown to host exotic phases including unconventional superconductivity and a chiral flux phase arising from a charge density wave. However, most quantum oscillations studies of the electronic structure of kagome metals focus on compounds which electronically or magnetically order, obscuring the unperturbed vHs. H…
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Kagome metals with the Fermi energy tuned near the van Hove singularities (vHss) have shown to host exotic phases including unconventional superconductivity and a chiral flux phase arising from a charge density wave. However, most quantum oscillations studies of the electronic structure of kagome metals focus on compounds which electronically or magnetically order, obscuring the unperturbed vHs. Here we present quantum oscillation measurements of YV$_6$Sn$_6$ which contains a pristine kagome lattice free from long range order. We discovered quantum oscillations corresponding to a large orbit ($\approx$70% of the Brillouin Zone area) with the heaviest mass ever observed in vanadium based kagome metals ($\approx3.3 m_e$), consistent with a Fermi pocket whose Fermi level is near the vHs. Comparing with first principles calculations suggests that the effective mass of this pocket is highly sensitive to the position of Fermi level. Our study establishes the enhanced density of states associated with a vHs in a kagome metal, allowing further insight into a potential driving mechanism for the unconventional electronic orderings in this class of materials.
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Submitted 26 January, 2024;
originally announced January 2024.
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Absence of Weyl nodes in EuCd$_2$As$_2$ revealed by the carrier density dependence of the anomalous Hall effect
Authors:
Yue Shi,
Zhaoyu Liu,
Logan A. Burnett,
Seokhyeong Lee,
Chaowei Hu,
Qianni Jiang,
Jiaqi Cai,
Xiaodong Xu,
Mo Li,
Cheng-Chien Chen,
Jiun-Haw Chu
Abstract:
The antiferromagnetic layered compound EuCd$_2$As$_2$ is widely considered as a leading candidate of ideal Weyl semimetal, featuring a single pair of Weyl nodes in its field-induced ferromagnetic (FM) state. Nevertheless, this view has recently been challenged by an optical spectroscopy study, which suggests that it is a magnetic semiconductor. In this study, we have successfully synthesized highl…
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The antiferromagnetic layered compound EuCd$_2$As$_2$ is widely considered as a leading candidate of ideal Weyl semimetal, featuring a single pair of Weyl nodes in its field-induced ferromagnetic (FM) state. Nevertheless, this view has recently been challenged by an optical spectroscopy study, which suggests that it is a magnetic semiconductor. In this study, we have successfully synthesized highly insulating EuCd$_2$As$_2$ crystals with carrier density reaching as low as $2\times 10^{15}$ $\text{cm}^{-3}$. The magneto-transport measurements revealed a progressive decrease of the anomalous Hall conductivity (AHC) by several orders of magnitude as the carrier density decreases. This behavior contradicts with what is expected from the intrinsic AHC generated by the Weyl points, which is independent of carrier density as the Fermi level approaches the charge neutrality point. In contrast, the scaling relationship between AHC and longitudinal conductivity aligns with the characteristics of variable range hopping insulators. Our results suggest that EuCd$_2$As$_2$ is a magnetic semiconductor rather than a topological Weyl semimetal.
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Submitted 27 February, 2024; v1 submitted 29 December, 2023;
originally announced January 2024.
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Non-Fermi liquid behavior in a correlated flatband pyrochlore lattice
Authors:
Jianwei Huang,
Lei Chen,
Yuefei Huang,
Chandan Setty,
Bin Gao,
Yue Shi,
Zhaoyu Liu,
Yichen Zhang,
Turgut Yilmaz,
Elio Vescovo,
Makoto Hashimoto,
Donghui Lu,
Boris I. Yakobson,
Pengcheng Dai,
Jiun-Haw Chu,
Qimiao Si,
Ming Yi
Abstract:
Electronic correlation effects are manifested in quantum materials when either the onsite Coulomb repulsion is large or the electron kinetic energy is small. The former is the dominant effect in the cuprate superconductors or heavy fermion systems while the latter in twisted bilayer graphene or geometrically frustrated metals. However, the simultaneous cooperation of both effects in the same quant…
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Electronic correlation effects are manifested in quantum materials when either the onsite Coulomb repulsion is large or the electron kinetic energy is small. The former is the dominant effect in the cuprate superconductors or heavy fermion systems while the latter in twisted bilayer graphene or geometrically frustrated metals. However, the simultaneous cooperation of both effects in the same quantum material--the design principle to produce a correlated topological flat bands pinned at the Fermi level--remains rare. Here, using angle-resolved photoemission spectroscopy, we report the observation of a flat band at the Fermi level in a 3$d$ pyrochlore metal CuV$_2$S$_4$. From a combination of first-principles calculations and slave-spin calculations, we understand the origin of this band to be a destructive quantum-interference effect associated with the V pyrochlore sublattice and further renormalization to the Fermi level by electron interactions in the partially filled V $t_{2g}$ orbitals. As a result, we find transport behavior that indicates a deviation from Fermi-liquid behavior as well as a large Sommerfeld coefficient. Our work demonstrates the pathway into correlated topology by constructing and pinning correlated flat bands near the Fermi level out of a pure $d$-electron system by the combined cooperation of local Coulomb interactions and geometric frustration in a pyrochlore lattice system.
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Submitted 2 November, 2023;
originally announced November 2023.
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Absence of $E_{2g}$ nematic instability and dominant $A_{1g}$ response in the kagome metal CsV$_3$Sb$_5$
Authors:
Zhaoyu Liu,
Yue Shi,
Qianni Jiang,
Elliott W. Rosenberg,
Jonathan M. DeStefano,
Jinjin Liu,
Chaowei Hu,
Yuzhou Zhao,
Zhiwei Wang,
Yugui Yao,
David Graf,
Pengcheng Dai,
Jihui Yang,
Xiaodong Xu,
Jiun-Haw Chu
Abstract:
Ever since the discovery of the charge density wave (CDW) transition in the kagome metal CsV$_3$Sb$_5$, the nature of its symmetry breaking is under intense debate. While evidence suggests that the rotational symmetry is already broken at the CDW transition temperature ($T_{\rm CDW}$), an additional electronic nematic instability well below $T_{\rm CDW}$ has been reported based on the diverging el…
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Ever since the discovery of the charge density wave (CDW) transition in the kagome metal CsV$_3$Sb$_5$, the nature of its symmetry breaking is under intense debate. While evidence suggests that the rotational symmetry is already broken at the CDW transition temperature ($T_{\rm CDW}$), an additional electronic nematic instability well below $T_{\rm CDW}$ has been reported based on the diverging elastoresistivity coefficient in the anisotropic channel ($m_{E_{2g}}$). Verifying the existence of a nematic transition below $T_{\rm CDW}$ is not only critical for establishing the correct description of the CDW order parameter, but also important for understanding low-temperature superconductivity. Here, we report elastoresistivity measurements of CsV$_3$Sb$_5$ using three different techniques probing both isotropic and anisotropic symmetry channels. Contrary to previous reports, we find the anisotropic elastoresistivity coefficient $m_{E_{2g}}$ is temperature-independent, except for a step jump at $T_{\rm CDW}$. The absence of nematic fluctuations is further substantiated by measurements of the elastocaloric effect, which show no enhancement associated with nematic susceptibility. On the other hand, the symmetric elastoresistivity coefficient $m_{A_{1g}}$ increases below $T_{\rm CDW}$, reaching a peak value of 90 at $T^* = 20$ K. Our results strongly indicate that the phase transition at $T^*$ is not nematic in nature and the previously reported diverging elastoresistivity is due to the contamination from the $A_{1g}$ channel.
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Submitted 1 July, 2024; v1 submitted 25 September, 2023;
originally announced September 2023.
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Observation of flat and weakly dispersing bands in a van der Waals semiconductor Nb3Br8 with breathing kagome lattice
Authors:
Sabin Regmi,
Anup Pradhan Sakhya,
Tharindu Fernando,
Yuzhou Zhao,
Dylan Jeff,
Milo Sprague,
Favian Gonzalez,
Iftakhar Bin Elius,
Mazharul Islam Mondal,
Nathan Valadez,
Damani Jarrett,
Alexis Agosto,
Jihui Yang,
Jiun-Haw Chu,
Saiful I. Khondaker,
Xiaodong Xu,
Ting Cao,
Madhab Neupane
Abstract:
Niobium halides, Nb3X8 (X = Cl,Br,I), which are predicted two-dimensional magnets, have recently gotten attention due to their breathing kagome geometry. Here, we have studied the electronic structure of Nb3Br8 by using angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. ARPES results depict the presence of multiple flat and weakly dispersing bands. These bands are…
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Niobium halides, Nb3X8 (X = Cl,Br,I), which are predicted two-dimensional magnets, have recently gotten attention due to their breathing kagome geometry. Here, we have studied the electronic structure of Nb3Br8 by using angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. ARPES results depict the presence of multiple flat and weakly dispersing bands. These bands are well explained by the theoretical calculations, which show they have Nb d character indicating their origination from the Nb atoms forming the breathing kagome plane. This van der Waals material can be easily thinned down via mechanical exfoliation to the ultrathin limit and such ultrathin samples are stable as depicted from the time-dependent Raman spectroscopy measurements at room temperature. These results demonstrate that Nb3Br8 is an excellent material not only for studying breathing kagome induced flat band physics and its connection with magnetism, but also for heterostructure fabrication for application purposes.
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Submitted 9 September, 2023;
originally announced September 2023.
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Strain Tuning Three-state Potts Nematicity in a Correlated Antiferromagnet
Authors:
Kyle Hwangbo,
Elliott Rosenberg,
John Cenker,
Qianni Jiang,
Haidan Wen,
Di Xiao,
Jiun-Haw Chu,
Xiaodong Xu
Abstract:
Electronic nematicity, a state in which rotational symmetry is spontaneously broken, has become a familiar characteristic of many strongly correlated materials. One widely studied example is the discovered Ising-nematicity and its interplay with superconductivity in tetragonal iron pnictides. Since nematic directors in crystalline solids are restricted by the underlying crystal symmetry, recently…
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Electronic nematicity, a state in which rotational symmetry is spontaneously broken, has become a familiar characteristic of many strongly correlated materials. One widely studied example is the discovered Ising-nematicity and its interplay with superconductivity in tetragonal iron pnictides. Since nematic directors in crystalline solids are restricted by the underlying crystal symmetry, recently identified quantum material systems with three-fold rotational (C$_3$) symmetry offer a new platform to investigate nematic order with three-state Potts character. Here, we report reversible strain control of the three-state Potts nematicity in a zigzag antiferromagnetic insulator, FePSe$_3$. Probing the nematicity via optical linear dichroism, we demonstrate either $2π/3$ or $π/2$ rotation of nematic director by uniaxial strain. The nature of the nematic phase transition can also be controlled such that it undergoes a smooth crossover transition, a Potts nematic transition, or a Ising nematic flop transition. Further elastocaloric measurements demonstrate signatures of two coupled phase transitions, indicating that the nematic phase is a vestigial order arose from the antiferromagnetism. The ability to tune the nematic order with in-situ strain further enables the extraction of nematic susceptibility, which exhibits a divergent behavior near the magnetic ordering temperature that is corroborated with both linear dichroism and elastocaloric measurements. Our work points to an active control approach to manipulate and explore nematicity in three-state Potts correlated materials.
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Submitted 17 January, 2024; v1 submitted 16 August, 2023;
originally announced August 2023.
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Observation of Fractionally Quantized Anomalous Hall Effect
Authors:
Heonjoon Park,
Jiaqi Cai,
Eric Anderson,
Yinong Zhang,
Jiayi Zhu,
Xiaoyu Liu,
Chong Wang,
William Holtzmann,
Chaowei Hu,
Zhaoyu Liu,
Takashi Taniguchi,
Kenji Watanabe,
Jiun-haw Chu,
Ting Cao,
Liang Fu,
Wang Yao,
Cui-Zu Chang,
David Cobden,
Di Xiao,
Xiaodong Xu
Abstract:
The integer quantum anomalous Hall (QAH) effect is a lattice analog of the quantum Hall effect at zero magnetic field. This striking transport phenomenon occurs in electronic systems with topologically nontrivial bands and spontaneous time-reversal symmetry breaking. Discovery of its putative fractional counterpart in the presence of strong electron correlations, i.e., the fractional quantum anoma…
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The integer quantum anomalous Hall (QAH) effect is a lattice analog of the quantum Hall effect at zero magnetic field. This striking transport phenomenon occurs in electronic systems with topologically nontrivial bands and spontaneous time-reversal symmetry breaking. Discovery of its putative fractional counterpart in the presence of strong electron correlations, i.e., the fractional quantum anomalous Hall (FQAH) effect, would open a new chapter in condensed matter physics. Here, we report the direct observation of both integer and fractional QAH effects in electrical measurements on twisted bilayer MoTe$_2$. At zero magnetic field, near filling factor $ν= -1$ (one hole per moiré unit cell) we see an extended integer QAH plateau in the Hall resistance $R_\text{xy}$ that is quantized to $h/e^2 \pm 0.1 \%$ while the longitudinal resistance $R_\text{xx}$ vanishes. Remarkably, at $ν=-2/3$ and $-3/5$ we see plateau features in $R_\text{xy}$ at $3h/2e^2 \pm 1\%$ and $5h/3e^2 \pm 3\%$, respectively, while $R_\text{xx}$ remains small. All these features shift linearly in an applied magnetic field with slopes matching the corresponding Chern numbers $-1$, $-2/3$, and $-3/5$, precisely as expected for integer and fractional QAH states. In addition, at zero magnetic field, $R_\text{xy}$ is approximately $2h/e^2$ near half filling ($ν= -1/2$) and varies linearly as $ν$ is tuned. This behavior resembles that of the composite Fermi liquid in the half-filled lowest Landau level of a two-dimensional electron gas at high magnetic field. Direct observation of the FQAH and associated effects paves the way for researching charge fractionalization and anyonic statistics at zero magnetic field.
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Submitted 4 August, 2023;
originally announced August 2023.
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Reversible Non-Volatile Electronic Switching in a Near Room Temperature van der Waals Ferromagnet
Authors:
Han Wu,
Lei Chen,
Paul Malinowski,
Jianwei Huang,
Qinwen Deng,
Kirsty Scott,
Bo Gyu Jang,
Jacob P. C. Ruff,
Yu He,
Xiang Chen,
Chaowei Hu,
Ziqin Yue,
Ji Seop Oh,
Xiaokun Teng,
Yucheng Guo,
Mason Klemm,
Chuqiao Shi,
Yue Shi,
Chandan Setty,
Tyler Werner,
Makoto Hashimoto,
Donghui Lu,
T. Yilmaz,
Elio Vescovo,
Sung-Kwan Mo
, et al. (15 additional authors not shown)
Abstract:
The ability to reversibly toggle between two distinct states in a non-volatile method is important for information storage applications. Such devices have been realized for phase-change materials, which utilizes local heating methods to toggle between a crystalline and an amorphous state with distinct electrical properties. To expand such kind of switching between two topologically distinct phases…
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The ability to reversibly toggle between two distinct states in a non-volatile method is important for information storage applications. Such devices have been realized for phase-change materials, which utilizes local heating methods to toggle between a crystalline and an amorphous state with distinct electrical properties. To expand such kind of switching between two topologically distinct phases requires non-volatile switching between two crystalline phases with distinct symmetries. Here we report the observation of reversible and non-volatile switching between two stable and closely-related crystal structures with remarkably distinct electronic structures in the near room temperature van der Waals ferromagnet Fe$_{5-δ}$GeTe$_2$. From a combination of characterization techniques we show that the switching is enabled by the ordering and disordering of an Fe site vacancy that results in distinct crystalline symmetries of the two phases that can be controlled by a thermal annealing and quenching method. Furthermore, from symmetry analysis as well as first principle calculations, we provide understanding of the key distinction in the observed electronic structures of the two phases: topological nodal lines compatible with the preserved global inversion symmetry in the site-disordered phase, and flat bands resulting from quantum destructive interference on a bipartite crystaline lattice formed by the presence of the site order as well as the lifting of the topological degeneracy due to the broken inversion symmetry in the site-ordered phase. Our work not only reveals a rich variety of quantum phases emergent in the metallic van der Waals ferromagnets due to the presence of site ordering, but also demonstrates the potential of these highly tunable two-dimensional magnets for memory and spintronics applications.
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Submitted 6 July, 2023;
originally announced July 2023.
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Spectral Evidence for Local-Moment Ferromagnetism in van der Waals Metals Fe$_3$GaTe$_2$ and Fe$_3$GeTe$_2$
Authors:
Han Wu,
Chaowei Hu,
Yaofeng Xie,
Bo Gyu Jang,
Jianwei Huang,
Yucheng Guo,
Shan Wu,
Cheng Hu,
Ziqin Yue,
Yue Shi,
Zheng Ren,
T. Yilmaz,
Elio Vescovo,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Alexei Fedorov,
Jonathan Denlinger,
Christoph Klewe,
Padraic Shafer,
Donghui Lu,
Makoto Hashimoto,
Junichiro Kono,
Robert J. Birgeneau,
Xiaodong Xu
, et al. (4 additional authors not shown)
Abstract:
Magnetism in two-dimensional (2D) materials has attracted considerable attention recently for both fundamental understanding of magnetism and their tunability towards device applications. The isostructural Fe$_3$GeTe$_2$ and Fe$_3$GaTe$_2$ are two members of the Fe-based van der Waals (vdW) ferromagnet family, but exhibit very different Curie temperatures (T$_C$) of 210 K and 360 K, respectively.…
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Magnetism in two-dimensional (2D) materials has attracted considerable attention recently for both fundamental understanding of magnetism and their tunability towards device applications. The isostructural Fe$_3$GeTe$_2$ and Fe$_3$GaTe$_2$ are two members of the Fe-based van der Waals (vdW) ferromagnet family, but exhibit very different Curie temperatures (T$_C$) of 210 K and 360 K, respectively. Here, by using angle-resolved photoemission spectroscopy and density functional theory, we systematically compare the electronic structures of the two compounds. Qualitative similarities in the Fermi surface can be found between the two compounds, with expanded hole pockets in Fe$_3$GaTe$_2$ suggesting additional hole carriers compared to Fe$_3$GeTe$_2$. Interestingly, we observe no band shift in Fe$_3$GaTe$_2$ across its T$_C$ of 360 K, compared to a small shift in Fe$_3$GeTe$_2$ across its T$_C$ of 210 K. The weak temperature-dependent evolution strongly deviates from the expectations of an itinerant Stoner mechanism. Our results suggest that itinerant electrons have minimal contributions to the enhancement of T$_C$ in Fe$_3$GaTe$_2$ compared to Fe$_3$GeTe$_2$, and that the nature of ferromagnetism in these Fe-based vdW ferromagnets must be understood with considerations of the electron correlations.
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Submitted 2 December, 2023; v1 submitted 1 July, 2023;
originally announced July 2023.
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Strain-Switchable Field-Induced Superconductivity
Authors:
Joshua J. Sanchez,
Gilberto Fabbris,
Yongseong Choi,
Jonathan M. DeStefano,
Elliott Rosenberg,
Yue Shi,
Paul Malinowski,
Yina Huang,
Igor I. Mazin,
Jong-Woo Kim,
Jiun-Haw Chu,
Philip Ryan
Abstract:
Field-induced superconductivity is a rare phenomenon where an applied magnetic field enhances or induces superconductivity. This fascinating effect arises from a complex interplay between magnetism and superconductivity, and it offers the tantalizing technological possibility of an infinite magnetoresistance superconducting spin valve. Here, we demonstrate field-induced superconductivity at a reco…
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Field-induced superconductivity is a rare phenomenon where an applied magnetic field enhances or induces superconductivity. This fascinating effect arises from a complex interplay between magnetism and superconductivity, and it offers the tantalizing technological possibility of an infinite magnetoresistance superconducting spin valve. Here, we demonstrate field-induced superconductivity at a record-high temperature of T=9K in two samples of the ferromagnetic superconductor Eu(Fe$_{0.88}$Co$_{0.12}$)$_{2}$As$_{2}$. We combine tunable uniaxial stress and applied magnetic field to shift the temperature range of the zero-resistance state between 4K and 10K. We use x-ray diffraction and spectroscopy measurements under stress and field to demonstrate that stress tuning of the nematic order and field tuning of the ferromagnetism act as independent tuning knobs of the superconductivity. Finally, DFT calculations and analysis of the Eu dipole field reveal the electromagnetic mechanism of the field-induced superconductivity.
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Submitted 21 June, 2023;
originally announced June 2023.
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Raman Study of Layered Breathing Kagome Lattice Semiconductor Nb3Cl8
Authors:
Dylan A. Jeff,
Favian Gonzalez,
Kamal Harrison,
Yuzhou Zhao,
Tharindu Fernando,
Sabin Regmi,
Zhaoyu Liu,
Humberto R. Gutierrez,
Madhab Neupane,
Jihui Yang,
Jiun-Haw Chu,
Xiaodong Xu,
Ting Cao,
Saiful I. Khondaker
Abstract:
Niobium chloride (Nb3Cl8) is a layered 2D semiconducting material with many exotic properties including a breathing kagome lattice, a topological flat band in its band structure, and a crystal structure that undergoes a structural and magnetic phase transition at temperatures below 90 K. Despite being a remarkable material with fascinating new physics, the understanding of its phonon properties is…
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Niobium chloride (Nb3Cl8) is a layered 2D semiconducting material with many exotic properties including a breathing kagome lattice, a topological flat band in its band structure, and a crystal structure that undergoes a structural and magnetic phase transition at temperatures below 90 K. Despite being a remarkable material with fascinating new physics, the understanding of its phonon properties is at its infancy. In this study, we investigate the phonon dynamics of Nb3Cl8 in bulk and few layer flakes using polarized Raman spectroscopy and density functional theory (DFT) analysis to determine the material's vibrational modes, as well as their symmetrical representations and atomic displacements. We experimentally resolved 12 phonon modes, 5 of which are A1g modes while the remaining 7 are Eg modes, which is in strong agreement with our DFT calculation. Layer-dependent results suggest that the Raman peak positions are mostly insensitive to changes in layer thickness, while peak intensity and FWHM are affected. Raman measurements as a function of excitation wavelength (473-785 nm) show a significant increase of the peak intensities when using a 473 nm excitation source, suggesting a near resonant condition. Temperature-dependent Raman experiments carried out above and below the transition temperature did not show any change in the symmetries of the phonon modes, suggesting that the structural phase transition is likely from the high temperature P3m1 phase to the low-temperature R3m phase. Magneto-Raman measurements carried out at 140 and 2 K between -2 to 2 T show that the Raman modes are not magnetically coupled. Overall, our study presented here significantly advances the fundamental understanding of layered Nb3Cl8 material which can be further exploited for future applications.
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Submitted 25 October, 2023; v1 submitted 20 June, 2023;
originally announced June 2023.
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Pseudogap behavior in charge density wave kagome material ScV$_6$Sn$_6$ revealed by magnetotransport measurements
Authors:
Jonathan M. DeStefano,
Elliott Rosenberg,
Olivia Peek,
Yongbin Lee,
Zhaoyu Liu,
Qianni Jiang,
Liqin Ke,
Jiun-Haw Chu
Abstract:
Over the last few years, significant attention has been devoted to studying the kagome materials AV$_3$Sb$_5$ (A = K, Rb, Cs) due to their unconventional superconductivity and charge density wave (CDW) ordering. Recently ScV$_6$Sn$_6$ was found to host a CDW below $\approx$90K, and, like AV$_3$Sb$_5$, it contains a kagome lattice comprised only of V ions. Here we present a comprehensive magnetotra…
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Over the last few years, significant attention has been devoted to studying the kagome materials AV$_3$Sb$_5$ (A = K, Rb, Cs) due to their unconventional superconductivity and charge density wave (CDW) ordering. Recently ScV$_6$Sn$_6$ was found to host a CDW below $\approx$90K, and, like AV$_3$Sb$_5$, it contains a kagome lattice comprised only of V ions. Here we present a comprehensive magnetotransport study on ScV$_6$Sn$_6$. We discovered several anomalous transport phenomena above the CDW ordering temperature, including insulating behavior in interlayer resistivity, a strongly temperature-dependent Hall coefficient, and violation of Kohler's rule. All these anomalies can be consistently explained by a progressive decrease in carrier densities with decreasing temperature, suggesting the formation of a pseudogap. Our findings suggest that high-temperature CDW fluctuations play a significant role in determining the normal state electronic properties of ScV$_6$Sn$_6$.
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Submitted 16 June, 2023;
originally announced June 2023.
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Fermi Surface Evolution and Anomalous Hall Effect in an Ideal Type-II Weyl Semimetal
Authors:
Qianni Jiang,
Johanna C. Palmstrom,
John Singleton,
Shalinee Chikara,
David Graf,
Chong Wang,
Yue Shi,
Paul Malinowski,
Aaron Wang,
Zhong Lin,
Lingnan Shen,
Xiaodong Xu,
Di Xiao,
Jiun-Haw Chu
Abstract:
Weyl semimetals (WSMs) are three-dimensional topological materials that exhibit fascinating properties due to the presence of Weyl nodes in their band structure. However, existing WSMs discovered so far often possess multiple pairs of Weyl nodes, posing a challenge in disentangling the contributions to transport phenomena from different energy bands. To overcome this challenge, we have identified…
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Weyl semimetals (WSMs) are three-dimensional topological materials that exhibit fascinating properties due to the presence of Weyl nodes in their band structure. However, existing WSMs discovered so far often possess multiple pairs of Weyl nodes, posing a challenge in disentangling the contributions to transport phenomena from different energy bands. To overcome this challenge, we have identified field-induced ferromagnetic MnBi$_{2-x}$Sb$_{x}$Te$_{4}$ as an ideal type-II WSM with a single pair of Weyl nodes. By employing a combination of quantum oscillations and high-field Hall measurements, we have resolved the evolution of Fermi-surface sections as the Fermi level is tuned across the charge neutrality point, precisely matching the band structure of an ideal type-II WSM. Furthermore, the anomalous Hall conductivity exhibits a heartbeat-like behavior as the Fermi level is tuned across the Weyl nodes, a unique feature previously predicted for a type-II WSM. Our findings establish MnBi$_{2-x}$Sb$_{x}$Te$_{4}$ as an ideal platform for further investigation into Weyl physics.
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Submitted 14 June, 2023;
originally announced June 2023.
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Observation of momentum-dependent charge density wave gap in a layered antiferromagnet GdTe3
Authors:
Sabin Regmi,
Iftakhar Bin Elius,
Anup Pradhan Sakhya,
Dylan Jeff,
Milo Sprague,
Mazharul Islam Mondal,
Damani Jarrett,
Nathan Valadez,
Alexis Agosto,
Tetiana Romanova,
Jiun-Haw Chu,
Saiful I. Khondaker,
Andrzej Ptok,
Dariusz Kaczorowski,
Madhab Neupane
Abstract:
Charge density wave (CDW) ordering has been an important topic of study for a long time owing to its connection with other exotic phases such as superconductivity and magnetism. The RTe3 (R = rare-earth elements) family of materials provides a fertile ground to study the dynamics of CDW in van der Waals layered materials, and the presence of magnetism in these materials allows to explore the inter…
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Charge density wave (CDW) ordering has been an important topic of study for a long time owing to its connection with other exotic phases such as superconductivity and magnetism. The RTe3 (R = rare-earth elements) family of materials provides a fertile ground to study the dynamics of CDW in van der Waals layered materials, and the presence of magnetism in these materials allows to explore the interplay among CDW and long range magnetic ordering. Here, we have carried out a high-resolution angle-resolved photoemission spectroscopy (ARPES) study of a CDW material GdTe3, which is antiferromagnetic below 12 K, along with thermodynamic, electrical transport, magnetic, and Raman measurements. Our Raman spectroscopy measurements show the presence of CDW amplitude mode at room temperature, which remains prominent when the sample is thinned down to 4-layers by exfoliation. Our ARPES data show a two-fold symmetric Fermi surface with both gapped and ungapped regions indicative of the partial nesting. The gap is momentum dependent, maximum along G-Z and gradually decreases going towards G - M. Our study provides a platform to study the dynamics of CDW and its interaction with other physical orders in two- and three-dimensions.
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Submitted 1 November, 2023; v1 submitted 7 June, 2023;
originally announced June 2023.
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The discovery of three-dimensional Van Hove singularity
Authors:
Wenbin Wu,
Zeping Shi,
Mykhaylo Ozerov,
Yuhan Du,
Yuxiang Wang,
Xiao-Sheng Ni,
Xianghao Meng,
Xiangyu Jiang,
Guangyi Wang,
Congming Hao,
Xinyi Wang,
Pengcheng Zhang,
Chunhui Pan,
Haifeng Pan,
Zhenrong Sun,
Run Yang,
Yang Xu,
Yusheng Hou,
Zhongbo Yan,
Cheng Zhang,
Hai-Zhou Lu,
Junhao Chu,
Xiang Yuan
Abstract:
Arising from the extreme/saddle point in electronic bands, Van Hove singularity (VHS) manifests divergent density of states (DOS) and induces various new states of matter such as unconventional superconductivity. VHS is believed to exist in one and two dimensions, but rarely found in three dimension (3D). Here, we report the discovery of 3D VHS in a topological magnet EuCd2As2 by magneto-infrared…
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Arising from the extreme/saddle point in electronic bands, Van Hove singularity (VHS) manifests divergent density of states (DOS) and induces various new states of matter such as unconventional superconductivity. VHS is believed to exist in one and two dimensions, but rarely found in three dimension (3D). Here, we report the discovery of 3D VHS in a topological magnet EuCd2As2 by magneto-infrared spectroscopy. External magnetic fields effectively control the exchange interaction in EuCd2As2, and shift 3D Weyl bands continuously, leading to the modification of Fermi velocity and energy dispersion. Above the critical field, the 3D VHS forms and is evidenced by the abrupt emergence of inter-band transitions, which can be quantitatively described by the minimal model of Weyl semimetals. Three additional optical transitions are further predicted theoretically and verified in magneto-near-infrared spectra. Our results pave the way to exploring VHS in 3D systems and uncovering the coordination between electronic correlation and the topological phase.
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Submitted 13 March, 2024; v1 submitted 14 April, 2023;
originally announced April 2023.
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Thermal hysteretic behavior and negative magnetoresistance in an unusual charge-density-wave material EuTe4
Authors:
Q. Q. Zhang,
Y. Shi,
K. Y. Zhai,
W. X. Zhao,
X. Du,
J. S. Zhou,
X. Gu,
R. Z. Xu,
Y. D. Li,
Y. F. Guo,
Z. K. Liu,
C. Chen,
S. -K. Mo,
T. K. Kim,
C. Cacho,
J. W. Yu,
W. Li,
Y. L. Chen,
Jiun-Haw Chu,
L. X. Yang
Abstract:
EuTe4 is a newly-discovered van der Waals material exhibiting a novel charge-density wave (CDW) with a large thermal hysteresis in the resistivity and CDW gap. In this work, we systematically study the electronic structure and transport properties of EuTe4 using high-resolution angle-resolved photoemission spectroscopy (ARPES), magnetoresistance measurements, and scanning tunneling microscopy (STM…
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EuTe4 is a newly-discovered van der Waals material exhibiting a novel charge-density wave (CDW) with a large thermal hysteresis in the resistivity and CDW gap. In this work, we systematically study the electronic structure and transport properties of EuTe4 using high-resolution angle-resolved photoemission spectroscopy (ARPES), magnetoresistance measurements, and scanning tunneling microscopy (STM). We observe a CDW gap of about 200 meV at low temperatures that persists up to 400 K, suggesting that the CDW transition occurs at a much higher temperature. We observe a large thermal hysteretic behavior of the ARPES intensity near the Fermi level, consistent with the resistivity measurement. The hysteresis in the resistivity measurement does not change under a magnetic field up to 7 T, excluding the thermal magnetic hysteresis mechanism. Instead, the surface topography measured with STM shows surface domains with different CDW trimerization directions, which may be important for the thermal hysteretic behavior of EuTe4. Interestingly, we observe a large negative magnetoresistance at low temperatures that can be associated with the canting of magnetically ordered Eu spins. Our work shed light on the understanding of magnetic, transport, and electronic properties of EuTe4.
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Submitted 5 March, 2023;
originally announced March 2023.
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Nanoscale visualization and spectral fingerprints of the charge order in ScV6Sn6 distinct from other kagome metals
Authors:
Siyu Cheng,
Zheng Ren,
Hong Li,
Jiseop Oh,
Hengxin Tan,
Ganesh Pokharel,
Jonathan M. DeStefano,
Elliott Rosenberg,
Yucheng Guo,
Yichen Zhang,
Ziqin Yue,
Yongbin Lee,
Sergey Gorovikov,
Marta Zonno,
Makoto Hashimoto,
Donghui Lu,
Liqin Ke,
Federico Mazzola,
Junichiro Kono,
R. J. Birgeneau,
Jiun-Haw Chu,
Stephen D. Wilson,
Ziqiang Wang,
Binghai Yan,
Ming Yi
, et al. (1 additional authors not shown)
Abstract:
Charge density waves (CDWs) have been tied to a number of unusual phenomena in kagome metals, including rotation symmetry breaking, time-reversal symmetry breaking and superconductivity. The majority of the experiments thus far have focused on the CDW states in AV3Sb5 and FeGe, characterized by the 2a0 by 2a0 period. Recently, a bulk CDW phase (T* ~ 92 K) with a different wave length and orientati…
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Charge density waves (CDWs) have been tied to a number of unusual phenomena in kagome metals, including rotation symmetry breaking, time-reversal symmetry breaking and superconductivity. The majority of the experiments thus far have focused on the CDW states in AV3Sb5 and FeGe, characterized by the 2a0 by 2a0 period. Recently, a bulk CDW phase (T* ~ 92 K) with a different wave length and orientation has been reported in ScV6Sn6, as the first realization of a CDW state in the broad RM6X6 structure. Here, using a combination of scanning tunneling microscopy/spectroscopy and angle-resolved photoemission spectroscopy, we reveal the microscopic structure and the spectroscopic signatures of this charge ordering phase in ScV6Sn6. Differential conductance dI/dV spectra show a partial gap opening in the density-of-states of about 20 meV at the Fermi level. This is much smaller than the spectral gaps observed in AV3Sb5 and FeGe despite the comparable T* temperatures in these systems, suggesting substantially weaker coupling strength in ScV6Sn6. Surprisingly, despite the three-dimensional bulk nature of the charge order, we find that the charge modulation is only observed on the kagome termination. Temperature-dependent band structure evolution suggests a modulation of the surface states as a consequence of the emergent charge order, with an abrupt spectral weight shift below T* consistent with the first-order phase transition. The similarity of the electronic band structures of ScV6Sn6 and TbV6Sn6 (where charge ordering is absent), together with the first-principle calculations, suggests that charge ordering in ScV6Sn6 may not be primarily electronically driven. Interestingly, in contrast to the CDW state of cousin AV3Sb5, we find no evidence supporting rotation symmetry breaking. Our results reveal a distinctive nature of the charge ordering phase in ScV6Sn6 in comparison to other kagome metals.
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Submitted 23 February, 2023;
originally announced February 2023.
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Chirality selective magnon-phonon hybridization and magnon-induced chiral phonons in a layered zigzag antiferromagnet
Authors:
Jun Cui,
Emil Vinas Bostroem,
Mykhaylo Ozerov,
Fangliang Wu,
Qianni Jiang,
Jiun-Haw Chu,
Changcun Li,
Fucai Liu,
Xiaodong Xu,
Angel Rubio,
Qi Zhang
Abstract:
Two-dimensional (2D) magnetic systems possess versatile magnetic order and can host tunable magnons carrying spin angular momenta. Recent advances show angular momentum can also be carried by lattice vibrations in the form of chiral phonons. However, the interplay between magnons and chiral phonons as well as the details of chiral phonon formation in a magnetic system are yet to be explored. Here,…
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Two-dimensional (2D) magnetic systems possess versatile magnetic order and can host tunable magnons carrying spin angular momenta. Recent advances show angular momentum can also be carried by lattice vibrations in the form of chiral phonons. However, the interplay between magnons and chiral phonons as well as the details of chiral phonon formation in a magnetic system are yet to be explored. Here, we report the observation of magnon-induced chiral phonons and chirality selective magnon-phonon hybridization in a layered zigzag antiferromagnet (AFM) FePSe$_3$. With a combination of magneto-infrared and magneto-Raman spectroscopy, we observe chiral magnon polarons (chiMP), the new hybridized quasiparticles, at zero magnetic field. The hybridization gap reaches 0.25~meV and survives down to the quadrilayer limit. Via first principle calculations, we uncover a coherent coupling between AFM magnons and chiral phonons with parallel angular momenta, which arises from the underlying phonon and space group symmetries. This coupling lifts the chiral phonon degeneracy and gives rise to an unusual Raman circular polarization of the chiMP branches. The observation of coherent chiral spin-lattice excitations at zero magnetic field paves the way for angular momentum-based hybrid phononic and magnonic devices.
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Submitted 9 June, 2023; v1 submitted 21 February, 2023;
originally announced February 2023.
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Strain-programmable van der Waals magnetic tunnel junctions
Authors:
John Cenker,
Dmitry Ovchinnikov,
Harvey Yang,
Daniel G. Chica,
Catherine Zhu,
Jiaqi Cai,
Geoffrey Diederich,
Zhaoyu Liu,
Xiaoyang Zhu,
Xavier Roy,
Ting Cao,
Matthew W. Daniels,
Jiun-Haw Chu,
Di Xiao,
Xiaodong Xu
Abstract:
The magnetic tunnel junction (MTJ) is a backbone device for spintronics. Realizing next generation energy efficient MTJs will require operating mechanisms beyond the standard means of applying magnetic fields or large electrical currents. Here, we demonstrate a new concept for programmable MTJ operation via strain control of the magnetic states of CrSBr, a layered antiferromagnetic semiconductor u…
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The magnetic tunnel junction (MTJ) is a backbone device for spintronics. Realizing next generation energy efficient MTJs will require operating mechanisms beyond the standard means of applying magnetic fields or large electrical currents. Here, we demonstrate a new concept for programmable MTJ operation via strain control of the magnetic states of CrSBr, a layered antiferromagnetic semiconductor used as the tunnel barrier. Switching the CrSBr from antiferromagnetic to ferromagnetic order generates a giant tunneling magnetoresistance ratio without external magnetic field at temperatures up to ~ 140 K. When the static strain is set near the phase transition, applying small strain pulses leads to active flipping of layer magnetization with controlled layer number and thus magnetoresistance states. Further, finely adjusting the static strain to a critical value turns on stochastic switching between metastable states, with a strain-tunable sigmoidal response curve akin to the stochastic binary neuron. Our results highlight the potential of strain-programmable van der Waals MTJs towards spintronic applications, such as magnetic memory, random number generation, and probabilistic and neuromorphic computing.
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Submitted 9 January, 2023;
originally announced January 2023.
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Spin structure and dynamics of the topological semimetal Co$_{3}$Sn$_{2-x}$In$_{x}$S$_{2}$
Authors:
Kelly J. Neubauer,
Feng Ye,
Yue Shi,
Paul Malinowski,
Bin Gao,
Keith M. Taddei,
Philippe Bourges,
Alexandre Ivanov,
Jiun-Haw Chu,
Pengcheng Dai
Abstract:
The anomalous Hall effect (AHE), typically observed in ferromagnetic (FM) metals with broken time-reversal symmetry, depends on electronic and magnetic properties. In Co$_{3}$Sn$_{2-x}$In$_{x}$S$_{2}$, a giant AHE has been attributed to Berry curvature associated with the FM Weyl semimetal phase, yet recent studies report complicated magnetism. We use neutron scattering to determine the spin dynam…
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The anomalous Hall effect (AHE), typically observed in ferromagnetic (FM) metals with broken time-reversal symmetry, depends on electronic and magnetic properties. In Co$_{3}$Sn$_{2-x}$In$_{x}$S$_{2}$, a giant AHE has been attributed to Berry curvature associated with the FM Weyl semimetal phase, yet recent studies report complicated magnetism. We use neutron scattering to determine the spin dynamics and structures as a function of $x$ and provide a microscopic understanding of the AHE and magnetism interplay. Spin gap and stiffness indicate a contribution from Weyl fermions consistent with the AHE. The magnetic structure evolves from $c$-axis ferromagnetism at $x$ = 0 to a canted antiferromagnetic (AFM) structure with reduced $c$-axis moment and in-plane AFM order at $x$ = 0.12 and further reduced $c$-axis FM moment at $x$ = 0.3. Since noncollinear spins can induce non-zero Berry curvature in real space acting as a fictitious magnetic field, our results revealed another AHE contribution, establishing the impact of magnetism on transport.
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Submitted 15 November, 2022;
originally announced November 2022.
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Dynamical criticality of spin-shear coupling in van der Waals antiferromagnets
Authors:
Faran Zhou,
Kyle Hwangbo,
Qi Zhang,
Chong Wang,
Lingnan Shen,
Jiawei Zhang,
Qianni Jiang,
Alfred Zong,
Yifan Su,
Marc Zajac,
Youngjun Ahn,
Donald Walko,
Richard Schaller,
Jiun-Haw Chu,
Nuh Gedik,
Xiaodong Xu,
Di Xiao,
Haidan Wen
Abstract:
The interplay between a multitude of electronic, spin, and lattice degrees of freedom underlies the complex phase diagrams of quantum materials. Layer stacking in van der Waals (vdW) heterostructures is responsible for exotic electronic and magnetic properties, which inspires stacking control of two-dimensional magnetism. Beyond the interplay between stacking order and interlayer magnetism, we dis…
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The interplay between a multitude of electronic, spin, and lattice degrees of freedom underlies the complex phase diagrams of quantum materials. Layer stacking in van der Waals (vdW) heterostructures is responsible for exotic electronic and magnetic properties, which inspires stacking control of two-dimensional magnetism. Beyond the interplay between stacking order and interlayer magnetism, we discover a spin-shear coupling mechanism in which a subtle shear of the atomic layers can have a profound effect on the intralayer magnetic order in a family of vdW antiferromagnets. Using time-resolved x-ray diffraction and optical linear dichroism measurements, interlayer shear is identified as the primary structural degree of freedom that couples with magnetic order. The recovery times of both shear and magnetic order upon optical excitation diverge at the magnetic ordering temperature with the same critical exponent. The time-dependent Ginzburg-Landau theory shows that this concurrent critical slowing down arises from a linear coupling of the interlayer shear to the magnetic order, which is dictated by the broken mirror symmetry intrinsic to the monoclinic stacking. Our results highlight the importance of interlayer shear in ultrafast control of magnetic order via spin-mechanical coupling.
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Submitted 15 November, 2022;
originally announced November 2022.
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Intertwined magnetism and charge density wave order in kagome FeGe
Authors:
Xiaokun Teng,
Ji Seop Oh,
Hengxin Tan,
Lebing Chen,
Jianwei Huang,
Bin Gao,
Jia-Xin Yin,
Jiun-Haw Chu,
Makoto Hashimoto,
Donghui Lu,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Garrett E. Granroth,
Binghai Yan,
Robert J. Birgeneau,
Pengcheng Dai,
Ming Yi
Abstract:
Electron correlations often lead to emergent orders in quantum materials. Kagome lattice materials are emerging as an exciting platform for realizing quantum topology in the presence of electron correlations. This proposal stems from the key signatures of electronic structures associated with its lattice geometry: flat band induced by destructive interference of the electronic wavefunctions, topol…
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Electron correlations often lead to emergent orders in quantum materials. Kagome lattice materials are emerging as an exciting platform for realizing quantum topology in the presence of electron correlations. This proposal stems from the key signatures of electronic structures associated with its lattice geometry: flat band induced by destructive interference of the electronic wavefunctions, topological Dirac crossing, and a pair of van Hove singularities (vHSs). A plethora of correlated electronic phases have been discovered amongst kagome lattice materials, including magnetism, charge density wave (CDW), nematicity, and superconductivity. These materials can be largely organized into two types: those that host magnetism and those that host CDW order. Recently, a CDW order has been discovered in the magnetic kagome FeGe, providing a new platform for understanding the interplay between CDW and magnetism. Here, utilizing angle-resolved photoemission spectroscopy, we observe all three types of electronic signatures of the kagome lattice: flat bands, Dirac crossings, and vHSs. From both the observation of a temperature-dependent shift of the vHSs towards the Fermi level as well as guidance via first-principle calculations, we identify the presence of the vHSs near the Fermi level (EF) to be driven by the development of underlying magnetic exchange splitting. Furthermore, we show spectral evidence for the CDW order as gaps that open on the near-EF vHS bands, as well as evidence of electron-phonon coupling from a kink on the vHS band together with phonon hardening observed by inelastic neutron scattering. Our observation points to the magnetic interaction-driven band modification resulting in the formation of the CDW order, indicating an intertwined connection between the emergent magnetism and vHS charge order in this moderately-correlated kagome metal.
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Submitted 12 October, 2022;
originally announced October 2022.
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Giant superlinear power dependence of photocurrent based on layered Ta$_2$NiS$_5$ photodetector
Authors:
Xianghao Meng,
Yuhan Du,
Wenbin Wu,
Nesta Benno Joseph,
Xing Deng,
Jinjin Wang,
Jianwen Ma,
Zeping Shi,
Binglin Liu,
Yuanji Ma,
Fangyu Yue,
Ni Zhong,
Ping-Hua Xiang,
Cheng Zhang,
Chun-Gang Duan,
Awadhesh Narayan,
Zhenrong Sun,
Junhao Chu,
Xiang Yuan
Abstract:
Photodetector based on two-dimensional (2D) materials is an ongoing quest in optoelectronics. These 2D photodetectors are generally efficient at low illuminating power but suffer severe recombination processes at high power, which results in the sublinear power dependence of photoresponse and lower optoelectronic efficiency. The desirable superlinear photocurrent is mostly achieved by sophisticate…
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Photodetector based on two-dimensional (2D) materials is an ongoing quest in optoelectronics. These 2D photodetectors are generally efficient at low illuminating power but suffer severe recombination processes at high power, which results in the sublinear power dependence of photoresponse and lower optoelectronic efficiency. The desirable superlinear photocurrent is mostly achieved by sophisticated 2D heterostructures or device arrays, while 2D materials rarely show intrinsic superlinear photoresponse. Here, we report the giant superlinear power dependence of photocurrent based on multi-layer Ta$_2$NiS$_5$. While the fabricated photodetector exhibits good sensitivity ($3.1 mS/W$ per square) and fast photoresponse ($31 μ$$s$), the bias-, polarization-, and spatial-resolved measurements point to an intrinsic photoconductive mechanism. By increasing the incident power density from $1.5 μ$W/$μ$$m^{2}$ to $200 μ$W/$μ$$m^{2}$, the photocurrent power dependence varies from sublinear to superlinear. At higher illuminating conditions, a prominent superlinearity is observed with a giant power exponent of $γ=1.5$. The unusual photoresponse can be explained by a two-recombination-center model where the distinct density of states of the recombination centers effectively closes all recombination channels. The fabricated photodetector is integrated into camera for taking photos with enhanced contrast due to the superlinearity. Our work provides an effective route to enable higher optoelectronic efficiency at extreme conditions.
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Submitted 17 April, 2023; v1 submitted 27 August, 2022;
originally announced August 2022.
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p x n-Type Transverse Thermoelectrics in a Type-II Weyl Semimetal TaIrTe4
Authors:
Josh Mutch,
Wei-Chih Chen,
Cheng-Yi Huang,
Paul Malinowski,
Cheng-Chien Chen,
Jiun-Haw Chu
Abstract:
p x n-type materials refer to materials with a p-type Seebeck coefficient in one direction and a n-type coefficient in the orthogonal direction. This type of materials allows for a transverse thermoelectric response, which is highly desirable for energy applications. Here, we report the observation of p x n-type behavior in TaIrTe4, a type-II Weyl semimetal, with an in-plane thermopower anisotropy…
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p x n-type materials refer to materials with a p-type Seebeck coefficient in one direction and a n-type coefficient in the orthogonal direction. This type of materials allows for a transverse thermoelectric response, which is highly desirable for energy applications. Here, we report the observation of p x n-type behavior in TaIrTe4, a type-II Weyl semimetal, with an in-plane thermopower anisotropy S$_{xx}$-S$_{yy}$ reaches a maximum value 40$μ$V/K at 200K. Intriguingly. we found that such a p x n-type behavior is absent in the similar compound NbIrTe4. The presence and absence of p x n-type behavior in these two materials are consistent with density functional theory calculations, which further predict that the thermopower anisotropy in both compounds can be enhanced up to 130$μ$V/K by electron doping. Such a strong thermopower anisotropy originates from the presence of both p-type and n-type carriers, each with high mobility in one direction. These results suggest that although type-II Weyl semimetal phase does not guarantee the existence of p x n-type behavior, its unique band structure provides the ingredient to engineer and optimize this phenomenon.
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Submitted 27 July, 2022;
originally announced July 2022.
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Unconventional Charge-density-wave Order in a Dilute d-band Semiconductor
Authors:
Huandong Chen,
Batyr Ilyas,
Boyang Zhao,
Emre Ergecen,
Josh Mutch,
Gwan Yeong Jung,
Qian Song,
Connor A. Occhialini,
Guodong Ren,
Sara Shabani,
Eric Seewald,
Shanyuan Niu,
Jiangbin Wu,
Nan Wang,
Mythili Surendran,
Shantanu Singh,
Jiang Luo,
Sanae Ohtomo,
Gemma Goh,
Bryan C. Chakoumakos,
Simon J. Teat,
Brent Melot,
Han Wang,
Di Xiao,
Abhay N. Pasupathy
, et al. (5 additional authors not shown)
Abstract:
Electron-lattice coupling effects in low dimensional materials give rise to charge density wave (CDW) order and phase transitions. These phenomena are critical ingredients for superconductivity and predominantly occur in metallic model systems such as doped cuprates, transition metal dichalcogenides, and more recently, in Kagome lattice materials. However, CDW in semiconducting systems, specifical…
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Electron-lattice coupling effects in low dimensional materials give rise to charge density wave (CDW) order and phase transitions. These phenomena are critical ingredients for superconductivity and predominantly occur in metallic model systems such as doped cuprates, transition metal dichalcogenides, and more recently, in Kagome lattice materials. However, CDW in semiconducting systems, specifically at the limit of low carrier concentration region, is uncommon. Here, we combine electrical transport, synchrotron X-ray diffraction and optical spectroscopy to discover CDW order in a quasi-one-dimensional (1D), dilute d-band semiconductor, BaTiS3, which suggests the existence of strong electron-phonon coupling. The CDW state further undergoes an unusual transition featuring a sharp increase in carrier mobility. Our work establishes BaTiS3 as a unique platform to study the CDW physics in the dilute filling limit to explore novel electronic phases.
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Submitted 23 July, 2022;
originally announced July 2022.
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Gate-tunable proximity effects in graphene on layered magnetic insulators
Authors:
Chun-Chih Tseng,
Tiancheng Song,
Qianni Jiang,
Zhong Lin,
Chong Wang,
Jaehyun Suh,
Kenji Watanabe,
Takashi Taniguchi,
Michael A. McGuire,
Di Xiao,
Jiun-Haw Chu,
David H. Cobden,
Xiaodong Xu,
Matthew Yankowitz
Abstract:
The extreme versatility of two-dimensional van der Waals (vdW) materials derives from their ability to exhibit new electronic properties when assembled in proximity with dissimilar crystals. For example, although graphene is inherently non-magnetic, recent work has reported a magnetic proximity effect in graphene interfaced with magnetic substrates, potentially enabling a pathway towards achieving…
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The extreme versatility of two-dimensional van der Waals (vdW) materials derives from their ability to exhibit new electronic properties when assembled in proximity with dissimilar crystals. For example, although graphene is inherently non-magnetic, recent work has reported a magnetic proximity effect in graphene interfaced with magnetic substrates, potentially enabling a pathway towards achieving a high-temperature quantum anomalous Hall effect. Here, we investigate heterostructures of graphene and chromium trihalide magnetic insulators (CrI$_3$, CrBr$_3$, and CrCl$_3$). Surprisingly, we are unable to detect a magnetic exchange field in the graphene, but instead discover proximity effects featuring unprecedented gate-tunability. The graphene becomes highly hole-doped due to charge transfer from the neighboring magnetic insulator, and further exhibits a variety of atypical transport features. These include highly extended quantum Hall plateaus, abrupt reversals in the Landau level filling sequence, and hysteresis over at least days-long time scales. In the case of CrI$_3$, we are able to completely suppress the charge transfer and all attendant atypical transport effects by gating. The charge transfer can additionally be altered in a first-order phase transition upon switching the magnetic states of the nearest CrI$_3$ layers. Our results provide a roadmap for exploiting the magnetic proximity effect in graphene, and motivate further experiments with other magnetic insulators.
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Submitted 14 June, 2022;
originally announced June 2022.
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Uniaxial ferromagnetism in the kagome metal TbV${_6}$Sn${_6}$
Authors:
Elliott Rosenberg,
Jonathan M. DeStefano,
Yucheng Guo,
Ji Seop Oh,
Makoto Hashimoto,
Donghui Lu,
Robert J. Birgeneau,
Yongbin Lee,
Liqin Ke,
Ming Yi,
Jiun-Haw Chu
Abstract:
The synthesis and characterization of the vanadium-based kagome metal TbV${_6}$Sn${_6}$ is presented. X-ray measurements confirm this material forms with the same crystal structure type as the recently investigated kagome metals GdV$_6$Sn$_6$ and YV$_6$Sn$_6$, with space group symmetry P6/mmm. A signature of a phase transition at 4.1K is observed in heat capacity, resistivity, and magnetic suscept…
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The synthesis and characterization of the vanadium-based kagome metal TbV${_6}$Sn${_6}$ is presented. X-ray measurements confirm this material forms with the same crystal structure type as the recently investigated kagome metals GdV$_6$Sn$_6$ and YV$_6$Sn$_6$, with space group symmetry P6/mmm. A signature of a phase transition at 4.1K is observed in heat capacity, resistivity, and magnetic susceptibility measurements, and both resistivity and magnetization measurements exhibit hysteresis in magnetic field. Furthermore, a strikingly large anisotropy in the magnetic susceptibility was observed, with the c-axis susceptibility nearly 100 times the ab plane susceptibility at 2K. This is highly suggestive of uniaxial ferromagnetism, and the large size of 9.4$μ_b$/f.u. indicates the Tb$^{3+}$ $4f$ electronic moments cooperatively align perpendicular to the V kagome lattice plane. The entropy at the phase transition is nearly Rln(2), indicating that the CEF ground state of the Tb$^{3+}$ ion is a doublet, and therefore the sublattice of $4f$ electrons in this material can be shown to map at low temperatures to the Ising model in a D$_{6h}$ symmetry environment. Hall measurements at temperatures from 300K to 1.7K can be described by two-band carrier transport at temperatures below around 150K, with a large increase in both hole and electron mobilities, similar to YV$_6$Sn$_6$, and an anomalous Hall effect is seen below the ordering temperature. Angle-resolved photoemission measurements above the magnetic ordering temperature reveal typical kagome dispersions. Our study presents TbV${_6}$Sn${_6}$ as an ideal system to study the interplay between Ising ferromagnetism and non-trivial electronic states emerging from a kagome lattice.
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Submitted 29 May, 2022;
originally announced May 2022.
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Controllable emergent spatial spin modulation in Sr2IrO4 by in situ shear strain
Authors:
S. Pandey,
H. Zhang,
J. Yang,
A. F. May,
J. Sanchez,
Z. Liu,
J. -H. Chu,
J. W. Kim,
P. J. Ryan,
H. D. Zhou,
J. Liu
Abstract:
Symmetric anisotropic interaction can be ferromagnetic and antiferromagnetic at the same time but for different crystallographic axes. We show that inducing competition of anisotropic interactions of orthogonal irreducible representations represents a general route to obtain new exotic magnetic states. We demonstrate it here by observing the emergence of a continuously tunable 12-layer spatial spi…
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Symmetric anisotropic interaction can be ferromagnetic and antiferromagnetic at the same time but for different crystallographic axes. We show that inducing competition of anisotropic interactions of orthogonal irreducible representations represents a general route to obtain new exotic magnetic states. We demonstrate it here by observing the emergence of a continuously tunable 12-layer spatial spin modulation when distorting the square lattice planes in the quasi-2D antiferromagnetic Sr2IrO4 under in situ shear strain. This translation-symmetry-breaking phase is a result of an unusual strain activated anisotropic interaction which is at the 4th order and competing with the inherent quadratic anisotropic interaction. Such a mechanism of competing anisotropy is distinct from that among the ferromagnetic, antiferromagnetic, and/or the Dzyaloshinskii-Moriya interactions, and it could be widely applicable and highly controllable in low dimensional magnets.
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Submitted 19 April, 2022;
originally announced April 2022.
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Discovery of charge density wave in a correlated kagome lattice antiferromagnet
Authors:
Xiaokun Teng,
Lebing Chen,
Feng Ye,
Elliott Rosenberg,
Zhaoyu Liu,
Jia-Xin Yin,
Yu-Xiao Jiang,
Ji Seop Oh,
M. Zahid Hasan,
Kelly J. Neubauer,
Bin Gao,
Yaofeng Xie,
Makoto Hashimoto,
Donghui Lu,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Robert J. Birgeneau,
Jiun-Haw Chu,
Ming Yi,
Pengcheng Dai
Abstract:
A hallmark of strongly correlated quantum materials is the rich phase diagram resulting from competing and intertwined phases with nearly degenerate ground state energies. A well-known example is the copper oxides, where a charge density wave (CDW) is ordered well above and strongly coupled to the magnetic order to form spin-charge separated stripes that compete with superconductivity. Recently, s…
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A hallmark of strongly correlated quantum materials is the rich phase diagram resulting from competing and intertwined phases with nearly degenerate ground state energies. A well-known example is the copper oxides, where a charge density wave (CDW) is ordered well above and strongly coupled to the magnetic order to form spin-charge separated stripes that compete with superconductivity. Recently, such rich phase diagrams have also been revealed in correlated topological materials. In two-dimensional kagome lattice metals consisting of corner-sharing triangles, the geometry of the lattice can produce flat bands with localized electrons, non-trivial topology, chiral magnetic order, superconductivity and CDW order. While CDW has been found in weakly electron correlated nonmagnetic AV3Sb5 (A = K, Rb, Cs), it has not yet been observed in correlated magnetic ordered kagome lattice metals. Here we report the discovery of CDW within the antiferromagnetic (AFM) ordered phase of kagome lattice FeGe. The CDW in FeGe occurs at wavevectors identical to that of AV3Sb5, enhances the AFM ordered moment, and induces an emergent anomalous Hall effect. Our findings suggest that CDW in FeGe arises from the combination of electron correlations-driven AFM order and van Hove singularities-driven instability possibly associated with a chiral flux phase, in stark contrast to strongly correlated copper oxides and nickelates, where the CDW precedes or accompanies the magnetic order.
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Submitted 22 March, 2022;
originally announced March 2022.
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Spectroscopic evidence of flat bands in breathing kagome semiconductor Nb3I8
Authors:
Sabin Regmi,
Tharindu Fernando,
Yuzhou Zhao,
Anup Pradhan Sakhya,
Gyanendra Dhakal,
Iftakhar Bin Elius,
Hector Vazquez,
Jonathan D Denlinger,
Jihui Yang,
Jiun-Haw Chu,
Xiaodong Xu,
Ting Cao,
Madhab Neupane
Abstract:
Kagome materials have become solid grounds to study the interplay among geometry, topology, correlation, and magnetism. Recently, semiconductors Nb3X8(X = Cl, Br, I) have been predicted to be two-dimensional (2D) magnets and importantly these materials possess breathing kagome geometry. Electronic structure study of these promising materials is still lacking. Here, we report the spectroscopic evid…
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Kagome materials have become solid grounds to study the interplay among geometry, topology, correlation, and magnetism. Recently, semiconductors Nb3X8(X = Cl, Br, I) have been predicted to be two-dimensional (2D) magnets and importantly these materials possess breathing kagome geometry. Electronic structure study of these promising materials is still lacking. Here, we report the spectroscopic evidence of at and weakly dispersing bands in breathing-kagome semiconductor Nb3I8 around 500 meV binding energy, which is well supported by our first-principles calculations. These bands originate from the breathing kagome lattice of Niobium atoms and have Nb d character. They are found to be sensitive to polarization of the incident photon beam. Our study provides insight into the electronic structure and at band topology in an exfoliable kagome semiconductor thereby providing an important platform to understand the interaction of geometry and electron correlations in 2D material.
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Submitted 21 December, 2022; v1 submitted 20 March, 2022;
originally announced March 2022.
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Anomalous Hall effect at half filling in twisted bilayer graphene
Authors:
Chun-Chih Tseng,
Xuetao Ma,
Zhaoyu Liu,
Kenji Watanabe,
Takashi Taniguchi,
Jiun-Haw Chu,
Matthew Yankowitz
Abstract:
Magic-angle twisted bilayer graphene (tBLG) has been studied extensively owing to its wealth of symmetry-broken phases, correlated Chern insulators, orbital magnetism, and superconductivity. In particular, the anomalous Hall effect (AHE) has been observed at odd integer filling factors ($ν=1$ and $3$) in a small number of tBLG devices, indicating the emergence of a zero-field orbital magnetic stat…
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Magic-angle twisted bilayer graphene (tBLG) has been studied extensively owing to its wealth of symmetry-broken phases, correlated Chern insulators, orbital magnetism, and superconductivity. In particular, the anomalous Hall effect (AHE) has been observed at odd integer filling factors ($ν=1$ and $3$) in a small number of tBLG devices, indicating the emergence of a zero-field orbital magnetic state with spontaneously broken time-reversal symmetry. However, the AHE is typically not anticipated at half filling ($ν=2$) owing to competing intervalley coherent states, as well as spin-polarized and valley Hall states that are favored by an intervalley Hund's coupling. Here, we present measurements of two tBLG devices with twist angles slightly away from the magic angle (0.96$^{\circ}$ and 1.20$^{\circ}$), in which we report the surprising observation of the AHE at $ν=+2$ and $-2$, respectively. These findings imply that a valley-polarized phase can become the ground state at half filling in tBLG rotated slightly away from the magic angle. Our results reveal the emergence of an unexpected ground state in the intermediately-coupled regime ($U/W \sim 1$, where $U$ is the strength of Coulomb repulsion and $W$ is the bandwidth), in between the strongly-correlated insulator and weakly-correlated metal, highlighting the need to develop a more complete understanding of tBLG away from the strongly-coupled limit.
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Submitted 3 February, 2022;
originally announced February 2022.
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Topological Lifshitz transition and one-dimensional Weyl mode in HfTe5
Authors:
Wenbin Wu,
Zeping Shi,
Yuhan Du,
Yuxiang Wang,
Fang Qin,
Xianghao Meng,
Binglin Liu,
Yuanji Ma,
Zhongbo Yan,
Mykhaylo Ozerov,
Cheng Zhang,
Hai-Zhou Lu,
Junhao Chu,
Xiang Yuan
Abstract:
Landau band crossings typically stem from the intra-band evolution of electronic states in magnetic fields and enhance the interaction effect in their vicinity. Here in the extreme quantum limit of topological insulator HfTe5, we report the observation of a topological Lifshitz transition from inter-band Landau level crossings using magneto-infrared spectroscopy. By tracking the Landau level trans…
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Landau band crossings typically stem from the intra-band evolution of electronic states in magnetic fields and enhance the interaction effect in their vicinity. Here in the extreme quantum limit of topological insulator HfTe5, we report the observation of a topological Lifshitz transition from inter-band Landau level crossings using magneto-infrared spectroscopy. By tracking the Landau level transitions, we demonstrate that band inversion drives the zeroth Landau bands to cross with each other after 4.5 T and forms one-dimensional Weyl mode with fundamental gap persistently closed. The unusual reduction of the zeroth Landau level transition activity suggests a topological Lifshitz transition at 21 T which shifts the Weyl mode close to Fermi level. As a result, a broad and asymmetric absorption feature emerges due to the Pauli blocking effect in one dimension, along with a distinctive negative magneto-resistivity. Our results provide a strategy for realizing one-dimensional Weyl quasiparticles in bulk crystals.
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Submitted 23 September, 2022; v1 submitted 16 January, 2022;
originally announced January 2022.
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Correlation-Driven Electronic Reconstruction in FeTe$_{1-x}$Se$_x$
Authors:
Jianwei Huang,
Rong Yu,
Zhijun Xu,
Jian-Xin Zhu,
Ji Seop Oh,
Qianni Jiang,
Meng Wang,
Han Wu,
Tong Chen,
Jonathan D. Denlinger,
Sung-Kwan Mo,
Makoto Hashimoto,
Matteo Michiardi,
Tor M. Pedersen,
Sergey Gorovikov,
Sergey Zhdanovich,
Andrea Damascelli,
Genda Gu,
Pengcheng Dai,
Jiun-Haw Chu,
Donghui Lu,
Qimiao Si,
Robert J. Birgeneau,
Ming Yi
Abstract:
Electronic correlation is of fundamental importance to high temperature superconductivity. While the low energy electronic states in cuprates are dominantly affected by correlation effects across the phase diagram, observation of correlation-driven changes in fermiology amongst the iron-based superconductors remains rare. Here we present experimental evidence for a correlation-driven reconstructio…
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Electronic correlation is of fundamental importance to high temperature superconductivity. While the low energy electronic states in cuprates are dominantly affected by correlation effects across the phase diagram, observation of correlation-driven changes in fermiology amongst the iron-based superconductors remains rare. Here we present experimental evidence for a correlation-driven reconstruction of the Fermi surface tuned independently by two orthogonal axes of temperature and Se/Te ratio in the iron chalcogenide family FeTe$_{1-x}$Se$_x$. We demonstrate that this reconstruction is driven by the de-hybridization of a strongly renormalized $d_{xy}$ orbital with the remaining itinerant iron 3$d$ orbitals in the emergence of an orbital-selective Mott phase. Our observations are further supported by our theoretical calculations to be salient spectroscopic signatures of such a non-thermal evolution from a strongly correlated metallic phase into an orbital-selective Mott phase in $d_{xy}$ as Se concentration is reduced.
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Submitted 7 January, 2022;
originally announced January 2022.