Showing 1–6 of 6 results for author: Chrostowski, L

Cryogenic Optical-to-Microwave Conversion Using Si Photonic Integrated Circuit Ge Photodiodes

Authors: D. Julien-Neitzert, E. Leung, N. Islam, S. Khorev, S. Shekhar, L. Chrostowski, Jeff F. Young, J. Salfi

Abstract: Integrated circuit technology enables the scaling of circuit complexity and functionality while maintaining manufacturability and reliability. Integration is expected to play an important role in quantum information technologies, including in the highly demanding task of producing the classical signals to control and measure quantum circuits at scales needed for fault-tolerant quantum computation.… ▽ More Integrated circuit technology enables the scaling of circuit complexity and functionality while maintaining manufacturability and reliability. Integration is expected to play an important role in quantum information technologies, including in the highly demanding task of producing the classical signals to control and measure quantum circuits at scales needed for fault-tolerant quantum computation. Here we experimentally characterize the cryogenic performance of a miniaturized photonic integrated circuit fabricated by a commercial foundry that down-converts classical optical signals to microwave signals. The circuit consists of waveguide-integrated germanium PIN photodiodes packaged using a scalable photonic wire bonding approach to a multi-channel optical fiber array that provides the optical excitation. We find the peak optical-to-microwave conversion response to be $\sim 150 \pm 13$ mA/W in the O-band at 4.2 K, well below the temperature the circuit was designed for and tested at in the past, for two different diode designs. The second diode design operates to over 6 GHz of 3 dB bandwidth making it suitable for controlling quantum circuits, with improvements in bandwidth and response expected from improved packaging. The demonstrated miniaturization and integration offers new perspectives for wavelength-division multiplexed control of microwave quantum circuits and scalable processors using light delivered by optical fiber arrays. △ Less

Submitted 24 October, 2024; originally announced October 2024.

Comments: 8 pages, 6 figures, 5 Supplementary Figures, accepted for publication in APL Photonics

Journal ref: APL Photonics 9, 116107 (2024)

Mid-infrared characterization of NbTiN superconducting nanowire single-photon detectors on silicon-on-insulator

Authors: Adan Azem, Dmitry V. Morozov, Daniel Kuznesof, Ciro Bruscino, Robert H. Hadfield, Lukas Chrostowski, Jeff F. Young

Abstract: Superconducting nanowire single-photon detectors are widely used for detecting individual photons across various wavelengths from ultraviolet to near-infrared range. Recently, there has been increasing interest in enhancing their sensitivity to single photons in the mid-infrared spectrum, driven by applications in quantum communication, spectroscopy and astrophysics. Here, we present our efforts t… ▽ More Superconducting nanowire single-photon detectors are widely used for detecting individual photons across various wavelengths from ultraviolet to near-infrared range. Recently, there has been increasing interest in enhancing their sensitivity to single photons in the mid-infrared spectrum, driven by applications in quantum communication, spectroscopy and astrophysics. Here, we present our efforts to expand the spectral detection capabilities of U-shaped NbTiN-based superconducting nanowire single-photon detectors, fabricated in a 2-wire configuration on a silicon-on-insulator substrate, into the mid-infrared range. We demonstrate saturated internal detection efficiency extending up to a wavelength of 3.5 μm for a 5 nm thick and 50 nm wide NbTiN nanowire with a dark count rate less than 10 counts per second at 0.9 K and a rapid recovery time of 4.3 ns. The detectors are engineered for integration on waveguides in a silicon-on-insulator platform for compact, multi-channel device applications. △ Less

Submitted 3 September, 2024; v1 submitted 28 August, 2024; originally announced August 2024.

Comments: 5 figures, 7 pages

Monolithically integrated 940 nm half VCSELs on bulk Ge substrates

Authors: Yunlong Zhao, Jia Guo, Markus Feifel, Hao-Tien Cheng, Yun-Cheng Yang, Lukas Chrostowski, David Lackner, Chao-Hsin Wu, Guangrui, Xia

Abstract: High quality n-type AlGaAs distributed Bragg reflectors (DBRs) and lnGaAs multiple quantum wells were successfully monolithically grown on 4-inch off-cut Ge (100) wafers. The grown structures have photoluminescence spectra and reflectance spectra comparable to those grown on conventional bulk GaAs wafers and have smooth morphology and reasonable uniformity. These results strongly support full VCSE… ▽ More High quality n-type AlGaAs distributed Bragg reflectors (DBRs) and lnGaAs multiple quantum wells were successfully monolithically grown on 4-inch off-cut Ge (100) wafers. The grown structures have photoluminescence spectra and reflectance spectra comparable to those grown on conventional bulk GaAs wafers and have smooth morphology and reasonable uniformity. These results strongly support full VCSEL growth and fabrication on larger-area bulk Ge substrates for the mass production of AlGaAs-based VCSELs. △ Less

Submitted 28 October, 2022; originally announced October 2022.

Comments: arXiv admin note: text overlap with arXiv:2201.04937

Study of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors on graded GaAsP/bulk Si substrates

Authors: Jia Guo, Yunlong Zhao, Markus Feifel, Hao-tien Cheng, Yun-cheng Yang, Lukas Chrostowski, David Lackner, Chao-hsin Wu, Guangrui, Xia

Abstract: We report the fabrication of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors (DBRs) on graded GaAsP/Si substrates. Low-density surface bumps and cross-hatch patterns were observed on the DBR surfaces. Cross-sectional DBR layers are smooth and flat. The reflectance spectra of the GaAsP/Si DBRs have lower intensities than the GaAs DBRs and have double peaks. Transfer matrix meth… ▽ More We report the fabrication of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors (DBRs) on graded GaAsP/Si substrates. Low-density surface bumps and cross-hatch patterns were observed on the DBR surfaces. Cross-sectional DBR layers are smooth and flat. The reflectance spectra of the GaAsP/Si DBRs have lower intensities than the GaAs DBRs and have double peaks. Transfer matrix method calculations, surface scratch and polishing tests were conducted, which suggest that the surface cross-hatch was the cause of the inferior DBR reflectance spectra. △ Less

Submitted 4 September, 2022; originally announced September 2022.

Monolithic integration of 940 nm AlGaAs distributed Bragg reflectors on bulk Ge substrates

Authors: Yunlong Zhao, Jia Guo, Markus Feifel, Hao-tien Cheng, Yun-cheng Yang, Liming Wang, Lukas Chrostowski, David Lackner, Chao-hsin Wu, Guangrui, Xia

Abstract: High quality 940 nm Al$_x$Ga$_{1-x}$As n-type distributed Bragg reflectors (DBRs) were successfully monolithically grown on off-cut Ge (100) substrates. The Ge-DBRs have reflectivity spectra comparable to those grown on conventional bulk GaAs substrates and have smooth morphology, reasonable periodicity and uniformity. These results strongly support VCSEL growth and fabrication on more scalable bu… ▽ More High quality 940 nm Al$_x$Ga$_{1-x}$As n-type distributed Bragg reflectors (DBRs) were successfully monolithically grown on off-cut Ge (100) substrates. The Ge-DBRs have reflectivity spectra comparable to those grown on conventional bulk GaAs substrates and have smooth morphology, reasonable periodicity and uniformity. These results strongly support VCSEL growth and fabrication on more scalable bulk Ge substrates for large scale production of AlGaAs-based VCSELs. △ Less

Submitted 22 December, 2021; originally announced January 2022.

Monolithic Integration of AlGaAs Distributed Bragg Reflectors on Virtual Ge Substrates via Aspect Ratio Trapping

Authors: Yiheng Lin, Wei Shi, Jizhong Li, Ting-Chang Chang, Ji-Soo Park, Jennifer Hydrick, Zigang Duan, Mark Greenberg, James G. Fiorenza, Lukas Chrostowski, Guangrui Xia

Abstract: High quality AlxGa1-xAs distributed Bragg reflectors (DBRs) were successfully monolithically grown on on-axis Si (100) substrates via a Ge layer formed by aspect ratio trapping (ART) technique. The GaAs/ART-Ge/Si-based DBRs have reflectivity spectra comparable to those grown on conventional bulk off-cut GaAs substrates and have smooth morphology, and good periodicity and uniformity. Anitphase doma… ▽ More High quality AlxGa1-xAs distributed Bragg reflectors (DBRs) were successfully monolithically grown on on-axis Si (100) substrates via a Ge layer formed by aspect ratio trapping (ART) technique. The GaAs/ART-Ge/Si-based DBRs have reflectivity spectra comparable to those grown on conventional bulk off-cut GaAs substrates and have smooth morphology, and good periodicity and uniformity. Anitphase domain formation is significantly reduced in GaAs on ART-Ge/Si substrates, and etch pit density of the GaAs base layer on the ART-Ge substrates ranges from 10^5 to 6 x 10^6 cm^(-2). These results paved the way for future VCSEL growth and fabrication on these ART-Ge substrates and also confirm that virtual Ge substrates via ART technique are effective Si platforms for optoelectronic integrated circuits. △ Less

Submitted 28 January, 2017; v1 submitted 15 January, 2016; originally announced January 2016.