Showing 1–29 of 29 results for author: Christensen, D

Metal-organic Pulsed Laser Deposition for Complex Oxide Heterostructures

Authors: Jung-Woo Lee, Jieun Kim, Anthony L. Edgeton, Tula R. Paudel, Neil Campbell, Brenton A. Noesges, Jonathon L. Schad, Jiangfeng Yang, Katelyn Wada, Jonathan Moreno-Ramirez, Nicholas Parker, Yulin Gan, Hyungwoo Lee, Dennis V. Christensen, Kitae Eom, Jong-Hoon Kang, Yunzhong Chen, Thomas Tybell, Nini Pryds, Dmitri A. Tenne, Leonard J. Brillson, Mark S. Rzchowski, Evgeny Y. Tsymbal, Chang-Beom Eom

Abstract: Point defects in complex oxide thin films play a critical role in determining material properties but remain challenging to control with precision. This study introduces metal-organic pulsed laser deposition (MOPLD) as a novel synthesis technique for the precise manipulation of these defects, using LaAlO3/SrTiO3 (LAO/STO) as a model system. By employing titanium tetraisopropoxide (TTIP) as the tit… ▽ More Point defects in complex oxide thin films play a critical role in determining material properties but remain challenging to control with precision. This study introduces metal-organic pulsed laser deposition (MOPLD) as a novel synthesis technique for the precise manipulation of these defects, using LaAlO3/SrTiO3 (LAO/STO) as a model system. By employing titanium tetraisopropoxide (TTIP) as the titanium precursor, MOPLD achieves refined stoichiometric control in STO layers while preserving their structural integrity, as confirmed by X-ray diffraction and Raman spectroscopy. Depth-resolved cathodoluminescence spectroscopy and density functional theory calculations reveal that increasing TTIP flux during STO growth enhances the [TiSr]/[VSr] ratio and reduces the [VO] concentration. These defect modifications lead to a significant improvement in the low-temperature mobility of the two-dimensional electron gas at the LAO/STO interface, evidenced by distinct Shubnikov-de Haas oscillations. This work underscores the potential of MOPLD to advance defect engineering in complex oxide heterostructures, opening new avenues for quantum material research. △ Less

Submitted 18 March, 2025; originally announced March 2025.

Alkali-metal vibrations in bcc, fcc, hcp, and 9R structures: Implications for the energetics of Li and Na martensitic phases

Authors: D. M. Riffe, Jake D. Christensen

Abstract: We present an embedded-atom-method (EAM) model that is specifically designed to accurately describe vibrations in bcc alkali metals. Using this model, we study bulk vibrational structure of Li, Na, K, and Rb when configured in bcc and the closed-packed (cp) fcc, hcp, and 9$R$ phases. From the vibrational density of states for each phase we thence find the corresponding vibrational contribution… ▽ More We present an embedded-atom-method (EAM) model that is specifically designed to accurately describe vibrations in bcc alkali metals. Using this model, we study bulk vibrational structure of Li, Na, K, and Rb when configured in bcc and the closed-packed (cp) fcc, hcp, and 9$R$ phases. From the vibrational density of states for each phase we thence find the corresponding vibrational contribution $A_{\rm vib}(T)$ to the Helmholtz free energy $A(T)$. Utilizing (i) differences in $A_{\rm vib}(T)$ between the bcc and cp structures and (ii) experimentally inferred thermodynamic transition temperatures for Li and Na (which martensitically transform from bcc to cp phases upon cooling), we extract values for zero-temperature energy differences between the bcc and relevant cp phases. We also put constraints on zero-temperature cp-bcc energy differences for K and Rb, which do not exhibit temperature induced transitions. △ Less

Submitted 13 June, 2024; originally announced June 2024.

Comments: 14 pages, 9 figures

2024 Roadmap on Magnetic Microscopy Techniques and Their Applications in Materials Science

Authors: D. V. Christensen, U. Staub, T. R. Devidas, B. Kalisky, K. C. Nowack, J. L. Webb, U. L. Andersen, A. Huck, D. A. Broadway, K. Wagner, P. Maletinsky, T. van der Sar, C. R. Du, A. Yacoby, D. Collomb, S. Bending, A. Oral, H. J. Hug, A. -O. Mandru, V. Neu, H. W. Schumacher, S. Sievers, H. Saito, A. A. Khajetoorians, N. Hauptmann , et al. (28 additional authors not shown)

Abstract: Considering the growing interest in magnetic materials for unconventional computing, data storage, and sensor applications, there is active research not only on material synthesis but also characterisation of their properties. In addition to structural and integral magnetic characterisations, imaging of magnetization patterns, current distributions and magnetic fields at nano- and microscale is of… ▽ More Considering the growing interest in magnetic materials for unconventional computing, data storage, and sensor applications, there is active research not only on material synthesis but also characterisation of their properties. In addition to structural and integral magnetic characterisations, imaging of magnetization patterns, current distributions and magnetic fields at nano- and microscale is of major importance to understand the material responses and qualify them for specific applications. In this roadmap, we aim to cover a broad portfolio of techniques to perform nano- and microscale magnetic imaging using SQUIDs, spin center and Hall effect magnetometries, scanning probe microscopies, x-ray- and electron-based methods as well as magnetooptics and nanoMRI. The roadmap is aimed as a single access point of information for experts in the field as well as the young generation of students outlining prospects of the development of magnetic imaging technologies for the upcoming decade with a focus on physics, materials science, and chemistry of planar, 3D and geometrically curved objects of different material classes including 2D materials, complex oxides, semi-metals, multiferroics, skyrmions, antiferromagnets, frustrated magnets, magnetic molecules/nanoparticles, ionic conductors, superconductors, spintronic and spinorbitronic materials. △ Less

Submitted 9 January, 2024; originally announced January 2024.

Visualizing thickness-dependent magnetic textures in few-layer $\text{Cr}_2\text{Ge}_2\text{Te}_6$

Authors: Andriani Vervelaki, Kousik Bagani, Daniel Jetter, Manh-Ha Doan, Tuan K. Chau, Boris Gross, Dennis Christensen, Peter Bøggild, Martino Poggio

Abstract: Magnetic ordering in two-dimensional (2D) materials has recently emerged as a promising platform for data storage, computing, and sensing. To advance these developments, it is vital to gain a detailed understanding of how the magnetic order evolves on the nanometer-scale as a function of the number of atomic layers and applied magnetic field. Here, we image few-layer… ▽ More Magnetic ordering in two-dimensional (2D) materials has recently emerged as a promising platform for data storage, computing, and sensing. To advance these developments, it is vital to gain a detailed understanding of how the magnetic order evolves on the nanometer-scale as a function of the number of atomic layers and applied magnetic field. Here, we image few-layer $\text{Cr}_2\text{Ge}_2\text{Te}_6$ using a combined scanning superconducting quantum interference device and atomic force microscopy probe. Maps of the material's stray magnetic field as a function of applied magnetic field reveal its magnetization per layer as well as the thickness-dependent magnetic texture. Using a micromagnetic model, we correlate measured stray-field patterns with the underlying magnetization configurations, including labyrinth domains and skyrmionic bubbles. Comparison between real-space images and simulations demonstrates that the layer dependence of the material's magnetic texture is a result of the thickness-dependent balance between crystalline and shape anisotropy. These findings represent an important step towards 2D spintronic devices with engineered spin configurations and controlled dependence on external magnetic fields. △ Less

Submitted 14 November, 2023; originally announced November 2023.

Comments: 15 pages, 4 figures, and supplementary information

Journal ref: Commun. Mater. 5, 40 (2024)

Extraordinary magnetometry -- a review on extraordinary magnetoresistance

Authors: Thierry Desire Pomar, Ricci Erlandsen, Bowen Zhou, Leonid Iliushyn, Rasmus Bjørk, Dennis Valbjørn Christensen

Abstract: Extraordinary magnetoresistance (EMR) is a geometric magnetoresistance effect occurring in hybrid devices consisting of a high-mobility material joined by a metal. The change in resistance can exceed 107% at room temperature when a magnetic field of 5 T is applied. Magnetic field sensors based on EMR hold the potential formeasuring weak magnetic fields with an unprecedented sensitivity, yet, to da… ▽ More Extraordinary magnetoresistance (EMR) is a geometric magnetoresistance effect occurring in hybrid devices consisting of a high-mobility material joined by a metal. The change in resistance can exceed 107% at room temperature when a magnetic field of 5 T is applied. Magnetic field sensors based on EMR hold the potential formeasuring weak magnetic fields with an unprecedented sensitivity, yet, to date this potential is largely unmet. In this work, we provide an extensive review of the current state-of-the-art in EMR sensors with a focus on the hybrid device geometries, the constituent material properties and applications of EMR. We present a direct comparison of the best devices in literature across magnetoresistance, sensitivity and noise equivalent field for different materials and geometric designs. The compilation of studies collected in this review illustrates the extremely rich possibilities for tuning the magnetoresistive behavior varying the device geometry and material properties. In addition, we aim to improve the understanding of the EMR effect and its interplay with geometry and material properties. Finally, we discuss recent trends in the field and future perspectives for EMR. △ Less

Submitted 8 November, 2022; originally announced November 2022.

Reconstruction of low dimensional electronic states by altering the chemical arrangement at the SrTiO3 surface

Authors: Hang Li, Walber H. Brito, Eduardo B. Guedes, Alla Chikina, Rasmus T. Dahm, Dennis V. Christensen, Shinhee Yun, Francesco M. Chiabrera, Nicholas C. Plumb, Ming Shi, Nini Pryds, Milan Radovic

Abstract: Developing reliable methods for modulating the electronic structure of the two-dimensional electron gas (2DEG) in SrTiO3 is crucial for utilizing its full potential and inducing novel properties. Here, we show that relatively simple surface preparation reconstructs the 2DEG of SrTiO3 (STO) surface, leading to a Lifshitz-like transition. Combining experimental methods, such as angle-resolved photoe… ▽ More Developing reliable methods for modulating the electronic structure of the two-dimensional electron gas (2DEG) in SrTiO3 is crucial for utilizing its full potential and inducing novel properties. Here, we show that relatively simple surface preparation reconstructs the 2DEG of SrTiO3 (STO) surface, leading to a Lifshitz-like transition. Combining experimental methods, such as angle-resolved photoemission spectroscopy (ARPES) and X-ray photoemission spectroscopy (XPS) with ab initio calculations, we find that the modulation of the surface band structures is primarily attributed to the reorganization of the chemical composition. In addition, ARPES experiments demonstrate that vacuum ultraviolet (VUV) light can be efficiently employed to alter the band renormalization of the 2DEG system and control the electron-phonon interaction (EPI). Our study provides a robust and straightforward route to stabilize and tune the low-dimensional electronic structure via the chemical degeneracy of the STO surface. △ Less

Submitted 10 August, 2022; originally announced August 2022.

Current Mapping of Amorphous LaAlO3/SrTiO3 near the Metal-Insulator Transition

Authors: Anders V. Bjørlig, Dennis V. Christensen, Ricci Erlandsen, Nini Pryds, Beena Kalisky

Abstract: The two-dimensional electron system found between LaAlO3 and SrTiO3 hosts a variety of physical phenomena that can be tuned through external stimuli. This allows for electronic devices controlling magnetism, spin-orbit coupling, and superconductivity. Controlling the electron density by varying donor concentrations and using electrostatic gating are convenient handles to modify the electronic prop… ▽ More The two-dimensional electron system found between LaAlO3 and SrTiO3 hosts a variety of physical phenomena that can be tuned through external stimuli. This allows for electronic devices controlling magnetism, spin-orbit coupling, and superconductivity. Controlling the electron density by varying donor concentrations and using electrostatic gating are convenient handles to modify the electronic properties, but the impact on the microscopic scale, particularly of the former, remains underexplored. Here, we image the current distribution at 4.2 K in amorphous-LaAlO3/SrTiO3 using scanning superconducting-quantum-interference-device microscopy while changing the carrier density in situ using electrostatic gating and oxygen annealing. We show how potential disorder affects the current and how homogeneous 2D flow evolves into several parallel conducting channels when approaching the metal-to-insulator transition. We link this to ferroelastic domains and oxygen vacancies. This has important consequences for micro- and nanoscale devices with low carrier density and fundamental studies on quantum effects in oxides. △ Less

Submitted 30 June, 2022; originally announced June 2022.

2022 Roadmap on Neuromorphic Computing and Engineering

Authors: Dennis V. Christensen, Regina Dittmann, Bernabé Linares-Barranco, Abu Sebastian, Manuel Le Gallo, Andrea Redaelli, Stefan Slesazeck, Thomas Mikolajick, Sabina Spiga, Stephan Menzel, Ilia Valov, Gianluca Milano, Carlo Ricciardi, Shi-Jun Liang, Feng Miao, Mario Lanza, Tyler J. Quill, Scott T. Keene, Alberto Salleo, Julie Grollier, Danijela Marković, Alice Mizrahi, Peng Yao, J. Joshua Yang, Giacomo Indiveri , et al. (34 additional authors not shown)

Abstract: Modern computation based on the von Neumann architecture is today a mature cutting-edge science. In the Von Neumann architecture, processing and memory units are implemented as separate blocks interchanging data intensively and continuously. This data transfer is responsible for a large part of the power consumption. The next generation computer technology is expected to solve problems at the exas… ▽ More Modern computation based on the von Neumann architecture is today a mature cutting-edge science. In the Von Neumann architecture, processing and memory units are implemented as separate blocks interchanging data intensively and continuously. This data transfer is responsible for a large part of the power consumption. The next generation computer technology is expected to solve problems at the exascale with 1018 calculations each second. Even though these future computers will be incredibly powerful, if they are based on von Neumann type architectures, they will consume between 20 and 30 megawatts of power and will not have intrinsic physically built-in capabilities to learn or deal with complex data as our brain does. These needs can be addressed by neuromorphic computing systems which are inspired by the biological concepts of the human brain. This new generation of computers has the potential to be used for the storage and processing of large amounts of digital information with much lower power consumption than conventional processors. Among their potential future applications, an important niche is moving the control from data centers to edge devices. The aim of this Roadmap is to present a snapshot of the present state of neuromorphic technology and provide an opinion on the challenges and opportunities that the future holds in the major areas of neuromorphic technology, namely materials, devices, neuromorphic circuits, neuromorphic algorithms, applications, and ethics. The Roadmap is a collection of perspectives where leading researchers in the neuromorphic community provide their own view about the current state and the future challenges. We hope that this Roadmap will be a useful resource to readers outside this field, for those who are just entering the field, and for those who are well established in the neuromorphic community. https://doi.org/10.1088/2634-4386/ac4a83 △ Less

Submitted 13 January, 2022; v1 submitted 12 May, 2021; originally announced May 2021.

Journal ref: Neuromorph. Comput. Eng. 2 022501 (2022)

Band-Order Anomaly at the γ-Al2O3/SrTiO3 Interface Drives the Electron-Mobility Boost

Authors: Alla Chikina, Dennis V. Christensen, Vladislav Borisov, Marius-Adrian Husanu, Yunzhong Chen, Xiaoqiang Wang, Thorsten Schmitt, Milan Radovic, Naoto Nagaosa, Andrey S. Mishchenko, Roser Valentí, Nini Pryds, Vladimir N. Strocov

Abstract: Rich functionalities of transition-metal oxides and their interfaces bear an enormous technological potential. Its realization in practical devices requires, however, a significant improvement of yet relatively low electron mobility in oxide materials. Recently, a mobility boost of about two orders of magnitude has been demonstrated at the spinel/perovskite γ-Al2O3/SrTiO3 interface compared to the… ▽ More Rich functionalities of transition-metal oxides and their interfaces bear an enormous technological potential. Its realization in practical devices requires, however, a significant improvement of yet relatively low electron mobility in oxide materials. Recently, a mobility boost of about two orders of magnitude has been demonstrated at the spinel/perovskite γ-Al2O3/SrTiO3 interface compared to the paradigm perovskite/perovskite LaAlO3/SrTiO3. We explore the fundamental physics behind this phenomenon from direct measurements of the momentum-resolved electronic structure of this interface using resonant soft-X-ray angle-resolved photoemission. We find an anomaly in orbital ordering of the mobile electrons in γ-Al2O3/SrTiO3 which depopulates electron states in the top STO layer. This rearrangement of the mobile electron system pushes the electron density away from the interface that reduces its overlap with the interfacial defects and weakens the electron-phonon interaction, both effects contributing to the mobility boost. A crystal-field analysis shows that the band order alters owing to the symmetry breaking between the spinel γ-Al2O3 and perovskite SrTiO3. The band-order engineering exploiting the fundamental symmetry properties emerges as another route to boost the performance of oxide devices. △ Less

Submitted 1 April, 2021; originally announced April 2021.

Self-formed $LaAlO_3/SrTiO_3$ Micro-Membranes

Authors: Alessia Sambri, Mario Scuderi, Anita Guarino, Emiliano Di Gennaro, Ricci Erlandsen, Rasmus T. Dahm, Anders V. Bjørlig, Dennis V. Christensen, Roberto Di Capua, Bartolomeo Della Ventura, Umberto Scotti di Uccio, Salvatore Mirabella, Giuseppe Nicotra, Corrado Spinella, Thomas S. Jespersen, Fabio Miletto Granozio

Abstract: Oxide heterostructures represent a unique playground for triggering the emergence of novel electronic states and for implementing new device concepts. The discovery of 2D conductivity at the $LaAlO_3/SrTiO_3$ interface has been linking for over a decade two of the major current research fields in Materials Science: correlated transition-metal-oxide systems and low-dimensional systems. A full mergi… ▽ More Oxide heterostructures represent a unique playground for triggering the emergence of novel electronic states and for implementing new device concepts. The discovery of 2D conductivity at the $LaAlO_3/SrTiO_3$ interface has been linking for over a decade two of the major current research fields in Materials Science: correlated transition-metal-oxide systems and low-dimensional systems. A full merging of these two fields requires nevertheless the realization of $LaAlO_3/SrTiO_3$ heterostructures in the form of freestanding membranes. Here we show a completely new method for obtaining oxide hetero-membranes with micrometer lateral dimensions. Unlike traditional thin-film-based techniques developed for semiconductors and recently extended to oxides, the concept we demonstrate does not rely on any sacrificial layer and is based instead on pure strain engineering. We monitor through both real-time and post-deposition analyses, performed at different stages of growth, the strain relaxation mechanism leading to the spontaneous formation of curved hetero-membranes. Detailed transmission electron microscopy investigations show that the membranes are fully epitaxial and that their curvature results in a huge strain gradient, each of the layers showing a mixed compressive/tensile strain state. Electronic devices are fabricated by realizing ad hoc circuits for individual micro-membranes transferred on silicon chips. Our samples exhibit metallic conductivity and electrostatic field effect similar to 2D-electron systems in bulk heterostructures. Our results open a new path for adding oxide functionality into semiconductor electronics, potentially allowing for ultra-low voltage gating of a superconducting transistors, micromechanical control of the 2D electron gas mediated by ferroelectricity and flexoelectricity, and on-chip straintronics. △ Less

Submitted 17 September, 2020; v1 submitted 15 September, 2020; originally announced September 2020.

Comments: 8 pages, 4 figures

Journal ref: First published: 11 September 2020 on Advanced Functional Materials

Gate-tunable Rashba spin-orbit coupling and spin polarization at diluted oxide interfaces

Authors: Yulin Gan, Yu Zhang, Dennis V. Christensen, Nini Pryds, Yunzhong Chen

Abstract: Diluted oxide interface of LaAl1-xMnxO/SrTiO3 (LAMO/STO) provides a new way of tuning the ground states of the interface between the two band insulators of LAO and STO from metallic/superconducting to highly insulating. Increasing the Mn doping level (x) leads to a delicate control of the carrier density as well as a raise in the electron mobility and spin polarization. Herein, we demonstrate a tu… ▽ More Diluted oxide interface of LaAl1-xMnxO/SrTiO3 (LAMO/STO) provides a new way of tuning the ground states of the interface between the two band insulators of LAO and STO from metallic/superconducting to highly insulating. Increasing the Mn doping level (x) leads to a delicate control of the carrier density as well as a raise in the electron mobility and spin polarization. Herein, we demonstrate a tunable Rashba spin-orbit coupling (SOC) and spin polarization of LAMO/STO (0.2 <= x <= 0.3) by applying a back gate. The presence of SOC causes the splitting of energy band into two branches by a spin splitting energy. The maximum spin splitting energy depends on the Mn doping and decreases with the increasing Mn content and then vanishes at x = 0.3. The carrier density dependence of the spin splitting energy for different compositions shows a dome-shaped behavior with a maximum at different normalized carrier density. These findings have not yet been observed in LAO/STO interfaces. A fully back-gate-tunable spin-polarized 2DEL is observed at the interface with x = 0.3 where only dxy orbits are populated (5.3E12 cm-2 <= ns <= 1.0E13 cm-2). The present results shed light on unexplored territory in SOC at STO-base oxide heterostructures and make LAMO/STO an intriguing platform for spin-related phenomena in 3d-electron systems. △ Less

Submitted 29 August, 2019; originally announced August 2019.

Comments: 5 figures, to be published in PRB

On the emergence of conductivity at SrTiO3-based oxide interfaces -- an in-situ study

Authors: Merlin von Soosten, Dennis Valbjørn Christensen, Chang-Beom Eom, Thomas Sand Jespersen, Yunzhong Chen, Nini Pryds

Abstract: Heterostructures and crystal interfaces play a major role in state-of-the-art semiconductor devices and play a central role in the field of oxide electronics. In oxides the link between the microscopic properties of the interfaces and bulk properties of the resulting heterostructures challenge our fundamental understanding. Insights on the early growth stage of interfaces and its influence on resu… ▽ More Heterostructures and crystal interfaces play a major role in state-of-the-art semiconductor devices and play a central role in the field of oxide electronics. In oxides the link between the microscopic properties of the interfaces and bulk properties of the resulting heterostructures challenge our fundamental understanding. Insights on the early growth stage of interfaces and its influence on resulting physical properties are scarce -- typically the information is inferred from post growth characterization. Here, we report on real time measurements of the transport properties of SrTiO3-based heterostructures while the crystal heterostructure is forming. Surprisingly, we detect a conducting interface already at the initial growth stage, much earlier than the well-established critical thickness limit for observing conductivity ex-situ after sample growth. We investigate how the conductivity depends on various physical processes occurring during pulsed laser depositions, including light illumination, particle bombardment by the plasma plume, interactions with the atmosphere and oxygen migration from SrTiO3 to the thin films of varying compositions. Using this approach, we propose a new design tool to control the electrical properties of interfaces in real time during their formation. △ Less

Submitted 23 August, 2019; originally announced August 2019.

Magnetic and electronic properties at the gamma-Al2O3/SrTiO3 interface

Authors: J. R. L. Mardegan, D. V. Christensen, Y. Z. Chen, S. Parchenko, S. R. V. Avula, N. Ortiz-Hernandez, M. Decker, C. Piamonteze, N. Pryds, U. Staub

Abstract: The magnetic and electronic nature of the gamma-Al2O3/SrTiO3 spinel/perovskite interface is explored by means of x-ray absorption spectroscopy. Polarized x-ray techniques combined with atomic multiplet calculations reveal localized magnetic moments assigned to Ti3+ at the interface with equivalent size for in- and out-of-plane magnetic field directions. Although magnetic fingerprints are revealed,… ▽ More The magnetic and electronic nature of the gamma-Al2O3/SrTiO3 spinel/perovskite interface is explored by means of x-ray absorption spectroscopy. Polarized x-ray techniques combined with atomic multiplet calculations reveal localized magnetic moments assigned to Ti3+ at the interface with equivalent size for in- and out-of-plane magnetic field directions. Although magnetic fingerprints are revealed, the Ti3+ magnetism can be explained by a paramagnetic response at low temperature under applied magnetic fields. Modeling the x-ray linear dichroism results in a delta0 = 1.9 eV splitting between the t2g and eg states for the Ti4+ 3d0 orbitals. In addition these results indicate that the lowest energy states have the out-of-plane dxz/dyz symmetry. The isotropic magnetic moment behavior and the lowest energy dxz/dyz states are in contrast to the observations for the two-dimensional electron gas at the perovskite/perovskite interface of LaAlO3/SrTiO3, that exhibits an anisotropic magnetic dxy ground state. △ Less

Submitted 28 January, 2019; originally announced January 2019.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. B 99, 134423 (2019)

Diluted Oxide Interfaces with Tunable Ground States

Authors: Yulin Gan, Dennis Valbjørn Christensen, Yu Zhang, Hongrui Zhang, Krishnan Dileep, Zhicheng Zhong, Wei Niu, Damon James Carrad, Kion Norrman, Merlin von Soosten, Thomas sand Jespersen, Baogen Shen, Nicolas Gauquelin, Johan Verbeeck, Jirong Sun, Nini Pryds, Yunzhong Chen

Abstract: The metallic interface between two oxide insulators, such as LaAlO3/SrTiO3 (LAO/STO), provides new opportunities for electronics and spintronics. However, due to the presence of multiple orbital populations, tailoring the interfacial properties such as the ground state and metal-insulator transitions remains challenging. Here, we report an unforeseen tunability of the phase diagram of LAO/STO by a… ▽ More The metallic interface between two oxide insulators, such as LaAlO3/SrTiO3 (LAO/STO), provides new opportunities for electronics and spintronics. However, due to the presence of multiple orbital populations, tailoring the interfacial properties such as the ground state and metal-insulator transitions remains challenging. Here, we report an unforeseen tunability of the phase diagram of LAO/STO by alloying LAO with a ferromagnetic LaMnO3 insulator without forming lattice disorder and at the same time without changing the polarity of the system. By increasing the Mn-doping level, x, of LaAl1-xMnxO3/STO, the interface undergoes a Lifshitz transition at x = 0.225 across a critical carrier density of nc= 2.8E13 cm-2, where a peak TSC =255 mK of superconducting transition temperature is observed. Moreover, the LaAl1-xMnxO3 turns ferromagnetic at x >=0.25. Remarkably, at x = 0.3, where the metallic interface is populated by only dxy electrons and just before it becomes insulating, we achieve reproducibly a same device with both signatures of superconductivity and clear anomalous Hall effect. This provides a unique and effective way to tailor oxide interfaces for designing on-demand electronic and spintronic devices. △ Less

Submitted 15 January, 2019; originally announced January 2019.

Comments: 18 pages and 6 figures

Journal ref: Adv. Mater. 2019

Vibrational Dynamics within the Embedded-Atom-Method Formalism and the Relationship to Born-von-Kármán Force Constants

Authors: D. M. Riffe, Jake D. Christensen, R. B. Wilson

Abstract: We derive expressions for the dynamical matrix of a crystalline solid with total potential energy described by an embedded-atom-method (EAM) potential. We make no assumptions regarding the number of atoms per unit cell. These equations can be used for calculating both bulk phonon modes as well the modes of a slab of material, which is useful for the study of surface phonons. We further discuss sim… ▽ More We derive expressions for the dynamical matrix of a crystalline solid with total potential energy described by an embedded-atom-method (EAM) potential. We make no assumptions regarding the number of atoms per unit cell. These equations can be used for calculating both bulk phonon modes as well the modes of a slab of material, which is useful for the study of surface phonons. We further discuss simplifications that occur in cubic lattices with one atom per unit cell. The relationship of Born-von-Kármán (BvK) force constants - which are readily extracted from experimental vibrational dispersion curves - to the EAM potential energy is discussed. In particular, we derive equations for BvK force constants for bcc and fcc lattices in terms of the functions that define an EAM model. The EAM - BvK relationship is useful for assessing the suitability of a particular EAM potential for describing vibrational spectra, which we illustrate using vibrational data from the bcc metals K and Fe and the fcc metal Au. △ Less

Submitted 13 June, 2018; v1 submitted 11 June, 2018; originally announced June 2018.

Comments: 15 pages, 3 figures, 2 tables

Journal ref: J. Phys.: Condens. Matter 30 (2018) 455702 (12pp)

Giant tunability of the two-dimensional electron gas at the interface of gamma-Al2O3/SrTiO3

Authors: W. Niu, Y. Zhang, Y. L. Gan, D. V. Christensen, M. V. Soosten, E. J. Garcia-Suarez, a. Riisager, X. Wang, Y. B. Xu, R. Zhang, N. Pryds, Y. Z. Chen

Abstract: Herein, we reported giant tunability of the physical properties of 2DEGs at the spinel/perovskite interface of γ-Al2O3/SrTiO3 (GAO/STO). By modulating the carrier density thus the band filling with ionic-liquid gating, the system experiences a Lifshitz transition at a critical carrier density of 3E13 cm-2, where a remarkably strong enhancement of Rashba spin-orbit interaction and an emergence of K… ▽ More Herein, we reported giant tunability of the physical properties of 2DEGs at the spinel/perovskite interface of γ-Al2O3/SrTiO3 (GAO/STO). By modulating the carrier density thus the band filling with ionic-liquid gating, the system experiences a Lifshitz transition at a critical carrier density of 3E13 cm-2, where a remarkably strong enhancement of Rashba spin-orbit interaction and an emergence of Kondo effect at low temperatures are observed. Moreover, as the carrier concentration depletes with decreasing gating voltage, the electron mobility is enhanced by more than 6 times in magnitude, leading to the observation of clear quantum oscillations. The great tunability of GAO/STO interface by EDLT gating not only shows promise for design of oxide devices with on-demand properties, but also sheds new light on the electronic structure of 2DEG at the non-isostructural spinel/perovskite interface. △ Less

Submitted 23 October, 2017; originally announced October 2017.

Comments: Nano Letters 2017

Microscopic origin of the mobility enhancement at a spinel/perovskite oxide heterointerface revealed by photoemission spectroscopy

Authors: P. Schütz, D. V. Christensen, V. Borisov, F. Pfaff, P. Scheiderer, L. Dudy, M. Zapf, J. Gabel, Y. Z. Chen, N. Pryds, V. A. Rogalev, V. N. Strocov, C. Schlueter, T. -L. Lee, H. O. Jeschke, R. Valentí, M. Sing, R. Claessen

Abstract: The spinel/perovskite heterointerface $γ$-Al$_2$O$_3$/SrTiO$_3$ hosts a two-dimensional electron system (2DES) with electron mobilities exceeding those in its all-perovskite counterpart LaAlO$_3$/SrTiO$_3$ by more than an order of magnitude despite the abundance of oxygen vacancies which act as electron donors as well as scattering sites. By means of resonant soft x-ray photoemission spectroscopy… ▽ More The spinel/perovskite heterointerface $γ$-Al$_2$O$_3$/SrTiO$_3$ hosts a two-dimensional electron system (2DES) with electron mobilities exceeding those in its all-perovskite counterpart LaAlO$_3$/SrTiO$_3$ by more than an order of magnitude despite the abundance of oxygen vacancies which act as electron donors as well as scattering sites. By means of resonant soft x-ray photoemission spectroscopy and \textit{ab initio} calculations we reveal the presence of a sharply localized type of oxygen vacancies at the very interface due to the local breaking of the perovskite symmetry. We explain the extraordinarily high mobilities by reduced scattering resulting from the preferential formation of interfacial oxygen vacancies and spatial separation of the resulting 2DES in deeper SrTiO$_3$ layers. Our findings comply with transport studies and pave the way towards defect engineering at interfaces of oxides with different crystal structures. △ Less

Submitted 16 October, 2017; originally announced October 2017.

Comments: Accepted as Rapid Communications in Physical Review B

Journal ref: Physical Review B (Rapid Communications), Vol. 96, p.161409(R), 2017

Suppressed carrier density for the patterned high mobility two-dimensional electron gas at gamma-Al2O3/SrTiO3 heterointerfaces

Authors: W. Niu, Y. L. Gan, Y. Zhang, D. V. Christensen, M. von Soosten, X. F. Wang, Y. B. Xu, R. Zhang, N. Pryds, Y. Z. Chen

Abstract: The two-dimensional electron gas (2DEG) at the non-isostructural interface between spinel gamma-Al2O3 and perovskite SrTiO3 is featured by a record electron mobility among complex oxide interfaces in addition to a high carrier density up to the order of 1E15 cm-2. Herein, we report on the patterning of 2DEG at the gamma-Al2O3/SrTiO3 interface grown at 650 °C by pulsed laser deposition using a hard… ▽ More The two-dimensional electron gas (2DEG) at the non-isostructural interface between spinel gamma-Al2O3 and perovskite SrTiO3 is featured by a record electron mobility among complex oxide interfaces in addition to a high carrier density up to the order of 1E15 cm-2. Herein, we report on the patterning of 2DEG at the gamma-Al2O3/SrTiO3 interface grown at 650 °C by pulsed laser deposition using a hard mask of LaMnO3. The patterned 2DEG exhibits a critical thickness of 2 unit cells of gamma-Al2O3 for the occurrence of interface conductivity, similar to the unpatterned sample. However, its maximum carrier density is found to be approximately 3E13 cm-2, much lower than that of the unpatterned sample (1E15 cm-2). Remarkably, a high electron mobility of approximately 3,600 cm2V-1s-1 was obtained at low temperatures for the patterned 2DEG at a carrier density of 7E12 cm-2, which exhibits clear Shubnikov-de Hass quantum oscillations. The patterned high-mobility 2DEG at the gamma-Al2O3/SrTiO3 interface paves the way for the design and application of spinel/perovskite interfaces for high-mobility all-oxide electronic devices. △ Less

Submitted 28 June, 2017; originally announced June 2017.

Comments: 4 figures

Universality of Electron Mobility in LaAlO$_3$/SrTiO$_3$ and bulk SrTiO$_3$

Authors: F. Trier, K. V. Reich, D. V. Christensen, Y. Zhang, H. L. Tuller, Y. Z. Chen, B. I. Shklovskii, N. Pryds

Abstract: Metallic LaAlO$_3$/SrTiO$_3$ (LAO/STO) interfaces attract enormous attention, but the relationship between the electron mobility and the sheet electron density, $n_s$, is poorly understood. Here we derive a simple expression for the three-dimensional electron density near the interface, $n_{3D}$, as a function of $n_s$ and find that the mobility for LAO/STO-based interfaces depends on $n_{3D}$ in… ▽ More Metallic LaAlO$_3$/SrTiO$_3$ (LAO/STO) interfaces attract enormous attention, but the relationship between the electron mobility and the sheet electron density, $n_s$, is poorly understood. Here we derive a simple expression for the three-dimensional electron density near the interface, $n_{3D}$, as a function of $n_s$ and find that the mobility for LAO/STO-based interfaces depends on $n_{3D}$ in the same way as it does for bulk doped STO. It is known that undoped bulk STO is strongly compensated with $N \simeq 5 \times 10^{18}~\rm{cm^{-3}}$ background donors and acceptors. In intentionally doped bulk STO with a concentration of electrons $n_{3D} < N$ background impurities determine the electron scattering. Thus, when $n_{3D} < N$ it is natural to see in LAO/STO the same mobility as in the bulk. On the other hand, in the bulk samples with $n_{3D} > N$ the mobility collapses because scattering happens on $n_{3D}$ intentionally introduced donors. For LAO/STO the polar catastrophe which provides electrons is not supposed to provide equal number of random donors and thus the mobility should be larger. The fact that the mobility is still the same implies that for the LAO/STO the polar catastrophe model should be revisited. △ Less

Submitted 4 September, 2017; v1 submitted 6 April, 2017; originally announced April 2017.

Comments: 4 pages and 1 figure

Journal ref: Applied Physics Letters 111, 092106 (2017)

Effect of Sr-doping of LaMnO3 spacer on modulation-doped two-dimensional electron gases at oxide interfaces

Authors: Y. Z. Chen, Y. L. Gan, D. V. Christensen, Y. Zhang, N. Pryds

Abstract: Modulation-doped oxide two-dimensional electron gas (2DEG) formed at the LaMnO3 (LMO) buffered disorderd-LaAlO3/SrTiO3 (d-LAO/LMO/STO) heterointerface, provides new opportunities for electronics as well as quantum physics. Herein, we studied the dependence of Sr-doping of La1-xSrxMnO3 (LSMO, x=0, 1/8, 1/3, 1/2, and 1) thus the filling of the Mn eg subbands as well as the LSMO polarity on the trans… ▽ More Modulation-doped oxide two-dimensional electron gas (2DEG) formed at the LaMnO3 (LMO) buffered disorderd-LaAlO3/SrTiO3 (d-LAO/LMO/STO) heterointerface, provides new opportunities for electronics as well as quantum physics. Herein, we studied the dependence of Sr-doping of La1-xSrxMnO3 (LSMO, x=0, 1/8, 1/3, 1/2, and 1) thus the filling of the Mn eg subbands as well as the LSMO polarity on the transport properties of d-LAO/LSMO/STO. Upon increasing the LSMO film thickness from 1 unit cell (uc) to 2 uc, a sharp metal to insulator transition of interface conduction was observed, independent of x. The resultant electron mobility is often higher than 1900 cm2V-1s-1 at 2 K, which increases upon decreasing x. The sheet carrier density, on the other hand, is in the range of 6.9E1012~1.8E1013 cm-2 (0.01~0.03 e/uc) and is largely independent on x for all the metallic d-LAO/LSMO (1 uc)/STO interfaces. These results are consistent with the charge transfer induced modulation doping scheme and clarify that the polarity of the buffer layer plays a trivial role on the modulation doping. The negligible tunability of the carrier density could result from the reduction of LSMO during the deposition of disordered LAO or that the energy levels of Mn 3d electrons at the interface of LSMO/STO are hardly varied even when changing the LSMO composition from LMO to SrMnO3. △ Less

Submitted 17 February, 2017; originally announced February 2017.

Comments: 14 pages, 4 figures, to be published in JAP, March 2017

Quantization of Hall Resistance at the Metallic Interface between an Oxide Insulator and SrTiO$_{3}$

Authors: Felix Trier, Guenevere E. D. K. Prawiroatmodjo, Zhicheng Zhong, Merlin von Soosten, Dennis Valbjørn Christensen, Arghya Bhowmik, Juan Maria García Lastra, Yunzhong Chen, Thomas Sand Jespersen, Nini Pryds

Abstract: The two-dimensional metal forming at the interface between an oxide insulator and SrTiO3 provides new opportunities for oxide electronics. However, the quantum Hall effect, one of the most fascinating effects of electrons confined in two dimensions, remains underexplored at these complex oxide heterointerfaces. Here, we report the experimental observation of quantized Hall resistance in a SrTiO3 h… ▽ More The two-dimensional metal forming at the interface between an oxide insulator and SrTiO3 provides new opportunities for oxide electronics. However, the quantum Hall effect, one of the most fascinating effects of electrons confined in two dimensions, remains underexplored at these complex oxide heterointerfaces. Here, we report the experimental observation of quantized Hall resistance in a SrTiO3 heterointerface based on the modulation-doped amorphous-LaAlO$_{3}$/SrTiO$_{3}$ heterostructure, which exhibits both high electron mobility exceeding 10000 cm$^{2}$/Vs and low carrier density on the order of ~10$^{12}$ cm$^{-2}$. Along with unambiguous Shubnikov-de Haas oscillations, the spacing of the quantized Hall resistance suggests that the interface is comprised of a single quantum well with ten parallel conducting two-dimensional subbands. This provides new insight into the electronic structure of conducting oxide interfaces and represents an important step towards designing and understanding advanced oxide devices. △ Less

Submitted 29 August, 2016; v1 submitted 9 March, 2016; originally announced March 2016.

Report number: NBI QDEV 2016

Journal ref: Phys. Rev. Lett. 117, 096804 (2016)

Patterning of high mobility electron gases at complex oxide interfaces

Authors: Felix Trier, Guenevere E. D. K. Prawiroatmodjo, Merlin von Soosten, Dennis Valbjørn Christensen, Thomas Sand Jespersen, Yunzhong Chen, Nini Pryds

Abstract: Oxide interfaces provide an opportunity for electronics. However, patterning of electron gases at complex oxide interfaces is challenging. In particular, patterning of complex oxides while preserving a high electron mobility remains underexplored and inhibits the study of quantum mechanical effects where extended electron mean free paths are paramount. This letter presents an effective patterning… ▽ More Oxide interfaces provide an opportunity for electronics. However, patterning of electron gases at complex oxide interfaces is challenging. In particular, patterning of complex oxides while preserving a high electron mobility remains underexplored and inhibits the study of quantum mechanical effects where extended electron mean free paths are paramount. This letter presents an effective patterning strategy of both the amorphous-LaAlO$_3$/SrTiO$_3$ (a-LAO/STO) and modulation-doped amorphous- LaAlO$_3$/La$_{7/8}$Sr$_{1/8}$MnO$_3$/SrTiO$_3$ (a-LAO/LSM/STO) oxide interfaces. Our patterning is based on selective wet etching of amorphous-LSM (a-LSM) thin films which acts as a hard mask during subsequent depositions. Strikingly, the patterned modulation-doped interface shows electron mobilities up to ~8,700 cm$^2$/Vs at 2 K, which is among the highest reported values for patterned conducting complex oxide interfaces that usually are ~1,000 cm$^2$/Vs at 2 K. △ Less

Submitted 21 January, 2016; originally announced January 2016.

Report number: NBI QDEV 2015

Journal ref: Applied Physics Letters 107, 191604 (2015)

Infrared ellipsometry study of the confined electrons in a high-mobility $γ$-Al$_2$O$_3$/SrTiO$_3$ heterostructure

Authors: Meghdad Yazdi-Rizi, Premysl Marsik, Benjamin Mallett, Adam Dubroka, Dennis Valbjørn Christensen, Yunzhong Chen, Nini Pryds, Christian Bernhard

Abstract: With infrared ellipsometry we studied the response of the confined electrons in a $γ$-Al$_2$O$_3$/SrTiO$_3$ heterostructures in which they originate predominantly from oxygen vacancies. From the analysis of a so-called Berreman mode, that develops near the highest longitudinal optical phonon mode of SrTiO$_3$, we derive the sheet carrier density, ${N_{s}}$, the mobility, $μ$, and also the depth pr… ▽ More With infrared ellipsometry we studied the response of the confined electrons in a $γ$-Al$_2$O$_3$/SrTiO$_3$ heterostructures in which they originate predominantly from oxygen vacancies. From the analysis of a so-called Berreman mode, that develops near the highest longitudinal optical phonon mode of SrTiO$_3$, we derive the sheet carrier density, ${N_{s}}$, the mobility, $μ$, and also the depth profile of the carrier concentration. Notably, we find that ${N_{s}}$ and the shape of the depth profile are similar as in LaAlO$_3$/SrTiO$_3$ heterostructures for which the itinerant carriers are believed to arise from a polar discontinuity. The main differences concern the higher mobility and a relatively stronger confinement of the electrons in $γ$-Al$_2$O$_3$/SrTiO$_3$ △ Less

Submitted 18 December, 2015; originally announced December 2015.

Comments: 12 pages, 2 figures

Journal ref: EPL 113 47005 (2016)

Evidence of weak superconductivity at the room-temperature grown LaAlO$_{3}$/SrTiO$_3$ interface

Authors: Guenevere E. D. K. Prawiroatmodjo, Felix Trier, Dennis V. Christensen, Yunzhong Chen, Nini Pryds, Thomas S. Jespersen

Abstract: The two-dimensional electron gas at the crystalline LaAlO$_{3}$/SrTiO$_{3}$ (c-LAO/STO) interface has sparked large interest due to its exotic properties including an intriguing gate-tunable superconducting phase. While there is growing evidence of pronounced spatial inhomogeneity in the conductivity at STO-based interfaces, the consequences for superconductivity remain largely unknown. We study i… ▽ More The two-dimensional electron gas at the crystalline LaAlO$_{3}$/SrTiO$_{3}$ (c-LAO/STO) interface has sparked large interest due to its exotic properties including an intriguing gate-tunable superconducting phase. While there is growing evidence of pronounced spatial inhomogeneity in the conductivity at STO-based interfaces, the consequences for superconductivity remain largely unknown. We study interfaces based on amorphous LAO top layers grown at room temperature (a-LAO/STO) and demonstrate a superconducting phase similar to c-LAO/STO, however, with a gate-tunable critical temperature of $460 \, \mathrm{mK}$, higher than any previously reported values for c-LAO/STO. The dependence of the superconducting critical current on temperature, magnetic field and backgate-controlled doping is found to be consistently described by a model of a random array of Josephson-coupled superconducting domains. △ Less

Submitted 26 April, 2016; v1 submitted 5 October, 2015; originally announced October 2015.

Comments: 6 pages, 5 figures

Report number: NBI QDEV 2016

Journal ref: Phys. Rev. B 93, 184504 (2016)

Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces via charge transfer induced modulation doping

Authors: Y. Z. Chen, F. Trier, T. Wijnands, R. J. Green, N. Gauquelin, R. Egoavil, D. V. Christensen, G. Koster, M. Huijben, N. Bovet, S. Macke, F. He, R. Sutarto, N. H. Andersen, G. E. D. K. Prawiroatmodjo, T. S. Jespersen, J. A. Sulpizio, M. Honig, S. Linderoth, S. Ilani, J. Verbeeck, G. Van Tendeloo, G. Rijnders, G. A. Sawatzky, N. Pryds

Abstract: The discovery of two-dimensional electron gases (2DEGs) at the interface between two insulating complex oxides, such as LaAlO3 (LAO) or gamma-Al2O3 (GAO) epitaxially grown on SrTiO3 (STO) 1,2, provides an opportunity for developing all-oxide electronic devices3,4. These 2DEGs at complex oxide interfaces involve many-body interactions and give rise to a rich set of phenomena5, for example, supercon… ▽ More The discovery of two-dimensional electron gases (2DEGs) at the interface between two insulating complex oxides, such as LaAlO3 (LAO) or gamma-Al2O3 (GAO) epitaxially grown on SrTiO3 (STO) 1,2, provides an opportunity for developing all-oxide electronic devices3,4. These 2DEGs at complex oxide interfaces involve many-body interactions and give rise to a rich set of phenomena5, for example, superconductivity6, magnetism7,8, tunable metal-insulator transitions9, and phase separation10. However, large enhancement of the interfacial electron mobility remains a major and long-standing challenge for fundamental as well as applied research of complex oxides11-15. Here, we inserted a single unit cell insulating layer of polar La1-xSrxMnO3 (x=0, 1/8, and 1/3) at the interface between disordered LaAlO3 and crystalline SrTiO3 created at room temperature. We find that the electron mobility of the interfacial 2DEG is enhanced by more than two orders of magnitude. Our in-situ and resonant x-ray spectroscopic in addition to transmission electron microscopy results indicate that the manganite layer undergoes unambiguous electronic reconstruction and leads to modulation doping of such atomically engineered complex oxide heterointerfaces. At low temperatures, the modulation-doped 2DEG exhibits clear Shubnikov-de Haas oscillations and the initial manifestation of the quantum Hall effect, demonstrating an unprecedented high-mobility and low electron density oxide 2DEG system. These findings open new avenues for oxide electronics. △ Less

Submitted 22 April, 2015; originally announced April 2015.

Comments: 29 pages, 5 figures, Accepted for publication in Nature Materials

Creation of high mobility two-dimensional electron gases via strain induced polarization at an otherwise nonpolar complex oxide interface

Authors: Yunzhong Chen, Felix Trier, Takeshi Kasama, Dennis V. Christensen, Nicolas Bovet, Han Li, Zoltan I. Balogh, Karl T. S. Thydén, Wei Zhang, Sadegh Yazdi, Poul Norby, Nini Pryds, Søren Linderoth

Abstract: The discovery of two-dimensional electron gases (2DEGs) in SrTiO3-based heterostructures provides new opportunities for nanoelectronics. Herein, we create a new type of oxide 2DEG by the epitaxial-strain-induced polarization at an otherwise nonpolar perovskite-type interface of CaZrO3/SrTiO3. Remarkably, this heterointerface is atomically sharp, and exhibits a high electron mobility exceeding 60,0… ▽ More The discovery of two-dimensional electron gases (2DEGs) in SrTiO3-based heterostructures provides new opportunities for nanoelectronics. Herein, we create a new type of oxide 2DEG by the epitaxial-strain-induced polarization at an otherwise nonpolar perovskite-type interface of CaZrO3/SrTiO3. Remarkably, this heterointerface is atomically sharp, and exhibits a high electron mobility exceeding 60,000 cm2V-1s-1 at low temperatures. The 2DEG carrier density exhibits a critical dependence on the film thickness, in good agreement with the polarization induced 2DEG scheme. △ Less

Submitted 23 February, 2015; originally announced February 2015.

Comments: 19 pages, 4 figs; Nano Letters,2015, published online

Analysis of the internal heat losses in a thermoelectric generator

Authors: R. Bjørk, D. V. Christensen, D. Eriksen, N. Pryds

Abstract: A 3D thermoelectric numerical model is used to investigate different internal heat loss mechanisms for a thermoelectric generator with bismuth telluride p- and n-legs. The model considers all thermoelectric effects, temperature dependent material parameters and simultaneous convective, conductive and radiative heat losses, including surface to surface radiation. For radiative heat losses it is sho… ▽ More A 3D thermoelectric numerical model is used to investigate different internal heat loss mechanisms for a thermoelectric generator with bismuth telluride p- and n-legs. The model considers all thermoelectric effects, temperature dependent material parameters and simultaneous convective, conductive and radiative heat losses, including surface to surface radiation. For radiative heat losses it is shown that for the temperatures considered here, surface to ambient radiation is a good approximation of the heat loss. For conductive heat transfer the module efficiency is shown to be comparable to the case of radiative losses. Finally, heat losses due to internal natural convection in the module is shown to be negligible for the millimetre sized modules considered here. The combined case of radiative and conductive heat transfer resulted in the lowest efficiency. The optimized load resistance is found to decrease for increased heat loss. The leg dimensions are varied for all heat losses cases and it is shown that the ideal way to construct a TEG module with minimal heat losses and maximum efficiency is to either use a good insulating material between the legs or evacuate the module completely, and use small and wide legs closely spaced. △ Less

Submitted 19 September, 2014; originally announced September 2014.

Comments: 11 pages, 9 figures

Journal ref: International Journal of Thermal Sciences, Vol. 85, 12-20, 2014

A high-mobility two-dimensional electron gas at the heteroepitaxial spinel/perovskite complex oxide interface of γ-Al2O3/SrTiO3

Authors: Y. Z. Chen, N. Bovet, F. Trier, D. V. Christensen, F. M. Qu, N. H. Andersen, T. Kasama, W. Zhang, R. Giraud, J. Dufouleur, T. S. Jespersen, J. R. Sun, A. Smith, J. Nygård, L. Lu, B. Büchner, B. G. Shen, S. Linderoth, N. Pryds

Abstract: The discovery of two-dimensional electron gases (2DEGs) at the heterointerface between two insulating perovskite-type oxides, such as LaAlO3 and SrTiO3, provides opportunities for a new generation of all-oxide electronic and photonic devices. However, significant improvement of the interfacial electron mobility beyond the current value of approximately 1,000 cm2V-1s-1 (at low temperatures), remain… ▽ More The discovery of two-dimensional electron gases (2DEGs) at the heterointerface between two insulating perovskite-type oxides, such as LaAlO3 and SrTiO3, provides opportunities for a new generation of all-oxide electronic and photonic devices. However, significant improvement of the interfacial electron mobility beyond the current value of approximately 1,000 cm2V-1s-1 (at low temperatures), remains a key challenge for fundamental as well as applied research of complex oxides. Here, we present a new type of 2DEG created at the heterointerface between SrTiO3 and a spinel γ-Al2O3 epitaxial film with excellent quality and compatible oxygen ions sublattices. This spinel/perovskite oxide heterointerface exhibits electron mobilities more than one order of magnitude higher than those of perovskite/perovskite oxide interfaces, and demonstrates unambiguous two-dimensional conduction character as revealed by the observation of quantum magnetoresistance oscillations. Furthermore, we find that the spinel/perovskite 2DEG results from interface-stabilized oxygen vacancies and is confined within a layer of 0.9 nm in proximity to the heterointerface. Our findings pave the way for studies of mesoscopic physics with complex oxides and design of high-mobility all-oxide electronic devices. △ Less

Submitted 1 April, 2013; originally announced April 2013.

Comments: 25pages, 5 figures

Journal ref: Nature Communications, Nat Commun. 2013;4:1371

77Se NMR Investigation of the K(x)Fe(2-y)Se(2) High Tc Superconductor (Tc=33K)

Authors: D. A. Torchetti, M. Fu, D. C. Christensen, K. J. Nelson, T. Imai, H. C. Lei, C. Petrovic

Abstract: We report a comprehensive 77Se NMR study of the structural, magnetic, and superconducting properties of a single crystalline sample of the newly discovered FeSe-based high temperature superconductor K(x)Fe(2-y)Se(2) (Tc=33K) in a broad temperature range up to 290 K. We will compare our results with those reported for FeSe (Tc=9K) and FeAs-based high Tc systems. We report a comprehensive 77Se NMR study of the structural, magnetic, and superconducting properties of a single crystalline sample of the newly discovered FeSe-based high temperature superconductor K(x)Fe(2-y)Se(2) (Tc=33K) in a broad temperature range up to 290 K. We will compare our results with those reported for FeSe (Tc=9K) and FeAs-based high Tc systems. △ Less

Submitted 20 March, 2011; v1 submitted 25 January, 2011; originally announced January 2011.

Comments: Final version

Journal ref: Physical Review B 83 (2011) 104508