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Monolayer Semiconductor Auger Detector
Authors:
Colin M. Chow,
Hongyi Yu,
John R. Schaibley,
Pasqual Rivera,
Joseph Finney,
Jiaqiang Yan,
David G. Mandrus,
Takashi Taniguchi,
Kenji Watanabe,
Wang Yao,
David H. Cobden,
Xiaodong Xu
Abstract:
Auger recombination in semiconductors is a many-body phenomenon in which recombination of electrons and holes is accompanied by excitation of other charge carriers. Being nonradiative, it is detrimental to light emission. The excess energy of the excited carriers is normally rapidly converted to heat, making Auger processes difficult to probe directly. Here, we employ a technique in which the Auge…
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Auger recombination in semiconductors is a many-body phenomenon in which recombination of electrons and holes is accompanied by excitation of other charge carriers. Being nonradiative, it is detrimental to light emission. The excess energy of the excited carriers is normally rapidly converted to heat, making Auger processes difficult to probe directly. Here, we employ a technique in which the Auger-excited carriers are detected by their ability to tunnel out of the semiconductor through a thin barrier, generating a current. We employ vertical van der Waals (vdW) heterostructures with monolayer WSe2 as the semiconductor and the wide band gap hexagonal boron nitride (hBN) as the tunnel barrier to preferentially transmit high-energy Auger-excited carriers to a graphite electrode. The unambiguous signatures of Auger processes are a rise in the photocurrent when excitons are created by resonant excitation, and negative differential photoconductance resulting from the shifts of the exciton resonances with voltage. We detect holes Auger-excited by both neutral and charged excitons, and find that the Auger scattering is surprisingly strong under weak excitation. The selective extraction of Auger carriers at low, controlled carrier densities that is enabled by vdW heterostructures illustrates an important addition to the techniques available for probing relaxation processes in 2D materials.
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Submitted 21 April, 2020;
originally announced April 2020.
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Unusual Exciton-Phonon Interactions at van der Waals Engineered Interfaces
Authors:
Colin M. Chow,
Hongyi Yu,
Aaron M. Jones,
Jiaqiang Yan,
David G. Mandrus,
Takashi Taniguchi,
Kenji Watanabe,
Wang Yao,
Xiaodong Xu
Abstract:
Raman scattering is a ubiquitous phenomenon in light-matter interactions which reveals a material's electronic, structural and thermal properties. Controlling this process would enable new ways of studying and manipulating fundamental material properties. Here, we report a novel Raman scattering process at the interface between different van der Waals (vdW) materials as well as between a monolayer…
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Raman scattering is a ubiquitous phenomenon in light-matter interactions which reveals a material's electronic, structural and thermal properties. Controlling this process would enable new ways of studying and manipulating fundamental material properties. Here, we report a novel Raman scattering process at the interface between different van der Waals (vdW) materials as well as between a monolayer semiconductor and 3D crystalline substrates. We find that interfacing a WSe2 monolayer with materials such as SiO2, sapphire, and hexagonal boron nitride (hBN) enables Raman transitions with phonons which are either traditionally inactive or weak. This Raman scattering can be amplified by nearly two orders of magnitude when a foreign phonon mode is resonantly coupled to the A exciton in WSe2 directly, or via an A'1 optical phonon from WSe2. We further showed that the interfacial Raman scattering is distinct between hBN-encapsulated and hBN-sandwiched WSe2 sample geometries. This cross-platform electron-phonon coupling, as well as the sensitivity of 2D excitons to their phononic environments, will prove important in the understanding and engineering of optoelectronic devices based on vdW heterostructures.
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Submitted 14 January, 2017;
originally announced January 2017.
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Phonon-assisted oscillatory exciton dynamics in monolayer MoSe2
Authors:
Colin M. Chow,
Hongyi Yu,
Aaron M. Jones,
John R. Schaibley,
Michael Koehler,
David G. Mandrus,
R. Merlin,
Wang Yao,
Xiaodong Xu
Abstract:
In monolayer semiconductor transition metal dichalcogenides, the exciton-phonon interaction is expected to strongly affect the photocarrier dynamics. Here, we report on an unusual oscillatory enhancement of the neutral exciton photoluminescence with the excitation laser frequency in monolayer MoSe2. The frequency of oscillation matches that of the M-point longitudinal acoustic phonon, LA(M). Oscil…
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In monolayer semiconductor transition metal dichalcogenides, the exciton-phonon interaction is expected to strongly affect the photocarrier dynamics. Here, we report on an unusual oscillatory enhancement of the neutral exciton photoluminescence with the excitation laser frequency in monolayer MoSe2. The frequency of oscillation matches that of the M-point longitudinal acoustic phonon, LA(M). Oscillatory behavior is also observed in the steady-state emission linewidth and in timeresolved photoluminescence excitation data, which reveals variation with excitation energy in the exciton lifetime. These results clearly expose the key role played by phonons in the exciton formation and relaxation dynamics of two-dimensional van der Waals semiconductors.
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Submitted 26 October, 2017; v1 submitted 10 January, 2017;
originally announced January 2017.
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Non-local nuclear spin quieting in quantum dot molecules: Optically-induced extended two-electron spin coherence time
Authors:
Colin M. Chow,
Aaron M. Ross,
Danny Kim,
Daniel Gammon,
Allan S. Bracker,
L. J. Sham,
Duncan G. Steel
Abstract:
We demonstrate the extension of coherence between all four two-electron spin ground states of an InAs quantum dot molecule (QDM) via non-local suppression of nuclear spin fluctuations in both constituent quantum dots (QDs), while optically addressing only the upper QD transitions. Long coherence times are revealed through dark-state spectroscopy as resulting from nuclear spin locking mediated by t…
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We demonstrate the extension of coherence between all four two-electron spin ground states of an InAs quantum dot molecule (QDM) via non-local suppression of nuclear spin fluctuations in both constituent quantum dots (QDs), while optically addressing only the upper QD transitions. Long coherence times are revealed through dark-state spectroscopy as resulting from nuclear spin locking mediated by the exchange interaction between the QDs. Lineshape analysis provides the first measurement of the quieting of the Overhauser field distribution correlating with reduced nuclear spin fluctuations.
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Submitted 15 December, 2015;
originally announced December 2015.
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Persistent narrowing of nuclear-spin fluctuations in InAs quantum dots using laser excitation
Authors:
Bo Sun,
Colin Ming Earn Chow,
Duncan G. Steel,
Allan S. Bracker,
Daniel Gammon,
L. J. Sham
Abstract:
We demonstrate the suppression of nuclear spin fluctuations in an InAs quantum dot and measure the timescales of the spin narrowing effect. By initializing for tens of milliseconds with two continuous wave diode lasers, fluctuations of the nuclear spins are suppressed via the hole assisted dynamic nuclear polarization feedback mechanism. The fluctuation narrowed state persists in the dark (absent…
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We demonstrate the suppression of nuclear spin fluctuations in an InAs quantum dot and measure the timescales of the spin narrowing effect. By initializing for tens of milliseconds with two continuous wave diode lasers, fluctuations of the nuclear spins are suppressed via the hole assisted dynamic nuclear polarization feedback mechanism. The fluctuation narrowed state persists in the dark (absent light illumination) for well over one second even in the presence of a varying electron charge and spin polarization. Enhancement of the electron spin coherence time (T2*) is directly measured using coherent dark state spectroscopy. By separating the calming of the nuclear spins in time from the spin qubit operations, this method is much simpler than the spin echo coherence recovery or dynamic decoupling schemes.
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Submitted 21 March, 2012;
originally announced March 2012.
